CN106876518A - 薄膜太阳能电池刻划装置及方法 - Google Patents
薄膜太阳能电池刻划装置及方法 Download PDFInfo
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- CN106876518A CN106876518A CN201710016534.7A CN201710016534A CN106876518A CN 106876518 A CN106876518 A CN 106876518A CN 201710016534 A CN201710016534 A CN 201710016534A CN 106876518 A CN106876518 A CN 106876518A
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- 239000010409 thin film Substances 0.000 title claims abstract description 150
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000010408 film Substances 0.000 claims abstract description 14
- 238000004891 communication Methods 0.000 claims abstract description 7
- 241000220317 Rosa Species 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 8
- 230000009466 transformation Effects 0.000 abstract description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 6
- 210000001142 back Anatomy 0.000 description 6
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 5
- 238000006748 scratching Methods 0.000 description 5
- 230000002393 scratching effect Effects 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- ODCWYMIRDDJXKW-UHFFFAOYSA-N simazine Chemical compound CCNC1=NC(Cl)=NC(NCC)=N1 ODCWYMIRDDJXKW-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- VEUACKUBDLVUAC-UHFFFAOYSA-N [Na].[Ca] Chemical compound [Na].[Ca] VEUACKUBDLVUAC-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN201710016534.7A CN106876518B (zh) | 2017-01-10 | 2017-01-10 | 薄膜太阳能电池刻划装置及方法 |
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CN201710016534.7A CN106876518B (zh) | 2017-01-10 | 2017-01-10 | 薄膜太阳能电池刻划装置及方法 |
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CN106876518A true CN106876518A (zh) | 2017-06-20 |
CN106876518B CN106876518B (zh) | 2019-09-20 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108735609A (zh) * | 2018-03-22 | 2018-11-02 | 苏州福唐智能科技有限公司 | 一种薄膜太阳能电池激光刻划装置及其刻划方法 |
CN109830554A (zh) * | 2018-12-21 | 2019-05-31 | 北京铂阳顶荣光伏科技有限公司 | 薄膜太阳能电池刻划装置及刻划方法 |
CN109873050A (zh) * | 2019-02-22 | 2019-06-11 | 北京铂阳顶荣光伏科技有限公司 | 太阳能电池制备方法及*** |
CN111370502A (zh) * | 2018-12-25 | 2020-07-03 | 北京铂阳顶荣光伏科技有限公司 | 太阳能电池模组及其制备方法和刻划设备 |
CN111463311A (zh) * | 2019-01-18 | 2020-07-28 | 北京铂阳顶荣光伏科技有限公司 | 一种太阳能电池刻划装置及刻划方法 |
CN112151630A (zh) * | 2019-06-27 | 2020-12-29 | 北京铂阳顶荣光伏科技有限公司 | 一种用于太阳能电池的刻划装置、刻划方法和产线 |
CN113899318A (zh) * | 2021-09-09 | 2022-01-07 | 信利光电股份有限公司 | 一种检测边框胶离边间距的装置和方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6019892B2 (ja) * | 2012-07-30 | 2016-11-02 | 三星ダイヤモンド工業株式会社 | スクライブ装置及びスクライブ方法 |
JP6280365B2 (ja) * | 2013-12-27 | 2018-02-14 | 三星ダイヤモンド工業株式会社 | 薄膜太陽電池の加工溝検出方法および加工溝検出装置 |
CN204315615U (zh) * | 2014-12-08 | 2015-05-06 | 大族激光科技产业集团股份有限公司 | 一种薄膜刻划装置 |
JP6547397B2 (ja) * | 2015-04-30 | 2019-07-24 | 三星ダイヤモンド工業株式会社 | 薄膜太陽電池の加工装置、および、薄膜太陽電池の加工方法 |
-
2017
- 2017-01-10 CN CN201710016534.7A patent/CN106876518B/zh active Active
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108735609A (zh) * | 2018-03-22 | 2018-11-02 | 苏州福唐智能科技有限公司 | 一种薄膜太阳能电池激光刻划装置及其刻划方法 |
CN108735609B (zh) * | 2018-03-22 | 2021-01-15 | 苏州福唐智能科技有限公司 | 一种薄膜太阳能电池激光刻划装置及其刻划方法 |
CN109830554A (zh) * | 2018-12-21 | 2019-05-31 | 北京铂阳顶荣光伏科技有限公司 | 薄膜太阳能电池刻划装置及刻划方法 |
CN111370502A (zh) * | 2018-12-25 | 2020-07-03 | 北京铂阳顶荣光伏科技有限公司 | 太阳能电池模组及其制备方法和刻划设备 |
CN111463311A (zh) * | 2019-01-18 | 2020-07-28 | 北京铂阳顶荣光伏科技有限公司 | 一种太阳能电池刻划装置及刻划方法 |
CN109873050A (zh) * | 2019-02-22 | 2019-06-11 | 北京铂阳顶荣光伏科技有限公司 | 太阳能电池制备方法及*** |
CN112151630A (zh) * | 2019-06-27 | 2020-12-29 | 北京铂阳顶荣光伏科技有限公司 | 一种用于太阳能电池的刻划装置、刻划方法和产线 |
CN113899318A (zh) * | 2021-09-09 | 2022-01-07 | 信利光电股份有限公司 | 一种检测边框胶离边间距的装置和方法 |
Also Published As
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CN106876518B (zh) | 2019-09-20 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20190603 Address after: 710000 Building No. 2, Unit 23, Unit 1 2301, Wangzu Qujiang No. 2, South Jinhua Road, South Huangqutou South Road, South of Yanxiang Road, Qujiang New Area, Xi'an City, Shaanxi Province Applicant after: Xi'an Lianzhong Yijian Beauty Building Engineering Management Co.,Ltd. Address before: 518055 No. 1068, Xue Yuan Avenue, Xili University Town, Nanshan District, Shenzhen, Guangdong Applicant before: SHENZHEN INSTITUTES OF ADVANCED TECHNOLOGY |
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TA01 | Transfer of patent application right | ||
CB02 | Change of applicant information |
Address after: 710000 Floor 26, Qujiang C Block, Wangzuo, Yanxiang Road, Qujiang New Area, Xi'an City, Shaanxi Province Applicant after: Xi'an Zhongyijian Technology Co.,Ltd. Address before: 710000 Building No. 2, Unit 23, Unit 1 2301, Wangzu Qujiang No. 2, South Jinhua Road, South Huangqutou South Road, South of Yanxiang Road, Qujiang New Area, Xi'an City, Shaanxi Province Applicant before: Xi'an Lianzhong Yijian Beauty Building Engineering Management Co.,Ltd. |
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CB02 | Change of applicant information | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: 710000 Floor 26, Qujiang C Block, Wangzuo, Yanxiang Road, Qujiang New Area, Xi'an City, Shaanxi Province Patentee after: Xi'an Zhongyijian Technology Group Co.,Ltd. Address before: 710000 Floor 26, Qujiang C Block, Wangzuo, Yanxiang Road, Qujiang New Area, Xi'an City, Shaanxi Province Patentee before: Xi'an Zhongyijian Technology Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder |