CN106835072A - A kind of PECVD double-sided depositions equipment - Google Patents

A kind of PECVD double-sided depositions equipment Download PDF

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Publication number
CN106835072A
CN106835072A CN201710124809.9A CN201710124809A CN106835072A CN 106835072 A CN106835072 A CN 106835072A CN 201710124809 A CN201710124809 A CN 201710124809A CN 106835072 A CN106835072 A CN 106835072A
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CN
China
Prior art keywords
vent board
passage
equipment
gas tank
board
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Pending
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CN201710124809.9A
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Chinese (zh)
Inventor
方结彬
何达能
陈刚
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Guangdong Aiko Solar Energy Technology Co Ltd
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Guangdong Aiko Solar Energy Technology Co Ltd
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Priority to CN201710124809.9A priority Critical patent/CN106835072A/en
Publication of CN106835072A publication Critical patent/CN106835072A/en
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45597—Reactive back side gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45514—Mixing in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45568—Porous nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention discloses a kind of PECVD double-sided depositions equipment, including feeding area, heating chamber, process cavity, cooling area and discharging area, the feeding area, heating chamber, process cavity, cooling area and discharging area are sequentially connected；The process cavity is provided with vent board and lower vent board, and the compressed air source unit connected with upper vent board and lower vent board；The upper vent board and lower vent board are all provided with passage, and upper vent board and lower vent board be arranged in parallel and one is provided between two plates and accommodate the current passage of silicon chip；Plane where upper vent board or lower vent board is 15 degree with horizontal plane angle.Using the present invention, can be in silicon chip positive and negative while depositional coating, reduces the fragment rate of silicon chip, improve production efficiency.

Description

A kind of PECVD double-sided depositions equipment
Technical field
The present invention relates to technical field of solar batteries, more particularly to a kind of PECVD double-sided depositions equipment.
Background technology
In photovoltaic solar industry, the manufacture of high efficiency PERC solar cells will be spread by making herbs into wool, etching, plated film, Silk-screen printing, seven big operations of sintering and annealing.Wherein, the purpose of filming process is using plasma reinforced chemical vapour deposition Method plates pellumina and silicon nitride film in silicon chip back side, and plates silicon nitride film in front side of silicon wafer.
At present, photovoltaic industry plates silicon nitride film, operator using tubular type PECVD or board-like PECVD to silicon chip one side mostly Work inserts in special graphite boat or graphite frame the silicon chip in the gaily decorated basket, or silicon chip is inserted into graphite by automatic charging ＆ discharging machine Boat or graphite frame, are then put into plated film in boiler tube by graphite boat or graphite frame.The silicon nitride film deposition of front and back needs two Secondary plated film, technique is more complicated, and multiple deposition operation easily causes the scuffing of silicon chip, improves fragment rate, is unfavorable for reducing and produces The fraction defective of product.
The content of the invention
The technical problems to be solved by the invention are, there is provided a kind of PECVD double-sided depositions equipment, can be in silicon chip positive and negative Depositional coating, reduces the fragment rate of silicon chip, improve production efficiency simultaneously.
In order to solve the above-mentioned technical problem, the invention provides a kind of PECVD double-sided depositions equipment, including feeding area, plus Hot chamber, process cavity, cooling area and discharging area, the feeding area, heating chamber, process cavity, cooling area and discharging area are sequentially connected；Institute State process cavity and be provided with vent board and lower vent board, and the compressed air source unit connected with upper vent board and lower vent board；
The upper vent board and lower vent board are all provided with passage, and upper vent board and lower vent board be arranged in parallel and between two plates It is provided with one and accommodates the current passage of silicon chip；
Plane where upper vent board or lower vent board is 1-5 degree with horizontal plane angle.
Used as the optimal technical scheme of the PECVD double-sided depositions equipment, the upper vent board is provided with 100-500 ventilation Hole, a diameter of 1-10mm of passage；The lower vent board is provided with 100-500 passage, a diameter of 1-10mm of passage.
Used as the optimal technical scheme of the PECVD double-sided depositions equipment, the passage of the upper vent board is with square matrix-shaped Formula is arranged, and the spacing of passage is 1-10mm；The passage of the lower vent board is arranged with box formation, and the spacing of passage is 1-10mm。
As the optimal technical scheme of the PECVD double-sided depositions equipment, the passage of the upper vent board and lower ventilation The vent arrangement mode of plate is identical with spacing.
Used as the optimal technical scheme of the PECVD double-sided depositions equipment, the compressed air source unit is provided with ammonia gas tank and silicon Alkane gas tank, ammonia gas tank and silane gas tank are connected with upper vent board through conduit；Ammonia gas tank and silane gas tank are passed through with lower vent board Conduit is connected.
Used as the optimal technical scheme of the PECVD double-sided depositions equipment, passage is provided with the first passage and second and leads to Stomata, the first passage is connected with ammonia gas tank, and the second passage is connected with silane gas tank.
Used as the optimal technical scheme of the PECVD double-sided depositions equipment, upper vent board and lower vent board are by quartzy sheet material It is made.
As the optimal technical scheme of the PECVD double-sided depositions equipment, the distance between upper vent board and lower vent board It is 50-300mm.
Implement the embodiment of the present invention, have the advantages that：
PECVD double-sided depositions equipment of the present invention, changes the structure in process cavity on the basis of existing PECVD device, So that silicon chip is suspended between two plates in the presence of upper and lower two pieces of vent board gas injections, and under conditions of HTHP, spray The ammonia and silane gas that shoot out and silicon chip react so as in the positive and negative of silicon chip silicon nitride film simultaneously, reduce weight The number of times of multiple deposition, improve production efficiency reduces fragment rate；And multiple deposition operation easily causes drawing for silicon chip surface Wound, therefore the damage to silicon chip can be reduced using PECVD double-sided depositions equipment of the present invention, improve product percent of pass, product Can more stable reliability.
Brief description of the drawings
Fig. 1 is a kind of structural representation of PECVD double-sided depositions equipment of the invention；
Fig. 2 is a kind of vent arrangement schematic diagram of PECVD double-sided depositions equipment of the invention；
Fig. 3 is a kind of another vent arrangement schematic diagram of PECVD double-sided depositions equipment of the invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with accompanying drawing Step ground is described in detail.
Be placed on silicon chip on graphite boat and be sent into reaction chamber by existing PECVD device, and admission line sprays in reaction chamber Reacting gas, so as to the one side exposed in silicon chip plates film layer.Research however as researcher to solar cell properties Progressively deeply, such as PERC solar cells need to plate pellumina and silicon nitride film in silicon chip back side, and front side of silicon wafer plates nitrogen SiClx film, thus, in battery preparation technique needs to carry out three deposition film forming, and not only step repeats cumbersome, and easily causes silicon chip Scuffing, it is difficult to control the fraction defective of product.
The present inventor has found that the battery front side and the back side all need one layer of plating according to the characteristics of above-mentioned PERC solar cells The process conditions such as silicon nitride film, the reacting gas for being used, temperature, pressure are identical, therefore if the equipment for transforming existing PECVD Being allowed to can be in the positive and negative of silicon chip while silicon nitride film, just can save once redeposited time and operation, raising production Efficiency, reduces fragment rate；It is and multiple deposition operation easily causes the scuffing of silicon chip therefore two-sided using PECVD of the present invention Depositing device can reduce the damage to silicon chip, improve product percent of pass, the more stable reliability of properties of product.
As shown in figure 1, the present invention provides a kind of PECVD double-sided depositions equipment, including feeding area 1, heating chamber 2, process cavity 3rd, cooling area 4 and discharging area 5, the feeding area 1, heating chamber 2, process cavity 3, cooling area 4 and discharging area 5 are sequentially connected；It is described Process cavity 3 is provided with vent board 6 and lower vent board 7, and the compressed air source unit 8 connected with upper vent board 6 and lower vent board 7；
The upper vent board 6 and lower vent board 7 are all provided with passage, and upper vent board 6 and lower vent board 7 be arranged in parallel and in two plates Between be provided with one and accommodate the current passage of silicon chip 9；
Upper vent board 6 or the place plane of lower vent board 7 and horizontal plane angle are 1-5 degree.
Feeding area 1 described in PECVD double-sided depositions equipment of the present invention is provided with feeder makes silicon chip 9 be automatically fed into heating chamber Preheated in 2, then between upper vent board 6 and lower vent board 7 by process cavity 3, reaction gas is sprayed simultaneously in the upper and lower of silicon chip 9 Body, makes silicon chip 9 be suspended between upper vent board 6 and lower vent board 7 through overregulating gas flow rate, under conditions of high-temperature pressurizing The front and back of silicon chip 9 forms silicon nitride film simultaneously, because upper vent board 6 and lower vent board 7 are obliquely installed, in gravity and up and down Under gas shock power collective effect, silicon chip 9 is slowly advanced into channel outlet from channel entrance, after cooling area 4 lowers the temperature, under Material machine is unloaded from PECVD double-sided depositions equipment of the present invention.
It should be noted that upper vent board 6 of the present invention and lower vent board 7 are provided with intensive passage, it is preferable that on Vent board 6 and lower vent board 7 are respectively provided with 100-500 passage, and the requirement according to gas injection flow velocity may be selected a diameter of 1- The passage of 10mm.
Additionally, the passage of the upper vent board 6 is arranged with box formation, the spacing of passage is 1-10mm；Under described The passage of vent board 7 is arranged with box formation, and the spacing of passage is 1-10mm.Preferably, the ventilation of the upper vent board 6 Hole is identical with the vent arrangement mode and spacing of lower vent board 7, consequently facilitating calculating the stressing conditions of silicon chip 9.
Silicon nitride film is formed on silicon chip 9 to be needed to be passed through two kinds of reacting gas of ammonia and silane, therefore, the compressed air source unit 8 are provided with ammonia gas tank and silane gas tank, and a part of passage of upper vent board 6 is connected with silane gas tank, and silane, silane are sprayed downwards Flow velocity is 1500-1800sccm；Another part passage of upper vent board 6 is connected with ammonia gas tank, and ammonia, ammonia flow are sprayed downwards Speed is 4000-10000sccm.A part of passage of lower vent board 7 is connected with silane gas tank, and silane, silane flow velocity are sprayed upwards It is 1800-3000sccm, another part passage of lower vent board 7 is connected with ammonia gas tank, and ammonia is sprayed upwards, and ammonia flow velocity is 5000-12000sccm.Passage is divided into the first passage 10 and the second passage 11 below for the ease of description, first leads to Stomata 10 is connected with ammonia gas tank, sprays ammonia；Second passage 11 is connected with silane gas tank, sprays silane.
Because ammonia is different with the flow velocity of silane, therefore needed the first passage 10 and second in the setting of passage The interval setting of passage 11, so that silicon chip uniform force, is provided below two kinds of implementation methods：
Embodiment 1, such as Fig. 2, the first passage 10 form a line（It is designated as " row "）, the second passage 11 forms a line（It is designated as " two row "）, both line up to form passage square formation in " row-two of-two row of a row-are arranged " spaced mode.
Embodiment 2, such as Fig. 3, the position up and down of the first passage 10 are all set to the second passage 11, correspondingly, The position up and down of the second passage 11 is all set to the first passage 10, thus the passage square formation of regularly arranged formation.
Passage is arranged using above two implementation method, vent board 6 and the gas of lower vent board 7 injection can be made dense Degree evenly, and causes to influence different to silicon chip impulsive force, interval setting because two kinds of gas flow rates of ammonia and silane are different Influence of the gas flow rate to silicon chip stressing conditions can farthest be mitigated.
It should be noted that upper vent board 6 of the present invention and lower vent board 7 are made of quartzy sheet material, and upper ventilation Distance is 50-300mm between plate 6 and lower vent board 7, so that silicon chip passes through between two plates.
In sum, PECVD double-sided depositions equipment of the present invention, work is changed on the basis of existing PECVD device Structure in skill chamber so that silicon chip is suspended between two plates in the presence of upper and lower two pieces of vent board gas injections, high in high temperature Under conditions of pressure, the ammonia and silane gas that eject and silicon chip react so as in the positive and negative of silicon chip while depositing nitrogen SiClx film, reduces the number of times of repeated deposition, improve production efficiency；And multiple deposition operation easily causes the scuffing of silicon chip, Therefore the damage to silicon chip can be reduced using PECVD double-sided depositions equipment of the present invention, improves product percent of pass, properties of product are more It is reliable and stable.
It is last to should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than the present invention is protected The limitation of scope is protected, although being explained in detail to the present invention with reference to preferred embodiment, one of ordinary skill in the art should Understand, technical scheme can be modified or equivalent, without deviating from the essence of technical solution of the present invention And scope.

Claims (8)

1. a kind of PECVD double-sided depositions equipment, it is characterised in that including feeding area, heating chamber, process cavity, cooling area and blanking Area, the feeding area, heating chamber, process cavity, cooling area and discharging area are sequentially connected；The process cavity is provided with vent board with Vent board, and the compressed air source unit connected with upper vent board and lower vent board；
The upper vent board and lower vent board are all provided with passage, and upper vent board and lower vent board be arranged in parallel and between two plates It is provided with one and accommodates the current passage of silicon chip；
Plane where upper vent board or lower vent board is 1-5 degree with horizontal plane angle.
2. PECVD double-sided depositions equipment as claimed in claim 1, it is characterised in that the upper vent board be provided with 100-500 it is logical Stomata, a diameter of 1-10mm of passage；The lower vent board is provided with 100-500 passage, a diameter of 1- of passage 10mm。
3. PECVD double-sided depositions equipment as claimed in claim 1, it is characterised in that the passage of the upper vent board is with square formation Form is arranged, and the spacing of passage is 1-10mm；The passage of the lower vent board is arranged with box formation, the spacing of passage It is 1-10mm.
4. PECVD double-sided depositions equipment as claimed in claim 3, it is characterised in that the passage of the upper vent board is logical with lower The vent arrangement mode of gas plate is identical with spacing.
5. PECVD double-sided depositions equipment as claimed in claim 1, it is characterised in that the compressed air source unit be provided with ammonia gas tank and Silane gas tank, ammonia gas tank and silane gas tank are connected with upper vent board through conduit；Ammonia gas tank and silane gas tank and lower vent board Connected through conduit.
6. PECVD double-sided depositions equipment as claimed in claim 5, it is characterised in that passage is provided with the first passage and second Passage, the first passage is connected with ammonia gas tank, and the second passage is connected with silane gas tank.
7. PECVD double-sided depositions equipment as claimed in claim 1, it is characterised in that upper vent board and lower vent board are by quartz plate Material is made.
8. PECVD double-sided depositions equipment as claimed in claim 1, it is characterised in that it is upper between vent board and lower vent board away from From being 50-300mm.
CN201710124809.9A 2017-03-03 2017-03-03 A kind of PECVD double-sided depositions equipment Pending CN106835072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710124809.9A CN106835072A (en) 2017-03-03 2017-03-03 A kind of PECVD double-sided depositions equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710124809.9A CN106835072A (en) 2017-03-03 2017-03-03 A kind of PECVD double-sided depositions equipment

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Publication Number Publication Date
CN106835072A true CN106835072A (en) 2017-06-13

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102112658A (en) * 2008-05-20 2011-06-29 阿斯莫国际公司 Apparatus and method for high-throughput atomic layer deposition
CN103108986A (en) * 2010-07-07 2013-05-15 磊威技术有限公司 Method and apparatus for contactlessly advancing substrates
US20160237563A1 (en) * 2015-02-13 2016-08-18 Eastman Kodak Company Atomic-layer deposition apparatus
CN206624913U (en) * 2017-03-03 2017-11-10 广东爱康太阳能科技有限公司 A kind of PECVD double-sided depositions equipment

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102112658A (en) * 2008-05-20 2011-06-29 阿斯莫国际公司 Apparatus and method for high-throughput atomic layer deposition
CN102112659A (en) * 2008-05-20 2011-06-29 阿斯莫国际公司 Apparatus and method for high-throughput atomic layer deposition
CN103108986A (en) * 2010-07-07 2013-05-15 磊威技术有限公司 Method and apparatus for contactlessly advancing substrates
US20160237563A1 (en) * 2015-02-13 2016-08-18 Eastman Kodak Company Atomic-layer deposition apparatus
CN206624913U (en) * 2017-03-03 2017-11-10 广东爱康太阳能科技有限公司 A kind of PECVD double-sided depositions equipment

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Application publication date: 20170613