CN106884144A - The preparation method of N-shaped CuO films, transoid hetero-junctions - Google Patents
The preparation method of N-shaped CuO films, transoid hetero-junctions Download PDFInfo
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- CN106884144A CN106884144A CN201710166387.1A CN201710166387A CN106884144A CN 106884144 A CN106884144 A CN 106884144A CN 201710166387 A CN201710166387 A CN 201710166387A CN 106884144 A CN106884144 A CN 106884144A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/087—Oxides of copper or solid solutions thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
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- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
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- C25B1/04—Hydrogen or oxygen by electrolysis of water
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/50—Processes
- C25B1/55—Photoelectrolysis
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
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Abstract
The invention provides a kind of preparation method of N-shaped CuO films, including：S copper target material) is carried out into magnetron sputtering in the environment of working gas and reacting gas, deposition obtains N-shaped CuO films on substrate；The sputtering power of the reaction magnetocontrol sputtering is 40~60W.Compared with prior art, the present invention is by changing the parameter in sputter procedure so as to the conduction type to prepared film regulates and controls, lead to so that Lacking oxygen occur in the CuO films of deposition, N-shaped is presented conductive, preparation-obtained N-shaped CuO films belong to electronic conduction, and its electron mobility is higher, electric conductivity is preferable, the light induced electron long lifespan for producing under light illumination, easily efficiently separates in the presence of built in field, reduces recombination rate；And the hetero-junctions that can be formed with p-type silicon has good rectification feature, and effectively carrier can be separated in photolysis water hydrogen, improves efficiency.
Description
Technical field
The invention belongs to inorganic functional thin-film material technical field, more particularly to N-shaped CuO films preparation method, transoid
Hetero-junctions.
Background technology
It is well known that in numerous regenerative resources, solar energy is so that its is widely distributed, cleanliness without any pollution the advantages of, into
To solve the preferable energy of future source of energy crisis.TiO is reported from Japanese Scientists Fujishima in 19722Electrode photoelectric is urged
Since changing hydrogen production by water decomposition, existing 130 multiple materials are found to have photocatalytic hydrogen production by water decomposition performance.Wherein, the forbidden band of CuO
Width be 1.21eV~1.55eV, all of visible ray and part black light can be absorbed in theory, at the same also have it is nontoxic,
It is cheap, the advantages of good stability, therefore it is widely used in solar cell, heterojunction device, light emitting diode and super
Lead device etc..But, the CuO in nature due to p-type electric-conducting is presented containing substantial amounts of copper room, hole moving in crystal
Shifting rate is relatively low and is easily combined, thus limits its application and the raising of efficiency.
During reaction magnetocontrol sputtering prepares CuO films, parameter has important influence for the performance of film.Mesh
It is p-type electric-conducting that the CuO of preceding report is most, if the conductive CuO films of N-shaped can be prepared, is conducive to extending it in photocatalytic water, two
The application in the fields such as pole tube light-emitting device, so improve the performance of corresponding device.
The content of the invention
In view of this, the technical problem to be solved in the present invention is to provide a kind of preparation method, the transoid of N-shaped CuO films
Hetero-junctions, the electric conductivity of N-shaped CuO films prepared by the method is preferable.
The invention provides a kind of preparation method of N-shaped CuO films, including：
S copper target material) is carried out into magnetron sputtering in the environment of working gas and reacting gas, deposition obtains n on substrate
Type CuO films；The sputtering power of the reaction magnetocontrol sputtering is 40~60W.
Preferably, the substrate temperature is 100 DEG C~200 DEG C.
Preferably, pre-sputtering is first carried out before the magnetron sputtering, the power of the pre-sputtering is 40~60W；It is described pre- to splash
The time penetrated is 15~20min.
Preferably, the 30~50min of time of the magnetron sputtering.
Preferably, the copper target material and the distance of substrate are 5~8cm.
Preferably, the working gas is argon gas；The flow of the working gas is 25~30sccm；The reacting gas
It is oxysome；The flow of the reacting gas is 8~12sccm.
Preferably, the step S) it is specially：
Place the substrate into magnetron sputtering room, to magnetron sputtering chamber forvacuum, then pass to working gas and reaction gas
Body；Heating substrate, it is after carrying out pre-sputtering then substrate center is just right with copper target material, magnetron sputtering is carried out, deposited on substrate
To N-shaped CuO films.
Preferably, after the magnetron sputtering, by substrate and the film being deposited on substrate with magnetron sputtering room with phase
Same environment keeps 20~40min, then naturally cools to room temperature, obtains being deposited on the N-shaped CuO films on substrate.
Present invention also offers a kind of transoid hetero-junctions, including p-type silicon and the N-shaped CuO films being arranged on p-type silicon.
Preferably, the N-shaped CuO films are above-mentioned prepared N-shaped CuO films.
The invention provides a kind of preparation method of N-shaped CuO films, including：S) by copper target material in working gas and reaction
Magnetron sputtering is carried out in the environment of gas, deposition obtains N-shaped CuO films on substrate；The sputtering work(of the reaction magnetocontrol sputtering
Rate is 40~60W.Compared with prior art, the present invention is by changing the parameter in sputter procedure so as to be led to prepared film
Electric type is regulated and controled, and the sputtering yield of copper is changed by adjusting sputtering power, so that oxygen sky occur in the CuO films of deposition
Position, is presented that N-shaped is conductive, and preparation-obtained N-shaped CuO films belong to electronic conduction, and its electron mobility is higher, electric conductivity compared with
Good, light absorbs are better than p-type CuO films, and the light induced electron long lifespan for producing under light illumination easily has in the presence of built in field
Effect is separated, and reduces recombination rate, more electronics is reached film surface, the half-reaction of photolysis water hydrogen is participated in, so as to carry
Photon efficiency high；And the hetero-junctions that can be formed with p-type silicon has good rectification feature, can be effective in photolysis water hydrogen
Ground is separated to carrier, improves efficiency.
Brief description of the drawings
Fig. 1 is the UV-visible spectrum of the CuO films obtained in the embodiment of the present invention 1~3 and comparative example 1；
Fig. 2 is the resistivity curve figure of the CuO films obtained in the embodiment of the present invention 1~3 and comparative example 1；
Fig. 3 is the I-V characteristic curve map of the CuO films obtained in the embodiment of the present invention 1~3 and comparative example 1.
Specific embodiment
Below in conjunction with the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described,
Obviously, described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based in the present invention
Embodiment, the every other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made, all
Belong to the scope of protection of the invention.
The invention provides a kind of preparation method of N-shaped CuO films, including：S) by copper target material in working gas and reaction
Magnetron sputtering is carried out in the environment of gas, deposition obtains N-shaped CuO films on substrate；The sputtering work(of the reaction magnetocontrol sputtering
Rate is 40~60W.
Wherein, the present invention is not particularly limited to the source of all raw materials, is commercially available；The substrate is ability
Substrate known to field technique personnel, has no special limitation, and quartz or silicon are preferably in the present invention.
According to the present invention, the step S) it is specially：Place the substrate into magnetron sputtering room, take out true in advance to magnetron sputtering chamber
Sky, then passes to working gas and reacting gas；Heating substrate, it is after carrying out pre-sputtering then substrate center is just right with copper target material,
Magnetron sputtering is carried out, deposition obtains N-shaped CuO films on substrate.
Place the substrate into magnetron sputtering room；The substrate is preferably 5~8cm with the distance of copper target material.
Then to magnetron sputtering chamber forvacuum, its vacuum is preferably made to be better than 5.0 × 10-4~7.0 × 10-4Pa, it is more excellent
Elect 5.0 × 10 as-4~6.0 × 10-4Pa, is further preferably 5.0 × 10-4Pa。
After vacuumizing, working gas and reacting gas are passed through；The working gas is preferably argon gas, and more preferably purity is excellent
In 99.99% argon gas；The flow of the working gas is preferably 25~30sccm, more preferably 25~28sccm, further preferably
It is 25sccm；The reacting gas is preferably oxygen, more preferably oxygen of the purity better than 99.99%；The reacting gas
Flow velocity is preferably 8~12sccm, more preferably 8~10sccm, is further preferably 8sccm.
Heating substrate；The substrate temperature is preferably 100 DEG C~200 DEG C, more preferably 120 DEG C~200 DEG C, further preferably
It is 150 DEG C~200 DEG C, is further preferably 180 DEG C~200 DEG C, most preferably 200 DEG C.
Then pre-sputtering is preferably carried out；The power of the pre-sputtering is preferably 40~60W, more preferably 40~50W, then excellent
Elect 50W as；The time of the pre-sputtering is preferably 15~20min, more preferably 15~18min, is further preferably 15min；Splash in advance
The purpose penetrated is to remove the pollutant of copper target material surface.
After pre-sputtering, preferably rotation substrate location Shi Qi centers are just right with target, then carry out magnetron sputtering, the magnetic control
The sputtering power of sputtering is 40~60W, more preferably preferably 40~50W, 50W；The time of the magnetron sputtering is preferably 30
~50min, more preferably 30~40min, are further preferably 30min.During reaction magnetocontrol sputtering prepares CuO films, ginseng
Number has important influence for the performance of film, after the copper atom gone out by argon ion sputtering reaches substrate, the oxygen with surrounding
Reacted generation CuO, suitably adjusts sputtering power, and the copper atom for sputtering and reaching substrate surface can be made to be more than oxygen atom, from
And film is presented, and N-shaped is conductive, too high power can then generate Cu2The dephasigns such as O.
After magnetron sputtering, preferably substrate is protected in magnetron sputtering room with the film being deposited on substrate with identical environment
20~40min is held, after more preferably keeping 30min, room temperature is naturally cooled to, obtains being deposited on the N-shaped CuO films on substrate.
The present invention is passed through by changing the parameter in sputter procedure so as to the conduction type to prepared film regulates and controls
Regulation sputtering power changes the sputtering yield of copper, so that Lacking oxygen occur in the CuO films of deposition, N-shaped conduction is presented, prepared
The N-shaped CuO films for obtaining belong to electronic conduction, and its electron mobility is higher, and preferably, light absorbs are thin better than p-type CuO for electric conductivity
Film, the light induced electron long lifespan for producing under light illumination, easily efficiently separates in the presence of built in field, reduces recombination rate,
More electronics is reached film surface, the half-reaction of photolysis water hydrogen is participated in, so as to improve photon efficiency；And can be with
The hetero-junctions that p-type silicon is formed has good rectification feature, and effectively carrier can be separated in photolysis water hydrogen, carries
High efficiency.
Present invention also offers a kind of transoid hetero-junctions, including p-type silicon and the N-shaped CuO films being arranged on p-type silicon；Institute
The thickness for stating p-type silicon is preferably 0.5~10mm, more preferably 0.5~5mm, is further preferably 1~3mm, most preferably 1mm；It is described
The thickness of N-shaped CuO films is preferably 50~500nm, more preferably 50~300nm, is further preferably 100~200nm, further preferably for
120~160nm, most preferably 135nm)；The N-shaped CuO films are N-shaped CuO films well known to those skilled in the art,
Have no special limitation, the N-shaped CuO films that the present invention is preferably prepared according to the method described above.
In order to further illustrate the present invention, the preparation side of the N-shaped CuO films for providing the present invention with reference to embodiments
Method, transoid hetero-junctions are described in detail.
Reagent used is commercially available in following examples.
Embodiment 1
1.1 put in magnetron sputtering room cleaned silicon substrate, and regulation target-substrate distance is 8cm.
1.2 pairs of sputtering chamber forvacuum, make its vacuum be better than 5.0 × 10-4Pa。
1.3 open gas valve, are passed through O of the purity better than 99.99%2And Ar, flow control valve is adjusted, make oxygen stream
It is 8sccm to measure, and argon flow amount is 25sccm.
1.4 heating substrates, make it heat up and are kept for 200 DEG C.
1.5 regulation sputtering powers are 50W, pre-sputtering 15min.
1.6 rotation substrate location Shi Qi centers are just right with target, and 30min is sputtered with the power in step 1.5.
Gained film in step 1.6 is kept 30min by 1.7 in sputtering chamber with equivalent environment, naturally cools to normal temperature, then institute
It is CuO films uniform, that N-shaped is conductive to obtain film, and itself and substrate p-type silicon form transoid hetero-junctions.
Transoid hetero-junctions to being obtained in embodiment 1 detects that it is 1.1V to obtain its cut-in voltage, positive and negative at ± 3V
Electric current ratio is 102.
Embodiment 2
2.1 put in magnetron sputtering room cleaned silicon substrate, and regulation target-substrate distance is 8cm.
2.2 pairs of sputtering chamber forvacuum, make its vacuum be better than 5.0 × 10-4Pa。
2.3 open gas valve, the O by purity better than 99.99%2And Ar, flow control valve is adjusted, make oxygen stream
It is 8sccm to measure, and argon flow amount is 25sccm.
2.4 heating substrates, make it heat up and are kept for 200 DEG C.
2.5 regulation sputtering powers are 60W, pre-sputtering 15min.
2.6 rotation substrate location Shi Qi centers are just right with target, and 30min is sputtered with the power in step 2.5.
Gained film in step 2.6 is kept 30min by 2.7 in sputtering chamber with equivalent environment, naturally cools to normal temperature, then institute
It is CuO films uniform, that N-shaped is conductive to obtain film, and itself and substrate p-type silicon form transoid hetero-junctions.
Transoid hetero-junctions to being obtained in embodiment 2 detects that it is 1.4V to obtain its cut-in voltage, positive and negative at ± 3V
Electric current ratio is 17.
Embodiment 3
3.1 put in magnetron sputtering room cleaned silicon substrate, and regulation target-substrate distance is 8cm.
3.2 pairs of sputtering chamber forvacuum, make its vacuum be better than 5.0 × 10-4Pa。
3.3 open gas valve, are passed through O of the purity better than 99.99%2And Ar, flow control valve is adjusted, make oxygen stream
It is 8sccm to measure, and argon flow amount is 25sccm.
3.4 heating substrates, make it heat up and are kept for 200 DEG C.
3.5 regulation sputtering powers are 40W, pre-sputtering 15min.
3.6 rotation substrate location Shi Qi centers are just right with target, and 30min is sputtered with the power in step 3.5.
Gained film in step 3.6 is kept 30min by 3.7 in sputtering chamber with equivalent environment, naturally cools to normal temperature, then institute
It is CuO films uniform, that N-shaped is conductive to obtain film, and itself and substrate p-type silicon form transoid hetero-junctions.
Transoid hetero-junctions to being obtained in embodiment 3 detects that it is 1.5V to obtain its cut-in voltage, positive and negative at ± 3V
Electric current ratio is 11.
Comparative example 1
1.1 put in magnetron sputtering room cleaned silicon substrate, and regulation target-substrate distance is 8cm.
1.2 pairs of sputtering chamber forvacuum, make its vacuum be better than 5.0 × 10-4Pa。
1.3 open gas valve, the O by purity better than 99.99%2And Ar, flow control valve is adjusted, make oxygen stream
It is 8sccm to measure, and argon flow amount is 25sccm.
1.4 heating substrates, make it heat up and are kept for 200 DEG C.
1.5 regulation sputtering powers are 30W, pre-sputtering 15min.
1.6 rotation substrate location Shi Qi centers are just right with target, and 30min is sputtered with the power in step 1.5.
Gained film in step 1.6 is kept 30min by 1.7 in sputtering chamber with equivalent environment, naturally cools to normal temperature, then institute
It is uniform, the CuO films of p-type electric-conducting to obtain film, and itself and substrate p-type silicon form homotype hetero-junctions.
Transoid hetero-junctions to being obtained in comparative example 1 detects that obtaining its does not almost have rectification characteristic.
CuO films to being obtained in embodiment 1~3 and comparative example 1 detect, obtain its UV-visible spectrum, such as
Shown in Fig. 1；Its resistivity curve figure is obtained, as shown in Figure 2；Its I-V characteristic curve map is obtained, as shown in figure 3, wherein a is real
Example 1 is applied, b is embodiment 2, and c is embodiment 3, and d is comparative example 1.Fig. 1, Fig. 2 and Fig. 3 explanation：When sputtering power is 30W, this
When CuO in be oxygen coalescence, show as p-type electric-conducting, its light absorbs, electric conductivity are poor, the corresponding positive counter current of homotype hetero-junctions
Than very little, almost without rectification characteristic；When sputtering power is 50W, prepared CuO films are N-shaped conduction, electric conductivity, light
Preferably, corresponding transoid hetero-junctions has obvious rectification characteristic to absorbability, and the positive counter current ratio at ± 3V is 102；When splashing
Power is penetrated for 40W, during 60W, its electric conductivity, light absorbs and rectification characteristic have all declined, and possible cause is too low sputtering power,
P-type CuO is then formed, power too high can generate Cu2O。
In terms of comprehensive, N-shaped CuO films are better than p-type CuO films in conductance, and the responsiveness to sunshine is more preferable.With
The transoid hetero-junctions rectification characteristic that p-type silicon is formed is better than homotype hetero-junctions, and the N-shaped CuO formed when sputtering power is 50W
Film is optimal, and the cut-in voltage of its hetero-junctions is 1.1V, and the positive counter current ratio at ± 3V is 102.
Claims (10)
1. a kind of preparation method of N-shaped CuO films, it is characterised in that including：
S copper target material) is carried out into magnetron sputtering in the environment of working gas and reacting gas, deposition obtains N-shaped CuO on substrate
Film；The sputtering power of the reaction magnetocontrol sputtering is 40~60W.
2. preparation method according to claim 1, it is characterised in that the substrate temperature is 100 DEG C~200 DEG C.
3. preparation method according to claim 1, it is characterised in that pre-sputtering is first carried out before the magnetron sputtering, it is described
The power of pre-sputtering is 40~60W；The time of the pre-sputtering is 15~20min.
4. preparation method according to claim 1, it is characterised in that the 30~50min of time of the magnetron sputtering.
5. preparation method according to claim 1, it is characterised in that the copper target material is 5~8cm with the distance of substrate.
6. preparation method according to claim 1, it is characterised in that the working gas is argon gas；The working gas
Flow be 25~30sccm；The reacting gas is oxysome；The flow of the reacting gas is 8~12sccm.
7. preparation method according to claim 1, it is characterised in that the step S) it is specially：
Place the substrate into magnetron sputtering room, to magnetron sputtering chamber forvacuum, then pass to working gas and reacting gas；Plus
Hot substrate, it is after carrying out pre-sputtering then substrate center is just right with copper target material, magnetron sputtering is carried out, deposition obtains N-shaped on substrate
CuO films.
8. preparation method according to claim 7, it is characterised in that after the magnetron sputtering, by substrate be deposited on lining
Film on bottom keeps 20~40min with magnetron sputtering room with identical environment, then naturally cools to room temperature, is deposited
N-shaped CuO films on substrate.
9. a kind of transoid hetero-junctions, it is characterised in that including p-type silicon and the N-shaped CuO films being arranged on p-type silicon.
10. transoid hetero-junctions according to claim 9, it is characterised in that the N-shaped CuO films are claim 1~8
N-shaped CuO films prepared by any one.
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| CN107604333A (en) * | 2017-09-18 | 2018-01-19 | 广东工业大学 | A kind of semiconductor film material |
| CN110106466A (en) * | 2019-04-28 | 2019-08-09 | 北京工业大学 | Ultra-thin heat dissipation film of one kind and its preparation method and application |
| CN110665503A (en) * | 2019-09-30 | 2020-01-10 | 扬州大学 | Degradable CO2Preparation method of semiconductor photocatalyst |
| CN112909118A (en) * | 2021-01-28 | 2021-06-04 | 广州大学 | Differential conversion type wide spectrum photoelectric detector and preparation method thereof |
| CN113948632A (en) * | 2021-10-18 | 2022-01-18 | 深圳技术大学 | Spin electron heterojunction and preparation method thereof |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107604333A (en) * | 2017-09-18 | 2018-01-19 | 广东工业大学 | A kind of semiconductor film material |
| CN107604333B (en) * | 2017-09-18 | 2020-03-10 | 广东工业大学 | Semiconductor thin film material |
| CN110106466A (en) * | 2019-04-28 | 2019-08-09 | 北京工业大学 | Ultra-thin heat dissipation film of one kind and its preparation method and application |
| CN110106466B (en) * | 2019-04-28 | 2021-12-31 | 北京工业大学 | Ultrathin heat dissipation film and preparation method and application thereof |
| CN110665503A (en) * | 2019-09-30 | 2020-01-10 | 扬州大学 | Degradable CO2Preparation method of semiconductor photocatalyst |
| CN110665503B (en) * | 2019-09-30 | 2022-07-26 | 扬州大学 | Degradable CO 2 Preparation method of semiconductor photocatalyst |
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