CN106873077B - A kind of silicon substrate TE mould analyzer based on asymmetrical directional coupler - Google Patents
A kind of silicon substrate TE mould analyzer based on asymmetrical directional coupler Download PDFInfo
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
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Abstract
The invention discloses a kind of silicon substrate TE mould analyzer based on asymmetrical directional coupler, the analyzer is followed successively by silicon-based substrate (8), buried oxide layer (9), analyzing component (14) and top covering (10) from the bottom to top, wherein buried oxide layer (9) is grown on the upper surface of silicon-based substrate (8), top covering (10) covers the upper surface of buried oxide layer (9), analyzing component (14) horizontal growth is covered in the upper surface of buried oxide layer (9), and by top covering (10)；The analyzing component (14) includes input channel (1), right wing put-through channel (2), output channel (3), left put-through channel (5), left bending channel (6) and left horizontal channel (7).The analyzer effectively reduces the insertion loss of analyzer, improves device extinction ratio, shortens the size of device.
Description
Technical field
The present invention relates to a kind of silicon substrate TE mould analyzer based on asymmetrical directional coupler belongs to integrated optics technique neck
Domain.
Background technique
In recent years, silicon-on-insulator (SOI) material system was due to compatible mature complementary metal oxide semiconductor (CMOS) work
Skill can be effectively reduced the advantages that size of device and be widely noticed.But in SOI material covering and core refractive rate difference it is larger and
Bring birefringent phenomenon constrain significantly this material tie up in integrated photonics more extensively, deeper into application, in order to slow
Birefringent bring negative effect is solved, a variety of polarization manipulation devices are designed and manufacture.Wherein, analyzer is because can eliminate
Unwanted polarised light in optical path and be widely applied in photon circuit；In general, mode analyzer is divided into TE and TM analyzing
Device.Wherein, TE analyzer can block TM polarised light by TE polarised light.Currently, the mould based on mixing plasma wave guide structure
Formula analyzer is increasingly becoming the hot spot of research, because compatible with SOI material system based on the device of the structure and show more excellent
Elegant performance, but due to the introducing of metal material, transmission of the ohmic loss compared to Medium Wave Guide for mixing plasma waveguide is damaged
Consume it is much bigger, so based on it is single mixing plasma wave guide structure mode analyzer insertion loss it is generally higher.Therefore, if
Counting out a kind of has that cramped construction, High Extinction Ratio, work belt is roomy and the lower analyzer of insertion loss is with regard to necessary.
Summary of the invention
Technical problem: the object of the present invention is to provide a kind of silicon substrate TE mould analyzer based on asymmetrical directional coupler,
The asymmetrical directional coupler knot that the analyzer is constituted using the waveguide of right wing silicon substrate horizontal slot and left mixing plasma waveguide
Structure separates different polarised lights, and wherein TM dissipates optically coupling to left and completely；This scheme effectively reduces analyzer
Insertion loss, improve device extinction ratio, shorten the size of device.
Technical solution: the present invention provides a kind of the silicon substrate TE mould analyzer based on asymmetrical directional coupler, the analyzing
Device is followed successively by silicon-based substrate, buried oxide layer, analyzing component and top covering from the bottom to top, and wherein buried oxide layer is grown on silicon substrate
The upper surface of substrate, top covering cover the upper surface of buried oxide layer, and analyzing component level is grown on the upper table of buried oxide layer
Face, and covered by top covering；
The analyzing component includes input channel, right wing put-through channel, output channel, left put-through channel, left bending
Channel and left horizontal channel；
One end of right wing put-through channel is connected with input channel, the other end is connected with output channel；
One end of left bending channel is connected with left put-through channel, the other end is connected with left horizontal channel；Wherein,
Output channel, left bending channel are located at the same end；
Input channel, right wing put-through channel and output channel are silicon substrate horizontal slot waveguide, left put-through channel, left
Bending channel and left horizontal channel are mixing plasma waveguide；
Left put-through channel is parallel with right wing put-through channel and alignment is put, and the distance between two channels are 0.2~0.5 μ
M constitutes asymmetrical directional coupler structure.
Wherein:
The structure of the silicon substrate horizontal slot waveguide is sandwich structure, and wherein middle section is low-index material
Layer, upper layer and bottom are silicon ducting layer；The structure of the mixing plasma waveguide is sandwich structure, and wherein bottom is silicon
Ducting layer, middle section are low refractive index material layer, and upper layer is metal cladding.
The material of the low refractive index material layer is silica or silicon nitride, the metal material of the metal cladding
Material is high loss metal of the imaginary part of dielectric constant value greater than 40；
High loss metal of the imaginary part of dielectric constant value greater than 40 refers to chromium, aluminium, zinc.
The silicon substrate horizontal slot waveguide meets the following conditions with the size for mixing both plasma waveguides:
1) waveguide of silicon substrate horizontal slot differs by more than 0.2 with the TE Effective index real part for mixing plasma waveguide, phase
Position mismatch；
2) waveguide of silicon substrate horizontal slot is equal with the mixing TM Effective index real part of plasma waveguide, phase matched.
The bending angle of the left bending channel is 30 °~90 °, and bending radius is 0.4~5 μm, is most preferably bent
Angle is 90 °.
The coupling length L of the asymmetrical directional coupler structureCMeet following formula:
In formula: λ is free space wavelength,It indicates the waveguide of silicon substrate horizontal slot and mixes the whole of plasma waveguide composition
The effective refractive index for the 0th rank TM mould that body structure is supported,Indicate the waveguide of silicon substrate horizontal slot and mixing plasma waveguide structure
At the effective refractive index of the 1st rank TM mould supported of overall structure, Re expression takes value of real part, and m is a positive odd number.
The silicon-based substrate is standard-sized silicon crystal unit, and the buried oxide layer is thermally grown in silicon-based substrate
Thick earth silicon material, the material of the top covering is silica, polymethyl methacrylate or air.
The buried oxide layer with a thickness of 2~3 μm.
The utility model has the advantages that compared with prior art, technical solution of the present invention has the advantages that
1, insertion loss is low: TE polarised light, which is limited in right wing horizontal slot waveguide because of phase mismatch, to be transmitted, and
It is not influenced by mixing plasma waveguide ohmic loss, so insertion loss is lower, and such as adjustment structural parameters, reduction
Coupling distance, reduces device size, and insertion loss can be reduced further.
2, work belt is roomy: it is the TE mould of horizontal groove waveguides that the mode analyzer in the present invention, which needs the essential condition met,
Formula does not meet the phase-matching condition of directional coupler and TM mould meets.And due to horizontal groove waveguides and mixing plasma waveguide
The mode distributions of structure and TM all have certain similitude, by rationally designing structural parameters, can make above-mentioned condition
It is set up within the scope of large bandwidth, i.e., the mode analyzer can work normally within the scope of large bandwidth.
3, extinction ratio is high: TE mode is almost nondestructively transmitted by horizontal slot waveguide, and TM mode can be coupled to completely
Left mixes in plasma waveguide, then passes through curved waveguide and horizontal waveguide.It selects and high metal covering layer material is lost, i.e.,
The imaginary part of dielectric constant value of metal is greater than 40, and such as aluminium, chromium, zinc, using ohmic loss, TM mode of energy can be shorter apart from interior complete
It is complete to dissipate.So very high extinction ratio may be implemented in the TE mould analyzer based on level trough guide directional coupler structure.
Detailed description of the invention
Fig. 1 is analyzing modular construction schematic diagram in the embodiment of the present invention 1；
Fig. 2 is the cross-sectional structure schematic diagram of asymmetrical directional coupling structure in the embodiment of the present invention 1；
Fig. 3 is mixing plasma waveguide TM in the case where low refractive index material layer thickness is different in the embodiment of the present invention 10
The variation relation figure of transmission loss (dB/ μm) and duct width (μm) of mould；
Fig. 4 is that plasma waveguide (HPWG) and silicon substrate horizontal slot waveguide (SWG) are mixed in the embodiment of the present invention 1 1.55
The variation relation figure of the effective refractive index real part of 0 rank mould and duct width at μm；
Fig. 5 is that 0 rank in plasma waveguide (HPWG) and silicon substrate horizontal slot waveguide (SWG) is mixed in the embodiment of the present invention 1
The effective refractive index real part of mould and the variation relation figure of operation wavelength；
Fig. 6 is asymmetrical directional coupling structure super mould of preceding two ranks TM at 1.55 μm in the embodiment of the present invention 1
Relationship between effective refractive index real part and corresponding coupling length and waveguide spacing；
Fig. 7 is 1.55 μm of operating wave strong point TE in the embodiment of the present invention 10Mould and TM0The principal component of mould is in polarization rotator
Transmission figure；
Fig. 8 is the structural schematic diagram of the improved analyzing component of the embodiment of the present invention 2；
In figure: input channel 1, right wing put-through channel 2, output channel 3, asymmetrical directional coupler structure 4, left are straight-through
Channel 5, left bending channel 6, left horizontal channel 7, silicon-based substrate 8, buried oxide layer 9, top covering 10, silicon ducting layer 11,
Low refractive index material layer 12, metal cladding 13, analyzing component 14.
Specific embodiment
Further explanation is done to the present invention with reference to the accompanying drawing.
Embodiment 1
As depicted in figs. 1 and 2, which is followed successively by silicon-based substrate 8, buried oxide layer 9, analyzing component 14 from the bottom to top
With top covering 10, wherein buried oxide layer 9 is grown on the upper surface of silicon-based substrate 8, and top covering 10 covers the upper of buried oxide layer 9
Surface, 14 horizontal growth of analyzing component are covered in the upper surface of buried oxide layer 9, and by top covering 10；
The analyzing component 14 includes input channel 1, right wing put-through channel 2, output channel 3, left put-through channel 5, a left side
Curved way channel 6 and left horizontal channel 7；
One end of right wing put-through channel 2 is connected with input channel 1, the other end is connected with output channel 3；
One end of left bending channel 6 is connected with left put-through channel 5, the other end is connected with left horizontal channel 7；Its
In, output channel 3, left bending channel 6 are located at the same end；
Input channel 1, right wing put-through channel 2 and output channel 3 are silicon substrate horizontal slot waveguide, left put-through channel 5,
Left bending channel 6 and left horizontal channel 7 are mixing plasma waveguide；
Left put-through channel 5 is parallel with right wing put-through channel 2 and alignment is put, 0.2~0.5 μ of the distance between two channels
M constitutes asymmetrical directional coupler structure 4；
The bending angle of the left bending channel 6 is 90 °, and bending radius is 1.5 μm.
Fig. 2 is the cross-sectional structure schematic diagram of asymmetrical directional coupling structure in analyzer.The left side of coupling regime
It is mixing plasma waveguide, right side is silicon substrate horizontal slot waveguide.The structure of silicon substrate horizontal slot waveguide is sandwich structure,
Middle middle section is low refractive index material layer 12, and upper layer and bottom are silicon ducting layer 11；Mix the structure of plasma waveguide
For sandwich structure, wherein bottom is silicon ducting layer 11, and middle section is low refractive index material layer 12, generally uses titanium dioxide
Silicon, upper layer are metal claddings 13.
Rational design mixing plasma waveguide is sized to meet following two condition with the waveguide of silicon substrate horizontal slot:
The TE Effective index real part of (1) two kind of waveguide differs by more than 0.2, phase mismatch；The TM mode of (2) two kinds of waveguides it is effective
Refractive index real part is equal, meets phase-matching condition.In this way, energy can be limited in right side when input port inputs TE mould
Silicon substrate slot type waveguide in；And when TM mode enters input port, due to meeting phase-matching condition, if coupling length
LCMeet:
So, the energy of TM mode can be coupled to completely in left side mixing plasma waveguide.(1) λ is free space in formula
Wavelength,It indicates the waveguide of silicon substrate horizontal slot and mixes the 0th rank TM mould that the overall structure that plasma waveguide is constituted is supported
Effective refractive index,Indicate the overall structure of the waveguide of silicon substrate horizontal slot and mixing plasma waveguide composition is supported the 1st
The effective refractive index of rank TM mould, Re expression take value of real part, and m is a positive odd number.Obviously, as m=1, LCDistance is most short.Utilize TM
The mould energy that the biggish characteristic of transmission loss can will couple to left in left mixing plasma waveguide dissipates completely.It is aobvious
So, select metal such as chromium, aluminium, the zinc of high loss that can make unit length transmission loss more as the material of metal cladding herein
Greatly, device length can be effectively reduced, make more compact structure.And 90 ° of bending mixing plasma waveguides of left are not only due to bending
It is lost and is accelerated the dissipation of TM, but also can effectively prevent energy coupling and return in right wing waveguide.
Fig. 3 gives to be mixed in plasma waveguide under 1.55 μm of operation wavelengths, 12 thickness of different low refractive index material layers
TM0The variation relation figure of transmission loss (dB/ μm) and duct width (μm) of mould.Wherein 11 height of silicon ducting layer is 0.22 μm,
The material of low refractive index material layer 12 is silica, and metal cladding 13 is chromium, with a thickness of 0.22 μm.It can from figure
Out, under the conditions of identical duct width, silicon dioxide layer is thinner, and TM mode transmission loss is bigger, more advantageously reduces device
Length.And in the case of same silicon dioxide layer thickness, width is smaller, and the unit length loss of TM mode is bigger.
Fig. 4 gives the effective refractive index real part and operation wavelength of basic mode in mixing plasma waveguide and horizontal groove waveguides
Variation relation figure.Here 11 height of silicon ducting layer is 0.22 μm, low refractive index material layer 12 (silica) with a thickness of
0.15 μm, metal cladding 13 is chromium, with a thickness of 0.22 μm, 1.55 μm of operation wavelength.It can be seen from the figure that when mixing etc. from
Sub- duct width is 0.3 μm, when slot type duct width is 0.32 μm, TM0Mould is able to satisfy phase-matching condition and TE0Mould phase misalignment
Match.
Fig. 5 gives the effective refractive index real part and operation wavelength of 0 rank mould in mixing plasma waveguide and horizontal groove waveguides
Variation relation figure.As can be seen that in biggish bandwidth range, TM0Mould phase matched and TE0The condition of mould phase mismatch is all
It can substantially meet.Therefore, polarization rotator can work normally in biggish bandwidth.
Fig. 6 give asymmetrical directional coupler structure 4 before 1.55 μm of operating wave strong points the two super moulds of rank TM it is effective
Relationship between refractive index real part and corresponding coupling length and waveguide spacing.Wherein, the super mould of TM refers to silicon substrate horizontal slot
The TM mode that the overall structure that waveguide and mixing plasma waveguide are constituted is supported.It can be seen that when mixing plasma waveguide
When with Road flat waveguide spacing less than 0.3 μm, coupling length is both less than 10 μm, and compact TE mould analyzer may be implemented.
TE is set forth in Fig. 70Mould ExComponent and TM0Mould EyTransmission variation diagram of the component in polarization rotator.It can see
Out, TE0Mode is limited in intermediate flat waveguide always in transmission process, and almost without loss.And TM0Mode can coupling
It closes into left side mixing plasma waveguide, and energy is gradually reduced with the increase of transmission range, and final dissipation completely.
Embodiment 2:
(silicon-based substrate 8, buried oxide layer 9 and top covering 10 and implementation as shown in improved 14 schematic diagram of analyzing component of Fig. 8
Example 1 is identical), the improved analyzing component 14 is straight-through including input channel 1, right wing put-through channel 2, output channel 3, left
Channel 5, left bending channel 6 and left horizontal channel 7；
One end of right wing put-through channel 2 is connected with input channel 1, the other end is connected with output channel 3；
One end of left bending channel 6 is connected with left put-through channel 5, the other end is connected with left horizontal channel 7；Its
In, output channel 3, left bending channel 6 are located at the same end；
Input channel 1, right wing put-through channel 2 and output channel 3 are silicon substrate horizontal slot waveguide, left put-through channel 5,
Left bending channel 6 and left horizontal channel 7 are mixing plasma waveguide；
Left put-through channel 5 is parallel with right wing put-through channel 2 and alignment is put, 0.2~0.5 μ of the distance between two channels
M constitutes asymmetrical directional coupler structure 4；
6 bending angle of left bending channel is 90 °, and bending radius is 1.5 μm；
The left horizontal channel 7 is taper, and TM mould remaining in the waveguide of left side can be converted into boring by such design
Radiation mode in shape structure, more quickly dissipates energy, is conducive to the size for shortening device.
The foregoing is merely a prefered embodiment of the invention, is not intended to limit the invention, all in the spirit and principles in the present invention
Within, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (7)
1. a kind of silicon substrate TE mould analyzer based on asymmetrical directional coupler, it is characterised in that: the analyzer from the bottom to top according to
Secondary is silicon-based substrate (8), buried oxide layer (9), analyzing component (14) and top covering (10), and wherein buried oxide layer (9) is grown
In the upper surface of silicon-based substrate (8), top covering (10) covers the upper surface of buried oxide layer (9), and analyzing component (14) is horizontal raw
It is longer than the upper surface of buried oxide layer (9), and is covered by top covering (10)；
The analyzing component (14) includes input channel (1), right wing put-through channel (2), output channel (3), left put-through channel
(5), left bending channel (6) and left horizontal channel (7)；
One end of right wing put-through channel (2) is connected with input channel (1), the other end is connected with output channel (3)；
One end of left bending channel (6) is connected with left put-through channel (5), the other end is connected with left horizontal channel (7)；
Wherein, output channel (3), left bending channel (6) are located at the same end；
Input channel (1), right wing put-through channel (2) and output channel (3) are silicon substrate horizontal slot waveguide, left put-through channel
(5), left bending channel (6) and left horizontal channel (7) are mixing plasma waveguide；
Left put-through channel (5) is parallel with right wing put-through channel (2) and alignment is put, and the distance between two channels are 0.2~0.5
μm, it constitutes asymmetrical directional coupler structure (4)；
The waveguide of silicon substrate horizontal slot meets the following conditions with the size for mixing both plasma waveguides:
1) waveguide of silicon substrate horizontal slot differs by more than 0.2 with the TE Effective index real part for mixing plasma waveguide, phase misalignment
Match；
2) waveguide of silicon substrate horizontal slot is equal with the mixing TM Effective index real part of plasma waveguide, phase matched.
2. a kind of silicon substrate TE mould analyzer based on asymmetrical directional coupler as described in claim 1, it is characterised in that: institute
The structure for the silicon substrate horizontal slot waveguide stated is sandwich structure, and wherein middle section is low refractive index material layer (12), upper layer
It is silicon ducting layer (11) with bottom；The structure of the mixing plasma waveguide is sandwich structure, and wherein bottom is silicon wave
Conducting shell (11), middle section are low refractive index material layer (12), and upper layer is metal cladding (13).
3. a kind of silicon substrate TE mould analyzer based on asymmetrical directional coupler as claimed in claim 2, it is characterised in that: institute
The material for the low refractive index material layer (12) stated is silica or silicon nitride, the metal material of the metal cladding (13)
It is height loss metal of the imaginary part of dielectric constant value greater than 40.
4. a kind of silicon substrate TE mould analyzer based on asymmetrical directional coupler as claimed in claim 3, it is characterised in that: institute
High loss metal of the imaginary part of dielectric constant value stated greater than 40 refers to chromium, aluminium, zinc.
5. a kind of silicon substrate TE mould analyzer based on asymmetrical directional coupler as described in claim 1, it is characterised in that: institute
The bending angle for the left bending channel (6) stated is 30 °~90 °, and bending radius is 0.4~5 μm.
6. a kind of silicon substrate TE mould analyzer based on asymmetrical directional coupler as described in claim 1, it is characterised in that: institute
The coupling length L for the asymmetrical directional coupler structure (4) statedCMeet following formula:
In formula: λ is free space wavelength,It indicates the waveguide of silicon substrate horizontal slot and mixes the whole knot that plasma waveguide is constituted
The effective refractive index for the 0th rank TM mould that structure is supported,It indicates the waveguide of silicon substrate horizontal slot and mixes what plasma waveguide was constituted
The effective refractive index for the 1st rank TM mould that overall structure is supported, Re expression take value of real part, and m is a positive odd number.
7. a kind of silicon substrate TE mould analyzer based on asymmetrical directional coupler as described in claim 1, it is characterised in that: institute
The silicon-based substrate (8) stated is standard-sized silicon crystal unit, and the buried oxide layer (9) is thermally grown on silicon-based substrate (8)
Earth silicon material, the material of the top covering (10) is silica, polymethyl methacrylate or air.
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108051889B (en) * | 2017-12-15 | 2019-09-03 | 东南大学 | A kind of slot type waveguide TE mould analyzer of mixing plasma effect auxiliary |
| CN109445132B (en) * | 2018-11-30 | 2023-10-20 | 宁波大学 | Phase-change material-based nonvolatile tunable directional coupler |
| CN110618486B (en) * | 2019-09-09 | 2020-06-30 | 东南大学 | Polarization-independent power divider based on symmetrical three-waveguide and sub-wavelength structure |
| CN110927868A (en) * | 2019-11-15 | 2020-03-27 | 武汉邮电科学研究院有限公司 | Directional coupling-based plasma mode conversion and multiplexer |
| CN111290191B (en) * | 2020-02-19 | 2023-07-18 | 联合微电子中心有限责任公司 | Directional coupler and optical switch based on silicon nitride platform |
| CN112612077B (en) * | 2020-12-09 | 2023-02-03 | 中国科学院微电子研究所 | Hybrid plasma waveguide and method of making the same |
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