CN106842826A - A kind of large scale splices product exposure method - Google Patents

A kind of large scale splices product exposure method Download PDF

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Publication number
CN106842826A
CN106842826A CN201710190123.XA CN201710190123A CN106842826A CN 106842826 A CN106842826 A CN 106842826A CN 201710190123 A CN201710190123 A CN 201710190123A CN 106842826 A CN106842826 A CN 106842826A
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China
Prior art keywords
areas
functional unit
exposure
light shield
splices
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Granted
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CN201710190123.XA
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CN106842826B (en
Inventor
李飞
吴鹏
郑海昌
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Shanghai Huali Microelectronics Corp
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Shanghai Huali Microelectronics Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/22—Exposing sequentially with the same light pattern different positions of the same surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The invention discloses the exposure method that a kind of large scale splices product, comprise the following steps：Light shield is divided into six regions；Funtion part and non-functional part are selected on wafer, the funtion part is formed by complete functional unit splicing exposure, and non-functional part is formed by the splicing exposure of incomplete functional unit；Splicing exposure complete functional unit；The incomplete functional unit of splicing exposure；By all splicing exposures of funtion part in wafer and non-functional part, wherein incomplete functional unit is identical with complete functional unit size, but exposure frequency is far smaller than the exposure frequency of complete functional unit.A kind of large scale splicing product exposure method that the present invention is provided, with exposure frequency is reduced, improves alignment intensive reading and splicing alignment, it is to avoid the good characteristic of photo-shield strip shape growth line.

Description

A kind of large scale splices product exposure method
Technical field
The present invention relates to IC manufacturing field, and in particular to a kind of large scale splices product exposure method.
Background technology
With digital technology, the development of semiconductor fabrication, imageing sensor is used as the photoelectric cell in opto-electronics Class, its development speed can be described with making rapid progress.Some astronomical telescopes, silent frame digital camera, medical imaging etc. are specially Industry imaging applications field is accomplished by using large-sized imageing sensor.And these large-sized imageing sensors are due to having surpassed Cross the image field of litho machine, 26*33 millimeters of single exposure full-size, therefore in the fabrication process, it is necessary to using to splicing. Splicing, as the term suggests it is exactly in the manufacturing process of chip, the pattern zoning being related in light shield, in complete function The corresponding area of selection exposes successively in unit (shot), ultimately forms complete functional unit, then be spliced into a large-sized figure Shape sensor.
According to the large scale product that splicing process is produced, each functional unit needs to carry out multiexposure, multiple exposure in wafer, normally Exposure mode expose wafer and need the exposure of up to hundreds of times, multiple exposure be easily caused light shield be heated, litho machine mirror Head is heated, so that the alignment between alignment precision and splicing is influenceed, if splicing misregistration, can cause figure deformation, such as the institute of accompanying drawing 1 Show.
In order to reduce exposure frequency, in the prior art generally using polylith light shield expose by the way of, i.e., according in wafer not With the requirement in region, different light shield templates are produced, be then spliced into needs according to the mode of different light shields splicing exposure Product wafer, as shown in Figure 2.This method has both sides defect：(1) exposing different regions needs different light shields, Polylith light shield is relatively costly；(2) exposure type can only select ASML litho machines.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of large scale splicing product exposure method, are exposed with reducing Number of times, improves alignment intensive reading and splicing alignment, it is to avoid the good characteristic of photo-shield strip shape growth line.
In order to achieve the above object, the present invention is adopted the following technical scheme that：A kind of large scale splices the exposure method of product, Wherein, comprise the following steps：
S1：Light shield is divided into six regions, respectively PIXEL1 areas, M1 areas, T1 areas, T2 areas, M2 areas and PIXEL2 areas, And there is a photo-shield strip between each region；
S2：Funtion part and non-functional part are selected on wafer, the funtion part is two groups of symmetrical complete work( Energy unit spliced exposure is formed, and except funtion part remaining area is non-functional part in wafer, the non-functional part is by non- Complete functional unit splicing exposure is formed, and the incomplete functional unit is identical with complete functional unit size；
S3：The complete functional unit is divided into symmetrical M region, and six regions chosen in light shield are spliced successively Exposure forms complete functional unit；
S4：According to the operation of S3, by complete functional unit all splicing exposures that two groups symmetrical in funtion part；
S5：The incomplete functional unit is divided into symmetrical N number of region, and N is the even number more than 4, in selection light shield Four regions splice 4 regions for being exposed on the top and bottom in the incomplete functional unit successively, choose light shield In be equal to the adjacent area of photo-etching machine exposal size and splice be exposed on remaining N-4 region successively；
S6：According to the operation of S5, by all splicing exposures of incomplete functional unit in non-functional part in wafer.
Further, in the step S3 during M=20, T1 areas and M1 areas are exposed on complete work(successively respectively in selection light shield Above and below the left side of energy unit, T2 areas and M2 areas are exposed on the right side of complete functional unit successively respectively in selection light shield Side and lower section, the PIXEL1 areas during the centre in T1 areas and M1 areas exposes 8 light shields successively in the complete functional unit, in complete work( The centre in T2 areas and M2 areas exposes the PIXEL2 areas in 8 light shields successively in energy unit, forms the complete of each 10 regions in left and right Functional unit.
Further, alignment mark is placed in the light shield Zhong M1 areas, T1 areas, T2 areas and M2 areas.
Further, funtion part contains 6 complete functional units in the wafer, and the mode arranged according to two row three is spelled Connect, and gap is left between two row's complete functional units.
Further, funtion part contains 6 complete functional units in the wafer, and the mode arranged according to three row two is spelled Connect, and gap is left between two row complete functional units.
Further, N=8 in the step S5, T1 areas and M1 areas are exposed on incomplete work(successively respectively in selection light shield Above and below the left side of energy unit, T2 areas and M2 areas are exposed on the right side of incomplete functional unit successively respectively in selection light shield Above and below, it is equal to the adjacent area of photo-etching machine exposal size in selection light shield and splices 4 regions in the middle of exposure successively；Wherein Two regions in the middle of left side are designated as A1 areas, and two in the middle of right side region is designated as A2 areas.
Further, the exposure template in the A1 areas be light shield in accordance with the order from top to bottom be equal to photo-etching machine exposal chi Very little adjacent area.
Further, the exposure template in the A2 areas be light shield according to order from top to bottom be equal to photo-etching machine exposal chi Very little adjacent area.
Further, the position of photo-shield strip is staggered in the horizontal direction Shang A1 areas and A2 areas.
Beneficial effects of the present invention are：(1) the different districts domain needed in marking off wafer on light shield, it is only necessary to a piece Light shield template can be achieved with whole exposures of wafer, save light shield cost；(2) to complete functional unit, using small in light shield The mode that region exposes successively, meets the functional requirement in complete functional unit, to incomplete functional unit, using litho machine most The mode of large scale exposure, greatly reduces exposure frequency so that the reduction of litho machine working strength, can monitor well whole The alignment precision and splicing alignment precision of product；(3) left and right sides exposure template is different in incomplete functional unit, the left and right sides The unexposed area that middle photo-shield strip leaves mutually staggers, it is to avoid line very long is formed on product, so as to influence subsequent technique.
Brief description of the drawings
Fig. 1 is to splice the figure deformation caused during misregistration.
Fig. 2 is that polylith light shield exposes connecting method.
Fig. 3 is the splicing exposure schematic diagram of complete functional unit in the present invention.
Fig. 4 is the splicing exposure schematic diagram of incomplete functional unit in the present invention.
Fig. 5 is the tactic product schematic diagram that complete functional unit is arranged according to three row two in the present invention.
Fig. 6 is the tactic product schematic diagram that complete functional unit is arranged according to two row three in the present invention.
In figure：1 complete functional unit, 2 incomplete functional units.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to specific reality of the invention The mode of applying is described in further detail.
A kind of large scale splices the exposure method of product, comprises the following steps：
S1：Rectangle light shield is divided into six regions from top to bottom, from top to bottom respectively PIXEL1 areas, M1 areas, T1 Area, T2 areas, M2 areas and PIXEL2 areas, the length in six regions is equal between the width of light shield, and each region one Bar photo-shield strip.
, less than the maximum exposure size of litho machine, whole light shield size is more than litho machine for the size in each region in light shield Maximum exposure size, and alignment mark is placed in M1 areas, T1 areas, T2 areas and M2 areas, for the process in splicing exposure Alignment precision and splicing alignment precision in middle monitoring wafer.
S2：Funtion part and non-functional part are selected on wafer, the funtion part is two groups of symmetrical complete work( Can unit spliced exposure form, in funtion part contain 6 complete functional units, arranged according to three rows two or two row three row side Formula splices funtion part in wafer, and leaves gap between symmetrical two groups, and when facilitating later stage Defect Scanning, two groups complete Contrasted between whole functional unit.
Except funtion part remaining area is non-functional part in wafer, the non-functional part is by incomplete functional unit Splicing exposure is formed, and the incomplete functional unit is identical with complete functional unit size；
S3：As shown in figure 3, complete functional unit is divided into symmetrical 20 regions, T1 areas and M1 areas in light shield are chosen It is exposed on above and below the left side of complete functional unit respectively, wherein T1 areas are distributed in the left side top of complete functional unit, M1 areas are distributed in the left side lower section of complete functional unit, choose the PIXEL1 regions in light shield, are exposed in complete functional unit T1 areas and the centre in M1 areas, are that template exposes by 8 times with the PIXEL1 regions in light shield, are formed in T1 areas and the middle of M1 areas Eight PIXEL1 areas being vertically arranged.
As shown in figure 3, choose T2 areas and M2 areas in light shield be exposed on above and below the right side of complete functional unit respectively, Wherein above the parallel right side for being distributed in complete functional unit in T2 areas, M2 areas are distributed in the lower right-hand side of complete functional unit, select The PIXEL2 regions in light shield are taken, the centre in T2 areas and M2 areas in complete functional unit is exposed on, with the PIXEL2 areas in light shield Domain is that template exposes by 8 times, and eight PIXEL2 areas being vertically arranged are formed in T2 areas and the middle of M2 areas.In sum, adopt A complete functional unit is formed with the mode of splicing exposure to be needed to carry out 20 exposures.
S4：According to the operation of S3, by complete functional unit all splicing exposures that two groups symmetrical in funtion part；
S5：As shown in figure 4, incomplete functional unit is divided into symmetrical 8 regions, T1 areas and M1 areas in light shield are chosen It is exposed on respectively above and below the left side of incomplete functional unit, wherein T1 areas are distributed on the left side of incomplete functional unit Side, M1 areas are distributed in the left side lower section of incomplete functional unit, are equal to photo-etching machine exposal size in selection light shield from top to bottom Adjacent area, is designated as A1 areas, and A1 areas include PIXEL1 areas, M1 areas, T1 areas, T2 areas and part M2 areas.By A1 areas in T1 areas and M1 It is exposed in the middle of area, is that template exposes by 2 times with the A1 regions in light shield, the middle formation 2 in T1 areas and M1 areas is erected In line Lie A1 areas.
As shown in figure 4, choose T2 areas and M2 areas in light shield being exposed on respectively above the right side of incomplete functional unit with Side, wherein T2 areas are distributed in the right side top of incomplete functional unit, and M2 areas are distributed in the lower right-hand side of incomplete functional unit, The adjacent area of photo-etching machine exposal size is equal in selection light shield from top to bottom, A2 areas are designated as, A2 areas include M1 areas, T1 areas, T2 Area, M2 areas and PIXEL2 areas.It is that template exposes by 2 times with the A2 regions in light shield, 2 is formed in T2 areas and the middle of M2 areas The A2 areas being vertically arranged.
Because having photo-shield strip between six regions in light shield, there is the unexposed of photo-shield strip formation in A1 areas and A2 areas Region, but A1 areas and A2 areas, according to part different in different order selection light shield, photo-shield strip just offsets one from another, it is to avoid Line very long is formed on product, so as to influence subsequent technique.
In sum, an incomplete functional unit is formed by the way of exposure is spliced to be needed to carry out 8 exposures, is compared In complete functional unit, exposure frequency is greatly reduced.
S6：According to the operation of S5, by incomplete functional unit in non-functional part in wafer, all splicing exposes, now shape Product is exposed into complete splicing.
As shown in Figure 5 and Figure 6, Fig. 5 is that 6 complete functional units splice the work(in wafer according to the mode that three row two arranges The final products of energy part, including complete functional unit 1 and incomplete functional unit 2.Fig. 6 be 6 complete functional units according to The row mode of two row three splices the final products of the funtion part in wafer, including complete functional unit 1 and incomplete function list Unit 2.
The preferred embodiments of the present invention are the foregoing is only, the embodiment is not intended to limit patent protection of the invention Scope, therefore every equivalent structure change made with specification of the invention and accompanying drawing content, similarly should be included in this In the protection domain of invention appended claims.

Claims (9)

1. a kind of large scale splices the exposure method of product, it is characterised in that comprise the following steps：
S1：Light shield is divided into six regions, respectively PIXEL1 areas, M1 areas, T1 areas, T2 areas, M2 areas and PIXEL2 areas, and There is a photo-shield strip between each region；
S2：Funtion part and non-functional part are selected on wafer, the funtion part is two groups of symmetrical complete function lists Unit's splicing exposure is formed, and except funtion part remaining area is non-functional part in wafer, the non-functional part is by incomplete Functional unit splicing exposure is formed, and the incomplete functional unit is identical with complete functional unit size；
S3：The complete functional unit is divided into symmetrical M region, and exposure is spliced in six regions chosen in light shield successively Form complete functional unit；
S4：According to the operation of S3, by complete functional unit all splicing exposures that two groups symmetrical in funtion part；
S5：The incomplete functional unit is divided into symmetrical N number of region, and N is the even number more than 4, and in selection light shield four 4 regions for being exposed on the top and bottom in the incomplete functional unit are spliced in individual region successively, choose light shield medium Splice successively in the adjacent area of photo-etching machine exposal size and be exposed on remaining N-4 region；
S6：According to the operation of S5, by all splicing exposures of incomplete functional unit in non-functional part in wafer.
2. a kind of large scale according to claim 1 splices the exposure method of product, it is characterised in that in the light shield Alignment mark is placed in M1 areas, T1 areas, T2 areas and M2 areas.
3. a kind of large scale according to claim 1 splices the exposure method of product, it is characterised in that in the step S3 During M=20, T1 areas and M1 areas are exposed on above and below the left side of complete functional unit successively respectively in selection light shield, choose light Zhao Zhong T2 areas and M2 areas are exposed on above and below the right side of complete functional unit successively respectively, the T1 areas in complete functional unit Expose the PIXEL1 areas in 8 light shields successively with the centre in M1 areas, the centre in T2 areas and M2 areas is successively in complete functional unit PIXEL2 areas in 8 light shields of exposure, form the complete functional unit in each 10 regions in left and right.
4. a kind of large scale according to claim 1 splices the exposure method of product, it is characterised in that work(in the wafer 6 complete functional units can partly be contained, the mode arranged according to two row three is spliced, and is left between two row's complete functional units Gap.
5. a kind of large scale according to claim 1 splices the exposure method of product, it is characterised in that work(in the wafer 6 complete functional units can partly be contained, the mode arranged according to three row two is spliced, and is left between two row complete functional units Gap.
6. a kind of large scale according to claim 1 splices the exposure method of product, it is characterised in that in the step S5 N=8, T1 areas and M1 areas are exposed on above and below the left side of incomplete functional unit successively respectively in selection light shield, choose light Zhao Zhong T2 areas and M2 areas are exposed on above and below the right side of incomplete functional unit successively respectively, and photoetching is equal in selection light shield The adjacent area of machine exposure size splices be exposed on middle 4 regions successively；Wherein two regions of identical are designated as in the middle of left side Two regions of identical are designated as A2 areas in the middle of A1 areas, right side.
7. a kind of large scale according to claim 6 splices the exposure method of product, it is characterised in that the exposure in the A1 areas Optical mode plate be light shield in accordance with the order from top to bottom equal to photo-etching machine exposal size adjacent area.
8. a kind of large scale according to claim 6 splices the exposure method of product, it is characterised in that the exposure in the A2 areas Optical mode plate is the adjacent area in light shield according to order from top to bottom equal to photo-etching machine exposal size.
9. a kind of large scale according to claim 6 splices the exposure method of product, it is characterised in that the horizontal direction The position of photo-shield strip is staggered in Shang A1 areas and A2 areas.
CN201710190123.XA 2017-03-27 2017-03-27 A kind of large scale splicing product exposure method Active CN106842826B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110471259A (en) * 2019-06-19 2019-11-19 上海华力微电子有限公司 Chip joining method
CN110875343A (en) * 2019-11-28 2020-03-10 上海华力微电子有限公司 Layout structure, mask plate and manufacturing method of super-large pixel splicing product
WO2021068328A1 (en) * 2019-10-10 2021-04-15 Tcl华星光电技术有限公司 Spliced exposure system and spliced exposure method using same
CN113764262A (en) * 2021-07-19 2021-12-07 中国科学院微电子研究所 Preparation method and equipment of large-size high-precision chip

Citations (4)

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Publication number Priority date Publication date Assignee Title
JPS61240281A (en) * 1985-04-17 1986-10-25 キヤノン株式会社 Display unit
US5705299A (en) * 1992-12-16 1998-01-06 Texas Instruments Incorporated Large die photolithography
CN104298080A (en) * 2014-11-06 2015-01-21 苏州苏大维格光电科技股份有限公司 Maskless laser direct writing stacking exposure method
CN104570611A (en) * 2013-10-21 2015-04-29 合肥京东方光电科技有限公司 Mask plate and method for reducing splicing exposure mula phenomenon

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61240281A (en) * 1985-04-17 1986-10-25 キヤノン株式会社 Display unit
US5705299A (en) * 1992-12-16 1998-01-06 Texas Instruments Incorporated Large die photolithography
CN104570611A (en) * 2013-10-21 2015-04-29 合肥京东方光电科技有限公司 Mask plate and method for reducing splicing exposure mula phenomenon
CN104298080A (en) * 2014-11-06 2015-01-21 苏州苏大维格光电科技股份有限公司 Maskless laser direct writing stacking exposure method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110471259A (en) * 2019-06-19 2019-11-19 上海华力微电子有限公司 Chip joining method
WO2021068328A1 (en) * 2019-10-10 2021-04-15 Tcl华星光电技术有限公司 Spliced exposure system and spliced exposure method using same
CN110875343A (en) * 2019-11-28 2020-03-10 上海华力微电子有限公司 Layout structure, mask plate and manufacturing method of super-large pixel splicing product
CN113764262A (en) * 2021-07-19 2021-12-07 中国科学院微电子研究所 Preparation method and equipment of large-size high-precision chip
CN113764262B (en) * 2021-07-19 2024-04-02 中国科学院微电子研究所 Preparation method and equipment of large-size high-precision chip

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