CN106904599A - A kind of method for preparing figure Graphene on an insulating substrate - Google Patents
A kind of method for preparing figure Graphene on an insulating substrate Download PDFInfo
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- CN106904599A CN106904599A CN201510952653.4A CN201510952653A CN106904599A CN 106904599 A CN106904599 A CN 106904599A CN 201510952653 A CN201510952653 A CN 201510952653A CN 106904599 A CN106904599 A CN 106904599A
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- graphene
- germanium film
- preparing
- insulating substrate
- dielectric substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
Abstract
The present invention provides a kind of method for preparing figure Graphene on an insulating substrate, including：1）A dielectric substrate is provided, in depositing germanium film in dielectric substrate；2）Required figure is etched in germanium film using lithographic etch process, figure germanium film is formed；And step 3）With the figure germanium film as catalyst, Graphene is grown at high temperature, meanwhile, figure germanium film constantly evaporates at high temperature, and is finally entirely removed, and acquisition is incorporated into the figure Graphene in dielectric substrate.The present invention by preparing germanium film on an insulating substrate, and after germanium film described in chemical wet etching forms required figure, catalytic growth Graphene, and by germanium film evaporative removal while growth, obtain figure Graphene on insulator, overcome and the pollution such as brought photoresist is performed etching to Graphene using lithographic etch process, improve the quality and performance of figure grapheme material on insulator.The figure Graphene being of high quality can be obtained using the method for the present invention.
Description
Technical field
The present invention relates to a kind of preparation method of Graphene, more particularly to a kind of side for preparing figure Graphene on an insulating substrate
Method.
Background technology
Graphene has unusual electric conductivity, the intensity beyond steel decades of times and fabulous translucency, and it has
Hoping trigger one to take turns revolution in hyundai electronicses sciemtifec and technical sphere.In Graphene, electronics can be migrated extremely efficiently, and traditional half
Conductor and conductor, such as silicon and the copper Graphene that is far from show must well.Due to the collision of electronics and atom, traditional semiconductor and
The form of conductor heat releases some energy, and general computer chip wastes the electric energy of 72%-81%, graphite by this way
Alkene is then different, and its electron energy will not be depleted, and this makes it be provided with extraordinary good characteristic.
Since the method that the two of Univ Manchester UK scientists in 2004 are peeled off using micromechanics finds Graphene, stone
The appearance of black alkene has evoked huge great waves.Graphene makes in the impayable advantage of the aspect of performances such as physics, chemistry, mechanics
It is gathered around in fields such as electronics, information, the energy, material and biological medicines and has broad application prospects
Preparation method predominantly metal (nickel, copper etc.) catalytic chemical vapor deposition technique of individual layer large-area graphene is obtained at present,
In order to the application of electronic applications is, it is necessary to transfer graphene in dielectric substrate, but the presently used transfer method step for arriving is multiple
It is miscellaneous, it is easy to cause fold, the pollution of Graphene, the performance of Graphene will certainly be reduced.
In order to Graphene is defined into figure, the method for often using at present is that large-area graphene is used the side of traditional chemical wet etching
Method, and the graphenic surface photoresist crossed using oxygen plasma etch is very difficult to, except clean, pollute quite serious.Therefore exhausted
It is a very big challenge that patterned Graphene is directly prepared on edge substrate.
In view of the above, how to realize that a kind of method that can directly prepare figure Graphene on an insulating substrate has important
Meaning.
The content of the invention
The shortcoming of prior art, figure graphite is prepared it is an object of the invention to provide one kind on an insulating substrate in view of the above
The method of alkene, the method for solving in the prior art by shifting prepares Graphene in dielectric substrate and easily causes Graphene performance
The problem of decline.
In order to achieve the above objects and other related objects, the present invention provides a kind of method for preparing figure Graphene on an insulating substrate,
Methods described includes step：Step 1), there is provided a dielectric substrate, in depositing germanium film in the dielectric substrate；Step 2),
Required figure is etched in the germanium film using lithographic etch process, figure germanium film is formed；And step 3), with institute
Figure germanium film is stated for catalyst, Graphene is grown at high temperature, meanwhile, figure germanium film constantly evaporates at high temperature, and most
It is entirely removed eventually, acquisition is incorporated into the figure Graphene in dielectric substrate.
As a kind of preferred scheme of the method for preparing figure Graphene on an insulating substrate of the invention, step 1) in, it is described
Dielectric substrate has the one kind in silicon substrate, Sapphire Substrate and the quartz substrate of silica including surface.
As a kind of preferred scheme of the method for preparing figure Graphene on an insulating substrate of the invention, step 1) in, use
The method of magnetron sputtering in the dielectric substrate in depositing germanium film.
As a kind of preferred scheme of the method for preparing figure Graphene on an insulating substrate of the invention, step 1) in, deposition
Germanium film thickness range be 10~500nm.
As a kind of preferred scheme of the method for preparing figure Graphene on an insulating substrate of the invention, step 2) in, it is described
The position that germanium film is etched is all removals, until exposing the dielectric substrate.
As a kind of preferred scheme of the method for preparing figure Graphene on an insulating substrate of the invention, step 3) in, with gas
State carbon source is raw material in the germanium film superficial growth Graphene.
Further, the gaseous carbon source includes one or more the combination in methane, acetylene, ethene.
As a kind of preferred scheme of the method for preparing figure Graphene on an insulating substrate of the invention, step 3) in, use
Chemical vapour deposition technique is in the figure germanium film superficial growth Graphene.
As a kind of preferred scheme of the method for preparing figure Graphene on an insulating substrate of the invention, step 3) in, it is described
The temperature range of high temperature is 850~937 DEG C.
As a kind of preferred scheme of the method for preparing figure Graphene on an insulating substrate of the invention, step 3) in, it is described
The retention time of high temperature, the retention time scope of the high temperature was at least above the times of the figure germanium film whole evaporation
30~300min.
As described above, the method for preparing figure Graphene on an insulating substrate of the invention, has the advantages that：The present invention
By preparing germanium film on an insulating substrate, and after germanium film described in chemical wet etching forms required figure, catalytic growth Graphene,
And germanium film evaporative removal is obtained into figure Graphene on insulator while growth, not only overcome traditional handicraft use
Transfer method prepares such as pollution, the gauffer influence that Graphene on insulator is brought, while overcome using lithographic etch process
The pollution such as brought photoresist is performed etching to Graphene, the quality and performance of figure grapheme material on insulator is improve.
The figure Graphene being of high quality can be obtained using the method for the present invention.Step of the present invention is simple, effect is significant, in Graphene
Preparation field is with a wide range of applications.
Brief description of the drawings
Fig. 1 be shown as it is of the invention prepare figure Graphene on an insulating substrate method the step of schematic flow sheet.
Fig. 2~Fig. 6 be shown as invention prepare the structural representation that each step of method of figure Graphene is presented on an insulating substrate
Figure.
Fig. 7 is shown as the optical photograph of the figure germanium film prepared by the present invention.
Fig. 8 is shown as the optical photograph of figure Graphene on the obtained insulator of invention.
Fig. 9 is shown as the Raman spectrogram of figure Graphene on the insulator of the present embodiment acquisition.
Figure 10 is shown as the Raman spectrum 2D peak figures of figure Graphene on the insulator that the present invention is obtained.
Component label instructions
101 dielectric substrates
102 germanium films
103 figure germanium films
104 Graphenes
S11~S13 steps 1)~step 3)
Specific embodiment
Embodiments of the present invention are illustrated below by way of specific instantiation, those skilled in the art can be as disclosed by this specification
Content understand other advantages of the invention and effect easily.The present invention can also add by way of a different and different embodiment
To implement or apply, the various details in this specification can also be based on different viewpoints and application, without departing from essence of the invention
Various modifications or alterations are carried out under god.
Refer to Fig. 1~Figure 10.It should be noted that the diagram provided in the present embodiment only illustrates of the invention in a schematic way
Basic conception, component count, shape when only display is with relevant component in the present invention rather than according to actual implementation in illustrating then and
Size is drawn, and it is actual when the implementing kenel of each component, quantity and ratio can be a kind of random change, and its assembly layout type
State is likely to increasingly complex.
As shown in Fig. 1~Fig. 5, the present embodiment provides a kind of method for preparing figure Graphene 104 on the insulating substrate 101, institute
Stating method includes step：
As shown in Fig. 1~Fig. 2, step 1 is carried out first) S11, there is provided a dielectric substrate 101, in the dielectric substrate 101
Deposition germanium film 102.
As an example, the dielectric substrate 101 has silicon substrate, Sapphire Substrate and the quartz substrate of silica including surface
In one kind.In the present embodiment, the dielectric substrate 101 has the silicon substrate of silica for surface, the substrate made by it
It is figure graphene substrate on insulator, on the one hand the oxide layer can prevent dissolving each other for germanium and silicon, on the other hand, form bottom
The substrate of layer silicon-insulating barrier-figure graphene-structured, more meets the demand of semiconductor fabrication process now.
As an example, using the method for magnetron sputtering in deposition germanium film 102 in the dielectric substrate 101.It is of course also possible to
The germanium film 102 is prepared using other methods, therefore, however it is not limited to example recited herein.
Due to subsequently needing by germanium film 102 described in evaporative removal, therefore, the thickness of the germanium film 102 should not be too big,
Simultaneously as germanium film 102 has more defect with the interface that dielectric substrate 101 is contacted, and with the thickness of germanium film 102
Increase shortcoming be gradually reduced, therefore, the thickness of the germanium film 102 also should not be too small.As an example, the germanium film of deposition
102 thickness range is 10~500nm.One more excellent thickness range is 50~100nm.
As shown in figure 4, then carrying out step 2) S12, needed for being etched in the germanium film 102 using lithographic etch process
Figure, forms figure germanium film 103.
As an example, the position that the germanium film 102 is etched is all to remove, until expose the dielectric substrate 101, with
When subsequent catalyst grows Graphene, any grapheme material will not be grown in dielectric substrate 101.
Specifically, including spin coating photoresist, litho pattern is prepared using photoetching process, and using such as ICP or RIE dry method
The step of etching technics etches germanium film 102.
As an example, the shape of the figure germanium film 103 can be strip that is multiple parallel and being separated by, multiple weeks being separated by
The rectangle of circular, multiple periodic arrangements being separated by of phase property arrangement, annular, circle, triangle and some institutes according to demand
Irregular figure etc. of definition, and be not limited to example recited herein, the size of the figure germanium film 103 can be from
Worked it out with electron beam exposure tens nanometers to the micron dimension worked it out with common photoetching, or even to being worked it out with mask plate
Macroscopic figure.
As shown in figures 5 and 6, step 3 is then carried out) S13, with the figure germanium film 103 as catalyst, gives birth at high temperature
Graphene long 104, meanwhile, the constantly evaporation at high temperature of figure germanium film 103, and be finally entirely removed, it is incorporated into
Figure Graphene 104 in dielectric substrate 101.
As an example, with gaseous carbon source as raw material, using chemical vapour deposition technique in the superficial growth stone of the figure germanium film 103
Black alkene 104.Further, the gaseous carbon source includes one or more the combination in methane, acetylene, ethene.
As an example, the temperature range of the high temperature is 850~937 DEG C.The determination of the temperature range according to being, first, be suitable to
Graphene 104 grows；Second, the evaporation of germanium material can be realized；3rd, it is impossible to which (fusing point of germanium is the temperature melted more than germanium
937℃).Preferably, it is 920 DEG C from temperature, superior in quality Graphene 104 can be obtained, and the germanium of fast speed steams
Hair.
As an example, the retention time of the high temperature is at least above the time that the figure germanium film 103 all evaporates, the height
The retention time scope of temperature is 30~300min.
Fig. 7 is shown as the optical photograph of the figure germanium film prepared by the present embodiment, and it is exhausted that Fig. 8 is shown as that the present embodiment obtained
The optical photograph (on 300nm silica/silicon substrate) of figure Graphene on edge body, Fig. 9 is shown as the present embodiment acquisition
Insulator on figure Graphene Raman spectrogram, Figure 10 be shown as the present embodiment acquisition insulator on figure Graphene drawing
Graceful spectrum 2D peak figures.Be can be seen that by the method for the present embodiment by Fig. 7~Figure 10, performance good insulating body can be obtained
Upper figure Graphene.
As described above, the method for preparing figure Graphene on an insulating substrate of the invention, has the advantages that：The present invention
By preparing germanium film on an insulating substrate, and after germanium film described in chemical wet etching forms required figure, catalytic growth Graphene,
And germanium film evaporative removal is obtained into figure Graphene on insulator while growth, not only overcome traditional handicraft use
Transfer method prepares such as pollution, the gauffer influence that Graphene on insulator is brought, while overcome using lithographic etch process
The pollution such as brought photoresist is performed etching to Graphene, the quality and performance of figure grapheme material on insulator is improve.
The figure Graphene being of high quality can be obtained using the method for the present invention.Step of the present invention is simple, effect is significant, in Graphene
Preparation field is with a wide range of applications.So, the present invention effectively overcomes various shortcoming of the prior art and has height and produce
Industry value.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any to be familiar with this skill
The personage of art all can carry out modifications and changes under without prejudice to spirit and scope of the invention to above-described embodiment.Therefore, such as
Those of ordinary skill in the art completed under without departing from disclosed spirit and technological thought all etc.
Effect modifications and changes, should be covered by claim of the invention.
Claims (10)
1. a kind of method for preparing figure Graphene on an insulating substrate, it is characterised in that methods described includes step：
Step 1), there is provided a dielectric substrate, in depositing germanium film in the dielectric substrate；
Step 2), required figure is etched in the germanium film using lithographic etch process, form figure germanium film；
Step 3), with the figure germanium film as catalyst, Graphene is grown at high temperature, meanwhile, figure germanium film exists
Constantly evaporated under high temperature, and be finally entirely removed, acquisition is incorporated into the figure Graphene in dielectric substrate.
2. the method for preparing figure Graphene on an insulating substrate according to claim 1, it is characterised in that：Step 1) in,
The dielectric substrate has the one kind in silicon substrate, Sapphire Substrate and the quartz substrate of silica including surface.
3. the method for preparing figure Graphene on an insulating substrate according to claim 1, it is characterised in that：Step 1) in,
Method using magnetron sputtering in the dielectric substrate in depositing germanium film.
4. the method for preparing figure Graphene on an insulating substrate according to claim 1, it is characterised in that：Step 1) in,
The thickness range of the germanium film of deposition is 10~500nm.
5. the method for preparing figure Graphene on an insulating substrate according to claim 1, it is characterised in that：Step 2) in,
The position that the germanium film is etched is all removals, until exposing the dielectric substrate.
6. the method for preparing figure Graphene on an insulating substrate according to claim 1, it is characterised in that：Step 3) in,
It is raw material in the germanium film superficial growth Graphene with gaseous carbon source.
7. the method for preparing figure Graphene on an insulating substrate according to claim 5, it is characterised in that：The gaseous carbon source
Including one or more the combination in methane, acetylene, ethene.
8. the method for preparing figure Graphene on an insulating substrate according to claim 1, it is characterised in that：Step 3) in,
Using chemical vapour deposition technique in the figure germanium film superficial growth Graphene.
9. the method for preparing figure Graphene on an insulating substrate according to claim 1, it is characterised in that：Step 3) in,
The temperature range of the high temperature is 850~937 DEG C.
10. the method for preparing figure Graphene on an insulating substrate according to claim 1, it is characterised in that：Step 3)
In, the retention time of the high temperature is at least above the time that the figure germanium film all evaporates, the retention time of the high temperature
Scope is 30~300min.
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| CN201510952653.4A CN106904599B (en) | 2015-12-17 | 2015-12-17 | A method of preparing figure graphene on an insulating substrate |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109055896A (en) * | 2018-07-20 | 2018-12-21 | 中国科学院上海微***与信息技术研究所 | A method of directly preparing graphene on an insulating substrate |
| WO2020038103A1 (en) * | 2018-08-24 | 2020-02-27 | 北京石墨烯研究院 | Nano patterned sapphire substrate with graphene, preparation method therefor and use thereof, graphene ultraviolet led and preparation method therefor |
| CN111441032A (en) * | 2020-05-22 | 2020-07-24 | 青岛峰峦新材料科技有限责任公司 | SERS substrate based on graphene quantum dot array and preparation method thereof |
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| CN102557017A (en) * | 2010-12-07 | 2012-07-11 | 三星电子株式会社 | Graphene structure and method of fabricating the same |
| CN105060286A (en) * | 2015-08-26 | 2015-11-18 | 中国科学院上海微***与信息技术研究所 | Preparation method of corrugated graphene |
| CN105129785A (en) * | 2015-08-26 | 2015-12-09 | 中国科学院上海微***与信息技术研究所 | Preparation method of graphene on insulator |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102557017A (en) * | 2010-12-07 | 2012-07-11 | 三星电子株式会社 | Graphene structure and method of fabricating the same |
| CN105060286A (en) * | 2015-08-26 | 2015-11-18 | 中国科学院上海微***与信息技术研究所 | Preparation method of corrugated graphene |
| CN105129785A (en) * | 2015-08-26 | 2015-12-09 | 中国科学院上海微***与信息技术研究所 | Preparation method of graphene on insulator |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109055896A (en) * | 2018-07-20 | 2018-12-21 | 中国科学院上海微***与信息技术研究所 | A method of directly preparing graphene on an insulating substrate |
| WO2020038103A1 (en) * | 2018-08-24 | 2020-02-27 | 北京石墨烯研究院 | Nano patterned sapphire substrate with graphene, preparation method therefor and use thereof, graphene ultraviolet led and preparation method therefor |
| CN111441032A (en) * | 2020-05-22 | 2020-07-24 | 青岛峰峦新材料科技有限责任公司 | SERS substrate based on graphene quantum dot array and preparation method thereof |
| CN111441032B (en) * | 2020-05-22 | 2021-11-09 | 珠海海艺新材料科技有限公司 | SERS substrate based on graphene quantum dot array and preparation method thereof |
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