CN106842370A - A kind of method for improving inorganic scintillation crystal light output - Google Patents
A kind of method for improving inorganic scintillation crystal light output Download PDFInfo
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- CN106842370A CN106842370A CN201611189566.9A CN201611189566A CN106842370A CN 106842370 A CN106842370 A CN 106842370A CN 201611189566 A CN201611189566 A CN 201611189566A CN 106842370 A CN106842370 A CN 106842370A
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- crystal
- scintillation crystal
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- bead
- scintillation
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/202—Measuring radiation intensity with scintillation detectors the detector being a crystal
Abstract
The invention discloses a kind of method for improving inorganic scintillation crystal light output, by improving inorganic scintillation crystal light output, so as to improve inorganic scintillation crystal detectors energy resolution, time resolution, detection efficient.The method meets scintillation crystal emission wavelength in inorganic scintillation crystal light gasing surface, the micro-structural photonic crystal of manufacturing cycle arrangement, photon crystal microstructure yardstick.The electromagnetic coupling effect of scintillation crystal surface photon crystal, makes when critical angle of the refraction angle of crystal emergent light more than total reflection, and still some photon is from the outgoing of scintillation crystal interface.The present invention is effectively improved the light output of inorganic scintillation crystal, makes energy resolution, temporal resolution, the detection efficient of radiation detector, is all greatly improved.
Description
Technical field
The present invention relates to scintillation crystal technical field, and in particular to a kind of method of raising inorganic scintillation crystal light output.
Background technology
Scintillator is one of most ancient particle detector of measurement nuclear radiation.As the core of scintillator detector, dodge
Bright body light output affects energy resolution, temporal resolution and the detection efficient of detector.Passage of scintillation light is in scintillator with 4 π
Solid angle is launched, if the refractive index of scintillator is n1, the medium refraction index around scintillator is n2, then its interface passage of scintillation light be all-trans
The critical angle penetrated is：Passage of scintillation light is depending on the mode that interface is propagated will be by incidence angle θ, if θ is more than θc, will send out
Raw total internal reflection；If θ is less than θc, will there is partial internal reflection and part reflect.Internal reflection passage of scintillation light cannot shine scintillator
Outside, causes scintillator light output to lose.Because inorganic scintillation crystal differs larger with air refraction, dodged at outgoing interface
Bright light cannot be shone outside scintillator because of experiences total internal reflection.
Tradition overcomes photon to be mainly change scintillator roughness in the method that scintillator light gasing surface reflects, or in flicker
Optical coupled dose (such as optical clear silicone grease) of index matching is added between body and photo-detector.Change scintillator roughness,
This processing technology is uncontrollable, as a result there is randomness；Optical coupled dose is mainly used in matching scintillator and enters with light-detecting device
The refractive index of window is penetrated, the effect for lifting light output is extremely limited.
It can be seen that, the effect of conventional method lifting inorganic scintillator light output is extremely limited, it is impossible to overcome Inorganic scintillation completely
Body is because of the low problem of light extraction efficiency that high index of refraction is brought.
The content of the invention
In view of this, the invention provides a kind of method for improving inorganic scintillation crystal light output, inorganic scintillation crystal is made
Light output increase, luminescence decay time reduce, so as to improve the time resolution and energy resolution of Inorganic scintillation bulk detector, carry
The detection efficient of Inorganic scintillation bulk detector high.
In order to solve the above-mentioned technical problem, the present invention is in scintillation crystal light gasing surface, the micro-structural of manufacturing cycle arrangement
Photonic crystal, photon crystal microstructure yardstick meets scintillation crystal emission wavelength.The program is with photonic crystal to flicker body surface
Face is modified, the electromagnetism modulating action lighted to scintillation crystal using the micro-nano periodic structure of photonic crystal, improves inorganic sudden strain of a muscle
Bright crystal light extraction efficiency so that the light output of scintillation crystal increases, luminescence decay time reduces, so as to improve scintillator detection
The time resolution and energy resolution of device, improve the detection efficient of scintillator detector.
One of technical solution of the invention is：Mixed uniformly bead solution is prepared, the diameter of the bead meets
Scintillation crystal emission wavelength；Bead solution is dropped in into silicon chip surface, film is formed；Film is put into deionized water, bead exists
Ordered arrangement is spontaneously formed on the water surface；The bead of oldered array is transferred to scintillation crystal surface with czochralski method, so as in flicker
Plane of crystal forms the polystyrene sphere periodic structure of ordered arrangement, forms photon crystal structure.
Wherein, it is described to prepare mixed uniformly bead solution and be：Using polystyrene sphere and absolute ethyl alcohol (chemistry is pure)
Mixing, ultrasonic disperse is carried out by mixed solution, forms the mixed uniformly bead solution.Or, using bead solution and nothing
Water-ethanol (chemistry is pure) solution 1：1 mixing, ultrasonic disperse is carried out by mixed solution, obtains well mixed bead solution.
Preferably, the scintillation crystal surface in advance to photonic crystal to be prepared improve the pretreatment of surface hydrophilicity：
The scintillation crystal surface of photon crystal structure to be prepared is bombarded with oxygen plasma.
Preferably, to silicon chip increase the pretreatment of surface-active in advance：Lauryl sodium sulfate is mixed with deionized water
Conjunction is configured to the solution that mass fraction is 20%, and silicon chip is immersed in solution, and immersion is taken out after 12 hours, cleans and dry table
Face.
The two of technical solution of the invention are：Formed in scintillation crystal light gasing surface using photoetching technique and periodically arranged
The photon crystal structure of row.
Preferably, the scintillation crystal surface in advance to photonic crystal to be prepared improve the pretreatment of surface hydrophilicity：
The scintillation crystal surface of photon crystal structure to be prepared is bombarded with oxygen plasma.
The principle of such scheme is：The micro-structural photonic crystal on scintillation crystal surface, structure dimension is luminous for scintillation crystal
Wavelength magnitude, the reciprocal lattice vector of photonic crystal periodic structure can be coupled with the wave vector in scintillation crystal so that be flashed originally brilliant
The photon for exciting in vivo, when being transferred to scintillation crystal light-emitting face, incidence angle enters more than the partial photonic of the cirtical angle of total reflection
Outgoing light cone, makes to increase from the number of photons of scintillation crystal light gasing surface outgoing.
Beneficial effect：
The present invention uses the method for preparing photonic crystal in plane of crystal to improve scintillation crystal light output, is improved with tradition and dodged
The method of bright crystal light output is compared, and mainly has 3 advantages, and being first can be in the case where scintillator configuration not be changed, very
The positive limitation for breaking through total internal reflection, realizes broadband light extraction；Next to that the direction of emergent light can be regulated and controled, make visible ray along specific
Direction outgoing；It is finally that there is practicality higher, different scintillators can be directed to, prepares the photonic crystal of optimum structure.
Brief description of the drawings
Fig. 1 is the schematic diagram that the present invention prepares micro-structural photonic crystal in scintillation crystal light gasing surface；
Fig. 2 is the side view of Fig. 1；
Schematic diagram when Fig. 3 (a) is propagation of the passage of scintillation light of scintillation crystal transmitting between two kinds of different mediums；
Fig. 3 (b) is to be more than the partial photonic of critical angle from the signal of light gasing surface outgoing the invention enables script incidence angle
Figure；
Wherein, 1- scintillation crystals, 2- photonic crystals.
Specific embodiment
Develop simultaneously embodiment below in conjunction with the accompanying drawings, and the present invention will be described in detail.
As shown in figure 1, the present embodiment is by taking CsI scintillation crystals as an example, by CsI scintillation crystal light gasing surface manufacturing cycles
Property arrangement micro-structural photonic crystal method, improve CsI scintillation crystal light outputs.Wherein, photon crystal microstructure yardstick symbol
Close scintillation crystal emission wavelength.
During the propagation of the passage of scintillation light between two kinds of different mediums of scintillation crystal transmitting, wave vector is incident in and if only if crystal
Angle is less than critical angle θcWhen, the light that scintillator sends can be just shone in air, such as Fig. 3 (a).After addition photonic crystal, the cycle
Property micro-structural can be coupled with the wave vector in crystal under certain condition so that script incidence angle more than critical angle part light
Son is from light gasing surface outgoing, such as Fig. 3 (b) so that scintillation crystal light output is further improved.
Embodiment 1
The present embodiment realizes the preparation of photonic crystal using bead solution.
Specifically preparation method is：Mixed uniformly bead solution is prepared, the small ball's diameter in the bead solution meets flicker
Crystallo-luminescence wavelength.Specifically, hundred nanoscale dielectric materials can be used according to wavelength, such as a diameter of hundreds of nanometers gather
Styrene bead.Bead solution is dropped in into silicon chip surface, film is formed, film is put into deionized water, bead is on the water surface
Spontaneously form ordered arrangement；The bead of oldered array is transferred to scintillation crystal surface with czochralski method, photon crystal structure is formed.
Specifically, comprise the following steps：
(1) CsI scintillation crystal surface hydrophilicities are improved.Scintillator surface is bombarded with oxygen plasma 2 minutes, have surface
There is hydrophily, it is ensured that the small ball array on the water surface can intactly be transferred to scintillator surface.
(2) silicon chip surface activity is increased.It is 20% that lauryl sodium sulfate is hybridly prepared into mass fraction with deionized water
Solution, silicon chip is immersed in solution, and immersion is taken out after 12 hours, cleans and dry surface.
(3) bead solution is prepared.Tried one's best equal polystyrene sphere using diameter and scintillation crystal emission wavelength, with nothing
Water-ethanol (chemistry is pure) mixing, ultrasonic disperse is carried out by mixed solution, forms bead solution.Or, take respectively bead solution with
Absolute ethyl alcohol (chemistry is pure) solution 1：1 mixing, ultrasonic disperse is carried out by mixed solution, is well mixed bead.
(4) film is formed.Silicon chip is placed in smooth desktop, several bead solution for preparing that drip continuously is dripped in silicon chip table
Face, pellet free drawout comes, and after solvent volatilization, forms film.
(5) film is shifted.The silicon chip inclination that will be covered with film is put into deionized water, and bead is spontaneously formed on the water surface
Ordered arrangement, is transferred to scintillator surface with czochralski method by the bead of ordered arrangement afterwards, forms photonic crystal.
Embodiment 2
The present embodiment realizes the preparation of photonic crystal using photoetching technique.
Specifically preparation method is：Using laser lithography and the method for sense coupling, portrayed using laser
Required figure on photoresist, then by plasma etching by the pattern transfer on photoresist to CsI scintillation crystals
Surface, photonic crystal is formed in CsI planes of crystal.Specifically, comprise the following steps：
(1) it is surface-treated.CsI planes of crystal 2 minutes (min) is bombarded with oxygen plasma, surface characteristic is changed into from hydrophobic
It is hydrophilic, increase the degree of adhesion of photoresist and CsI crystal.
(2) whirl coating.PMMA A4 (950k, MicroChem) photoresist is got rid of in CsI planes of crystal.Whirl coating rotating speed 4000r/
Min, whirl coating duration 1min.
(3) expose.Figure cycle 300nm, a diameter of 168nm.
(4) develop.Under normal temperature, MIBK is used:IPA(1:3) develop 45s, washes of absolute alcohol 30s, nitrogen gun drying surface.
100 DEG C of temperature is dried afterwards, and duration 90s solidifies PMMA, increases its anti-etching ability.
(5) etch.Using CHF3+O2Process gas system.RF power 200W, voltage 607V, etching gas CHF3, stream
Amount 45sccm, O2Flow 5sccm, etch period 90s.Afterwards with the photoresist that oxygen plasma removal is remaining, RF power 45W,
Voltage 278V, O2Flow 45sccm, scavenging period 2min.
(6) clean.It is cleaned by ultrasonic 10min in acetone, ethanol and deionized water successively, removal surface is in process
Fat-soluble, the water-solubility impurity for introducing.
In sum, presently preferred embodiments of the present invention is these are only, is not intended to limit the scope of the present invention.
All any modification, equivalent substitution and improvements within the spirit and principles in the present invention, made etc., should be included in of the invention
Within protection domain.
Claims (9)
1. a kind of method for improving inorganic scintillation crystal light output, it is characterised in that in the light gasing surface of scintillation crystal (1), system
The micro-structural photonic crystal (2) of standby periodic arrangement, photon crystal microstructure yardstick meets scintillation crystal emission wavelength.
2. the method for claim 1, it is characterised in that the process for preparing photonic crystal is：
Prepare mixed uniformly bead solution；Wherein, the small ball's diameter meets scintillation crystal emission wavelength；
Bead solution is dropped in into silicon chip surface, film is formed；
Film is put into deionized water, bead spontaneously forms ordered arrangement on the water surface；With czochralski method by the small of oldered array
Ball is transferred to scintillation crystal surface, forms the photonic crystal of periodic arrangement.
3. method as claimed in claim 2, it is characterised in that described to prepare mixed uniformly bead solution and be：Using polyphenyl
Ethene bead mixes with absolute ethyl alcohol (chemistry is pure), and mixed solution is carried out into ultrasonic disperse, forms the mixed uniformly bead
Solution.
4. method as claimed in claim 2, it is characterised in that described to prepare mixed uniformly bead solution and be：Using bead
Solution and absolute ethyl alcohol (chemistry is pure) solution 1：1 mixing, ultrasonic disperse is carried out by mixed solution, is formed described mixed uniformly small
Ball solution.
5. the method for claim 1, it is characterised in that the mode for preparing photonic crystal is：Dodged using photoetching technique
Bright crystal light gasing surface forms the photonic crystal of periodic arrangement.
6. the method as described in claim 2 to 5 any one, it is characterised in that the flicker to photonic crystal to be prepared in advance
Plane of crystal improve the pretreatment of surface hydrophilicity.
7. method as claimed in claim 6, it is characterised in that the pretreatment of the improvement surface hydrophilicity is：With oxygen etc. from
The scintillation crystal surface of photonic crystal to be prepared is bombarded in daughter.
8. the method as described in Claims 2 or 3 or 4, it is characterised in that to silicon chip increase the pre- place of surface-active in advance
Reason.
9. method as claimed in claim 8, it is characterised in that：It is described increase surface-active pretreatment be：Dodecyl sulphur
Sour sodium is hybridly prepared into the solution that mass fraction is 20% with deionized water, and silicon chip is immersed in solution, and immersion takes after 12 hours
Go out, clean and dry surface.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108152847A (en) * | 2018-01-31 | 2018-06-12 | 东莞南方医大松山湖科技园有限公司 | Scintillation crystal, crystal module, detector and Positron emission tomography equipment |
| CN108387923A (en) * | 2018-03-15 | 2018-08-10 | 西北核技术研究所 | Packaged type scintillator with layer of photonic crystals and scintillation detector |
| CN108594288A (en) * | 2018-04-25 | 2018-09-28 | 西北核技术研究所 | A kind of surface has the plastic scintillant and preparation method thereof of microlens array |
| CN108761517A (en) * | 2018-04-19 | 2018-11-06 | 同济大学 | A kind of internally-arranged type photonic crystal scintillator |
| WO2019000849A1 (en) * | 2017-06-26 | 2019-01-03 | 同济大学 | Photonic crystal scintillator device having directivity luminescence |
| CN110687571A (en) * | 2019-11-28 | 2020-01-14 | 左慈斌 | Yttrium lutetium silicate scintillation crystal radiation detector with exit surface matched with lens set |
| CN114289876A (en) * | 2021-12-30 | 2022-04-08 | 华中科技大学 | Scintillation crystal and processing method thereof, detector and application thereof |
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| CN104893709A (en) * | 2015-06-09 | 2015-09-09 | 西北核技术研究所 | Surface treatment method for scintillator |
| CN105204114A (en) * | 2015-09-18 | 2015-12-30 | 同济大学 | Photonic crystal wave shifting device for scintillation detection system |
| CN105350077A (en) * | 2015-10-20 | 2016-02-24 | 同济大学 | Preparation method of photonic crystal scintillator by using polymer template |
| US9377542B1 (en) * | 2014-09-18 | 2016-06-28 | Radiation Monitoring Devices, Inc. | Radiation sensor having photonic crystal structure and fabrication method thereof |
| CN106094003A (en) * | 2016-05-20 | 2016-11-09 | 同济大学 | A kind of photonic crystal with composite structure scintillator |
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| US9377542B1 (en) * | 2014-09-18 | 2016-06-28 | Radiation Monitoring Devices, Inc. | Radiation sensor having photonic crystal structure and fabrication method thereof |
| CN104893709A (en) * | 2015-06-09 | 2015-09-09 | 西北核技术研究所 | Surface treatment method for scintillator |
| CN105204114A (en) * | 2015-09-18 | 2015-12-30 | 同济大学 | Photonic crystal wave shifting device for scintillation detection system |
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| CN106094003A (en) * | 2016-05-20 | 2016-11-09 | 同济大学 | A kind of photonic crystal with composite structure scintillator |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019000849A1 (en) * | 2017-06-26 | 2019-01-03 | 同济大学 | Photonic crystal scintillator device having directivity luminescence |
| CN108152847A (en) * | 2018-01-31 | 2018-06-12 | 东莞南方医大松山湖科技园有限公司 | Scintillation crystal, crystal module, detector and Positron emission tomography equipment |
| CN108387923A (en) * | 2018-03-15 | 2018-08-10 | 西北核技术研究所 | Packaged type scintillator with layer of photonic crystals and scintillation detector |
| CN108387923B (en) * | 2018-03-15 | 2023-10-20 | 西北核技术研究所 | Packaged scintillator with photonic crystal layer and scintillation detector |
| CN108761517A (en) * | 2018-04-19 | 2018-11-06 | 同济大学 | A kind of internally-arranged type photonic crystal scintillator |
| CN108594288A (en) * | 2018-04-25 | 2018-09-28 | 西北核技术研究所 | A kind of surface has the plastic scintillant and preparation method thereof of microlens array |
| CN110687571A (en) * | 2019-11-28 | 2020-01-14 | 左慈斌 | Yttrium lutetium silicate scintillation crystal radiation detector with exit surface matched with lens set |
| CN110687571B (en) * | 2019-11-28 | 2024-03-19 | 左慈斌 | Lutetium yttrium silicate scintillation crystal radiation detector with exit face matched with lens group |
| CN114289876A (en) * | 2021-12-30 | 2022-04-08 | 华中科技大学 | Scintillation crystal and processing method thereof, detector and application thereof |
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Application publication date: 20170613 |