CN106816486B - 一种n型ibc太阳能电池拼片连接的电池串及其制备方法、组件和*** - Google Patents
一种n型ibc太阳能电池拼片连接的电池串及其制备方法、组件和*** Download PDFInfo
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Abstract
本发明涉及一种N型IBC太阳能电池拼片连接的电池串及其制备方法、组件和***,包括窄条N型IBC太阳能电池和用于所述窄条N型IBC太阳能电池之间欧姆连接的导电件,窄条N型IBC太阳能电池的背表面包括相互交替排列的发射极p+区域和基极n+区域,发射极p+区域设有p+发射极接触电极,基极n+区域设有n+基极接触电极;还包括设置在p+发射极接触电极上的p+电极汇流点和设置在n+基极接触电极上的n+电极汇流点,汇流点的周围区域设置有绝缘阻挡层,导电件设置在相邻窄条N型IBC电池之间。其有益效果是:本发明采用绝缘阻挡层和使用导电件的方法实现太阳能N型IBC电池拼片连接的电池串,由于电池片之间的缝隙可以控制在0.2mm以下,因此组件的功率较传统的电池串连接方式会高出很多,另外组件的制作工艺简单,成本低。
Description
技术领域
本发明涉及太阳能电池技术领域,具体涉及一种N型IBC太阳能电池拼片连接的电池串及其制备方法、组件和***。
背景技术
太阳能电池是一种将光能转化为电能的半导体器件,较低的生产成本和较高的能量转化效率一直是太阳能电池工业追求的目标。对于目前常规太阳能电池,其发射极接触电极和基极接触电极分别位于电池片的正反两面。电池的正面为受光面,正面金属发射极接触电极的覆盖必将导致一部分入射的太阳光被金属电极所反射遮挡,造成一部分光学损失。普通晶硅太阳能电池的正面金属电极的覆盖面积在7%左右,减少金属电极的正面覆盖可以直接提高电池的能量转化效率。N型IBC太阳能电池是一种将发射极和基极接触电极均放置在电池背面(非受光面)的电池,该电池的受光面无任何金属电极遮挡,从而有效增加了电池片的短路电流,使电池片的能量转化效率得到提高。
N型IBC结构的太阳能电池是目前太阳能工业化批量生产的晶硅太阳能电池中能量转化效率最高的一种电池,它的高转化效率、低组件封装成本,一直深受人们青睐。在以往的N型IBC太阳能电池制作工艺中,其金属化工艺大都采用流程较为复杂的电镀来实现,该方法在降低N型IBC电池的串联电阻、提高电池的开路电压确实有出色的表现,但是该方法工艺复杂,排放的废弃物严重污染环境,且与目前工业化生产的主流金属化方法不相兼容,因此不利于低成本的产业化推广。同时,在将N型IBC电池封装成组件的过程中,由于发射极和基极电极根数较多、线宽较窄,相邻电池之间的对准焊接非常困难。另一方面,在将电池封装成组件的过程中,功率的损失很大一部分来自焊接电阻和焊带电阻,单片电池的短路电流越高,这部分功率损失就越大。
发明内容
本发明的目的在于克服现有技术的不足,提供一种N型IBC太阳能电池拼片连接的电池串,其技术方案为:
一种N型IBC太阳能电池拼片连接的电池串,包括窄条N型IBC太阳能电池和用于所述窄条N型IBC太阳能电池之间欧姆连接的导电件,所述窄条N型IBC太阳能电池的背表面包括相互交替排列的发射极p+区域和基极n+区域,所述发射极p+区域设有p+发射极接触电极,所述基极n+区域上设有p+基极接触电极;还包括设置在所述p+发射极接触电极的上p+电极汇流点和设置在所述n+基极接触电极上的n+电极汇流点,所述p+电极汇流点和所述n+电极汇流点的周围区域均设置有绝缘阻挡层,所述导电件设置在相邻所述窄条N型IBC电池之间。
本发明提供的一种N型IBC太阳能电池拼片连接的电池串,还可以包含如下附属技术方案:
其中,所述窄条N型IBC电池包括N型晶体硅基体,所述N型晶体硅基体的前表面从内到外依次为n+掺杂前表面场和前表面钝化减反膜;所述N型晶体硅基体的背表面从内到外依次为交替排列的背表面p+区域和背表面n+区域、背表面钝化膜和背表面电极,所述背表面电极包括p+发射极接触电极和n+基极接触电极。
其中,所述窄条N型IBC太阳能电池的硅基体的电阻率为1-30Ω·cm,厚度为100-200μm;所述发射极p+区域和所述基极n+区域呈长条状相间分布于太阳能电池基体背表面。
其中,所述发射极p+区域的宽度为500-1500μm,所述基极n+区域的宽度为200-500μm。
其中,所述p+发射极接触电极和所述n+基极接触电极的宽度均为50-150um。
其中,所述p+电极汇流点和所述n+电极汇流点在电池上呈条状有序排列;所述p+电极汇流点和所述n+电极汇流点均是直径为500um的圆点或边长500um的方点或与面积相当的其它形状的金属点。
其中,所述p+发射极接触电极和所述n+基极接触电极均为金属银细栅线电极,所述p+电极汇流点和所述n+电极汇流点均为金属银点。
其中,所述绝缘阻挡层的形状为长条状,其宽度为5-10mm,长度为156mm,所述绝缘阻挡层分别覆盖在所述p+电极汇流点和所述n+电极汇流点所在的阵列上,所述p+电极汇流点和所述n+电极汇流点不被所述绝缘阻挡层覆盖。
本发明还提供了一种N型IBC太阳能电池拼片连接电池串的制备方法,包括以下步骤:
(1)、在太阳能电池基体的背表面形成相互交替排列的发射极p+区域和基极n+区域,并制备与发射极p+区域相欧姆接触的p+发射极接触电极和与基极n+区域相接触的n+基极接触电极,再在所述p+发射极接触电极上制备p+电极汇流点和在n+基极接触电极上制备n+电极汇流点;
(2)、利用丝网印刷技术将绝缘浆料印刷在所述p+电极汇流点和所述n+电极汇流点所在的条状上,所述p+电极汇流点和所述n+电极汇流点裸漏出所述绝缘浆料,烘干后形成绝缘阻挡层;
(3)、沿所述绝缘阻挡层中心将N型IBC太阳能电池基体切割成多片窄条状N型IBC电池,所述N型窄条状IBC电池长边的最外两侧分别为p+电极汇流点条状和n+电极汇流点条状;切割的方式为激光切割;
(4)、将所述窄条状N型IBC电池按规则排列,相邻两个窄条状N型IBC电池的相邻位置为其中窄条状N型IBC电池的p+电极汇流点阵列和另一窄条状N型IBC电池的n+电极汇流点排列,将导电胶涂覆在所述p+电极汇流点和所述n+电极汇流点上,并在窄条状N型IBC电池的相邻位置处铺设导电件,使得相邻窄条状N型IBC太阳能电池的p+电极汇流点与n+电极汇流点通过所述导电件电连接,重复该步骤,以形成N型IBC太阳能电池拼片连接的电池串。
本发明提供的一种N型IBC太阳能电池拼片连接的电池串的制备方法,还可以包含如下附属技术方案:
其中,步骤(1)中,p+电极汇流点和n+电极汇流点呈阵列状排列,每列所述p+电极汇流点或所述n+电极汇流点的个数为10-20个,并均匀分布。
其中,
步骤(4)中,所述导电件的宽度为4-8mm,厚度为0.1-0.5mm,材质为镀锡铜带。
本发明还提供了一种太阳能电池组件,包括太阳能电池串,所述太阳能电池串为上述的N型IBC太阳能电池拼片连接的电池串。
本发明还提供了一种太阳能电池***,包括一个以上的太阳能电池组件,所述太阳能电池组件是上述的太阳能电池组件。
本发明的实施包括以下技术效果:
本发明采用切片后的N型IBC电池片之间拼片连接的方式,极大地缩小了电池片之间的缝隙,提高了单位面积可摆放电池片的数量,从而提高了采用该电池串制作的组件的功率;并且,采用绝缘阻挡层和使用导电件的方法实现N型IBC电池拼片连接的电池串,其中,绝缘层的使用极大地降低了设备的对准精度要求,使得组件制作无需焊接,操作简单;同时导电件还起到横向汇流的作用,减少了载流子在电极之间的横向传输损耗,提高了电池的填充因子;由于采用非整片的窄条状电池进行串连,降低了组件的短路电流,从而显著地降低了组件封装损耗。
附图说明
图1为本发明实施例的N型IBC太阳能背表面结构示意图。
图2为本发明实施例的N型IBC太阳能电池印刷绝缘阻挡层后的背面结构示意图。
图3为本发明实施例的N型IBC太阳能电池切割成窄条状N型IBC电池的示意图。
图4为本发明实施例的窄条N型IBC太阳能电池按规则排列并在汇流点上涂覆上导电胶后的示意图。
图5为本发明实施例的N型IBC太阳能电池串的制备方法中通过导电件串接后的窄条状N型IBC电池示意图。
具体实施方式
下面将结合实施例以及附图对本发明加以详细说明,需要指出的是,所描述的实施例仅旨在便于对本发明的理解,而对其不起任何限定作用。
参见图1-5所示,本实施例提供的一种N型IBC太阳能电池拼片连接的电池串,包括窄条N型IBC太阳能电池和用于所述窄条N型IBC太阳能电池之间欧姆连接的导电件,所述窄条N型IBC太阳能电池的背表面包括相互交替排列的发射极p+区域1和基极n+区域3,所述发射极p+区域1设有p+发射极接触电极2,所述基极n+区域3设有n+基极接触电极4,还包括设置在p+发射极接触电极2上的p+电极汇流点5和设置在n+基极接触电极4上的n+电极汇流点6,所述p+电极汇流点5和n+电极汇流点6用于收集电流并传输到外电路;所述p+电极汇流点和所述n+电极汇流点的周围区域均设置有绝缘阻挡层,所述导电件设置在相邻所述窄条N型IBC电池之间。
优选地,所述窄条N型IBC电池包括N型晶体硅基体,所述N型晶体硅基体的前表面从内到外依次为n+掺杂前表面场和前表面钝化减反膜;背表面从内到外依次为交替排列的背表面p+区域1和背表面n+区域3、背表面钝化膜和背表面电极,所述背表面电极包括p+发射极接触电极2和n+基极接触电极4。
优选地,所述窄条N型IBC太阳能电池的硅基体的电阻率为1-30Ω·cm,厚度为100-200μm;所述发射极p+区域1和所述基极n+区域3呈长条状相间分布于太阳能电池基体背表面;发射极p+区域1的宽度为500-1500μm,基极n+区域3的宽度为200-500μm。
优选地,N型IBC太阳能电池背表面p+发射极接触电极2的宽度为50-150um,n+基极接触电极的宽度为50-150um,p+发射极接触电极2上设置有p+电极汇流点5,n+基极接触电极4上设置有n+电极汇流点6,p+电极汇流点5和n+电极汇流点6分布在电池片上呈条状有序排列,所述p+电极汇流点5和所述n+电极汇流点6均是直径为500um的圆点或边长500um的方点或与面积相当的其它形状的金属点;p+发射极接触电极2、p+电极汇流点5、n+基极接触电极4、n+电极汇流点6的电极材质均为金属银。
优选地,参见图2所示,所述绝缘阻挡层7的形状为长条状,其宽度为5-10mm,长度为156mm,所述绝缘阻挡层7分别覆盖在所述p+电极汇流点5和所述n+电极汇流点6所在的阵列上,所述p+电极汇流点5和所述n+电极汇流点6不被绝缘阻挡层覆盖。
本实施例提供的一种N型IBC太阳能电池拼片连接的电池串的制备方法,包括以下步骤:
(1)、如图1所示,在太阳能电池基体的背表面形成相互交替排列的发射极p+区域1和基极n+区域3,并制备与发射极p+区域1相欧姆接触的p+发射极接触电极2和基极n+区域3相接触的n+基极接触电极4,再在所述p+发射极接触电极3上制备p+电极汇流点5和在n+基极接触电极4上制备n+电极汇流点6;
(2)、如图2所示,利用丝网印刷技术将绝缘浆料印刷在p+电极汇流点5和n+电极汇流点6所在的条状上,所述p+电极汇流点5和所述n+电极汇流点6裸漏出所述绝缘浆料,烘干后形成绝缘阻挡层7;
(3)、如图3所示,沿绝缘阻挡层中心将N型IBC太阳能电池基体切割成多片窄条状N型IBC电池,N型窄条状IBC电池长边的最外两侧分别为p+电极汇流点条状和n+电极汇流点条状;切割的方式优选为激光切割。
(4)、如图4-5所示,将窄条状N型IBC电池按规则排列,相邻两个窄条电池片的相邻位置为其中一电池片的p+电极汇流点5阵列和另一电池片的n+电极汇流点6阵列,将导电胶8涂覆在p+电极汇流点5和n+电极汇流点6上;在相邻电池交界处铺设导电件9,导电件9的宽度为4-8mm,厚度为0.1-0.5mm,材质为镀锡铜带,通过导电件9使得相邻窄条N型IBC太阳能电池的p+电极汇流点5与n+电极汇流点6相欧姆连接,重复该步骤,形成N型IBC太阳能电池拼片连接的电池串。
优选地,步骤(1)中,p+电极汇流5点和n+电极汇流点6呈列状排列,每列p+电极汇流点5或n+电极汇流点6的个数为20个,并均匀分布;
优选地,步骤(4)中,导电件9的宽度为4-8mm,厚度为0.1-0.5mm,材质为镀锡铜带。
本实施例还提供了一种太阳能电池组件,包括太阳能电池串,太阳能电池串为上述的N型IBC太阳能电池串。
本实施例还提供了一种太阳能电池***,包括一个以上的太阳能电池组件,太阳能电池组件是上述的太阳能电池组件。
最后应当说明的是,以上实施例仅用以说明本发明的技术方案,而非对本发明保护范围的限制,尽管参照较佳实施例对本发明作了详细地说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或者等同替换,而不脱离本发明技术方案的实质和范围。
Claims (3)
1.一种N型IBC太阳能电池拼片连接的电池串的制备方法,包括以下步骤:
(1)、在太阳能电池基体的背表面形成相互交替排列的发射极p+区域和基极n+区域,并制备与发射极p+区域相欧姆接触的p+发射极接触电极和与基极n+区域相接触的n+基极接触电极,再在所述p+发射极接触电极上制备p+电极汇流点和在n+基极接触电极上制备n+电极汇流点;
(2)、利用丝网印刷技术将绝缘浆料印刷在所述p+电极汇流点和所述n+电极汇流点所在的条状上,所述p+电极汇流点和所述n+电极汇流点裸漏出所述绝缘浆料,烘干后形成绝缘阻挡层;
(3)、沿所述绝缘阻挡层中心将N型IBC太阳能电池基体切割成多片窄条状N型IBC电池,所述窄条状N型IBC电池长边的最外两侧分别为p+电极汇流点条状和n+电极汇流点条状;切割的方式为激光切割;
(4)、将所述窄条状N型IBC电池按规则排列,相邻两个窄条状N型IBC电池的相邻位置为其中一窄条状N型IBC电池的p+电极汇流点阵列和另一窄条状N型IBC电池的n+电极汇流点排列,将导电胶涂覆在所述p+电极汇流点和所述n+电极汇流点上,并在窄条状N型IBC电池的相邻位置处铺设导电件,使得相邻窄条状N型IBC电池的p+电极汇流点与n+电极汇流点通过所述导电件电连接,重复该步骤,以形成窄条状N型IBC电池拼片连接的电池串。
2.根据权利要求1所述的N型IBC太阳能电池拼片连接的电池串的制备方法,其特征在于:
步骤(1)中,所述p+电极汇流点和所述n+电极汇流点呈阵列状排列,每列所述p+电极汇流点或所述n+电极汇流点的个数为10-20个,并均匀分布。
3.根据权利要求1所述的N型IBC太阳能电池拼片连接的电池串的制备方法,其特征在于:
步骤(4)中,所述导电件的宽度为4-8mm,厚度为0.1-0.5mm,材质为镀锡铜带。
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