CN106847999B - 一种太阳能发电组件的制造方法 - Google Patents
一种太阳能发电组件的制造方法 Download PDFInfo
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- CN106847999B CN106847999B CN201710109996.3A CN201710109996A CN106847999B CN 106847999 B CN106847999 B CN 106847999B CN 201710109996 A CN201710109996 A CN 201710109996A CN 106847999 B CN106847999 B CN 106847999B
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- Prior art keywords
- solar battery
- solar
- layer
- power generation
- generation component
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000010248 power generation Methods 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 28
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910003437 indium oxide Inorganic materials 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710109996.3A CN106847999B (zh) | 2017-02-28 | 2017-02-28 | 一种太阳能发电组件的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710109996.3A CN106847999B (zh) | 2017-02-28 | 2017-02-28 | 一种太阳能发电组件的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106847999A CN106847999A (zh) | 2017-06-13 |
CN106847999B true CN106847999B (zh) | 2018-08-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201710109996.3A Active CN106847999B (zh) | 2017-02-28 | 2017-02-28 | 一种太阳能发电组件的制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN106847999B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1243602A (zh) * | 1997-01-21 | 2000-02-02 | 博拉尔能源有限公司 | 制备薄硅膜的方法 |
CN103579407A (zh) * | 2012-07-26 | 2014-02-12 | 聚日(苏州)科技有限公司 | 一种太阳能电池及其制造方法 |
CN104091862A (zh) * | 2010-08-06 | 2014-10-08 | 晶元光电股份有限公司 | 半导体光电元件及其制作方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006013403A (ja) * | 2004-06-29 | 2006-01-12 | Sanyo Electric Co Ltd | 太陽電池、太陽電池モジュール、その製造方法およびその修復方法 |
TWI373849B (en) * | 2008-06-12 | 2012-10-01 | Nexpower Technology Corp | Stacked-layered thin film solar cell and manufacturing method thereof |
CN101958361A (zh) * | 2009-07-13 | 2011-01-26 | 无锡尚德太阳能电力有限公司 | 透光薄膜太阳电池组件刻蚀方法 |
KR20130011462A (ko) * | 2011-07-21 | 2013-01-30 | 삼성에스디아이 주식회사 | 태양 전지 모듈 및 그 제조 방법 |
CN103165694B (zh) * | 2011-12-09 | 2016-11-23 | 聚日(苏州)科技有限公司 | 一种太阳能电池组件及其制造方法 |
CN103247635B (zh) * | 2013-01-31 | 2015-12-23 | 中国科学院苏州纳米技术与纳米仿生研究所 | Pnp结构的激光光伏电池及其制备方法 |
CN103985780B (zh) * | 2013-02-08 | 2016-08-31 | 上海凯世通半导体股份有限公司 | 太阳能电池的制作方法 |
CN104201249A (zh) * | 2014-09-15 | 2014-12-10 | 六安市大宇高分子材料有限公司 | 一种倒置生长InAlAsP/InGaAs/Ge三结光伏电池的制备方法 |
-
2017
- 2017-02-28 CN CN201710109996.3A patent/CN106847999B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1243602A (zh) * | 1997-01-21 | 2000-02-02 | 博拉尔能源有限公司 | 制备薄硅膜的方法 |
CN104091862A (zh) * | 2010-08-06 | 2014-10-08 | 晶元光电股份有限公司 | 半导体光电元件及其制作方法 |
CN103579407A (zh) * | 2012-07-26 | 2014-02-12 | 聚日(苏州)科技有限公司 | 一种太阳能电池及其制造方法 |
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CN106847999A (zh) | 2017-06-13 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A manufacturing method for solar power generation modules Effective date of registration: 20230322 Granted publication date: 20180803 Pledgee: Nantong Hexin technology microfinance Co.,Ltd. Pledgor: NANTONG YIXUAN INDUSTRIAL DESIGN Co.,Ltd. Registration number: Y2023980035273 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
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Granted publication date: 20180803 Pledgee: Nantong Hexin technology microfinance Co.,Ltd. Pledgor: NANTONG YIXUAN INDUSTRIAL DESIGN Co.,Ltd. Registration number: Y2023980035273 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right |