CN106794983A - 传感器 - Google Patents
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- CN106794983A CN106794983A CN201580045554.6A CN201580045554A CN106794983A CN 106794983 A CN106794983 A CN 106794983A CN 201580045554 A CN201580045554 A CN 201580045554A CN 106794983 A CN106794983 A CN 106794983A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 9
- 238000004088 simulation Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 2
- 238000009434 installation Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/0023—Packaging together an electronic processing unit die and a micromechanical structure die
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- B81B7/008—MEMS characterised by an electronic circuit specially adapted for controlling or driving the same
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
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- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
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- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
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- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
- B81B2207/012—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being separate parts in the same package
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
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- B81C2201/0128—Processes for removing material
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- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L2009/0066—Mounting arrangements of diaphragm transducers; Details thereof, e.g. electromagnetic shielding means
- G01L2009/0069—Mounting arrangements of diaphragm transducers; Details thereof, e.g. electromagnetic shielding means the transducer being mounted on a flexible element
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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Abstract
本发明涉及一种传感器(2、2'、2"),其具有设置在功能体积(3)内的电子芯片(4、4'、4")和传感器芯片(5、5'、5"),所述功能体积最多4mm至5mm长、最多2mm至3mm宽并且最多0.5mm至0.8mm高,其解决如下任务,即,给出一种紧凑的传感器。
Description
技术领域
本发明涉及一种传感器。
背景技术
由DE 10 2010 044 616 A1已知一种用于滤芯的微***。
由DE 10 2009 040 707 A1已经已知过滤元件,其中,传感器配置给过滤介质。
在已知的过滤元件中不利的是,传感器经常相对大地构成,以便检测和评估一个或多个物理的参量。这样的过滤元件的制造相对昂贵。此外,较大的传感器难以在过滤元件上装配。
尤其是10-500Pa的范围中的非常小的压差的检测在现有技术中只以相对大的传感器可能实现并且要求许多结构空间。
此外将这样相对大的传感器连接到过滤元件上相当困难并且昂贵。此外,这样的传感器的触点接通经常通过线缆进行。后者特别是不值得做,因为线缆的维护是烦琐的并且不被最终顾客接受。
发明内容
因此本发明的任务是,给出一种紧凑的传感器。
按照本发明,前述任务利用权利要求1的特征解决。
按照本发明首先认识到,存在用于检测10-500Pa的范围中的最小的压差的传感器的小型化的需求。
在此认识到,小型化和优选无线的不可插接的能量供应能够实现,低成本地集成传感器。集成和优选无线的不可插接的能量和数据传输此外不要求附加的安装耗费。
按照本发明具体来说认识到,具有这样小的功能体积的传感器可特别容易地装配。此外如果功能体积这样小地选择,可以节省材料。
因此解决开头所述的任务。
可以利用180nm工艺,以便在传感器芯片上设置电子装置和膜片。这允许传感器芯片和借此功能体积的紧凑的构造。
在功能体积内可以设置多个电子芯片和/或多个传感器芯片。由此可检测多个物理的参量。
电子芯片可以具有多个模拟的和/或数字的接口,利用所述接口可评估不同的传感器芯片。由此可以将唯一的电子芯片与不同的传感器或传感器芯片组合。
借助电子芯片和/或传感器芯片,通过无线电接口、尤其是RFID接口,或通过触点的不可插接的连接的无线的能量和/或数据传输可能是可实现的或可进行的。由此耗费的线缆敷设不再需要。
带有转换元件的传感器芯片和/或带有转换元件和传感器前端的传感器芯片可以整体上以180nmCMOS工艺制造,尤其是用于以5Pa的分辨率检测在10-500Pa的范围中的压差。由此压力精确并且有效率地可被测量。
在这种背景下,转换元件可以作为硅膜片上的晶体管或电阻设计。由此给出非常可靠的布置结构。
电子芯片和传感器芯片可以并排设置在电路板上。由此实现非常扁平的构造。
电子芯片和传感器芯片可以通过接合线相互导电连接。电子芯片和传感器芯片可以这样非常紧密地并列放置。接合线的使用允许简单的制造,因为接合线在芯片的背离电路板的侧上安装。
电子芯片和传感器芯片可以通过倒装芯片连接在使用触点接通小丘、即所谓的“突起”的情况下相互导电连接。该触点接通在如下情况合适,即,设置在硅基底上的电设备、即尤其是氧化层朝向电路板并且硅基体的纯的硅侧背离电路板。
传感器芯片可以具有膜片和电子的设备。传感器芯片可以由硅基底制成,电子装置设置在所述硅基底上和/或中。传感器芯片可以这样非常紧凑地构造。甚至可设想,膜片只包括一个硅基底和至少一个或多个转换元件。转换元件优选是掺杂的区域。
在该背景下,传感器芯片可以具有硅基底,膜片蚀刻到所述硅基底中,所述膜片除去转换元件没有电子设备和/或氧化层。所述转换元件优选作为n或p掺杂的区域在膜片上和/或在膜片中设计。通过膜片的蚀刻同样产生传感器芯片的紧凑的构造,因为内在地在硅基底中存在的材料用作为膜片。膜片因此作为硅膜片设计。
具有大约10μm的厚度电子装置或氧化层可能被腐蚀掉直到达到硅基底,其中,在另一侧直至500μm的深度腐蚀到硅基底中,以便提供膜片。
电子芯片和传感器芯片可以设置在电路板上,在所述电路板中构成通道,其中,所述通道是至如下体积的唯一的导流的入口,所述体积由电路板、传感器芯片和围绕传感器芯片的密封圈形成或密封地限定,其中,膜片的第一膜片面朝向所述体积。与第一膜片面相对置的第二膜片面朝向大气或其他与所述体积流体密封地分开的空间。由此传感器芯片可以测量压差,如果不同的压力作用到两个膜片面上的话。
功能体积在该文献的词义中只通过电子芯片和传感器芯片分别沿x、y和z方向的延伸的和形成。接合线、触点接通小丘和/或密封圈的部分对功能体积没有贡献或不对其进行放大。尤其是接合线、触点接通小丘和密封圈的部分可以超过所述功能体积伸出。密封圈的设置在电子芯片和传感器芯片之间的部分在功能体积沿x、y或z方向的总延伸长度中保持不被考虑。决定性的只是电子芯片和传感器芯片本身在相应的方向上的尺寸。在图4中示例性地标绘延伸长度x和z的计算或检测。
传感器芯片可以在该背景下具有5Pa的分辨率。传感器芯片可以具有处于1Pa至小于5Pa的范围中的分辨率。传感器芯片可以具有处于大于5Pa直至10Pa的范围中的分辨率。
为了评估传感器数据,需要将传感器连接到仪器电子装置上。该连接通常通过线缆进行。
附图说明
在附图中示出
图1示出传感器的示意视图,其中,传感器只具有两个芯片,即电子芯片和传感器芯片,所述两个芯片相互连接,并且确定功能体积;
图2示出传感器芯片的示意视图以及
图3示出电子芯片的示意视图;
图4示出传感器芯片和电子芯片的示意视图,所述传感器芯片和电子芯片通过接合线相互连接,其中,在传感器芯片的硅基底上的氧化层或其他电子的设备背离电路板;
图5示出传感器芯片和电子芯片的示意视图,所述传感器芯片和电子芯片通过触点接通小丘与电路板连接并且相互导电连接,其中,在传感器芯片的硅基底上的氧化层或其他电子的设备朝向电路板;以及
图6示出传感器芯片从上面看的示意的透明视图,所述传感器芯片设置在电路板上,其中,多个触点接通小丘包围膜片地设置。
具体实施方式
图1示出,传感器2具有设置在功能体积3内的至少一个电子芯片4和至少一个传感器芯片5,所述功能体积最多4mm至5mm长、最多2mm至3mm宽并且最多0.5mm至0.8mm高。
距离x为5mm,距离y为3mm并且距离z为0.8mm。
电子芯片4具有多个模拟的和/或数字的接口,利用所述接口可评估不同的传感器芯片。
借助电子芯片4和传感器芯片5进行无线的能量和/或数据传输。这可以通过无线电接口或通过触点的不可插接的连接进行。
电子芯片4和传感器芯片5设置在电路板6上,所述电路板具有比功能体积3大的基面。
传感器芯片5具有5Pa的分辨率。
图2在示意视图中示出传感器芯片5。传感器芯片5能够实现在10-500Pa的范围中的压差的探测。传感器芯片5可以只由将压力变化转换成电的信号的转换元件10构成,或由转换元件10连同传感器前端11组成。
带有转换元件10的传感器芯片5和/或带有转换元件10和传感器前端11的传感器芯片5整体上以180nm的CMOS工艺制造。
传感器前端11可以具有电子装置或设计为电子装置。
转换元件10可以设计为晶体管或设计为在硅膜片上的电阻。
图3示出电子芯片4的示意视图。电子芯片4具有模拟的和/或数字的接口,以用于连接到其他的传感器12或其他的传感器芯片上。电子芯片4具有传感器前端13。电子芯片4具有用于信号处理部14的微控制器。电子芯片4具有存储器15。电子芯片4具有RFID前端16,以用于无接触的馈给和/或用于通过接触连接的馈给。
图4借助另一个传感器2'示出:电子芯片4'和传感器芯片5'并排地在电路板6'上设置。电子芯片4'和传感器芯片5'通过接合线17相互导电连接。
图5借助另一个传感器2"示出:电子芯片4"和传感器芯片5"通过倒装芯片连接在使用触点接通小丘18、即所谓的“突起”的情况下相互导电连接。
不仅在图4而且在图5中,传感器芯片5'、5"具有膜片19'、19"和电子设备20'、20",所述电子设备可以具有氧化层。传感器芯片5'、5"分别具有硅基底21'、21",膜片19'、19"蚀刻到所述硅基底中,所述膜片除去转换元件10'、10"没有电子设备或氧化层。
电子芯片4'、4"和传感器芯片5'、5"设置在电路板6'、6"上,通道6'a、6"a构成在所述电路板中,其中,通道6'a、6"a是至如下体积22'、22"的唯一的导流的入口,所述体积由电路板6'、6"、传感器芯片5'、5"和围绕传感器芯片5'、5"的密封圈23'、23"形成,其中,膜片19'、19"的第一膜片面19'a、19"a朝向所述体积22'、22"。
电子芯片4'、4"被粘接。电子芯片4'、4"同样具有电子设备20'、20"。所述体积22'、22"只由电路板6'、6"、传感器芯片5'、5"和围绕传感器芯片5'、5"的密封圈23'、23"密封。
不同的压力p1和p2在膜片19'、19"的两个不同的侧上主导。如果两个侧彼此密封地分开并且传感器2'、2"适合地设置并且密封地支承,利用传感器2'、2"可以测量在各侧之间的压差。这通过虚线示意性地示出。
密封圈23'、23"优选由浇铸材料制成,所述浇铸材料也可以密封地流入小的间隙中。
图6在透明的视图中示出:触点接通小丘18包围膜片19"。触点接通小丘18必须这样精确地安装,使得传感器芯片5"或膜片19"均匀地以机械的应力加载。
在传感器芯片5、5'、5"和电子芯片4、4'、4"之间的接口可以处于功能体积3中。
Claims (16)
1.传感器(2、2'、2"),其具有设置在功能体积(3)内的电子芯片(4、4'、4")和传感器芯片(5、5'、5"),所述功能体积最多4mm至5mm长、最多2mm至3mm宽并且最多0.5mm至0.8mm高。
2.按照权利要求1所述的传感器,其特征在于,在功能体积(3)内设置有多个电子芯片(4、4'、4")和/或多个传感器芯片(5、5'、5")。
3.按照权利要求1或2所述的传感器,其特征在于,电子芯片(4、4'、4")具有多个模拟的和/或数字的接口,利用所述接口可评估不同的传感器芯片。
4.按照上述权利要求之一所述的传感器,其特征在于,借助电子芯片(4、4'、4")和/或传感器芯片(5、5'、5")进行通过无线电接口或通过触点的不可插接连接的无线的能量和/或数据传输。
5.按照上述权利要求之一所述的传感器,其特征在于,带有转换元件(10、10'、10")的传感器芯片(5、5'、5")和/或带有转换元件(10)和传感器前端(11)的传感器芯片(5)整体上以180nm的CMOS工艺制造。
6.按照上一权利要求所述的传感器,其特征在于,转换元件(10)构造为在硅膜片上的晶体管或电阻。
7.按照上述权利要求之一所述的传感器,其特征在于,利用所述传感器芯片(5、5'、5")可测量在10-500Pa范围中的压差。
8.按照上一权利要求所述的传感器,其特征在于,传感器芯片(5、5'、5")具有5Pa的分辨率。
9.按照权利要求7所述的传感器,其特征在于,传感器芯片(5、5'、5")具有处于1Pa至小于5Pa范围中的分辨率。
10.按照权利要求7所述的传感器,其特征在于,传感器芯片(5、5'、5")具有处于大于5Pa直至10Pa的范围中的分辨率。
11.按照上述权利要求之一所述的传感器,其特征在于,电子芯片(4、4'、4")和传感器芯片(5、5'、5")并排地设置在一个电路板(6、6'、6")上。
12.按照上述权利要求之一所述的传感器,其特征在于,电子芯片(4、4')和传感器芯片(5、5')通过接合线(17)相互导电连接。
13.按照权利要求1至11之一所述的传感器,其特征在于,电子芯片(4")和传感器芯片(5")通过倒装芯片连接在使用触点接通小丘(18)的情况下相互导电连接。
14.按照上述权利要求之一所述的传感器,其特征在于,传感器芯片(5、5'、5")具有膜片(19'、19")和电子设备(20'、20")。
15.按照上述权利要求之一所述的传感器,其特征在于,传感器芯片(5'、5")具有硅基底(21'、21"),膜片(19'、19")蚀刻到所述硅基底中,所述膜片除去转换元件(10'、10")没有电子设备和/或氧化层。
16.按照上述权利要求之一所述的传感器,其特征在于,电子芯片(4、4'、4")和传感器芯片(5、5'、5")设置在一个电路板(6、6'、6")上,在所述电路板中构成通道(6'a、6"a),其中,所述通道(6'a、6"a)是至如下体积(22'、22")的唯一的导流入口,所述体积由电路板(6、6'、6")、传感器芯片(5、5'、5")和围绕传感器芯片(5、5'、5")的密封圈(23'、23")形成,其中,膜片(19'、19")的第一膜片面(19'a、19"a)朝向所述体积(22'、22")。
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EP3769833B1 (de) | 2019-07-24 | 2022-04-20 | Carl Freudenberg KG | Filterelement mit funktionsraum und filteranordnung mit solchem filterelement und verfahren zur steuerung eines filtersystems |
DE102019128218B4 (de) * | 2019-10-18 | 2022-10-20 | Klinkau Gmbh + Co. Kg | Filterpressensystem und Filterplatte |
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KR20170039700A (ko) | 2017-04-11 |
US9863829B2 (en) | 2018-01-09 |
CA2956864A1 (en) | 2016-02-04 |
US20170217763A1 (en) | 2017-08-03 |
WO2016016078A1 (de) | 2016-02-04 |
CN106796151A (zh) | 2017-05-31 |
JP2017528701A (ja) | 2017-09-28 |
CA2956867C (en) | 2020-07-28 |
JP2017525956A (ja) | 2017-09-07 |
EP3174826A1 (de) | 2017-06-07 |
EP3174617A1 (de) | 2017-06-07 |
WO2016016085A1 (de) | 2016-02-04 |
RU2665341C1 (ru) | 2018-08-29 |
CA2956867A1 (en) | 2016-02-04 |
US10189701B2 (en) | 2019-01-29 |
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US20170219448A1 (en) | 2017-08-03 |
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