CN106898616A - Tft基板的制作方法及tft基板 - Google Patents
Tft基板的制作方法及tft基板 Download PDFInfo
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- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
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- 229910052802 copper Inorganic materials 0.000 claims description 6
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
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Abstract
本发明提供一种TFT基板的制作方法及TFT基板。本发明的TFT基板的制作方法,通过对栅极金属层的图案进行设计,使栅极金属层对应形成跨接孔的区域设有反射块,从而在形成跨接孔的过程中,通过反射块对光线进行反射而加强形成跨接孔位置处的曝光强度,在受现有曝光机曝光极限尺寸限制的情况下,仍可保证高PPI显示面板器件中形成跨接孔时曝光充分,进而可实现高PPI显示面板产品的生产。本发明的TFT基板,可保证高PPI显示面板器件中形成跨接孔时曝光充分,进而可实现高PPI显示面板产品的生产。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种TFT基板的制作方法及TFT基板。
背景技术
目前,越来越多显示器开始使用薄膜晶体管(Thin Film Transistor,TFT)阵列(Array)基板进行像素驱动,以完成显示器的显示。TFT阵列基板作为目前显示器中的主要结构部分,用于向显示器提供驱动电路,通常设置有数条栅极扫描线和数条数据线,该数条栅极扫描线和数条数据线限定出多个像素单元,每个像素单元内设置有薄膜晶体管器件和像素电极,薄膜晶体管的栅极与相应的栅极扫描线相连,当栅极扫描线上的电压达到开启电压时,薄膜晶体管的源极和漏极导通,从而将数据线上的数据电压输入至像素电极,进而控制相应像素区域的显示。传统的TFT阵列基板上像素单元的结构通常包括自下而上依次层叠设置的衬底基板、半导体层、氧化层、栅极金属层、第一绝缘层、第二绝缘层、源漏极金属层、绝缘保护层、及像素电极;其中,为了实现两层之间的连接,还需要在像素单元上制作跨接孔,例如源漏极与有源层之间的连接,像素电极与漏极之间的连接等。
随着4K、8K显示器的开发,人们对显示器的分辨率的需求也越来越高,高像素密度(pixels per inch,PPI)已经成为显示器行业的主要发展方向。屏幕供应商开始挑战800PPI以上的产品,此时,需要将TFT器件的跨接孔的尺寸做到很小,如1um。目前,主要利用构图工艺对TFT器件的跨接孔进行制作,具体为,在涂有光刻胶(Photo Resist,PR)的基板上方放置掩膜板,然后利用曝光机对基板进行曝光,具体的,曝光机通过开启超高压水银灯发出紫外(UV)光线,将掩膜板上的图像信息转移到涂有光刻胶的基板表面上,基于掩膜板的图案,光刻胶会有被曝光的部分和未被曝光的部分;再利用显影液对光刻胶进行显影,即可去除光刻胶被曝光的部分,保留光刻胶未被曝光的部分(正性光刻胶),从而使光刻胶形成所需的图形;然后以保留的光刻胶为遮蔽,对基板进行蚀刻,从而形成跨接孔。然而目前业界普遍使用尼康(Nikon)曝光机进行阵列基板的曝光制程,受当前曝光机曝光极限尺寸影响(曝光极限尺寸2um),超高PPI显示面板器件的跨接孔的曝光制程,光刻胶常因曝光不充分而无法显影掉,导致产品的不良,如图1所示,待蚀刻材料层200上涂布有光刻胶层300,光刻胶层300上方设置的掩膜板500的图案精度为1μm,而曝光机的曝光极限尺寸为2μm,光刻胶层300对应掩膜板500上透光图案501的部分曝光不足,从而光刻胶层300在经显影液显影后,该曝光不足的部分并未完全被显影去除,进而无法进一步实现对待蚀刻材料层200进行图案化的蚀刻。
因此,设计一种新的TFT基板的制作方法,以满足超高PPI显示面板器件中跨接孔的曝光制程要求,是十分必要的。
发明内容
本发明的目的在于提供一种TFT基板的制作方法,可保证高PPI显示面板器件形成跨接孔时曝光充分,进而可实现高PPI显示面板产品的生产。
本发明的目的还在于提供一种TFT基板,可保证高PPI显示面板器件形成跨接孔时曝光充分,进而实现高PPI显示面板产品的生产。
为实现上述目的,本发明提供一种阵列基板的制作方法,包括以下步骤:
沉积并经图案化工艺形成栅极金属层的步骤,所述栅极金属层包括栅极、及反射块,所述反射块与所述栅极不连接;
在所述栅极金属层上形成绝缘层的步骤;
在所述绝缘层上涂布形成整面的光刻胶膜,对该层光刻胶膜进行曝光和显影,形成光刻胶层的步骤,对应所述反射块上方的光刻胶膜被曝光并形成第一通孔和第二通孔;
以光刻胶层为遮蔽层,通过蚀刻工艺继续对第一通孔和第二通孔进行蚀刻形成第一跨接孔和第二跨接孔的步骤。
所述的TFT阵列基板的制作方法,具体包括如下步骤:
步骤1、提供衬底基板,在衬底基板上依次形成缓冲层、半导体层、及氧化层;
步骤2、在所述氧化层上沉积并经图案化工艺形成栅极金属层;
步骤3、在所述氧化层、及栅极金属层上依次形成第一绝缘层、第二绝缘层,得到包括第一绝缘层、第二绝缘层的绝缘层;
步骤4、在所述第二绝缘层上涂布形成整面的光刻胶膜,提供掩膜板,所述掩膜板包括透光区、及遮光区,利用所述掩膜板对该层光刻胶膜进行曝光,在曝光过程中,所述反射块与掩膜板的透光区相对应,光线穿过所述掩膜板的透光区对光刻胶膜进行曝光,即对应所述反射块上方的光刻胶膜被曝光,所述反射块通过对光线进行反射从而加强其上方的光刻胶膜的曝光强度;然后对曝光后的光刻胶膜进行显影,此时,对应所述反射块上方形成第一通孔和第二通孔,得到光刻胶层;
步骤5、以光刻胶层作为遮蔽层,通过蚀刻工艺继续对所述第一通孔和第二通孔下方的第二绝缘层、第一绝缘层、栅极金属层、及氧化层进行蚀刻,对应所述第一通孔和第二通孔分别形成贯穿所述第二绝缘层、第一绝缘层、栅极金属层、及氧化层的第一跨接孔和第二跨接孔;
步骤6、在第二绝缘层上沉积并经图案化工艺形成源极和漏极,所述源极和漏极分别通过第一跨接孔和第二跨接孔与所述半导体层相接触。
所述栅极金属层的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
在形成栅极金属层的步骤中,经图案化工艺形成栅极金属层包括依次进行光刻胶涂布制程、曝光制程、显影制程、蚀刻制程、及光刻胶剥离制程。
在形成第一跨接孔和第二跨接孔的步骤中,所述第一跨接孔和第二跨接孔均贯穿所述绝缘层和栅极金属层。
本发明还提供一种TFT基板,设有第一跨接孔和第二跨接孔,包括栅极金属层、及设于栅极金属层上的绝缘层;
所述栅极金属层包括栅极、及与所述第一跨接孔和第二跨接孔对应设置的反射块,所述反射块与所述栅极不连接;
所述反射块用于在形成第一跨接孔和第二跨接孔过程中,通过对光线进行反射加强其上方区域的曝光强度。
所述的TFT基板,具体包括衬底基板、设于所述衬底基板上的缓冲层、设于所述缓冲层上的半导体层、设于所述缓冲层及半导体层上的氧化层、设于所述氧化层上的栅极金属层、设于所述氧化层及栅极金属层上的第一绝缘层、设于所述第一绝缘层上的第二绝缘层、及设于所述第二绝缘层上的源极和漏极;所述第一绝缘层、第二绝缘层共同构成绝缘层;
所述第一跨接孔和第二跨接孔在所述半导体层上方对应所述反射块的位置贯穿所述第二绝缘层、第一绝缘层、栅极金属层、及氧化层,所述源极和漏极分别通过第一跨接孔和第二跨接孔与所述半导体层相接触。
所述栅极金属层的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
所述栅极金属层通过图案化工艺形成,该图案化工艺具体包括依次进行的光刻胶涂布制程、曝光制程、显影制程、蚀刻制程、及光刻胶剥离制程。
所述第一跨接孔和第二跨接孔均贯穿所述绝缘层和栅极金属层。本发明的有益效果:本发明提供一种TFT基板的制作方法及TFT基板。本发明的TFT基板的制作方法,通过对栅极金属层的图案进行设计,使栅极金属层在对应形成跨接孔的区域设有反射块,从而在形成跨接孔的过程中,通过反射块对光线进行反射而加强形成跨接孔形成位置处的曝光强度,在受现有曝光机的曝光极限尺寸限制的情况下,仍可保证高PPI显示面板器件中形成跨接孔时曝光充分,进而可实现高PPI显示面板产品的生产。本发明的TFT基板,栅极金属层包括与跨接孔对应的反射块,从而在形成跨接孔的过程中,通过反射块对光线进行反射可加强形成跨接孔位置处的曝光强度,在受现有曝光机的曝光极限尺寸限制的情况下,仍可保证高PPI显示面板器件中形成跨接孔时曝光充分,进而实现高PPI显示面板产品的生产。
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为现有的TFT基板制作过程中因曝光机极限尺寸低而导致光刻胶层曝光不足的示意图;
图2为本发明的TFT基板的制作方法的示意流程图;
图3为本发明的TFT基板的制作方法一优选实施例的步骤1的示意图;
图4为本发明的TFT基板的制作方法一优选实施例的步骤2的示意图;
图5为本发明的TFT基板的制作方法一优选实施例的步骤3的示意图;
图6为本发明的TFT基板的制作方法一优选实施例的步骤4中对光刻胶膜曝光的示意图;
图7为本发明的TFT基板的制作方法一优选实施例的步骤4中对曝光后的光刻胶膜显影的示意图;
图8为本发明的TFT基板的制作方法一优选实施例的步骤5的示意图;
图9为本发明的TFT基板的制作方法一优选实施例的步骤6的示意图暨本发明TFT基板一优选实施例的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2,本发明首先提供一种TFT基板的制作方法,相对于现有的TFT基板制作方法,本发明通过对栅极金属层的图案重新设计,使栅极金属层在对应形成跨接孔的区域设有反射块,以满足高PPI显示面板器件中跨接孔的曝光制程要求,并请结合图3-9,图3-9为本发明一优选实施例的各步骤的示意图,该一优选实施例具体包括如下步骤:
步骤1、如图3所示,提供衬底基板10,在衬底基板10上依次形成缓冲层11、半导体层12、及氧化层13。
具体地,所述缓冲层11为氧化硅(SiO2)层、氮化硅(SiNx)层、或者由氧化硅层与氮化硅层叠加构成的复合层。
步骤2、如图4所示,在所述氧化层13上沉积并经图案化工艺形成栅极金属层14,所述栅极金属层14包括栅极141、及孤立的反射块142,所述反射块142与所述栅极141不连接。
具体地,所述栅极金属层14的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
具体地,所述步骤2中,经图案化工艺形成栅极金属层14包括依次进行光刻胶涂布制程、曝光制程、显影制程、蚀刻制程、及光刻胶剥离制程。
步骤3、如图5所示,在所述氧化层13、及栅极金属层14上依次形成第一绝缘层15、第二绝缘层16,得到包括第一绝缘层15和第二绝缘层16的绝缘层150。
具体地,所述第一绝缘层15、及第二绝缘层16均为氧化硅层、或氮化硅层。
步骤4、如图6所示,在所述第二绝缘层16上涂布形成整面的光刻胶膜50,提供掩膜板90,所述掩膜板90包括透光区91、及遮光区92,利用所述掩膜板90对该层光刻胶膜50进行曝光,在曝光过程中,所述反射块142与掩膜板90的透光区91相对应,光线穿过所述掩膜板90的透光区91对光刻胶膜50进行曝光,即对应所述反射块142上方的光刻胶膜50被曝光,所述反射块142通过对光线进行反射从而加强其上方的光刻胶膜50的曝光强度;然后如图7所示,对曝光后的光刻胶膜50进行显影,此时,由于在曝光过程中金属对光的反射性要好于SiNx、SiO2等材料,反射块142通过将光线反射,使其上方的光刻胶膜50曝光更加充分,那么在该显影过程中此部分可完全显影掉,即所述反射块142上方经曝光后的光刻胶膜50被去除掉,对应所述反射块142上方形成第一通孔551和第二通孔552,得到光刻胶层55。
步骤5、如图8所示,以光刻胶层55作为遮蔽层,通过蚀刻工艺继续对所述第一通孔551和第二通孔552下方的第二绝缘层16、第一绝缘层15、栅极金属层14、及氧化层13进行蚀刻,对应所述第一通孔551和第二通孔552分别形成贯穿所述第二绝缘层16、第一绝缘层15、栅极金属层14、及氧化层13的第一跨接孔181和第二跨接孔182。
步骤6、如图9所示,在第二绝缘层16上沉积并经图案化工艺形成源极171和漏极172,所述源极171和漏极172分别通过第一跨接孔181和第二跨接孔182与所述半导体层12相接触。
本发明的TFT基板的制作方法,使栅极金属层14在对应形成第一跨接孔181和第二跨接孔182的区域设有反射块142,从而在形成第一跨接孔181和第二跨接孔182过程中,通过反射块142对光线进行反射而加强形成跨接孔142形成位置处的光刻胶膜50的曝光强度,在受现有曝光机的曝光极限尺寸限制的情况下,例如,掩膜板90的图案精度为1μm,而曝光机的曝光极限尺寸为2μm的情况下,仍可保证高PPI显示面板器件中形成跨接孔时曝光充分,进而可实现高PPI显示面板产品的生产。
在上述TFT基板的制作方法的基础上,本发明还提供一种TFT基板,请参阅图9,图9为本发明TFT基板一优选实施例的结构示意图,该一优选实施例具体包括衬底基板10、设于所述衬底基板10上的缓冲层11、设于所述缓冲层11上的半导体层12、设于所述缓冲层11及半导体层12上的氧化层13、设于所述氧化层13上的栅极金属层14、设于所述氧化层13及栅极金属层14上的第一绝缘层15、设于所述第一绝缘层15上的第二绝缘层16、及设于所述第二绝缘层16上的源极171和漏极172;所述第一绝缘层15、第二绝缘层16共同构成绝缘层150。
具体地,所述TFT基板设有第一跨接孔181和第二跨接孔182;所述第一跨接孔181和第二跨接孔182在所述半导体层12上方对应所述反射块142的位置贯穿所述第二绝缘层16、第一绝缘层15、栅极金属层14、及氧化层13,所述源极171和漏极172分别通过第一跨接孔181和第二跨接孔182与所述半导体层12相接触。
具体地,所述栅极金属层14包括栅极141、及与所述第一跨接孔181和第二跨接孔182对应设置的反射块142,所述反射块142与所述栅极141不连接;
所述反射块142用于在形成第一跨接孔181和第二跨接孔182的过程中,通过对光线进行反射加强其上方区域的曝光强度。
具体地,所述栅极金属层14的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
具体地,所述栅极金属层14通过图案化工艺形成,该图案化工艺具体包括依次进行的光刻胶涂布制程、曝光制程、显影制程、蚀刻制程、及光刻胶剥离制程。
具体地,所述缓冲层11为氧化硅层、氮化硅层、或者由氧化硅层与氮化硅层叠加构成的复合层。
具体地,第一绝缘层15、及第二绝缘层16均为氧化硅层、或氮化硅层。
综上所述,本发明的TFT基板的制作方法,通过对栅极金属层的图案进行设计,使栅极金属层在对应形成跨接孔的区域设有反射块,从而在形成跨接孔的过程中,通过反射块对光线进行反射而加强形成跨接孔形成位置处的曝光强度,在受现有曝光机的曝光极限尺寸限制的情况下,仍可保证高PPI显示面板器件中形成跨接孔时曝光充分,进而可实现高PPI显示面板产品的生产。本发明的TFT基板,栅极金属层包括与跨接孔对应的反射块,从而在形成跨接孔的过程中,通过反射块对光线进行反射可加强形成跨接孔位置处的曝光强度,在受现有曝光机的曝光极限尺寸限制的情况下,仍可保证高PPI显示面板器件中形成跨接孔时曝光充分,进而实现高PPI显示面板产品的生产。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种TFT基板的制作方法,其特征在于,包括以下步骤:
沉积并经图案化工艺形成栅极金属层(14)的步骤,所述栅极金属层(14)包括栅极(141)、及反射块(142),所述反射块(142)与所述栅极(141)不连接;
在所述栅极金属层(14)上形成绝缘层(150)的步骤;
在所述绝缘层(150)上涂布形成整面的光刻胶膜(50),对该层光刻胶膜(50)进行曝光和显影,形成光刻胶层(55)的步骤,对应所述反射块(142)上方的光刻胶膜(50)被曝光并形成第一通孔(551)和第二通孔(552);
以光刻胶层(55)为遮蔽层,通过蚀刻工艺继续对第一通孔(551)和第二通孔(552)进行蚀刻形成第一跨接孔(181)和第二跨接孔(182)的步骤。
2.如权利要求1所述的TFT基板的制作方法,其特征在于,具体包括如下步骤:
步骤1、提供衬底基板(10),在衬底基板(10)上依次形成缓冲层(11)、半导体层(12)、及氧化层(13);
步骤2、在所述氧化层(13)上沉积并经图案化工艺形成栅极金属层(14);
步骤3、在所述氧化层(13)、及栅极金属层(14)上依次形成第一绝缘层(15)、第二绝缘层(16),得到包括第一绝缘层(15)、第二绝缘层(16)的绝缘层(150);
步骤4、在所述第二绝缘层(16)上涂布形成整面的光刻胶膜(50),提供掩膜板(90),所述掩膜板(90)包括透光区(91)、及遮光区(92),利用所述掩膜板(90)对该层光刻胶膜(50)进行曝光,在曝光过程中,所述反射块(142)与掩模板(90)的透光区(91)相对应,光线穿过所述掩膜板(90)的透光区(91)对光刻胶膜(50)进行曝光,即对应所述反射块(142)上方的光刻胶膜(50)被曝光,所述反射块(142)通过对光线进行反射从而加强其上方的光刻胶膜(50)的曝光强度;然后对曝光后的光刻胶膜(50)进行显影,此时,所述反射块(142)上方经曝光后的光刻胶膜(50)被去除掉,对应所述反射块(142)上方形成第一通孔(551)和第二通孔(552),得到光刻胶层(55);
步骤5、以光刻胶层(55)作为遮蔽层,通过蚀刻工艺继续对所述第一通孔(551)和第二通孔(552)下方的第二绝缘层(16)、第一绝缘层(15)、栅极金属层(14)、及氧化层(13)进行蚀刻,对应所述第一通孔(551)和第二通孔(552)分别形成贯穿所述第二绝缘层(16)、第一绝缘层(15)、栅极金属层(14)、及氧化层(13)的第一跨接孔(181)和第二跨接孔(182);
步骤6、在第二绝缘层(16)上沉积并经图案化工艺形成源极(171)和漏极(172),所述源极(171)和漏极(172)分别通过第一跨接孔(181)和第二跨接孔(182)与所述半导体层(12)相接触。
3.如权利要求1所述的TFT基板的制作方法,其特征在于,所述栅极金属层(14)的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
4.如权利要求1所述的TFT基板的制作方法,其特征在于,在形成栅极金属层(14)的步骤中,经图案化工艺形成栅极金属层(14)包括依次进行光刻胶涂布制程、曝光制程、显影制程、蚀刻制程、及光刻胶剥离制程。
5.如权利要求1所述的TFT基板的制作方法,其特征在于,在形成第一跨接孔(181)和第二跨接孔(182)的步骤中,所述第一跨接孔(181)和第二跨接孔(182)均贯穿所述绝缘层(150)和栅极金属层(14)。
6.一种TFT基板,其特征在于,设有第一跨接孔(181)和第二跨接孔(182),包括栅极金属层(14)、及设于栅极金属层(14)上的绝缘层(150);
所述栅极金属层(14)包括栅极(141)、及与所述第一跨接孔(181)和第二跨接孔(182)对应设置的反射块(142),所述反射块(142)与所述栅极(141)不连接;
所述反射块(142)用于在形成第一跨接孔(181)和第二跨接孔(182)过程中,通过对光线进行反射加强其上方区域的曝光强度。
7.如权利要求6所述的TFT基板,其特征在于,具体包括衬底基板(10)、设于所述衬底基板(10)上的缓冲层(11)、设于所述缓冲层(11)上的半导体层(12)、设于所述缓冲层(11)及半导体层(12)上的氧化层(13)、设于所述氧化层(13)上的栅极金属层(14)、设于所述氧化层(13)及栅极金属层(14)上的第一绝缘层(15)、设于所述第一绝缘层(15)上的第二绝缘层(16)、及设于所述第二绝缘层(16)上的源极(171)和漏极(172);所述第一绝缘层(15)、第二绝缘层(16)共同构成绝缘层(150);
所述第一跨接孔(181)和第二跨接孔(182)在所述半导体层(12)上方对应所述反射块(142)的位置贯穿所述第二绝缘层(16)、第一绝缘层(15)、栅极金属层(14)、及氧化层(13),所述源极(171)和漏极(172)分别通过第一跨接孔(181)和第二跨接孔(182)与所述半导体层(12)相接触。
8.如权利要求6所述的TFT基板,其特征在于,所述栅极金属层(14)的材料为钼、钛、铝、铜中的一种或多种的堆栈组合。
9.如权利要求6所述的TFT基板,其特征在于,所述栅极金属层(14)通过图案化工艺形成,该图案化工艺具体包括依次进行的光刻胶涂布制程、曝光制程、显影制程、蚀刻制程、及光刻胶剥离制程。
10.如权利要求6所述的TFT基板,其特征在于,所述第一跨接孔(181)和第二跨接孔(182)均贯穿所述绝缘层(150)和栅极金属层(14)。
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CN201710162222.7A CN106898616B (zh) | 2017-03-17 | 2017-03-17 | Tft基板的制作方法及tft基板 |
PCT/CN2017/080080 WO2018166022A1 (zh) | 2017-03-17 | 2017-04-11 | Tft基板的制作方法及tft基板 |
US15/529,510 US10475821B2 (en) | 2017-03-17 | 2017-04-11 | TFT substrate manufacturing method and TFT substrate |
US16/443,836 US10608021B2 (en) | 2017-03-17 | 2019-06-17 | TFT substrate manufacturing method and TFT substrate |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108198787A (zh) * | 2017-12-29 | 2018-06-22 | 深圳市华星光电技术有限公司 | 阵列基板及其制造方法 |
CN109360843A (zh) * | 2018-10-18 | 2019-02-19 | 京东方科技集团股份有限公司 | Oled显示基板及其制作方法、显示装置 |
CN113327938A (zh) * | 2021-05-28 | 2021-08-31 | 合肥维信诺科技有限公司 | 掩膜版、阵列基板的制作方法和显示装置 |
CN113327939A (zh) * | 2021-05-28 | 2021-08-31 | 合肥维信诺科技有限公司 | 阵列基板和显示面板 |
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CN113743152B (zh) * | 2020-05-27 | 2024-04-16 | 京东方科技集团股份有限公司 | 纹路识别装置 |
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CN1782842A (zh) * | 2004-12-04 | 2006-06-07 | Lg.菲利浦Lcd株式会社 | 液晶显示器件及其制造方法 |
CN1808709A (zh) * | 2005-01-18 | 2006-07-26 | 三星电子株式会社 | 薄膜晶体管阵列面板及其制造方法 |
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CN108198787A (zh) * | 2017-12-29 | 2018-06-22 | 深圳市华星光电技术有限公司 | 阵列基板及其制造方法 |
WO2019127777A1 (zh) * | 2017-12-29 | 2019-07-04 | 深圳市华星光电技术有限公司 | 阵列基板及其制造方法 |
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CN109360843A (zh) * | 2018-10-18 | 2019-02-19 | 京东方科技集团股份有限公司 | Oled显示基板及其制作方法、显示装置 |
CN113327938A (zh) * | 2021-05-28 | 2021-08-31 | 合肥维信诺科技有限公司 | 掩膜版、阵列基板的制作方法和显示装置 |
CN113327939A (zh) * | 2021-05-28 | 2021-08-31 | 合肥维信诺科技有限公司 | 阵列基板和显示面板 |
CN113327938B (zh) * | 2021-05-28 | 2023-12-22 | 合肥维信诺科技有限公司 | 掩膜版、阵列基板的制作方法和显示装置 |
CN113327939B (zh) * | 2021-05-28 | 2023-12-26 | 合肥维信诺科技有限公司 | 阵列基板和显示面板 |
Also Published As
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US10475821B2 (en) | 2019-11-12 |
CN106898616B (zh) | 2019-11-12 |
WO2018166022A1 (zh) | 2018-09-20 |
US20180308864A1 (en) | 2018-10-25 |
US10608021B2 (en) | 2020-03-31 |
US20190305005A1 (en) | 2019-10-03 |
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