CN106816397A - Bottom electrode assembly and semiconductor processing equipment - Google Patents
Bottom electrode assembly and semiconductor processing equipment Download PDFInfo
- Publication number
- CN106816397A CN106816397A CN201510867497.1A CN201510867497A CN106816397A CN 106816397 A CN106816397 A CN 106816397A CN 201510867497 A CN201510867497 A CN 201510867497A CN 106816397 A CN106816397 A CN 106816397A
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- China
- Prior art keywords
- chuck
- electrode assembly
- bottom electrode
- radio frequency
- pedestal
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Bottom electrode assembly and semiconductor processing equipment that the present invention is provided, it includes chuck, chuck pedestal and radio frequency lead-through, wherein, chuck pedestal is used to carry chuck；Radio frequency lead-through is used to for radio-frequency current to introduce chuck, wherein, insulated support is provided between chuck and chuck pedestal, it is used to be electrically insulated on chuck and chuck pedestal；Also, the chuck base seated connection ground.The through hole run through along its thickness is respectively correspondingly provided with chuck pedestal and insulated support, radio frequency lead-through is from bottom to top fixedly connected through through hole and with chuck, and radio frequency lead-through is spaced with chuck pedestal and insulated support respectively.The bottom electrode assembly that the present invention is provided, it can not only reduce the loss of RF energy, but also can improve the stability of radio frequency current circuit.
Description
Technical field
The present invention relates to field of semiconductor manufacture, in particular it relates to a kind of bottom electrode assembly and
Semiconductor processing equipment.
Background technology
Graphical sapphire substrate (Patterned Sapphire Substrates, hereinafter referred to as
PSS it is) to make a kind of commonly used backing material of LED chip at present, it is in sapphire
Required microstructure graph is produced by etching technics on substrate.It is increasingly increased in order to tackle
The market demand, generally carries multiple sapphire substrates, then by manipulator simultaneously using pallet
The incoming processing chamber of pallet of sapphire substrate is will be equipped with, and is placed on bottom electrode assembly.Should
Bottom electrode assembly serves not only as the carrier of pallet, while for inductive provides RF energy
Feed-in, makes RF energy form effective loop.
Fig. 1 is the sectional view of existing bottom electrode assembly.Refer to Fig. 1, bottom electrode assembly bag
Chuck 1, chuck pedestal 2 and radio frequency lead-through 3 are included, wherein, chuck 1 is used for bearing tray
(not shown).Chuck pedestal 2 is used to carry chuck 1, the two company of being bolted
Connect, and seal 5 is provided between chuck 1 and chuck pedestal 2, be used to the two it
Between gap sealed.Radio frequency lead-through 3 from bottom to top runs through chuck pedestal 2, and takes
Slotting mode is connected with chuck 1 soon, is used to for radio-frequency current to be fed into chuck 1 and chuck pedestal 2
In, the flow direction of radio-frequency current is as shown in the direction of arrow in Fig. 1, so that real be now placed on
Bias is loaded on the workpiece to be machined of the upper surface of chuck 1, to attract plasma etching to be processed
The upper surface of workpiece.
Above-mentioned bottom electrode assembly is inevitably present problems with actual applications：
One, due to radio frequency lead-through 3 simultaneously be in contact with chuck 1 and chuck pedestal 2,
Again due to being subject to processing the influence with scale error, lower surface and the chuck pedestal 2 of chuck 1
Upper surface between often there is small gap, and radio-frequency current has and curries favor with conductive surface
The characteristics of, cause to form electric capacity between the lower surface of chuck 1 and the upper surface of chuck pedestal 2
Layer, this causes that radio-frequency current is produced in the lower surface of chuck 1 and the upper surface of chuck pedestal 2 respectively
Raw radio-frequency current branch road, so as to cause the loss of RF energy.
Second, because the compression ratio of the various location of seal 5 is it cannot be guaranteed that identical,
Cause the gap between the lower surface of chuck 1 and the upper surface of chuck pedestal 2 in various location
Vertical spacing, this causes that radio frequency current circuit has unstability, so as to cause when penetrating
When frequency power increases, (bias value answers radio frequency work(to bias trend in theory with theoretical grave fault
The increase of rate and increase, and the bias value curve of reality present parabola state).
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, it is proposed that
A kind of bottom electrode assembly and semiconductor processing equipment, its damage that can not only reduce RF energy
Lose, but also the stability of radio frequency current circuit can be improved.
A kind of bottom electrode assembly is provided to realize the purpose of the present invention, including chuck, chuck
Pedestal and radio frequency lead-through, wherein, the chuck pedestal is used to carry the chuck；It is described to penetrate
Frequency lead-through is used to for radio-frequency current to introduce the chuck, in the chuck and the chuck pedestal
Between be provided with insulated support, be used to be electrically insulated the chuck with the chuck pedestal；And
And, the chuck base seated connection ground；Respectively correspondingly in the chuck pedestal and the insulating supporting
The through hole run through along its thickness is provided with part, the radio frequency lead-through is from bottom to top described in
Through hole, and being fixedly connected with the chuck, and the radio frequency lead-through respectively with the chuck
Pedestal and the insulated support are spaced.
Preferably, the radio frequency lead-through is in the form of a column, and is vertically arranged, and is penetrated described
The upper end of frequency lead-through is provided with erecting bed, and the radio frequency lead-through passes through the erecting bed and institute
State chuck to be fixedly connected, and conduct.
Preferably, in the lower surface of the chuck, and set fluted in the through hole,
The erecting bed is located in the groove, and is fixedly connected with the chuck by screw.
Preferably, section shape of the erecting bed with the groove on the axis of the chuck
Shape mutually coincide.
Preferably, the radio frequency lead-through is cable.
Preferably, the bottom electrode assembly also includes shielding cylinder, and the shielding cylinder is fixed on institute
The bottom of chuck pedestal is stated, and is looped around the radio frequency lead-through and stretched from the chuck base bottom
Around the part for going out；The shielding cylinder ground connection.
Preferably, the shielding cylinder is fixedly connected by screw with the chuck pedestal.
Preferably, the bottom electrode assembly also includes at least three thimbles and thimble drive mechanism,
Wherein, the thimble drive mechanism is used to drive at least three thimble to rise or fall, with
The top of the thimble is set to sequentially pass through the chuck pedestal, insulated support and chuck, and on
It is elevated above at the position of the chuck upper surface, or is decreased below the chuck upper surface
Position at；At least three thimbles ground connection.
Preferably, the material that the insulated support is used includes ceramics or quartz.
Used as another technical scheme, the present invention also provides a kind of semiconductor processing equipment, wraps
Reaction chamber, top electrode assembly and bottom electrode assembly are included, wherein, the top electrode assembly is set
At the top of the reaction chamber, plasma is formed for the reacting gas in provocative reaction chamber
Body；The bottom electrode assembly is arranged in the reaction chamber, for carrying workpiece to be machined,
And realize the feed-in of RF energy, the above-mentioned lower electricity that the bottom electrode assembly is provided using the present invention
Pole component.
The invention has the advantages that：
The bottom electrode assembly that the present invention is provided, it sets insulation branch in chuck and chuck pedestal
Support member, and make chuck base seated connection ground；Meanwhile, radio frequency lead-through is from bottom to top sequentially passed through card
The through hole of disk pedestal and insulated support, and be fixedly connected with chuck, and the radio frequency lead-through
It is spaced with chuck pedestal and insulated support respectively, i.e. radio frequency lead-through is directly and chuck
Connection, without being in contact with chuck pedestal.The radio frequency electrical of chuck base-plates surface can so be eliminated
Stream branch road, such that it is able to reduce the loss of RF energy, and due to chuck pedestal and chuck electricity
Insulation, and chuck base seated connection ground, this can not only improve the stability of radio frequency current circuit, and
And can also ensure RF energy can whole feed-in chucks, so as to improve the utilization of RF energy
Rate.
The semiconductor processing equipment that the present invention is provided, it passes through the lower electricity provided using the present invention
Pole component, can not only reduce the loss of RF energy, but also can improve radio frequency electrical and flow back to
The stability on road, so as to improve the utilization rate of RF energy.
Brief description of the drawings
Fig. 1 is the sectional view of existing bottom electrode assembly；
Fig. 2 is the sectional view of bottom electrode assembly provided in an embodiment of the present invention.
Specific embodiment
To make those skilled in the art more fully understand technical scheme, tie below
The bottom electrode assembly and semiconductor processing equipment for closing accompanying drawing to provide the present invention are retouched in detail
State.
Fig. 2 is the sectional view of bottom electrode assembly provided in an embodiment of the present invention.Fig. 2 is referred to,
Bottom electrode assembly includes chuck 10, chuck pedestal 12 and radio frequency lead-through 13, wherein, chuck
10 are used for bearing tray, and the pallet is used to carry one or more substrates, and substrate is usually silicon
Piece or sapphire sheet, diameter range is more than 2 cun.Chuck pedestal 12 is used to carry chuck
10, and insulated support 11 is provided between chuck 10 and chuck pedestal 12, be used to by
Chuck 10 is electrically insulated with chuck pedestal 12.Also, chuck pedestal 12 is grounded.In chuck base
The through hole 121 run through along its thickness is provided with seat 12, and accordingly, in insulated support
It is provided with the through hole 111 run through along its thickness in 11, radio frequency lead-through 13 is from bottom to top successively
Through through hole 121 and through hole 111, and it is fixedly connected with chuck 10, and radio frequency lead-through
13 is spaced with chuck pedestal 12 and insulated support 11 respectively, i.e. radio frequency lead-through
13 are directly connected with chuck 10, without being in contact with chuck pedestal 12.Can so eliminate
The radio-frequency current branch road on the surface of chuck pedestal 12, such that it is able to reduce the loss of RF energy,
And because chuck pedestal 12 is electrically insulated with chuck 10, and chuck pedestal 12 is grounded, this is not
The stability of radio frequency current circuit can be only improved, but also can ensure that RF energy can be complete
Portion's feed-in chuck 10, so as to improve the utilization rate of RF energy.Preferably, above-mentioned insulation branch
Insulating materials of the material that support member 11 is used including ceramics or quartz etc. makes.
In the present embodiment, radio frequency lead-through 13 is in the form of a column, and is vertically arranged, i.e. radio frequency
Lead-through 13 is a metal bar for column, and the external diameter of the metal bar is respectively smaller than above-mentioned leading to
Hole 121 and the diameter of through hole 111, to ensure it with chuck pedestal 12 and insulated support 11
Between keep interval.Also, in the lower surface of chuck 10, and set in through hole 111
Fluted 101, and the upper end of radio frequency lead-through 13 is provided with erecting bed 131, the installation
Platform 131 is located in groove 101, and is fixed with chuck 10 by screw (not shown)
Connection, so as to realize conducting for radio frequency lead-through 13 and chuck 10.By above-mentioned erecting bed
131, the installation of radio frequency lead-through 13 is not only contributed to, but also radio frequency lead-through can be increased
Effective contact area between 13 and chuck 10, so as to ensure radio frequency lead-through 13 and chuck
Contact between 10 is good.Additionally, by above-mentioned groove 101, not only acting as and radio frequency being drawn
Enter the positioning action of part 13, but also can further increase radio frequency lead-through 13 and chuck
Effective contact area between 10.Preferably, in order to improve radio frequency lead-through 13 and chuck 10
Between stable connection, erecting bed 131 and groove 101 cutting on the axis of chuck 10
Face shape is mutually coincide, that is to say, that the upper surface of erecting bed 131 and the bottom surface of groove 101,
And the side of erecting bed 131 is fitted completely with the side of groove 101.
In actual applications, it is also possible to do not design above-mentioned groove 101, and only by above-mentioned erecting bed
131 upper surface fits with the lower surface of chuck 10, and this can equally realize the electricity of the two
Conducting.Additionally, radio frequency lead-through can also use other arbitrary structures, and use other
Meaning mode is fixedly connected with chuck 10.
In the present embodiment, bottom electrode assembly also includes the shielding cylinder 14 of ground connection, the shielding cylinder
14 are fixed on the bottom of chuck pedestal 12, and are looped around radio frequency lead-through 13 from chuck pedestal 12
Around the part that bottom is stretched out, i.e. expose radio frequency lead-through 13 from chuck pedestal 12
Chuck pedestal 12 wherein, radio frequency environment is placed in such that it is able to further ensure that by part cladding
In addition, and then the loss of RF energy can be reduced.Shielding cylinder 14 can be by screw and card
Disk pedestal 12 is fixedly connected.
In the present embodiment, bottom electrode assembly also includes ejector pin mechanism 15, the ejector pin mechanism 15
It is made up of at least three thimbles and thimble drive mechanism.Wherein, thimble drive mechanism is used to drive
At least three thimbles rise or fall so that the top of thimble sequentially pass through chuck pedestal 12,
Insulated support 11 and chuck 10, and rise above at the position of the upper surface of chuck 10,
Or be decreased below at the position of the upper surface of chuck 10, realized to pallet with cooperative mechanical hand
Loading or unloading operation.Preferably, at least three thimbles are grounded, to be placed in outside radio frequency environment,
Such that it is able to further reduce the loss of RF energy.
It should be noted that in the present embodiment, radio frequency lead-through 13 is a gold for column
Category rod, but the invention is not limited in this, in actual applications, radio frequency lead-through can be with
It is other conducting elements of such as cable etc., it is preferred that cable uses band armour formula cable, with true
It is protected to be electrically insulated between chuck pedestal and insulated support.
Used as another technical scheme, the embodiment of the present invention also provides a kind of semiconductor machining and sets
Standby, it includes reaction chamber, top electrode assembly and bottom electrode assembly, wherein, top electrode assembly
The top of reaction chamber is arranged on, plasma is formed for the reacting gas in provocative reaction chamber
Body.Bottom electrode assembly is arranged in reaction chamber, and for carrying workpiece to be machined, and realization is penetrated
The feed-in of frequency energy.And, the bottom electrode assembly employs provided in an embodiment of the present invention above-mentioned
Bottom electrode assembly.
Semiconductor processing equipment provided in an embodiment of the present invention, it passes through to implement using the present invention
The above-mentioned bottom electrode assembly that example is provided, can not only reduce the loss of RF energy, but also can
To improve the stability of radio frequency current circuit, so as to improve the utilization rate of RF energy.
It is understood that the principle that is intended to be merely illustrative of the present of embodiment of above and
The illustrative embodiments of use, but the invention is not limited in this.For in the art
For those of ordinary skill, without departing from the spirit and substance in the present invention, can do
Go out all variations and modifications, these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of bottom electrode assembly, including chuck, chuck pedestal and radio frequency lead-through, wherein,
The chuck pedestal is used to carry the chuck；The radio frequency lead-through is used to draw radio-frequency current
Enter the chuck, it is characterised in that be provided between the chuck and the chuck pedestal absolutely
Edge support member, is used to be electrically insulated the chuck with the chuck pedestal；Also, the chuck
Pedestal is grounded；
Respectively correspondingly it is provided with the chuck pedestal and the insulated support thick along it
The through hole that runs through of degree, the radio frequency lead-through from bottom to top passes through the through hole, and with the card
Disk is fixedly connected, and the radio frequency lead-through respectively with the chuck pedestal and the insulation branch
Support member is spaced.
2. bottom electrode assembly according to claim 1, it is characterised in that the radio frequency
Lead-through is in the form of a column, and is vertically arranged, and the upper end of the radio frequency lead-through is provided with peace
Dress platform, the radio frequency lead-through is fixedly connected by the erecting bed with the chuck, and conductance
It is logical.
3. bottom electrode assembly according to claim 2, it is characterised in that in the card
The lower surface of disk, and set fluted in the through hole, the erecting bed is located at described recessed
In groove, and it is fixedly connected with the chuck by screw.
4. bottom electrode assembly according to claim 3, it is characterised in that the installation
Cross sectional shape of the platform with the groove on the axis of the chuck mutually coincide.
5. bottom electrode assembly according to claim 1, it is characterised in that the radio frequency
Lead-through is cable.
6. the bottom electrode assembly according to claim 1-5 any one, it is characterised in that
The bottom electrode assembly also includes shielding cylinder, and the shielding cylinder is fixed on the bottom of the chuck pedestal
Portion, and it is looped around the week of the part that the radio frequency lead-through stretches out from the chuck base bottom
Enclose；
The shielding cylinder ground connection.
7. bottom electrode assembly according to claim 6, it is characterised in that the shielding
Cylinder is fixedly connected by screw with the chuck pedestal.
8. bottom electrode assembly according to claim 1, it is characterised in that the lower electricity
Pole component also includes at least three thimbles and thimble drive mechanism, wherein,
The thimble drive mechanism is used to drive at least three thimble to rise or fall, with
The top of the thimble is set to sequentially pass through the chuck pedestal, insulated support and chuck, and on
It is elevated above at the position of the chuck upper surface, or is decreased below the chuck upper surface
Position at；
At least three thimbles ground connection.
9. bottom electrode assembly according to claim 1, it is characterised in that the insulation
The material that support member is used includes ceramics or quartz.
10. a kind of semiconductor processing equipment, including reaction chamber, top electrode assembly and bottom electrode
Component, wherein, the top electrode assembly is arranged on the top of the reaction chamber, for exciting
Reacting gas in reaction chamber forms plasma；The bottom electrode assembly is arranged on described anti-
Answer in chamber, for carrying workpiece to be machined, and realize the feed-in of RF energy, its feature exists
In the bottom electrode assembly is using the bottom electrode assembly described in claim 1-9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510867497.1A CN106816397A (en) | 2015-12-01 | 2015-12-01 | Bottom electrode assembly and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510867497.1A CN106816397A (en) | 2015-12-01 | 2015-12-01 | Bottom electrode assembly and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106816397A true CN106816397A (en) | 2017-06-09 |
Family
ID=59107872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510867497.1A Pending CN106816397A (en) | 2015-12-01 | 2015-12-01 | Bottom electrode assembly and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106816397A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107093545A (en) * | 2017-06-19 | 2017-08-25 | 北京北方华创微电子装备有限公司 | The bottom electrode mechanism and reaction chamber of reaction chamber |
| CN107393803A (en) * | 2017-07-28 | 2017-11-24 | 武汉华星光电技术有限公司 | Lower electrode arrangement and dry ecthing board for dry ecthing board |
| CN109148251A (en) * | 2017-06-19 | 2019-01-04 | 北京北方华创微电子装备有限公司 | The bottom electrode mechanism and reaction chamber of reaction chamber |
| CN111446201A (en) * | 2020-04-02 | 2020-07-24 | 北京北方华创微电子装备有限公司 | Bearing device and semiconductor equipment |
| CN111987031A (en) * | 2019-05-23 | 2020-11-24 | 北京北方华创微电子装备有限公司 | Chuck device and semiconductor device |
| CN112011778A (en) * | 2020-08-26 | 2020-12-01 | 北京北方华创微电子装备有限公司 | Chuck assembly in semiconductor process equipment and semiconductor process equipment |
| CN112760609A (en) * | 2020-12-22 | 2021-05-07 | 北京北方华创微电子装备有限公司 | Magnetron sputtering device |
| CN113421812A (en) * | 2021-06-23 | 2021-09-21 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and bearing device thereof |
| WO2024091389A1 (en) * | 2022-10-24 | 2024-05-02 | Lam Research Corporation | Heat flow control in a processing tool |
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Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11410833B2 (en) | 2017-06-19 | 2022-08-09 | Beijing Naura Microelectronics Equipment Co., Ltd. | Lower electrode mechanism and reaction chamber |
| CN109148251A (en) * | 2017-06-19 | 2019-01-04 | 北京北方华创微电子装备有限公司 | The bottom electrode mechanism and reaction chamber of reaction chamber |
| CN107093545A (en) * | 2017-06-19 | 2017-08-25 | 北京北方华创微电子装备有限公司 | The bottom electrode mechanism and reaction chamber of reaction chamber |
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| CN107393803A (en) * | 2017-07-28 | 2017-11-24 | 武汉华星光电技术有限公司 | Lower electrode arrangement and dry ecthing board for dry ecthing board |
| CN111987031A (en) * | 2019-05-23 | 2020-11-24 | 北京北方华创微电子装备有限公司 | Chuck device and semiconductor device |
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| CN112011778A (en) * | 2020-08-26 | 2020-12-01 | 北京北方华创微电子装备有限公司 | Chuck assembly in semiconductor process equipment and semiconductor process equipment |
| TWI767874B (en) * | 2020-12-22 | 2022-06-11 | 大陸商北京北方華創微電子裝備有限公司 | Magnetron Sputtering Equipment |
| WO2022135366A1 (en) * | 2020-12-22 | 2022-06-30 | 北京北方华创微电子装备有限公司 | Magnetron sputtering device |
| CN112760609A (en) * | 2020-12-22 | 2021-05-07 | 北京北方华创微电子装备有限公司 | Magnetron sputtering device |
| KR20230113597A (en) * | 2020-12-22 | 2023-07-31 | 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. | Magnetron Sputtering Equipment |
| KR102620632B1 (en) * | 2020-12-22 | 2024-01-03 | 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. | Magnetron Sputtering Equipment |
| CN113421812A (en) * | 2021-06-23 | 2021-09-21 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and bearing device thereof |
| CN113421812B (en) * | 2021-06-23 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and bearing device thereof |
| WO2024091389A1 (en) * | 2022-10-24 | 2024-05-02 | Lam Research Corporation | Heat flow control in a processing tool |
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