CN106835069A - Semiconductor diamond film doping post-processing approach and device based on femtosecond laser - Google Patents
Semiconductor diamond film doping post-processing approach and device based on femtosecond laser Download PDFInfo
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- CN106835069A CN106835069A CN201611191190.5A CN201611191190A CN106835069A CN 106835069 A CN106835069 A CN 106835069A CN 201611191190 A CN201611191190 A CN 201611191190A CN 106835069 A CN106835069 A CN 106835069A
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- Prior art keywords
- femtosecond laser
- semiconductor diamond
- diamond film
- doped layer
- reaction chamber
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Abstract
The invention provides a kind of semiconductor diamond film doping post-processing approach and device based on femtosecond laser, the method is comprised the following steps：At the semiconductor diamond epitaxial growth initial stage, semiconductor diamond epitaxial film is prepared by MPCVD；Semiconductor diamond doped layer is prepared by MPCVD；The bond energy of foreign atom species according to doped layer and its saturation chemical bond formed with hydrogen atom, selects the femtosecond laser of respective wavelength, interrupts the saturation chemical bond of foreign atom and hydrogen atom formation in doped layer by the femtosecond laser in reaction chamber.This semiconductor diamond film doping post-processing approach and device based on femtosecond laser that the present invention is provided, by the Femtosecond-Laser Pulse Excitation of specific wavelength in semiconductor diamond film, interrupt the saturation chemical bond between foreign atom and hydrogen atom, activating dopant atoms, so as to improve efficient carrier concentration in doped layer.
Description
Technical field
It is thin the present invention relates to technical field of semiconductor, more particularly to a kind of semiconductor diamond based on femtosecond laser
Film doping post-processing approach and device.
Background technology
Unique physical property that semiconductor diamond has makes it in high temperature high power power electronic devices, microwave
Power device, DUV and Detector for High Energy Particles, deep-UV light-emitting device, single-photon light source, biological and chemical sensor,
It is micro electronmechanical（MEMS）With receive electromechanics（NEMS）The various fields such as device, spintronics have great application potential.In recent years
Come, the technology of preparing development of semiconductor diamond material and device causes more and more researchs and the attention of technical staff.Realize
Effective N-shaped and the doping of p-type electricity are the bases of semiconductor devices.But the doping techniques of current semiconductor diamond material are still
Breakthrough progress so is not obtained, this is also the huge obstacle that diamond device moves towards practical.One topmost reason is to mix
Foreign atom in the diamicton energy level in forbidden band is deeper, not easily ionizable, so as to fail effective activation, therefore effective carrier
Concentration is extremely low.In order to improve the carrier concentration of semiconductor diamond doped layer, the application of device level is realized as early as possible, people are continuous
The various foreign atoms of trial, and different doping process and post-processing technology.
The content of the invention
It is an object of the invention to provide a kind of semiconductor diamond film doping post-processing approach based on femtosecond laser
And device, it is intended to fail effectively to activate the electricity for causing for solving the foreign atom in existing semiconductor diamond doped layer
The too low problem of performance is learned, the application of semiconductor diamond material devices level is realized.
What the present invention was realized in：
The present invention provides a kind of semiconductor diamond film doping post-processing approach based on femtosecond laser, comprises the following steps：
S1, at the semiconductor diamond epitaxial growth initial stage, semiconductor diamond epitaxial film is prepared by MPCVD；
S2, semiconductor diamond doped layer is prepared by MPCVD；
The bond energy of S3, the foreign atom species according to doped layer and its saturation chemical bond formed with hydrogen atom, selects corresponding ripple
Femtosecond laser long, the saturation that foreign atom is formed with hydrogen atom in doped layer is interrupted in reaction chamber by the femtosecond laser
Chemical bond.
Further, it is further comprising the steps of：
S4, during the femtosecond laser interrupts the saturation chemical bond that foreign atom and hydrogen atom are formed, by it is secondary from
Hydrogen ion concentration in sub- Mass Spectrometer Method device detection reaction chamber, real-time monitoring dehydrogenation effect, and then judge that aftertreatment technology is
It is no to reach target.
Further, in the step S3, the wavelength of selected femtosecond laser and the required saturation chemical bond for interrupting
Resonant absorption peak is corresponding.
Further, if semiconductor diamond doped layer is the N-shaped doped layer of doping phosphorus atoms, the femtosecond laser for selecting
Wavelength be 371 ± 20nm.
The present invention also provides a kind of semiconductor diamond film doping after-treatment device based on femtosecond laser, including is used for
The reaction chamber of semiconductor diamond epitaxial growth and some femtosecond laser sources, are provided with cut-parts pallet in the reaction chamber, described
Semiconductor diamond epitaxial substrate is placed with slide tray, optical channel window is provided with the reaction chamber, the femtosecond swashs
Light source is radiated in the semiconductor diamond epitaxial substrate by the optical channel window.
Further, the optical channel window top has a waveguide, and chute is provided with the waveguide, described to fly
Second lasing light emitter is installed on the chute.
Further, also including for detecting that the SIMS of the hydrogen ion concentration in the reaction chamber detects dress
Put.
Further, the SIMS detection means is installed on the exhaust pipe of the reaction chamber.
Further, also including computer automatic control system, for controlling to introduce different wave length in different growth phases
Femtosecond laser source is radiated at semiconductor diamond growing surface.
Compared with prior art, the invention has the advantages that：
This semiconductor diamond film doping post-processing approach and device based on femtosecond laser that the present invention is provided, are partly leading
After body diamond epitaxial growth and doping process terminate, the Femtosecond-Laser Pulse Excitation by specific wavelength is thin in semiconductor diamond
In film, the saturation chemical bond formed with hydrogen atom with foreign atom in semiconductor diamond by femtosecond laser is acted on, and is beaten
Disconnected saturation chemical bond between foreign atom and hydrogen atom, activating dopant atoms, so that it is dense to improve efficient carrier in doped layer
Degree.Additionally, during Femtosecond-Laser Pulse Excitation, the hydrogen ion concentration for escaping is detected by SIMS detection means,
The effect of femtosecond laser activating dopant atoms can in real time be analyzed.
Brief description of the drawings
Fig. 1 is a kind of semiconductor diamond film doping post processing side based on femtosecond laser provided in an embodiment of the present invention
The flow chart of method；
Fig. 2 is a kind of semiconductor diamond film doping after-treatment device based on femtosecond laser provided in an embodiment of the present invention
Structural representation.
Description of reference numerals：101- microwave sources, 102- femtosecond lasers source, 103- chutes, 104- optical channels window, 105- are anti-
Chamber, 106- epitaxial substrates, 107- slide trays, 108- exhaust pipes, 109- SIMSs detection means, 110- is answered to support
Frame, 111- air inlets, 112- waveguides.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is all other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
As shown in figure 1, the embodiment of the present invention is located after providing a kind of semiconductor diamond film doping based on femtosecond laser
Reason method, after the growth of semiconductor diamond doped layer is finished, introduces targetedly many according to default programmed steps
Mould femtosecond laser source auxiliary irradiation in growing surface, by femtosecond laser directly with the saturation hydrogen of semiconductor diamond foreign atom
Key is acted on, and interrupts the saturation hydrogen bond of foreign atom, activating dopant atoms, so as to improve doped layer efficient carrier concentration.
It is comprised the following steps：
S1, at the semiconductor diamond epitaxial growth initial stage, semiconductor diamond epitaxial film is prepared by MPCVD.
S2, semiconductor diamond doped layer is prepared by MPCVD.
The bond energy of S3, the foreign atom species according to doped layer and its saturation chemical bond formed with hydrogen atom, selects phase
The femtosecond laser of wavelength is answered, interrupts what foreign atom and hydrogen atom in doped layer were formed by the femtosecond laser in reaction chamber
Saturation chemical bond.
In the step S3, according to different foreign atoms（Phosphorus, boron, magnesium etc.）Bond energy between hydrogen, the femtosecond swashs
The wavelength of light can accordingly be adjusted, by the wavelength of femtosecond laser wavelength regulation system call interception femtosecond laser, it is preferable that institute
The wavelength of the femtosecond laser of selection is corresponding with the resonant absorption peak of the required saturation chemical bond for interrupting, and makes single or multiple light
Sub- energy is equal or approximately equal with bond energy.If semiconductor diamond doped layer is the N-shaped doped layer of doping phosphorus atoms, select
Femtosecond laser wavelength be 371 ± 20nm.
S4, during the femtosecond laser interrupts the saturation chemical bond that foreign atom and hydrogen atom are formed, by two
Hydrogen ion concentration in secondary ion Mass Spectrometer Method device detection reaction chamber, real-time monitoring dehydrogenation effect, and then judge post processing work
Whether skill reaches target.
The semiconductor diamond doped layer of high carrier concentration and repeatable manufacture can be obtained using the method.
As shown in Fig. 2 after the embodiment of the present invention also provides a kind of semiconductor diamond film doping based on femtosecond laser
Processing unit, the device can be used for realizing the above method, including for semiconductor diamond epitaxial growth reaction chamber 105 with
And some femtosecond laser sources 102, the side wall upper part of the reaction chamber 105 is provided with an air inlet 111, the bottom of the reaction chamber 105
Portion is provided with and slide tray 107 is provided with an exhaust pipe 108, the reaction chamber 105, and the slide tray 107 passes through support frame
110 bottoms for being supported in the reaction chamber 105, are placed with semiconductor diamond epitaxial substrate 106 in the slide tray 107.
The top of the reaction chamber 105 is provided with optical channel window 104, and in other embodiments, the optical channel window 104 can be with
On the side wall of the reaction chamber 105.The top of the optical channel window 104 has a waveguide 112, the waveguide 112
It is connected with a microwave source 101, chute 103 is provided with the waveguide 112, the femtosecond laser source 102 is installed on the cunning
On groove 103, the femtosecond laser source 102 can be one or more, and the femtosecond laser source 102 passes through the optical channel window
104 are radiated in the semiconductor diamond epitaxial substrate 106.In the material doped last handling process of semiconductor diamond, fly
Second laser is radiated on the diamond thin in the epitaxial substrate 106 in slide tray 107, by femtosecond laser source 102 in cunning
Moved on groove 103, quickly scanned, realize the post processing to diamond thin doped layer in whole substrate disk surfaces.
In this preferred embodiment, also including the secondary ion matter for detecting the hydrogen ion concentration in the reaction chamber 105
Spectrum detection device 109, the SIMS detection means 109 is installed on the exhaust pipe 108 of the reaction chamber 105.
It is further preferred that also include computer automatic control system, for controlling in different growth phases according to default
The femtosecond laser source that programmed steps introduce different wave length is radiated at semiconductor diamond growing surface.
In sum, locate after this semiconductor diamond film doping based on femtosecond laser provided in an embodiment of the present invention
Reason method and apparatus, after semiconductor diamond epitaxial growth and doping process terminate, by the femtosecond laser of specific wavelength
In acting on semiconductor diamond film, by foreign atom in femtosecond laser and semiconductor diamond and hydrogen atom formed it is full
Acted on chemical bond, interrupted the saturation chemical bond between foreign atom and hydrogen atom, activating dopant atoms, so as to improve mix
Efficient carrier concentration in diamicton.Additionally, during Femtosecond-Laser Pulse Excitation, by SIMS detection means to the hydrogen that escapes
Ion concentration detected, can in real time analyze the effect of femtosecond laser activating dopant atoms.Femtosecond laser is introduced micro- by the present invention
Ripple plasma activated chemical vapour deposition（MPCVD）In semiconductor diamond doped layer technology of preparing in, for semiconductor gold
The raising of the device performance of hard rock material is significant.
Presently preferred embodiments of the present invention is the foregoing is only, is not intended to limit the invention, it is all in essence of the invention
Within god and principle, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.
Claims (9)
1. a kind of semiconductor diamond film doping post-processing approach based on femtosecond laser, it is characterised in that including following step
Suddenly：
S1, at the semiconductor diamond epitaxial growth initial stage, semiconductor diamond epitaxial film is prepared by MPCVD；
S2, semiconductor diamond doped layer is prepared by MPCVD；
The bond energy of S3, the foreign atom species according to doped layer and its saturation chemical bond formed with hydrogen atom, selects corresponding ripple
Femtosecond laser long, the saturation that foreign atom is formed with hydrogen atom in doped layer is interrupted in reaction chamber by the femtosecond laser
Chemical bond.
2. the semiconductor diamond film doping post-processing approach of femtosecond laser is based on as claimed in claim 1, and its feature exists
In：It is further comprising the steps of：
S4, during the femtosecond laser interrupts the saturation chemical bond that foreign atom and hydrogen atom are formed, by it is secondary from
Hydrogen ion concentration in sub- Mass Spectrometer Method device detection reaction chamber, real-time monitoring dehydrogenation effect, and then judge that aftertreatment technology is
It is no to reach target.
3. the semiconductor diamond film doping post-processing approach of femtosecond laser is based on as claimed in claim 1, and its feature exists
In：In the step S3, the resonant absorption peak phase of the wavelength of selected femtosecond laser and the required saturation chemical bond for interrupting
Correspondence.
4. the semiconductor diamond film doping post-processing approach of femtosecond laser is based on as claimed in claim 3, and its feature exists
In：If semiconductor diamond doped layer is the N-shaped doped layer of phosphorus atoms of adulterating, the wavelength of the femtosecond laser for selecting for 371 ±
20nm。
5. a kind of semiconductor diamond film doping after-treatment device based on femtosecond laser, it is characterised in that：Including for half
The reaction chamber of conductor diamond epitaxial growth and some femtosecond laser sources, are provided with cut-parts pallet, the load in the reaction chamber
Semiconductor diamond epitaxial substrate is placed with tablet tray, optical channel window, the femtosecond laser are provided with the reaction chamber
Source is radiated in the semiconductor diamond epitaxial substrate by the optical channel window.
6. the semiconductor diamond film doping after-treatment device of femtosecond laser is based on as claimed in claim 5, and its feature exists
In：The optical channel window top has a waveguide, and chute is provided with the waveguide, and the femtosecond laser source is installed on
On the chute.
7. the semiconductor diamond film doping after-treatment device of femtosecond laser is based on as claimed in claim 5, and its feature exists
In：Also include the SIMS detection means for detecting the hydrogen ion concentration in the reaction chamber.
8. the semiconductor diamond film doping after-treatment device of femtosecond laser is based on as claimed in claim 7, and its feature exists
In：The SIMS detection means is installed on the exhaust pipe of the reaction chamber.
9. the semiconductor diamond film doping after-treatment device of femtosecond laser is based on as claimed in claim 5, and its feature exists
In：Also include computer automatic control system, the femtosecond laser source for controlling to introduce different wave length in different growth phases is irradiated
In semiconductor diamond growing surface.
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| CN201611191190.5A CN106835069A (en) | 2016-12-21 | 2016-12-21 | Semiconductor diamond film doping post-processing approach and device based on femtosecond laser |
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| CN201611191190.5A CN106835069A (en) | 2016-12-21 | 2016-12-21 | Semiconductor diamond film doping post-processing approach and device based on femtosecond laser |
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| CN108217644A (en) * | 2018-03-05 | 2018-06-29 | 武汉大学 | The method and apparatus of dehydrogenation impurity is removed in a kind of N-shaped phosphorus doping diamond thin preparation process |
| CN108315816A (en) * | 2018-04-19 | 2018-07-24 | 武汉大学 | Single crystal diamond film method and apparatus |
| CN109004070A (en) * | 2018-05-31 | 2018-12-14 | 武汉理工大学 | A kind of multi-colored led array epitaxy technique method and device |
| CN111962156A (en) * | 2020-08-06 | 2020-11-20 | 武汉大学 | Method for repairing single crystal diamond crystal structure based on ultrashort pulse laser |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108217644A (en) * | 2018-03-05 | 2018-06-29 | 武汉大学 | The method and apparatus of dehydrogenation impurity is removed in a kind of N-shaped phosphorus doping diamond thin preparation process |
| CN108217644B (en) * | 2018-03-05 | 2020-02-14 | 武汉大学 | Method and device for removing hydrogen impurities in preparation process of n-type phosphorus-doped diamond film |
| CN108315816A (en) * | 2018-04-19 | 2018-07-24 | 武汉大学 | Single crystal diamond film method and apparatus |
| CN109004070A (en) * | 2018-05-31 | 2018-12-14 | 武汉理工大学 | A kind of multi-colored led array epitaxy technique method and device |
| CN111962156A (en) * | 2020-08-06 | 2020-11-20 | 武汉大学 | Method for repairing single crystal diamond crystal structure based on ultrashort pulse laser |
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