CN106788366B - A kind of voltage equalizing protection circuit for series IGBT - Google Patents
A kind of voltage equalizing protection circuit for series IGBT Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
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Abstract
The invention discloses a kind of voltage equalizing protection circuits for series IGBT, including voltage acquisition module, the i-th comparator, control module and grid resistance module；Wherein, i is the arbitrary integer of 1~N, and N is natural number；I-th output end of the voltage acquisition module connects the i-th comparator; i-th input terminal of the first output end connection grid resistance module of i-th comparator; the input terminal of the second output terminal link control module of first comparator; the N+1 input terminal of the output end connection grid resistance module of the control module, output end of the output end of the grid resistance module as the voltage equalizing protection circuit.The present invention utilizes given threshold, and square-wave signal is obtained according to collection emitter voltage signal, to change the size of grid resistance, the climbing speed of adjustable collection emitter voltage, reduce crest voltage, it is inhibited simultaneously because signal transmitting route stray parameter difference bring over-voltage influences, it can be to avoid excessive pressure damages risk of the IGBT in the current off-phases of tandem working and entire duty cycle.
Description
Technical field
The invention belongs to field of power electronics, more particularly, to a kind of voltage equalizing protection circuit for series IGBT.
Background technique
By consolidating for insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) composition
State electronic power switch has switching speed fast, and controllability is strong, the feature of service life length, while in order to be applied to high voltage field,
Multiple IGBT must be serially connected using to reach higher voltage class, program effect is good while at low cost, therefore obtains
Extensive concern and application.
When IGBT is used in series, due to the parasitic inductance etc. of nuance and route between each semiconductor devices
It influences, will lead to that each device pressure-bearing in switching process is unbalanced, the strong influence service life and working efficiency of switch, very
It is damaged to will cause device breakdown.Guarantee that voltage's distribiuting equilibrium of the semiconductor devices in switching process is to realize high-voltage solid-state electricity
The key of power electronic switch.
To this prior art, there are many solutions: first method is to realize more essence using feedback control at driving end
True device voltage dynamic adjusts, and the collection emitter voltage of each IGBT is made to reach unanimity, however structure is complicated for the circuit, if its
The road Zhong Mou controller failure Ze Gai road IGBT is necessarily damaged, and as devices in series number increases, controls complexity also substantially
It is promoted；Second method is to carry out inductance present in absorption circuit in power end parallel connection dynamic buffer circuit, static state voltage equipoise circuit
Energy slows down quiescent voltage caused by semiconductor devices due to leakage current difference by static state voltage equipoise circuit to avoid overvoltage
Unbalanced problem, the program increase with Tandem devices number, will increase the volume of whole device；Simultaneously as dynamic buffering
Circuit is passive device, reduction device peak voltage that can only be more rough, and can all be acted in the entire duty cycle
To bring biggish loss.
Therefore, unbalanced by the combination solution serial semiconductor voltage of two schemes in current high-pressure solid-state switch field
Problem, such as non-patent literature " IEEE Transactions on Power Electronics ", 2015,30 (8): 4165-
A kind of method of active voltage balance that series IGBT is realized using feedback control is disclosed in 4174.Utilize this method, dynamic
Buffer circuit uses resistance-capacitance scheme, and static state voltage equipoise circuit uses resistor proposal, and drive feedback control is using series connection transient state pincers
Position diode (TVS), since transient state clamp diode can puncture under certain voltage, when IGBT shutdown, by detecting transient state
Electric current in clamp diode, it can be determined that each IGBT boosts to the time of certain setting collection emitter voltage when series connection, by the letter
Breath is sent to controller by optical fiber in the relative delay of each road IGBT switching signal of next period modulation.
One, in this scenario, the transient state clamp diode of same size, there are larger differences for operation voltage, in addition,
The same transient state clamp diode, operation voltage can also be brought with its temperature change, therefore using transient state clamp diode
Great feedback error, and the general high voltage IGBT turn-off time in 1us~2us or so, the error will greatly affect control effect
Fruit even causes IGBT excessive pressure damages instead；Secondly, to avoid transient state clamp diode from damaging because frequently puncturing, be generally all provided with
115%~120% that operation voltage is IGBT real work voltage is set, then the transient state that there will be certain IGBT clamps two poles
Pipe because voltage's distribiuting is irregular do not puncture the case where, will also result in feedback error.Thirdly, in this scenario, use transient state pincers
Position diode comes switching capacitance, resistance, and the electric current of feed-in IGBT control terminal is smaller to be made function and effect there are larger delays, and
There is also operation voltage shakiness problems above-mentioned.
Summary of the invention
In view of the drawbacks of the prior art, the purpose of the present invention is to provide a kind of voltage equalizing protection electricity for series IGBT
Road, it is intended to solve the problems, such as that IGBT is pressed and overvoltage protection in tandem working in the prior art.
The present invention provides a kind of voltage equalizing protection circuits for series IGBT, including voltage acquisition module, N number of comparison
Device, control module and grid resistance module；N number of comparator be respectively first comparator, the second comparator ... to N
Comparator, N are natural number；
I-th output end of the voltage acquisition module connects the i-th comparator, and the first output end of i-th comparator connects
Connect the i-th input terminal of grid resistance module, the input terminal of the second output terminal link control module of first comparator, the control
The N+1 input terminal of the output end connection grid resistance module of module, the output end of the grid resistance module is as described equal
The output end of voltage protection circuit, i are the integer of 1~N；
The voltage acquisition module is for obtaining low voltage signal corresponding with emitter voltage signal is collected；
I-th comparator is used to believe the low-voltage by being compared with the i-th threshold value the low voltage signal
The i-th square-wave signal number is converted to, i-th threshold value is less than the peak value of the low voltage signal；
The control module is used to issue driving signal according to the first square-wave signal；
The grid resistance module is used to change whole resistance value, and obtain according to the i-th control signal and driving signal
The grid for obtaining IGBT penetrate collecting voltage signal.
Preferably, the delay of i-th comparator is less than 20ns.
Preferably, the ripple amplitude of i-th threshold value is lower than 100mv.
Preferably, N >=2, and first threshold is incremented by successively to N threshold value.
As it is further preferred that N=2, the first threshold is the 1/3~2/5 of the peak value of low voltage signal, described the
Two threshold values are the 2/3~4/5 of the peak value of low voltage signal.
Preferably, the control module includes control unit, isolated location and driving unit, the isolated location it is defeated
Enter input terminal of the end as the control module, interaction end connects the interaction end of control unit, and output end connects driving unit
Input terminal, output end of the output end of the driving unit as the control module；
Described control unit is used to issue unipolarity, the driving signal of low amplitude value, the isolation according to the first square-wave signal
Unit is used to that control unit and first comparator to be isolated, and for control unit and drive module, the drive module to be isolated
For the driving signal according to the unipolarity, low amplitude value, bipolarity, the driving signal of amplitude are obtained.
As it is further preferred that the isolated location includes the first optical fiber receiver-transmitter module and second connected with optical fiber
Optical fiber receiver-transmitter module, input terminal of the input terminal of first optical fiber receiver-transmitter module as the isolated location, output end conduct
The output end of the isolated location, interaction end of the interaction end of second optical fiber receiver-transmitter module as the isolated location.
Preferably, the voltage acquisition module includes equalizing resistance, sampling resistor and voltage acquisition unit, described to press
The first end of resistance is used to connect the first end of IGBT, and second end connects the first end and voltage acquisition mould of the sampling resistor
The first input end of block, the second input terminal of the second end connection voltage acquisition module of the sampling resistor, and for connecting
The second end of IGBT；
The equalizing resistance is used to adjust the quiescent voltage of IGBT, and the sampling resistor is for obtaining collection emitter voltage letter
Number, the voltage acquisition unit is converted to low voltage signal for that will collect emitter voltage signal.
As it is further preferred that the delay of the voltage acquisition unit is less than 150ns.
As it is further preferred that the temperature drift of the equalizing resistance and sampling resistor is less than 150ppm/ DEG C.
Preferably, the peak value of the collection emitter voltage signal is less than 10V, and the peak value of the low voltage signal is 5V.
Preferably, the grid resistance module includes that basic resistance, N number of driver, N number of resistance and N number of semiconductor are opened
Close, N number of driver be respectively the first driver, the second driver ... to N driver, N number of resistance is respectively the
One resistance, second resistance ... to N resistance, N number of semiconductor switch is respectively the first semiconductor switch, the second semiconductor
Switch ... to N semiconductor switch, i-th resistance connects to form the i-th series circuit with the i-th semiconductor switch, and described i-th
Series circuit is in parallel with basic resistance；The resistance value of i-th resistance is less than basic resistance；The input terminal of i-th driver is made
For the i-th input terminal of the grid resistance module, output end connects the control terminal of the i-th semiconductor switch, the basic resistance
N+1 input terminal of the input terminal as the grid resistance module, output end of the output end as the grid resistance module；
I-th driver is used to obtain the i-th control signal according to the i-th square-wave signal, and i-th semiconductor switch is used
According to the i-th control signal, conducting or the i-th series circuit of disjunction, hindered to change the whole of the grid resistance module
Value.
As it is further preferred that the delay of i-th driver is less than 20ns.
As it is further preferred that N >=2, and the resistance value of first resistor to N resistance is incremented by successively.
As it is further preferred that N=2, the resistance value of the first resistor is the 1/4~1/2 of second resistance, described the
The resistance value of two resistance is the 1/6~1/3 of basic resistance.
Scheme proposed by the present invention has the advantages that
1, the present invention obtains square-wave signal using the i-th threshold value set, and according to collection emitter voltage signal, to change
The size of grid resistance, can increase or slow down the climbing speed of collection emitter voltage, while reduce the peak value of collection emitter voltage,
Inhibiting the transmitting route stray parameter difference bring over-voltage because of collection emitter voltage signal influences, and can exist to avoid series IGBT
Excessive pressure damages risk in the current off-phases that work and entire duty cycle；
2, since the low voltage signal of voltage acquisition module is corresponding with the collection emitter voltage of IGBT, and the i-th comparator is dynamic
Peak value × setting series IGBT crest voltage of the i-th threshold value ÷ low voltage signal is equivalent to as voltage, and the peak value of IGBT is electric
Pressure is typically set at the 110%~140% of its practical operating voltage；It is verified, it, can be with by the way that the threshold voltage of comparator is arranged
Change its operation voltage in the peak ranges for being less than low voltage signal, the operation voltage of comparator is adjusted to series IGBT
Operating voltage 24%~115%, range is extremely wide and easy to adjust；
3, in grid resistance module, semiconductor switch is selected to carry out the i-th resistance of switching, to guarantee quickly to change grid electricity
Hinder the whole resistance value of module；
4, in voltage acquisition module, equalizing resistance can play the role of adjusting quiescent voltage, and sampling resistor can be made
For the collection point for collecting emitter voltage signal, equalizing resistance is in parallel with IGBT again after being connected in series with sampling resistor, thus as IGBT
Static state voltage equipoise circuit arrangement, number of elements is few, save device installation space；
5, the collection emitter voltage signal that sampling resistor obtains, it is directly proportional to the collection actual value of emitter voltage；And pass through selection
Equalizing resistance of the temperature drift less than 150ppm/ DEG C and sampling resistor series connection are used as static voltage sharing, can reduce temperature to adopting
The influence of sample result improves the accuracy of collection emitter voltage signal acquisition；It is lower than the i-th threshold of 100mv by selection ripple amplitude
It is worth the reference voltage as the i-th comparator, the accuracy of comparator operation voltage can be improved；Therefore to sum up, accurate sampling electricity
It presses and accurately threshold value can obtain stable and accurate collection emitter voltage signal；
6, the high speed device that voltage acquisition unit, comparator and driver select delay to be less than 150ns and 20ns respectively,
The crest voltage of series IGBT can quickly be reduced.
Detailed description of the invention
Fig. 1 is voltage equalizing protection electrical block diagram of the present invention；
Fig. 2 is grid resistance modular structure schematic diagram of the present invention；
Fig. 3 is 1 voltage equalizing protection electrical block diagram of the embodiment of the present invention；
Fig. 4 is 1 circuit diagram of the embodiment of the present invention；
In all the appended drawings, identical appended drawing reference is used to denote the same element or structure, in which: 1- driving circuit,
2- control circuit, Q1- series IGBT, R4- equalizing resistance, R3- sampling resistor, U1- voltage acquisition module, U2- comparison module,
U3- drive module, U6- control module.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
The present invention provides a kind of voltage equalizing protection circuits for series IGBT, for being obtained according to collection emitter voltage signal
Grid penetrate collecting voltage signal, as shown in Figure 1, including voltage acquisition module, N number of comparator, isolated location, control unit, driving list
Member and grid resistance module, N number of comparator be respectively first comparator, the second comparator ... to N comparator, N is
Natural number, preferably 1~3, as shown in Figure 1；The output end of the voltage acquisition module connects the i-th comparator, and described i-th compares
I-th input terminal of the first output end connection grid resistance module of device, the second output terminal of first comparator connect isolated location
Input terminal, the isolated location interaction end connection control unit interaction end, output end connect driving unit input terminal,
The N+1 input terminal of the output end connection grid resistance module of the driving unit, the output end of the grid resistance module are made
For the output end of the voltage equalizing protection circuit, i is the arbitrary integer of 1~N；
The voltage acquisition module is for obtaining low voltage signal corresponding with emitter voltage signal is collected, the collection emitter-base bandgap grading electricity
The peak value of signal is pressed to be less than 10V, the peak value of the low voltage signal is 5V；
I-th comparator is used to believe the low-voltage by being compared with the i-th threshold value the low voltage signal
The i-th square-wave signal number is converted to, i-th threshold value is less than the peak value of the low voltage signal, when low voltage signal is greater than the i-th threshold
When value, then the high level in the i-th square-wave signal is converted to, is otherwise converted to the low level in the i-th square-wave signal；As N >=2,
First threshold is incremented by successively to N threshold value；
The isolated location include with optical fiber be connected the first fiber optical transceiver and the second fiber optical transceiver, described first
Input terminal of the input terminal of fiber optical transceiver as isolated location, output end of the output end as isolated location, second light
Interaction end of second interaction end of fine transceiver as the isolated location；The isolated location is used for control unit and first
Comparator and driving unit isolation；
Described control unit is used to issue unipolarity, the driving signal of low amplitude value, the usual drive according to the first square-wave signal
The low level of dynamic signal is 0V, and high level is 3.3V or 5V；
Unipolarity, the driving signal of low amplitude value are converted to bipolarity, the driving signal of amplitude by the driving unit, are led to
The low level of the normal driving signal is -10V, high level 15V, and the driving unit is also used to isolated gate resistive mode simultaneously
Block and isolated location；
The voltage acquisition module is made of equalizing resistance, sampling resistor and voltage acquisition unit；The equalizing resistance
First end be used to connect the first end of IGBT, the second end of the sampling resistor is used to connect the second end of IGBT；It is described equal
The second end of piezoresistance connects the first end of the sampling resistor and the first end of voltage acquisition module, the sampling resistor
The second end of second end connection voltage acquisition unit；The equalizing resistance is used to adjust the collection emitter voltage of IGBT, the sampling
Resistance is used for for obtaining collection emitter voltage signal corresponding with emitter voltage is collected, the voltage acquisition unit by the collection emitter-base bandgap grading
Voltage signal is converted to low voltage signal, and the temperature drift of the equalizing resistance and sampling resistor is less than 150ppm/ DEG C, to protect
For card under higher collection emitter voltage, temperature still will not influence sampled result；
The grid resistance module is used to issue grid emitter voltage signal, institute according to driving signal and the i-th square-wave signal
Stating grid resistance module includes basic resistance, N number of driver, N number of resistance and N number of semiconductor switch, N number of driver point
Not Wei the first driver, the second driver ... to N driver, N number of resistance be respectively first resistor, second resistance ...
To N resistance, N number of semiconductor switch be respectively the first semiconductor switch, the second semiconductor switch ... to N semiconductor
Switch；I-th input terminal of the input terminal of i-th driver as the grid resistance module, output end connect the i-th semiconductor
The control terminal of switch, N+1 input terminal of the input terminal of the basic resistance as the grid resistance module, output end conduct
The output end of the grid resistance module, i-th resistance connect to form the i-th series circuit with the i-th semiconductor switch, and described
I series circuit formation grid resistance in parallel with tandem circuit；
I-th driver is used to obtain the i-th control signal according to the i-th square-wave signal, and i-th semiconductor switch is used
In controlling signal, conducting or the i-th series circuit of disjunction according to described i-th, to change grid electricity in the grid resistance module
The whole resistance value of resistance then changes grid emitter voltage signal；
The resistance value of i-th resistance is less than basic resistance, and as N >=2, the resistance value of first resistor to N resistance is successively
Increase；For example, as N=2 first threshold can be set to the 1/3~2/5 of the peak value of the low voltage signal, second threshold
Be set as the 2/3~4/5 of the peak value of the low voltage signal, by the resistance value of first resistor be set as 1/4 times of second resistance~
1/2 times, 1/6 times~1/3 times of basic resistance is set by the resistance value of second resistance；In this way, working as the real value of low voltage signal
When greater than second threshold, then the first semiconductor switch and the disjunction simultaneously of the second semiconductor switch, the whole resistance value of grid resistance are
The resistance value of basic resistance, so that the output of grid resistance module has the gate voltage signal of relatively weak driving capability；When low electricity
When the real value of pressure signal is between first threshold and second threshold, the second semiconductor switch conducts, first switch semiconductor
Disjunction, the whole resistance value of grid resistance module are the 1/7~1/4 of basic resistance；When the real value of low voltage signal is less than
When first threshold, the first semiconductor switch and the second semiconductor switch conducts, the whole resistance value of grid resistance are basic resistance resistance
The 1/31~1/10 of value, so that the output of grid resistance module has the gate voltage signal of stronger driving capability, as shown in Figure 2.
Wherein, the high speed device that voltage acquisition unit selects delay to be less than 150ns, the i-th comparator and the choosing of the i-th driver
It is less than the high speed device of 20ns, with delay to guarantee that the whole delay of voltage equalizing protection circuit is less than 200ns.
Embodiment 1
Fig. 3 is using the voltage equalizing protection circuit diagram of principle production, which includes static voltage sharing, driving electricity
Road 1 and control circuit 2；Driving circuit 1 includes voltage acquisition module U1, comparison module U2, the first optical fiber receiver-transmitter module, driving
Module U3, grid resistance control module；The control circuit 2 includes the second optical fiber receiver-transmitter module and control module U6.
Fig. 4 is the circuit diagram of the present embodiment, and the series IGBT Q1 being connected in the voltage equalizing protection is FZ800R33KF2C；Its
Voltage rating is 3300V, rated current 800A, and blocking resistance is 660K Ω, and real work voltage is 1250V, sets peak value
Voltage is 1500V；
Static voltage sharing is in parallel with series IGBT Q1, and static voltage sharing includes concatenated equalizing resistance R4 and adopts
Sample resistance R3, equalizing resistance R4 are fixed resister RPH100V02502JB, and resistance value is 25K Ω, temperature drift 150ppm/
DEG C, sampling resistor is fixed resister BSI06380R00DR19, and resistance value is 80 Ω, and temperature drift is 100ppm/ DEG C, sampling electricity
It hinders in parallel with voltage acquisition module U1.
Voltage acquisition module U1 uses high speed current differential amplifier AD8216, the collection emitter-base bandgap grading electricity that sampling resistor R3 is obtained
Pressure signal is converted to the low voltage signal of 0~5V, is then transmitted to comparison module U2, the peak value of the collection emitter voltage signal is less than
10V。
Comparison module U2 uses High-Speed Double-Channel comparator MAX962, including first comparator B and the second comparator A,
The threshold voltage of first threshold voltage used in first comparator B is 2V, then comparator operation voltage is 2/5 × 1500=
600V, is the 48% of the real work voltage of series IGBT, and output amplitude is that the first square-wave signal of 5V reaches grid resistance control
The first input end of the high-speed driver U4 of molding block and the receiving end of the first optical fiber receiver-transmitter module.Used in second comparator A
Second threshold voltage be 4V, then comparator operation voltage be 4/5 × 1500=1200V, be series IGBT real work electricity
The 96% of pressure, output amplitude are that the second square-wave signal of 5V reaches the second defeated of the high-speed driver U4 of grid resistance control module
Enter end.
The threshold voltage of comparison module can adjust according to actual needs, such as in the present embodiment, when threshold voltage is 1V
When, comparator operation voltage be 1/5 × 1500=300V, the 20% of real work voltage, then when threshold voltage be 4.8V when, than
It is 4.8/5 × 1500=1440V compared with device operation voltage, is the 115.2% of real work voltage.
The receiving end of first optical fiber receiver-transmitter module uses high speed fibre receiver HFBR-2526 (C1), is connected by optical fiber
The output end HFBR-1527 (T1) of second optical fiber receiver-transmitter module of control circuit 2, to transmit the first square wave signaling switch letter
Number；The output end of optical fiber receiver-transmitter module uses high speed fibre transmitter HFBR-1527 (T2), connects control circuit 2 by optical fiber
Optical fiber receiver-transmitter module receiving end HFBR-2526 (C2), for obtaining IGBT switching signal.Due to connecing for optical fiber receiver-transmitter module
It is isolated between receiving end and transmitting terminal by light, therefore its insulation voltage is equal with the isolation voltage of power supply, this programme
Using the Switching Power Supply of 100KV isolation voltage, therefore can be applicable in 100KV scene.It is flat according to other other optocouplers, current potential
Shift circuit limits the use in hyperbaric environment because itself device isolation voltage is only up to 6.5KV.
Control module U6 uses DSP 28335, is connected with the output end of the second optical fiber receiver-transmitter module, output single-pole is low
Amplitude, the IGBT switching signal of no isolation, low level 0V, high level 5V.
Drive module U3 uses 1SC2060P, to by received unipolarity, low amplitude value, the IGBT switching signal of no isolation
It is converted, obtains bipolarity, amplitude, the IGBT switching signal of high isolation, low level is -10V, high level 15V.
Grid resistance control module includes 5 Ohmic resistance R1,10 Ohmic resistance R2,40 Ohmic resistance R0, two-way high speed
Switch mosfet CSD88539ND (U4) and two-way high-speed driver UCC27523D (U5), the road A of 10 Ohmic resistances and MOSFET
Drain series, the drain series on the road B of 5 Ohmic resistances and MOSFET are then jointly in parallel with 40 Ohmic resistances again, after in parallel
Grid resistance is collectively formed.The output end of the input terminal connection drive module U3 of grid resistance, output end are connected to series IGBT
(Q1) control terminal；The grid on the road A of the output end connection MOSFET on the road A of high-speed driver simultaneously, the grid of the road B MOSFET
The output for connecting the road B high-speed driver, to the whole resistance value size of grid resistance control module when changing switching process, from
And it obtains grid corresponding with IGBT switching signal and penetrates collecting voltage signal.Therefore, when the low voltage signal of voltage acquisition module output
Real value be lower than first threshold when, two-way high speed switch mosfet is in the conductive state, the actual resistance of grid resistance module
About 3.08 Ω；When the real value of the low voltage signal of voltage acquisition module output is higher than first threshold and it is less than second threshold
When, the road the B disjunction of switch mosfet, the road A is held on, and the actual resistance of grid resistance is 8 Ω at this time；When low voltage signal
When real value is higher than second threshold, the two-way of high speed switch mosfet is in disjunction state, the practical resistance of grid resistance module
Value is 40 Ω.
It is 120ns (± 8ns) by the propagation delay of the high speed current differential amplifier AD8216 chosen in this present embodiment,
High-Speed Double-Channel comparator MAX962 propagation delay is 6.9ns (± 2ns), and two-way high-speed driver UCC27523D (U5) is propagated
Delay is 10ns (± 2ns), therefore the whole delay of the voltage equalizing protection circuit is within 150ns；And the series connection of the present embodiment
The operating voltage of IGBT is 1250V, and the turn-off time is 1.5 μ s, passes through accurate sampling set emitter voltage, dynamic change series connection
The whole resistance value of grid resistance control module when IGBT is turned off, can be effectively controlled the waveform that grid penetrate collecting voltage signal, reduced
Voltage crest value, while the excessive pressure damages risk in the entire duty cycle can easily be reduced using switching sequence adjustment technology.Pass through
Optical fiber receiver-transmitter module transmits square-wave signal and IGBT switching signal, has widened the operating voltage range of IGBT, can apply
Hundred kilovolts of scenes.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (9)
1. a kind of voltage equalizing protection circuit for series IGBT, which is characterized in that including voltage acquisition module, the i-th comparator, control
Molding block and grid resistance module；Wherein, i is the integer of 1~N, and N is natural number；
I-th output end of the voltage acquisition module connects the i-th comparator, the output end connection grid electricity of i-th comparator
The i-th input terminal of module is hindered, the output end of first comparator is also connected with the input terminal of control module, the control module
Output end connects the N+1 input terminal of grid resistance module, and the output end of the grid resistance module is as the voltage equalizing protection
The output end of circuit；
The voltage acquisition module is for obtaining low voltage signal corresponding with emitter voltage signal is collected；
I-th comparator is used to turn the low voltage signal by being compared with the i-th threshold value the low voltage signal
It is changed to the i-th square-wave signal, i-th threshold value is less than the peak value of the low voltage signal；
The control module is used to issue driving signal according to the first square-wave signal；
The grid resistance module is used to change whole resistance value, and obtain according to i-th square-wave signal and driving signal
The grid of IGBT penetrate collecting voltage signal；
Wherein, the grid resistance module includes basic resistance, the i-th driver, the i-th resistance and the i-th semiconductor switch, described
I-th resistance connects to form the i-th series circuit with the i-th semiconductor switch, and i-th series circuit is in parallel with basic resistance；It is described
The resistance value of i-th resistance is less than basic resistance；I-th input of the input terminal of i-th driver as the grid resistance module
End, output end connect the control terminal of the i-th semiconductor switch, and the input terminal of the basic resistance is as the grid resistance module
N+1 input terminal, output end of the output end as the grid resistance module；
I-th driver is used to obtain the i-th control signal according to the i-th square-wave signal, and i-th semiconductor switch is used for root
According to the i-th control signal, conducting or the i-th series circuit of disjunction, to change the whole resistance value of the grid resistance module.
2. voltage equalizing protection circuit according to claim 1, which is characterized in that N >=2, and first threshold to N threshold value successively
It is incremented by.
3. voltage equalizing protection circuit according to claim 2, which is characterized in that N=2, the first threshold are low-voltage letter
Number peak value 1/3~2/5, the second threshold be low voltage signal peak value 2/3~4/5.
4. voltage equalizing protection circuit according to claim 1, which is characterized in that the delay of i-th comparator is less than 20ns.
5. voltage equalizing protection circuit according to claim 1, which is characterized in that the control module include control unit, every
From unit and driving unit, input terminal of the input terminal of the isolated location as the control module, interaction end connection control
The interaction end of unit processed, output end connect the input terminal of driving unit, and the output end of the driving unit is as the control mould
The output end of block；
Described control unit is used to issue unipolarity, the driving signal of low amplitude value, the isolated location according to the first square-wave signal
For control unit and first comparator to be isolated, and for control unit and driving unit to be isolated, the driving unit is used for
Export bipolarity, the driving signal of amplitude.
6. voltage equalizing protection circuit according to claim 1, which is characterized in that the voltage acquisition module includes equal piezoelectricity
Resistance, sampling resistor and voltage acquisition unit, the first end of the equalizing resistance are used to connect the first end of IGBT, and second end connects
The first end of the sampling resistor and the first input end of voltage acquisition module are connect, the second end of the sampling resistor connects electricity
Press the second input terminal of acquisition module, and the second end for connecting IGBT；
The equalizing resistance is used to adjust the quiescent voltage of IGBT, and the sampling resistor is for obtaining collection emitter voltage signal, institute
It states voltage acquisition unit and is converted to low voltage signal for emitter voltage signal will to be collected.
7. voltage equalizing protection circuit according to claim 6, which is characterized in that the temperature of the equalizing resistance and sampling resistor
Drift is less than 150ppm/ DEG C.
8. voltage equalizing protection circuit according to claim 1, which is characterized in that N >=2, and first resistor is to the resistance of N resistance
It is worth incremented by successively.
9. voltage equalizing protection circuit according to claim 8, which is characterized in that N=2, the resistance value of the first resistor are the
The 1/4~1/2 of two resistance, the resistance value of the second resistance are the 1/6~1/3 of basic resistance.
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| CN108306254A (en) * | 2018-04-09 | 2018-07-20 | 广州金升阳科技有限公司 | A kind of isolation protective circuit and the Switching Power Supply comprising the circuit |
| JP6935375B2 (en) * | 2018-09-04 | 2021-09-15 | 株式会社東芝 | Switching devices, power converters, controls and programs |
| CN111555260B (en) * | 2020-05-12 | 2023-05-02 | 盐城工学院 | Photovoltaic submodule based on capacitor-free voltage equalizer |
| CN111464007B (en) * | 2020-05-13 | 2022-05-24 | 阳光电源股份有限公司 | Method and system for restraining peak voltage at turn-off instant of full-control power switch device |
| CN112019201B (en) * | 2020-08-27 | 2023-04-25 | 电子科技大学 | Gate current regulator of IGBT device |
| CN112491406B (en) * | 2020-11-26 | 2023-07-25 | 核工业西南物理研究院 | High-voltage solid-state modulator with voltage regulation capability |
| CN115436693B (en) * | 2022-08-22 | 2023-12-05 | 中国科学院合肥物质科学研究院 | Voltage detection device and method for judging whether high voltage of input end exceeds preset value |
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