CN106847933B - Monolithic integrated ultraviolet-infrared bicolor avalanche photodiode and preparation method thereof - Google Patents
Monolithic integrated ultraviolet-infrared bicolor avalanche photodiode and preparation method thereof Download PDFInfo
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Abstract
The invention belongs to the field of semiconductor photoelectric detectors, and provides a monolithic integrated ultraviolet-infrared bicolor avalanche photodiode and a preparation method thereof, wherein the diode structure comprises a lower electrode contact layer, an intrinsic multiplication layer, a charge layer, a periodic heterostructure absorption layer and an upper electrode contact layer; the periodic heterostructure absorber layer is formed by alternately growing two materials, a quantum confinement effect is formed along the growth direction of the materials, an inter-band transition from a conduction band inner sub-band energy level corresponds to absorption of infrared photons, and an inter-band transition from a valence band to a conduction band corresponds to absorption of ultraviolet photons. Photo-generated electrons generated in the absorption layer can all migrate into the intrinsic multiplication layer to be subjected to collision ionization, and meanwhile, the dual-band avalanche detection is realized.
Description
Technical Field
The invention relates to the field of photoelectric detectors, in particular to a monolithic integrated ultraviolet-infrared bicolor avalanche photodiode and a preparation method thereof.
Background
Double-color detection, even multi-color detection is one of the main directions of the development of future detection technology, and has important application value in civil and military fields such as meteorological monitoring, fire early warning, missile guidance and the like. The detection mode of single wavelength is easily influenced by background radiation, interference signals and the like, and if the detector can simultaneously have the independent detection capability of ultraviolet-infrared dual-waveband, the reliability, robustness and accuracy of detection can be greatly improved. In particular, in some complex application scenarios, the optical signal reaching the detector is very weak, which requires the detector to have higher responsivity in both bands, i.e. it is desirable that the detector can operate in gain mode.
Photomultiplier tubes (PMTs) have extremely high gain and low noise in the ultraviolet band, but are nearly non-responsive in the infrared band and suffer from the disadvantages of being bulky and fragile relative to semiconductor detectors.
At present, silicon-based avalanche photodiodes are most widely used in semiconductor gain detectors, but are limited by the forbidden bandwidth of silicon materials, so that the silicon-based avalanche photodiodes are easy to age under ultraviolet light irradiation, basically do not respond to light waves with wavelengths longer than 1100 nm, and are not ideal ultraviolet-infrared bicolor avalanche detectors.
The GaN-based wide-bandgap semiconductor material has very stable physical and chemical properties, and the bandgap width is just near the ultraviolet band, so that the GaN-based wide-bandgap semiconductor material is an ideal material for manufacturing an ultraviolet detection device. In addition, with the progress of the material epitaxy technology, the successful preparation of the heterojunction material structure makes it possible for the nitride material to detect infrared light waves. Therefore, the development of a monolithically integrated ultraviolet-infrared two-color detection technology by using nitride materials is a current research hotspot. The existing GaN-based ultraviolet-infrared double-color detection device is mainly based on a photoconductive mode combining interband transition (ultraviolet detection) of bulk materials and inner photoelectron emission (infrared detection) or sub-band energy level transition (infrared detection) of conduction band steps, and the working principle of the device limits that the device cannot work in an avalanche detection mode. In a conventional GaN-based absorption-multiplication split avalanche photodiode, the absorption region is made of a bulk material and can only respond to ultraviolet light. Therefore, if the bulk material of the absorption region is changed into a periodic heterojunction material structure, the ultraviolet light is detected by utilizing interband transition, and the infrared light is detected by utilizing interband transition of conduction band energy levels, the ultraviolet-infrared double-waveband avalanche detection can be realized simultaneously.
Disclosure of Invention
The invention provides a monolithic integrated ultraviolet-infrared bicolor avalanche photodiode and a preparation method thereof, which solve the problem that the existing monolithic integrated bicolor detection device cannot realize dual-band avalanche detection at the same time and can effectively ensure high responsivity at two bands.
The technical scheme of the invention is as follows:
the monolithically integrated ultraviolet-infrared bi-color avalanche photodiode is characterized by comprising, from bottom to top: the semiconductor device comprises a substrate, a buffer layer, a lower electrode contact layer, an intrinsic multiplication layer, a charge layer, a periodic heterostructure absorption layer and an upper electrode contact layer.
The substrate may be sapphire (Al) 2 O 3 ) Any one of materials such as gallium nitride (GaN), aluminum nitride (AlN), silicon carbide (SiC), silicon (Si), zinc oxide (ZnO) and the like is used for structural growth of the detector material.
The buffer layer grows on the substrate, and then a lower electrode contact layer, an intrinsic multiplication layer, a charge layer and an upper electrode contact layer sequentially grow, wherein the buffer layer, the lower electrode contact layer, the intrinsic multiplication layer, the charge layer and the upper electrode contact layer are made of one or different materials of aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), indium aluminum nitride (InAlN), indium aluminum gallium nitride (InAlGaN) and silicon carbide (SiC).
The thickness of the buffer layer is 0.01-10 [ mu ] m, and the buffer layer is used for improving the quality of growth materials.
The n-type doping concentration of the lower electrode contact layer is 1 x 10 17 cm -3 To 5X 10 19 cm -3 The thickness is 0.1 to 10 mu m, and the method is used for manufacturing an n-type ohmic contact electrode;
the thickness of the intrinsic multiplication layer is 0.05 mu m to 1.0 mu m, and the intrinsic multiplication layer is a region where photon-generated carriers are subjected to avalanche multiplication;
the p-type doping concentration of the charge layer is 1 × 10 17 cm -3 To 1X 10 19 cm -3 The thickness is 0.01 to 0.15 mu m, and the adjustment is used for adjusting the electric field of the absorption layer and the multiplication layer;
the periodic heterostructure absorption layer adopts Al x Ga 1-x N/Al y Ga 1-y N material system, or In y Ga 1-y N/In x Ga 1-x An N, inGaN/AlGaN material system, wherein x is more than or equal to 0<y is less than or equal to 1, a structure of quantum well or superlattice with period number of 1-500 is formed, and electrons are from conduction band ground state energy level to excited state energy levelThe transition corresponds to absorption of an infrared photon and the transition from the valence band to the conduction band corresponds to absorption of an ultraviolet photon. Al (Al) x Ga 1-x N or In y Ga 1-y N-type doping with a doping concentration of 5 × 10 17 cm -3 To 5X 10 19 cm -3 0.001 to 0.02 mu m in thickness and Al y Ga 1-y N or In x Ga 1-x The N thickness is 0.001 to 0.02 mu m;
the upper electrode contact layer adopts p-type doped Al z Ga 1-z N, z is more than or equal to 0 and less than or equal to 1, and the doping concentration is 1 multiplied by 10 17 cm -3 To 1X 10 19 cm -3 And the thickness is 0.05 mu m to 0.2 mu m, and the method is used for manufacturing the p-type ohmic contact electrode.
The method for preparing the monolithic integrated ultraviolet-infrared bicolor avalanche photodiode comprises the following steps:
(1) Growing a buffer layer on a substrate;
(2) Growing a lower electrode contact layer on the buffer layer;
(3) Growing an intrinsic multiplication layer on the lower electrode contact layer;
(4) Growing a charge layer over the intrinsic multiplication layer;
(5) Growing a periodic heterostructure absorber layer over the charge layer;
(6) Growing an upper electrode contact layer over the periodic heterostructure absorber layer;
(7) Manufacturing an n-type ohmic contact electrode on the lower electrode contact layer, manufacturing a p-type ohmic contact electrode on the upper electrode contact layer to form a double-electrode control device, or adding another p-type ohmic contact electrode on the charge layer to form a three-electrode control device;
(8) In order to realize the coupling of near infrared light, one side surface of a substrate of the manufactured device is made into an inclined surface, or a one-dimensional grating or a two-dimensional grating is manufactured on an upper electrode contact layer before a p-type ohmic contact electrode is manufactured.
In operation of the device of the present invention, a relatively high reverse voltage will be applied between the p-type ohmic contact electrode and the n-type ohmic contact electrode. Because the periodic heterostructure absorption layer is positioned between the p-type upper electrode contact layer and the p-type charge layer, the electric field intensity applied to the periodic heterostructure absorption layer is far smaller than that of the intrinsic multiplication layer positioned between the p-type charge layer and the n-type lower electrode contact layer, theoretically, under the condition that electrons can collide and ionize in the intrinsic multiplication layer, the electrons on the ground state energy level of the periodic heterostructure absorption layer cannot be depleted under the action of an electric field. When infrared light is incident, electrons on the ground state energy level of the periodic heterostructure absorption layer are transited to the excited state energy level, then photo-generated electrons are directly transited to the intrinsic multiplication layer from the excited state energy level to generate collision and ionization, and avalanche detection of infrared photons is achieved. Wherein the energy difference between the ground state energy level and the excited state energy level within the periodic heterostructure absorption layer will determine the wavelength of the absorbed infrared photon. When ultraviolet light is incident, electrons in a quantum well (or a quantum barrier) of the periodic heterostructure absorption layer are transferred from a valence band to a conduction band, and generated photo-generated electrons are transferred to the intrinsic multiplication layer to generate collision and ionization, so that ultraviolet photon avalanche detection is realized. Wherein, the long wavelength limit for absorbing ultraviolet photons is mainly limited by the forbidden bandwidth of the material of the absorbing layer. Based on the device described by the invention, ultraviolet-infrared bicolor avalanche detection can be realized simultaneously, and the response sensitivity of the device in two wave bands is improved.
Particularly, in order to prevent electrons on the base state energy level of the absorption layer from being exhausted under the combined action of large reverse bias and a polarization electric field of the nitride material, and further influence the work of the device in an infrared band, the device can be made into a double-mesa structure to form a three-electrode control device, and different electric fields are applied to the absorption layer and the intrinsic multiplication layer of the periodic heterostructure to respectively regulate and control the energy band structures of the absorption layer and the intrinsic multiplication layer. The specific manufacturing method comprises the steps of etching a large mesa structure to a lower electrode contact layer, etching a small mesa structure to a charge layer, manufacturing an n-type ohmic contact electrode outside a mesa region (the lower electrode contact layer), manufacturing a first p-type ohmic contact electrode on a small mesa (an upper electrode contact layer), and manufacturing a second p-type ohmic contact electrode on the exposed charge layer. The energy band structure of the periodic heterostructure absorption layer is controlled to be basically in a flat band state by applying a small voltage difference between the first p-type ohmic contact electrode and the second p-type ohmic contact electrode so as to ensure that electrons are sufficiently filled in a ground state energy level, and a large reverse voltage is applied between the second p-type ohmic contact electrode and the n-type ohmic contact electrode so as to be beneficial to the avalanche multiplication effect of photogenerated carriers.
To further illustrate the features and effects of the present invention, the present invention will be further described with reference to the accompanying drawings and specific embodiments.
Drawings
Fig. 1 is a schematic diagram of an energy band structure and a schematic diagram of carrier transport of a diode under a reverse working voltage.
Fig. 2 is a schematic cross-sectional structure diagram of a diode in embodiment 1.
Fig. 3 is a schematic of the conduction band structure of the periodic heterostructure absorber layer of the diode of example 1.
Fig. 4 is a schematic cross-sectional structure diagram of a diode in embodiment 2.
Fig. 5 is a schematic of the conduction band structure of the periodic heterostructure absorber layer of the diode of example 2.
101-a lower electrode contact layer, 103-an intrinsic multiplication layer, 105-a charge layer, 107-a periodic heterostructure absorption layer, 109-an upper electrode contact layer, 201-a substrate, 203-a buffer layer, 205-an n-type lower ohmic contact electrode, 207-a p-type upper ohmic contact electrode, 209-a first p-type ohmic contact electrode, 211-a second p-type ohmic contact electrode, 301-an absorption layer electron ground state energy level wave function, and 303-an absorption layer electron excited state energy level wave function.
Detailed Description
Example 1
As shown in fig. 1, the band structure and the carrier dynamics process in the device operating state are shown, wherein 101 is the lower electrode contact layer, 103 is the intrinsic multiplication layer, 105 is the charge layer, 107 is the periodic heterostructure absorption layer, and 109 is the upper electrode contact layer. Under the working state, a larger reverse bias voltage needs to be applied to the device, and then a large potential difference is generated in the intrinsic multiplication layer, the electric field intensity of the layer is far greater than that of other layers, and enough kinetic energy is provided for collision and ionization of photogenerated carriers. Meanwhile, the energy band of the periodic heterostructure absorption layer is basically in a flat band state to ensure that the ground state energy level is effectively filled with electrons. Under the excitation of infrared light, electrons on the ground state energy level of the periodic heterostructure absorption layer are transited to the excited state energy level to become photo-generated electrons, the photo-generated electrons enter the charge layer through resonant tunneling under the action of an electric field and finally migrate to the intrinsic multiplication layer to be collided and ionized, and the avalanche detection of infrared photons is completed. The energy of absorption of an infrared photon is determined by the difference in energy between the ground and excited state energy levels. Similarly, under the excitation of ultraviolet light, electrons in valence bands in the heterojunction quantum well and the quantum barrier are excited to a conduction band to form photoproduction electrons, and the photoproduction electrons are finally transferred to the intrinsic multiplication layer to complete avalanche detection of ultraviolet photons. The peak response wavelength and the half width of the response spectrum of ultraviolet light are related to the forbidden bandwidth of the material on one hand and the transport efficiency of photo-generated electrons on different energy distributions in a conduction band on the other hand.
As shown in fig. 2, a cross-sectional view of the device structure of this example was grown on a sapphire substrate using Molecular Beam Epitaxy (MBE) techniques. The buffer layer 203, the lower electrode contact layer 101, the intrinsic multiplication layer 103, the charge layer 105, the periodic heterostructure absorption layer 107 and the upper electrode contact layer 109 are sequentially arranged from the substrate 201 to the top, and the specific preparation method is as follows:
(1) Firstly growing an AlN buffer layer of 1 mu m on a sapphire substrate;
(2) An n-type GaN lower electrode contact layer with the doping concentration of 1 × 10 is grown on the AlN buffer layer 19 cm -3 ；
(3) A 300 nm GaN multiplication layer, namely an avalanche region, is grown on the n-type GaN lower electrode contact layer;
(4) Growing a 50 nm p-type GaN charge layer on the GaN multiplication layer, with p-type doping concentration of 5 × 10 17 cm -3 ；
(5) Growing a 50-period GaN (1.5 nm)/AlN (1.5 nm) heterostructure absorption layer on the p-type GaN charge layer, alternately growing two thin layer materials and keeping strict periodicity, and doping the GaN layer with n type with the doping concentration of 5 multiplied by 10 19 cm -3 ；
(6) Regrowing 100 nm p-type GaN upper electrode contact layer on 50 periods GaN (1.5 nm)/AlN (1.5 nm) heterostructure absorption layer with doping concentration of 1 × 10 19 cm -3 ；
(7) Etching partial area of the grown material sample to the n-type GaN lower electrode contact layer by adopting a standard photoetching process and an ICP etching process to form a circular mesa structure with the diameter of tens of micrometers to hundreds of micrometers;
(8) Depositing a Ni/Au transparent electrode with the thickness of 2.5 nm/5 nm on the round table-board structure by adopting an electron beam evaporation technology, and then depositing a Ti/Au electrode with the thickness of 20 nm/300 nm on the surface of the n-type GaN exposed after etching by adopting a sputtering method;
(9) Annealing the sample with the electrode in the air atmosphere at 600 ℃ for 5 min;
(10) Depositing 300 nm SiO on the surface of the sample by adopting Plasma Enhanced Chemical Vapor Deposition (PECVD) technology 2 Passivating the protective layer by Reactive Ion Etching (RIE) 2 Etching off the passivation layer;
(11) Finally, one side of the bottom surface of the substrate is ground to form a 45-degree angle.
When the device works, ultraviolet light enters from the right upper side and reaches the periodic heterostructure absorption layer through the Ni/Au transparent electrode and the p-type GaN upper electrode contact layer to generate interband absorption. For infrared light, it will be incident from a 45 ° slope to satisfy the polarization selection condition for the sub-band transition, i.e. the incident light will have an electric field component perpendicular to the epitaxial growth plane.
As shown in fig. 3, for the calculated periodic heterostructure absorber (only 6 periods are given) conduction band diagram and electron wavefunction distribution, 301 is the ground state wavefunction distribution and 303 is the excited state wavefunction distribution. According to the calculation result, the energy difference between the ground state energy level and the excited state energy level is about 0.8 eV, which means that a response will be generated to the near infrared of the wavelength around 1.55 μm. For ultraviolet light, the long-wave absorption edge is near 320 nm according to the calculation result of the conduction band ground state energy level and the valence band ground state energy level, namely, the ultraviolet light is basically not responded to light waves with the wavelength longer than 320 nm.
Example 2
As shown in fig. 4, a cross-sectional view of the device structure according to embodiment 2 is shown, where 201 is a substrate, 203 is a buffer layer, 101 is a lower electrode contact layer, 103 is an intrinsic multiplication layer, 105 is a charge layer, 107 is a periodic heterostructure absorption layer, 109 is an upper electrode contact layer, 205 is a lower ohmic contact electrode, 209 is a first p-type ohmic contact electrode, 211 is a second p-type ohmic contact electrode, and the material growth adopts a Metal Organic Chemical Vapor Deposition (MOCVD).
The preparation method comprises the following steps:
(1) Firstly, growing a GaN buffer layer of 0.5 mu m on a GaN single crystal substrate;
(2) Then growing a 600 nm n-type GaN lower electrode contact layer with the doping concentration of 1 × 10 19 cm -3 ；
(3) Then growing a GaN multiplication layer with the thickness of 200 nm on the n-type GaN lower electrode contact layer, namely an avalanche region;
(4) Growing 150 nm p-type Al on the GaN multiplication layer 0.21 Ga0 .79 N charge layer with p-type doping concentration of 2 × 10 17 cm -3 ；
(5) In p-type Al 0.21 Ga0 .79 GaN/Al with thickness of 4 nm/3 nm is grown for 30 periods on the N charge layer 0.5 Ga0 .5 N heterostructure absorption layer, two thin layer materials alternately growing and keeping strict periodicity, gaN layer N type doping with doping concentration of 5 x 10 19 cm -3 ；
(6) GaN/Al with thickness of 4 nm/3 nm in 30 periods 0.5 Ga0 .5 Regrowth of 100 nm p-type Al over N-heterostructure absorber layer 0.21 Ga 0.79 N upper electrode contact layer with doping concentration of 1 × 10 18 cm -3 In order to improve the ohmic contact characteristic of the p-type electrode, a 20 nm p-type heavily doped GaN layer with a doping concentration of 1 × 10 can be grown 19 cm -3 ；
(7) Etching partial area of the material sample after the growth is finished to an n-type GaN lower electrode contact layer by adopting a standard photoetching process and an ICP (inductively coupled plasma) etching process to form a circular table top structure with the diameter of 100 mu m;
(8) With SiO 2 Etching a circular ring area with the diameter of 50-100 mu m on the circular table top to the charge layer by adopting an ICP (inductively coupled plasma) etching technology for masking, and integrally forming a double-table structure with the diameter of a small table top of 50 mu m and the diameter of a large table top of 100 mu m;
(9) A one-dimensional or two-dimensional grating structure is manufactured on the upper surface of the small table top by adopting a holographic exposure technology and an ICP etching technology;
(10) Depositing an Indium Tin Oxide (ITO) transparent electrode (namely a first p-type ohmic contact electrode) with the thickness of 200 nm on the small table top by adopting an electron beam evaporation technology, depositing a Ni/Au second p-type ohmic contact electrode with the thickness of 30 nm/300 nm on the charge layer, and then depositing a Cr/Au electrode with the thickness of 20 nm/300 nm on the surface of the n-type GaN formed by etching;
(11) Annealing the sample with the electrode in oxygen atmosphere at 500 deg.C for 10 min;
(12) Depositing 300 nm SiN on the surface of a sample by adopting PECVD technology x Passivating the protective layer by RIE technique to remove SiN on the metal electrode x The passivation layer is etched away.
In the material structure, the charge layer and the upper electrode contact layer both adopt Al 0.21 Ga 0.79 The purpose of the N material is to make the lattice constant of the N material basically matched with the lattice constant of the whole structure of the absorption layer, so that a polarization electric field is prevented from being generated in the absorption layer, and the N material is ensured to be in a flat band state. When the device works, ultraviolet light and infrared light are incident from the right upper side and reach the periodic heterostructure absorption layer through the ITO transparent electrode and the upper electrode contact layer, and interband absorption and intersubband absorption are generated respectively. The grating functions to diffract the infrared light, producing an electric field component perpendicular to the epitaxial growth plane that excites the sub-band transitions. Because the grating structure only aims at infrared light, and the size of the grating structure is far larger than the wavelength of ultraviolet light, the grating structure basically does not influence the transmission of the ultraviolet light. The device is controlled by three electrodes, and the voltages applied to the n-type ohmic contact electrode, the first p-type ohmic contact electrode and the second p-type ohmic contact electrode are respectively marked as V n 、V p1 And, andV p2 through V n And V p2 Relative size of the band structure of the multiplication layer, through V p1 And V p2 The relative size of the absorbing layer regulates the band structure of the absorbing layer. In order to allow efficient transport of the photo-generated electrons of the absorption layer into the multiplication layer without depletion of the electrons at the ground level, V is applied p1 Should be slightly less than V p2 While in order to generate a sufficiently large electric field in the multiplication layer, V p2 Should be much less than V n 。
As shown in fig. 5, for the calculated conduction band diagram and electron wave function distribution of the periodic heterostructure absorption layer (only 4 periods are given) of the device of the embodiment, 301 is a ground wave function distribution, and 303 is an excited wave function distribution. According to the calculation result, the energy difference between the ground state energy level and the excited state energy level is about 0.27 eV, and the peak infrared response wavelength of the device is about 4.6 [ mu ] m. For ultraviolet light, according to the calculation results of the conduction band ground state energy level and the valence band ground state energy level, the long-wave absorption limit is about 340 nm, namely, the ultraviolet light basically does not respond to light waves with the wavelength longer than 340 nm.
Claims (9)
1. The monolithically integrated ultraviolet-infrared bi-color avalanche photodiode is characterized in that a material structure of the diode comprises from bottom to top: the semiconductor device comprises a substrate, a buffer layer, a lower electrode contact layer, an intrinsic multiplication layer, a charge layer, a periodic heterostructure absorption layer and an upper electrode contact layer; the transition of an electron from the conduction band ground state level to the excited state level in the periodic heterostructure absorber layer corresponds to the absorption of an infrared photon and the transition from the valence band to the conduction band corresponds to the absorption of an ultraviolet photon; the intrinsic multiplication layer is a region where photo-generated electrons are subjected to collision ionization.
2. The monolithically integrated ultraviolet-infrared bi-color avalanche photodiode of claim 1, wherein: the periodic heterostructure absorption layer is formed by alternately growing two heterojunction materials, forms a quantum well structure with the period number of 1-500, the thickness of a potential well is 0.001-0.02 mu m, and the n-type doping concentration is 5 multiplied by 10 17 cm -3 To 5X 10 19 cm -3 Potential between quantum wellsThe barrier thickness is 0.001-0.02 μm.
3. The monolithically integrated ultraviolet-infrared bi-color avalanche photodiode of claim 2, wherein: the quantum well structure and the buffer layer, the lower electrode contact layer, the intrinsic multiplication layer, the charge layer and the upper electrode contact layer are any one or different materials in the following material systems: alGaN, inGaN, inAlN, inAlGaN, and SiC.
4. The monolithically integrated ultraviolet-infrared bi-color avalanche photodiode of claim 1, wherein: the intrinsic multiplication layer has a thickness of 0.05 μm to 1.0 μm.
5. The monolithically integrated ultraviolet-infrared bi-color avalanche photodiode of claim 1, wherein: the n-type doping concentration of the lower electrode contact layer is 1 x 10 17 cm -3 To 5X 10 19 cm -3 And a thickness of 0.1 to 10 μm.
6. The monolithically integrated ultraviolet-infrared bi-color avalanche photodiode of claim 1, wherein: the p-type doping concentration of the charge layer is 1 × 10 17 cm -3 To 1X 10 19 cm -3 And 0.01 to 0.15 μm thick.
7. The monolithically integrated ultraviolet-infrared bi-color avalanche photodiode of claim 1, wherein: the upper electrode contact layer is doped with p-type dopant with the doping concentration of 1 × 10 17 cm -3 To 1X 10 19 cm -3 And a thickness of 0.05 to 0.2 μm.
8. The monolithically integrated ultraviolet-infrared bi-color avalanche photodiode of claim 1, wherein: the substrate is any one of sapphire, gallium nitride, aluminum nitride, silicon carbide, silicon and zinc oxide, and the thickness of the substrate is 10-600 mu m.
9. A method of manufacturing a monolithically integrated uv-ir bi-color avalanche photodiode according to any one of claims 1 to 8, characterized by the steps of: 1) Growing a buffer layer on a substrate; 2) Growing a lower electrode contact layer on the buffer layer; 3) Growing an intrinsic multiplication layer on the lower electrode contact layer; 4) Growing a charge layer over the intrinsic multiplication layer; 5) Growing a periodic heterostructure absorber layer over the charge layer; 6) Growing an upper electrode contact layer over the periodic heterostructure absorber layer; 7-1) manufacturing an n-type ohmic contact electrode on the lower electrode contact layer, and manufacturing a p-type ohmic contact electrode on the upper electrode contact layer; 7-2) or manufacturing an n-type ohmic contact electrode on the lower electrode contact layer, manufacturing a p-type ohmic contact electrode on the upper electrode contact layer, and adding another p-type ohmic contact electrode on the charge layer to form a three-electrode control device; 8) In order to realize the coupling of near infrared light, one side surface of a substrate of the manufactured device is made into an inclined surface, or a one-dimensional grating or a two-dimensional grating is manufactured on an upper electrode contact layer before a p-type ohmic contact electrode is manufactured.
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