CN106867256A - A kind of Graphene fabric-modifying anisotropic thermal Kapton, preparation method and application - Google Patents

A kind of Graphene fabric-modifying anisotropic thermal Kapton, preparation method and application Download PDF

Info

Publication number
CN106867256A
CN106867256A CN201710107734.3A CN201710107734A CN106867256A CN 106867256 A CN106867256 A CN 106867256A CN 201710107734 A CN201710107734 A CN 201710107734A CN 106867256 A CN106867256 A CN 106867256A
Authority
CN
China
Prior art keywords
kapton
anisotropic thermal
graphene
modifying
graphene fabric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710107734.3A
Other languages
Chinese (zh)
Other versions
CN106867256B (en
Inventor
范和平
王丹
严辉
李桢林
杨蓓
陈伟
刘莎莎
韩志慧
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HUASHUO TECHNOLOGY Co Ltd
Jianghan University
Original Assignee
HUASHUO TECHNOLOGY Co Ltd
Jianghan University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HUASHUO TECHNOLOGY Co Ltd, Jianghan University filed Critical HUASHUO TECHNOLOGY Co Ltd
Priority to CN201710107734.3A priority Critical patent/CN106867256B/en
Publication of CN106867256A publication Critical patent/CN106867256A/en
Application granted granted Critical
Publication of CN106867256B publication Critical patent/CN106867256B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/02Elements
    • C08K3/04Carbon
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1075Partially aromatic polyimides
    • C08G73/1082Partially aromatic polyimides wholly aromatic in the tetracarboxylic moiety
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/38Boron-containing compounds
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K7/00Use of ingredients characterised by shape
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K5/00Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
    • C09K5/08Materials not undergoing a change of physical state when used
    • C09K5/14Solid materials, e.g. powdery or granular
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/0353Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • C08K2003/2227Oxides; Hydroxides of metals of aluminium
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/38Boron-containing compounds
    • C08K2003/382Boron-containing compounds and nitrogen
    • C08K2003/385Binary compounds of nitrogen with boron
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/011Nanostructured additives
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/0154Polyimide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Combustion & Propulsion (AREA)
  • Thermal Sciences (AREA)
  • Materials Engineering (AREA)
  • Laminated Bodies (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The present invention relates to a kind of Graphene fabric-modifying anisotropic thermal Kapton, preparation method and application.Graphene fabric-modifying anisotropic thermal Kapton, it is with siliceous alicyclic diamine and aromatic series tetracarboxylic dianhydride as raw material, inorganic nano heat filling is added simultaneously obtains polyamic acid heat filling glue through polycondensation reaction, then contaminate in the Graphene fabric laminated board with 3D network structures, obtained through hot-imide.The high heat radiation aluminium-based copper-clad plate prepared by above-mentioned anisotropic thermal Kapton has thermal conductivity higher, wherein horizontal thermal conductivity factor is more than 8.0W/mK, longitudinal thermal conductivity factor is more than 5.0W/mK.Transmission heat can be oriented as component circuit substrate, heat will not be made in component inner accumulation, so as to reduce cooling device.The aluminum-based copper-clad plate has peel strength higher simultaneously, and elevated temperature cohesiveness is good.

Description

A kind of Graphene fabric-modifying anisotropic thermal Kapton, preparation method And application
Technical field
Anisotropic thermal Kapton, preparation method are prepared the present invention relates to a kind of Graphene fabric-modifying and be somebody's turn to do Film mainly solves to take into account high-termal conductivity and be manufactured into category at present in the application of high heat radiation aluminium-based copper-clad plate Originally, the technical problem of low-dielectric energy and high-dimensional stability, is mainly used on high cooling circuit board, belongs to macromolecular material Application field.
Background technology
High heat radiation aluminium-based copper-clad plate (TCCAS) will be large power supply, military electronic and the micro- electricity of high frequency as emerging substrate The main flow substrate that sub- equipment is used, compared to FR-4 and common aluminum-based copper-clad plate, with nearly more than 10 times of thermal conductivity, breakdown potential high The excellent properties such as pressure, Gao Ti, table resistivity, and excellent high temperature resistant, meet the trend and demand of high frequency microelectronics development.
Great power LED has that small volume, power consumption are small, heating is small, long lifespan, fast response time, safety as lighting source The advantages of low-voltage, good weatherability, good directionality, the special industries such as oil field, petrochemical industry, railway, mine, army, decor, Landscape light in city, display screen and stadiums etc., being with a wide range of applications in Special Work light fixture.But it is high-power LED needs to be heat-treated, which greatly increases the cost of LED.In the design process, the additives of most expensive is exactly to radiate Piece, fin can be made by various metal materials, and these materials both include relatively cheap aluminium, also more preferable including electric conductivity But more expensive material (such as copper and silver).And emerging high heat radiation aluminium-based copper-clad plate has radiating efficiency high, manufacture craft letter The features such as list, low cost, will there is vast potential for future development in great power LED.
The addition heat conduction in epoxy resin or Thermocurable polyimide is used to fill out in current most of aluminum-based copper-clad plates Used as conductive adhesive film, CN102673048A reports a kind of epoxy resin conductive adhesive film to material, by epoxy resin (A-80), asphalt mixtures modified by epoxy resin Fat (E-51), mark, aluminium nitride, nitrile rubber, acetone, dimethylformamide, synthesize high thermal conductive resin, its thermal resistance≤0.50 DEG C/W, thermal conductivity factor >=2.0W/mk, but poor in flexibility.CN104708869A reports a kind of Thermocurable polyimide heat conduction Insulating barrier, its main component is made up of thermoset polyimide resin with alumina fibre, obtains thermally conductive insulating layer, but heat conduction is imitated Fruit does not reach great power LED use requirement still, and thermosetting resin mechanical energy is poor, if using meeting at high temperature for a long time Decomposition is produced, service life is influenceed.
The content of the invention
It is an object of the present invention to provide a kind of Graphene fabric-modifying anisotropic thermal Kapton, preparation method and Application of the film in high heat radiation aluminium-based copper-clad plate.
Graphene fabric-modifying anisotropic thermal Kapton, it is with siliceous alicyclic diamine and aromatic series four Acid dianhydride is raw material, while add inorganic nano heat filling obtains polyamic acid-heat filling glue through polycondensation reaction, then Contaminate in the Graphene fabric laminated board with 3D network structures, obtained through hot-imide.
By such scheme, siliceous alicyclic diamine of the present invention includes silicone-containing diamines and silane-containing diamines, point Sub- formula is respectively such as formula 2,3, wherein R1It is containing 1~14 univalence hydrocarbyl or substituted hydrocarbon radical of carbon atom, such as methyl, ethyl, benzene Base etc., R2It is alkyl, phenylene and substituted phenylene etc., n is the integer more than or equal to 1, it is generally preferable to less than 10.It is preferential to select The aminopropyl tetramethyl disiloxanes (GAPD) of 1,3- bis-, two [4- (to phenoxy group)-phenoxy group] dimethylsilanes (APPMS), 1, One kind in the aminophenyl tetramethyl disiloxanes of 3- bis- and the α containing multiple dimethyl siloxane chains, ω-diamino propyl derivatives Or two or more mixtures.
By such scheme, as shown in Equation 4, R bases are represented aromatic series tetracarboxylic dianhydride monomer structure formula of the present invention in formula 4 Phenyl, xenyl, aromatic ether, aromatic ketone, preferably include pyromellitic acid anhydride (PMDA), bibenzene tetracarboxylic dianhydride (BPDA), One or more in benzophenone tetracarboxylic dianhydride (BTDA), oxydiphthalic (ODPA) and hexafluorodianhydride (6FDA) (6FDA) Mixture;
By such scheme, inorganic filler of the present invention is inorganic oxide or inorganic nitride, preferentially from oxygen Change one or more mixtures in aluminium (AlO), magnesia (MgO), boron nitride (BN), wherein particle diameter is 50~200nm.
By such scheme, polycondensation reaction prepares starting monomer aromatic tetracarboxylic acid two in polyamic acid-heat filling glue Acid anhydride is by mass percentage 5%~30%, preferably 10%~20% with filler usage amount in siliceous alicyclic diamine and filler; The gross mass percentage that the starting monomer aromatic tetracarboxylic acid dianhydride for using accounts for solvent and monomer with siliceous alicyclic diamine is 5% ~20%, preferably 10%~15%.
By such scheme, content percentage of the Graphene fabric in Kapton is 1%~15%, preferably 5% ~10%.
By such scheme, the Graphene fabric laminated board with 3D network structures is to do to grow with nickel wire reticulated Substrate, is layering what is obtained by chemical vapor infiltration in its superficial growth individual layer or the few graphene layer of the number of plies.
By such scheme, the nickel wire reticulated selects 200 mesh~300 mesh nickel wire reticulateds;Described Graphene Fabric laminated board includes 5~15 layer graphene tissue layers.
By such scheme, the thickness of the anisotropic thermal Kapton is 20~50 μm.It is of the present invention The method that Graphene fabric-modifying prepares anisotropic thermal Kapton, it is characterised in that first by in-situ polymerization, In aprotic polar solvent, using siliceous alicyclic diamine and aromatic series tetracarboxylic dianhydride, while add a small amount of inorganic nano leading Hot filler, low temperature polyamic acid-heat filling glue of the synthesis viscosity more than 40000mPas, then contaminates to 3D nets In the Graphene fabric laminated board of shape structure, Graphene fabric/polyamic acid-heat filling dipping thin plate is obtained, then through hot acyl Imidization obtains anisotropic thermal Kapton.
The TPI reaction equation is as shown in Equation 1.
By such scheme, in the preparation method of anisotropic thermal Kapton of the present invention, aromatic series four The ratio between carboxylic acid dianhydride and amount of material of siliceous alicyclic diamine are 0.95~1.2:1, preferably 1.01~1.1:1.
By such scheme, aprotic polar solvent of the present invention is 1-METHYLPYRROLIDONE (NMP), N, N- dimethyl One kind in formamide (DMF), DMAC N,N' dimethyl acetamide (DMAc), dimethyl sulfoxide (DMSO), hexamethyl phosphoramide (HMP) or Two or more mixtures.
By such scheme, the synthetic method of polyamic acid of the present invention-heat filling glue, it is characterised in that: In reactor, a certain amount of aprotic polar solvent is first added, a certain amount of siliceous alicyclic diamine is added again under nitrogen protection With inorganic nano heat filling, 0.5~2h of high-speed stirred at room temperature fully dissolves siliceous alicyclic diamine and by inorganic nano Heat filling is uniformly dispersed;Dianhydride is added into reactor in batches in 0.5~5h, 5~10 equal parts are specifically divided into, and 0 5~24h of stirring reaction at~5 DEG C, obtains polyamic acid-heat filling solution of the viscosity more than 40000mPas, is put into storage Deposit in tank, stored under -10 DEG C of low temperature.
By such scheme, the preparation method of described Graphene fabric laminated board:Nickel wire reticulated is first through watery hydrochloric acid table Face removal of impurities treatment, is then placed in H in quartz tube furnace2900~1100 DEG C of insulation a period of times are heated under stream atmosphere, then will Graphene growth catalyst is incorporated into quartz ampoule, and to be cooled to room temperature rapidly after 0.5~1h of reaction, then etching removes Ni Graphene fabric is obtained, Graphene fabric is layering, the Graphene fabric laminated board with 3D network structures is obtained.
By such scheme, described graphene growth catalyst is CH that volume flow ratio is the ︰ 1 of 4 ︰ 1~24、H2Gaseous mixture; Described rate of temperature fall is 150~220 DEG C/min.
By such scheme, the heating rate for being heated to 900~1100 DEG C is 5~20 DEG C/min, and etching removal Ni is The low-grade fever removal of immersion etchant, etching agent is 5~15g CuSO4, 50ml nitric acid and hydrochloric acid mixed liquor and 50ml deionized waters Mixed liquor, etching temperature be 30~45 DEG C, etch period be 24~48h.
By such scheme, described hot-imide process deviates from solvent to be first incubated 1~2h under 70~90 DEG C of vacuum, Then at a temperature of 110~130 DEG C, 140~160 DEG C, 170~190 DEG C, 220~240 DEG C, 270~290 DEG C, 320~340 DEG C 0.5~1h of each insulation makes its complete hot-imide, and thermoplasticity anisotropic thermal is obtained through cutting edge winding after hot-imide Kapton.
Above-mentioned Graphene fabric-modifying anisotropic thermal Kapton is in high heat radiation aluminium-based copper-clad plate is prepared Using application process is:By anisotropic thermal Kapton, 110~130 DEG C are hot-pressed onto on aluminium sheet, and are covered with Copper Foil, It is then fed into hot press compacting, pressing process:110~130 DEG C/0.5~1h, 140~160 DEG C, 170~190 DEG C, 220~240 DEG C each 1~2h, compacting is finished, and is cooled down, and is taken out, and is cut out by given size.
High heat radiation aluminium-based copper-clad plate comprising above-mentioned Graphene fabric-modifying anisotropic thermal Kapton.
Compared with prior art, advantage of the invention is that:
(1) growth substrate of Graphene is prepared as vapor deposition method by Ni mesh-likes fabric so that Graphene has Identical network structure, can obtain orderly three dimentional heat conduction network after being layering, and being added in polyimide resin can To realize horizontal heat conduction in face.
(2) a certain amount of inorganic heat filling is added during preparing polyamic acid by situ aggregation method so that thin Film insulating heat-conductive in the vertical, after being prepared into Kapton, with good heat conductivility, flexility, workability Energy, heat resistance, dimensional stability and chemical-resistant.
(3) the high heat radiation aluminium-based copper-clad plate prepared by thermoplasticity anisotropic thermal Kapton, with compared with Thermal conductivity high, wherein horizontal thermal conductivity factor is more than 8.0W/mK, longitudinal thermal conductivity factor is more than 5.0W/mK.As component Circuit substrate can orient transmission heat, will not be heat in component inner accumulation, so as to reduce cooling device.While the aluminium Base copper-clad plate has peel strength higher, and elevated temperature cohesiveness is good.
Specific embodiment
Embodiment 1
(1) preparation of Graphene fabric
Nickel wire mesh grid is the braid that the size of mesh opening being made into by a diameter of 45 μm of nickel wire is 70 × 70 μm.Size is 200 mesh.As gaseous phase deposition substrate.Twine soaks 10min through watery hydrochloric acid first, gets rid of impurity and surface oxide layer, then It is put into quartz tube furnace, H2With 10 DEG C/min heating rates to 1000 DEG C of insulations 10min, CH under stream atmosphere4 (24sccm)、H2The gaseous mixture of (6sccm) is incorporated into quartz ampoule as graphene growth catalyst, with 150 after reaction 30min DEG C/min lowers the temperature rapidly.Then reactant is put into etchant (copper nitrate 100g+ hydrochloric acid 500ml+ water 500ml) and is heated to 35 DEG C of immersion 1h, removal substrate Ni, you can obtain the Graphene fabric laminated board with certain network structure.
(2) synthesis of polyamic acid and the preparation of polyimide composite film
In 2000ml reactors, the aprotic polar solvent DMAc of 1000g is first added, then add the siliceous alicyclic rings of 59.0g The needle inorganic nano heat filling boron nitride of race diamines GAPD and 12.5g, nitrogen charging gas shielded, the high-speed stirred at 10 DEG C 0.5h, fully dissolving diamines are simultaneously dispersed by needle inorganic nano heat filling.52.0g aromatic dianhydrides PMDA is divided into 5 Equal part, point 5 addition reactors in 0.5h, and the stirring reaction 5h at 0 DEG C, obtain polyamic acid-heat filling glue, then The glue is contaminated to 10min between the Graphene fabric laminated board in (1), Graphene fabric/polyamic acid-heat filling is obtained Dipping plate.Then 2h abjection solvents, then in 110 DEG C, 140 DEG C, 170 DEG C of each 1h, 220 DEG C, 270 are first incubated under 70 DEG C of vacuum DEG C, 320 DEG C of each insulation 0.5h, make its complete hot-imide, the thermoplasticity for obtaining 20~50 μm through cutting edge winding after completion is each Anisotropy heat conduction Kapton.
(3) preparation of high heat radiation aluminium-based copper-clad plate
Graphene fabric/polyamic acid-heat filling laminated film in (2) is hot-pressed onto 10 × 15cm's at 110 DEG C On aluminium sheet, Copper Foil, feeding hot press compacting, pressing process are covered with:110 DEG C/0.5h, 140 DEG C, 170 DEG C, 220 DEG C of each 1h.It is complete Finish, cooling is taken out.Obtain the high heat radiation aluminium-based copper-clad plate that polyimides is heat-conducting layer.
Embodiment 2~6
In the same manner as in Example 1, simply each raw material type, quality and technological parameter are poor for the preparation method of embodiment 2~6 Different, as shown in table 1, the technological parameter of embodiment 2~6 is as shown in table 2 for the raw material of embodiment 2~6.To obtained by embodiment 2~6 Polyimide composite film and high heat radiation aluminium-based copper-clad plate carry out performance test, as a result as shown in table 3.
The raw material of 1 embodiment of table 1~6
The technological parameter of 2 embodiment of table 1~6
The Graphene fabric of table 3/Kapton and high heat radiation aluminium-based copper-clad plate the performance test results

Claims (12)

1. Graphene fabric-modifying anisotropic thermal Kapton, it is characterised in that:It is with siliceous alicyclic diamine It is raw material with aromatic series tetracarboxylic dianhydride, is filled out while adding inorganic nano heat filling and obtaining polyamic acid-heat conduction through polycondensation reaction Material glue, then contaminates in the Graphene fabric laminated board with 3D network structures, is obtained through hot-imide.
2. Graphene fabric-modifying anisotropic thermal Kapton according to claim 1, it is characterised in that:Institute The siliceous alicyclic diamine stated includes silicone-containing diamines and silane-containing diamines, and general molecular formula is respectively such as formula 2,3, wherein R1Be containing 1~14 univalence hydrocarbyl or substituted hydrocarbon radical of carbon atom, R2It is alkyl, phenylene and substituted phenylene etc., n is more than or equal to 1 Integer,
As shown in Equation 4, R bases represent phenyl, xenyl, aromatic ether, virtue to described aromatic series tetracarboxylic dianhydride monomer structure formula in formula 4 Ketone musk, preferably includes pyromellitic acid anhydride (PMDA), bibenzene tetracarboxylic dianhydride (BPDA), benzophenone tetracarboxylic dianhydride (BTDA), one or more mixtures in oxydiphthalic (ODPA) and hexafluorodianhydride (6FDA) (6FDA),
3. Graphene fabric-modifying anisotropic thermal Kapton according to claim 1, it is characterised in that:Contracting Poly- reaction prepares in polyamic acid-heat filling glue starting monomer aromatic tetracarboxylic acid dianhydride and siliceous alicyclic diamine and fills out Filler usage amount is by mass percentage 5%~30% in material;The starting monomer aromatic tetracarboxylic acid dianhydride for using with it is siliceous The gross mass percentage that alicyclic diamine accounts for solvent is 5%~20%.
4. Graphene fabric-modifying anisotropic thermal Kapton according to claim 1, it is characterised in that:Stone Content percentage of the black alkene fabric in Kapton is 1%~15%;The Graphene with 3D network structures is knitted Thing laminated board is to do growth substrate with nickel wire reticulated, few in its superficial growth individual layer or the number of plies by chemical vapor infiltration Graphene layer be layering what is obtained.
5. Graphene fabric-modifying anisotropic thermal Kapton according to claim 1, it is characterised in that:Institute Nickel wire reticulated is stated from 200 mesh~300 mesh nickel wire reticulateds;Described Graphene fabric laminated board includes 5~15 layers Graphene tissue layer;Described inorganic filler is inorganic oxide or inorganic nitride, and wherein particle diameter is 50~200nm;Institute The thickness for stating anisotropic thermal Kapton is 20~50 μm.
6. the Graphene fabric-modifying described in claim 1 prepares the preparation method of anisotropic thermal Kapton, its It is characterised by:First by in-situ polymerization, in aprotic polar solvent, siliceous alicyclic diamine and aromatic series tetracid two are used Acid anhydride, while adding a small amount of inorganic nano heat filling, low temperature polyamic acid-heat conduction of the synthesis viscosity more than 40000mPas is filled out Material glue, in then contaminating the Graphene fabric laminated board with 3D network structures, obtain Graphene fabric/polyamic acid- Heat filling impregnates thin plate, then obtains anisotropic thermal Kapton through hot-imide.
7. the preparation method of Graphene fabric-modifying anisotropic thermal Kapton according to claim 6, its It is characterised by:In the preparation method of described anisotropic thermal Kapton, aromatic tetracarboxylic acid's dianhydride with contain silicone grease The ratio between amount of material of ring race diamines is 0.95~1.2:1;Described aprotic polar solvent is 1-METHYLPYRROLIDONE (NMP), N,N-dimethylformamide (DMF), DMAC N,N' dimethyl acetamide (DMAc), dimethyl sulfoxide (DMSO), hexamethyl phosphinylidyne One or more mixture in amine (HMP).
8. Graphene fabric-modifying anisotropic thermal Kapton according to claim 1, it is characterised in that:Institute The synthetic method of the polyamic acid stated-heat filling glue, it is characterised in that:In a kettle., a certain amount of non-matter is first added Sub- polar solvent, adds a certain amount of siliceous alicyclic diamine and inorganic nano heat filling, at room temperature again under nitrogen protection 0.5~2h of high-speed stirred, fully dissolves siliceous alicyclic diamine and inorganic nano heat filling is uniformly dispersed;By aromatic series four Acid dianhydride adds reactor, and 5~24h of stirring reaction at 0~5 DEG C in batches in 0.5~5h, obtains viscosity and is more than The polyamic acid of 40000mPas-heat filling solution, is put into holding vessel, is stored under -10 DEG C of low temperature.
9. Graphene fabric-modifying anisotropic thermal Kapton according to claim 1, it is characterised in that:Institute The preparation method of the Graphene fabric laminated board stated:Nickel wire reticulated is first processed through the removal of impurities of watery hydrochloric acid surface, is then placed in stone H in English tube furnace2900~1100 DEG C of insulation a period of times are heated under stream atmosphere, then graphene growth catalyst is introduced To quartz ampoule, to be cooled to room temperature rapidly after 0.5~1h of reaction, then etching removal Ni is that can obtain Graphene fabric, by stone Black alkene fabric is layering, and the Graphene fabric laminated board with 3D network structures is obtained;
Described graphene growth catalyst is CH that volume flow ratio is the ︰ 1 of 4 ︰ 1~24、H2Gaseous mixture;Described rate of temperature fall It is 150~220 DEG C/min.
10. Graphene fabric-modifying anisotropic thermal Kapton according to claim 1, it is characterised in that: Described hot-imide process for first under 70~90 DEG C of vacuum be incubated 1~2h abjection solvent, then 110~130 DEG C, 140~160 DEG C, 170~190 DEG C, 220~240 DEG C, 270~290 DEG C, 0.5~1h of each insulation makes it at a temperature of 320~340 DEG C Complete hot-imide, thermoplasticity anisotropic thermal Kapton is obtained after hot-imide through cutting edge winding.
Graphene fabric-modifying anisotropic thermal Kapton described in 11. claims 1 prepare it is high heat radiation aluminium-based Application in copper-clad plate, application process is:By anisotropic thermal Kapton, 110~130 DEG C are hot-pressed onto on aluminium sheet, and Copper Foil is covered with, hot press compacting, pressing process is then fed into:110~130 DEG C/0.5~1h, 140~160 DEG C, 170~190 DEG C, 220~240 DEG C of each 1~2h, compacting finishes, and cools down, and takes out, and is cut out by given size.
12. include the high heat radiation aluminium-based of the Graphene fabric-modifying anisotropic thermal Kapton described in claim 1 Copper-clad plate.
CN201710107734.3A 2017-02-27 2017-02-27 A kind of graphene fabric-modifying anisotropic thermal Kapton, preparation method and application Active CN106867256B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710107734.3A CN106867256B (en) 2017-02-27 2017-02-27 A kind of graphene fabric-modifying anisotropic thermal Kapton, preparation method and application

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710107734.3A CN106867256B (en) 2017-02-27 2017-02-27 A kind of graphene fabric-modifying anisotropic thermal Kapton, preparation method and application

Publications (2)

Publication Number Publication Date
CN106867256A true CN106867256A (en) 2017-06-20
CN106867256B CN106867256B (en) 2019-10-18

Family

ID=59167836

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710107734.3A Active CN106867256B (en) 2017-02-27 2017-02-27 A kind of graphene fabric-modifying anisotropic thermal Kapton, preparation method and application

Country Status (1)

Country Link
CN (1) CN106867256B (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108264766A (en) * 2018-01-25 2018-07-10 无锡创彩光学材料有限公司 A kind of preparation method of Kapton
CN109764321A (en) * 2019-03-08 2019-05-17 南京理工大学 A kind of cooling structure of LED illumination lamp and preparation method thereof
US20200203162A1 (en) * 2018-12-21 2020-06-25 National Chung-Shan Institute Of Science And Technology Method for fabricating ultra-thin graphite film on silicon carbide substrate
TWI707906B (en) * 2018-04-13 2020-10-21 安炬科技股份有限公司 Graphene thermostatic fabric
CN114349963A (en) * 2021-12-30 2022-04-15 中国航空制造技术研究院 In-situ polymerization preparation method of thermoplastic polyimide prepreg monomer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103665866A (en) * 2013-12-16 2014-03-26 宁波今山电子材料有限公司 Preparation method for graphene-polyimide composite film
CN103923330A (en) * 2014-04-30 2014-07-16 山东中天华德科技发展有限公司 Method for preparing high-thermal conductivity polyimide/magnesium oxide composite film
CN104130576A (en) * 2014-07-03 2014-11-05 苏州世优佳电子科技有限公司 Graphene heat-conduction film
CN104844801A (en) * 2015-04-23 2015-08-19 东华大学 Silicon-containing polyimide copper-clad plate and preparation method thereof
CN106189229A (en) * 2016-08-20 2016-12-07 张伟 Graphene conductive heat conduction thin-film material of doping metals alloy and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103665866A (en) * 2013-12-16 2014-03-26 宁波今山电子材料有限公司 Preparation method for graphene-polyimide composite film
CN103923330A (en) * 2014-04-30 2014-07-16 山东中天华德科技发展有限公司 Method for preparing high-thermal conductivity polyimide/magnesium oxide composite film
CN104130576A (en) * 2014-07-03 2014-11-05 苏州世优佳电子科技有限公司 Graphene heat-conduction film
CN104844801A (en) * 2015-04-23 2015-08-19 东华大学 Silicon-containing polyimide copper-clad plate and preparation method thereof
CN106189229A (en) * 2016-08-20 2016-12-07 张伟 Graphene conductive heat conduction thin-film material of doping metals alloy and preparation method thereof

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
刘达: "《含硅二胺单体合成及应用研究》", 《中国优秀硕士学位论文全文数据库工程科技Ⅰ辑》 *
周文英等: "《导热高分子材料》", 30 April 2014, 国防工业出版社 *
巩金瑞: "《三维石墨烯复合材料的制备及导热性能研究》", 《《中国优秀硕士学位论文全文数据库工程科技Ⅰ辑》》 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108264766A (en) * 2018-01-25 2018-07-10 无锡创彩光学材料有限公司 A kind of preparation method of Kapton
TWI707906B (en) * 2018-04-13 2020-10-21 安炬科技股份有限公司 Graphene thermostatic fabric
US20200203162A1 (en) * 2018-12-21 2020-06-25 National Chung-Shan Institute Of Science And Technology Method for fabricating ultra-thin graphite film on silicon carbide substrate
US11049717B2 (en) * 2018-12-21 2021-06-29 National Chung-Shan Institute Of Science And Technology Method for fabricating ultra-thin graphite film on silicon carbide substrate from siloxane-coupling-group-containing polyamic acid solution
CN109764321A (en) * 2019-03-08 2019-05-17 南京理工大学 A kind of cooling structure of LED illumination lamp and preparation method thereof
CN114349963A (en) * 2021-12-30 2022-04-15 中国航空制造技术研究院 In-situ polymerization preparation method of thermoplastic polyimide prepreg monomer

Also Published As

Publication number Publication date
CN106867256B (en) 2019-10-18

Similar Documents

Publication Publication Date Title
CN106867256B (en) A kind of graphene fabric-modifying anisotropic thermal Kapton, preparation method and application
CN109650892B (en) High-thermal-conductivity graphene film and preparation method thereof
CN108455580A (en) A kind of graphene film weblike material and preparation method thereof
CN110272552B (en) Preparation method of polyimide film for graphite sintering
CN102558860B (en) Dimensionally-stable polyimide film and preparation method thereof
CN109762497A (en) A kind of insulating heat-conductive glue film for heating device and its manufactured heating device
TWI638772B (en) Polyimide film for calcination graphitization and method for producing graphite film
CN105113088A (en) High thermal conductivity polyimide-based graphite nanometer fiber film material and preparation method thereof
CN113621155B (en) Preparation method of nano-micron boron nitride/polyimide composite material
CN105199619B (en) Aluminum-based copper-clad plate high-heat-conductivity glue membrane preparation method
Li et al. Paving 3D interconnected Cring-C3N4@ rGO skeleton for polymer composites with efficient thermal management performance yet high electrical insulation
CN202029463U (en) Metal base copper-clad plate with low thermal resistance and high insulation property
KR102077766B1 (en) GRAPHITE FILM, preparing method thereof, and heat emission structure including the same
JP6267780B2 (en) Thermally conductive resin and thermal interface material containing the same
CN112919452A (en) High-heat-flux graphene-polyimide carbonized film and preparation method and application thereof
CN110775969B (en) Graphene composite membrane and preparation method thereof
CN112708274A (en) Heat-conducting insulating polyimide film and preparation method thereof
CN208572570U (en) A kind of PTFE base PCB copper-clad plate that graphene is modified
CN106751711A (en) Fluorine substituted ethylene based polyalcohol resin combination, prepreg and laminate
CN110370750A (en) Highly heat-conductive copper-clad plate and preparation method
CN114479455A (en) High-thermal-conductivity polyimide film with good film forming property and preparation method thereof
CN108504095A (en) A kind of preparation method of novel high heat-conductivity conducting graphite composite film
CN102529222B (en) High-insulation metal-based copper-clad plate with low thermal resistance and preparation method thereof
CN113105657A (en) High-orientation and high-power graphene heating film and preparation method and application thereof
KR20160016982A (en) Boronnitride dispersion composition using a polyamic acid as a dispersing agent

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant