CN106904565B - A kind of MEMS device and preparation method thereof, electronic device - Google Patents
A kind of MEMS device and preparation method thereof, electronic device Download PDFInfo
- Publication number
- CN106904565B CN106904565B CN201510974153.0A CN201510974153A CN106904565B CN 106904565 B CN106904565 B CN 106904565B CN 201510974153 A CN201510974153 A CN 201510974153A CN 106904565 B CN106904565 B CN 106904565B
- Authority
- CN
- China
- Prior art keywords
- arm
- material layer
- substrate
- sacrificial material
- master console
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
Abstract
The present invention relates to a kind of MEMS device and preparation method thereof, electronic device.The method includes the steps S1: providing substrate, is formed with sacrificial material layer on the substrate, the first groove extended in the substrate is formed in the sacrificial material layer；Step S2: master console arm material layer is formed in the sacrificial material layer and the first groove and is patterned, to form master console arm；Step S3: continuing to deposit the sacrificial material layer, to cover the master console arm；Step S4: patterning the sacrificial material layer and the substrate, to form second groove in the side of the first groove；Step S5: secondary overarm arm is formed in the sacrificial material layer and in the second groove, to cover the sacrificial material layer；Step S6: removing the sacrificial material layer, to form cavity.In MEMS device of the present invention when secondary overarm arm generates overload, the design of master console arm can suitably play buffering and supporting role, and secondary overarm arm roots is protected to prevent from being broken.
Description
Technical field
The present invention relates to semiconductor fields, in particular it relates to which a kind of MEMS device and preparation method thereof, electronics fill
It sets.
Background technique
With the continuous development of semiconductor technology, sensor (motion sensor) class product in the market, intelligent hand
Machine, integrated CMOS and MEMS (MEMS) device have become most mainstream, state-of-the-art technology, and more with technology
Newly, the developing direction of this kind of transmission sensors product is the smaller size of scale, the electric property of high quality and lower loss.
Wherein, microelectromechanical systems (MEMS) is in volume, power consumption, weight and in price with fairly obvious excellent
Gesture, has developed a variety of different sensors so far, for example, pressure sensor, acceleration transducer, inertial sensor and
Other sensors.
In MEMS micro mechanical structure, overarm arm configuration is using a kind of quite extensive structure, above and below overarm arm
Vibration, leads to the variation of space capacitor, so as to cause the variation of signal, achievees the purpose that structure designs, so for material
Stress coefficient and coefficient of elasticity just become especially sensitive and important.
It is directed to overarm arm configuration at present, there is also an intrinsic problem, arm lengths of exactly hanging oneself from a beam are significantly larger than beam and cut
Area is high, wide size, if in addition increasing mass block, can all cause overarm arm degree of disturbing to increase, there are the wind of overarm arm fracture of root
Danger.Additionally due to micro-structure, frequently with monocrystalline silicon, polysilicon, the fragile materials such as germanium silicon are made, acted in impact or oscillating load
Under, when stress is more than the strength degree of material, it is also possible to fracture failure occur.
Wherein, the production of overarm arm is generally used the mode of integral type, discharges structure by removal expendable material, reaches
To production purpose, but the method also due to integral type there are the risks of overarm arm fracture of root.
Therefore it needs to be improved further the preparation method of current MEMS device, to eliminate above-mentioned various drawbacks.
Summary of the invention
A series of concept of reduced forms is introduced in Summary, this will in the detailed description section into
One step is described in detail.Summary of the invention is not meant to attempt to limit technical solution claimed
Key feature and essential features do not mean that the protection scope for attempting to determine technical solution claimed more.
The present invention is in order to overcome the problems, such as that presently, there are provide a kind of MEMS device, comprising:
Substrate；
Secondary overarm arm, the cantilever of the pair overarm arm are located at the top of the substrate, and the root of the pair overarm arm is embedded in
In the substrate；
Cavity, between the cantilever and the substrate of the secondary overarm arm；
Master console arm, in the cavity, the root of the master console arm is embedded in described for the cantilever position of the master console arm
In the substrate below cavity.
Optionally, separation layer is formed between the side wall and the substrate of the secondary overarm arm roots.
Optionally, the size of the secondary overarm arm is greater than the size of the master console arm.
Optionally, the extending direction phase of the extending direction and the cantilever of the master console arm of the cantilever of the secondary overarm arm
Instead.
The present invention also provides a kind of preparation methods of MEMS device, comprising:
Step S1: substrate is provided, sacrificial material layer is formed on the substrate, is formed in the sacrificial material layer
Extend to the first groove in the substrate；
Step S2: forming master console arm material layer and patterned in the sacrificial material layer and the first groove, with
Form master console arm；
Step S3: continuing to deposit the sacrificial material layer, to cover the master console arm；
Step S4: patterning the sacrificial material layer and the substrate, to form second in the side of the first groove
Groove；
Step S5: secondary overarm arm is formed in the sacrificial material layer and in the second groove, to cover the sacrifice
Material layer；
Step S6: removing the sacrificial material layer, to form cavity between the substrate and the secondary overarm arm.
Optionally, the step S1 includes:
Step S11: substrate is provided and forms the sacrificial material layer on the substrate；
Step S12: the mask layer with opening is formed, in the sacrificial material layer to define etching area；
Step S13: using the mask layer as sacrificial material layer described in mask etch and the substrate, in the substrate
Form the first groove；
Step S14: the mask layer is removed.
Optionally, it may further include the second groove after forming the second groove in the step S4
Side wall on formed separation layer the step of.
Optionally, the step S4 includes:
Step S41: spacer material layer is formed in the side wall of the second groove, bottom and the sacrificial material layer；
Step S42: removing the spacer material layer in the second groove bottom and the sacrificial material layer, with
The separation layer is formed on the side wall of the second groove.
Optionally, the extending direction phase of the extending direction and the cantilever of the master console arm of the cantilever of the secondary overarm arm
Instead.
Optionally, the size of the secondary overarm arm is greater than the size of the master console arm.
The present invention also provides a kind of electronic devices, including above-mentioned MEMS device.
In order to solve the problems in the existing technology the present invention, provides a kind of MEMS device and preparation method thereof, lead to
It crosses from traditional single overarm arm configuration, designs the composite structure of overarm arm in pairs, buffering and support overarm arm roots, play
Protective effect reduces risk of breakage, improves the service life of MEMS device overarm arm.
In the present invention by new design scheme, overarm arm is designed into double overarm arm composite structures, secondary overarm arm size
Much larger than master console arm, so secondary overarm arm spatial variations will not be produced bigger effect.When secondary overarm arm generates overload, deformation
When serious, pair overarm arm roots generate biggish torque and deform, and the design of master console arm, can suitably play buffering and support
Effect protects secondary overarm arm roots to prevent from being broken.
Detailed description of the invention
Following drawings of the invention is incorporated herein as part of the present invention for the purpose of understanding the present invention.Shown in the drawings of this hair
Bright embodiment and its description, device used to explain the present invention and principle.In the accompanying drawings,
Fig. 1 is the preparation process schematic diagram of MEMS device described in the embodiment of the invention；
Fig. 2 is the preparation process schematic diagram of MEMS device described in the embodiment of the invention；
Fig. 3 is the preparation process schematic diagram of MEMS device described in the embodiment of the invention；
Fig. 4 is the preparation process schematic diagram of MEMS device described in the embodiment of the invention；
Fig. 5 is the preparation process schematic diagram of MEMS device described in the embodiment of the invention；
Fig. 6 is the preparation process schematic diagram of MEMS device described in the embodiment of the invention；
Fig. 7 is the preparation process schematic diagram of MEMS device described in the embodiment of the invention；
Fig. 8 is the preparation process schematic diagram of MEMS device described in the embodiment of the invention；
Fig. 9 is the preparation process schematic diagram of MEMS device described in the embodiment of the invention；
Figure 10 is the preparation process schematic diagram of MEMS device described in the embodiment of the invention；
Figure 11 is the preparation process schematic diagram of MEMS device described in the embodiment of the invention；
Figure 12 is the preparation process schematic diagram of MEMS device described in the embodiment of the invention；
Figure 13 is the preparation process schematic diagram of MEMS device described in the embodiment of the invention；
Figure 14 is the preparation process schematic diagram of MEMS device described in the embodiment of the invention；
Figure 15 is the preparation process schematic diagram of MEMS device described in the embodiment of the invention；
Figure 16 is the preparation technology flow chart of MEMS device described in the embodiment of the invention.
Specific embodiment
In the following description, a large amount of concrete details are given so as to provide a more thorough understanding of the present invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid confusion with the present invention, for some technical characteristics well known in the art not into
Row description.
It should be understood that the present invention can be implemented in different forms, and should not be construed as being limited to propose here
Embodiment.On the contrary, provide these embodiments will make it is open thoroughly and completely, and will fully convey the scope of the invention to
Those skilled in the art.In the accompanying drawings, for clarity, the size and relative size in the area Ceng He may be exaggerated.From beginning to end
Same reference numerals indicate identical element.
It should be understood that when element or layer be referred to " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then there is no elements or layer between two parties.It should be understood that although can make
Various component, assembly units, area, floor and/or part are described with term first, second, third, etc., these component, assembly units, area, floor and/
Or part should not be limited by these terms.These terms be used merely to distinguish a component, assembly unit, area, floor or part with it is another
One component, assembly unit, area, floor or part.Therefore, do not depart from present invention teach that under, first element discussed below, portion
Part, area, floor or part are represented by second element, component, area, floor or part.
Spatial relation term for example " ... under ", " ... below ", " below ", " ... under ", " ... it
On ", " above " etc., herein can for convenience description and being used describe an elements or features shown in figure with
The relationship of other elements or features.It should be understood that spatial relation term intention further includes making other than orientation shown in figure
With the different orientation with the device in operation.For example, then, being described as " under other elements if the device in attached drawing is overturn
Face " or " under it " or " under it " elements or features will be oriented in other elements or features "upper".Therefore, exemplary art
Language " ... below " and " ... under " it may include upper and lower two orientations.Device can additionally be orientated (be rotated by 90 ° or its
It is orientated) and spatial description language as used herein correspondingly explained.
The purpose of term as used herein is only that description specific embodiment and not as limitation of the invention.Make herein
Used time, " one " of singular, "one" and " described/should " be also intended to include plural form, unless the context clearly indicates separately
Outer mode.It is also to be understood that term " composition " and/or " comprising ", when being used in this specification, determines the feature, whole
The presence of number, step, operations, elements, and/or components, but be not excluded for one or more other features, integer, step, operation,
The presence or addition of component, assembly unit and/or group.Herein in use, term "and/or" includes any of related listed item and institute
There is combination.
In order to thoroughly understand the present invention, detailed step and detailed structure will be proposed in following description, so as to
Illustrate technical solution of the present invention.Presently preferred embodiments of the present invention is described in detail as follows, however other than these detailed descriptions, this
Invention can also have other embodiments.
Embodiment one
In order to solve the problems in the existing technology, the present invention provides a kind of preparation method of MEMS device, below
The method is described further in conjunction with attached drawing 1-16, wherein Fig. 1-15 is described in the embodiment of the invention
The preparation process schematic diagram of MEMS device；Figure 16 is the preparation process stream of MEMS device described in the embodiment of the invention
Cheng Tu.
Firstly, executing step 101, substrate 101 is provided, is formed with sacrificial material layer on the substrate, in the sacrifice
The first groove extended in the substrate 101 is formed in material layer 102.
Specifically, the depth of the first groove is not limited to a certain numberical range, can be according to the ruler of master console arm
The selection of little progress row.
Optionally, the step 101 includes following sub-step:
Step 1011: substrate 101 being provided and forms the sacrificial material layer 102 on the substrate；
Specifically, as shown in Figure 1, wherein the substrate 101 can be semiconductor substrate, described in this step partly to lead
Body substrate can be following at least one of the material being previously mentioned: silicon is laminated on insulator in silicon, silicon-on-insulator (SOI)
(SSOI), SiGe (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator are laminated on insulator
(GeOI) etc..
Semiconductor substrate selects silicon in this embodiment.
Then cmos device and various MEMS elements can be formed in the substrate 101, wherein the MEMS element
Refer to necessary various components in the MMES sensor.
Wherein, the sacrificial material layer 102 can select semiconductor material layer or oxide, nitride etc., not office
It is limited to a certain kind.
The sacrificial material layer 102 can select semiconductor material layer in this embodiment, such as can select Ge.
Wherein, the thickness of sacrificial material layer 102 described in the embodiment is not limited to a certain numberical range, can basis
The size of master console arm is selected.
Step 1012: the mask layer with opening is formed in the sacrificial material layer 102, as shown in Fig. 2, to define erosion
Carve region；
Wherein, the mask layer can select photoresist layer, and be exposed development to the photoresist, described in being formed
Opening.
Step 1013: using the mask layer as sacrificial material layer 102 described in mask etch and the substrate, in the base
The first groove is formed in bottom, as shown in Figure 3；
Specifically, wherein selecting dry etching to form the groove in this step, preferably, selecting gas etch
The groove is formed, etching gas can be selected according to the difference of selected materials in the present invention, such as in the present invention
It can choose CF4、CO2、O2、N2One or more of, the etching pressure can be 20-300mTorr, preferably 50-
150mTorr, power 200-600W.
Step 1014: removing the mask layer, as shown in Figure 4.
Step 102 is executed, form master console arm material layer 103 in the sacrificial material layer and the first groove and is schemed
Case, to form master console arm 1031.
Specifically, the method for forming master console arm 1031 may comprise steps of:
Step 1021: forming master console arm material layer 103, in the sacrificial material layer and the first groove with covering
The sacrificial material layer simultaneously fills the first groove, as shown in Figure 5.
Wherein, master console arm material layer can select semiconductor material layer or various metal material layers, in this embodiment
Master console arm material layer can select semiconductor material layer, such as polysilicon.
Wherein, the deposition of the master console arm material layer can select chemical vapor deposition (CVD) method, physical vapour deposition (PVD)
(PVD) low-pressure chemical vapor deposition (LPCVD) of the formation such as method or atomic layer deposition (ALD) method, laser ablation deposition (LAD) with
And one of selective epitaxy growth (SEG).
Step 1021: patterned mask layer is formed in the master console arm material layer, as shown in fig. 6, to define erosion
Carve region；
Wherein, the mask layer can select photoresist layer, and be exposed development to the photoresist, to define etching
Region.
Step 1022: using the mask layer as master console arm material layer described in mask etch, to form master console arm 1031,
As shown in Figure 7.
Step 1023: removing the mask layer, as shown in Figure 8.
Step 103 is executed, continues to deposit the sacrificial material layer 102, the master console arm 1031 is completely covered.
Specifically, as shown in figure 9, the sacrificial material layer 102 can select semiconductor material layer or oxide, nitridation
Object etc., it is not limited to a certain.
The sacrificial material layer 102 can select semiconductor material layer in this embodiment, such as can select Ge.
Wherein, the thickness of sacrificial material layer 102 described in the embodiment is not limited to a certain numberical range, can be complete
Cover the master console arm 1031.
The deposition of sacrificial material layer 102 described in the embodiment can select chemical vapor deposition (CVD) method, physical vapor
Deposit low-pressure chemical vapor deposition (LPCVD), the laser ablation deposition of the formation such as (PVD) method or atomic layer deposition (ALD) method
(LAD) and selective epitaxy grows one of (SEG).
Step 104 is executed, the sacrificial material layer 102 and the substrate 101 are patterned, the one of the first groove
Side forms second groove.
Specifically, the sacrificial material layer 102 and the substrate 101 are patterned, in the side shape of the first groove
Include: at the method for second groove
Step 1041: patterned mask layer is formed in the sacrificial material layer 102, as shown in Figure 10, to define erosion
Carve region；
Wherein, the mask layer can select photoresist layer, and be exposed development to the photoresist, to define etching
Region.
Step 1042: using the mask layer as sacrificial material layer 102 described in mask etch and the substrate 101, in institute
The side for stating first groove forms second groove, as shown in figure 11.
Step 1043: removing the mask layer, as shown in figure 12.
Optionally, it may further include second ditch after forming the second groove in the step 1043
The step of separation layer is formed on the side wall of slot, comprising:
Step 1044: spacer material layer is formed in the side wall of the second groove, bottom and the sacrificial material layer,
As shown in figure 12；
Wherein, the spacer material layer can select insulating materials commonly used in the art, it is not limited to a certain.
Step 1045: the spacer material layer in the second groove bottom and the sacrificial material layer is removed, with
The separation layer is formed on the side wall of the second groove, as shown in figure 13.
Wherein, method commonly used in the art can be selected by removing the spacer material layer, it is not limited to a certain.
Step 105 is executed, secondary overarm arm 105 is formed in the sacrificial material layer and in the second groove, with covering
The sacrificial material layer 102.
Specifically, secondary overarm arm 105 is formed, in the sacrificial material layer and the second groove to cover the sacrifice
Material layer simultaneously fills the second groove, as shown in figure 14.
Wherein, secondary overarm arm can select semiconductor material layer or various metal material layers, in this embodiment secondary overarm
Arm can select semiconductor material layer, such as polysilicon.
Wherein, the deposition of the secondary overarm arm can select chemical vapor deposition (CVD) method, physical vapour deposition (PVD) (PVD)
Low-pressure chemical vapor deposition (LPCVD), laser ablation deposition (LAD) and the choosing of the formation such as method or atomic layer deposition (ALD) method
Select one of epitaxial growth (SEG).
Optionally, the extension of the cantilever of the extending direction and master console arm 1031 of the cantilever of the secondary overarm arm 105
It is contrary.
Optionally, the size of the secondary overarm arm 105 is greater than the size of the master console arm 1031, specifically, the pair
The jib-length and width of overarm arm 105 are all larger than the jib-length and width of the master console arm 1031, the pair overarm arm
105 root depth and width is all larger than the root depth and width of the master console arm 1031.
In the present invention by designing the composite structure of overarm arm in pairs from traditional single overarm arm configuration, pair is outstanding
Beam arm size is much larger than master console arm, so secondary overarm arm spatial variations will not be produced bigger effect.When secondary overarm arm generates
Overload, when deforming serious, pair overarm arm roots generate biggish torque and deform, and the design of master console arm, can suitably play
Buffering and supporting role protect secondary overarm arm roots to prevent from being broken, improve the service life of MEMS device overarm arm.
Execute step 106, remove the sacrificial material layer 102, with the substrate 101 and the secondary overarm arm 105 it
Between form cavity.
Specifically, as shown in figure 15, select CLK888 as etching solution, the CLK888 etching solution conduct in this step
Scavenger, main component are alkyl ammonium hydroxide and solvent, and the CLK888 is commercial product, in the market sold CLK888
Etching solution can be applied to the present invention, it is not limited to which a certain brand, those skilled in the art, which can according to need, to be selected
It selects.
Preferably, strict control etch temperature is needed in order to preferably etch the sacrificial material layer, preferably,
The etch temperature is 60-90 DEG C, and more preferably 70-80 DEG C, etching period is not limited to a certain range.
So far, the introduction of the correlation step of the MEMS device preparation of the embodiment of the present invention is completed.After the above step,
It can also include other correlation steps, details are not described herein again.Also, in addition to the foregoing steps, the preparation method of the present embodiment
It can also include other steps among above-mentioned each step or between different steps, these steps can pass through existing skill
Various techniques in art realize that details are not described herein again.
In order to solve the problems in the existing technology the present invention, provides a kind of MEMS device and preparation method thereof, lead to
It crosses from traditional single overarm arm configuration, designs the composite structure of overarm arm in pairs, buffering and support overarm arm roots, play
Protective effect reduces risk of breakage, improves the service life of MEMS device overarm arm.
In the present invention by new design scheme, overarm arm is designed into double overarm arm composite structures, master console arm size
Much larger than secondary overarm arm, so secondary overarm arm spatial variations will not be produced bigger effect.When secondary overarm arm generates overload, deformation
When serious, pair overarm arm roots generate biggish torque and deform, and the design of master console arm, can suitably play buffering and support
Effect protects secondary overarm arm roots to prevent from being broken.
Figure 16 is the preparation technology flow chart of MEMS device described in the embodiment of the invention, is specifically included following
Step:
Step S1: substrate is provided, sacrificial material layer is formed on the substrate, is formed in the sacrificial material layer
Extend to the first groove in the substrate；
Step S2: forming master console arm material layer and patterned in the sacrificial material layer and the first groove, with
Form master console arm；
Step S3: continuing to deposit the sacrificial material layer, to cover the master console arm；
Step S4: patterning the sacrificial material layer and the substrate, to form second in the side of the first groove
Groove；
Step S5: secondary overarm arm is formed in the sacrificial material layer and in the second groove, to cover the sacrifice
Material layer；
Step S6: removing the sacrificial material layer, to form cavity between the substrate and the secondary overarm arm.
Embodiment two
The present invention also provides a kind of MEMS device, the MEMS device is prepared by the method in embodiment 1
It arrives, the device includes:
Substrate 101；
Secondary overarm arm 105, the cantilever of the pair overarm arm 105 are located at 101 top of substrate, the pair overarm arm 105
Root be located in the substrate 101；
Cavity, between the cantilever and the substrate of the secondary overarm arm 105；
Master console arm 1031, the master console arm are located at the sky between the substrate and the cantilever of the secondary overarm arm 105
In chamber, the cantilever of the master console arm 1031 is located between the substrate and the cantilever of the secondary overarm arm 105, the master console
The root of arm is in the substrate.
Optionally, separation layer 104 is formed between the side wall and the substrate of 105 root of the secondary overarm arm.
Optionally, the size of the secondary overarm arm 105 is greater than the size of the master console arm 1031.Specifically, the pair
The jib-length and width of overarm arm 105 are all larger than the jib-length and width of the master console arm 1031, the pair overarm arm
105 root depth and width is all larger than the root depth and width of the master console arm 1031.
Optionally, the extension of the cantilever of the extending direction and master console arm 1031 of the cantilever of the secondary overarm arm 105
It is contrary.
Wherein, the substrate 101 can be semiconductor substrate, and the semiconductor substrate can be following institute in this step
At least one of material mentioned: silicon (SSOI) is laminated on insulator, germanium is laminated on insulator for silicon, silicon-on-insulator (SOI)
SiClx (S-SiGeOI), germanium on insulator SiClx (SiGeOI) and germanium on insulator (GeOI) etc..
Semiconductor substrate selects silicon in this embodiment.
Then cmos device and various MEMS elements can be formed in the substrate 101, wherein the MEMS element
Refer to necessary various components in the MMES sensor.
Wherein, master console arm can select semiconductor material layer or various metal material layers, in this embodiment master console
Arm can select semiconductor material layer, such as polysilicon.
Wherein, secondary overarm arm can select semiconductor material layer or various metal material layers, in this embodiment secondary overarm
Arm can select semiconductor material layer, such as polysilicon.
Wherein, the deposition of the secondary overarm arm can select chemical vapor deposition (CVD) method, physical vapour deposition (PVD) (PVD)
Low-pressure chemical vapor deposition (LPCVD), laser ablation deposition (LAD) and the choosing of the formation such as method or atomic layer deposition (ALD) method
Select one of epitaxial growth (SEG).
In order to solve the problems in the existing technology the present invention, provides a kind of MEMS device and preparation method thereof, lead to
It crosses from traditional single overarm arm configuration, designs the composite structure of overarm arm in pairs, buffering and support overarm arm roots, play
Protective effect reduces risk of breakage, improves the service life of MEMS device overarm arm.
In the present invention by new design scheme, overarm arm is designed into double overarm arm composite structures, master console arm size
Much smaller than secondary overarm arm, so secondary overarm arm spatial variations will not be produced bigger effect.When secondary overarm arm generates overload, deformation
When serious, pair overarm arm roots generate biggish torque and deform, and the design of master console arm, can suitably play buffering and support
Effect protects secondary overarm arm roots to prevent from being broken.
Embodiment three
The present invention also provides a kind of electronic devices, including MEMS device described in embodiment two.Wherein, semiconductor devices
For MEMS device described in embodiment two, or the MEMS device that the preparation method according to embodiment one obtains.
The electronic device of the present embodiment can be mobile phone, tablet computer, laptop, net book, game machine, TV
Any electronic product such as machine, VCD, DVD, navigator, camera, video camera, recording pen, MP3, MP4, PSP or equipment can also be
Any intermediate products including the MEMS device.The electronic device of the embodiment of the present invention, due to having used above-mentioned MEMS device
Part, thus there is better performance.
The present invention has been explained by the above embodiments, but it is to be understood that, above-described embodiment is only intended to
The purpose of citing and explanation, is not intended to limit the invention to the scope of the described embodiments.Furthermore those skilled in the art
It is understood that the present invention is not limited to the above embodiments, introduction according to the present invention can also be made more kinds of member
Variants and modifications, all fall within the scope of the claimed invention for these variants and modifications.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (11)
1. a kind of MEMS device, comprising:
Substrate；
Secondary overarm arm, the cantilever of the pair overarm arm are located at the top of the substrate, and the root of the pair overarm arm is embedded in described
In substrate；
Cavity, the cavity are located between the cantilever and the substrate of the secondary overarm arm；
Master console arm, in the cavity, the root of the master console arm is embedded in the cavity for the cantilever position of the master console arm
In the substrate of lower section, the master console arm is used to delay the secondary overarm arm when the secondary overarm arm generates overload
Punching and support.
2. MEMS device according to claim 1, which is characterized in that the side wall of the secondary overarm arm roots and the substrate
Between be formed with separation layer.
3. MEMS device according to claim 1, which is characterized in that the jib-length of the pair overarm arm is greater than the master
The jib-length of overarm arm, the boom width of the pair overarm arm are greater than the boom width of the master console arm, the secondary overarm
The root depth of arm is greater than the root depth of the master console arm, and the root width of the pair overarm arm is greater than the master console arm
Root width.
4. MEMS device according to claim 1, which is characterized in that the extending direction of the cantilever of the pair overarm arm and institute
The extending direction for stating the cantilever of master console arm is opposite.
5. a kind of preparation method of MEMS device, comprising:
Step S1: substrate is provided, sacrificial material layer is formed on the substrate, extension is formed in the sacrificial material layer
To the first groove in the substrate；
Step S2: master console arm material layer is formed in the sacrificial material layer and the first groove and is patterned, to be formed
Master console arm；
Step S3: continuing to deposit the sacrificial material layer, to cover the master console arm；
Step S4: patterning the sacrificial material layer and the substrate, to form second groove in the side of the first groove；
Step S5: secondary overarm arm is formed in the sacrificial material layer and in the second groove, to cover the expendable material
Layer, the master console arm are used to that the secondary overarm arm to be buffered and be supported when the secondary overarm arm generates overload；
Step S6: removing the sacrificial material layer, to form cavity between the substrate and the secondary overarm arm.
6. according to the method described in claim 5, it is characterized in that, the step S1 includes:
Step S11: substrate is provided and forms the sacrificial material layer on the substrate；
Step S12: the mask layer with opening is formed, in the sacrificial material layer to define etching area；
Step S13: using the mask layer as sacrificial material layer described in mask etch and the substrate, to be formed in the substrate
The first groove；
Step S14: the mask layer is removed.
7. according to the method described in claim 5, it is characterized in that, in the step S4 after forming the second groove
It may further include the step of separation layer is formed on the side wall of the second groove.
8. the method according to the description of claim 7 is characterized in that the step S4 includes:
Step S41: spacer material layer is formed in the side wall of the second groove, bottom and the sacrificial material layer；
Step S42: the spacer material layer in the second groove bottom and the sacrificial material layer is removed, described
The separation layer is formed on the side wall of second groove.
9. according to the method described in claim 5, it is characterized in that, extending direction and the master of the cantilever of the pair overarm arm
The extending direction of the cantilever of overarm arm is opposite.
10. according to the method described in claim 5, it is characterized in that, the jib-length of the pair overarm arm is outstanding greater than the master
The jib-length of beam arm, the boom width of the pair overarm arm are greater than the boom width of the master console arm, the pair overarm arm
Root depth be greater than the root depth of the master console arm, the root width of the pair overarm arm is greater than the master console arm
Root width.
11. a kind of electronic device, including MEMS device described in one of Claims 1-4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510974153.0A CN106904565B (en) | 2015-12-22 | 2015-12-22 | A kind of MEMS device and preparation method thereof, electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510974153.0A CN106904565B (en) | 2015-12-22 | 2015-12-22 | A kind of MEMS device and preparation method thereof, electronic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106904565A CN106904565A (en) | 2017-06-30 |
| CN106904565B true CN106904565B (en) | 2019-06-28 |
Family
ID=59200076
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510974153.0A Active CN106904565B (en) | 2015-12-22 | 2015-12-22 | A kind of MEMS device and preparation method thereof, electronic device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106904565B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6127812A (en) * | 1999-02-16 | 2000-10-03 | General Electric Company | Integrated environmental energy extractor |
| CN1656643A (en) * | 2002-04-26 | 2005-08-17 | 摩托罗拉公司 | Micro electro-mechanical system method |
| CN102906011A (en) * | 2010-06-25 | 2013-01-30 | 国际商业机器公司 | Micro-electro-mechanical system structures |
| CN103258686A (en) * | 2013-05-20 | 2013-08-21 | 东南大学 | Temperature protection device based on micromechanical cantilever beam structure |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7444812B2 (en) * | 2005-01-27 | 2008-11-04 | Scott Ryan Kirkpatirck | Shape memory alloy MEMS heat engine |
| JP2006328955A (en) * | 2005-05-23 | 2006-12-07 | Sony Corp | Energy conversion element and electrostatic driving element equipped with the same, and electronic equipment |
-
2015
- 2015-12-22 CN CN201510974153.0A patent/CN106904565B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6127812A (en) * | 1999-02-16 | 2000-10-03 | General Electric Company | Integrated environmental energy extractor |
| CN1656643A (en) * | 2002-04-26 | 2005-08-17 | 摩托罗拉公司 | Micro electro-mechanical system method |
| CN102906011A (en) * | 2010-06-25 | 2013-01-30 | 国际商业机器公司 | Micro-electro-mechanical system structures |
| CN103258686A (en) * | 2013-05-20 | 2013-08-21 | 东南大学 | Temperature protection device based on micromechanical cantilever beam structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106904565A (en) | 2017-06-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107285273B (en) | Systems and methods for comb drive MEMS devices | |
| EP2470467B1 (en) | Mems device with stress isolation and method of fabrication | |
| JP5602761B2 (en) | Micro-electromechanical system device having separated microstructure and manufacturing method thereof | |
| EP2489629B1 (en) | Mems device having variable gap width and method of manufacture | |
| TW200540102A (en) | Single crystal silicon sensor with additional layer and method of producing the same | |
| US9446940B2 (en) | Stress isolation for MEMS device | |
| US20080050845A1 (en) | Microelectromechanical systems encapsulation process | |
| JP5718253B2 (en) | Method of forming a device having a piezoresistor and an accelerometer | |
| US8704317B2 (en) | Microstructure device with an improved anchor | |
| US20130319117A1 (en) | Mems sensor with stress isolation and method of fabrication | |
| US11277112B2 (en) | Micro-electro-mechanical device with reduced temperature sensitivity and manufacturing method thereof | |
| US20100320548A1 (en) | Silicon-Rich Nitride Etch Stop Layer for Vapor HF Etching in MEMS Device Fabrication | |
| CN105197871B (en) | MEMS device and its manufacturing method | |
| CN110282595A (en) | Micro mechanical structure | |
| CN106904565B (en) | A kind of MEMS device and preparation method thereof, electronic device | |
| JP2021091082A (en) | Density-increased mems element | |
| CN106241729A (en) | CMOS-MEMS integrating device and manufacture method including contact layer | |
| CN108341395B (en) | Manufacturing method of MEMS device | |
| CN105635926B (en) | A kind of MEMS microphone and preparation method thereof, electronic device | |
| EP2435357B1 (en) | Method of accurately spacing z-axis electrode | |
| US10246325B2 (en) | MEMS device and method for manufacturing a MEMS device | |
| US8936960B1 (en) | Method for fabricating an integrated device | |
| CN106153982B (en) | A kind of MEMS acceleration transducer and preparation method thereof | |
| Assaderaghi | SOI and Engineered-SOI, ideal platforms for building MEMS | |
| Rodriguez et al. | Single Wafer Encapsulation of MEMS Resonators |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |