CN106848832A - The single bar bar end pumping pulse laser of one kind miniaturization - Google Patents
The single bar bar end pumping pulse laser of one kind miniaturization Download PDFInfo
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- CN106848832A CN106848832A CN201710270593.7A CN201710270593A CN106848832A CN 106848832 A CN106848832 A CN 106848832A CN 201710270593 A CN201710270593 A CN 201710270593A CN 106848832 A CN106848832 A CN 106848832A
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- laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02453—Heating, e.g. the laser is heated for stabilisation against temperature fluctuations of the environment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0615—Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The present invention relates to a kind of for laser ranging, irradiation, the miniaturization list bar bar end pumping pulse laser being imaged.It solves the problems, such as that conventional laser range finding, irradiation pumped at end face of semiconductor efficiency of laser are low, the angle of divergence is big, necessary temperature control.Its technical scheme is：By parts wall scroll semiconductor bar bar, coupled lens one, two, laser Effect of Back-Cavity Mirror, Nd：KGW laser crystals, angle mirror of turning back, polarizer, electro-optic Q switch, quarter wave plate, laser outgoing mirror are arranged in order along laser optical path and laser generating unit are constituted on laser body, and connect power source of semiconductor laser with wire；Temperature sensor, electrical bar, radiator fan be arranged on wall scroll semiconductor bar bar it is heat sink on, and connect power source of semiconductor laser.This end pumping pulse laser realizes the steady operation of the big temperature range of laser；Laser finished-product volume of the present invention is small, lightweight, reliability is high and efficiency high, is widely used in the fields such as laser ranging, irradiation and imaging.
Description
Technical field
The present invention relates to the single bar bar end pumping pulse laser of one kind miniaturization, it be widely used in laser ranging, irradiation,
The fields such as imaging.
Background technology
Semiconductor pumped pulse laser is laser ranging, the core component of laser irradiation, in many laser rangings, laser
Irradiation application in, it is desirable to laser range finder, irradiator small volume, it is low in energy consumption, lightweight, exempt from temperature control.Due to early stage semiconductor bar
The more low factor of bar power, is conventionally used to the semiconductor pump laser of laser ranging, laser irradiation all using profile pump, side
Face-pumping is compared with end pumping, has the shortcomings that efficiency is low, the angle of divergence is big, and end pumping can be by pump light and zlasing mode
Preferable matching, realize pulse laser basic mode export, improve pulsed laser light beam quality, with impulse semiconductor bar bar power
Raising, the output energy of single bar bar end pumping pulse laser can meet laser ranging, the energy requirement of irradiation,
In addition, using wall scroll semiconductor bar bar end pumping Nd：The technical scheme of KGW laser crystals, using Nd：KGW laser crystals are wide
Absorption spectrum and the end pumping characteristic for absorbing depth long, reduce the temperature requirements to wall scroll semiconductor bar bar, improve laser
Wide temperature range labor aptitude, reduces laser works power consumption.
The content of the invention
The purpose of the present invention is：To solve conventional laser range finding, laser irradiation pumped at end face of semiconductor efficiency of laser
The problem of big, the necessary temperature control of the low, angle of divergence, spy provides a kind of miniaturization list bar bar end pumping pulse laser.
The present invention utilizes Nd：KGW laser crystals wide absorption spectrum and the end pumping characteristic for absorbing depth long, reduce to list
The temperature requirements of bar semiconductor bar bar, improve laser wide temperature range labor aptitude, reduce laser works power consumption.By
Can be matched with zlasing mode well in wall scroll semiconductor bar bar end pumping, be capable of achieving laser high efficiency, high light beam quality
Output.
To achieve the above object, the present invention proposes following technical scheme：One kind miniaturization single bar bar end pumping pulse swashs
Light device, the pulse laser is by wall scroll semiconductor bar bar 2, coupled lens 1, coupled lens 24, laser Effect of Back-Cavity Mirror 5, Nd：
KGW laser crystals 6, angle mirror 7 of turning back, polarizer 8, electro-optic Q switch 9, quarter wave plate 10, laser outgoing mirror 11, TEMP
Device 12, power source of semiconductor laser 13, electrical bar 14, radiator fan 15 are constituted.By parts wall scroll semiconductor bar bar 2, coupling
Lens 1, coupled lens 24, laser Effect of Back-Cavity Mirror 5, Nd：KGW laser crystals 6, angle mirror 7 of turning back, polarizer 8, electric-optically Q-switched open
Pass 9, quarter wave plate 10, laser outgoing mirror 11 are arranged in order the composition laser on laser body 1 and swash along laser optical path
Light generating unit, the laser generating unit connects power source of semiconductor laser 13 with wire；Temperature sensor 12, electrical bar 14,
Radiator fan 15 be arranged on wall scroll semiconductor bar bar 2 it is heat sink on, and connect power source of semiconductor laser 13 respectively with wire, be used for
The operating temperature of control wall scroll semiconductor bar bar 2；Wall scroll semiconductor bar bar 2, coupled lens 1, coupled lens 24 are arranged in order
Constitute Optical Maser System；Laser Effect of Back-Cavity Mirror 5, Nd：KGW laser crystals 6, mirror 7 of turning back, electro-optic Q switch 9, quarter wave plate 10,
Laser outgoing mirror 11 is arranged in order installation and constitutes laser resonant cavity.Power source of semiconductor laser 13 occurs for laser device laser
Unit and temperature sensor 12, electrical bar 14, the work of radiator fan 15 provide control and power.
Angle mirror 7 of turning back light path of turning back reduces laser volume, polarizer 8 in the laser device laser generating unit, electricity
Light Q-switch 9, quarter wave plate 10 composition it is electric-optically Q-switched or use Cr4+：The passive Q-adjusted switch in place of YAG, using Cr4+：YAG quilts
The laser resonant cavity of dynamic Q-switch can remove angle mirror 7 of turning back, and the shortening chamber that moves forward of laser outgoing mirror 11 is long, be easy to implement
More short-pulse laser is exported.
The wall scroll semiconductor bar bar 2 cools down 808nm wavelength pump modules using the quasi-continuous conduction of single bar bar encapsulation, its
Power bracket is 0-300W；Wall scroll semiconductor bar bar 2 installs fast axle compression additional, through the fast axle of wall scroll semiconductor bar bar 2 that fast axle is compressed
The angle of divergence is 0.25 ° (half-angle), and the anti-triangle of slow axis is 8 ° (half-angle)；The coupled system of coupled lens one and the composition of coupled lens two
For the slow axis of shaping wall scroll semiconductor bar bar 2, make its laser fast axle in Nd：Focused in KGW laser crystals 6, the He of coupled lens 1
Coupled lens 24 plate 808nm wide spectrum anti-reflection films.Wall scroll semiconductor bar bar 2 be encapsulated in oxygen-free copper it is heat sink on, when heat sink temperature is low
More than 25 DEG C are heated to by electrical bar 14 when 25 DEG C, are lowered the temperature by radiator fan 15 when heat sink temperature is higher than 60 DEG C
To less than 50 DEG C, control wall scroll semiconductor bar bar 2 is within the temperature range of 25 DEG C -50 DEG C.
With conventional laser crystal Nd：YAG is compared, Nd：KGW has following advantage：Near 810nm Absorption Lines,
Nd：The half width of KGW is 12nm, compares Nd：The 1.5nm of YAG is much broader, bigger absorption cross-section and broader line-width, has
Beneficial to efficient absorption LD pumping radiations and the requirement of the strict control LD temperature of reduction；Crystal doping atomicity fraction is high, during to 8%
Obvious concentration quenching effect is not found yet.The Nd：KGW laser crystals 6 use the Nd of high-dopant concentration：KGW laser crystals,
The absorption depth of crystal is improved using end pumping, laser stabilization under exempting from temperature control is easy to implement and is exported；The present invention uses Nd：KGW
Laser crystal 6, doping concentration is 2%-5%, and b axles cutting, size is 4 × 4 × 30mm, wherein two faces of 4 × 4mm are end
Face, end face coating 1.06 μm of HT, 795-830nmHT；Nd：KGW crystal 6 is heat sink by being arranged on red copper after indium foil tight
On, it is easy to Nd：The used heat of KGW laser crystals 6 is conducted to heat sink radiating in time.
Laser Effect of Back-Cavity Mirror 5 is level crossing, chamber plating film on inner face 1.06 μm of HR, 795-830nmHT, 1.06 μm of the plated film in chamber outside
HT, 795-830nmHT, laser Effect of Back-Cavity Mirror 5 are fixed on mirror holder for level crossing, and and Nd：The end face of KGW crystal 6 is parallel.
Angle mirror 7 of turning back is processed by prism of corner cube, and the transmission plane of angle mirror 7 of turning back plates 1.06 μm of HT films, angle mirror 7 of turning back
Reflecting surface plates 1.06 μm of HR films, and the angle mismachining tolerance of angle mirror 7 of turning back is less than 5 ".
Polarizer 8 is arranged on one can need rotatory polarization in the structure of optical axis rotation in laser debugging process
Piece 8 is with realization and Nd：The polarization direction of KGW crystal 6 is consistent.
Laser electro-optic Q switch 9 uses RTP electro-optic Q switchs, and RTP electro-optic Q switchs thermal adaptability is strong, meets
High/low temperature requirement, not deliquescence, switching voltage is low, is easy to laser Miniaturization Design.
Quarter wave plate 10 is arranged on one can need rotation 1/4 in the structure of optical axis rotation in laser debugging process
Wave plate 10 realizes laser maximum impulse energy.
Laser outgoing mirror 11 is level crossing, and 1.06 μm of 20% transmission of chamber plating film on inner face, chamber 1.06 μm of HT of outside plated film swash
Light device outgoing mirror 11 is fixed on mirror holder, and minute surface is vertical with optical axis.
The single bar bar end pumping pulse laser of one kind miniaturization, first takes out quarter wave plate 10 in debugging, switch on power, and opens
Dynamic wall scroll semiconductor bar bar 2, controls its temperature to make a length of 808nm of wherein cardiac wave, cuts off RTP electro-optic Q switchs, starts semiconductor
Laser power supply is powered for wall scroll semiconductor bar bar 2, and wall scroll semiconductor bar bar 2 exports 200 μ s pumping pulses, after debugging laser
Hysteroscope 5 and laser outgoing mirror 11 make laser generating unit shoot laser energy maximum；Then quarter wave plate 10 is installed additional, perpendicular to
Laser beam axis rotation quarter wave plate 10 makes laser without output, and now laser is off state；Then open that RTP is electric-optically Q-switched opens
Close, RTP electro-optic Q switchs sequential is synchronous with wall scroll semiconductor bar 2 pumping pulses of bar, postpones to be 200 μ s, further debugs laser
Device Effect of Back-Cavity Mirror 5 and laser outgoing mirror 11 obtain pulse laser output；Power source of semiconductor laser control during laser works
Temperature sensor processed 12, electrical bar 14, the work of radiator fan 15 make the output wavelength of wall scroll semiconductor bar bar 2 be operated in 808nm
Near.
The beneficial effects of the invention are as follows：The operationally interior launch wavelength of wall scroll semiconductor bar bar of the present invention and Nd：KGW
Laser crystal absorption line wider matches, and realizes the steady operation of the big temperature range of laser；Laser finished product of the present invention
Small volume, lightweight, reliability be high and efficiency high, is widely used in the fields such as laser ranging, irradiation and imaging.
Brief description of the drawings
Fig. 1, the structural representation for this miniaturization list bar bar end pumping pulse laser
In figure：1st, laser body, 2, wall scroll semiconductor bar bar, 3, coupled lens one, 4, coupled lens two, 5, laser
Effect of Back-Cavity Mirror, 6, Nd：KGW laser crystals, 7, angle mirror of turning back, 8, polarizer, 9, electro-optic Q switch, 10, quarter wave plate, 11, laser
Device outgoing mirror, 12, temperature sensor, 13, power source of semiconductor laser, 14, electrical bar, 15, radiator fan.
Specific embodiment
The invention will be further described below in conjunction with the accompanying drawings
According to Fig. 1, the single bar bar end pumping pulse laser of a kind of miniaturization that the present invention is provided is by laser machine
Body 1, wall scroll semiconductor bar bar 2, coupled lens 1, coupled lens 24, laser Effect of Back-Cavity Mirror 5, Nd：KGW laser crystals 6, folding
Return angle mirror 7, polarizer 8, electro-optic Q switch 9, quarter wave plate 10, laser outgoing mirror 11, temperature sensor 12, semiconductor laser
The part of power supply 13, electrical bar 14 and radiator fan 15 are constituted, and architectural feature is：Except laser body 1 and semiconductor laser power supply
Part outside 13 is all arranged on laser body 1, and temperature sensor 12, electrical bar 14 and radiator fan 15 are arranged on wall scroll half
On conductor bar bar 2 is heat sink, for controlling it to be worked within the temperature range of setting, wall scroll semiconductor bar bar 2, coupled lens 1,
Coupled lens 24 are arranged in order composition laser diode pump pumping system；Laser Effect of Back-Cavity Mirror 5, Nd：KGW laser crystals 6, angle mirror of turning back
7th, polarizer 8, electro-optic Q switch 9, quarter wave plate 10, laser outgoing mirror 11 along light path be arranged in order installation constitute laser it is humorous
Shake chamber.
Laser diode pump pumping system is arranged in order and is constituted by wall scroll semiconductor bar bar 2, coupled lens 1, coupled lens 24,
In Nd after the coupled lens 1 of wall scroll semiconductor bar bar 2 and the coupling of coupled lens 24：Focused in KGW laser crystals 6.
The laserresonator is from laser Effect of Back-Cavity Mirror 5, Nd：KGW laser crystals 6, angle mirror 7 of turning back, polarizer 8, electric light
Q-switch 9, quarter wave plate 10, laser outgoing mirror 11 are arranged in order composition along light path.Wherein polarizer 8, electro-optic Q switch 9,
The electric-optically Q-switched of quarter wave plate composition can also be by Cr4+：The passive Q-adjusted switch in place of YAG, using Cr4+：The passive Q-adjusted switches of YAG
Laser resonant cavity can save angle mirror 7 of turning back, and the reach shortening of laser outgoing mirror 11 chamber is long, is easy to implement more short-pulse laser
Output.
Claims (4)
1. single bar bar end pumping pulse laser is minimized, is by wall scroll semiconductor bar bar, coupled lens, laser back cavity
Mirror, Nd：KGW laser crystals, angle mirror of turning back, polarizer, electro-optic Q switch, quarter wave plate, laser outgoing mirror, TEMP
Device, power source of semiconductor laser, electrical bar and radiator fan composition, it is characterised in that：By parts wall scroll semiconductor bar bar
(2), coupled lens one (3), coupled lens two (4), laser Effect of Back-Cavity Mirror (5), Nd：KGW laser crystals (6), angle mirror of turning back
(7), polarizer (8), electro-optic Q switch (9), quarter wave plate (10), laser outgoing mirror (11) are arranged in order along laser optical path
Laser device laser generating unit is constituted on laser body (1), laser generating unit wire connects semiconductor and swashs
Light device power supply (13)；Temperature sensor (12), electrical bar (14), radiator fan (15) are installed in wall scroll semiconductor bar bar (2) warm
On heavy, and connect power source of semiconductor laser (13) respectively with wire, the work temperature for controlling wall scroll semiconductor bar bar (2)
Degree；Wall scroll semiconductor bar bar (2), coupled lens one (3), coupled lens two (4), are arranged in order composition laser diode pump pumping system；
Laser Effect of Back-Cavity Mirror (5), Nd：KGW laser crystals (6), angle mirror of turning back (7), polarizer (8), electro-optic Q switch (9), 1/4 ripple
Piece (10), laser outgoing mirror (11) are arranged in order installation and constitute laser resonant cavity.
2. pumping pulse laser according to claim 1, it is characterised in that：In the laser device laser generating unit
Polarizer (8), electro-optic Q switch (9), quarter wave plate (10) composition it is electric-optically Q-switched or use Cr4+：The passive Q-adjusted switch in place of YAG,
Using Cr4+：The laser resonant cavity of the passive Q-adjusted switches of YAG can remove angle mirror of turning back (7), and by before laser outgoing mirror (11)
Move, shortening chamber is long, be easy to implement the output of more short-pulse laser.
3. pumping pulse laser according to claim 1, it is characterised in that：The wall scroll semiconductor bar bar (2) uses
The quasi-continuous conduction cooling 808nm wavelength pump modules of single bar bar encapsulation, its power bracket is 0-300W；Wall scroll semiconductor bar bar
(2) fast axle compression is installed additional, wall scroll semiconductor bar bar (2) the fast axis divergence angle compressed through fast axle is 0.25 ° (half-angle), slow axis anti-three
Angle is 8 ° (half-angle)；The coupled system of coupled lens one (3) and the composition of coupled lens two (4) is used for shaping wall scroll semiconductor bar bar
(2) slow axis, makes its laser fast axle in Nd：Focused in KGW laser crystals (6), coupled lens one (3) and coupled lens two (4) are plated
808nm wide spectrum anti-reflection films；Wall scroll semiconductor bar bar (2) be encapsulated in oxygen-free copper it is heat sink on, when heat sink temperature be less than 25 DEG C when by
Electrical bar (14) is heated to more than 25 DEG C, and 50 DEG C are cooled to by radiator fan (15) when heat sink temperature is higher than 60 DEG C
Hereinafter, control wall scroll semiconductor bar bar (2) is within the temperature range of 25 DEG C -50 DEG C.
4. pumping pulse laser according to claim 1, it is characterised in that：The Nd：KGW laser crystals (6) are used
The Nd of high-dopant concentration：KGW laser crystals, the absorption depth of crystal is improved using end pumping, is easy to implement and is exempted to swash under temperature control
Light stabilization is exported；Using Nd：KGW laser crystals (6) dopant concentration is 2-5%, and b axles cutting, size is 4 × 4 × 30mm, wherein
Two faces of 4 × 4mm are end face, end face coating 1.06 μm of HT, 795-830nmHT；Nd：KGW laser crystals (6) are tight by indium foil
After close parcel be arranged on red copper it is heat sink on, be easy to Nd：KGW laser crystals used heat is conducted to heat sink radiating in time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710270593.7A CN106848832A (en) | 2017-04-24 | 2017-04-24 | The single bar bar end pumping pulse laser of one kind miniaturization |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710270593.7A CN106848832A (en) | 2017-04-24 | 2017-04-24 | The single bar bar end pumping pulse laser of one kind miniaturization |
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| CN106848832A true CN106848832A (en) | 2017-06-13 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108346967A (en) * | 2018-03-06 | 2018-07-31 | 西南石油大学 | A kind of integrated disc-type high power solid-state laser amplifier |
| CN109286118A (en) * | 2018-11-14 | 2019-01-29 | 西南技术物理研究所 | Small-sized narrow spaces high-peak power repeated frequency solid state laser device |
| CN109530917A (en) * | 2018-12-24 | 2019-03-29 | 大族激光科技产业集团股份有限公司 | Laser welding system and method |
| CN111166469A (en) * | 2020-03-04 | 2020-05-19 | 广州华智智业科技有限公司 | Semiconductor laser scanning unhairing system |
| CN111342331A (en) * | 2019-11-20 | 2020-06-26 | 湖北华中光电科技有限公司 | Semiconductor side pumping temperature-control-free laser |
| CN115313129A (en) * | 2022-10-11 | 2022-11-08 | 北京中星时代科技有限公司 | LD end pump pulse solid laser |
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| CN101304150A (en) * | 2008-07-02 | 2008-11-12 | 福州高意通讯有限公司 | Structure of micro-slice type electro-optical Q-switching laser |
| CN102637995A (en) * | 2012-04-25 | 2012-08-15 | 天津大学 | Dual-wavelength or multi-wavelength laser with adjustable power proportion |
| US20130247615A1 (en) * | 2010-11-30 | 2013-09-26 | Corning Incorporated | Methods of forming high-density arrays of holes in glass |
| CN204116999U (en) * | 2014-10-08 | 2015-01-21 | 北京国科欣翼科技有限公司 | Temperature control system of semiconductor laser |
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| CN101304150A (en) * | 2008-07-02 | 2008-11-12 | 福州高意通讯有限公司 | Structure of micro-slice type electro-optical Q-switching laser |
| US20130247615A1 (en) * | 2010-11-30 | 2013-09-26 | Corning Incorporated | Methods of forming high-density arrays of holes in glass |
| CN102637995A (en) * | 2012-04-25 | 2012-08-15 | 天津大学 | Dual-wavelength or multi-wavelength laser with adjustable power proportion |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108346967A (en) * | 2018-03-06 | 2018-07-31 | 西南石油大学 | A kind of integrated disc-type high power solid-state laser amplifier |
| CN109286118A (en) * | 2018-11-14 | 2019-01-29 | 西南技术物理研究所 | Small-sized narrow spaces high-peak power repeated frequency solid state laser device |
| CN109530917A (en) * | 2018-12-24 | 2019-03-29 | 大族激光科技产业集团股份有限公司 | Laser welding system and method |
| CN111342331A (en) * | 2019-11-20 | 2020-06-26 | 湖北华中光电科技有限公司 | Semiconductor side pumping temperature-control-free laser |
| CN111166469A (en) * | 2020-03-04 | 2020-05-19 | 广州华智智业科技有限公司 | Semiconductor laser scanning unhairing system |
| CN115313129A (en) * | 2022-10-11 | 2022-11-08 | 北京中星时代科技有限公司 | LD end pump pulse solid laser |
| CN115313129B (en) * | 2022-10-11 | 2023-02-21 | 北京中星时代科技有限公司 | LD end pump pulse solid laser |
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