CN106906447A - Magnetron sputtering plating source and its apparatus and method - Google Patents
Magnetron sputtering plating source and its apparatus and method Download PDFInfo
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- CN106906447A CN106906447A CN201611232745.6A CN201611232745A CN106906447A CN 106906447 A CN106906447 A CN 106906447A CN 201611232745 A CN201611232745 A CN 201611232745A CN 106906447 A CN106906447 A CN 106906447A
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- membrane module
- plating
- plating membrane
- magnetic force
- force generating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
The present invention relates to material deposition technique field, and in particular to magnetron sputtering plating source and its apparatus and method.Magnetron sputtering plating source includes a pair rotatable plating membrane modules.Each plating membrane module includes that sputtering target stand and sputtering target stand inside set magnetic force generating elements.Magnetic force generating elements in each plating membrane module is identical towards the polarity of plating membrane module central axis, and magnetic force generating elements each plates the opposite polarity of membrane module central axis towards it in difference plating membrane module.In coating process, membrane module rotation is plated, and magnetic force generating elements position keeps constant.Magnetic control sputtering film plating device uses magnetic control film coating sputtering source, the electronics of overheat or other anions for carrying energy can be strapped between two plating membrane modules by magnetic field, so as to greatly reduce the chance of bombardment workpiece, and can effectively suppress technological temperature rising, realize low temperature plated film.The invention further relates to magnetron sputtering coating method, it uses above-mentioned magnetic control sputtering film plating device.
Description
【Technical field】
The present invention relates to material deposition technique field, more particularly to magnetron sputtering plating source and its apparatus and method.
【Background technology】
Magnetic control sputtering device has been widely used in the plated film fields such as various electronics, decoration as a kind of coating apparatus, its
Have the advantages that plated film speed is fast, pollution-free.
The magnetron sputtering plating source for being used in the manufacturing industry such as semiconductor, panel display screen, sensor at present mainly has flat
Face type and column are rotary-type.In common coating process, ion plasma can produce hot electron or other anions, plane
Can often make hot electron or other negative ion bombardments to the surface of workpiece to be plated with the rotary-type magnetron sputtering plating source of column so that
Workpiece is too high with the technological temperature for plating film.
In actual applications, there is the workpiece material (such as macromolecule) compared with multiple types, or prepared in preceding working procedure
Device can not bear too high technological temperature.Therefore, above-mentioned conventional magnetic control sputtering film plating device can usually limit device and set
The selection of technique when meter or manufacture.
【The content of the invention】
It is the problem for overcoming the technological temperature of existing film too high, the present invention provides a kind of magnetron sputtering plating source and its dress
Put and method.
The technical scheme that the present invention solves technical problem is to provide a kind of magnetron sputtering plating source for for workpiece plated film, its
Including a pair rotatable plating membrane modules, each plating membrane module includes that sputtering target stand and sputtering target stand inside set magnetic force and produces
Part, the magnetic force generating elements in each plating membrane module is identical towards the polarity of plating membrane module central axis, in difference plating membrane module
Magnetic force generating elements each plates the opposite polarity of membrane module central axis towards it；In coating process, plating membrane module rotation, and magnetic force
Generating elements position keeps constant.
Preferably, the magnetic force generating elements in each plating membrane module is multiple, and forms closed hoop body or each plating
Magnetic force generating elements in membrane module is a ring bodies magnetic force generating elements.
Preferably, magnetic line of force closed component is set in each plating membrane module.
Preferably, each plating membrane module is cylindricality, and the magnetic force generating elements in each plating membrane module is along correspondence plated film
Component is radially arranged.
Preferably, it is described sputtering target stand include outer wall, the outer wall be used for fix sputtering target material in its away from inwall table
On face.
Another technical scheme that the present invention solves technical problem is to provide magnetic control sputtering film plating device, and it includes at least one pair of
It is rotatable plating membrane module and the objective table separated by a distance with the plating membrane module, each plating membrane module include sputtering target stand and
The magnetic force generating elements that sputtering target stand inside is set, the magnetic force generating elements direction plating membrane module central axis in each plating membrane module
Polarity it is identical, magnetic force generating elements each plates the opposite polarity of membrane module central axis towards it in difference plating membrane modules；Plated film
During, membrane module rotation is plated, and magnetic force generating elements position keeps constant.
Preferably, in different plating membrane modules, it is respectively symmetrically relative to the height identical place of objective table and is provided with magnetic force
Generating elements.
Preferably, the pair of plating membrane module includes the column the first filming component and column the second plated film group that be arranged in parallel
Part, the magnetic force generating elements in the first filming component is disposed in proximity to the second plating membrane module side region, in the second plating membrane module
Magnetic force generating elements is disposed in proximity to the magnetic force in the side region of the first filming component one, the first filming component and in the second plating membrane module
Generating elements is all multiple, the magnetic force in closed hoop body or the first filming component and in the second plating membrane module is formed respectively and is produced
Part is respectively a ring bodies magnetic force generating elements, and each ring bodies central axis is with each plating membrane module central axis upright.
Preferably, the magnetic control sputtering film plating device includes multipair plating membrane module, and multipair plating membrane module is arranged at objective table
The same side, the objective table can be with respect to plated film component movement, and the direction of motion is perpendicular to the central shafts of multiple plating membrane modules
Line.
The technical scheme that the present invention solves technical problem is to provide a kind of magnetic control using above-mentioned magnetic control sputtering film plating device
Sputtering film coating method, it comprises the following steps：Sputtering target material is respectively arranged on a pair of plating membrane modules, workpiece is placed on load
On thing platform, make a pair of plating membrane module rotations so that sputtering target material is deposited on workpiece.
Compared with prior art, magnetron sputtering plating source of the present invention has advantages below：
(1) the magnetron sputtering plating source is by setting at least one pair of rotatable plating membrane module, and is arranged on each plating
Magnetic force generating elements in membrane module is identical towards the polarity of plating membrane module central axis, magnetic force generating elements court in difference plating membrane module
The opposite polarity of membrane module central axis is each plated to it, being plated in membrane module at a pair can produce the magnetic force in a plating membrane module
The magnetic line of force that part is produced is crossed in another plating membrane module from the plating membrane module, can control overheat in coating process
Electronics or other anions for carrying energy are strapped between two plating membrane modules by magnetic field, so as to greatly reduce bombardment workpiece
Chance, rises so as to effectively suppress technological temperature, and 100 DEG C are less than or equal to controlling reaction temperature, strengthens the magnetron sputtering
The range of application and application prospect of coating source.
(2) the bigger magnetic field of intensity is obtained in that by setting magnetic force generating elements formation closed hoop body, to improve plated film
Efficiency.And enclosed magnetic field can be formed such that it is able to better control over overheat electronics or other carry energy bear from
Son is strapped between two plating membrane modules by magnetic field, so as to greatly reduce the chance of bombardment workpiece such that it is able to control reaction temperature
Degree, realizes low temperature plated film.
(3) magnetic line of force closed component is set by each plating membrane module, so that magnetic force is produced in single plating membrane module
The magnetic line of force that part is produced only crosses another plating membrane module being oppositely arranged from the plating membrane module, so as to preferably fetter plated film mistake
The distribution of hot electron or other anions in journey.
Compared with prior art, magnetic control sputtering film plating device of the present invention has advantages below：
(1) magnetic control sputtering film plating device is by setting at least one pair of rotatable plating membrane module, and is arranged on each
Magnetic force generating elements in plating membrane module is identical towards the polarity of plating membrane module central axis, magnetic force generating elements in difference plating membrane module
The opposite polarity of membrane module central axis is each plated towards it, being plated in membrane module at a pair can produce the magnetic force in a plating membrane module
The magnetic line of force that raw part is produced crosses another plating membrane module from the plating membrane module, can control overheat in coating process
Electronics or other anions for carrying energy are strapped between two plating membrane modules by magnetic field, so as to greatly reduce bombardment workpiece
Chance, rises so as to effectively suppress technological temperature, and 100 DEG C are less than or equal to controlling reaction temperature.
(2) the magnetic force generating elements by setting in the first filming component is disposed in proximity to the second plating membrane module side region,
Magnetic force generating elements in second plating membrane module is disposed in proximity to the side region of the first filming component one, can make in the first filming component
The magnetic line of force that produces of magnetic force generating elements crossed from the plating membrane module and be oppositely arranged in the second plating membrane module, without first
Magnetic force generating elements is laid in other regions in plating membrane module and the second plating membrane module, can effectively utilize magnetic force generating elements, saves magnetic
The consumption of force generating member, reduces cost.
(3) the magnetic force generating elements by setting in the first filming component and in the second plating membrane module is all multiple, respectively shape
Into closed hoop body, each ring bodies central axis can produce magnetic force generating elements with each plating membrane module central axis upright
Raw magnetic line of force distribution is more dense, so as to improve plating membrane efficiency.
(4) by setting multipair plating membrane module, and the same side of objective table is arranged at, can realizes producing in enormous quantities.
Compared with prior art, magnetron sputtering coating method of the present invention has advantages below：
By using above-mentioned magnetic control sputtering film plating device, the magnetic that can produce the magnetic force generating elements in the first filming component
The line of force is crossed from the plating membrane module and is oppositely arranged the second plating membrane module, in coating process, can control the electronics of overheat
Or other anions for carrying energy are strapped between two cylindricality plating membrane modules by magnetic field, so as to greatly reduce bombardment workpiece
Chance, and can effectively suppress technological temperature rising, can control in the range of less than or equal to 100 DEG C, so as to realize that low temperature is plated
Film.Make a pair of plating membrane module rotations so that sputtering target material is deposited on workpiece, it is possible to increase the uniform journey of etching of sputtering target material
Degree, improves the utilization rate of sputtering target material.
【Brief description of the drawings】
Fig. 1 is magnetic control sputtering film plating device structural representation of the present invention, and magnetic control sputtering film plating device includes magnetron sputtering
Film source.
Fig. 2 is the main structure diagram of cooperation workpiece in magnetron sputtering plating source in Fig. 1.
Fig. 3 is a pair of plating membrane module dimensional structure diagrams in magnetron sputtering plating source.
Fig. 3 a are the first deformation knots of plane A where a pair of central axis of plating membrane module of the present invention and location of workpiece relation
Structure schematic diagram.
Fig. 3 b are the second deformation knots of plane A where a pair of central axis of plating membrane module of the present invention and location of workpiece relation
Structure schematic diagram.
Fig. 3 c are the second deformation knots of plane A where a pair of central axis of plating membrane module of the present invention and location of workpiece relation
Structure schematic diagram.
Fig. 3 d are the magnetic force generating elements enlarged diagram in magnetron sputtering plating source in Fig. 3
Fig. 4 is magnetic control sputtering film plating device of the present invention first distressed structure schematic diagram.
Fig. 5 a are magnetic control sputtering film plating device of the present invention second distressed structure schematic diagrames.
Fig. 5 b are the distressed structure schematic diagrames of magnetic control sputtering film plating device of the present invention 3rd.
Fig. 6 is the process flow diagram of magnetron sputtering coating method of the present invention.
【Specific embodiment】
In order that the purpose of the present invention, technical scheme and advantage become more apparent, below in conjunction with accompanying drawing and embodiment,
The present invention will be described in further detail.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention,
It is not intended to limit the present invention.
Also referring to Fig. 1 and Fig. 2, first embodiment of the invention provides magnetic control sputtering film plating device 1, and it includes a magnetic control
Sputtering film coating source 10.The magnetron sputtering plating source 10 includes a pair rotatable plating membrane modules 100 and is arranged at plating membrane module 100
Internal magnetic force generating elements 103.The magnetron sputtering plating source 10 is used to be the plated film of workpiece 200.
Preferably, the magnetic control sputtering film plating device 1 also includes preparing chamber 300, adapter cavity 400, vacuum mechanism 500 and valve
Door 600.The magnetron sputtering plating source 10 is oppositely arranged with workpiece 200, and is placed in preparation chamber 300.Adapter cavity 400 sets
It is placed in the preparation side of chamber 300 and is connected with chamber 300 is prepared.Vacuum mechanism 500 is connected with the inside of chamber 300 is prepared, and is specifically directly connected
Connect preparation chamber 300 or connected by wireway etc. and prepare chamber 300.Vacuum mechanism 500 is also connected with vavuum pump or air bleeding valve, thinks system
Standby chamber 300 vacuumizes.Adapter cavity 400 is used to isolate preparation chamber 300 and external environment, it is to avoid the broken ring of external environment prepares chamber 300
Internal atmosphere, valve 600 is set between adapter cavity 400 and preparation chamber 300.
In the present embodiment, each plating membrane module 100 is cylindricality, and it includes sputtering target stand 101, magnetic force generating elements 103
And make sputtering target stand 101 around the drive component 106 of the rotation of magnetic force generating elements 103.The sputtering target stand 101 is tubular, the magnetic
Force generating member 103 and drive component 106 are arranged inside sputtering target stand 101.The magnetic force generating elements 103 produces the magnetic line of force
1034.Multiple magnetic force generating elements 103 are set in each plating membrane module 100, and the multiple magnetic force generating elements 103 is along correspondence plated film
Component 100 be radially arranged and the magnetic force generating elements 103 to be disposed radially polarity identical, namely in each plating membrane module 100
Magnetic force generating elements 103 towards plating membrane module 100 central axis polarity it is identical.Magnetic force is produced in difference plating membrane module 100
Part 103 each plates what is be oppositely arranged in the opposite polarity of the central axis of membrane module 100, namely different plating membrane modules 100 towards it
The opposite polarity of magnetic force generating elements 103, plates in membrane module 100 at a pair, can make the magnetic force generating elements 103 in a plated film group 100
The magnetic line of force 1034 of generation is crossed in another plating membrane module 100 from the plating membrane module 100.Wherein, in coating process, plated film
Component 100 can be around its center axis rotation, and the position of magnetic force generating elements 103 keeps constant.Specifically, sputtering target stand 101 is around plating
The central axis rotation of membrane module 100, and the position of magnetic force generating elements 103 keeps constant.
Also referring to Fig. 2 and Fig. 3, the pair of plating membrane module 100 includes the column the first filming component that flat shape is set
The 100a and plating membrane module of column second 100b.The surface spacing of the plating membrane modules of the first filming component 100a and second 100b is 20-
500mm, preferably 20-300mm, it is further preferred that between the two away from being 200mm, to ensure in the first filming component 100a
The magnetic line of force 1034 that magnetic force generating elements 103 is produced is crossed from plating membrane module 100a and is oppositely arranged the second plating membrane module
100b.The plating membrane modules of the first filming component 100a and second 100b is located at the homonymy of workpiece 200.The first filming component
100a defines central axis O1O2, the second plating membrane module 100b define central axis O3O4, the first filming component 100a with
Second plating membrane module 100b parallel fingers are exactly that the central axis O1O2 and second of the first filming component 100a plates membrane module 100b
Central axis O3O4 it is parallel and contour relative to workpiece 200.Central axis O1O2 and O3O4 can it is parallel relative to workpiece 200 or
Incline.As plane A where Fig. 3 a, 3b and 3c central axis O1O2 and O3O4 is parallel with workpiece 200 or inclines to for workpiece 200
Tiltedly.The first filming component 100a is oppositely arranged with the second plating membrane module 100b.Relative to wherein in the first filming component 100a
Produced in the magnetic force set relative to its center axis O3O4 corresponding positions in the plating membrane modules of heart axes O 1O2 and second 100b
The opposite polarity of part 103, namely the first filming component 100a is interior towards its corresponding central axis with the second plating membrane module 100b
The opposite polarity of magnetic force generating elements.Fig. 2 is specifically see, in the first filming component 100a, magnetic force generating elements 103 is towards its center
The polarity of axes O 1O2 is all S, and in the second plating membrane module 100b, and magnetic force generating elements 103 is towards the pole of its center axis O3O4
Property be all N, thus, the magnetic force generating elements 103 of the relative orientation in the platings of the first filming component 100a and second membrane module 100b
Polarity is then respectively N and S, opposite polarity.
Preferably, plating membrane module 100 radial cross-section is for rule or irregularly closes linear etc..Further, it is described
Plating membrane module 100 radial cross-sectional shape is circular, oval, triangle or polygon.The preferred plated film in the present embodiment
The radial cross-sectional shape of component 100 is circle, i.e., described plating membrane module 100 is cylinder.
The sputtering target stand 101 includes inwall 1013 and outer wall 1011, and the magnetic force generating elements 103 is fixed and is placed in sputtering
In target stand 101, and it is radially arranged along inwall 1013, but is not contacted with inwall 1013.For example, can be in the plating membrane module 100
Setting fixture along central axis is used to fix magnetic force generating elements 103.The central axis namely sputtering target of the plating membrane module 100
The central axis of seat 101 and inwall 1013.In coating process, the magnetic force generating elements 103 is to maintain static, and the sputtering target
Central axis rotation of the seat 101 around the plating membrane module 100.The surface of the outer wall 1011 is used to set sputtering target material 107, described
The outer wall 1011 of the size of the sputtering target material 107 matching sputtering target stand 101, namely outer wall 1011 of fitting completely.Wherein, it is described to splash
The distance that material 107 of shooting at the target arrives workpiece 200 is 20-80mm, it is preferable that distance is 40-50mm.In coating process, the sputtering target
Material 107 is together with sputtering target stand 101 around the central axis rotation of the plating membrane module 100.
Preferably, the plating membrane module 100 also includes cooling bath 105.The cooling bath 105 is inside sputtering target stand 101
Cavity, for being passed through coolant, such as water, is controlled with to the technological temperature in coating process.Continue to lead to in cooling bath 105
Enter coolant, and keep coolant full of whole cooling bath 105, so as to being preferably the sputtering target of rotation in coating process
Material 107 is lowered the temperature.Preferably, the plating membrane module 100 sets the water pipe of both ends open along central axis, and one end is in plating membrane module
100 is outer for being passed through coolant, and one end is located inside plating membrane module 100, the coolant being passed through directly is flowed from water pipe
To in whole cooling bath 105.Preferably, the magnetic force generating elements 103 and the surface of drive component 106 coating anti-corrosion or isolation etc. are applied
Layer, to completely cut off coolant, the extension plating service life of membrane module 100.
Preferably, further referring to Fig. 1, auxiliary electrode 800, i.e. magnetron sputtering are set in the outside of plating membrane module 100
The outside of film source 10 sets auxiliary electrode 800.In coating process, due to the plating implementation of membrane module 100 is back bias voltage, by auxiliary
Electrode 800 implements positive bias, and voltage difference is 5-100V between auxiliary electrode 800 and plating membrane module 100 as described, using there is a natural attraction between the sexes
Principle, the hot electron produced in sputter procedure or other anion electronics are adsorbed onto the surface of auxiliary electrode 800, reduced
The bombardment of thermoelectron or other anions to the surface of workpiece 200, so that the temperature rise of workpiece 200 is further reduced, so as to realize length
Time low temperature plated film.Preferably, the voltage difference is 10-99V, 20-90V, 30-80V, 30-60V, 40-90V, 40-50V, 45-
60V, 40-80V or 50-90V.
Magnetic force generating elements 103 in each plating membrane module 100 is identical towards the polarity of the central axis of inwall 1013, different
Magnetic force generating elements 103 is corresponded in the opposite polarity of central axis, namely different plating membrane modules 100 towards it in plating membrane module 100
The opposite polarity of the magnetic force generating elements 103 of relative orientation.
The workpiece 200 is that glass substrate, ceramic substrate, silicon chip, sheet metal, titanium deoxid film or heatproof are relatively low
Macromolecule substrate etc. it is therein any one.
Referring again to Fig. 1, supporting mechanism 301 and loading mechanism 303 are also set up in the preparation chamber 300.Magnetron sputtering
Film source 10 is fixed on supporting mechanism 301.The supporting mechanism 301 includes the internal electric field organization of supply 3011 for setting, described
Electric field organization of supply 3011 connects sputtering target material 107, coordinates with magnetic force generating elements 103, so as to be sputtering in coating process
Target 107 provides electromagnetic field.The loading mechanism 303 includes drive mechanism 3031, for supporting and drives workpiece 200 to move.
In some embodiments of the invention, the loading mechanism 303 also includes objective table 3033, the objective table 3033 and plating membrane module
100 is separated by a distance.Objective table 3033 is used to carry workpiece 200.Preferably, the objective table 3033 is conveyer belt, movement
Disk, movable plate or round roller etc..Drive mechanism 3031 connects objective table 3033, with the relative plating membrane module 100 of driving objective table 3033
Motion, the direction of motion of the objective table plates the central axis of membrane module 100 perpendicular to multiple.In different plating membrane modules 100,
Relative to the height identical position of objective table 3033, the opposite polarity magnetic force generating elements of relative orientation is each symmetrically arranged with
103。
Biography piece component 401 is provided with the adapter cavity 400.The biography piece component 401 includes manipulator, driving wheel or gloves
Case etc., for workpiece 200 to be sent in preparation chamber 300.
The valve 600 is arranged between preparation chamber 300 and adapter cavity 400, for facilitating conveying work pieces 200, and every
From chamber 300 is prepared, destruction prepares the reaction atmosphere in the coating process of chamber 300 when preventing conveying work pieces 200.
Please refer to Fig. 2, Fig. 3 and Fig. 3 d in the lump again, plating membrane module 100 can include multiple magnetic force generating elements 103.The magnetic
The specific set location of force generating member 103 is：Magnetic force generating elements 103 in the first filming component 100a is disposed in proximity to the second plated film
The side regions of component 100b mono-, the magnetic force generating elements 103 in the second plating membrane module 100b is disposed in proximity to the first filming component 100a
One side region, and it is close to the setting of the side region of objective table 3,033 1.
Magnetic force generating elements 103 can select the magnets such as magnet steel, soft magnetic bodies.One or more are set in each sputtering target stand 101
Magnetic force generating elements 103, and the quantity of magnetic force generating elements 103 for setting is identical.Preferably, set in each sputtering target stand 101
Multiple magnetic force generating elements 103.Wherein, in each plating membrane module 100, multiple magnetic force generating elements 103 are arranged to and inwall 1013
Two rows of centerline axis parallel, more preferably, multiple magnetic force generating elements 103 form closed hoop body, tool along the inner side of inwall 1013
Body is as shown in Figure 3 d.Central axis upright of the central axis of each ring bodies with each plating membrane module 100.The magnetic force is produced
Part 103 has the opposite polarity of the first magnetic pole 1031 and the second magnetic pole 1033, the first magnetic pole 1031 and the second magnetic pole 1033.As schemed
Shown in 3d, in every plating membrane module 100, multiple magnetic force 103 pole polarities towards the side of inwall 1013 of generating elements of setting are identical,
And be formed in parallel with two rows of the central axis of plating membrane module 100, that is, set towards central axis O1O2 (O3O4) magnetic force and produce
The pole polarity of part 103 is identical.Specifically：Magnetic force generating elements 103 towards central axis is set in the first filming component 100a
O1O2 sides are the first magnetic pole 1031, then set magnetic force generating elements 103 towards central axis in the second plating membrane module 100b
O3O4 sides are the second magnetic pole 1033.Or magnetic force generating elements 103 towards center is set in the first filming component 100a
Axes O 1O2 sides are the second magnetic pole 1033, then set magnetic force generating elements 103 towards center in the second plating membrane module 100b
Axes O 3O4 sides are the first magnetic pole 1031.Magnetic force generating elements 103 i.e. in the first filming component 100a is towards its center
The polarity of axes O 1O2 is identical, and the magnetic force generating elements 103 in the second plating membrane module 100b is towards the pole of its center axis O3O4
Property is identical.Namely the magnetic force generating elements 103 in the first filming component 100a, the second plating membrane module 100b is towards respective central axis
Opposite polarity, namely in different plating membrane module 100 the magnetic force generating elements 103 of relative orientation opposite polarity.First plating
In the plating membrane modules of membrane module 100a and second 100b the relative court of setting is respectively symmetrically to the height identical place of objective table 3033
To opposite polarity magnetic force generating elements 103.It can also be expected that the magnetic force generating elements 103 in described two plating membrane modules 100 exists
It is specular in set location, but opposite polarity.
By being arranged on polarity phase of the magnetic force generating elements 103 in the first filming component 100a towards its center axis O1O2
Together, the magnetic force generating elements 103 in the second plating membrane module 100b is identical towards the polarity of its center axis O3O4, and the first filming
The opposite polarity of the magnetic force generating elements 103 of relative orientation in component 100a, the second plating membrane module 100b, so that the first filming component
The magnetic line of force 1034 that magnetic force generating elements 103 is produced in 100a crosses the second plated film being oppositely arranged from the first filming component 100a
Component 100b.
Preferably, soft magnetic bodies or other magnetic line of force closed components, the soft magnetism are set in each plating membrane module 100
Body or other magnetic line of force closed components matching magnetic force generating elements 103 are set, so that magnetic force generating elements in single plating membrane module 100
103 magnetic lines of force 1034 for producing only cross another plating membrane module 100 being oppositely arranged from the plating membrane module 100, so that more preferably
Constraint coating process in hot electron or other anions distribution.
Magnetic force generating elements 103 is so set so that the magnetic line of force that magnetic force generating elements 103 is produced in a plating membrane module 100
1034 only cross another plating membrane module 100 being oppositely arranged from the plating membrane module 100 so that overheat electronics or other take
Anion with energy is strapped between two plating membrane modules 100 by magnetic field, and is distributed in limited area 700, greatly reduces bombardment
The chance on the surface of workpiece 200, so that it is too high effectively to suppress technological temperature.Therefore in coating process, workpiece can be efficiently controlled
200 and technological temperature be less than or equal to 100 DEG C.Preferably, in coating process, workpiece 200 and technique can also be efficiently controlled
Temperature is less than or equal to 70 DEG C.
The present invention some preferably in embodiment, sputtered in target stand 101 at one, a magnetic force generating elements 103, institute are set
Magnetic force generating elements 103 is stated for closed hoop body, its two surface radially is first type surface, two first type surface institute band polarity
Conversely.
In coating process, sputtering target stand 101 is set and is rotated, to improve the uniformity coefficient of the etching of sputtering target material 107, so that
The utilization rate of sputtering target material 107 is improved, and the chance of the particulates such as film pin hole generation is greatly decreased.Wherein, multiple plating membrane modules
100 sputtering target stand 101 can individually drive rotation by multiple drive components 106, can also be by a driving group
Part 106 drives simultaneous rotation.
As the first deformation, the present invention some preferably in embodiment, the magnetic control sputtering film plating device 1 includes multipair
Plating membrane module 100.Fig. 4 is referred to, the magnetic control sputtering film plating device 1 includes four pairs of plating membrane modules 100.
Preferably, multipair plating membrane module 100 is linearly arranged, and is arranged at the same side of objective table 3033, in multipair plating
In membrane module 100, the central axis of each plating membrane module 100 is each parallel to objective table 3033.In coating process, the objective table
3033 relative plating membrane modules 100 are moved, and the direction of motion of objective table 3033 is perpendicular to the central axis of multiple plating membrane module 100.
Fig. 5 a are referred to, used as the second deformation, the magnetic control sputtering film plating device 1 can be straight tunnel formula framework.I.e.
At least two adapter cavities 400 of the magnetic control sputtering film plating device 1, prepare chamber 300 and are disposed therein between two adapter cavities 400.Prepare
Chamber 300 sets at least magnetron sputtering coating source 10.Preferably, two adapter cavities 400 are set.The both sides of the adapter cavity 400 are all provided with
Valve 600 is put, specifically, is used to isolate preparation chamber 300 and adapter cavity 400 near the side valve 600 of chamber 300 is prepared, with convenient
Conveying work pieces 200；Away from prepare the side of chamber 300 valve 600 be used as atmospheric vacuum exchange valve, with isolated vacuum environment with it is big
Compression ring border, it is to avoid the reaction atmosphere destroyed during magnetron sputtering plating during conveying work pieces 200.During magnetron sputtering plating,
First enter piece, that is, open the valve 600 between the adapter cavity 400 and preparation chamber 300 being sequentially arranged, pass piece component 401 by workpiece
200 are sent to preparation chamber 300；Drive mechanism 3031 continues to transmit；Slice again, that is, open the preparation chamber 300 that is sequentially arranged with
Valve 600 between adapter cavity 400, preparation chamber 300 is sent out by the workpiece 200 after the completion of thin-film-coating.By setting magnetic
It is straight tunnel formula framework that control Sputting film-plating apparatus 1 are so that can be coated with multigroup different materials, and the controllable film layer that obtains is folded
Structure, component and thickness etc., while enter piece carried out in order with slice, and it is simple to operate, easily realize production line operation.
Fig. 5 b are referred to, used as the 3rd deformation, the magnetic control sputtering film plating device 1 can also be cluster type framework, its bag
Include a center and pass piece vacuum chamber 40, the center passes piece vacuum chamber 40 and correspondingly can set at least two preparation chambers 300.The center is true
Empty pass sheet chamber 40 includes passing piece component 401.The biography piece component 401 including manipulator, driving wheel or glove box etc., for by work
Part 200 is sent to preparation chamber 300, and the workpiece 200 that plated film is completed is carried back into Central Vacuum pass sheet chamber 40.In coating process
In, first enter piece, that is, open Central Vacuum pass sheet chamber 40 and prepare the valve 600 between chamber 300, piece component 401 is passed by workpiece 200
It is sent to preparation chamber 300；The driving objective table 3033 of drive mechanism 3031 is driving in the small distance of workpiece 200 back and forth movement back and forth；
After slice, i.e. plated film are complete again, the valve 600 prepared between chamber 300 and Central Vacuum pass sheet chamber 40 is opened, after the completion of being coated with
Workpiece 200 carry out preparation chamber 300.By setting magnetic control sputtering film plating device 1 to be cluster type framework, device can be saved
Take up room.By controlling the back and forth movement back and forth in 5mm-200mm small distances of workpiece 200, can be with improve production efficiency.Simultaneously
Setting a central piece vacuum chamber 40 that passes can correspond at least two preparation chambers 300, be greatly improved production capacity.
Second embodiment of the invention is provided using the magnetron sputtering coating method of above-mentioned magnetic control sputtering film plating device 1, its bag
Include following steps：Step S1：Sputtering target material 107 is respectively arranged on a pair of plating membrane modules 100, step S2：Workpiece 200 is put
Put on objective table 3033, rotate a pair of plating membrane modules 100 so that sputtering target material 107 is deposited on workpiece 200, specific work
Skill flow is as follows：
Step S1 is specially：Above-mentioned magnetic control sputtering film plating device 1 is provided, at least one pair of plating membrane module 100 is installed
(100a, 100b) is on supporting mechanism 301.The arrangement position of magnetic force generating elements 103 in regulation plating membrane module 100, so that first
The magnetic line of force 1034 that magnetic force generating elements 103 in plating membrane module 100a is produced is crossed from the first filming component 100a and is oppositely arranged
The magnetic force generating elements 103 of the second plating membrane module 100b.The power of electric field organization of supply 3011 is set, valve 600 is closed and to system
Standby chamber 300 and adapter cavity 400 (or Central Vacuum pass sheet chamber 40) are vacuumized, and are evacuated to 10-5Pa-10Pa, is then persistently taking out
Inert gas is passed through while vacuum, the present embodiment is preferably argon gas so that air pressure inside is maintained in the range of 0.1-10Pa.Adjust
Economize on electricity field organization of supply 3011 to required power, the rotating speed for setting plating membrane module 100 is 0.1-1200r/min, and the present invention is implemented
Example is preferably 10-50r/min.It is continually fed into flowing cooling water.The rate travel of the drive workpiece 200 of drive mechanism 3031 is set
It is 5mm/s-200mm/s.
The second plating membrane module 100b is oppositely arranged because the first filming component 100a of the magnetic line of force 1034 is crossed, can be controlled
The electronics of overheat or other anions for carrying energy are strapped between two cylindricality magnetic control sputtering film coating sources 10 by magnetic field, so that
Greatly reduce the chance of bombardment workpiece, so as to control to prepare the reaction temperature of chamber 300 less than or equal to 100 DEG C.Preferably, can control
Reaction temperature is less than or equal to 70 DEG C
Sputtering target material 107 to be sputtered is separately mounted on a pair of outer walls of sputter coating component 1011, and opens electricity
Field organization of supply 3011.Workpiece 200 is carried out by plasma pretreatment using plasma washing equipment, biography is transferred to after drying
On the correct position of piece component 401.The workpiece 200 for being used of embodiment of the present invention magnetic control sputtering device 1 can be large scale work
Small rigid workpiece on part, coiled strip workpiece or coiled strip carrier.For large-size workpiece, coiled strip workpiece or coiled strip carrier its length
Unrestricted, width can be 200mm-2000mm, and thickness is 0.1mm-10mm.The sputtering target material 107 can be from multiple
Small workpiece is stitched together to form tubular or single cylindrical work pieces, and the size matching sputtering outer wall 1011 of target stand 101.Select big chi
Very little workpiece, coiled strip workpiece or coiled strip carrier, can quickly and consistently produce the film of large scale or large area, when shortening production
Between, be conducive to efficiently batch production.
Step S2 is specially：Startup program, passes piece component 401 and workpiece 200 is placed on objective table 3033, threshold electric field
Organization of supply 3011 and drive mechanism 3031, rotatable sputtering target 107 start plated film.Wherein regulation plating membrane module 100 rotates,
Control workpiece 200 in one direction or make back and forth movement back and forth.Need to be rotated by controlling plating membrane module 100 in coating process
The rate travel of speed and workpiece 200 adjusts deposit thickness.The speed of rotation is slower, and workpiece 200 moves slower, deposit thickness
It is thicker.
The magnetron sputtering coating method uses above-mentioned magnetic control sputtering film plating device 1, by setting at least magnetron sputtering
Coating source 10, and the arrangement position of magnetic force generating elements 103 is adjusted, so that the magnetic force generating elements 103 in the first filming component 100a
The magnetic line of force 1034 of generation is crossed from the first filming component 100a and is oppositely arranged the second plating membrane module 100b, can be in plated film mistake
Cheng Zhong, controls the electronics or other anions for carrying energy of overheat to be strapped between two cylindricality plating membrane modules 100 by magnetic field,
So as to greatly reduce the chance of bombardment workpiece, and can effectively suppress technological temperature rising, and control less than or equal to 100 DEG C.
Control sputtering target material 107 to rotate simultaneously, the etching homogeneity of sputtering target material 107 can be improved, so as to improve the profit of sputtering target material 107
With rate.
Compared with prior art, magnetron sputtering plating source of the present invention has advantages below：
(1) the magnetron sputtering plating source is by setting at least one pair of rotatable plating membrane module, and is arranged on each plating
Magnetic force generating elements in membrane module is identical towards the polarity of plating membrane module central axis, magnetic force generating elements court in difference plating membrane module
The opposite polarity of membrane module central axis is each plated to it, being plated in membrane module at a pair can produce the magnetic force in a plating membrane module
The magnetic line of force that part is produced is crossed in another plating membrane module from the plating membrane module, can control overheat in coating process
Electronics or other anions for carrying energy are strapped between two plating membrane modules by magnetic field, so as to greatly reduce bombardment workpiece
Chance, rises so as to effectively suppress technological temperature, and 100 DEG C are less than or equal to controlling reaction temperature, strengthens the magnetron sputtering
The range of application and application prospect of coating source.
(2) the bigger magnetic field of intensity is obtained in that by setting magnetic force generating elements formation closed hoop body, to improve plated film
Efficiency.And enclosed magnetic field can be formed such that it is able to better control over overheat electronics or other carry energy bear from
Son is strapped between two plating membrane modules by magnetic field, so as to greatly reduce the chance of bombardment workpiece such that it is able to control reaction temperature
Degree, realizes low temperature plated film.
(3) magnetic line of force closed component is set by each plating membrane module, so that magnetic force is produced in single plating membrane module
The magnetic line of force that part is produced only crosses another plating membrane module being oppositely arranged from the plating membrane module, so as to preferably fetter plated film mistake
The distribution of hot electron or other anions in journey.
Compared with prior art, magnetic control sputtering film plating device of the present invention has advantages below：
(1) magnetic control sputtering film plating device is by setting at least one pair of rotatable plating membrane module, and is arranged on each
Magnetic force generating elements in plating membrane module is identical towards the polarity of plating membrane module central axis, magnetic force generating elements in difference plating membrane module
The opposite polarity of membrane module central axis is each plated towards it, being plated in membrane module at a pair can produce the magnetic force in a plating membrane module
The magnetic line of force that raw part is produced crosses another plating membrane module from the plating membrane module, can control overheat in coating process
Electronics or other anions for carrying energy are strapped between two plating membrane modules by magnetic field, so as to greatly reduce bombardment workpiece
Chance, rises so as to effectively suppress technological temperature, and 100 DEG C are less than or equal to controlling reaction temperature.
(2) the magnetic force generating elements by setting in the first filming component is disposed in proximity to the second plating membrane module side region,
Magnetic force generating elements in second plating membrane module is disposed in proximity to the side region of the first filming component one, can make in the first filming component
The magnetic line of force that produces of magnetic force generating elements crossed from the plating membrane module and be oppositely arranged in the second plating membrane module, without first
Magnetic force generating elements is laid in other regions in plating membrane module and the second plating membrane module, can effectively utilize magnetic force generating elements, saves magnetic
The consumption of force generating member, reduces cost.
(3) the magnetic force generating elements by setting in the first filming component and in the second plating membrane module is all multiple, respectively shape
Into closed hoop body, each ring bodies central axis can produce magnetic force generating elements with each plating membrane module central axis upright
Raw magnetic line of force distribution is more dense, so as to improve plating membrane efficiency.
(4) by setting multipair plating membrane module, and the same side of objective table is arranged at, can realizes producing in enormous quantities.
Compared with prior art, magnetron sputtering coating method of the present invention has advantages below：
By using above-mentioned magnetic control sputtering film plating device, the magnetic that can produce the magnetic force generating elements in the first filming component
The line of force is crossed from the plating membrane module and is oppositely arranged the second plating membrane module, in coating process, can control the electronics of overheat
Or other anions for carrying energy are strapped between two cylindricality plating membrane modules by magnetic field, so as to greatly reduce bombardment workpiece
Chance, and can effectively suppress technological temperature rising, can control in the range of less than or equal to 100 DEG C, so as to realize that low temperature is plated
Film.Make a pair of plating membrane module rotations so that sputtering target material is deposited on workpiece, it is possible to increase the uniform journey of etching of sputtering target material
Degree, improves the utilization rate of sputtering target material.
The foregoing is only present pre-ferred embodiments, be not intended to limit the invention, it is all principle of the present invention it
Interior made any modification, equivalent and improvement etc. all should be comprising within protection scope of the present invention.
Claims (10)
1. a kind of magnetron sputtering plating source, for being workpiece plated film, it is characterised in that：It includes a pair rotatable plated film groups
Part, each plating membrane module includes that sputtering target stand and sputtering target stand inside set magnetic force generating elements, the magnetic in each plating membrane module
Force generating member is identical towards the polarity of plating membrane module central axis, and magnetic force generating elements is towards its respective plated film in difference plating membrane modules
The opposite polarity of component central axis；In coating process, membrane module rotation is plated, and magnetic force generating elements position keeps constant.
2. magnetron sputtering plating source as described in claim 1, it is characterised in that：The magnetic force in each plating membrane module is produced
Raw part is multiple, and forms the magnetic force generating elements in closed hoop body or each plating membrane module for a ring bodies magnetic force is produced
Part.
3. magnetron sputtering plating source as described in claim 1, it is characterised in that：Magnetic force is set in each plating membrane module
Line closed component.
4. magnetron sputtering plating source as described in claim 1, it is characterised in that：Each plating membrane module is cylindricality, often
Magnetic force generating elements being radially arranged along correspondence plating membrane module in one plating membrane module.
5. the magnetron sputtering plating source as described in claim any one of 1-4, it is characterised in that：The sputtering target stand includes outer
Wall, the outer wall be used for fix sputtering target material in its away from inwall surface.
6. a kind of magnetic control sputtering film plating device, it is characterised in that：It include at least one pair of it is rotatable plating membrane module and with the plating
Membrane module objective table separated by a distance, each plating membrane module includes that the magnetic force that sputtering target stand and sputtering target stand inside are set is produced
Raw part, the magnetic force generating elements in each plating membrane module is identical towards the polarity of plating membrane module central axis, difference plating membrane module
Interior magnetic force generating elements each plates the opposite polarity of membrane module central axis towards it；In coating process, plating membrane module rotation, and magnetic
Force generating member position keeps constant.
7. magnetic control sputtering film plating device as described in claim 6, it is characterised in that：In difference plating membrane module, relative to load
The height identical place of thing platform is respectively symmetrically and is provided with magnetic force generating elements.
8. magnetic control sputtering film plating device as described in claim 6, it is characterised in that：The pair of plating membrane module includes parallel
Column the first filming component and column second the plating membrane module of setting, the magnetic force generating elements in the first filming component are disposed in proximity to
Second plating membrane module side region, the magnetic force generating elements in the second plating membrane module is disposed in proximity to the lateral areas of the first filming component one
Domain, the magnetic force generating elements in the first filming component and in the second plating membrane module is all multiple, formed respectively closed hoop body or
Magnetic force generating elements in the first filming component and in the second plating membrane module is respectively a ring bodies magnetic force generating elements, each ring-type
Body central axis is with each plating membrane module central axis upright.
9. the magnetic control sputtering film plating device as described in claim any one of 6-8, it is characterised in that：The magnetron sputtering plating dress
Put including multipair plating membrane module, multipair plating membrane module is arranged at the same side of objective table, the objective table can be with respect to plated film group
Part is moved, and the direction of motion is perpendicular to the central axis of multiple plating membrane module.
10. a kind of magnetron sputtering coating method, using the magnetic control sputtering film plating device as described in claim any one of 6-8, it is special
Levy and be：It comprises the following steps：Sputtering target material is respectively arranged on a pair of plating membrane modules, workpiece is placed on objective table
On, make a pair of plating membrane module rotations so that sputtering target material is deposited on workpiece.
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| CN201611232745.6A CN106906447A (en) | 2016-12-27 | 2016-12-27 | Magnetron sputtering plating source and its apparatus and method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108315704A (en) * | 2018-02-26 | 2018-07-24 | 沈阳中北真空技术有限公司 | A kind of magnetron sputtering optical coating apparatus and film plating process |
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