CN106833649A - Embedded photoluminescent material, the preparation method of light conversion film piece, light conversion film piece and display device - Google Patents
Embedded photoluminescent material, the preparation method of light conversion film piece, light conversion film piece and display device Download PDFInfo
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- CN106833649A CN106833649A CN201710081847.0A CN201710081847A CN106833649A CN 106833649 A CN106833649 A CN 106833649A CN 201710081847 A CN201710081847 A CN 201710081847A CN 106833649 A CN106833649 A CN 106833649A
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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Abstract
The invention provides a kind of embedded photoluminescent material, the preparation method of light conversion film piece, light conversion film piece and display device.Wherein, the embedded photoluminescent material includes inert polymer resin and the quanta point material being arranged in inert polymer resin, inert polymer resin is first kind inert plastic or Equations of The Second Kind inert plastic, glass transition temperature >=100 DEG C of first kind inert plastic, glass transition temperature≤20 DEG C of Equations of The Second Kind inert plastic, and at 25 DEG C Equations of The Second Kind inert plastic viscosity >=106cps.Quanta point material can be disperseed using above-mentioned inert polymer resin, due to preparing light conversion film piece using above-mentioned embedded photoluminescent material, photoetching process need not be introduced, be introduced into influence of the materials such as light trigger to the photic effect of quanta point material in light conversion film piece in photoetching process so as to avoid.
Description
Technical field
The present invention relates to optical technical field, in particular to a kind of embedded photoluminescent material, the preparation of light conversion film piece
Method, light conversion film piece and display device.
Background technology
With the development of science and technology, frivolous, fast response time, bright OLED (Organic Light Emitting Diode) displays
Equipment is gradually paid close attention to by people, and traditional LCD (liquid crystal display) is on the hazard, therefore introduces quantum dot one after another
To release quantum dot TV in (quantum dots) extremely backlight module of traditional LCD, so as to the colour gamut of display device be carried
Rise to the level of OLED.The technique of above-mentioned introducing quantum dot is typically that red and green quantum dot blending is filling in glass tube
In, or make film added in backlight module, under the exciting of Blue backlight, quantum dot send excitation feux rouges high and
Green glow, so as to realize full-color display.
Either LCD or OLED show that light emission side is required for addition colored filter (color filter), for essence
Accurate presentation color.Because the half-peak breadth of quantum dot is extremely narrow, so by after colored filter, the colour gamut of quantum dot TV is almost
It is unaffected, and the colour gamut that half-peak breadth OLED wider shows is greatly lowered.
However, quantum dot TV or OLED are after colored filter is introduced, more luminous energy, prior art are all have lost
In also take photoresist and monochromatic quantum dot to be blended to prepare the colored filter containing quantum dot, namely light conversion film piece, photoetching
Glue typically realizes curing reaction using the ultraviolet light of 365nm wavelength, and quantum dot have under the ultra violet lamp of this wavelength compared with
Big absorption, cause solidification rate slack-off, and this is accomplished by improving the energy of uviol lamp or increases the amount of initiator ensuring light
Photoresist is smoothly reacted, and residual of light trigger etc. all can greatly reduce the luminous efficiency of quantum dot.
Also, the preparation technology of current quantum dot diaphragm is mainly photoetching, i.e., developed by uv-exposure obtain pixel every
From structure BM (black matrix), spin coating is mixed with photoresist, exposure, the development of quantum dot successively again afterwards, so repeatedly
Obtain RGB quantum dot diaphragms for three times.Obviously, the photoresist that part is mixed with quantum dot is etched away in the above method, material profit
It is relatively low with rate, cause to waste lot of materials, and the lithographic equipment of precision involves great expense, these all considerably increase display panel
Cost；On the other hand, photic effect of the material (light trigger in photoresist etc.) in lithographic process to quantum dot diaphragm
There is also influence.
The content of the invention
It is a primary object of the present invention to provide a kind of embedded photoluminescent material, the preparation method of light conversion film piece, light conversion
Diaphragm and display device, it is poor with the photic effect for solving the problems, such as light conversion film piece in the prior art.
To achieve these goals, according to an aspect of the invention, there is provided a kind of embedded photoluminescent material, including inertia
Macromolecule resin and the quanta point material being arranged in inert polymer resin, inert polymer resin are first kind inert plastic
Or Equations of The Second Kind inert plastic, glass transition temperature >=100 DEG C of first kind inert plastic, the vitrifying of Equations of The Second Kind inert plastic
Transition temperature≤- 20 DEG C, and at 25 DEG C Equations of The Second Kind inert plastic viscosity >=106cps。
Further, the number-average molecular weight of first kind inert plastic is 5 × 104Or more, preferred first kind inert plastic
Selected from polymethyl methacrylate, styrene methyl methacrylate copolymer, makrolon, poly- allyl diethylene glycol (DEG)
Any one or more in ester, styrene acrylonitrile copolymer and styrene-butadiene-propylene ester copolymer.
Further, the number-average molecular weight of Equations of The Second Kind inert plastic is 5 × 104Or more, preferred Equations of The Second Kind inert plastic
It is polyisobutene.
Further, the surface of quanta point material has part, and part one end carries double bond, and double bond is used for and is formed inertia
There is polymerisation and form copolymer in the monomer of macromolecule resin, the other end of preferably part is connected with quanta point material, another
It is carboxyl, sulfydryl or amino to hold, and preferred monomers are monofunctional monomer, more preferably vinyl monomer.
Further, quanta point material and the mass ratio of inert polymer resin are 1:19~19:1.
Further, embedded photoluminescent material also includes at least one in solvent, auxiliary agent and scattering particles.
Further, embedded photoluminescent material includes solvent, auxiliary agent and scattering particles, inert polymer resin and quantum dot material
The weight of material accounts for the 0.5~95% of the gross weight of embedded photoluminescent material, and the weight of solvent accounts for the 2 of the gross weight of embedded photoluminescent material
~80%, the weight of auxiliary agent accounts for the 0.5~15% of the gross weight of embedded photoluminescent material, and the weight of scattering particles accounts for luminescence generated by light material
The 0.5~20% of the gross weight of material.
According to another aspect of the present invention, there is provided a kind of preparation method of light conversion film piece, preparation method includes being formed
The step of the step of quantum dot layer, formation quantum dot layer, includes procedure below：Above-mentioned embedded photoluminescent material is arranged at carrier
On；Treatment is dried to embedded photoluminescent material, quantum dot layer is formed.
Further, dried process is hot plate baking, infrared baking or vacuum drying.
Further, before the step that embedded photoluminescent material is arranged on carrier, formed quantum dot layer the step of also
Including procedure below：Black matrix" is set on the surface of carrier, to form pixel isolation structure.
Further, the preparation method is further comprising the steps of：The top away from carrier or carrier in quantum dot layer
Away from quantum dot layer lower section set sealant.
According to another aspect of the present invention, additionally provide a kind of light conversion film piece, including substrate layer and be arranged at base material
The pixel isolation structure of the first surface of layer, forms multiple mutually isolated subpixel areas between pixel isolation structure, light turns
Changing diaphragm also includes：Quantum dot layer, is arranged on the corresponding substrate layer of at least part of subpixel area, and quantum dot layer is above-mentioned
Preparation method be prepared from.
Further, light conversion film piece also includes：Sealant, is arranged at the side surface away from substrate layer of quantum dot layer
On.
Further, it is UV resins or organic-inorganic stacking hybridized film to form the material of sealant.
In accordance with a further aspect of the present invention, there is provided a kind of display device, including backlight and light conversion film piece, light conversion
Diaphragm is above-mentioned light conversion film piece.
Apply the technical scheme of the present invention, there is provided a kind of embedded photoluminescent material, because the embedded photoluminescent material includes tool
The inert polymer resin for having particular glass transition temperature and the quanta point material being arranged in above-mentioned inert polymer resin,
Quanta point material can be disperseed using above-mentioned inert polymer resin, due to preparing light conversion using above-mentioned embedded photoluminescent material
Diaphragm, it is not necessary to introduce photoetching process, be introduced into the materials such as light trigger in light conversion film piece in photoetching process so as to avoid
The influence of the photic effect of quanta point material.
In addition to objects, features and advantages described above, the present invention also has other objects, features and advantages.
Below with reference to figure, the present invention is further detailed explanation.
Brief description of the drawings
The Figure of description for constituting a part of the invention is used for providing a further understanding of the present invention, of the invention to show
Meaning property and its illustrates, for explaining the present invention, not constitute inappropriate limitation of the present invention embodiment.In the accompanying drawings：
Fig. 1 shows a kind of structural representation of light conversion film piece provided by the present invention.
Wherein, above-mentioned accompanying drawing is marked including the following drawings：
10th, substrate layer；20th, pixel isolation structure；30th, quantum dot layer；40th, sealant.
Specific embodiment
It should be noted that in the case where not conflicting, the embodiment in the present invention and the feature in embodiment can phases
Mutually combination.Describe the present invention in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
In order that those skilled in the art more fully understand the present invention program, below in conjunction with the embodiment of the present invention
Accompanying drawing, is clearly and completely described to the technical scheme in the embodiment of the present invention, it is clear that described embodiment is only
The embodiment of a part of the invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill people
The every other embodiment that member is obtained under the premise of creative work is not made, should all belong to the model of present invention protection
Enclose.
It should be noted that term " first ", " in description and claims of this specification and above-mentioned accompanying drawing
Two " it is etc. for distinguishing similar object, without for describing specific order or precedence.It should be appreciated that so using
Data can exchange in the appropriate case, so as to embodiments of the invention described herein.Additionally, term " including " and " tool
Have " and their any deformation, it is intended that covering is non-exclusive to be included, for example, containing series of steps or unit
Process, method, system, product or equipment are not necessarily limited to those steps clearly listed or unit, but may include without clear
It is listing to Chu or for these processes, method, product or other intrinsic steps of equipment or unit.
As described in background technology, the material at present in the processing procedure of the light conversion film piece containing quantum dot is (light-initiated
Agent etc.) there is influence to the photic effect of light conversion film piece, present inventor is studied regarding to the issue above, it is proposed that
A kind of embedded photoluminescent material, including inert polymer resin and the quanta point material being arranged in above-mentioned inert polymer resin,
Above-mentioned inert polymer resin includes first kind inert plastic or Equations of The Second Kind inert plastic, the glass of above-mentioned first kind inert plastic
Change transition temperature >=100 DEG C, glass transition temperature≤- 20 DEG C of above-mentioned Equations of The Second Kind inert plastic, and above-mentioned second at 25 DEG C
Viscosity >=10 of class inert plastic6cps。
The glass transition of above-described embodiment generally refers to the transformation between glassy state and elastomeric state, the transformation corresponding to it
Temperature is glass transition temperature, or glass transition temperature.In the above-described embodiments, inert polymer resin is water white transparency
The resin of printing opacity high, wherein, glass transition temperature >=100 DEG C of first kind inert plastic, therefore the resin is at normal temperatures
Immobilising glassy state, in the light conversion film piece made of the first kind inert plastic, the first kind inert plastic also will not
Because the change of the temperature and position in conventional use, and change original shape；And Equations of The Second Kind inert plastic turns because of its vitrifying
Temperature≤- 20 DEG C, and at 25 DEG C above-mentioned Equations of The Second Kind inert plastic viscosity >=106Cps, is equally difficult stream at normal temperatures
Dynamic deformation.Above-mentioned inert polymer resin can be the resin of water white transparency and printing opacity high, preferably its light transmittance 90% with
On.
Above-mentioned embedded photoluminescent material of the invention is due to including the inert polymer tree with particular glass transition temperature
Fat and the quanta point material being arranged in above-mentioned inert polymer resin, using above-mentioned inert polymer resin embedded photoluminescent material
Quanta point material can be disperseed, due to preparing light conversion film piece using above-mentioned embedded photoluminescent material, it is not necessary to introduce photoetching work
Skill, be introduced into photic effect of the materials such as light trigger to the quanta point material in light conversion film piece in photoetching process so as to avoid
Influence.By selecting the above-mentioned inert polymer resin with particular glass transition temperature, inert polymer tree is realized
Fixation of the fat to quanta point material.
When above-mentioned inert polymer resin is first kind inert plastic, it is preferable that the number of inert polymer resin is divided equally
Son amount is 5 × 104Or more.The inert polymer resin for meeting above-mentioned glass transition temperature and molecular weight can be selected from poly- first
Base methyl acrylate, styrene methyl methacrylate copolymer, makrolon, poly- allyl diethylene glycol (DEG) ester, styrene
Any one or more in acrylonitrile copolymer and styrene-butadiene-propylene ester copolymer；When above-mentioned inert polymer resin
During for Equations of The Second Kind inert plastic, it is preferable that the number-average molecular weight of above-mentioned inert polymer resin is 5 × 104Or more；In satisfaction
The inert polymer resin for stating glass transition temperature, viscosity and molecular weight can be polyisobutene.
In order to further improve peptizaiton of the inert polymer resin to quanta point material, in a kind of preferred embodiment party
In formula, the surface of above-mentioned quanta point material has part, and one end of the part carries double bond, and above-mentioned double bond is used for and forms above-mentioned
There is polymerisation and form copolymer in the monomer of inert polymer resin, above-mentioned part can be oleic acid, the other end of part
It is connected with quanta point material, the ligand residue for carrying double bond is located at quanta point material outside, the preferably other end and quantum of part
The functional group that point material surface is combined can be selected from being carboxyl, sulfydryl or amino, and preferred monomers are monofunctional monomer, more preferably
Vinyl monomer；Also, in order to further improve dispersion effect, it is preferable that the matter of quanta point material and inert polymer resin
Amount is than being 1:19~19:1.
In above-mentioned embedded photoluminescent material of the invention, embedded photoluminescent material is also included in solvent, auxiliary agent and scattering particles
At least one, auxiliary agent be selected from dispersant, defoamer and surface active agent in any one or more.Above-mentioned solvent is used to make light
Electroluminescent material can preferably disperse, coat on carrier, it is preferable that above-mentioned solvent is selected from alkane solvents, arene
Any one or more in solvent, the esters solvent of backbone c atoms number >=4, ketones solvent and ether solvent；Above-mentioned dispersant
For the quanta point material in further dispersing inert macromolecule resin, it is preferable that above-mentioned dispersant be macromolecule dispersing agent and/
Or nonionic surface active agent, above-mentioned defoamer is used to reduce surface tension, suppresses the generation of foam in embedded photoluminescent material
Or the foam of generation is eliminated as early as possible, above-mentioned surface active agent is used to make inert polymer resin and quanta point material mixture more
It is easy to sprawl on a solid surface, makes its film forming uniform；Above-mentioned scattering particles is used to improve the luminous efficiency of embedded photoluminescent material,
Preferably, above-mentioned scattering particles is titanium dioxide, and the structure of titanium dioxide is more preferably rutile structure, it is further preferable that on
The particle diameter for stating scattering particles is 150~500nm.
It is above-mentioned preferred embodiment in, embedded photoluminescent material include above-mentioned solvent, above-mentioned auxiliary agent and above-mentioned scattering grain
Son, now, in order to improve dispersion effect of the inert polymer resin to quanta point material, it is preferable that inert polymer resin and
The weight of quanta point material accounts for the 0.5~95% of the gross weight of embedded photoluminescent material, and the weight of solvent accounts for embedded photoluminescent material
The 2~80% of gross weight, the weight of auxiliary agent accounts for the 0.5~15% of the gross weight of embedded photoluminescent material, and the weight of scattering particles is accounted for
The 0.5~20% of the gross weight of embedded photoluminescent material.
In above-mentioned embedded photoluminescent material of the invention, in order that the quantum dot layer being prepared from using embedded photoluminescent material
Function with full-color display, it is preferable that quanta point material is selected from red oil-soluble quantum dot, green oil-soluble quantum dot and indigo plant
Any one in color oil-soluble quantum dot.
According to another aspect of the present invention, there is provided a kind of preparation method of light conversion film piece, the preparation method includes shape
The step of the step of into quantum dot layer, above-mentioned formation quantum dot layer, includes procedure below：Above-mentioned embedded photoluminescent material is set
In on carrier；Treatment is dried to above-mentioned embedded photoluminescent material, above-mentioned quantum dot layer is formed.Preferably, by luminescence generated by light
Before material is arranged at the step on carrier, formed quantum dot layer the step of also include procedure below：Set on the surface of carrier
Black matrix" is used as pixel isolation structure.
Due to forming quantum dot layer, and quantum dot layer bag using embedded photoluminescent material in above-mentioned preparation method of the invention
The inert polymer resin with particular glass transition temperature and the quanta point material being arranged in inert polymer resin are included,
Enable the quantum dot layer being prepared from that there is scattered quanta point material, due to preparing quantum using above-mentioned embedded photoluminescent material
Point layer, it is not necessary to introduce photoetching process, introduce in photoetching process the materials such as light trigger to light conversion film piece so as to avoid
The influence of photic effect.
Also, above-mentioned embedded photoluminescent material includes inert polymer resin and the quantum being arranged in inert polymer resin
Point material, glass transition temperature >=100 DEG C of above-mentioned inert polymer resin, or above-mentioned inert polymer resin are vitrifying
Transition temperature≤- 20 DEG C, and viscosity >=10 at 25 DEG C6The resin of cps, so as to have particular glass transition temperature by selection
Inert polymer resin, realize the dispersion effect of quanta point material in embedded photoluminescent material.
In a preferred embodiment, can mix with above-mentioned quanta point material by by inert polymer resin,
To form above-mentioned embedded photoluminescent material.Wherein, inert polymer resin be first kind inert plastic or Equations of The Second Kind inert plastic, it is excellent
Selection of land, the number-average molecular weight of the first inert plastic is 5 × 104Or more, more preferably 1 × 105Or more；Meet above-mentioned glass
The inert polymer resin for changing transition temperature and molecular weight can be selected from polymethyl methacrylate, styrene methacrylic acid first
Ester copolymer, makrolon, poly- allyl diethylene glycol (DEG) ester, styrene acrylonitrile copolymer and styrene-butadiene-propylene
Any one or more in ester copolymer；Preferably, the number-average molecular weight of above-mentioned second inert plastic is 5 × 104Or more, more
Preferably 1 × 105Or more；Meeting the inert polymer resin of above-mentioned glass transition temperature, viscosity and molecular weight can be
Polyisobutene.
In order to optimize the dispersion effect of quanta point material in embedded photoluminescent material, in another preferred embodiment,
Quanta point material surface has the part for carrying double bond, and the ligand residue for carrying double bond is located at quanta point material outside, and double bond is used
There is polymerisation and form copolymer in the monomer that inert polymer resin is formed in embedded photoluminescent material, and part is another
One end is connected with quanta point material, and inert polymer resin constitutes quantum dot resin copolymer with quanta point material, now, prepares
Method also includes being formed the process of quantum dot resin copolymer, and said process includes：Part is made using radical polymerization initiator
With monomer copolymerization, to form copolymer solution, preferably radical polymerization initiator is selected from azodiisobutyronitrile and/or peroxidating two
Benzoyl；Purification process is carried out to copolymer solution, to form pure quantum dot resin copolymer.In above-mentioned purification process removal
Radical polymerization initiator residual, the quanta point material of monomer and unreacted containing double bond part are stated, so as to avoid radical polymerization
Close the influence to the photic effect of light conversion film piece such as initiator.
In order to be beneficial to the dispersion effect for being coated with and improving quanta point material in embedded photoluminescent material, above-mentioned embedded photoluminescent material
At least one in solvent, auxiliary agent and scattering particles can also be included, auxiliary agent is selected from dispersant, defoamer and surface active agent
Any one or more.Preferably, above-mentioned solvent is selected from alkane solvents, aromatic hydrocarbon solvent, the ester of backbone c atoms number >=4
Any one or more in class solvent, ketones solvent and ether solvent；Preferably, above-mentioned dispersant be macromolecule dispersing agent and/
Or nonionic surface active agent；Preferably, above-mentioned scattering particles is titanium dioxide, and the structure of titanium dioxide is more preferably golden red
Stone structure, it is further preferable that the particle diameter of above-mentioned scattering particles is 150~500nm.Now, can be adjusted according to the addition of solvent
The viscosity of system, and choose the techniques such as inkjet printing or silk-screen printing above-mentioned embedded photoluminescent material is coated, Ran Houtong
Cross dried process and remove above-mentioned solvent and auxiliary agent, so that the quantum dot layer of forming properties stabilization.
In order to improve the uniformity and stability of the quantum dot layer of formation, it is preferable that done to embedded photoluminescent material
In the step of dry treatment, dried process is hot plate baking, infrared baking or vacuum drying.Above-mentioned dried process is only used for
Except volatizable materials such as solvents, those skilled in the art can be according to prior art to the work of above-mentioned different types of dried process
Skill condition carries out Rational choice.It is further preferable that first slow rear fast mode is taken in drying, i.e., in lower temperature or compared with low vacuum
It is slow when spending to change drying condition or stay longer, it is rapidly heated when dissolvent residual is less or improves vacuum, with
Uniform quantum dot layer is formed after the drying.
After the step of forming above-mentioned quantum dot layer, in order to improve the reliability of light conversion film piece, it is preferable that above-mentioned light
The preparation method for changing diaphragm is further comprising the steps of：Quantum dot layer away from carrier top or carrier away from quantum
The lower section of point layer sets sealant, or, it is also possible to it is arranged on quantum dot layer between substrate.Above-mentioned sealant is used for quantum
Point layer sealing, to prevent quantum dot layer from decline its photic effect by the invasion and attack of water oxygen, it is ensured that light conversion film piece
Photic effect；It is further preferable that the material for forming above-mentioned sealant is UV resins or organic-inorganic stacking hybridized film.
According to another aspect of the present invention, additionally provide a kind of light conversion film piece, as shown in figure 1, including substrate layer 10 with
And the pixel isolation structure 20 of the first surface of substrate layer 10 is arranged at, form multiple mutually isolated between pixel isolation structure 20
Subpixel area, light conversion film piece also includes：Quantum dot layer 30, is arranged at the corresponding substrate layer of at least part of subpixel area
On 10, and quantum dot layer 30 is prepared from for above-mentioned preparation method.
Because quantum dot layer is prepared from using embedded photoluminescent material in above-mentioned light conversion film piece of the invention, and amount
Son point layer includes the quantum in inert polymer resin and being arranged at property macromolecule resin with particular glass transition temperature
Point material, enables quantum dot layer to have scattered quanta point material, due to preparing quantum dot using above-mentioned embedded photoluminescent material
Layer, it is not necessary to introduce photoetching process, introduce in photoetching process light of the materials such as light trigger to light conversion film piece so as to avoid
Cause the influence of effect.
In above-mentioned light conversion film piece of the invention, it is preferable that the light conversion film piece also includes：Sealant 40, is set
In on the side surface away from substrate layer 10 of quantum dot layer 30.Above-mentioned sealant 40 is used to seal quantum dot layer 30, in case
Only quantum dot layer 30 declines its photic effect by the invasion and attack of water oxygen, it is ensured that the photic effect of light conversion film piece.More
It is UV resins or organic-inorganic stacking hybridized film preferably, to form the material of above-mentioned sealant 40.Can using above-mentioned material
Make sealant 40 that there is preferably sealing effectiveness.
In order to obtain RGB quantum dot diaphragms, it is preferable that quanta point material in above-mentioned each subpixel area independently selected from
Any one in red oil-soluble quantum dot, green oil-soluble quantum dot and blue oil-soluble quantum dot.Those skilled in the art
Luminescent species that can be according to the actual requirements to quanta point material in the quantity and subpixel area of subpixel area are closed
Reason is chosen.
Also, in accordance with a further aspect of the present invention, additionally provide a kind of display device, including backlight and light conversion film
Piece, light conversion film piece is above-mentioned light conversion film piece.Because quantum dot layer is to use light in above-mentioned display device of the invention
Electroluminescent material is prepared from, and quantum dot layer includes the quantum dot in inert polymer resin and being arranged at property macromolecule resin
Material, enables quantum dot layer to have scattered quanta point material, due to preparing quantum dot layer using above-mentioned embedded photoluminescent material,
Photoetching process need not be introduced, introduce in photoetching process photic effect of the materials such as light trigger to light conversion film piece so as to avoid
The influence of fruit, further increases the service life of display device.
Embedded photoluminescent material, the light conversion film piece of the application offer are be provided below in conjunction with embodiment and comparative example
Preparation method and light conversion film piece.
Mixed by the way that the raw material of inert polymer resin, quanta point material and solvent will be included in embodiment 1-8, to be formed
Embedded photoluminescent material, wherein, the performance parameter of each raw material see the table below 1：
Table 1
Embodiment 9
The preparation method of the embedded photoluminescent material that the present embodiment is provided is comprised the following steps：
In the toluene solution of quantum dot, styrene monomer and radical initiator azodiisobutyronitrile AIBN are added,
24h is reacted under 60 DEG C of heating water bath environment, washing three times is dissolved with ethanol, toluene repeated precipitation, obtain quantum dot polystyrene
Copolymer, wherein, quantum dot is green quantum dot CdSe/ZnS, and the part on surface is oleic acid；
The copolymer is dissolved in q. s. toluene, the solution that solid content is 45% is configured to.
Embodiment 10
The present embodiment provide preparation method be with the difference of embodiment 9：
Dispersant solsperse24000, wetting agent BYK 306, defoamer are additionally added in the toluene solution of quantum dot
BYK025, make dispersant, wetting agent and defoamer in the solution of embedded photoluminescent material it is solid containing respectively 5%, 0.25%,
0.5%.
Embodiment 11
The present embodiment provide preparation method be with the difference of embodiment 10：
It is the scattering particles TiO of 350nm to add particle diameter2, make the solid content of scattering particles in the solution of embedded photoluminescent material
It is 10%.
Embodiment 12
The preparation method of the light conversion film piece that the present embodiment is provided is comprised the following steps：
The substrate layer with pixel isolation structure is provided, pixel isolation structure has 96 × 64 mutually isolated sub-pixels
Region；
The embedded photoluminescent material in embodiment 1 to 11 is arranged in subpixel area and done using InkJet printing processes
It is dry, to form quantum dot layer, wherein, quantum dot ink includes red quantum dot, green quantum dot and solvent, and red quantum dot is
CdSe/ZnS, green quantum dot is that the quanta point material species in CdSe/CdS, and each subpixel area is different；
Glue is arranged on the exposed surface of quantum dot layer and pixel isolation structure using spin coating proceeding, and by adhesive curing with
Sealant is formed, wherein, glue is optic-solidified adhesive (model loctite352).
Multiple light conversion film pieces in above-described embodiment 12 are respectively arranged at going out for blue electroluminescent devices (BLED)
Light side, electroluminescent device includes the blue led lamp bead and light diffusing sheet of order stacking epoxy encapsulation, using PR670 light
The spectrometer light conversion diaphragm lower to Blue backlight irradiation carries out spectrum test, and peak area is integrated, converse it is red with
The respective photoluminescence efficiency of green quantum dot, test result is following (being shown in Table 2)：
Table 2
As can be seen from the above description, the above embodiments of the present invention realize following technique effect：
The embedded photoluminescent material provided in the embodiment of the present application 1 to 11 is respectively provided with photic efficiency higher, with traditional face
Material type light conversion diaphragm is compared, and has obvious advantage to the utilization rate of backlight；Also, each light conversion film piece in the present embodiment
Preparation method abandoned traditional photoetching process, so as to the influence to the photic effect of quantum dot such as avoid light trigger from remaining.
1st, can make the quantum dot layer being prepared from there is scattered quanta point material using above-mentioned embedded photoluminescent material, enter
And enable quantum dot layer that there is photic efficiency higher；
2nd, quantum dot layer is prepared using above-mentioned embedded photoluminescent material, it is not necessary to introduce photoetching process, so as to avoid photoetching
The influences of the material to the photic effect of quantum dot layer such as light trigger are introduced in technique.
The preferred embodiments of the present invention are the foregoing is only, is not intended to limit the invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.It is all within the spirit and principles in the present invention, made any repair
Change, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (15)
1. a kind of embedded photoluminescent material, it is characterised in that including inert polymer resin and be arranged at the inert polymer tree
Quanta point material in fat, the inert polymer resin is first kind inert plastic or Equations of The Second Kind inert plastic, described first
Glass transition temperature >=100 DEG C of class inert plastic, glass transition temperature≤- 20 DEG C of the Equations of The Second Kind inert plastic,
And at 25 DEG C the Equations of The Second Kind inert plastic viscosity >=106cps。
2. embedded photoluminescent material according to claim 1, it is characterised in that
The number-average molecular weight of the first kind inert plastic is 5 × 104Or more, preferably described first kind inert plastic is selected from poly-
Methyl methacrylate, styrene methyl methacrylate copolymer, makrolon, poly- allyl diethylene glycol (DEG) ester, benzene second
Any one or more in alkene acrylonitrile copolymer and styrene-butadiene-propylene ester copolymer.
3. embedded photoluminescent material according to claim 1, it is characterised in that
The number-average molecular weight of the Equations of The Second Kind inert plastic is 5 × 104Or more, preferably described Equations of The Second Kind inert plastic is poly- different
Butylene.
4. embedded photoluminescent material according to any one of claim 1 to 3, it is characterised in that the quanta point material
Surface has part, and described part one end carries double bond, and the double bond is used for and is formed the monomer of the inert polymer resin
Generation polymerisation forms copolymer；It is preferred that the other end of the part is connected with the quanta point material, the other end is
Carboxyl, sulfydryl or amino；It is preferred that the monomer is monofunctional monomer, more preferably vinyl monomer.
5. embedded photoluminescent material according to any one of claim 1 to 3, it is characterised in that the quanta point material with
The mass ratio of the inert polymer resin is 1:19~19:1.
6. embedded photoluminescent material according to any one of claim 1 to 3, it is characterised in that the embedded photoluminescent material
Also include at least one in solvent, auxiliary agent and scattering particles.
7. embedded photoluminescent material according to claim 6, it is characterised in that the embedded photoluminescent material includes described molten
The weight of agent, the auxiliary agent and the scattering particles, the inert polymer resin and the quanta point material and account for the light
The 0.5~95% of the gross weight of electroluminescent material, the weight of the solvent account for the gross weight of the embedded photoluminescent material 2~
80%, the weight of the auxiliary agent accounts for the 0.5~15% of the gross weight of the embedded photoluminescent material, and the weight of the scattering particles is accounted for
The 0.5~20% of the gross weight of the embedded photoluminescent material.
8. a kind of preparation method of light conversion film piece, it is characterised in that the preparation method includes the step of forming quantum dot layer,
The step of formation quantum dot layer, includes procedure below：
Embedded photoluminescent material any one of claim 1 to 7 is arranged on carrier；
Treatment is dried to the embedded photoluminescent material, the quantum dot layer is formed.
9. preparation method according to claim 8, it is characterised in that the dried process is hot plate baking, infrared baking
Or vacuum drying.
10. preparation method according to claim 8, it is characterised in that described the embedded photoluminescent material is arranged at
Before step on carrier, it is described formation quantum dot layer the step of also include procedure below：Set black on the surface of the carrier
Colour moment battle array, to form pixel isolation structure.
11. preparation methods according to claim 8, it is characterised in that the preparation method is further comprising the steps of：Institute
That states quantum dot layer sets sealant away from the top of the carrier or the lower section away from the quantum dot layer of the carrier.
A kind of 12. light conversion film pieces, including substrate layer (10) and be arranged at the substrate layer (10) first surface pixel
Isolation structure (20), forms multiple mutually isolated subpixel areas between the pixel isolation structure (20), it is characterised in that
The light conversion film piece also includes：
Quantum dot layer (30), is arranged on the corresponding substrate layer (10) of at least partly described subpixel area, and the amount
Preparation method of son point layer (30) any one of claim 8 to 11 is prepared from.
13. light conversion film pieces according to claim 12, it is characterised in that the light conversion film piece also includes：
Sealant (40), is arranged on the side surface away from the substrate layer (10) of the quantum dot layer (30).
14. light conversion film pieces according to claim 13, it is characterised in that the material for forming the sealant (40) is UV
Resin or organic-inorganic stacking hybridized film.
A kind of 15. display devices, including backlight and light conversion film piece, it is characterised in that the light conversion film piece will for right
Seek the light conversion film piece any one of 12 to 14.
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| CN107861181A (en) * | 2017-12-04 | 2018-03-30 | 福州大学 | A kind of quantum dot color filter and preparation method thereof |
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| CN110246990A (en) * | 2019-06-27 | 2019-09-17 | 广东普加福光电科技有限公司 | A method of improving inkjet printing quantum dot layer to blue light absorption |
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| CN111584722B (en) * | 2020-05-11 | 2021-11-02 | 深圳市华星光电半导体显示技术有限公司 | Display panel and method for manufacturing the same |
| US11522148B2 (en) | 2020-05-11 | 2022-12-06 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Display panel having quantum dot light scattering particle composite and manufacturing method thereof |
| WO2021233104A1 (en) * | 2020-05-22 | 2021-11-25 | 北京芯海视界三维科技有限公司 | Light-emitting module, display module, display screen and display |
| CN111909295A (en) * | 2020-07-01 | 2020-11-10 | 北京大学深圳研究生院 | Preparation method and application of photosensitization material |
| CN111909295B (en) * | 2020-07-01 | 2022-07-26 | 北京大学深圳研究生院 | Preparation method and application of photosensitization material |
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Application publication date: 20170613 |