CN106801222B - A kind of chip tray and MOCVD systems - Google Patents
A kind of chip tray and MOCVD systems Download PDFInfo
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- CN106801222B CN106801222B CN201510836832.1A CN201510836832A CN106801222B CN 106801222 B CN106801222 B CN 106801222B CN 201510836832 A CN201510836832 A CN 201510836832A CN 106801222 B CN106801222 B CN 106801222B
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- Prior art keywords
- boss
- tray body
- heating element
- rotary connector
- support shaft
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
Abstract
The present invention provides a kind of chip tray and MOCVD systems.A kind of chip tray, in MOCVD systems, MOCVD systems to include support shaft and heating element, which is characterized in that chip tray includes tray body, the boss for being set to tray body lower surface center and the rotary connector for being connected to boss lower surface；The upper surface of support shaft is provided with pit, and rotary connector is inserted into pit and is matched with pit；Tray body is placed in above heating element, and boss is surround by its adjacent heating element.The present invention is realized when using tray body central support structure, and tray body central temperature can keep basically identical with pallet neighboring area, and temperature uniformity has larger improvement, and chip tray is made to remain to high speed rotation and passes disk automatically convenient for manipulator etc..
Description
Technical field
The present invention relates to MOCVD (Metal-organic Chemical Vapor Deposition, Organometallic Chemistries
Vapor deposition) system regions more particularly to a kind of chip tray and MOCVD systems.
Background technology
At present, MOCVD systems (metal organic chemical vapor deposition system) are used as a kind of typical CVD (Chemical
Vapor Deposition, chemical vapor deposition) equipment, it is capable of providing to grow on chip (such as sapphire epitaxial wafer) surface and use
The conditions such as required temperature, pressure, chemical gas component when luminous crystal structure GaN (gallium nitride).It is set in MOCVD device
There is the reaction chamber of vacuum, be equipped with pallet in reaction chamber, reaction chamber is introduced reaction gases by inlet duct (such as spray head)
It is interior, and be transported to and be placed on the surfaces of multiple chips on pallet and handled, so as to grow specific crystal structure, such as
GaN structures.In a kind of design of the chip tray heating support device of existing MOCVD systems, in order to realize that reaction is equal simultaneously
Even, pallet needs high speed rotation and vacuum to automate and pass disk.Pallet employs the point-supported mode in center, as shown in Figure 1, in this way
Heater strip 11 can not be arranged below 10 central point of pallet, and support shaft 12 is typically all metal material, heat conduction is preferable, by pallet 10
The temperature at center is taken away, and so as to which tray center temperature is less than other parts temperature, causes the temperature singular point of tray center, so this
Chip is not put generally in 10 center of kind design pallet.Existing another kind scheme is as shown in Fig. 2, Fig. 2 is by 20 edge of pallet
Bottom surface connected support structure 21 supports and rotary-tray 20, and 20 centre bottom of pallet can place heater strip 22, in pallet 20
Heart heating can fully ensure that, but realize 20 high speed rotation of pallet and automation by 20 edge bottom surface connected support structure of pallet
It is very difficult to pass disk.In practical applications, the corresponding schemes of Fig. 1 gradually occupy leading position, therefore, how to eliminate in pallet
The problem of temperature singular point of the heart is industry urgent need to resolve.
Invention content
The present invention provides a kind of chip tray and MOCVD systems, for solving tray center temperature less than other parts
Temperature, the problem of causing the temperature singular point of tray center.
The embodiment of the present invention uses following technical scheme：
In a first aspect, the present invention provides a kind of chip tray, in MOCVD systems, the MOCVD systems to include branch
Axis and heating element are supportted, the chip tray includes tray body, the boss for being set to tray body lower surface center and connection
Rotary connector in the boss lower surface；The upper surface of the support shaft is provided with pit, and the rotary connector is inserted into
The pit is simultaneously matched with the pit；The tray body is placed in above the heating element, and the boss is by its neighbour
Nearly heating element is surround.
Preferably, when extension is reacted, the side of the boss receives the heat that the heating element of the neighbouring boss distributes
Amount.
Preferably, the thickness of the boss is greater than or equal to the thickness of one layer of heating element.
Preferably, the lower surface of the boss is parallel with the lower surface of tray body, and at least one layer of heating element
Lower surface is higher than the lower surface of the boss.
Preferably, the tray body upper surface is centrally disposed is useful for placing the recessed disk of epitaxial wafer or the pallet
Body upper surface center is located in the recessed disk for placing epitaxial wafer.
Second aspect, the present invention also provides a kind of MOCVD systems, including chip tray, support shaft and heating element, institute
Chip tray is stated to include tray body, be set to the boss at tray body lower surface center and be connected to the boss lower surface
Rotary connector；The upper surface of the support shaft is provided with pit, the rotary connector be inserted into the pit and with it is described recessed
Hole matches；The tray body is placed in above the heating element, and the boss is surround by its adjacent heating element.
Preferably, when extension is reacted, the side of the boss receives the heat that the heating element of the neighbouring boss distributes
Amount.
Preferably, the heating element of the neighbouring boss is used to heat the tray body.
Preferably, the thickness of the boss is greater than or equal to the thickness of one layer of heating element.
Preferably, the lower surface of the boss is parallel with the lower surface of tray body, and at least one layer of heating element
Lower surface is higher than the lower surface of the boss.
Preferably, the boss and support shaft are surround by more than two layers heating element.
Preferably, the tray body upper surface is centrally disposed is useful for placing the recessed disk of epitaxial wafer or the pallet
Body upper surface center is located in the recessed disk for placing epitaxial wafer.
Preferably, the material of the support shaft is metal, and support shaft side is equipped with groove and/or support shaft is internally provided with sky
Slot.
Compared with prior art, a kind of chip tray provided by the invention and MOCVD systems, have the advantages that：
For tray body other than the heating element that can be set by lower surface upwards heating, boss can be in the present invention
The heat distributed from boss side surfaces absorption heating element, realizes when using tray body central support structure, tray body
Central temperature can keep basically identical with pallet neighboring area, and temperature uniformity has larger improvement, makes tray body center
The epitaxial wafer of bigger can be placed, and chip tray can follow support shaft to rotate, and make for placing epitaxial wafer or pallet
Chip tray remains to high speed rotation and passes disk automatically convenient for manipulator etc..
Description of the drawings
Fig. 1 is the structure diagram one of the prior art of the present invention.
Fig. 2 is the structure diagram two of the prior art of the present invention.
Fig. 3 is a kind of diagrammatic cross-section of one embodiment of chip tray provided by the invention.
Fig. 4 is a kind of second embodiment diagrammatic cross-section of chip tray provided by the invention.
Fig. 5 is a kind of structure diagram of MOCVD system embodiments provided by the invention.
Fig. 6 is the comparative experimental data line chart of MOCVD system embodiments provided by the invention.
Specific embodiment
For make present invention solves the technical problem that, the technical solution that uses and the technique effect that reaches it is clearer, below
The technical solution of the embodiment of the present invention will be described in further detail with reference to attached drawing, it is clear that described embodiment is only
It is part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those skilled in the art exist
All other embodiments obtained under the premise of creative work are not made, shall fall within the protection scope of the present invention.
Fig. 3 is shown according to a kind of structure diagram of chip tray one embodiment provided by the invention.The present embodiment
A kind of chip tray, in MOCVD systems, MOCVD systems include support shaft 12 and heating element 22, and chip tray includes
Tray body 30, the boss 32 for being set to tray body lower surface center and the rotary connector 34 for being connected to boss lower surface；
Tray body 30 is placed in 22 top of heating element, the heat distributed upwards by 30 lower surface of tray body absorption heating element 22
Amount, the upper surface of support shaft 12 are provided with pit, and rotary connector 34 is inserted into the pit and is matched with the pit, so as to fulfill
Support shaft 12 drives, and boss 32 is surround by its (boss 32) adjacent heating element 22 support and rotation of pallet.
Wherein, general tray body 30 uses graphite material, for placing chip when epitaxial wafer is grown.And 32 He of boss
For rotary connector 34 it is also preferred that using graphite material, boss 32 and rotary connector 34 and tray body 30 can be integrated moldings
Entirety, or coordinate, boss 32 can be the shapes such as round platform, cylinder, and the present embodiment do not limit；Rotation connects
Fitting 34 is usually taper.Boss 32 is used as thermal store, and when extension is reacted, 32 side of boss is absorbed around the neighbouring of boss 32
The heat that heating element 22 distributes.To allow boss 32 that can receive suitable heat from side, boss 32 will ensure certain
Thickness, the thickness of usual boss 32 is set greater than or the thickness equal to one layer of heating element.In a kind of preferred realization method
In, the lower surface of boss is parallel with the lower surface of tray body, and the lower surface of at least one layer heating element is higher than the boss
Lower surface, to ensure that boss side surfaces can receive enough heats.In specific application, heating element 22 is usually heater strip
Or heating plate.
Wherein, the reaction chamber of vacuum is equipped in MOCVD systems, chip tray is set in reaction chamber, passes through inlet duct
(such as spray head) is introduced reaction gases into reaction chamber, and is transported at the surface for being placed on multiple chips on pallet
Reason, in order to react uniform when ensureing generation crystal structure, chip tray includes tray body 30, is set to 30 following table of tray body
The boss 32 at face center and the rotary connector 34 for being connected to 32 lower surface of boss；12 upper surfaces of support shaft are provided with pit,
Rotary connector 34 is inserted into the pit and is matched with pit, the support of pallet and rotation is driven so as to fulfill support shaft 12, together
When in order to ensure to generate the temperature needed for crystal structure, then tray body 30 is placed in the top of heating element 22, can not only make to pass through
30 lower surface of tray body absorbs the heat that heating element 22 distributes upwards, and since boss 32 is by its (boss 32) neighbouring heating
Element 22 is surround, and 32 side of boss can also be absorbed into the heat that adjacent heating element 22 distributes, and makes 30 center of tray body
Temperature can keep basically identical with 30 neighboring area of tray body, and temperature uniformity has larger improvement.Therefore, tray body 30
Center (tray body 30 is disc-shape), which can also be used to placement epitaxial wafer or pallet, can place the epitaxial wafer of bigger, from
And tray body upper surface it is centrally disposed be useful for place epitaxial wafer recessed disk or tray body upper surface center be located at be used for
In the recessed disk for placing epitaxial wafer.When motor is when driving 12 high speed rotation of support shaft, support shaft and rotary connector 34 can be passed through
Mutual cooperation, drive entire chip tray high speed rotation.In addition, using this way of contact, energy between pallet and support shaft
Enough manipulator is supported to pass disk automatically.It is to be noted that 32 adjacent heating element 22 of boss can be used for carrying out tray body 30
Heating, i.e., the heat that 32 adjacent heating element 22 of boss distributes to side in addition to boss 32 is passed to, moreover it is possible to be passed up to support
Disk ontology 30.
Fig. 4 is shown according to a kind of structure diagram of second embodiment of chip tray provided by the invention.The present embodiment
In, a kind of chip tray even, in MOCVD systems, MOCVD systems to include support shaft 52 and heating element 62, chip support
Disk includes tray body 40, the boss 42 for being set to tray body lower surface center and the rotatable connection for being connected to boss lower surface
Part 44；Tray body 40 is placed in 62 top of heating element, and absorb heating element 62 by 40 lower surface of tray body distributes upwards
Heat, the upper surface of support shaft 52 is provided with pit 521, rotary connector 44 be inserted into pit 521 and with pit 521 coordinate from
And it realizes support shaft 52 and the support of pallet and rotation is driven.Boss 42 is adjacent to its 62 ring of (boss 42) heating element by it
Around.When motor is when the driving rotation of support shaft 52, can be driven entire by the frictional drive of pit 521 and rotary connector 44
Chip tray high speed rotary motion, in the present embodiment, pit 521 is preferably cone, and rotary connector 44 is also correspondingly circle
Taper.
Wherein, general tray body 40 uses graphite material, for placing chip when epitaxial wafer is grown.And 42 He of boss
For rotary connector 34 it is also preferred that using graphite material, boss 42, rotary connector 44 can be integrally formed with tray body 40
Entirety, or coordinate.Boss 42 can be the shapes such as round platform, cylinder, not limit.Boss 42 is used as heat accumulation
Body absorbs the heat of the adjacent heating element 62 around boss 42.Further, the heat that 42 adjacent heating element 62 of boss distributes
Amount to side in addition to boss 42 is passed to, moreover it is possible to be passed up to tray body 40.Wherein, vacuum is equipped in MOCVD systems
Reaction chamber, chip tray are set in reaction chamber, are introduced reaction gases into reaction chamber by inlet duct (such as spray head),
And be transported to and be placed on the surfaces of multiple chips on pallet and handled, it is provided on pallet multiple for placing the knots of chip
Structure, generally recessed disk.
For heating element 62 preferably using heater strip, the thickness of boss 42 is greater than or equal to the thickness of one layer of heater strip, so that
42 side of boss can absorb the area bigger that heater strip distributes heat, it is ensured that at least one layer of heater strip adds the side of boss 42
Heat.Further, two layers or more than two layers of heater strip may be used near 42 side of boss to surround, so as to make boss 42
It is more abundant to absorb heat, influence of the support shaft heat losses to tray body surface temperature is better balanced.
In an alternative, the lower surface of boss 42 is parallel with the lower surface of tray body, and at least one layer adds
The lower surface of heated filament is higher than 42 bottom surface of boss, and in attached drawing 4, being looped around the heater strip of 42 side of boss (or can also for 3 layers
For 2 layers or more layers), wherein the lower surface for having two layers of heater strip is higher than the bottom surface of boss 42.Further, heater strip can also
Around the upper end of support shaft 52, it is ensured that 42 side of boss can fully receive heat, and then ensure 40 central temperature of tray body
Promotion.But no matter which kind of situation, boss 42 and support shaft 52 are surround by more than two layers heating element, i.e., at least one layer
In the case of the lower surface of heating element (such as heater strip) is higher than the lower surface of boss 42, boss 42 and support shaft 52 nearby or
Adjacent place has two or more layers heating element around boss 42 and support shaft 52.Furthermore it is preferred that, the lower surface of boss 42
Area is more than the upper surface area of rotary connector 44.
In the present embodiment, it can not only make the heat distributed upwards by 40 lower surface of tray body absorption heating element 62,
And the heat that distributes of heating element 62 is absorbed by boss 42, enable 40 center temperature of tray body and tray body 40 weeks
Border region keeps basically identical, and temperature uniformity has larger improvement, and the center of tray body 40 is made to can also be used to place extension
Piece or pallet can place the epitaxial wafer of bigger, that is, tray body center can be provided with to place the recessed of epitaxial wafer
Disk 44 or tray body upper surface center are located in the recessed disk for placing epitaxial wafer.And pallet can be relative to support shaft 52
Rotation, makes chip tray remain to high speed rotation and passes disk automatically convenient for manipulator.
Fig. 4 and Fig. 5 is shown according to a kind of structure diagram of MOCVD system embodiments provided by the invention.
In the present embodiment, MOCVD systems include chip tray, support shaft 52 and heating element 62, wherein chip tray packet
Include tray body 40, the boss 42 for being set to 40 lower surface center of tray body and the rotatable connection for being connected to 42 lower surface of boss
Part 44；The upper surface of support shaft 52 is provided with pit 521, and rotary connector is inserted into pit 521 and is matched with pit 521；Support
Disk ontology 40 is placed in 62 top of heating element, and the boss 42 is surround by its adjacent heating element.Chip tray can be adopted
With the scheme of the embodiment of the scheme of previous embodiment, particularly second.
When extension is reacted, the side of boss 42 receives the heat that the heating element 62 of neighbouring boss 42 distributes.Further
Ground, the heat that 42 adjacent heating element 22 of boss distributes to side in addition to boss 42 is passed to, moreover it is possible to be passed up to pallet sheet
Body 40.
Preferably, support shaft 52 is metal material, since heat dissipation metal is fast, in order to reduce the thermal losses that support shaft is brought,
Groove 522 is equipped in 52 side of support shaft and/or support shaft is internally provided with empty slot 523.
To allow boss 42 that can receive suitable heat from side, boss 42 will ensure certain thickness, usual boss
42 thickness is set greater than or the thickness equal to one layer of heating element.In a kind of preferred realization method, under boss 42
Surface is parallel with the lower surface of tray body 40, is had around boss 42 using one layer or more heater strip 62 at neighbouring boss 42
Plane where the lower surface of at least one layer of heater strip can also surround branch higher than plane where 42 bottom surface of boss, wherein heater strip 62
The top of axis 52 is supportted, for example, in boss 42 and support shaft 52 nearby or adjacent place is provided with two or more layers heating element 62
Around boss 42 and support shaft 52, to transmit heat to the side of boss 42.Ensure that 42 side of boss can fully receive heat,
Ensure the promotion of tray body central temperature.
Further, tray body upper surface center can be provided with to place the recessed disk of epitaxial wafer or pallet sheet
Body upper surface center is located in the recessed disk for placing epitaxial wafer.Due to 40 center temperature of tray body can and tray body
40 neighboring areas keep basically identical, and temperature uniformity has larger improvement, and the center of tray body 40 is made to can also be used to place
Epitaxial wafer or pallet can place the epitaxial wafer of bigger.Support shaft 52 can be driven by driving devices such as motors to be rotated, due to
Using tray body central support structure, when electric drive support shaft 52 rotates, can by the pit 521 on 52 top of support shaft with
The frictional drive of rotary connector 44 drives entire chip tray high speed rotary motion, while in order to ensure to generate crystal structure
Required temperature, not only tray body lower surface surrounded by heating element 62, and by the way that boss 42 is surround by heating element 62
So that boss 42 absorbs the heat that heating element 62 distributes from side, enable tray body central temperature and tray body week
Border region keeps basically identical, and temperature uniformity has larger improvement.
As shown in fig. 6, sequence 1 is underlying curve, sequence 2 is the curve being located above.Sequence 1 discloses existing
The radial distribution of temperature on technology pallet 10, i.e., from the center of circle to the distribution of circumferencial direction.Horizontal axis using 0-100 represent it is opposite away from
From pallet radial distance 0 represents the center of circle of tray body, and pallet radial distance 90 represents that effectively working region is peripheral on pallet 10
Relative distance apart from the center of circle, effective working region refer to temperature difference everywhere is smaller, difference fall substantially in a certain range (such as
± 5 DEG C) 10 region of pallet.When extension is reacted, epitaxial wafer is normally placed in effective working region to obtain higher extension
Quality.Sequence 2 obtains effect for the present embodiment, and displays temperature uniformity is greatly improved compared with the prior art, 40 center of tray body
The temperature in region and neighboring area are unanimous on the whole, and 40 central area of tray body can also be used to place epitaxial wafer or pallet sheet
Body 40 can place the epitaxial wafer of bigger.
In conclusion a kind of chip tray of the present invention and MOCVD systems, this hair is realized using tray body center
During support construction, tray body central temperature can keep basically identical with pallet neighboring area, and temperature uniformity has larger change
It is kind, allow that tray body center can also be used to place epitaxial wafer or pallet places the epitaxial wafer of bigger, and make chip support
Disk remains to high speed rotation and passes disk automatically convenient for manipulator etc..
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (5)
1. a kind of chip tray, in MOCVD systems, the MOCVD systems to include support shaft and heating element, feature exists
In the chip tray includes tray body, is set to the boss at tray body lower surface center and is connected under the boss
The rotary connector on surface；As the bindiny mechanism between the tray body and the rotary connector, the boss and institute
It states tray body and/or the rotary connector is integrated and is process or the boss and the tray body and described
Rotary connector is formed for 3 mutual independent Standards；The tray body is placed in above the heating element, and described
Boss is surround by its adjacent heating element；
The lower surface of at least one layer heating element is higher than the lower surface of the boss；When extension is reacted, the side of the boss
Receive the heat that the heating element of the neighbouring boss distributes；
The thickness of the boss is greater than or equal to the thickness of one layer of heating element；
The lower surface area of the boss is more than the upper surface area of the rotary connector；
The lower surface of the boss is parallel with the lower surface of tray body；
The rotary connector is pyramidal structure, and the upper surface of the support shaft is provided with pit, and the rotary connector is inserted into
The pit is simultaneously matched with the pit, and the rotary connector coordinates with the support shaft；The tray body is placed in institute
It states above heating element, for carrying by heating chip；
In centrally disposed recessed disk or the tray body upper surface for being useful for placing epitaxial wafer in the tray body upper surface
The heart is located in the recessed disk for placing epitaxial wafer.
2. a kind of MOCVD systems, including chip tray, support shaft and heating element, which is characterized in that the chip tray includes
Tray body, the boss for being set to tray body lower surface center and the rotary connector for being connected to the boss lower surface；Make
For the bindiny mechanism between the tray body and the rotary connector, the boss and the tray body and/or described
Rotary connector be integrated be process or the boss and the tray body and the rotary connector for 3 mutually
Independent Standard forms；The tray body is placed in above the heating element, and the boss by it adjacent to heating unit
Part is surround；
The lower surface of at least one layer heating element is higher than the lower surface of the boss, when extension is reacted, the side of the boss
Receive the heat that the heating element of the neighbouring boss distributes；
The thickness of the boss is greater than or equal to the thickness of one layer of heating element；
The lower surface area of the boss is more than the upper surface area of the rotary connector；
The lower surface of the boss is parallel with the lower surface of tray body；
The rotary connector is pyramidal structure, and the upper surface of the support shaft is provided with pit, and the rotary connector is inserted into
The pit is simultaneously matched with the pit；The tray body is placed in above the heating element, brilliant by heating for carrying
Piece；
In centrally disposed recessed disk or the tray body upper surface for being useful for placing epitaxial wafer in the tray body upper surface
The heart is located in the recessed disk for placing epitaxial wafer.
3. MOCVD systems as claimed in claim 2, which is characterized in that the heating element of the neighbouring boss for pair
The tray body is heated.
4. MOCVD systems as claimed in claim 2, which is characterized in that the boss and support shaft are by more than two layers heating unit
Part is surround.
5. MOCVD systems as claimed in claim 2, which is characterized in that the material of the support shaft be metal, support shaft side
Empty slot is internally provided with equipped with groove and/or support shaft.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510836832.1A CN106801222B (en) | 2015-11-26 | 2015-11-26 | A kind of chip tray and MOCVD systems |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510836832.1A CN106801222B (en) | 2015-11-26 | 2015-11-26 | A kind of chip tray and MOCVD systems |
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| Publication Number | Publication Date |
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| CN106801222A CN106801222A (en) | 2017-06-06 |
| CN106801222B true CN106801222B (en) | 2018-06-19 |
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| CN110512191B (en) * | 2019-07-12 | 2021-05-14 | 郑州磨料磨具磨削研究所有限公司 | Tool and method for determining tray structure for MPCVD device |
| CN114016003B (en) * | 2021-10-22 | 2024-01-09 | 宁波沁圆科技有限公司 | Reaction chamber of chemical vapor deposition device and chemical vapor deposition device |
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|---|---|---|---|---|
| US6902623B2 (en) * | 2001-06-07 | 2005-06-07 | Veeco Instruments Inc. | Reactor having a movable shutter |
| CN101922042B (en) * | 2010-08-19 | 2012-05-30 | 江苏中晟半导体设备有限公司 | Epitaxial wafer tray and support and rotation connecting device matched with same |
| CN103811246B (en) * | 2012-11-14 | 2016-08-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Heater and plasma processing device |
| CN103526186B (en) * | 2013-07-31 | 2016-05-18 | 中国电子科技集团公司第四十八研究所 | A kind of chip carrying disk for MOCVD reactor and MOCVD reactor |
-
2015
- 2015-11-26 CN CN201510836832.1A patent/CN106801222B/en active Active
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| Publication number | Publication date |
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| CN106801222A (en) | 2017-06-06 |
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