CN106899292B - Phase-locked loop circuit based on spin oscillator - Google Patents
Phase-locked loop circuit based on spin oscillator Download PDFInfo
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- CN106899292B CN106899292B CN201510964693.0A CN201510964693A CN106899292B CN 106899292 B CN106899292 B CN 106899292B CN 201510964693 A CN201510964693 A CN 201510964693A CN 106899292 B CN106899292 B CN 106899292B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
Abstract
The invention relates to a phase-locked loop circuit based on a spin oscillator, which comprises a phase discriminator, a low-pass filter and the spin oscillator. The self-rotating oscillator generates an oscillation signal when a control signal is applied, the oscillation signal is output through the output end of the phase-locked loop circuit, and the oscillation signal is fed back to the phase discriminator through a feedback loop which is connected with the output end of the phase-locked loop circuit and the phase discriminator. The spin oscillator may include a spin injection layer that generates a spin-polarized current output upon receiving a non-spin-polarized current input, and a magnetic precession layer disposed on the spin injection layer, the magnetic precession layer being formed of a magnetic conductive material, receiving a spin-polarized current from the spin injection layer, and precessing a magnetic moment of the magnetic precession layer in response to the spin-polarized current to generate the oscillation signal.
Description
Technical Field
The present invention relates generally to electronic circuits, and more particularly to a spin oscillator based phase locked loop circuit and an electronic circuit including the phase locked loop circuit.
Background
A Phase Locked Loop (PLL) is a commonly used electronic component and is widely used in various electronic circuits and systems. Fig. 1 illustrates a typical phase locked loop 100 that includes a phase detector 110, a low pass filter 120, and a voltage controlled oscillator 130.
The phase detector 110 receives an input signal ui(t) having a frequency ωiAnd also receives an output signal u fed back from the output of the phase locked loop 100o(t) having a frequency ωo. The phase detector 110 detects a phase difference between the two signals and converts the detected phase difference signal into a voltage signal uDAnd (t) outputting. It should be noted that the voltage signal u output by the phase detector 110D(t) comprises the sum (i.e. high) and difference (i.e. low) frequency terms of its two input signals, the voltage signal uD(t) filtering the signal by the low pass filter 120 to remove the high frequency term therein to obtain the control voltage u for controlling the voltage controlled oscillator 130C(t) of (d). Oscillation frequency ω of voltage controlled oscillator 130oCan be carried alongControl voltage uC(t) is varied. Thus, after the "frequency pulling" process, the frequency ω of the output signal of the phase locked loop 100oWith the frequency omega of the input signaliAnd the phase difference is a stable value, the pll 100 enters a "phase locked" state.
Such a phase locked loop 100 also has some disadvantages. The voltage-controlled oscillators currently used generally include an LC oscillation type and a crystal oscillation type. Both the inductor L and the capacitor C in the LC oscillator have difficulty in miniaturization, which is disadvantageous for integration. Even in current lsi chips, in order to realize a large inductance value and a large capacitance value, an external inductor and a capacitor are generally used, and cannot be directly integrated into a chip. Crystal oscillators also present difficulties in miniaturization. Therefore, the current phase-locked loop has not been able to meet the requirements of the integrated circuit development. On the other hand, the output frequencies of the existing LC oscillator and crystal oscillator are relatively low, and the requirements of a high-frequency circuit cannot be met. Moreover, large inductance L and capacitance C are required to achieve high frequencies, which in turn exacerbates the aforementioned miniaturization difficulties. In addition, the frequency tuning range of the conventional voltage-controlled oscillator is narrow, so that the universality of the phase-locked loop is limited, and a specific phase-locked loop needs to be designed for a specific circuit (or frequency).
Accordingly, there is a need for a novel phase locked loop that overcomes one or more of the above and other problems of the prior art.
Disclosure of Invention
It is an object of the present invention to provide a spin oscillator based phase locked loop circuit that achieves one or more of the following advantages: the integrated level is high, the device can be miniaturized, the applicable frequency range is wide, and the device can be used for high-frequency circuits and the like.
According to an exemplary embodiment of the present invention, a spin oscillator based phase locked loop circuit may include: a phase discriminator which receives an input signal and a feedback signal from an output terminal of the phase-locked loop circuit, and outputs a voltage signal reflecting a phase difference between the input signal and the feedback signal; the low-pass filter filters the voltage signal output by the phase discriminator, filters out high-frequency components of the voltage signal, and outputs low-frequency components of the voltage signal as control signals; a spin oscillator generating an oscillation signal when the control signal is applied thereto, the oscillation signal being output through an output terminal of the phase-locked loop circuit and fed back to the phase detector through a feedback loop connecting the output terminal of the phase-locked loop circuit and the phase detector, wherein the spin oscillator includes a spin injection layer and a precession layer provided on the spin injection layer, the spin injection layer generating a spin-polarized current output upon receiving a non-spin-polarized current input, the precession layer being formed of a magnetic conductive material, receiving a spin-polarized current from the spin injection layer, and in response to the spin-polarized current, precessing a magnetic moment of the precession layer to generate the oscillation signal.
In some embodiments, the spin oscillator further comprises a spacer layer disposed between the spin injection layer and the precession layer.
In some embodiments, the spacer layer is formed of a non-magnetic, electrically conductive material or a non-magnetic, insulating material. When the spacer layer is formed of a magnetically conductive material, the thickness of the spacer layer is less than its spin diffusion length.
In some embodiments, the spin injection layer is formed of a spin hall effect material or an abnormal hall effect material. The spin hall effect material includes: pt, Au, Ta, Pd, Ir, W, Bi, Pb, Hf, Y, and combinations thereof; IrMn, PtMn and AuMn; and Bi2Se3、Bi2Te3. The anomalous hall effect material comprises: fe. Co, Ni, and alloys thereof; pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, and alloys thereof.
In some embodiments, the spin oscillator based phase locked loop circuit further comprises a high pass filter disposed between the output of the spin oscillator and the output of the phase locked loop circuit.
In some embodiments, the spin oscillator based phase locked loop circuit further comprises a frequency divider disposed in the feedback loop.
Another embodiment of the invention provides an electronic circuit comprising any of the aforementioned phase-locked loop circuits.
Drawings
Fig. 1 shows a prior art phase locked loop circuit.
Figure 2 illustrates a spin oscillator according to an embodiment of the present invention.
Fig. 3 schematically shows the operating principle of the spin oscillator of fig. 2.
FIG. 4 illustrates a spin oscillator based phase locked loop circuit according to an embodiment of the present invention.
Figure 5 shows a spin oscillator based phase locked loop circuit according to another embodiment of the invention.
Detailed Description
Exemplary embodiments of the present invention will be described below with reference to the accompanying drawings.
Fig. 2 shows a block diagram of a spin oscillator 200 according to an embodiment of the invention. Fig. 3 schematically illustrates the operating principle of the spin oscillator 200.
As shown in fig. 2, the core component of the spin oscillator 200 is a multilayer film structure 210, which may include a spin injection layer 212, a spacer layer 214, and a precession layer 216.
The spin injection layer 212 is produced from a material that can generate spin current. It is well known that electrons have spin properties, which can be divided into spin-up electrons and spin-down electrons, for example. In the ordinary current, the spin-up electrons and the spin-down electrons account for about half of each, and therefore the ordinary current is unpolarized. When a current that is not spin-polarized passes through the spin injection layer 212, it is converted into a spin-polarized current, so that the spin-polarized current can be injected into a magnetic precession layer 216, which will be described later. Such a spin injection layer 212 may be formed of a Spin Hall Effect (SHE) material or an Abnormal Hall Effect (AHE) material. Examples of spin hall effect materials include, but are not limited to, non-magnetic metallic materials such as Pt, Au, Ta, Pd, Ir, W, Bi, Pb, Hf, Y, and combinations thereof; antiferromagnetic materials such as IrMn, PtMn, and AuMn; and such as Bi2Se3、Bi2Te3Topological insulator materialAnd (3) materials and the like. Examples of anomalous hall effect materials include, but are not limited to, ferromagnetic metals such as Fe, Co, Ni, rare earth materials such as Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, any combination of these ferromagnetic metals and rare earth materials, and the like. In some preferred embodiments, the spin injection layer 212 may be formed of a ferromagnetic metal or alloy such as Fe, Co, Ni, CoFe, NiFe.
In embodiments where the spin injection layer 212 is formed of a magnetic material, preferably the magnetic moment of the spin injection layer 212 is fixed. In some embodiments, the magnetic moment of the spin injection layer 212 may be fixed in a self-pinned manner. For example, the spin injection layer 212 itself may be formed using a hard magnetic material having a large coercive force. Alternatively, the magnetic moment of the spin injection layer 212 may be fixed using a pinned structure. For example, an antiferromagnetic pinning layer may be formed on the opposite side of the spin injection layer 212 from the spacer layer 214 to fix the magnetic moment of the spin injection layer 212.
The spacer layer 214 may be formed of a non-magnetic, electrically conductive material or a non-magnetic, insulating material. When the spin injection layer 212 is formed of a magnetic material, a spacer layer 214 is necessary, which magnetically decouples the spin injection layer 212 and the magnetic precession layer 216 from each other. The spacer layer 214 is optional when the spin injection layer 212 is formed of a non-magnetic material. That is, the spacer layer 214 may be formed between the spin injection layer 212 and the magneto-precession layer 216, or any layer may not be formed therebetween, so that the spin injection layer 212 and the magneto-precession layer 216 are in direct contact with each other.
When the spacer layer 214 is formed of a non-magnetic, electrically conductive material, a spin-polarized current in the spin injection layer 212 may pass through the spacer layer 214 to the magneto-precession layer 216. In order to preserve the spin-polarization properties of the spin-polarized current, the thickness of the spacer layer 214 should not exceed its spin-diffusion length. Examples of non-magnetic, electrically conductive materials that can be used to form spacer layer 214 include, but are not limited to, Cu, Ru, Ag, Au, Pt, Cr, Al, Zn, Pd, Zr, Ti, Sc, and the like. In some embodiments, the spacer layer 214 is preferably formed of a material with a long spin diffusion length, such as, but not limited to, Cu, Ru, or the like. When the spacer layer 214 is formed of a non-magnetic insulating material, spin-polarized current in the spin injection layer 212 may tunnel through the spacerLayer 214 to precession layer 216. The tunneling current is not subject to inelastic scattering and thus retains its spin polarization properties. Examples of nonmagnetic insulating materials that may be used to form the spacer layer 214 include, but are not limited to, MgO, Al2O3、AlN、Ta2O5、HfO2And so on.
The precession layer 216 is formed of a magnetically conductive material that may have in-plane magnetization, and may also have perpendicular magnetization. When a spin-polarized current from the spin injection layer 212 enters the magneto-precession layer 216, it will exert a spin transfer torque on the magnetic moment of the magneto-precession layer 216, as shown in FIG. 3. If this spin transfer torque is not sufficient to flip the magnetic moment of the precession layer 216, the magnetic moment of the precession layer 216 will precess around the original magnetization direction due to the spin transfer torque and the coercivity. The precession frequency f of the magnetic precession layer 216 may be determined by equation 1 below:
where γ is the gyromagnetic ratio, H is the external magnetic field, HanIs a magnetocrystalline anisotropy field, HdIs a demagnetizing field, MeffIs the effective saturation magnetization. Since the resistance of the multilayer film structure 210 is substantially proportional to the cosine of the magnetization direction angle of the magnetic precession layer 216, the resistance of the multilayer film structure 210 will also change in an oscillating manner as the magnetic moment of the magnetic precession layer 216 precesses. In particular, when the magnetic moment of the magnetic precession layer 216 precesses by half a turn, i.e., 180 degrees, the resistance of the multilayer film structure 210 changes by one period. Therefore, the multilayer film structure 210 outputs an oscillation signal having a frequency 2 times the magnetic moment precession frequency of the magnetic precession layer 216.
With continued reference to fig. 2, as described above, when a bias voltage Uc is applied to the multilayer film structure 210 and the bias voltage is insufficient to flip the magnetic moment of the precession layer 216, the multilayer film structure 210 will output a high frequency oscillation signal on the output terminal OUT due to the precession of the magnetic moment of the precession layer 216.
The spin oscillator 200 described above with reference to figures 2 and 3 has a number of features. First, the output frequency of the spin oscillator 200 can be tuned with the bias voltage Uc. In general, in the case where the magnetic moment of the magnetic precession layer 216 is not inverted, the higher the bias voltage Uc, the faster the magnetic moment of the magnetic precession layer 216 precesses, and thus the larger the output frequency of the spin oscillator 200. This characteristic of the spin oscillator 200 makes it possible to replace a conventional LC oscillator type or crystal oscillator type voltage controlled oscillator for use in phase locked loop current, as will be described in further detail below.
In addition, the spin oscillator 200 can provide a high frequency output signal, and its output frequency may vary depending on the material of the precession layer 216. In general, when the magneto-precession layer 216 is formed of a soft magnetic material, the output frequency of the multilayer film structure 210 can easily reach a level of 1GHz or more, and even several tens of GHz. When the magnetic precession layer 216 is formed of a hard magnetic material, since the hard magnetic material has a larger magnetocrystalline anisotropy field than the soft magnetic material, an output frequency of 10GHz or more can be easily achieved, and even a signal up to a frequency of about 50GHz can be output. That is, the multilayer film structure 210 can directly generate an oscillation signal output at a microwave frequency level, which is much higher than the output frequency of conventional LC oscillators and crystal oscillators.
Another characteristic of the spin oscillator 200 is its wide frequency tuning range. In general, when the output frequency of the spin oscillator 200 is tuned with, for example, a voltage, the tuning range may be up to about 30% of its center output frequency. Considering that the output frequency of the spin oscillator 200 is high, the tuning range is a large frequency range, much larger than a conventional LC oscillator or crystal oscillator.
Yet another feature of the spin oscillator 200 is that it can be miniaturized for ease of integration. In general, the core structure of the spin oscillator 200, i.e., the magnetic multilayer film structure 210, can be formed in a planar size of the order of micrometers, and the respective layers in the magnetic multilayer film structure 210 can be formed in a thickness of the order of nanometers, so that the spin oscillator 200 can be made very small for integration in a large-scale integrated circuit.
Figure 4 illustrates a spin oscillator based phase locked loop circuit 300 according to an embodiment of the present invention. As shown in fig. 4, the phase-locked loop circuit 300 includes a phase detector 310, a low-pass filter 320, a spin oscillator 330, and a high-pass filter 340.
The phase detector 310 may receive an input signal ui(t) having a frequency ωiAnd may also receive an output signal u fed back from the output of the phase locked loop 300o(t) having a frequency ωo. The phase detector 310 may detect a phase difference between the two signals, and convert the detected phase difference signal into a voltage signal u, as in a conventional phase detector in a phase locked loopD(t) and output to low pass filter 320. Low pass filter 320 for voltage signal uD(t) filtering to remove high frequency components and using the low frequency components as control voltage uC(t) is supplied to the spin oscillator 330.
The structure and connection of the spin oscillator 330 may be as described above with reference to fig. 2 and thus will not be described in detail here. As described above, the oscillation frequency ω of the spin oscillator 330oDependent control voltage uC(t) and in this regard, the spin oscillator 330 can also be considered a novel class of voltage controlled oscillators. Thus, after entering the phase-locked state, the output of the spin oscillator 330 stabilizes to frequency ωoAnd it is related to the frequency omega of the input signaliAre equal.
The output of the spin oscillator 330 may be provided to a high pass filter 340, and the high pass filter 340 may filter out low frequency components in the output signal of the spin oscillator 330, e.g., derived from a control voltage uC(t) and a high frequency component as a final output signal uoAnd (t) outputting. As mentioned above, in the phase-locked state, the signal u is outputoFrequency ω of (t)oAnd an input signal uiFrequency ω of (t)iEqual and the phase difference between the two is a stable value.
Figure 5 illustrates a spin oscillator based phase locked loop circuit 400 according to another embodiment of the present invention. In the phase-locked loop circuit 400, the same components as those of the phase-locked loop circuit 300 shown in fig. 4 are denoted by the same reference numerals, and a repetitive description thereof will not be made. Hereinafter, only a portion of the phase-locked loop circuit 400 different from the phase-locked loop circuit 300 is described.
As shown in fig. 5, the phase-locked loop circuit 400 also includes an/N divider 410 disposed in the feedback path from the output of the phase-locked loop circuit 400 to the phase detector 310. When the output signal u of the phase-locked loop circuit 400oFrequency of (t) is ωoThen, after passing through/N divider 410, its frequency becomes ωoand/N. In the phase-locked state, the input signal u of the phase-locked loop circuit 400iFrequency ω of (t)iWith frequency omega of the feedback signaloN is equal, and the output frequency of the PLL circuit 400 is ωoThus, the phase-locked loop circuit 400 also realizes N frequency multiplication while phase locking. It is understood that N may be a positive integer equal to or greater than 1.
The spin oscillator based phase locked loop circuit of the present invention has many advantages. For example, the phase locked loop can be further miniaturized, suitable for direct integration in an integrated circuit or chip, due to the replacement of the conventional voltage controlled oscillator with a spin oscillator. Also, the spin oscillator easily realizes an oscillation frequency higher than that of a conventional voltage-controlled oscillator, and is thus very suitable for high-frequency circuit applications. Moreover, the spin oscillator has a larger tuning range, so the phase-locked loop circuit of the invention can be flexibly used in various application scenes.
Furthermore, the invention relates to an electronic circuit comprising the phase locked loop described above. As previously mentioned, phase locked loops are used in many circuits that may use the spin oscillator based phase locked loop of the present invention to achieve one or more of the aforementioned advantages.
Although the present invention has been described above with reference to exemplary embodiments, the present invention is not limited to these specific embodiments. Persons skilled in the art will readily appreciate from the disclosure that various changes and modifications in form and detail may be made without departing from the scope and spirit of the invention. For example, in the phase-locked loop circuit of the present invention, a power amplifier may be connected in series to enhance the output signal strength of the spin oscillator. The present invention is intended to cover such modifications and variations as would occur to those skilled in the art. The scope of the invention is to be defined only by the claims appended hereto, and by their equivalents.
Claims (10)
1. A spin oscillator based phase locked loop circuit comprising:
a phase discriminator which receives an input signal and a feedback signal from an output terminal of the phase-locked loop circuit, and outputs a voltage signal reflecting a phase difference between the input signal and the feedback signal;
the low-pass filter filters the voltage signal output by the phase discriminator, filters out high-frequency components of the voltage signal, and outputs low-frequency components of the voltage signal as control signals;
a spin oscillator that generates an oscillation signal when the control signal is applied, the oscillation signal being output through an output terminal of the phase-locked loop circuit and fed back to the phase detector through a feedback loop connecting the output terminal of the phase-locked loop circuit and the phase detector,
wherein the spin oscillator includes a spin injection layer that generates a spin-polarized current output upon receiving a non-spin-polarized current input, and a magnetic precession layer provided on the spin injection layer, the magnetic precession layer being formed of a magnetic conductive material, receiving a spin-polarized current from the spin injection layer, and in response to the spin-polarized current, precessing a magnetic moment of the magnetic precession layer to generate the oscillation signal,
wherein the magnetic precession layer is formed of a hard magnetic material,
wherein the precession frequency of the magnetic precession layer is determined by the following equation:
wherein, gamma represents the gyromagnetic ratio, H represents the external magnetic field, HanDenotes the magnetocrystalline anisotropy field, HdDenotes the demagnetizing field, MeffIndicating the effective saturation magnetization.
2. The spin oscillator based phase locked loop circuit of claim 1, wherein the spin oscillator further comprises a spacer layer disposed between the spin injection layer and the precession layer.
3. The spin oscillator-based phase locked loop circuit of claim 2, wherein the spacer layer is formed of a non-magnetic, electrically conductive material or a non-magnetic, electrically insulating material.
4. The spin oscillator based phase locked loop circuit of claim 3, wherein the spacer layer has a thickness less than its spin diffusion length when the spacer layer is formed of a magnetically conductive material.
5. The spin oscillator-based phase locked loop circuit of claim 1, wherein the spin injection layer is formed of a spin hall effect material or an abnormal hall effect material.
6. The spin oscillator-based phase locked loop circuit of claim 5, wherein the spin Hall effect material comprises: pt, Au, Ta, Pd, Ir, W, Bi, Pb, Hf, Y, and combinations thereof; IrMn, PtMn and AuMn; and Bi2Se3、Bi2Te3。
7. The spin oscillator-based phase locked loop circuit of claim 5, wherein the abnormal Hall effect material comprises: fe. Co, Ni, and alloys thereof; pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, and alloys thereof.
8. The spin oscillator based phase locked loop circuit of claim 1, further comprising a high pass filter disposed between the output of the spin oscillator and the output of the phase locked loop circuit.
9. The spin oscillator based phase locked loop circuit of claim 1, further comprising a frequency divider disposed in the feedback loop.
10. An electronic circuit comprising a phase locked loop circuit as claimed in any one of claims 1 to 9.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1272787C (en) * | 2002-07-30 | 2006-08-30 | 联发科技股份有限公司 | Disc player controlling circuit and related method |
| KR101284687B1 (en) * | 2012-04-18 | 2013-07-16 | 한국과학기술원 | Pll for the spin transfer torque oscillator |
| CN103779495A (en) * | 2014-01-22 | 2014-05-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | Magnetic element based on spin hall effect, microwave oscillator and manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7092318B2 (en) * | 2002-01-11 | 2006-08-15 | Victor Company Of Japan, Limited | Magneto-optical recording medium having a plurality of magnetic layers |
| JP5740259B2 (en) * | 2011-09-12 | 2015-06-24 | 株式会社東芝 | Spin torque oscillation element reproducing head and magnetic recording / reproducing apparatus |
| CN103255384B (en) * | 2013-05-15 | 2016-08-10 | 电子科技大学 | The barium ferrite film preparation method of crystal grain c-axis vertical film planar orientation growth |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1272787C (en) * | 2002-07-30 | 2006-08-30 | 联发科技股份有限公司 | Disc player controlling circuit and related method |
| KR101284687B1 (en) * | 2012-04-18 | 2013-07-16 | 한국과학기술원 | Pll for the spin transfer torque oscillator |
| CN103779495A (en) * | 2014-01-22 | 2014-05-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | Magnetic element based on spin hall effect, microwave oscillator and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| "Spin torque antiferromagnetic nanooscillator in the presence of magnetic noise";H. Gomonay et al;《condensed matter physics》;20120822;第43703-1至43703-9页 * |
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