CN106910580B - A kind of insulator surface plasma hydrophobicity is modified integral treatment method - Google Patents

A kind of insulator surface plasma hydrophobicity is modified integral treatment method Download PDF

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CN106910580B
CN106910580B CN201710294910.9A CN201710294910A CN106910580B CN 106910580 B CN106910580 B CN 106910580B CN 201710294910 A CN201710294910 A CN 201710294910A CN 106910580 B CN106910580 B CN 106910580B
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plasma
insulator surface
hydrophobicity
insulator
gas
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CN106910580A (en
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方志
苗传润
张波
王乾
刘峰
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Nanjing Tech University
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Nanjing Tech University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B19/00Apparatus or processes specially adapted for manufacturing insulators or insulating bodies
    • H01B19/04Treating the surfaces, e.g. applying coatings

Abstract

Proposed by the present invention is that a kind of insulator surface plasma hydrophobicity is modified integral treatment method, it is characterized in that including the following steps:(1)The processing of insulator surface plasma cleaning;(2)Insulator surface plasma hydrophobicity modification.Advantages of the present invention:1)Improve insulator surface hydrophobic modified treatment effeciency and treatment effect;2)Quick insulator surface dry cleaning is realized, improves the bond strength of hydrophobic ingredients and insulator surface;3)Insulator surface hydrophobicity performance is improved, the stability and persistence of surface hydrophobicity especially in highfield and light environment;4)Meet the hydrophobic modified process demand of integrated insulator surface;Improve continuity, stability and the uniformity of insulator surface plasma hydrophobicity modified technique;Improve the environment friendly of integrated artistic.

Description

A kind of insulator surface plasma hydrophobicity is modified integral treatment method
Technical field
The present invention relates to a kind of insulator surface plasma hydrophobicities to be modified integral treatment method, belongs to electric power Insulator process field in system.
Background technology
The resistance to pollution flashover of insulator surface and moisture-proof dodge the overall operation performance of capacity electric system, are promoted in electric system Insulator can improve the stability that associate power equipment is run in electric system along the wet lightning pressure in face and along face pollution flashover voltage And safety;The resistance to pollution flashover of insulator surface is promoted at present and the method for wet lightning pressure includes:Regularly schedule inspection and cleaning, increase The volume or surface area of insulator are novel to improve the effective distance of surface insulation, the hydrophobicity for improving insulator surface and exploitation Isolator material.
The method for improving insulator surface hydrophobicity in electric system at present is mainly prevented using greenhouse vulcanization type silicon rubber Pollution flashover coating(Referred to as RTV anti-pollution flashover coatings), if disclosed a kind of anti-pollution flashover coating in patent CN 104277529A, utilize The antistatic adsorptivity and hydrophobicity of fluoride materials and the hydrophobicity of organosilicon material can reduce insulating materials surface pair Droplet, dust and the adsorption effect with particle;But the weatherability of RTV anti-pollution flashover coatings is poor, be chronically exposed to highfield, Aging easily occurs in the environment of the factors such as illumination, high humility, surface hydrophobicity declines therewith.For another example patent CN A kind of method for improving insulator surface hydrophobicity is disclosed in 103500621A, first sprays a strata tetrafluoro in insulator surface Insulator is then placed in 200 degrees Celsius of hot environment high temperature and cured 5 minutes, finally in insulator surface by vinyl material The polytetrafluoroethylene film that a layer thickness is not less than 0.1 millimeter is formed, it can relatively low polytetrafluoroethylene (PTFE) on surface using moisture and filth The poor characteristic of film surface adhesive force improves the hydrophobicity of insulator surface and resistance to pollution flashover and the ability of wet sudden strain of a muscle;But poly- four Fluoride surface water droplet angle is about 110 °, and the water contact angle of 120 ° compared to RTV coating of the hydrophobic effect on surface has certain Gap;Insulator is different with the coefficient of expansion of surface polytetrafluoroethylene material simultaneously, in the running environment of highfield and high temperature, Easily cracking comes off the polytetrafluoroethylene film of formation so that insulator surface hydrophobicity performance declines;Therefore, how efficiently, ring It protects, improve to long duration and keep isolator material surface hydrophobic performance, have extensively in electric system technical field of high voltage General practical application request.
Invention content
Proposed by the present invention is that a kind of insulator surface plasma hydrophobicity is modified integral treatment method, purpose purport It is improving and is keeping isolator material surface hydrophobic performance, meeting the application demand in electric system technical field of high voltage.
The technical solution of the present invention:A kind of insulator surface plasma hydrophobicity is modified integral treatment method, This method includes the following steps:
(1)The processing of insulator surface plasma cleaning;
(2)Insulator surface plasma hydrophobicity modification.
Advantages of the present invention:
1)Using low temperature plasma material surface hydrophobicity modification technology, the hydrophobic modified place of insulator surface is improved Manage efficiency and treatment effect;
2)It employs and generates high activity, the low temperature plasma of large area cleans and the method on activated material surface, realization Quick insulator surface dry cleaning, can improve the hydrophobic modified treatment effeciency of insulator plasma, be conducive to improve The bond strength of hydrophobic ingredients and insulator surface;
3)Hydrophobicity modification is directly carried out to insulator surface using the low temperature plasma containing hydrophobic ingredients, it can be exhausted Edge sublist face introduces the hydrophobicity active group of fluorine-containing, silicon and chlorine, insulator surface hydrophobicity performance is improved, especially in forceful electric power The stability and persistence of surface hydrophobicity in field and light environment;
4)Using what the cleaning of insulator plasma surface and the processing of insulator plasma surface hydrophobicity were combined Mode can realize two kinds of functions of material surface cleaning and material surface modifying, using identical plasma using plasma Body generating means only changes the operating condition of plasma, can generate the plasma of different characteristics(It is mentioned in this method First plasma and the second plasma), meet the hydrophobic modified process demand of integrated insulator surface;It is integrated exhausted Edge surface cleaning and modified technique can reduce the degree of participation that insulator is modified pilot process operating personnel, improve insulator Continuity, stability and the uniformity of surface plasma hydrophobicity modified technique have ensured that insulator surface plasma is hated Watersoluble modified qualification rate;Enclosed processing method can reduce pollution of the insulator processing procedure to environment from source, Improve the environment friendly of integrated artistic.
Description of the drawings
Attached drawing 1 is the fundamental diagram that a kind of insulator surface plasma hydrophobicity is modified integral treatment method.
Attached drawing 2 be used by the hydrophobic modified integral treatment method of insulator surface plasma insulator surface etc. from The hydrophobic modified processing device structure diagram of daughter.
Attached drawing 3 is the work flow diagram that a kind of insulator surface plasma hydrophobicity is modified integral treatment method.
Attached drawing 4 is the contrast images for being modified the contact of front and rear surfaces water in embodiment 1 to PMMA formula insulator surfaces hydrophobicity.
Attached drawing 5 is that PMMA formulas insulator handles front surface FTIR analysis charts in embodiment 1.
Attached drawing 6 is PMMA formulas insulation subprocessing rear surface FTIR analysis charts in embodiment 1.
Attached drawing 7 is the scan image of before processing PMMA formulas insulator surface electronic scanner microscope in embodiment 1.
Attached drawing 8 is the scan image of PMMA formula insulator surface electronic scanner microscopes after being handled in embodiment 1.
Attached drawing 9 is the comparison for being modified the contact of front and rear surfaces water in embodiment 2 to epoxy resin formula insulator surface hydrophobicity Image.
Attached drawing 10 is 2 epoxy resin formula insulator of embodiment processing front surface FTIR analysis charts.
Attached drawing 11 is 2 epoxy resin formula of embodiment insulation subprocessing rear surface FTIR analysis charts.
Attached drawing 12 is the scan image of before processing epoxy resin formula insulator surface electronic scanner microscope in embodiment 2.
Attached drawing 13 is the scan image of epoxy resin formula insulator surface electronic scanner microscope after being handled in embodiment 2.
It is time air flue regulating valve, 1-3 be gas mixing chamber, 1-4 is gas-liquid two that 1-1, which is main airway regulating valve, 1-2, in attached drawing Mix chamber, 1-5 is level-one flow divider, 1-6 be two level shunting valve, 1-7 be two level flow divider, 1-8 is that plasma is anti- It is mechanical chuck, 1-11 is high voltage power supply that answer device, 1-9, which be insulator, 1-10,.
Specific embodiment
A kind of insulator surface plasma hydrophobicity is modified integral treatment method, and this method includes the following steps:
(1)The processing of insulator surface plasma cleaning;
(2)Insulator surface plasma hydrophobicity modification.
The insulator surface plasma hydrophobicity is modified integral treatment method and employs insulator surface plasma Body hydrophobicity modification device, the insulator surface plasma hydrophobicity modification device include main airway regulating valve 1- 1st, secondary air flue regulating valve 1-2, gas mixing chamber 1-3, gas-liquid two-phase mixing chamber 1-4, level-one flow divider 1-5, two level shunt regulating Valve 1-6, two level flow divider 1-7, plasma reactor 1-8, mechanical chuck 1-10, high voltage power supply 1-11;Wherein, main airway tune Section valve 1-1 is located on main airway, and secondary air flue regulating valve 1-2 is located on time air flue, and gas-liquid two-phase mixing chamber is serially connected on secondary air flue 1-4, main airway connect with time air flue with gas mixing chamber 1-3 respectively, gas mixing chamber 1-3 pass sequentially through level-one flow divider 1-5, Connect after two level shunting valve 1-6, two level flow divider 1-7 with plasma reactor 1-8, outside plasma reactor 1-8 Meet high voltage power supply 1-11, the jet port on plasma reactor 1-8 is corresponding with mechanical chuck 1-10 to be placed.
The step(1)The processing of insulator surface plasma cleaning, the process include the following steps:
1)Insulator is fixed in mechanical chuck;
2)Adjust mechanical chuck rotating speed;
3)Open main airway regulating valve;
4)Open two level shunting valve;
5)Apply high pressure and generate the first plasma;
6)Stalling mechanical chuck removes high pressure;
7)Check insulator surface clean-up performance.
The insulator is fixed in maximum gauge in the mechanical chuck of 400mm.
The step(1)It is middle adjusting mechanical chuck rotating speed make insulator in insulator surface plasma cleaning procedures with Mechanical chuck is with 1 ° to 10 ° per second of angular speed uniform rotation.
The step(1)The middle type for applying high pressure includes applying high-frequency and high-voltage or high voltage pulse, wherein high-frequency and high-voltage Frequency is between 20000 hertz to 30000 hertz, and voltage magnitude is between 8000 volts to 12000 volts;The weight of high voltage pulse Complex frequency is between 300 hertz to 2000 hertz, and voltage magnitude is between 15000 volts to 20000 volts.
After the opening main airway regulating valve and opening two level shunting valve, inertia is passed through in plasma reactor Any one of gas, specially helium, neon, argon gas, xenon or two kinds of mixed gas or two or more mixed gas; High pressure is applied to the inert gas being passed through in plasma reactor and generates the first plasma;Applying electrion mistake Excitation state and metastable helium of the excitation state, metastable atom to play a major role in journey including the generation of these inert gases are former Son, ar atmo, neon atom, xenon atom;There is oxygen atom, hydroxyl of strong oxidizing property and dirt-removing power etc. in first plasma Active particle is by oxygen in high energy electron and excitation state, metastable atom and surrounding air and the production of water vapour molecule ionization by collision Raw.
Due in the first plasma there are a large amount of electronics, cation, free radical, metastable molecule and atom, when When plasma plume acts on cleaned material surface, physical etchings, chemical modification and surface-crosslinked physico can be generated Process, so as to decompose or clear the pollution off;The final clean-up performance of insulator surface depends on generated first plasma The activity and absolute quantity of various active particles in body;The first plasma generated belongs to low temperature plasma, will not damage Insulator base material.
High energy electron and excitation state and metastable atomic collision insulating materials surface in first plasma, exhausted Edge material surface carries out physical etchings, and the organic matter that bulk links is disassembled as small block-like organic matter fragment;First plasma Highly reactive form of oxygen atom and hydroxyl in body can be acted on the organic pollutant of insulator surface, by the organic of remained on surface Object is decomposed into carbon dioxide and hydrone, realizes the disengaging that organic pollution shows from insulating materials;First plasma simultaneously In active particle also hit insulator surface, physical etchings and chemical modification occurs, increases the degree of roughness of insulator surface, Insulator surface energy is improved, the insulator surface hydrophobicity for next step is modified and provides high-cleanness, high, high surface energy changes Property substrate surface.
First corona treatment insulator surface 2 minutes stalls mechanical chuck, removes high pressure and check to after five minutes Insulator surface clean-up performance if insulating materials surface still remains impurity particle, repeats insulator surface plasma cleaning Step 1 in processing)To 7), until residual of the surface without impurity such as dust, dirt and greases, can enter step(2)Insulator Surface hydrophobicity modification.
Insulator surface plasma cleaning procedures main function is to utilize the first plasma without hydrophobic substance The impurity such as dust, dirt and the grease of insulator surface are removed, improve the cleannes on surface, while the height in the first plasma Energy electronics and active heavy particle hit material surface and cause material surface that physical etchings occur, and increase the coarse of insulator surface Degree improves the surface energy of insulator, and material surface after activation is easier to introduce hydrophobicity active group, carries out surface hydrophobic Property be modified.
Step (2) the insulator surface plasma hydrophobicity modification, the process include the following steps:
1)Hydrophobic substance is added into gas-liquid two-phase mixer;
2)Open time air flue regulating valve;
3)Adjust mechanical chuck rotating speed;
4)Apply high pressure and generate the second plasma;
5)The hydrophobic modified processing of insulator surface.
The hydrophobic substance added in hydrophobic substance S201 is added in the mixer to gas-liquid two-phase and includes four chlorinations One or more of silicon, hexamethyldisiloxane, tetramethyl alkane, trichlorosilane;These hydrophobic substances can change second etc. The action activity of gas ions.
It is described to open time air flue regulating valve, the inert gas identical with main airway is passed through in secondary air flue, in secondary air flue Inert gas, which flows through, enters gas mixing chamber after gas-liquid two-phase mixer, inert gas in gas mixing intracavitary time air flue and Inert gas in main airway is mixed to form working gas, and adjusting inert gas in valve regulation time air flue by secondary air flue passes through gas The amount of hydrophobic substance is taken away during liquid two-phase mixtures device, and then controls the proportional amount of hydrophobic substance in final working gas, The volume content of hydrophobic substance is controlled between 0.01% to 0.2% in working gas.
The rate for adjusting mechanical chuck rotational speed regulation Surface Modification of Insulating Material, it is mechanical in hydrophobicity modifying process The rotating speed of chuck is between 1 ° to 4 ° of each second.
The application high pressure generates the second plasma, to be applied in plasma reactor to the working gas being passed through It adds high pressure and generates the second plasma, in addition to containing electronics, cation, free radical, metastable state in the second plasma of generation Molecule and atom outside, also touched containing electronics, cation, free radical, metastable molecule and atom and hydrophobic substance molecule Hit the free group of the fluorine-containing of ionization generation, silicon and chlorine;Control and adjusting are used to generate the working gas stream of the second plasma Speed, hydrophobic substance content, operating voltage and with the action time of isolator material and operating distance, can reach adjusting insulation The purpose of sub- hydrophobic treatment effect, and then optimize the hydrophobic modified effect of insulator plasma;Close to the height of insulator surface Can electronics, cation, free radical, metastable molecule and atomic collision isolator material surface, open isolator material table Si-O, Al-O and Ca-O key in face, and the active group of fluorine-containing, silicon and chlorine is introduced on the surface of isolator material, reach raising The purpose of isolator material surface hydrophobicity.
Second plasma by the jet port on plasma reactor 1-8 formed the grade of pattern a kind of from Daughter source;The jet port for single tube jet stream jet port or by several single tube jet stream injection port groups into it is one-dimensional or two-dimentional or three Tie up Jet stream array plumage jet port;The single tube jet stream is needle ring structure or ring ring structure or ring-plane structure;This plasma Source can effectively clean the surface of insulator with complex shape, improve the tidiness and surface energy on insulating materials surface.
Insulator surface plasma hydrophobicity modifying process main function is that hydrophobic substance is added into working gas, By adjusting applied voltage type and intensity, the ingredient of hydrophobic substance and content, the flow velocity of working gas and ratio and Processing distance between two plasmas and insulating materials is equably modified insulating materials surface.
The application high pressure is generated in the second plasma and the hydrophobic modified processing procedure of insulator surface, applies high pressure class Type includes high-frequency and high-voltage and high voltage pulse, and wherein the frequency of high-frequency and high-voltage is between 20000 hertz to 30000 hertz, voltage amplitude Value is between 8000 volts to 12000 volts, and the repetition rate of high voltage pulse is between 300 hertz to 2000 hertz, Voltage Peak Value is between 15000 volts to 20000 volts;Second corona treatment carries out material surface hydrophobicity and is modified 4 minutes to 10 Stop after minute.
It is the key that insulator surface is hydrophobic modified to apply high pressure to generate the second plasma;Second plasma Working gas be added on the basis of the working gas of the first plasma it is a small amount of it is siliceous, containing chlorine and fluorine-containing substance;The In two plasmas in addition to comprising high energy electron, excitation state and the metastable active atomic contained in the first plasma and point Son, further include it is siliceous, containing chlorine and fluorine-containing active group;High energy electron, excitation state in second plasma and metastable Atom and bioactive molecule first hit the surface of insulating materials, open Ca-O, Al-O and Si-O key on insulating materials surface, and second etc. The chemical bonds siliceous, containing chlorine and fluorine-containing active group and fracture carried in gas ions, into insulating materials surface point In sublayer, achieve the purpose that Surface Modification of Insulating Material;Control and the adjusting type of applied voltage and amplitude, primary and secondary air flue tune The processing time that the flow velocity of inert gas, the content of addition hydrophobic substance and the insulator hydrophobicity flowed through in section valve is modified With processing spacing, thus it is possible to vary the effect that insulator surface hydrophobicity is modified.
The key of entire processing method is that applying high pressure generates the first plasma, applies high pressure the second plasma of generation Body and the first plasma of realization and the integrated plasma-generating technologies of the second plasma.
Realize that the key problem in technology for generating the second plasma integrated treatment of the first plasma and generation is different spies Generation, control and the adjusting of the low temperature plasma of property;In the method for the present invention, change the kind of the working gas in plasma The component of class and mixed gas adjusts the gas flow rate of different plasma unit in plasma producing apparatus and applies electricity outside Pressure amplitude value generates the plasma of different activities characteristic;In the method, change the characteristic of applied voltage and the spy of working gas Property can generate respectively for clean first plasma of insulator surface and for insulator surface it is hydrophobic modified second Plasma, whole process do not need to additionally increase chemically or physically means, realize that insulator surface plasma is hydrophobic modified Integrated treatment.
The device and method that this method is related to are suitble between the diameter of the insulator of processing in 140 millimeters to 200 millimeters, height Between between 100 millimeters to 500 millimeters, porcelain class insulator, toughened glass insulator and composite class insulator can be handled.
With reference to embodiment, the present invention will be further described.
Embodiment 1
Processed PMMA in the present embodiment(Polymethyl methacrylate)150 millimeters of formula insulator diameter, 300 milli of height Rice.
1)PMMA formula insulators are fixed on maximum gauge in the mechanical chuck of 400mm, and with mechanical chuck with per second 1 ° to 10 ° of angular speed uniform rotation, in installation process, need to ensure the axis of columnar insulator in vertical direction with water Flat drift angle is no more than 4 °;
2)Argon gas is passed through into plasma reactor by main airway, gas flow control 5 liters/min to 10 liters/ In minute section;
3)Outer high frequency voltage amplitude of applying is 8kV ~ 12kV on the high-field electrode and grounding electrode of plasma reactor, electricity Source frequency is 22kHz ~ 30kHz, and the distance of the jet port of the plasma jet array plumage of generation apart from insulator process face is 5mm to 8mm, processing time are 4 minutes;After treatment closes main airway regulating valve 1-1;
4)Inert argon gas ionizes in the electric field produces electronics, metastable state Ar atoms, these electronics, metastable state Ar atoms Oxygen atom, nitrogen molecule, the hydroxyl particle of excitation state generated with oxygen in surrounding air and vapor ionization by collision;It generates Electronics and metastable Ar atomic collisions material surface spot, it is made to be cracked into the spot fragment of fritter;Collide electricity simultaneously Oxygen atom and hydroxyl particle from generation decompose the organic matter in spot, and the oxidation operation in spot is made to resolve into dioxy Change carbon and water vapour molecule;
5)After the completion of insulator surface cleaning process, be again turned on main airway regulating valve 1-1, gas flow control 7 liters/ In minute to 12 liters/min of sections, time air flue regulating valve 1-2 is opened, separately by one 200 ml/min to 400 ml/mins Small flow argon gas, the gas-liquid two-phase mixing chamber 1-4 for filling hexamethyldisiloxane by one using secondary air flue is mixed with containing pregnancy The small flow argon gas of two silicon ether of base as working gas is passed through reacting for plasma after being sufficiently mixed with the gas in main airway In chamber;The content of taken out of hexamethyldisiloxane is related with small-flow gas flow velocity, by adjusting time air flue medium-small flow argon gas Flow velocity adjust the content of hexamethyldisiloxane, the gas flow rate of small flow argon gas is higher, the pregnancy being mixed into working gas Two silicon ether content of base is higher;
6)Mechanical chuck is adjusted with 6 ° per second of angular speed uniform rotation;
7)Outer application frequency is 22kHz on the high-field electrode and grounding electrode of plasma reactor 1-8, amplitude is The high-frequency and high-voltage of 8kV generates the jet opening distance processing material bottom 5mm of plasma plume, and plasma treated material surface is hated Watersoluble modified 4 minutes to stopping after ten minutes.
In addition to including high energy electron, excitation state and the metastable argon contained in the first plasma in second plasma Atom further includes siliceous and methylic active group;High energy electron, excitation state and metastable original in second plasma Son and bioactive molecule first hit the surface of insulating materials, open C-C and C=C key on insulating materials surface, in the second plasma The siliceous and methylic active group carried and the chemical bonds of fracture, into insulating materials superficial molecular, reach The purpose of Surface Modification of Insulating Material.
Fig. 4 is the image that PMMA formula insulator surfaces hydrophobicity is modified the contact of front and rear surfaces water, wherein (a) is untreated When surface water contact image, water contact angle is 80 ° at this time;(b) it is to carry out insulator surface using the first plasma generated Rear surface water contact image is cleaned, after the cleaning of the first plasma surface, surface water contact angle drops to 70 °, and surface is clear at this time Cleanliness is promoted, and surface can improve;(c) it is to carry out the hydrophobic modified rear surface water hookup of insulator surface using the second plasma Picture, at this time water contact angle reach 120 °, it is untreated before 80 °, water contact angle, which has, to be obviously improved, insulator surface hydrophobicity It can be promoted.
Fig. 5-6 is PMMA formulas insulator surface FTIR analysis charts before and after the processing, it can be found that before processing PMMA tables from figure C h bond ,-C=O keys, C-O-C keys etc. are contained in face, and introduce Si-O-Si keys, Si- carrying out surface hydrophobicity modification rear surface CH3And Si -- H bond, show after the processing of insulator surface hydrophobicity, material surface is introduced containing Si and containing-CH3Group, surface Hydrophobicity performance improves.
Fig. 7-8 is the scan image of PMMA formulas insulator surface electronic scanner microscope before and after the processing, before processing PMMA tables Face is amplified in 5000 times of image, microcosmic coplanar flat, and without apparent concave-convex pattern, this is PMMA before processings in hydrophilic Main cause;And find PMMA in the PMMA surface hydrophobicity electronic scanner microscope surface sweeping figure that treated amplifies 5000 times Surface forms the crystalline solid of flakes, and the crystal structure of these flakes is made of coralloid concaveconvex structure, and These coralloid concaveconvex structures are formed by the particle packing of micro/nano level.
Embodiment 2
In the present embodiment between processed 100 millimeters of epoxy resin formula insulator diameter, 200 millimeters of height.
1)Epoxy resin formula insulator is fixed on maximum gauge in the mechanical chuck of 400mm, and with mechanical chuck with 3 ° to 8 ° per second of angular speed uniform rotation;In installation process, need to ensure the axis of columnar insulator in vertical direction It is no more than 2 ° with horizontal sextant angle;
2)Argon gas is passed through into plasma reactor by main airway regulating valve 1-1, gas flow is controlled at 7 liters/min In clock to 12 liters/min of sections;
3)Applied outside the high-field electrode of plasma reactor and the both ends of grounding electrode high frequency voltage amplitude for 10kV ~ 12kV, supply frequency are 25kHz ~ 30kHz;The jet port of the plasma jet array plumage of generation is apart from insulator process face Distance is 2mm to 5mm, and processing time is 4 to 5 minutes;After treatment closes main airway regulating valve 1-1;
4)Inert argon gas ionize in the electric field produce electronics, metastable state Ar atoms and with oxygen in surrounding air and water Oxygen atom, the nitrogen molecule of excitation state and the hydroxyl particle that steam hits ionization generates;The electronics of generation and metastable Ar The spot of atomic collision material surface makes it be cracked into the spot fragment of fritter;The oxygen atom and hydrogen that ionization by collision generates simultaneously Oxygen root particle decomposes the organic matter in spot, and makes its oxygenolysis into carbon dioxide and water vapour molecule;
5)After the completion of insulator surface cleaning process, be again turned on main airway regulating valve 1-1, gas flow control 7 liters/ In minute to 12 liters/min of sections, time air flue regulating valve 1-2 is opened, separately by one 200 ml/min to 400 ml/mins Small flow argon gas, the gas-liquid two-phase mixing chamber 1-4 for filling carbon tetrafluoride by one using secondary air flue is mixed with carbon tetrafluoride point The small flow argon gas of son is passed through as working gas in the reaction chamber of plasma after being sufficiently mixed with main airway air-flow;It is taken out of The content of carbon tetrafluoride is related with small-flow gas flow velocity, is contained by the flow velocity for adjusting small flow argon gas to adjust carbon tetrafluoride Amount, the gas flow rate of small flow argon gas is higher, and the carbon tetrafluoride content being mixed into working gas is higher.6)Adjust mechanical chuck with 6 ° per second of angular speed uniform rotation;
7) apply frequency outside the high-field electrode of plasma reactor 1-8 and the both ends of grounding electrode as 22kHz, width It is worth the high-frequency and high-voltage for 13kV, generates the jet opening distance processing material bottom 5mm of plasma plume, plasma treated material table Face hydrophobicity is modified 4 minutes to stopping after ten minutes.
In addition to including high energy electron, excitation state and the metastable argon contained in the first plasma in second plasma Atom further includes active group siliceous and containing chlorine;High energy electron, excitation state and metastable atom in second plasma The surface of insulating materials is first hit with bioactive molecule, C-C and C=C key on insulating materials surface is opened, is taken in the second plasma The siliceous and methylic active group of band and the chemical bonds of fracture, into insulating materials superficial molecular, reach exhausted The purpose of edge material surface modifying.
Fig. 9 is the image that epoxy resin formula insulator surface hydrophobicity is modified the contact of front and rear surfaces water, wherein figure (a) is not Water contact image in surface during processing, water contact angle is 85 ° at this time;Scheming (b) is insulated using the first plasma of generation Sub- surface cleaning rear surface water contact image, after the cleaning of the first plasma surface, surface water contact angle drops to 75 °, at this time Surface cleanness is promoted, and surface can improve;Figure (c) is to carry out the hydrophobic modified rear surface of insulator surface using the second plasma Water contact image, at this time water contact angle reach 125 °, compare it is untreated before 80 °, water contact angle, which has, to be obviously improved, insulation Sublist face hydrophobicity performance is promoted.
Figure 10-11 is epoxy resin formula insulator surface FTIR analysis charts before and after the processing, it can be found that before processing from figure Epoxy resin surface contains c h bond ,-C=O keys, C-O-C keys etc., and introduces Si- carrying out surface hydrophobicity modification rear surface O-Si keys, Si-Cl and Si -- H bond show that after the processing of insulator surface hydrophobicity material surface is introduced containing Si and containing Cl's Group, surface hydrophobic performance improve.
Figure 12-13 is the scan image of epoxy resin formula insulator surface electronic scanner microscope before and after the processing, from amplification It can be found that smooth sheet is presented in untreated epoxy resin surface in 5000 times of before processing epoxy resin surface image Structure, this is that hydrophilic main cause is presented in epoxy resin.And the epoxy resin electronics after 5000 times of processing processing is amplified Find that epoxy resin surface forms fine and close reticular structure in flying-spot microscope surface sweeping figure, these fine and close reticular structures be by The tubular structure of the particle composition of micro/nano level accumulates what is formed.

Claims (11)

1. insulator surface plasma hydrophobicity be modified integral treatment method, it is characterized in that employ insulator surface etc. from Daughter hydrophobicity modification device, the insulator surface plasma hydrophobicity modification device are adjusted including main airway Valve, secondary air flue regulating valve, gas mixing chamber, gas-liquid two-phase mixing chamber, level-one flow divider, two level shunting valve, two level shunts Valve, plasma reactor, mechanical chuck, high voltage power supply;Wherein, main airway regulating valve is located on main airway, and secondary air flue is adjusted Valve is located on time air flue, is serially connected with gas-liquid two-phase mixing chamber on secondary air flue, main airway and secondary air flue respectively with gas mixing chamber phase Connect, gas mixing chamber pass sequentially through after level-one flow divider, two level shunting valve, two level flow divider with plasma reactor phase It connects, plasma reactor external high voltage power supply, the jet port on plasma reactor is corresponding with mechanical chuck to be placed;It is described Insulator surface plasma hydrophobicity is modified integral treatment method and includes the following steps:
(1)The processing of insulator surface plasma cleaning;
(2)Insulator surface plasma hydrophobicity modification;
2. insulator surface plasma hydrophobicity according to claim 1 is modified integral treatment method, it is characterized in that The step(1)The processing of insulator surface plasma cleaning, includes the following steps:
1)Insulator is fixed in mechanical chuck;
2)Adjust mechanical chuck rotating speed;
3)Open main airway regulating valve;
4)Open two level shunting valve;
5)Apply high pressure and generate the first plasma;
6)Stalling mechanical chuck removes high pressure;
7)Check insulator surface clean-up performance.
3. insulator surface plasma hydrophobicity according to claim 2 is modified integral treatment method, it is characterized in that It is described adjusting mechanical chuck rotating speed make insulator in insulator surface plasma cleaning procedures with mechanical chuck with 1 ° per second To 10 ° of angular speed uniform rotation.
4. insulator surface plasma hydrophobicity according to claim 2 is modified integral treatment method, it is characterized in that After the opening main airway regulating valve and opening two level shunting valve, inert gas is passed through in plasma reactor; High pressure is applied to the inert gas being passed through in plasma reactor and generates the first plasma;Contain in first plasma There are the oxygen atom of strong oxidizing property and dirt-removing power and hydroxyl active particle.
5. insulator surface plasma hydrophobicity according to claim 1 is modified integral treatment method, it is characterized in that The step(2)Insulator surface plasma hydrophobicity modification, includes the following steps:
1)Hydrophobic substance is added into gas-liquid two-phase mixer;
2)Open time air flue regulating valve;
3)Adjust mechanical chuck rotating speed;
4)Apply high pressure and generate the second plasma;
5)The hydrophobic modified processing of insulator surface.
6. insulator surface plasma hydrophobicity according to claim 5 is modified integral treatment method, it is characterized in that The hydrophobic substance added in hydrophobic substance is added in the mixer to gas-liquid two-phase and includes silicon tetrachloride, two silicon of hexamethyl One or more of ether, tetramethyl alkane, trichlorosilane.
7. insulator surface plasma hydrophobicity according to claim 5 is modified integral treatment method, it is characterized in that It is described to open time air flue regulating valve, it is passed through the inert gas identical with main airway in secondary air flue, the inert gas in secondary air flue Enter gas mixing chamber after flowing through gas-liquid two-phase mixer, in the inert gas and main airway in gas mixing intracavitary time air flue Inert gas be mixed to form working gas, adjust inert gas in valve regulation time air flue by secondary air flue mixes by gas-liquid two-phase The amount of hydrophobic substance is taken away during clutch, and then controls the proportional amount of hydrophobic substance in final working gas, working gas The volume content of middle hydrophobic substance is controlled between 0.01% to 0.2%.
8. insulator surface plasma hydrophobicity according to claim 5 is modified integral treatment method, it is characterized in that The rate for adjusting mechanical chuck rotational speed regulation Surface Modification of Insulating Material, mechanical chuck turns in hydrophobicity modifying process Speed is between 1 ° to 4 ° of each second.
9. insulator surface plasma hydrophobicity according to claim 5 is modified integral treatment method, it is characterized in that The application high pressure generates the second plasma, to apply high pressure production to the working gas being passed through in plasma reactor Raw second plasma, in the second plasma of generation in addition to contain electronics, cation, free radical, metastable molecule and Outside atom, also produced containing electronics, cation, free radical, metastable molecule and atom and the ionization of hydrophobic substance molecular collision The free group of raw fluorine-containing, silicon and chlorine;Control and adjusting are used to generate working gas flow velocity, the hydrophobicity of the second plasma The content of substance, operating voltage and with the action time of isolator material and operating distance, reach and adjust the processing of insulator hydrophobic The purpose of effect, and then optimize the hydrophobic modified effect of insulator plasma;High energy electron close to insulator surface, just from Son, free radical, metastable molecule and atomic collision isolator material surface, open Si-O, the Al- on isolator material surface O and Ca-O keys, and the active group of fluorine-containing, silicon and chlorine is introduced on the surface of isolator material, reach and improve isolator material table The purpose of face hydrophobicity.
10. insulator surface plasma hydrophobicity according to claim 5 is modified integral treatment method, it is characterized in that Second plasma passes through plasma reactor(1-8)On jet port form a kind of plasma of pattern Source;The jet port for single tube jet stream jet port or by several single tube jet stream injection port groups into one-dimensional two-dimentional or three-dimensional penetrate Flow array plumage jet port;The single tube jet stream is needle ring structure or ring ring structure or ring-plane structure.
11. the insulator surface plasma hydrophobicity according to claim 2 or 5 is modified integral treatment method, special Sign is that the type for applying high pressure includes applying high-frequency and high-voltage or high voltage pulse, and wherein the frequency of high-frequency and high-voltage is at 20000 hertz Hereby between 30000 hertz, voltage magnitude is between 8000 volts to 12000 volts;The repetition rate of high voltage pulse is at 300 hertz Hereby between 2000 hertz, voltage magnitude is between 15000 volts to 20000 volts.
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