CN106787733A - A kind of boost conversion circuit - Google Patents

A kind of boost conversion circuit Download PDF

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Publication number
CN106787733A
CN106787733A CN201710086314.1A CN201710086314A CN106787733A CN 106787733 A CN106787733 A CN 106787733A CN 201710086314 A CN201710086314 A CN 201710086314A CN 106787733 A CN106787733 A CN 106787733A
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China
Prior art keywords
circuit
transistor
voltage
connection
drain electrode
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CN201710086314.1A
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Chinese (zh)
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CN106787733B (en
Inventor
田学农
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Suzhou University of Science and Technology
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Suzhou University of Science and Technology
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0067—Converter structures employing plural converter units, other than for parallel operation of the units on a single load
    • H02M1/0074—Plural converter units whose inputs are connected in series
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

Propose a kind of to realize promotion buckling than Method and circuits that DC boosting is converted by Two Stages, the switching branches of first order booster circuit are made up of two MOS transistor cascades, and cut-off signals are produced to control its break-make by comparing output voltage and default bias voltage；First order booster circuit work during circuit start, first order circuit is acted on disconnection by cut-off signals after output voltage is raised, while the second booster circuit starts to provide the high output voltage of stabilization.

Description

A kind of boost conversion circuit
Technical field
The present invention relates to DC-DC voltage translation circuit.
Background technology
General booster circuit is as shown in figure 1, the switch periodic on or off of T, it is assumed that switch periods are TS, wherein opening Close ON time tonIt is DTS, switch OFF time toffIt is (1-D) TS, here 0<D<1.Then switched voltage output is,
Required output voltage can be obtained by adjusting dutycycle D.
When switching signal or input voltage than it is relatively low when, it is necessary to using the metal-oxide-semiconductor of Low threshold as switching device, but low threshold The MOS of value is smaller with substrate doping due to gate oxide thickness so that its withstanding voltage is low, therefore can not obtain high Output voltage and boosting no-load voltage ratio.In order to obtain output voltage high, it is necessary to using withstanding voltage switch metal-oxide-semiconductor high, but so Device gate oxide thickness and substrate doping all than larger, threshold voltage can increase so that electricity during low input The difficulty in starting on road.
The present invention proposes a kind of new two-stage DC boosting translation circuit, and height can be obtained under the conditions of low input Output voltage and voltage change ratio.
The content of the invention
Booster circuit is a kind of conventional DC voltage conversion circuit, but when Gao Shixu is compared in output voltage or boosting change Wanting switching tube has larger withstanding voltage, and the device architecture needed for big withstanding voltage can cause threshold value high with doping concentration Voltage so that the difficulty in starting of circuit, in order to solve this problem, the present invention proposes a kind of new two-stage DC boosting conversion electricity Road.
The present invention proposes a kind of promotion buckling than DC boosting transform method, and the switching branches of first order booster circuit are by low Threshold mos transistor is constituted, while the work of the switching branches is controlled by cut-off signals, the shut-off when the output voltage is low is believed Number cause first order switching branches normal work, when output voltage is high the cut-off signals cause first order switching branches turn off； Output voltage and predetermined reference voltage as differential pair grid two bias voltages, when output voltage changes, differential pair tail The electric current relations of distribution of electric current in current source in two differential pairs change, and cause transistor load pressure drop to change, transistor The cut-off signals voltage that is exported of drain electrode change therewith, cause the change of first order switching branches on off operating mode；Second level liter The switching branches of volt circuit are made up of withstanding voltage high threshold voltage MOS transistor high, the switch branch of second level booster circuit The control signal on road is produced by level shift circuit, and switching control pulse is connected to level shift circuit input, level shift Circuit output end is connected to the control gate of second level switching tube, when output voltage is raised under the effect of first order booster circuit When, the output voltage of level shift circuit is raised, such that it is able to control second level switching branches high threshold voltage switch metal-oxide-semiconductor Break-make.
The present invention proposes a kind of promotion buckling than DC boosting translation circuit, and the circuit includes first order booster circuit 110, second level booster circuit 130, level shift circuit 120, cut-off signals produce circuit 140.
Above-mentioned promotion buckling is than the first order booster circuit in DC boosting translation circuit, inductance L1Side and input voltage Connection, opposite side and switching branches and diode D1Positive pole connection；Switching branches are by two transistor M8With M9Cascade, wherein Transistor M9Grid connecting valve control wave, transistor M9Drain electrode and transistor M8Source electrode connection, transistor M8 The output of grid and breaking circuit 140 cut-off signals Vsw1Connection, transistor M8Drain electrode and inductance L1With diode D1Public affairs End connection altogether；Diode D1Negative pole and output capacitance C1With resistance RLA common port connection, output capacitance C1With resistance RL Parallel connection, another common end grounding.
Above-mentioned promotion buckling than the breaking circuit in DC boosting translation circuit, including by transistor M4With M5The difference of composition Divide right, M4With M5Source electrode and transistor M6Drain electrode connection, M6It is tail current source；Transistor M2With M3Grid and drain electrode it is short Connect, M2With M3Drain electrode meet input voltage Vin, M4Grid meet output voltage Vout, M7Source ground, M7Drain electrode with load Resistance R2Connection, M2Source electrode and M7Load resistance R2The voltage of the common port for being connected is the cut-off signals V of outputSW1, M5, M6, M7 grid voltage meet bias voltage V respectivelyB1、VB3、VB2。
Above-mentioned promotion buckling than DC boosting translation circuit second level booster circuit, including inductance L2, switch MOS crystal Pipe M10, diode D2, electric capacity C2, inductance L3；Inductance L2Side is connected with input voltage, other side and switch mos transistor M10 Drain electrode connection, transistor M10Grid and 120 circuits in M1Drain electrode connection, M10Source ground；Diode D2Positive pole With M10Drain electrode connection, diode D2Negative pole and electric capacity C2Connection, inductance L3Side and electric capacity C2Connection, other side connection is negative Carry resistance RL。
Above-mentioned promotion buckling includes MOS transistor M than DC boosting translation circuit1With resistance R1, wherein M1Grid connection Switching pulse signal, resistance R1Side and M1Drain electrode connection, resistance R1Other side be connected with the output end of booster circuit.
Brief description of the drawings
Fig. 1 is booster circuit schematic diagram
Fig. 2 is two-stage boost conversion circuit figure
Specific embodiment
Fig. 2 be the present invention propose promotion buckling than booster circuit figure.Wherein
(1) 110 circuit is first order boost conversion circuit, including M8,M9,L1,D1,C1,RL, wherein M8,M9It is Low threshold MOS device.
(2) 120 circuits are level shift circuit, including M1,R1, M1It is Low threshold MOS device.
(3) 140 circuits are breaking circuit, including M2、M3、M4、M5、M6、M7, R2。
(4) 130 is second level boost conversion circuit, including L2,D2,L3,C2,M10,RL, M10It is high threshold voltage devices.
M in 140 circuits4、M5It is differential pair circuit, M6It is the tail current source of differential pair, M2With M3It is the metal-oxide-semiconductor of grid leak short circuit As active load, M7With R2It is output circuit.M2With M3Drain electrode meet input voltage Vin, M4Grid connect boost conversion circuit Output voltage Vout, M5、M6、M7Grid voltage meet bias voltage V respectivelyB1、VB3、VB2, M2Source electrode be output shut-off letter Number VSW1.When circuit start, M4Grid meets the output V of first order booster circuitout, now tail current source M6The electric current for being provided By M4And M5Distribution, the ratio of distribution is by VoutAnd VB1Size determine, work as M4Side electric current is smaller, M2Drain-source pressure drop also compare Cut-off signals V that is small, being exportedSW1First order switch cascade tube M can be ensured8Conducting；As output voltage VoutRaise, M4Side Electric current increases, M2Drain-source pressure drop increase therewith, cut-off signals VSW1Reduce, until first order switch cascade tube is turned off.So Realize the shut-off of first order booster circuit when output voltage increases.
As initial output voltage VoutWhen not high, M1Drain voltage is than relatively low, M10Can not open, the 2nd grade of booster circuit can not Work；VoutIt is low so that M4Drain current is smaller, such M2Source and drain pressure drop is smaller, M8Conducting, first order boost conversion circuit Induction charging loop can turn on, first order circuit can realize boost function with normal work；By changing switching pulse Dutycycle can change output voltage, as output voltage VoutRaise, by level shift circuit M1Drain potential increases, so The second level switching pulse level that M1 drains exported is raised and causes M10Can open, second level booster circuit is started working, together When VoutRising causes M4Side electric current increases, M2Drain-source pressure drop increases, M8Grid potential reduction, M8It is turned off, such first order is opened Close branch road to be turned off, reduce power loss.
Above circuit can cause that circuit is boosting no-load voltage ratio less or during circuit start using the work of first order circuit, defeated Go out after voltage is raised to start the work of second level booster circuit and obtain high output voltage, using level shift circuit so that switching signal Increase, it is ensured that the M of high threshold voltage10Can be worked with normal table.

Claims (6)

1. the present invention proposes a kind of promotion buckling than DC boosting transform method, it is characterized in that：The switch of first order booster circuit Branch route Low threshold MOS transistor is constituted, while the work of the switching branches is controlled by cut-off signals, when the output voltage is low The cut-off signals cause first order switching branches normal work, and when output voltage is high, the cut-off signals cause that the first order switchs branch Road turns off；Output voltage and predetermined reference voltage as differential pair grid two bias voltages, it is poor when output voltage changes It is divided to the electric current relations of distribution to the electric current in tail current source in two differential pairs to change, causes transistor load pressure drop to change, The cut-off signals voltage that the drain electrode of transistor is exported changes therewith, causes the change of first order switching branches on off operating mode；The Two grades of switching branches of booster circuit are made up of withstanding voltage high threshold voltage MOS transistor high, second level booster circuit The control signal of switching branches is produced by level shift circuit, and switching control pulse is connected to level shift circuit input, electricity Translational shifting circuit output end is connected to the control gate of second level switching tube, when output voltage is under the effect of first order booster circuit During rising, the output voltage of level shift circuit is raised, such that it is able to control second level switching branches high threshold voltage to switch MOS The break-make of pipe.
2. the present invention proposes a kind of promotion buckling than DC boosting translation circuit, it is characterized in that：The circuit includes first order liter Volt circuit 110, second level booster circuit 130, level shift circuit 120, cut-off signals produce circuit 140.
3. the promotion buckling in claim 2 is than the first order booster circuit in DC boosting translation circuit, it is characterized in that：Inductance L1Side is connected with input voltage, opposite side and switching branches and diode D1Positive pole connection；Switching branches are by two transistors M8With M9Cascade, wherein transistor M9Grid connecting valve control wave, transistor M9Drain electrode and transistor M8Source Pole connects, transistor M8The output of grid and breaking circuit 140 cut-off signals Vsw1Connection, transistor M8Drain electrode and inductance L1 With diode D1Common port connection；Diode D1Negative pole and output capacitance C1With resistance RLA common port connection, output Electric capacity C1With resistance RLParallel connection, another common end grounding.
4. the promotion buckling in claim 2 is than the breaking circuit in DC boosting translation circuit, it is characterized in that：The shut-off electricity Road is included by transistor M4With M5The differential pair of composition, M4With M5Source electrode and transistor M6Drain electrode connection, M6It is tail current source； Transistor M2With M3Grid and drain electrode short circuit, M2With M3Drain electrode meet input voltage Vin, M4Grid meet output voltage Vout, M7 Source ground, M7Drain electrode and load resistance R2Connection, M2Source electrode and M7Load resistance R2The electricity of the common port for being connected Pressure is the cut-off signals V of outputSW1, M5, M6, M7 grid voltage meet bias voltage V respectivelyB1、VB3、VB2。
5. the promotion buckling in claim 2 is than the second level booster circuit in DC boosting translation circuit, it is characterized in that：Second Level booster circuit includes inductance L2, switch mos transistor M10, diode D2, electric capacity C2, inductance L3；Inductance L2Side and input electricity Pressure connection, other side and switch mos transistor M10Drain electrode connection, transistor M10Grid and 120 circuits in M1Drain electrode Connection, M10Source ground；Diode D2Positive pole and M10Drain electrode connection, diode D2Negative pole and electric capacity C2Connection, inductance L3 Side and electric capacity C2Connection, other side connection load resistance RL。
6. in claim 2 promotion buckling than level shift circuit in DC boosting translation circuit, it is characterized in that：Level shift Circuit includes MOS transistor M1With resistance R1, wherein M1Grid connecting valve pulse signal, resistance R1Side and M1Drain electrode connect Connect, resistance R1Other side be connected with the output end of booster circuit.
CN201710086314.1A 2017-02-17 2017-02-17 Boost conversion circuit Active CN106787733B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710086314.1A CN106787733B (en) 2017-02-17 2017-02-17 Boost conversion circuit

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Application Number Priority Date Filing Date Title
CN201710086314.1A CN106787733B (en) 2017-02-17 2017-02-17 Boost conversion circuit

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CN106787733A true CN106787733A (en) 2017-05-31
CN106787733B CN106787733B (en) 2023-04-28

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN203660880U (en) * 2013-12-30 2014-06-18 东莞市金河田实业有限公司 Two-stage boost topological circuit
US20150189716A1 (en) * 2013-12-30 2015-07-02 Shenzhen China Star Optoelectronics Technology Co., Ltd. Led backlight driving circuit and liquid crystal device
CN104838574A (en) * 2012-10-31 2015-08-12 克里公司 Power converter with bias voltage regulation circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104838574A (en) * 2012-10-31 2015-08-12 克里公司 Power converter with bias voltage regulation circuit
CN203660880U (en) * 2013-12-30 2014-06-18 东莞市金河田实业有限公司 Two-stage boost topological circuit
US20150189716A1 (en) * 2013-12-30 2015-07-02 Shenzhen China Star Optoelectronics Technology Co., Ltd. Led backlight driving circuit and liquid crystal device

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