CN106866148A - The SiC of SiC nanowire In-sltu reinforcementf/ SiC ceramic matrix composite material and preparation method thereof - Google Patents

The SiC of SiC nanowire In-sltu reinforcementf/ SiC ceramic matrix composite material and preparation method thereof Download PDF

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CN106866148A
CN106866148A CN201611182565.1A CN201611182565A CN106866148A CN 106866148 A CN106866148 A CN 106866148A CN 201611182565 A CN201611182565 A CN 201611182565A CN 106866148 A CN106866148 A CN 106866148A
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nanowire
ceramic matrix
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matrix composite
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CN106866148B (en
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余金山
周新贵
王洪磊
曾穗娟
殷刘彦
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National University of Defense Technology
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Abstract

The invention discloses a kind of SiC of SiC nanowire In-sltu reinforcementf/ SiC ceramic matrix composite material and preparation method thereof, the composite includes SiC fiber preforms, SiC nanowire and SiC ceramic matrix, the SiC nanowire growth in situ is mutually wound in network structure in the fiber surface of the SiC fiber preforms between the SiC nanowire;The SiC ceramic matrix is filled in the hole of the SiC fiber preforms.Preparation method includes:(1)Surface chemical modification is processed;(2)Loading catalyst;(3)Chemical vapor deposition;(4)Precursor infiltration and pyrolysis.The SiC of the SiC nanowire In-sltu reinforcementf/ SiC ceramic matrix composite material have the advantages that SiC nanowire be evenly distributed do not reunite and be well combined with SiC fibers, obdurability is good, consistency is high, preparation method process is simple, equipment requirement are low, environmentally friendly, technique versatility is good, and it is high and controllable that SiC nanowire introduces volume fraction.

Description

The SiC of SiC nanowire In-sltu reinforcementf/ SiC ceramic matrix composite material and preparation method thereof
Technical field
The present invention relates to ceramic matric composite field, more particularly to a kind of SiC of SiC nanowire In-sltu reinforcementf/SiC Composite and preparation method thereof.
Background technology
Continuous SiC fiber strengthens SiC bases(SiCf/SiC)Composite have low-density, high specific strength, high ratio modulus and The excellent properties such as low chemism, additionally with the characteristic such as high resistivity and low neutron irradiation induced activity, Aero-Space, The field such as fusion reactor and thermal structure absorbing material has broad application prospects.
However, SiCf/ SiC ceramic matrix composite material is applied to high-temperature structural components, and its mechanical property need further raising.It is special It is not its fracture toughness, compared to materials such as high temperature alloys, also there is a big difference.SiCfThe relatively low fracture toughness of/SiC ceramic matrix composite material The short slab that its is applied in advanced field as restriction.Due to SiCf/ SiC ceramic matrix composite material is wide in Aero-Space and national defence Application prospect, to improve the mechanical property of the material, academia has carried out substantial amounts of basic research in recent years.These researchs at present It is concentrated mainly on raising fibre property, optimization composite material preparation process, improves the aspects such as composite property stability, and selects More effective reinforcement is used, the research for improving composite obdurability in particular with the nano material of strong mechanical performance is few.
SiC nanowire is become both at home and abroad with its excellent mechanical property and its application prospect wide in the composite Investigation of materials focus.The maximum deflection intensity of SiC nanowire is 53.4 GPa, is the twice of micron whisker.In addition SiC nanowire Also there is superplasticity at room temperature.The SiC nanowire of proper content is introduced in the composite, is expected to improve composite Intensity, fracture toughness etc., have broad application prospects.
SiC nanowire and SiCf/ SiC ceramic matrix composite material has identical chemical composition, thus in the absence of reinforcement and matrix Between physical chemistry consistency problem.Therefore, SiC nanowire is SiCfThe ideal nanometer enhancing of/SiC ceramic matrix composite material Body.But there is very strong Van der Waals force between nano material, add the huge specific surface area of monodimension nanometer material and very high Draw ratio, thus be readily formed winding it is agglomerating or reunite, significantly lower its enhancing effect, while being also difficult in the composite Introduce the monodimension nanometer material reinforcement of high-volume fractional.Therefore, using prepared by the method for directly addition nanometer reinforcement answering Condensation material performance is still not fully up to expectations.
The content of the invention
The technical problem to be solved in the present invention is to overcome the deficiencies in the prior art, there is provided a kind of SiC nanowire is evenly distributed Do not reunite and be well combined with SiC fibers, the SiC of the SiC nanowire In-sltu reinforcement that obdurability is good, consistency is highf/ SiC is combined Material, correspondingly provides a kind of SiC nanowire and introduces that high and controllable, process is simple, equipment requirement be low, environmentally friendly, technique versatility The SiC of good SiC nanowire In-sltu reinforcementfThe preparation method of/SiC ceramic matrix composite material.
In order to solve the above technical problems, the present invention uses following technical scheme:
A kind of SiC of SiC nanowire In-sltu reinforcementf/ SiC ceramic matrix composite material, including SiC fiber preforms, SiC nanowire and SiC Ceramic matrix, the SiC nanowire growth in situ in the fiber surface of the SiC fiber preforms, between the SiC nanowire Mutually it is wound in network structure;The SiC ceramic matrix is filled in the hole of the SiC fiber preforms.
The SiC of above-mentioned SiC nanowire In-sltu reinforcementf/ SiC ceramic matrix composite material, it is preferred that the SiC nanowire accounts for described The SiC of SiC nanowire In-sltu reinforcementfThe weight/mass percentage composition of/SiC ceramic matrix composite material is 2%~4.2%.
The SiC of above-mentioned SiC nanowire In-sltu reinforcementf/ SiC ceramic matrix composite material, it is preferred that the SiC ceramic matrix accounts for institute State the SiC of SiC nanowire In-sltu reinforcementfThe weight/mass percentage composition of/SiC ceramic matrix composite material is 60%~70%.
Used as a total inventive concept, the present invention also provides a kind of SiC of SiC nanowire In-sltu reinforcementf/ SiC is combined The preparation method of material, comprises the following steps:
(1)Surface chemical modification is processed:During SiC fiber preforms impregnated in into organic chemistry impregnating agent, make on SiC fibrous matrixes Loading organo-functional group, obtains the SiC fiber preforms of surface chemical modification;
(2)Loading catalyst:By step(1)The SiC fiber preforms of the surface chemical modification of gained impregnated in metal ion and urge In agent precursor solution, make the organo-functional group adsorbing metal ions catalyst, obtain being loaded with the SiC fibers of catalyst Prefabricated component;
(3)Chemical vapor deposition:By the first SiC ceramic precursor and step(2)The SiC fibers for being loaded with catalyst of gained are pre- Product is placed in chemical vapor deposition stove, and chemical vapor deposition is carried out under inert gas shielding, makes to be loaded with the SiC of catalyst Growth in situ goes out SiC nanowire on fiber preform, obtains the SiC fiber preforms of SiC nanowire In-sltu reinforcement;
(4)Precursor infiltration and pyrolysis:By step(3)The SiC fiber preforms of the SiC nanowire In-sltu reinforcement of gained are placed in second SiC ceramic precursor carries out vacuum impregnation, is crosslinked after taking-up and is cracked, repeated impregnations-crosslinking-cracking process, until SiC The enhanced SiC fiber preforms of nano-thread in-situ are less than 1% compared to last dipping-crosslinking-cracking process weightening, obtain SiC The enhanced SiC of nano-thread in-situf/ SiC ceramic matrix composite material.
The SiC of above-mentioned SiC nanowire In-sltu reinforcementfThe preparation method of/SiC ceramic matrix composite material, it is preferred that the step (1)In, the organic chemistry impregnating agent is the suspension that ethylenediamine tetra-acetic acid and dimethylformamide are prepared, the ethylenediamine tetraacetic Acetic acid is 1: 8~10 with the mass ratio of dimethylformamide.
The SiC of above-mentioned SiC nanowire In-sltu reinforcementfThe preparation method of/SiC ceramic matrix composite material, it is preferred that the step (2)In, the metal ion catalyst precursor solution includes the nitrate aqueous solution containing Fe or the nitrate aqueous solution containing Ni; In the metal ion catalyst precursor solution, the concentration of metal ion is 0.05 mol/l~2 mol/l.
The SiC of above-mentioned SiC nanowire In-sltu reinforcementfThe preparation method of/SiC ceramic matrix composite material, it is preferred that the step (1)In, the process conditions of the dipping are:Dipping temperature is 100 DEG C~120 DEG C, and dip time is 5h~7h;The step (2)In, the process conditions of the dipping are:Dipping temperature is 50 DEG C~70 DEG C, and dip time is 3h~5h.
The SiC of above-mentioned SiC nanowire In-sltu reinforcementfThe preparation method of/SiC ceramic matrix composite material, it is preferred that the step (3)In, the first SiC ceramic precursor includes Polycarbosilane, poly- silicon-carbon silane or polymethyl silicane, the chemical vapor deposition Long-pending depositing temperature is 1250 DEG C~1400 DEG C, and sedimentation time is 1h~2h.
The SiC of above-mentioned SiC nanowire In-sltu reinforcementfThe preparation method of/SiC ceramic matrix composite material, it is preferred that the step (4)In, the second SiC ceramic precursor includes the liquid Polycarbosilane containing vinyl;The vacuum-impregnated time is 10h ~12h, vacuum is 1000Pa;The pressure of the crosslinking is 1MPa~2MPa, and temperature is 300 DEG C, and the time is 5h~8h;It is described Cracking atmosphere is nitrogen atmosphere, and temperature is 1100 DEG C, and pyrolysis time is 1h~2h.
The SiC of above-mentioned SiC nanowire In-sltu reinforcementfThe preparation method of/SiC ceramic matrix composite material, it is preferred that the step (1)Before, also pre-processed including SiC fibrous matrixes are carried out into surface glue:The SiC fibrous matrixes are placed in air and are heated To 400 DEG C~500 DEG C, 1h~2h, supersound washing 1h~2h in ethanol are incubated.
Compared with prior art, the advantage of the invention is that:
1st, the SiC of SiC nanowire In-sltu reinforcement of the inventionf/ SiC ceramic matrix composite material, SiC nanowire growth in situ is in SiC fibers The fiber surface of prefabricated component, is well combined with SiC fibers;Network structure is mutually wound between SiC nanowire, not agglomerating, energy It is adequately filled in the hole between fiber, thus SiC nanowire is evenly distributed in the inside of SiC fiber preforms, institute's shape Into SiC nanowire In-sltu reinforcement SiCf/ SiC ceramic matrix composite material obdurability is good, and especially fracture toughness is greatly improved; In addition, SiC ceramic matrix is also filled in the hole of SiC fiber preforms, the consistency of the composite is further increased And intensity.
2nd, the SiC of SiC nanowire In-sltu reinforcement of the inventionfThe preparation method of/SiC ceramic matrix composite material, using growth in situ Method introduces SiC nanowire in SiC fiber preforms, and compared to mechanical mixing, in situ synthesis have obvious advantage, can With the SiC nanowire that to introduce content in the base controllable, well dispersed.Additionally, growth in situ method also contribute to fiber- Bond strength between SiC nanometers, contributes to the secondary extraction of the SiC nanowire during spike protein gene, so as to consume more Energy, this is highly beneficial to improving the fracture toughness of composite.SiC nanowire is mutually introduced at ceramic matric composite interface, Growth in situ SiC nanowire is combined to SiCf/SiC Fiber In Composite Materials/basal body interface and played a role in improving, so that right SiCf/SiC composites play Strengthening and Toughening effect.Also, the present invention is first using organic prior to the loading of SiC fibrous matrixes surface Functional group, recycles organo-functional group to the suction-operated loading catalyst of catalyst ion, with direct impregnation catalyst method phase Than in this way not only catalyst that is more and being evenly distributed, and the catalysis for loading can be obtained in SiC fiber surfaces Agent is difficult removal in subsequent rinse cycle, therefore, higher SiC nanometers can be introduced by follow-up chemical vapor deposition Line, up to more than 4.2wt%.Subsequently with precursor dip transformation method(PIP)Technique is combined, and can introduce SiC ceramic matrix, enters one Step improves the consistency of composite.
3rd, the SiC of SiC nanowire In-sltu reinforcement of the inventionfThe preparation method of/SiC ceramic matrix composite material, SiC fiber preforms The SiC nanowire content of upper introducing is higher and controllable, and by adjusting catalyst concn, CVD technological temperatures, carrier gas flux ratio etc. Parameter can control the pattern and yield of SiC nanowire.
4th, the SiC of SiC nanowire In-sltu reinforcement of the inventionfThe preparation method of/SiC ceramic matrix composite material, technical process is simple, Equipment requirement is low, and process equipment used mainly has vacuum impregnation kettle, resistance furnace, quartz ampoule etc., and its process route is simple and easy to apply, It is environmentally safe in preparation process.
Brief description of the drawings
Fig. 1 is the step of the embodiment of the present invention 1(4)The chemical vapor deposition unit schematic diagram of middle use.
Fig. 2 is the SEM shape appearance figures of SiC fiber stereo fabrics after loading catalyst in the embodiment of the present invention 1.
Fig. 3 is the SiC of SiC nanowire In-sltu reinforcement prepared by the embodiment of the present invention 1fThe optics of/SiC ceramic matrix composite material shines Piece.
Fig. 4 is the SiC of SiC nanowire In-sltu reinforcement prepared by the embodiment of the present invention 1fThe SEM patterns of/SiC ceramic matrix composite material Figure.
Fig. 5 is the SiC of SiC nanowire In-sltu reinforcement prepared by the embodiment of the present invention 1fThe fracture SEM of/SiC ceramic matrix composite material Shape appearance figure;Wherein, c figures are to amplify 20000 times, and d figures are to amplify 50000 times.
Fig. 6 is the SEM shape appearance figures of silicon carbide fibre stereo fabric prepared by comparative example 1.
Fig. 7 is the SEM of the silicon carbide fibre stereo fabric of silicon carbide nanometer line In-sltu reinforcement prepared by comparative example of the present invention 2 Surface topography map;Wherein, a figures are to amplify 800 times, and b figures are to amplify 5000 times.
Fig. 8 is the SEM shape appearance figures of silicon carbide fibre stereo fabric prepared by comparative example of the present invention 3;Wherein, a figures are to amplify 15000 times, b figures are to amplify 2000 times.
Specific embodiment
The present invention is described further below in conjunction with Figure of description and specific preferred embodiment, but not therefore and Limit the scope of the invention.
Material and instrument employed in following examples are commercially available.
Embodiment 1:
A kind of SiC of SiC nanowire In-sltu reinforcement of the inventionf/ SiC ceramic matrix composite material, including SiC fiber preforms, SiC nanometer Line and SiC ceramic matrix, the SiC nanowire growth in situ are described in the fibrous matrix surface of the SiC fiber preforms Network structure is mutually wound between SiC nanowire;The SiC ceramic matrix is filled in the hole of the SiC fiber preforms In.
In the present embodiment, SiC fiber preforms are that the three-dimensional four-way solid of the type SiC fibrages of domestic KD- II is knitted Thing, the weight/mass percentage composition of SiC nanowire is 4.2%.The weight/mass percentage composition of SiC ceramic matrix is 65%.
A kind of SiC of the SiC nanowire In-sltu reinforcement of above-mentioned the present embodimentfThe preparation method of/SiC ceramic matrix composite material, including Following steps:
(1)Pretreatment:The three-dimensional four-way stereo fabric of the prefabricated type SiC fibers of domestic KD- II is placed in Muffle furnace, in sky Be heated to 400 DEG C in gas, be incubated 1h, in ethanol supersound washing 1h to remove surface glue, finally in atmosphere in 60 Dried at DEG C, the SiC fiber stereo fabrics for being pre-processed;
(2)Surface chemical modification is processed:Ethylenediamine tetra-acetic acid is weighed by 1: 10 mass ratio(Powder)And dimethylformamide(Liquid State), both chemicals are hybridly prepared into suspension, and stirred with glass bar.With impregnation steps under the suspension (1)The SiC fiber stereo fabrics of the pretreatment of gained, dipping temperature is 110 DEG C, and soaking time is 6h, makes the SiC of pretreatment fine Dimension stereo fabric surface loading organo-functional group, then takes out SiC fiber stereo fabrics, and floated with deionized water from suspension Wash, finally obtain the SiC fiber stereo fabrics of surface chemical modification in 60 DEG C of drying in atmosphere;
(3)Loading catalyst:Ferric nitrate is weighed, it is 0.1mol/l's that ferric nitrate be dissolved in deionized water preparation to be obtained concentration containing Fe The catalyst precursor aqueous solution, with the catalyst precursor aqueous impregnation step(2)The SiC of the surface chemical modification of gained is fine Dimension stereo fabric, dipping temperature is 60 DEG C, and soaking time is 4h, the SiC is then taken out from the catalyst precursor aqueous solution fine Dimension stereo fabric, and rinsed with deionized water, finally obtain being loaded with the SiC fibers of catalyst in 60 DEG C of drying in atmosphere Stereo fabric;
(4)Chemical vapor deposition:As shown in figure 1, weighing 5.0g Polycarbosilanes 5(Mw=2000, Tm=180 DEG C)It is placed in corundum In bateau 4, the corundum bateau 4 and step of Polycarbosilane 5 are will be equipped with(3)The SiC fiber solids for being loaded with catalyst of gained are knitted Thing is together placed in a cylinder graphite boat 2, wherein the SiC fiber stereo fabrics for being loaded with catalyst are placed in the cylinder graphite boat 2 Porous graphite plate 3 top(The SiC fiber stereo fabrics for being loaded with catalyst are eliminated in figure), then by the cylinder graphite Boat 2 is placed in quartz ampoule 1, is continually fed into N2Gas, and quartz ampoule 1 is heated using calandria 6, make to be loaded with catalyst SiC fiber stereo fabrics in N21300 DEG C are warming up under atmosphere protection and 1h is incubated, then room temperature is down in nitrogen atmosphere(N2 Throughput is 10sccm), that is, chemical vapor deposition processes are completed, make to be loaded with the surface of the SiC fiber stereo fabrics of catalyst Growth in situ goes out SiC nanowire, obtains the SiC fiber stereo fabrics of SiC nanowire In-sltu reinforcement.
(5)Precursor infiltration and pyrolysis:By step(4)The SiC fiber stereo fabrics of the SiC nanowire In-sltu reinforcement of gained are put It is placed in vacuum impregnation tank after entering impregnation box, is evacuated to pressure inside the tank and is reduced to 1000Pa, pours into the poly- carbon of liquid containing vinyl Silane(LPVCS), LPVCS is flowed into impregnation box to the SiC fiber stereo fabrics for being totally submerged the SiC nanowire In-sltu reinforcement, 10h is impregnated under vacuum.Taken out after the completion of dipping and be placed in graphite jig, it is 2MPa that pressure is adjusted in temperature and pressure machine, Crosslinking curing is carried out, the time is 6h.It is put into pyrolysis furnace after the completion of crosslinking curing, is passed through N2Protect and be warming up to 1100 DEG C, when Between be 1h, into inside SiC fiber stereo fabrics LPVCS occur Pintsch process, generate SiC ceramic matrix.Repeated impregnations-friendship Connection-cracking process, until the SiC fibers stereo fabric of SiC nanowire In-sltu reinforcement is compared to last time dipping-crosslinking-cracking Process weightening is less than 1%, obtains the SiC of SiC nanowire In-sltu reinforcementf/ SiC ceramic matrix composite material.
The present embodiment is by step(2)And step(3)What is obtained after treatment is loaded with the SiC fiber stereo fabrics of catalyst Microscopic appearance as shown in Fig. 2 as seen from the figure, by step(2)With(3)Afterwards, SiC fibrous matrixes surface is loaded with and is uniformly distributed Catalyst, catalyst is connected with the organo-functional group on SiC fibre bundles surface, can not be removed by water rinsing.
The present embodiment is through step(4)Macroscopical shape of the SiC fiber stereo fabrics of the SiC nanowire In-sltu reinforcement that treatment is obtained Looks are as shown in Figure 3.As seen from the figure, covered between the SiC fiber stereo fabric surfaces of SiC nanowire In-sltu reinforcement and fibre gap There are a large amount of white fluffy materials, the white fluffy material is silicon carbide nanometer line.The present embodiment is through step(4)Process The microscopic appearance of the SiC fiber stereo fabrics of the SiC nanowire In-sltu reinforcement for arriving as shown in figure 4, as seen from the figure, SiC fiber bases Substantial amounts of SiC nanowire is evenly distributed between the surface of body and fiber, network structure is mutually wound between SiC nanowire. Through measuring and calculating, the content of SiC nanowire is up to 4.2%.
The present embodiment is through step(5)The SiC of the SiC nanowire In-sltu reinforcement that treatment is obtainedf/ SiC ceramic matrix composite material it is microcosmic Fracture apperance is as shown in Figure 5, it is seen that between SiC fibrous matrixes(Namely in the hole of SiC fiber stereo fabrics)It is distributed with a large amount of It is wound in the SiC nanowire of network structure and the SiC ceramic matrix of bulk.
Comparative example 1:
The raw material and preparation method that this comparative example is used are substantially the same manner as Example 1, and it only difference is that:This comparative example is not Including step(2).
The silicon carbide fibre stereo fabric not carried out obtained by surface modification treatment before impregnated catalyst in this comparative example is microcosmic Pattern does not have the silicon carbide nanometer line of growth in situ as shown in fig. 6, silicon carbide fibre surface is smooth as seen from Figure 6.This says After the bright silicon carbide fibre stereo fabric impregnated catalyst for not carrying out surface chemical modification treatment, its loading catalyst with It is rinsed off in deionized water rinse cycle afterwards, thus in follow-up chemical vapor deposition, because no catalyst is made With, it is impossible to grow silicon carbide nanometer line.And in embodiment 1, by the silicon carbide fibre stereo fabric that surface chemical modification is processed After impregnated catalyst, catalyst is evenly distributed by being combined with the effect of the organic group in surface, even if being rinsed also not through deionized water Can removal.
Comparative example 2:
The raw material and preparation method that this comparative example is used are substantially the same manner as Example 1, and it only difference is that:This comparative example is not Including step(2), and in loading catalyst step, the silicon carbide fibre is taken out from the catalyst precursor aqueous solution three-dimensional After fabric, rinsed without deionized water, directly in atmosphere in 60 DEG C of drying.
Silicon carbide fibre stereo fabric microscopic appearance obtained by this comparative example preparation method by Fig. 7 as shown in fig. 7, can be seen Go out, the silicon carbide nanometer line amount on silicon carbide fibre surface is few and skewness, be distributed in needle prick shape.And in embodiment 1, by scheming The silicon carbide nanometer line amount being distributed between 4 fibrous matrixes that can be seen that silicon carbide fibre stereo fabric is significantly more evenly, And network structure is mutually wound between silicon carbide nanometer line.
Comparative example 3:
The raw material and preparation method that this comparative example is used are substantially the same manner as Example 1, and it only difference is that:This comparative example Step(4)Liquid Polycarbosilanes of the middle use 5.0g containing vinyl(LPVCS)Instead of 5.0g Polycarbosilanes as source during CVD Material.
The result of this comparative example as shown in figure 8, fiber surface obtain be flakey sedimentary, fiber peripheral is also in addition Spherical material of the diameter in several microns is distributed with, this spherical material surface is also flakey.Without SiC nanowire generation. This spherical material is not suitable as SiCfActiveness and quietness phase between/SiC ceramic matrix composite material fiber and matrix.
The above is only the preferred embodiment of the present invention, and protection scope of the present invention is not limited merely to above-mentioned implementation Example.All technical schemes belonged under thinking of the present invention belong to protection scope of the present invention.It is noted that for the art Those of ordinary skill for, improvements and modifications under the premise without departing from the principles of the invention, these improvements and modifications also should It is considered as protection scope of the present invention.

Claims (10)

1. a kind of SiC of SiC nanowire In-sltu reinforcementf/ SiC ceramic matrix composite material, it is characterised in that including SiC fiber preforms, SiC Nano wire and SiC ceramic matrix, the SiC nanowire growth in situ are described in the fiber surface of the SiC fiber preforms Network structure is mutually wound between SiC nanowire;The SiC ceramic matrix is filled in the hole of the SiC fiber preforms In.
2. the SiC of SiC nanowire In-sltu reinforcement according to claim 1f/ SiC ceramic matrix composite material, it is characterised in that described SiC nanowire accounts for the SiC of the SiC nanowire In-sltu reinforcementfThe weight/mass percentage composition of/SiC ceramic matrix composite material is 2%~4.2%.
3. the SiC of SiC nanowire In-sltu reinforcement according to claim 1 and 2f/ SiC ceramic matrix composite material, it is characterised in that institute State the SiC that SiC ceramic matrix accounts for the SiC nanowire In-sltu reinforcementfThe weight/mass percentage composition of/SiC ceramic matrix composite material be 60%~ 70%。
4. a kind of SiC of SiC nanowire In-sltu reinforcementfThe preparation method of/SiC ceramic matrix composite material, comprises the following steps:
(1)Surface chemical modification is processed:During SiC fiber preforms impregnated in into organic chemistry impregnating agent, make on SiC fibrous matrixes Loading organo-functional group, obtains the SiC fiber preforms of surface chemical modification;
(2)Loading catalyst:By step(1)The SiC fiber preforms of the surface chemical modification of gained impregnated in metal ion and urge In agent precursor solution, make the organo-functional group adsorbing metal ions catalyst, obtain being loaded with the SiC fibers of catalyst Prefabricated component;
(3)Chemical vapor deposition:By the first SiC ceramic precursor and step(2)The SiC fibers for being loaded with catalyst of gained are pre- Product is placed in chemical vapor deposition stove, and chemical vapor deposition is carried out under inert gas shielding, makes to be loaded with the SiC of catalyst Growth in situ goes out SiC nanowire on fiber preform, obtains the SiC fiber preforms of SiC nanowire In-sltu reinforcement;
(4)Precursor infiltration and pyrolysis:By step(3)The SiC fiber preforms of the SiC nanowire In-sltu reinforcement of gained are placed in second SiC ceramic precursor carries out vacuum impregnation, is crosslinked after taking-up and is cracked, repeated impregnations-crosslinking-cracking process, until SiC The enhanced SiC fiber preforms of nano-thread in-situ are less than 1% compared to last dipping-crosslinking-cracking process weightening, obtain SiC The enhanced SiC of nano-thread in-situf/ SiC ceramic matrix composite material.
5. the SiC of SiC nanowire In-sltu reinforcement according to claim 4fThe preparation method of/SiC ceramic matrix composite material, its feature It is, the step(1)In, the organic chemistry impregnating agent is the suspension that ethylenediamine tetra-acetic acid and dimethylformamide are prepared Liquid, the ethylenediamine tetra-acetic acid is 1: 8~10 with the mass ratio of dimethylformamide.
6. the SiC of SiC nanowire In-sltu reinforcement according to claim 5fThe preparation method of/SiC ceramic matrix composite material, its feature It is, the step(2)In, the metal ion catalyst precursor solution includes containing the nitrate aqueous solution of Fe or containing Ni's Nitrate aqueous solution;In the metal ion catalyst precursor solution, the concentration of metal ion is 0.05 mol/l~2 mol/l。
7. the SiC of the SiC nanowire In-sltu reinforcement according to any one of claim 4~6fThe preparation of/SiC ceramic matrix composite material Method, it is characterised in that the step(1)In, the process conditions of the dipping are:Dipping temperature is 100 DEG C~120 DEG C, leaching The stain time is 5h~7h;The step(2)In, the process conditions of the dipping are:Dipping temperature is 50 DEG C~70 DEG C, during dipping Between be 3h~5h.
8. the SiC of the SiC nanowire In-sltu reinforcement according to any one of claim 4~6fThe preparation of/SiC ceramic matrix composite material Method, it is characterised in that the step(3)In, the first SiC ceramic precursor include Polycarbosilane, poly- silicon-carbon silane or Polymethyl silicane, the depositing temperature of the chemical vapor deposition is 1250 DEG C~1400 DEG C, and sedimentation time is 1h~2h.
9. the SiC of the SiC nanowire In-sltu reinforcement according to any one of claim 4~6fThe preparation of/SiC ceramic matrix composite material Method, it is characterised in that the step(4)In, the second SiC ceramic precursor includes the poly- carbon silicon of liquid containing vinyl Alkane;The vacuum-impregnated time is 10h~12h, and vacuum is 1000Pa;The pressure of the crosslinking is 1MPa~2MPa, temperature It is 300 DEG C to spend, and the time is 5h~8h;The cracking atmosphere is nitrogen atmosphere, and temperature is 1100 DEG C, and pyrolysis time is 1h~2h.
10. the SiC of the SiC nanowire In-sltu reinforcement according to any one of claim 4~6fThe preparation of/SiC ceramic matrix composite material Method, it is characterised in that the step(1)Before, also pre-processed including SiC fibrous matrixes are carried out into surface glue:Will be described SiC fibrous matrixes are placed in air and are heated to 400 DEG C~500 DEG C, are incubated 1h~2h, supersound washing 1h~2h in ethanol.
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