CN106827255B - A kind of silicon carbide side's mirror biscuit Pocket Machining method - Google Patents
A kind of silicon carbide side's mirror biscuit Pocket Machining method Download PDFInfo
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- CN106827255B CN106827255B CN201710036699.0A CN201710036699A CN106827255B CN 106827255 B CN106827255 B CN 106827255B CN 201710036699 A CN201710036699 A CN 201710036699A CN 106827255 B CN106827255 B CN 106827255B
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- Prior art keywords
- silicon carbide
- mirror
- biscuit
- paraffin
- carbide side
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/18—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by milling, e.g. channelling by means of milling tools
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L91/00—Compositions of oils, fats or waxes; Compositions of derivatives thereof
- C08L91/06—Waxes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/014—Additives containing two or more different additives of the same subgroup in C08K
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
- C08L2205/025—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2205/00—Polymer mixtures characterised by other features
- C08L2205/03—Polymer mixtures characterised by other features containing three or more polymers in a blend
- C08L2205/035—Polymer mixtures characterised by other features containing three or more polymers in a blend containing four or more polymers in a blend
Abstract
The present invention relates to a kind of silicon carbide side's mirror biscuit Pocket Machining methods, are processed using numerical control machining center, and groove diameter is greater than Φ 378mm, depth is greater than 5mm, bottom thickness is less than or equal to 6mm, and the hollow distance in distance from bottom loss of weight chamber upper surface is greater than 60mm, it is desirable that machining accuracy ± 0.2mm.Include: the first step, fills loss of weight chamber hollow space using paraffin；Second step selects the polycrystalline diamond milling cutter of Φ 10- Φ 12mm, and using spiral way feed, with the 600-1200mm/min amount of feeding, the bite of 0.05-0.1mm is processed, and successively removes groove blank；Third step is removed paraffin by 100-120 DEG C of baking.The present invention can improve the yield rate in square mirror biscuit process to 95% or more, reduce the processing capacity of silicon carbide Fang Jing after sintering, production efficiency can be improved 3-5 times.
Description
Technical field
The present invention relates to silicon carbide side's mirror technical field more particularly to a kind of silicon carbide side's mirror biscuit Pocket Machining methods.
Background technique
Silicon carbide Fang Jing is mainly used for integrated circuit silicon chip photo-etching machine work-piece platform.Photoetching process piece work stage will complete stepping
The movement such as movement, scanning motion, alignment motion, leveling and focusing movement, fluctuating plate, to guarantee that it is highly sensitive that each movement has required
It spends and in high precision, mutually indepedent non-interfering more reference signals is installed on Fang Jing, pass through double-frequency interference instrument and realize closed loop
Control and on-line measurement.Therefore Fang Jing is one structure is complicated, the high-precision optical part more than constraint condition.
Silicon carbide have lesser thermal expansion coefficient, higher thermal coefficient, heat shock resistance and elasticity modulus and often by with
Make optical device；But since the Mohs' hardness of silicon carbide reaches 9.2-9.5 grades, it is only second to diamond, so sintered carbonization
Silicon Fang Jing is difficult to process, and is not suitable for the processing of big removal amount, thus many features of silicon carbide Fang Jing be both needed to it is complete under biscuit state
At processing.Groove structure is a typical difficult machining feature in silicon carbide Fang Jing, and groove structure diameter is big, bottom is thin, and
It is hollow Lightened structure below bottom, silicon carbide side's mirror biscuit bending strength is low (≤25MPa), and when Tool in Cutting biscuit can produce
Raw vibration, is damaged, therefore groove structure is generally reprocessed after the completion of sintering, is directly affected when being easy to cause Pocket Machining
Production efficiency.
Summary of the invention
In view of above-mentioned analysis, the present invention is intended to provide a kind of silicon carbide side's mirror biscuit Pocket Machining method, to solve
Existing processing method the problem of processing efficiency is low, and process is easy to produce damage.
The purpose of the present invention is mainly achieved through the following technical solutions:
A kind of silicon carbide side's mirror biscuit Pocket Machining method, which includes following step
It is rapid:
Step 1, paraffin is filled into silicon carbide side's mirror biscuit loss of weight chamber hollow space；
Step 2, the processing that groove is carried out using numerical control machining center；
Step 3 toasts silicon carbide side's mirror biscuit after processing, until paraffin is totally removed.
In step 1, filling is configured with paraffin by compound paraffin and rosin 10:1-5:1 in mass ratio, and packing volume is big
In the half of loss of weight cavity volume.
The raw material of compound paraffin is every 1kg fully refined paraffin wax addition: palmitinic acid 10g-20g, stearic acid 60g-80g, arachidic acid
10g-20g, polypropylene 2g-5g, polyethylene 8g-15g, beeswax 30g-60g；
Fully refined paraffin wax is 58# fully refined paraffin wax, 60# fully refined paraffin wax by the mixing of any mass ratio.
The raw material of compound paraffin is every 1kg fully refined paraffin wax addition: palmitinic acid 16.6g, stearic acid 62.5g, arachidic acid
14.9g, polypropylene 3.3g, polyethylene 9.2g, beeswax 49.5g；
Fully refined paraffin wax is 58# fully refined paraffin wax, 60# fully refined paraffin wax 1:3 in mass ratio mixing.
In step 2, numerical control machining center use Φ 10- Φ 12mm polycrystalline diamond milling cutter, and using spiral way into
Knife.
In step 2, the initial amount of feeding is 1200mm/min, and depth of cut 0.1mm, the amount of feeding and the depth of cut are with processing
Carry out be gradually reduced, and directly proportional to the thickness of bottom portion of groove, the final amount of feeding is decreased to 600mm/min, and the depth of cut subtracts
As low as 0.05mm.
In step 3, the temperature of baking is 100-120 DEG C, and temperature need to be slowly raised to baking temperature in paraffin subtractive process,
And heating rate should keep 3-5 DEG C/min.
In step 3, the paraffin of removing is recycled, and is reused.
The silicon carbide Fang Jing that mirror biscuit Pocket Machining method shapes using the silicon carbide side, the silicon carbide side mirror bottom
With complicated Lightened structure, front is equipped with groove, and groove diameter is greater than Φ 378mm, and depth is greater than 5mm, and bottom thickness is less than
Equal to 6mm, the hollow distance in distance from bottom loss of weight chamber upper surface is greater than 60mm, it is desirable that machining accuracy ± 0.2mm.The present invention is beneficial to effect
Fruit is as follows:
1. the hollow space of the invention by the way that paraffin to be filled into the loss of weight chamber of silicon carbide side's mirror biscuit, reduces tool sharpening
The vibration generated when silicon carbide biscuit improves silicon carbide side's mirror biscuit machining yield.
2. can be formed silicon carbide side's mirror groove structure in the biscuit stage using the present invention, it is carbonized after effectively reducing firing
The processing capacity of silicon Fang Jing improves production efficiency.
Other features and advantages of the present invention will illustrate in the following description, and become aobvious and easy from specification
See, or understand through the implementation of the invention.The objectives and other advantages of the invention can be by wanting in written specification, right
Specifically noted structure is sought in book and attached drawing to be achieved and obtained.
Detailed description of the invention
Attached drawing is only used for showing the purpose of specific embodiment, and is not to be construed as limiting the invention, in entire attached drawing
In, identical reference symbol indicates identical component.
Fig. 1 is silicon carbide side's mirror Lightened structure schematic diagram；
Fig. 2 is silicon carbide side's mirror groove structure schematic diagram；
Fig. 3 is silicon carbide side's mirror sectional view
Specific embodiment
Specifically describing the preferred embodiment of the present invention with reference to the accompanying drawing, wherein attached drawing constitutes the application a part, and
Together with embodiments of the present invention for illustrating the principle of the present invention.
A kind of silicon carbide side's mirror biscuit Pocket Machining method, which includes following step
It is rapid:
Step 1, paraffin is filled into silicon carbide side's mirror biscuit loss of weight chamber hollow space；
Step 2, the processing that groove is carried out using numerical control machining center；
Step 3 toasts silicon carbide side's mirror biscuit after processing, until paraffin is totally removed.
In step 1, filling is configured with paraffin by compound paraffin and rosin 10:1-5:1 in mass ratio, in the present embodiment
Using 8:1, packing volume is greater than the half of the loss of weight cavity volume, its object is to increase bottom portion of groove support, reduces cutter
The vibration generated when processing silicon carbide biscuit.
The raw material of compound paraffin is every 1kg fully refined paraffin wax addition: palmitinic acid 10g-20g, stearic acid 60g-80g, arachidic acid
10g-20g, polypropylene 2g-5g, polyethylene 8g-15g, beeswax 30g-60g.The raw material of compound paraffin is every 1kg in the present embodiment
Fully refined paraffin wax is added: palmitinic acid 13, stearic acid 72g, arachidic acid 16g, polypropylene 4.0g, polyethylene 12g, beeswax 55g.In paraffin
Middle a small amount of stearic acid, palmitinic acid, the arachidic acid of adding can effectively increase the hardness of compound paraffin, and compound paraffin is made to be easier to machine
Tool processing；Polypropylene and polyethylene is added can increase the hardness and toughness of compound paraffin simultaneously, imitate the damping of compound paraffin
Fruit is more preferably obvious；Beeswax is added, other than it can increase toughness, moreover it is possible to which it is more preferably smooth to make to meet paraffin surface, after guaranteeing processing
Precision and the roughness told somebody what one's real intentions are.
Fully refined paraffin wax is 58# fully refined paraffin wax, 60# fully refined paraffin wax is mixed by any mass ratio, using 58# essence in the present embodiment
Refine the mass mixings such as paraffin, 60# fully refined paraffin wax.
In step 2, numerical control machining center uses the polycrystalline diamond milling cutter of Φ 10mm, and uses spiral way feed, choosing
Select this diameter range polycrystal diamond cutter be based on to cutter cutting force and product processing efficiency comprehensively consider.
In step 2, the initial amount of feeding is 1200mm/min, and depth of cut 0.1mm, the amount of feeding and the depth of cut are with processing
Carry out be gradually reduced, and directly proportional to the thickness of bottom portion of groove, the final amount of feeding is decreased to 600mm/min, and the depth of cut subtracts
As low as 0.05mm.During processing carries out, bottom portion of groove thickness is gradually decreased, the amount of feeding set using processing beginning and penetration of a cutting tool
Amount can increase the vibration of bottom portion of groove, reduce the amount of feeding and bite at this time, can reduce bottom portion of groove vibration, avoid silicon carbide side
Damage is generated during mirror biscuit Pocket Machining.
In step 3, the temperature of baking is 100 DEG C, and heating rate should keep 3-5 DEG C/min to setting in paraffin subtractive process
Temperature, temperature is excessively high to will lead to silicon carbide side's mirror biscuit cracking.
In step 3, the paraffin of removing is recycled, and is reused.
The silicon carbide Fang Jing that mirror biscuit Pocket Machining method shapes using the silicon carbide side, silicon carbide Fang Jing are equipped with
Groove, groove diameter are greater than Φ 378mm, and depth is greater than 5mm, and bottom thickness is less than or equal to 6mm, distance from bottom loss of weight chamber upper surface
Hollow distance is greater than 60mm, it is desirable that machining accuracy ± 0.2mm.
A certain silicon carbide side's mirror biscuit is processed using method of the invention, specific as follows:
The processing of silicon carbide side's mirror biscuit loss of weight cavity segment is completed first, and the clast inside loss of weight chamber must be complete with dust catcher
Portion is cleaned, and heating paraffin is fused into liquid to 100 DEG C, a small amount of vasoliniment is first added, is added again after to be solidified, is repeated
This operation accounts for more than half of loss of weight cavity volume until addition paraffin volume, can stop operation.
Secondly the polycrystalline diamond milling cutter for selecting Φ 10mm, when square mirror biscuit Pocket Machining, start using spiral way into
Knife is processed with the 1200mm/min amount of feeding, the bite of 0.1mm, and when being machined to 4mm depth, the amount of feeding is adjusted to 600mm/
Min, bite are adjusted to 0.05mm and are processed, and pilot process can be adjusted within this range.
After the completion of last silicon carbide side's mirror biscuit whole feature machining, being placed in can be in the baking oven of setting program, setting heating
5 DEG C/min to 100 DEG C of rate heat preservation removes paraffin in 2 hours, and the paraffin of removing is reusable.
In conclusion utilizing the present invention the embodiment of the invention provides a kind of silicon carbide side's mirror biscuit Pocket Machining method
Processing method the yield rate in square mirror biscuit process can be improved to 95% or more, reduce silicon carbide Fang Jing after sintering
Processing capacity, production efficiency can be improved 3-5 times.
The foregoing is only a preferred embodiment of the present invention, but scope of protection of the present invention is not limited thereto,
In the technical scope disclosed by the present invention, any changes or substitutions that can be easily thought of by anyone skilled in the art,
It should be covered by the protection scope of the present invention.
Claims (4)
1. a kind of silicon carbide side's mirror biscuit Pocket Machining method, which is characterized in that silicon carbide side's mirror biscuit Pocket Machining method
The following steps are included:
Step 1, paraffin is filled into silicon carbide side's mirror biscuit loss of weight chamber hollow space；
Step 2, the processing that groove is carried out using numerical control machining center；
Step 3 toasts silicon carbide side's mirror biscuit after processing, until paraffin is totally removed；
In the step 3, the temperature of baking is 100-120 DEG C, and temperature need to be slowly raised to baking temperature in paraffin subtractive process,
And heating rate should keep 3-5 DEG C/min；
In the step 1, filling is configured with paraffin by compound paraffin and rosin 10:1-5:1 in mass ratio, and packing volume is big
In the half of the loss of weight cavity volume；
The raw material of the compound paraffin is every 1kg fully refined paraffin wax addition: palmitinic acid 10g-20g, stearic acid 60g-80g, arachidic acid
10g-20g, polypropylene 2g-5g, polyethylene 8g-15g, beeswax 30g-60g；
The fully refined paraffin wax is 58# fully refined paraffin wax, 60# fully refined paraffin wax by the mixing of any mass ratio；
In the step 2, the numerical control machining center uses the polycrystalline diamond milling cutter of Φ 10- Φ 12mm, and uses spiral side
Formula feed；The initial amount of feeding be 1200mm/min, depth of cut 0.1mm, the amount of feeding and the depth of cut with processing progress by
Decrescence small and directly proportional to the thickness of bottom portion of groove, the final amount of feeding is decreased to 600mm/min, and the depth of cut is decreased to
0.05mm。
2. silicon carbide side's mirror biscuit Pocket Machining method according to claim 1, which is characterized in that the compound paraffin
Raw material is every 1kg fully refined paraffin wax addition: palmitinic acid 16.6g, stearic acid 62.5g, arachidic acid 14.9g, polypropylene 3.3g, polyethylene
9.2g, beeswax 49.5g；
The fully refined paraffin wax is 58# fully refined paraffin wax, 60# fully refined paraffin wax 1:3 in mass ratio mixing.
3. silicon carbide side's mirror biscuit Pocket Machining method according to claim 2, which is characterized in that in the step 3, return
The paraffin of removing is received, and is reused.
4. the silicon carbide side shaped using any silicon carbide side's mirror biscuit Pocket Machining method of claims 1 to 33
Mirror, which is characterized in that the silicon carbide side mirror bottom has complicated Lightened structure, and front is equipped with groove, and groove diameter is greater than Φ
378mm, depth are greater than 5mm, and bottom thickness is less than or equal to 6mm, and the hollow distance in distance from bottom loss of weight chamber upper surface is greater than 60mm,
Seek machining accuracy ± 0.2mm.
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| CN201710036699.0A CN106827255B (en) | 2017-01-18 | 2017-01-18 | A kind of silicon carbide side's mirror biscuit Pocket Machining method |
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| CN201710036699.0A CN106827255B (en) | 2017-01-18 | 2017-01-18 | A kind of silicon carbide side's mirror biscuit Pocket Machining method |
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| CN106827255A CN106827255A (en) | 2017-06-13 |
| CN106827255B true CN106827255B (en) | 2019-05-31 |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1051929A (en) * | 1990-12-06 | 1991-06-05 | 李建新 | Color flame candle |
| JP2012102264A (en) * | 2010-11-11 | 2012-05-31 | Kitagawa Ind Co Ltd | Member for countermeasure against heat |
| CN102880009A (en) * | 2012-09-04 | 2013-01-16 | 清华大学 | Six-degree-of-freedom micro-motion worktable |
| CN102880013A (en) * | 2012-09-28 | 2013-01-16 | 清华大学 | Reticle stage worktable |
| CN104387073A (en) * | 2014-10-09 | 2015-03-04 | 奉化市中立密封件有限公司 | Method for manufacturing ultrafine high-toughness silicon carbide ceramic material based on reaction sintering technology |
| CN105436823A (en) * | 2015-11-24 | 2016-03-30 | 沈阳黎明航空发动机(集团)有限责任公司 | Method for controlling machining deformation of thin-walled part |
| CN105522206A (en) * | 2015-12-29 | 2016-04-27 | 湖南航天环宇通信科技股份有限公司 | Machining method for aluminum alloy thin-walled cavity part |
| WO2016202359A1 (en) * | 2015-06-15 | 2016-12-22 | Bison International B.V. | High strength and moisture resistant adhesive |
-
2017
- 2017-01-18 CN CN201710036699.0A patent/CN106827255B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1051929A (en) * | 1990-12-06 | 1991-06-05 | 李建新 | Color flame candle |
| JP2012102264A (en) * | 2010-11-11 | 2012-05-31 | Kitagawa Ind Co Ltd | Member for countermeasure against heat |
| CN102880009A (en) * | 2012-09-04 | 2013-01-16 | 清华大学 | Six-degree-of-freedom micro-motion worktable |
| CN102880013A (en) * | 2012-09-28 | 2013-01-16 | 清华大学 | Reticle stage worktable |
| CN104387073A (en) * | 2014-10-09 | 2015-03-04 | 奉化市中立密封件有限公司 | Method for manufacturing ultrafine high-toughness silicon carbide ceramic material based on reaction sintering technology |
| WO2016202359A1 (en) * | 2015-06-15 | 2016-12-22 | Bison International B.V. | High strength and moisture resistant adhesive |
| CN105436823A (en) * | 2015-11-24 | 2016-03-30 | 沈阳黎明航空发动机(集团)有限责任公司 | Method for controlling machining deformation of thin-walled part |
| CN105522206A (en) * | 2015-12-29 | 2016-04-27 | 湖南航天环宇通信科技股份有限公司 | Machining method for aluminum alloy thin-walled cavity part |
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| CN106827255A (en) | 2017-06-13 |
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