CN106847943B - 打孔perc双面太阳能电池及其组件、***和制备方法 - Google Patents

打孔perc双面太阳能电池及其组件、***和制备方法 Download PDF

Info

Publication number
CN106847943B
CN106847943B CN201710122370.6A CN201710122370A CN106847943B CN 106847943 B CN106847943 B CN 106847943B CN 201710122370 A CN201710122370 A CN 201710122370A CN 106847943 B CN106847943 B CN 106847943B
Authority
CN
China
Prior art keywords
silver
grid
positive
transmission region
perc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710122370.6A
Other languages
English (en)
Other versions
CN106847943A (zh
Inventor
方结彬
何达能
陈刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Solar Energy Technology Co Ltd
Original Assignee
Zhejiang Love Solar Energy Technology Co Ltd
Guangdong Aiko Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang Love Solar Energy Technology Co Ltd, Guangdong Aiko Technology Co Ltd filed Critical Zhejiang Love Solar Energy Technology Co Ltd
Priority to CN201710122370.6A priority Critical patent/CN106847943B/zh
Priority to PCT/CN2017/087358 priority patent/WO2018157495A1/zh
Priority to US16/490,036 priority patent/US20200381572A1/en
Priority to KR1020197029111A priority patent/KR102240902B1/ko
Priority to JP2019548048A priority patent/JP6815533B2/ja
Priority to EP17898519.8A priority patent/EP3588582B1/en
Publication of CN106847943A publication Critical patent/CN106847943A/zh
Application granted granted Critical
Publication of CN106847943B publication Critical patent/CN106847943B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1864—Annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Cell Electrode Carriers And Collectors (AREA)

Abstract

本发明公开了一种打孔PERC双面太阳能电池，包括背银主栅、背铝副栅、背面钝化层、P型硅、N型发射极、正面钝化层、正银副栅和正银主栅，对背面钝化层通过激光开槽形成激光开槽区，所述背铝栅线通过激光开槽区与P型硅相连，所述PERC双面太阳能电池设有穿透电池正背面的透光区域。相应的，本发明还公开了一种打孔PERC双面太阳能电池的制备方法，以及采用上述太阳能电池的组件和***。采用本发明，可以增加背反射的太阳光，大幅提高电池背面的光电转换效率。

Description

打孔PERC双面太阳能电池及其组件、***和制备方法
技术领域
本发明涉及太阳能电池领域，尤其涉及一种打孔PERC双面太阳能电池、以及上述打孔PERC双面太阳能电池的制备方法，采用上述打孔PERC双面太阳能电池的太阳能电池组件，采用上述打孔PERC双面太阳能电池的太阳能***。
背景技术
晶硅太阳能电池是一种有效吸收太阳辐射能，利用光生伏打效应把光能转换成电能的器件，当太阳光照在半导体P-N结上，形成新的空穴-电子对，在P-N结电场的作用下，空穴由N区流向P区，电子由P区流向N区，接通电路后就形成电流。
传统晶硅太阳能电池基本上只采用正面钝化技术，在硅片正面用PECVD的方式沉积一层氮化硅，降低少子在前表面的复合速率，可以大幅度提升晶硅电池的开路电压和短路电流，从而提升晶硅太阳电池的光电转换效率。但是由于硅片的背面没有钝化，光电转换效率的提升仍然受到限制。
现有技术的双面太阳能电池结构：基底采用N型硅片，当太阳光子照射电池背面时，在N型硅片中产生的载流子穿过厚度约为200微米的硅片，由于N型硅片少子寿命高，载流子复合速率低，部分载流子可以到达正面的p-n结；太阳能电池的正面为主要受光面，其转换效率占整个电池转换效率的比例很高；正背面的综合作用，从而大大提高电池的转换效率。但是，N型硅片价格高，N型双面电池工艺复杂；因此，如何开发高效低成本的双面太阳能电池成为企业和研究者关注的热点。
另一方面，随着对晶硅电池的光电转换效率的要求越来越高，业界一直在研究PERC背钝化太阳电池技术。业界主流厂家主要在开发单面PERC太阳能电池， 本发明将PERC高效电池和双面电池结合起来，旨在开发综合光电转换效率更高的双面PERC太阳能电池。
对于双面PERC太阳能电池，由于光电转换效率高，同时双面吸收太阳光，发电量更高，在实际应用中具有更大的使用价值。因此，本发明旨在提出一种工艺简单、成本较低、易于推广、光电转换效率高的PERC双面太阳能电池。
发明内容
本发明所要解决的技术问题在于，提供一种打孔PERC双面太阳能电池，结构简单，成本较低、易于推广、大幅提高光电转换效率。
本发明所要解决的技术问题还在于，提供一种打孔PERC双面太阳能电池的制备方法，工艺简单，成本较低、易于推广、大幅提高光电转换效率。
本发明所要解决的技术问题还在于，提供一种打孔PERC双面太阳能电池组件，结构简单，成本较低、易于推广、大幅提高光电转换效率。
本发明所要解决的技术问题还在于，提供一种P型PERC双面太阳能***，结构简单，成本较低、易于推广、大幅提高光电转换效率。
为了解决上述技术问题，本发明提供了一种打孔PERC双面太阳能电池，包括背银主栅、背铝副栅、背面钝化层、P型硅、N型发射极、正面钝化层、正银副栅和正银主栅，对背面钝化层通过激光开槽形成激光开槽区，所述背铝栅线通过激光开槽区与P型硅相连，
所述背铝栅线也可以是曲线形、弧形、波浪形等。
所述PERC双面太阳能电池设有穿透电池正背面的透光区域；
所述透光区域设于背银主栅、正银主栅之外的区域；
所述透光区域设于背铝副栅上或设于背铝副栅之外的区域；
所述透光区域设于正银副栅上或设于正银副栅之外的区域，当所述透光区域设于正银副栅上时，所述正银副栅包括第一正银副栅和第二正银副栅，所述第二正银副栅绕开透光区域，且与第一正银副栅形成接触。
作为上述方案的优选方式，所述透光区域的尺寸小于背铝副栅的宽度且大于正银副栅的宽度。
作为上述方案的优选方式，所述第一正银副栅为线形，所述第二正银副栅为弧形。
作为上述方案的优选方式，所述透光区域为圆孔、方孔、五边形孔或六边形孔。
作为上述方案的优选方式，所述透光区域的数量为2-100个。
作为上述方案的优选方式，所述透光区域的尺寸为100微米-5厘米。
作为上述方案的优选方式，所述背铝副栅的宽度为150微米-5.5厘米，所述正银副栅的宽度为30-80微米。
相应的，本发明还公开一种打孔PERC双面太阳能电池的制备方法，包括：
（1）选用P型硅，对硅片进行激光打孔，形成透光区域；
（2）在硅片正面和背面形成绒面；
（3）对硅片的正面进行扩散，形成N型发射极；
（4）去除扩散过程形成的磷硅玻璃；
（5）在硅片正面、背面形成钝化层；
（6）对硅片背面激光开槽；
（7）在所述硅片背面印刷背银主栅，所述背银主栅印刷在透光区域之外的区域；
（9）在所述硅片背面印刷背铝副栅，所述背铝副栅印刷在透光区域上或设于透光区域之外的区域；
（10）在所述硅片正面印刷正银主栅以及正银副栅，所述正银主栅印刷在透光区域之外的区域；
所述正银副栅印刷在透光区域上或设于透光区域之外的区域，当所述透光区域设于正银副栅上时，所述正银副栅包括第一正银副栅和第二正银副栅，所述第二正银副栅绕开透光区域，且与第一正银副栅形成接触；
（11）对硅片进行高温烧结，形成背银电极和正银电极；
（12）对硅片进行抗LID退火；
（13）对硅片周边和透光区域周边进行激光隔离。
相应的，本发明还公开一种PERC太阳能电池组件，包括PERC太阳能电池和封装材料，所述PERC太阳能电池是上述任一的打孔PERC双面太阳能电池。
相应的，本发明还公开一种PERC太阳能***，包括PERC太阳能电池，所述PERC太阳能电池是上述任一的打孔PERC双面太阳能电池。
实施本发明，具有如下有益效果：
本发明PERC双面太阳能电池设有穿透电池正背面的透光区域，透光区域与背银主栅、正银主栅、背铝副栅、正银副栅采用特殊的结构设计，具体的，所述透光区域设于背银主栅、正银主栅之外的区域；且设于背铝副栅上或设于背铝副栅之外的区域；且设于正银副栅上或设于正银副栅之外的区域。当所述透光区域设于正银副栅上时，所述正银副栅包括第一正银副栅和第二正银副栅，所述第二正银副栅绕开透光区域，且与第一正银副栅形成接触。采用本发明，正面入射的太阳光可以通过电池上的透光区域照射到电池背面，再通过双面太阳能电池组件背面的反光介质，将太阳光反射到电池的背面，增加背反射的太阳光，大幅提高电池背面的光电转换效率，电池背面的光电转换效率可提升1%-10%（相对值）。
附图说明
图1是本发明太阳能电池的剖视图；
图2是本发明太阳能电池的背面结构一实施例的示意图；
图3是本发明太阳能电池的背面结构另一实施例的示意图；
图4是本发明太阳能电池的正面结构一实施例的示意图；
图5是本发明太阳能电池的正面结构另一实施例的示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明作进一步地详细描述。
结合图1至5，本发明提供一种打孔PERC双面太阳能电池，包括背银主栅1、背铝副栅2、背面钝化层3、P型硅4、N型发射极5、正面钝化层6、正银副栅7和正银主栅8，对背面钝化层3通过激光开槽形成激光开槽区9，所述背铝栅线通过激光开槽区9与P型硅4相连。
所述PERC双面太阳能电池设有穿透电池正背面的透光区域10；
所述透光区域10设于背银主栅1、正银主栅8之外的区域，透光区域不能影响背银主栅1、正银主栅8，否则将影响电池封装成组件时的焊接。
所述透光区域10设于背铝副栅2上或设于背铝副栅2之外的区域。透光区域10在电池的背面有两种实施方式，具体参见图2、图3。如图2所示，图2显示了太阳能电池的背面结构一实施例，所述透光区域10设于背铝副栅2上，所述透光区域10的尺寸小于背铝副栅2的宽度。如图3所示，图3显示了太阳能电池的背面结构另一实施例，所述透光区域10设于背铝副栅2之外的区域，所述透光区域10的尺寸可以大于背铝副栅2的宽度，也可以等于背铝副栅2的宽度，还可以小于背铝副栅2的宽度。
所述透光区域10设于正银副栅7上或设于正银副栅7之外的区域。透光区域10在电池的正面有两种实施方式，具体参见图4、图5。如图4所示，图4显示了太阳能电池的正面结构一实施例，所述透光区域10设于正银副栅7上，所述透光区域10的尺寸大于正银副栅7的宽度。当所述透光区域10设于正银副栅7上时，所述正银副栅7包括第一正银副栅71和第二正银副栅72，所述第二正银副栅72绕开透光区域10，且与第一正银副栅71形成接触。优选的，所述第一正银副栅71为线形，所述第二正银副栅72为弧形。
需要说明的是，所述第一正银副栅71还可以是其他形状，例如波浪形、锯齿形等，所述第二正银副栅72还可以是其他形状，例如曲线形、三角形、四边形、半圆形等，第一正银副栅71、第二正银副栅72的实施方式并不局限于本发明，只要能实现连接即可。
如图5所示，图5显示了太阳能电池的正面结构另一实施例，所述透光区域10设于正银副栅7之外的区域，所述透光区域10的尺寸可以大于正银副栅7的宽度，也可以等于正银副栅7的宽度。
需要说明的是，在图2-5所示的实施例中，其可以根据实际需要来对透光区域10、背银主栅1、背铝副栅2、正银副栅7和正银主栅8的形状、数量和尺寸；来进行限定，其实施方式并不局限于本发明所举实施例。
本发明增设了透光区域10，正面入射的太阳光可以通过电池上的透光区域照射到电池背面，再通过双面太阳能电池组件背面的反光介质，将太阳光反射到电池的背面，增加背反射的太阳光，大幅提高电池背面的光电转换效率，电池背面的光电转换效率可提升1%-10%（相对值）。而且，本发明增设了透光区域10后，可以节省背银主栅1、背铝副栅2、正银副栅7和正银主栅8的数量，依然能起到同样甚至更佳的光电转换效率，这样可以有效减少银浆和铝浆的用量，节省成本。
优选的，所述透光区域10的尺寸小于背铝副栅2的宽度且大于正银副栅7的宽度，结构设计更为合理，工业化也更易于实施。
优选的，所述透光区域10为圆孔、方孔、五边形孔或六边形孔。更佳的，所述透光区域10为圆孔、正多边形孔。需要说明的是，本发明的透光区域10还可以是其他形状，例如八边形孔、十二边形孔或不规则多边形孔，其实施方式并不局限于本发明所举实施例。
优选的，所述透光区域10的数量为2-100个，所述透光区域10的尺寸为100微米-5厘米，所述背铝副栅2的宽度为150微米-5.5厘米，所述正银副栅7的宽度为30-80微米。更佳的，所述透光区域10的数量为10-50个，所述透光区域10的尺寸为120微米-4厘米，所述背铝副栅2的宽度为185微米-4.5厘米，所述正银副栅7的宽度为40-70微米。
优选的，所述背面钝化层3包括氧化铝层31和氮化硅层32，所述氧化铝层31与P型硅4连接，所述氮化硅层32与氧化铝层31连接；所述氮化硅层32的厚度为20-500nm；所述氧化铝层31的厚度为2-50nm。
优选的，所述正面钝化层6为正面氮化硅层。
相应的，本发明还公开一种打孔PERC双面太阳能电池的制备方法，包括：
（1）选用P型硅，对硅片进行激光打孔，形成透光区域；
（2）在硅片正面和背面形成绒面；
（3）对硅片的正面进行扩散，形成N型发射极；
（4）去除扩散过程形成的磷硅玻璃；
（5）在硅片正面、背面形成钝化层；
步骤（5）包括：（A）在硅片背面沉积三氧化二铝膜；（B）在硅片背面沉积氮化硅膜；（C）在硅片正面沉积氮化硅膜。需要说明的是，C与A、B的顺序可以互换，C可以在A、B之前。
（6）对硅片背面激光开槽；
（7）在所述硅片背面印刷背银主栅，所述背银主栅印刷在透光区域之外的区域；
（9）在所述硅片背面印刷背铝副栅，所述背铝副栅印刷在透光区域上或设于透光区域之外的区域；
（10）在所述硅片正面印刷正银主栅以及正银副栅，所述正银主栅印刷在透光区域之外的区域；
所述正银副栅印刷在透光区域上或设于透光区域之外的区域，当所述透光区域设于正银副栅上时，所述正银副栅包括第一正银副栅和第二正银副栅，所述第二正银副栅绕开透光区域，且与第一正银副栅形成接触；
（11）对硅片进行高温烧结，形成背银电极和正银电极；
（12）对硅片进行抗LID退火；
（13）对硅片周边和透光区域周边进行激光隔离。
本发明制备方法还包括对硅片背面进行抛光处理，该步骤设于步骤（4）去除扩散过程形成的磷硅玻璃后。需要说明的是，背面抛光处理可以根据需要而定，本发明可以进行背面抛光处理，也可以不进行背面抛光处理。
相应的，本发明还公开一种PERC太阳能电池组件，包括PERC太阳能电池和封装材料，所述PERC太阳能电池是上述任一的打孔PERC双面太阳能电池。具体的，作为PERC太阳能电池组件的一实施例，其由上至下依次连接的高透钢化玻璃、乙烯-醋酸乙烯共聚物EVA、PERC太阳能电池、乙烯-醋酸乙烯共聚物EVA和背板组成。
相应的，本发明还公开一种PERC太阳能***，包括PERC太阳能电池，所述PERC太阳能电池是上述任一的打孔PERC双面太阳能电池。作为PERC太阳能***的一优选实施例，包括PERC太阳能电池、蓄电池组，充放电控制器逆变器，交流配电柜和太阳跟踪控制***。其中，PERC太阳能***可以设有蓄电池组、充放电控制器逆变器，也可以不设蓄电池组、充放电控制器逆变器，本领域技术人员可以根据实际需要进行设置。
需要说明的是，PERC太阳能电池组件、PERC太阳能***中，除了打孔PERC双面太阳能电池之外的部件，参照现有技术设计即可。
最后所应当说明的是，以上实施例仅用以说明本发明的技术方案而非对本发明保护范围的限制，尽管参照较佳实施例对本发明作了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的实质和范围。

Claims (10)

1.一种打孔PERC双面太阳能电池，包括背银主栅、背铝副栅、背面钝化层、P型硅、N型发射极、正面钝化层、正银副栅和正银主栅，对背面钝化层通过激光开槽形成激光开槽区，所述背铝栅线通过激光开槽区与P型硅相连，其特征在于，
所述PERC双面太阳能电池设有穿透电池正背面的透光区域；
所述透光区域设于背银主栅、正银主栅之外的区域；
所述透光区域设于背铝副栅上或设于背铝副栅之外的区域；
所述透光区域设于正银副栅上或设于正银副栅之外的区域，当所述透光区域设于正银副栅上时，所述正银副栅包括第一正银副栅和第二正银副栅，所述第二正银副栅绕开透光区域，且与第一正银副栅形成接触。
2.如权利要求1所述打孔PERC双面太阳能电池，其特征在于，所述透光区域的尺寸小于背铝副栅的宽度且大于正银副栅的宽度。
3.如权利要求1所述打孔PERC双面太阳能电池，其特征在于，所述第一正银副栅为线形，所述第二正银副栅为弧形。
4.如权利要求1所述打孔PERC双面太阳能电池，其特征在于，所述透光区域为圆孔、方孔、五边形孔或六边形孔。
5.如权利要求1所述打孔PERC双面太阳能电池，其特征在于，所述透光区域的数量为2-100个。
6.如权利要求1所述打孔PERC双面太阳能电池，其特征在于，所述透光区域的尺寸为100微米-5厘米。
7.如权利要求6所述打孔PERC双面太阳能电池，其特征在于，所述背铝副栅的宽度为150微米-5.5厘米，所述正银副栅的宽度为30-80微米。
8.一种如权利要求1-7任一项所述的打孔PERC双面太阳能电池的制备方法，其特征在于，包括：
（1）选用P型硅，对硅片进行激光打孔，形成透光区域；
（2）在硅片正面和背面形成绒面；
（3）对硅片的正面进行扩散，形成N型发射极；
（4）去除扩散过程形成的磷硅玻璃；
（5）在硅片正面、背面形成钝化层；
（6）对硅片背面激光开槽；
（7）在所述硅片背面印刷背银主栅，所述背银主栅印刷在透光区域之外的区域；
（9）在所述硅片背面印刷背铝副栅，所述背铝副栅印刷在透光区域上或设于透光区域之外的区域；
（10）在所述硅片正面印刷正银主栅以及正银副栅，所述正银主栅印刷在透光区域之外的区域；
所述正银副栅印刷在透光区域上或设于透光区域之外的区域，当所述透光区域设于正银副栅上时，所述正银副栅包括第一正银副栅和第二正银副栅，所述第二正银副栅绕开透光区域，且与第一正银副栅形成接触；
（11）对硅片进行高温烧结，形成背银电极和正银电极；
（12）对硅片进行抗LID退火；
（13）对硅片周边和透光区域周边进行激光隔离。
9.一种PERC太阳能电池组件，其特征在于，包括PERC太阳能电池和封装材料，其特征在于，所述PERC太阳能电池是权利要求1-7任一项所述的打孔PERC双面太阳能电池。
10.一种PERC太阳能***，包括PERC太阳能电池，其特征在于，所述PERC太阳能电池是权利要求1-7任一项所述的打孔PERC双面太阳能电池。
CN201710122370.6A 2017-03-03 2017-03-03 打孔perc双面太阳能电池及其组件、***和制备方法 Active CN106847943B (zh)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN201710122370.6A CN106847943B (zh) 2017-03-03 2017-03-03 打孔perc双面太阳能电池及其组件、***和制备方法
PCT/CN2017/087358 WO2018157495A1 (zh) 2017-03-03 2017-06-07 打孔perc双面太阳能电池及其组件、***和制备方法
US16/490,036 US20200381572A1 (en) 2017-03-03 2017-06-07 Bifacial punched perc solar cell and module, system, and preparation method thereof
KR1020197029111A KR102240902B1 (ko) 2017-03-03 2017-06-07 천공 perc 양면 태양전지 및 그 어셈블리, 시스템과 제조방법
JP2019548048A JP6815533B2 (ja) 2017-03-03 2017-06-07 穿孔ｐｅｒｃ両面太陽電池およびそのモジュール、システムと製造方法
EP17898519.8A EP3588582B1 (en) 2017-03-03 2017-06-07 Drilling- and perc-based doubled-sided solar cell, and assembly, system, and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710122370.6A CN106847943B (zh) 2017-03-03 2017-03-03 打孔perc双面太阳能电池及其组件、***和制备方法

Publications (2)

Publication Number Publication Date
CN106847943A CN106847943A (zh) 2017-06-13
CN106847943B true CN106847943B (zh) 2018-10-09

Family

ID=59137927

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710122370.6A Active CN106847943B (zh) 2017-03-03 2017-03-03 打孔perc双面太阳能电池及其组件、***和制备方法

Country Status (6)

Country Link
US (1) US20200381572A1 (zh)
EP (1) EP3588582B1 (zh)
JP (1) JP6815533B2 (zh)
KR (1) KR102240902B1 (zh)
CN (1) CN106847943B (zh)
WO (1) WO2018157495A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107946390A (zh) * 2017-12-04 2018-04-20 孙健春 一种具有换电网的太阳能电池及制作方法
KR102253547B1 (ko) * 2018-11-29 2021-05-18 울산과학기술원 무색 투명 반도체 기판 및 이의 제조방법
CN110047952A (zh) * 2019-04-04 2019-07-23 国家电投集团西安太阳能电力有限公司 一种太阳能电池Al栅线结构及其制备方法
KR102483918B1 (ko) * 2020-08-26 2022-12-30 성균관대학교산학협력단 개구부를 포함하는 양면 수광형 실리콘 탠덤형 태양 전지의 제조 방법
KR102509612B1 (ko) * 2021-02-25 2023-03-14 울산과학기술원 양면 투광성 향상을 위한 투명 반도체 기판 및 그 제조방법

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7982126B2 (en) * 2007-05-21 2011-07-19 Macfarlane Alexander T Photovoltaic module with improved heat transfer and recovery potential
CN100583467C (zh) * 2008-12-25 2010-01-20 广东金刚玻璃科技股份有限公司 透光单晶硅太阳电池的制造方法
WO2011010373A1 (ja) * 2009-07-22 2011-01-27 三菱電機株式会社 太陽電池セルおよびその製造方法
KR20110034931A (ko) * 2009-09-29 2011-04-06 삼성전자주식회사 태양 전지 및 이의 제조 방법
JP2013098287A (ja) * 2011-10-31 2013-05-20 Showa Shell Sekiyu Kk 光透過型薄膜太陽電池モジュール、及びその製造方法
CN102800745A (zh) * 2012-07-04 2012-11-28 天威新能源控股有限公司 一种背面钝化双面太阳电池的生产方法
CN103489934B (zh) * 2013-09-25 2016-03-02 晶澳（扬州）太阳能科技有限公司 一种双面透光的局部铝背场太阳能电池及其制备方法
US20160005915A1 (en) * 2014-07-03 2016-01-07 Sino-American Silicon Products Inc. Method and apparatus for inhibiting light-induced degradation of photovoltaic device
US20160049540A1 (en) * 2014-08-13 2016-02-18 Solexel, Inc. Rear wide band gap passivated perc solar cells
CN204189800U (zh) * 2014-08-15 2015-03-04 英稳达科技股份有限公司 具发射极与背面钝化的太阳能电池及其模组
CN204045602U (zh) * 2014-09-12 2014-12-24 合肥海润光伏科技有限公司 背面铝箔点接触的perc晶体硅太阳能电池
CN204179095U (zh) * 2014-10-16 2015-02-25 苏州阿特斯阳光电力科技有限公司 一种perc太阳能电池
DE202015101360U1 (de) * 2015-03-17 2015-03-26 Solarworld Innovations Gmbh Solarzelle
DE202015004065U1 (de) * 2015-06-09 2015-07-30 Solarworld Innovations Gmbh Solarzellenanordnung
CN204792839U (zh) * 2015-06-29 2015-11-18 江苏武进汉能光伏有限公司 一种bipv晶硅电池组件
CN205335274U (zh) * 2015-12-31 2016-06-22 广东爱康太阳能科技有限公司 一种局部铝背场的晶体硅太阳能电池
CN105702758A (zh) * 2016-04-14 2016-06-22 泰州中来光电科技有限公司 背结n型太阳能电池的制备方法及其电池和组件、***
CN106449876B (zh) * 2016-10-17 2017-11-10 无锡尚德太阳能电力有限公司 选择性发射极双面perc晶体硅太阳能电池的制作方法
CN206639804U (zh) * 2017-03-03 2017-11-14 广东爱康太阳能科技有限公司 打孔perc双面太阳能电池及其组件、***

Also Published As

Publication number Publication date
KR20200005534A (ko) 2020-01-15
KR102240902B1 (ko) 2021-04-16
EP3588582A1 (en) 2020-01-01
CN106847943A (zh) 2017-06-13
EP3588582A4 (en) 2020-12-23
WO2018157495A1 (zh) 2018-09-07
US20200381572A1 (en) 2020-12-03
JP6815533B2 (ja) 2021-01-20
EP3588582B1 (en) 2022-05-11
JP2020509605A (ja) 2020-03-26

Similar Documents

Publication Publication Date Title
CN106847943B (zh) 打孔perc双面太阳能电池及其组件、***和制备方法
CN106952972B (zh) P型perc双面太阳能电池及其组件、***和制备方法
CN107425080B (zh) P型perc双面太阳能电池及其组件、***和制备方法
CN106876496B (zh) P型perc双面太阳能电池及其组件、***和制备方法
CN106887475B (zh) P型perc双面太阳能电池及其组件、***和制备方法
CN106876497B (zh) P型perc双面太阳能电池的制备方法
WO2018157822A1 (zh) P型perc双面太阳能电池及其组件、***和制备方法
CN107039543B (zh) P型perc双面太阳能电池及其组件、***和制备方法
CN202996861U (zh) 太阳能电池模组
CN206947356U (zh) P型perc双面太阳能电池及其组件、***
CN206639804U (zh) 打孔perc双面太阳能电池及其组件、***
CN206921831U (zh) P型perc双面太阳能电池及其组件、***
WO2018157493A1 (zh) P型perc双面太阳能电池及其制备方法、组件和***
CN106898659A (zh) 双玻太阳能电池组件及***
CN206628482U (zh) P型perc双面太阳能电池及其组件、***
CN206931606U (zh) P型perc双面太阳能电池及其组件、***
CN206758442U (zh) P型perc双面太阳能电池、组件和***
CN206628487U (zh) P型perc双面太阳能电池、组件和***
CN206225381U (zh) 高效多结太阳能电池
CN206628480U (zh) P型perc双面太阳能电池及其组件、***
CN206921833U (zh) P型双面太阳能电池
CN107093637A (zh) P型perc双面太阳能电池及其制备方法、组件和***
CN205752203U (zh) 一种高光电转换效率的太阳能电池

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information
CB02 Change of applicant information

Address after: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong.

Applicant after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

Address before: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong.

Applicant before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20180815

Address after: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong.

Applicant after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

Applicant after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

Address before: 528100 No. 69, C District, Sanshui Industrial Park, Foshan, Guangdong.

Applicant before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd.

GR01 Patent grant
GR01 Patent grant