CN106785913A - Composite construction nano laser of GaN base ultra-thin metal oxide semiconductor and preparation method thereof - Google Patents
Composite construction nano laser of GaN base ultra-thin metal oxide semiconductor and preparation method thereof Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 27
- 238000010276 construction Methods 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910044991 metal oxide Inorganic materials 0.000 title abstract 2
- 150000004706 metal oxides Chemical class 0.000 title abstract 2
- 239000002184 metal Substances 0.000 claims abstract description 59
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000002061 nanopillar Substances 0.000 claims abstract description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 31
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 31
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 31
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 31
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 31
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 4
- 239000010980 sapphire Substances 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 46
- 238000005530 etching Methods 0.000 claims description 35
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 34
- 239000003292 glue Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 30
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 27
- 229910002704 AlGaN Inorganic materials 0.000 claims description 25
- 235000012431 wafers Nutrition 0.000 claims description 19
- 238000005516 engineering process Methods 0.000 claims description 17
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 14
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 14
- 238000005566 electron beam evaporation Methods 0.000 claims description 14
- 230000002708 enhancing effect Effects 0.000 claims description 14
- 230000003746 surface roughness Effects 0.000 claims description 14
- 239000000725 suspension Substances 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 238000004049 embossing Methods 0.000 claims description 8
- 208000027418 Wounds and injury Diseases 0.000 claims description 7
- 238000000231 atomic layer deposition Methods 0.000 claims description 7
- 230000006378 damage Effects 0.000 claims description 7
- 238000007654 immersion Methods 0.000 claims description 7
- 238000009616 inductively coupled plasma Methods 0.000 claims description 7
- 208000014674 injury Diseases 0.000 claims description 7
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 7
- 238000004062 sedimentation Methods 0.000 claims description 7
- 239000002904 solvent Substances 0.000 claims description 7
- 238000002604 ultrasonography Methods 0.000 claims description 7
- 239000006185 dispersion Substances 0.000 claims description 4
- 150000007522 mineralic acids Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 238000005086 pumping Methods 0.000 abstract description 7
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000012984 biological imaging Methods 0.000 abstract description 2
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- 230000005622 photoelectricity Effects 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 119
- 239000002585 base Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 12
- 238000003491 array Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 239000002070 nanowire Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000003389 potentiating effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3013—AIIIBV compounds
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Drying Of Semiconductors (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of composite construction nano laser of GaN base ultra-thin metal oxide semiconductor, it is made up of substrate and InGaN/GaN SQW nano-pillars, substrate structure includes successively：SiO2Si substrates, metal level, ultrathin oxide layer；The InGaN/GaN SQWs nano-pillar is positioned over ultrathin oxide layer surface, and its structure includes successively：Sapphire Substrate layer, n-type GaN layer, InxGa1‑xN/GaN mqw active layers and p-type GaN layer.And disclose its preparation method.The laser structure has advantages below：(1) the light model volume with very little, can break through the diffraction limit of light, realize submicron-scale laser；(2) with extremely low lasing threshold, MUTOS laser structures can be in 0.15kW/cm2Optical pumping under produce lasing；(3) pattern of laser can be regulated and controled, realizes single mode and multi-mode laser transmitting.Laser structure of the invention has potential using value at super-resolution intelligent display, complex biological imaging, si-substrate integrated circuit and opto-electronic device photoelectricity interconnection aspect.
Description
Technical field
Patent of the present invention be related to a kind of composite construction nano laser of GaN base metal-ultrathin oxide-semiconductor and its
Preparation method, belongs to micro-nano photoelectron and laser device application field.
Background technology
III nitride semiconductor has the energy gap wide of continuously adjustabe, has in bluish-green and ultraviolet photoelectron device
Suitable advantage.In order to improve the efficiency of luminescent device and expand the function of device, the substantial amounts of use low-dimensional quantum knot of researcher
The structures such as structure, including SQW, quantum wire (nano wire), nano dot, at the same enable device mechanics, biochemistry, electromagnetism with
And many-sided displaying excellent properties such as photoelectron.One-dimensional nano line (post) quantum structure because of it there is good optical confinement to imitate
Should, optical microcavity is formed, radiative recombination rate can be accelerated according to fermic golden rule principle.With the one-dimensional of nanoscale
For InGaN/GaN multi-quantum pit structures are compared to plane quantum well structures, because mismatch stress caused by hetero-epitaxy can
Largely it is released, the acquisition more preferable quantum well structure of crystal mass can be grown；The release of stress simultaneously, moreover it is possible to cut down
Piezoelectric polarization effect, compacting/eliminate subtracts quantum confined Stark this effect.In addition, nano wire (post) is due on geometry
Anisotropy, 1-dimention nano post device can produce the luminous of High Linear degree of polarization.At present, based on one-dimensional nano line luminous two
Device development and the inventions such as pole pipe (LED), laser (LD), solar cell, detector, receive academia and industrial quarters phase
When attention.
At present, most iii-V races semiconductor laser is based primarily upon Fabry-Perot (Fabry-P é rot) optical cavity knot
Structure, this structure is that, by two light reflection cavity faces of high reflection, realization produces laser to the gain of light, therefore, optical cavity
The size-constrained diffraction wavelength in laser, typically wavelength X/2.In recent years a kind of new surface phasmon nanometer is emerged to swash
Light device, the stimulated radiation realized is amplified based on surface phasmon, and it has ultralow lasing threshold, extra small optical mode co-volume
Advantage, is expected to the photoelectricity as micro-nano laser application of new generation in si-substrate integrated circuit and opto-electronic device and interconnects.2009
Year, the researcher of Univ California-Berkeley takes the lead in successfully preparing the SPASER based on cadmium sulfide (CdS) nano wire
Laser, observes bluish-green lase phenomenon under 10K extremely low temperatures.TaiWan, China Tsing-Hua University researcher is using outside molecular beam
Prolong (MBE) and grow InGaN/GaN nuclear shell structure nano lines, the gallium nitride base SPASER lasers prepared can be in liquid nitrogen temperature
Degree 77K work.But if realize large area, high-quality one-dimensional InGaN/GaN nano-wire arrays, and prepare metal-ultra-thin
Oxidc-Semiconductor (MUTOS) composite construction is always a problem, there is no related invention patent to inquire about and borrow in China at present
Mirror.Chinese patent ZL201310256681.3 discloses a kind of using ultraviolet soft nanometer embossing (UV-NIL) large area preparation
The method of high-quality InGaN/GaN ordered nano post arrays.The present invention on above-mentioned patent basis, using PMMA and ultraviolet solid
Change the ultraviolet soft impressing of glue bilayer glue technology and prepare large area, the InGaN/GaN nano-pillars of low defect, so as to realizing array in order and
Gallium nitride nano-array with homogeneous diameter length, can be used to prepare MUTOS composite construction nano lasers.
The content of the invention
Partly led it is an object of the invention to provide a kind of GaN base metal-ultrathin oxide-based on InGaN/GaN nano-pillars
The composite construction nano laser of body.
To reach above-mentioned purpose, the technical solution adopted by the present invention is：A kind of GaN base metal-ultrathin oxide-semiconductor
Composite construction nano laser, be made up of substrate and InGaN/GaN SQW nano-pillars, substrate structure is wrapped successively from bottom to top
Include：
One SiO2- Si substrates；
One evaporation is in SiO2Metal level on-Si substrates；
One growth ultrathin oxide layer on the metal layer；
The InGaN/GaN SQWs nano-pillar is positioned over ultrathin oxide layer surface, and its structure is wrapped successively from bottom to top
Include：
One Sapphire Substrate layer；
One is grown in the n-type GaN layer on substrate layer；
One is grown in the In in n-type GaN layerxGa1-xN/GaN mqw active layers；
One is grown in InxGa1-xP-type AlGaN barrier layers and p-type GaN layer on N/GaN mqw active layers.
Further, the x scopes：0.12≤x≤0.35, mqw active layer emission wavelength in 430nm to 530nm,
The gross thickness of the periodicity of SQW 10~15, p-type AlGaN barrier layers and p-type GaN layer is 300~500nm.
Further, the InGaN/GaN SQWs nano-pillar be cylinder, cylindroid or square column, maximum gauge be 100~
400nm, is highly 2.2~2.8 μm.
Further, the ultrathin oxide is SiO2、Al2O3Or HfO2, ultrathin oxide thickness degree is 6~12nm,
Surface roughness<0.1nm.
Further, the metal of the metal level is selected from Ag, Au or Al, and thickness is 23~28nm, surface roughness<
0.1nm。
Further, the SiO2- Si substrates are by silicon chip and SiO2Layer composition, the SiO2Thickness degree is 200~400nm.
Present invention also offers the system of the composite construction nano laser of above-mentioned GaN base metal-ultrathin oxide-semiconductor
Preparation Method, its step includes：
(1) layer insulating is grown on InGaN/GaN SQW epitaxial wafers, PMMA glue and uv-curable glue is revolved successively
It is coated in surface of insulating layer；
(2) ultraviolet soft nanometer embossing is used, the orderly of large area is formed on ultra-violet curing glue-line using soft template
Nano column array；
(3) reactive ion beam etching technique is used, CHF is passed through3And O2Mixed gas etch ultra-violet curing glue-line remnants
Part, then with uv-curable glue as mask, using RIE technologies, is passed through O2PMMA layers is performed etching, by nano column array knot
Structure is transferred to PMMA layers, exposes insulating barrier；
(4) using electron beam evaporation platform in InGaN/GaN SQW epitaxial wafers surface deposited metal film, by metal-plated membrane
Epitaxial wafer be placed in acetone soln immersion, additional ultrasound is peeled off, and PMMA layers of stripping obtain marking in the big face on p-type GaN layer surface
The orderly metal nano post array of product；
(5) inductively coupled plasma etching technology is used, Cl is passed through2With the mixed gas of Ar, anisotropic etching p-type
GaN layer, p-type AlGaN barrier layers, InGaN/GaN mqw active layers, n-type GaN layer, form and run through p-type GaN layer, p-type AlGaN
Barrier layer, InGaN/GaN mqw active layers, are deep to the nano column array of n-type GaN layer, and sample is placed on into inorganic acid or nothing
Water-bath removal etching injury, then removes the insulating barrier of remnants in machine aqueous slkali；
(6) on silicon chip, using plasma enhancing chemical vapor deposition method deposition SiO2Layer, forms SiO2- Si is served as a contrast
Bottom；
(7) electron beam evaporation metal is used, in SiO2Layer surface deposited metal layer, sedimentation rate<3nm/min；
(8) using plasma enhancing chemical vapor deposition method or atomic layer deposition method grow ultra-thin oxygen in layer on surface of metal
Compound layer, growth rate<1nm/min；
(9) by step (5) obtain nano column array be placed in organic solution, using ultrasonic vibration carry out it is mechanically decoupled and
Dispersion obtains InGaN/GaN SQW nano-pillar suspensions, and then suspension is added dropwise on the substrate prepared by step (8),
Finally the solvent on substrate is evaporated by baking, makes that nano-pillar is scattered to be distributed on substrate.
Further, the insulating barrier is SiO2Layer or SiC layer.
Further, the organic solution selects the organic solvent of high volatile, and most common selection is ethanol or second
Glycol.
Present invention utilizes ultraviolet soft nano impression, lithography, nano column array shift multinomial micro-nano and add from top to bottom
The technique of work technology, obtains array in order and the gallium nitride nano column array with homogeneous diameter length, and final realize can be
The gallium nitride base blue-green Laser for working at room temperature.Obtained nano-pillar can be cylinder, cylindroid, various shapes such as square column
Shape, changes cylindroid major and minor axis or square column short side long is parallel with super thin oxide layer interface or vertical in MUTOS preparation process
Relation, is capable of achieving regulation and control single mode or multi-mode laser.The laser structure has advantages below：(1) the light model volume with very little,
The diffraction limit of light can be broken through, submicron-scale laser is realized；(2) with extremely low lasing threshold, MUTOS laser structures
Can be in 0.15kW/cm2Optical pumping under produce lasing；(3) pattern of laser can be regulated and controled, realizes that single mode and multimode swash
Light is launched.Laser structure of the invention is in super-resolution intelligent display, complex biological imaging, si-substrate integrated circuit and photoelectron
Device photoelectric interconnection aspect has potential using value.
Brief description of the drawings
The InGaN/GaN SQW epitaxial slice structure schematic diagrames that Fig. 1 is obtained for step (1) in embodiment 1.
The InGaN/GaN SQW nm cylinder array schematic diagrames that Fig. 2 is obtained for step (5) in embodiment 1.
The surface Scanning Electron of the InGaN/GaN SQW nm cylinder arrays that Fig. 3 is obtained for step (5) in embodiment 1
Microscope (SEM) photo.
Silica-silicon substrate structure schematic diagram that Fig. 4 is obtained for step (6) in embodiment 1.
The structural representation of metal level in the MUTOS composite constructions that Fig. 5 is obtained for step (7) in embodiment 1.
The structural representation of super thin oxide layer in the MUTOS composite constructions that Fig. 6 is obtained for step (8) in embodiment 1.
The structural representation of the InGaN/GaN SQW nano-pillars that Fig. 7 is obtained for step (9) in embodiment 1.
Fig. 8 be embodiment 1 in step (9) shift InGaN/GaN SQW nano-pillars after, formed MUTOS composite constructions
Schematic diagram.
Fig. 9 shines for the SEM of the orderly InGaN/GaN MQWs nanometer cylindroid array that step (5) in embodiment 2 is obtained
Piece.
Figure 10 is the major axis and super thin oxide layer/metal stratum boundary of working as oval nano-pillar of step (10) formation in embodiment 2
When face is parallel, the schematic diagram of the composite construction of MUTOS.
Figure 11 is the major axis and super thin oxide layer/metal stratum boundary of working as oval nano-pillar of step (10) formation in embodiment 2
When face is parallel, the surface SEM pictures of MUTOS structures.
Figure 12 is the major axis and super thin oxide layer/metal stratum boundary of working as oval nano-pillar of step (10) formation in embodiment 2
When face is parallel, the spectrum of single-mode laser transmitting at room temperature is realized.
Figure 13 is the short axle and super thin oxide layer/metal stratum boundary of working as oval nano-pillar of step (10) formation in embodiment 3
When face is parallel, the schematic diagram of MUTOS.
Figure 14 is the short axle and super thin oxide layer/metal stratum boundary of working as oval nano-pillar of step (10) formation in embodiment 3
When face is parallel, the surface SEM pictures of MUTOS structures.
Figure 15 is the short axle and super thin oxide layer/metal stratum boundary of working as oval nano-pillar of step (10) formation in embodiment 3
When face is parallel, the spectrum of multi-mode laser transmitting at room temperature is realized.
Wherein 1：N-type GaN layer, 2：InxGa1-xN/GaN mqw active layers, 3：P-type AlGaN barrier layers and p-type GaN layer,
4：Silicon chip, 5：SiO2Layer, 6：Metal level, 7：Ultrathin oxide layer, 8, InGaN/GaN SQW nano-pillars.
Specific embodiment of the invention is described further below in conjunction with the accompanying drawings.
Specific embodiment
Embodiment 1
The preparation method of the composite construction nano laser of this GaN base metal-ultrathin oxide-semiconductor, its step bag
Include：
(1) one layer of SiO is grown on InGaN/GaN SQW epitaxial wafers2Insulating barrier, by PMMA glue and uv-curable glue according to
Secondary to be spin-coated on surface of insulating layer, PMMA glue thickness is 200nm, and uv-curable glue thickness is 30nm, InGaN/GaN SQW extensions
Piece its structure includes successively from bottom to top：One Sapphire Substrate layer, one is grown in the n-type GaN layer 1 on substrate layer, and one is grown in n
In in type GaN layerxGa1-xN/GaN mqw active layers 2, one is grown in InxGa1-xP-type on N/GaN mqw active layers
AlGaN barrier layers and p-type GaN layer 3, wherein x=0.23, mqw active layer emission wavelength is in 490nm, the periodicity of SQW
10, the gross thickness of p-type AlGaN barrier layers and p-type GaN layer is 300nm；
(2) ultraviolet soft nanometer embossing is used, the orderly of large area is formed on ultra-violet curing glue-line using soft template
Nm cylinder array, a diameter of 350nm of nm cylinder, the cycle is 600nm, by six side's symmetric arrays；
(3) reactive ion beam etching technique is used, CHF is passed through3And O2Mixed gas etch ultra-violet curing glue-line remnants
Part, then with uv-curable glue as mask, using RIE technologies, is passed through O2PMMA layers is performed etching, by nano column array knot
Structure is transferred to PMMA layers, exposes insulating barrier；
(4) Ni metal films are deposited with InGaN/GaN SQW epitaxial wafers surface using electron beam evaporation platform, thickness is
10nm, acetone soln immersion is placed in by the epitaxial wafer of metal-plated membrane, and additional ultrasound is peeled off, and PMMA layers of stripping obtains marking in p
The large-area ordered metal nano post array on type GaN layer surface；
(5) inductively coupled plasma etching technology is used, Cl is passed through2With the mixed gas of Ar, anisotropic etching p-type
GaN layer, p-type AlGaN barrier layers, InGaN/GaN mqw active layers, n-type GaN layer, form and run through p-type GaN layer, p-type AlGaN
Barrier layer, InGaN/GaN mqw active layers, are deep to the nano column array of n-type GaN layer, and sample is placed on into inorganic acid solution
Middle water-bath removes etching injury, then removes the insulating barrier of remnants；
(6) on silicon chip 4, using plasma enhancing chemical vapor deposition method deposition SiO2Layer 5, forms SiO2- S is served as a contrast
Bottom, SiO2Thickness degree is 200nm；
(7) electron beam evaporation metal is used, in SiO2Layer surface deposition Ag metal levels 6, sedimentation rate<3nm/min, metal
The total thickness of layer is 23nm, surface roughness<0.1nm；
(8) using plasma enhancing chemical vapor deposition method or atomic layer deposition method grow SiO in layer on surface of metal2It is super
Thin oxide layer 7, growth rate<1nm/min, thickness is 6nm, surface roughness<0.1nm；
(9) nano column array that step (5) is obtained is placed in ethanol, mechanically decoupled and dispersion is carried out using ultrasonic vibration
The suspension of InGaN/GaN SQWs nano-pillar 8 is obtained, then suspension is added dropwise on the substrate prepared by step (8), finally
Solvent on substrate is evaporated by baking, makes that nano-pillar is scattered to be distributed on substrate, InGaN/GaN SQW nano-pillars
Highly it is 2.2 μm.
(10) MUTOS structures are excited using optical pumping, observes produce lasing phenomenon at room temperature, using surface phasmon coupling
Enhancement effect is closed, can cause that threshold densities are greatly reduced, optical mode co-volume greatly compresses diminution.
Embodiment 2
The preparation method of the composite construction nano laser of this GaN base metal-ultrathin oxide-semiconductor, its step bag
Include：
(1) one layer of SiC insulating barrier is grown on InGaN/GaN SQW epitaxial wafers, by PMMA glue and uv-curable glue according to
Secondary to be spin-coated on surface of insulating layer, PMMA glue thickness is 600nm, and uv-curable glue thickness is 300nm, outside InGaN/GaN SQWs
In prolonging piece, x=0.35, mqw active layer emission wavelength is in 530nm, the periodicity of SQW 15, p type AlGaN barrier layers
It is 500nm with the gross thickness of p-type GaN layer；
(2) ultraviolet soft nanometer embossing is used, the orderly of large area is formed on ultra-violet curing glue-line using soft template
Nanometer cylindroid array, the cylindroid major diameter of nanometer is 240nm, and minor axis diameter is 160nm, and the cycle is 550nm, by six sides
Symmetric arrays；
(3) reactive ion beam etching technique is used, CHF is passed through3And O2Mixed gas etch ultra-violet curing glue-line remnants
Part, then with uv-curable glue as mask, using RIE technologies, is passed through O2PMMA layers is performed etching, by nano column array knot
Structure is transferred to PMMA layers, exposes insulating barrier；
(4) Cr metal films are deposited with InGaN/GaN SQW epitaxial wafers surface using electron beam evaporation platform, thickness is
50nm, acetone soln immersion is placed in by the epitaxial wafer of metal-plated membrane, and additional ultrasound is peeled off, and PMMA layers of stripping obtains marking in p
The large-area ordered metal nano post array on type GaN layer surface；
(5) inductively coupled plasma etching technology is used, Cl is passed through2With the mixed gas of Ar, anisotropic etching p-type
GaN layer, p-type AlGaN barrier layers, InGaN/GaN mqw active layers, n-type GaN layer, form and run through p-type GaN layer, p-type AlGaN
Barrier layer, InGaN/GaN mqw active layers, are deep to the nano column array of n-type GaN layer, and sample is placed on into inorganic alkali solution
Middle water-bath removes etching injury, then removes the insulating barrier of remnants；
(6) on silicon chip, using plasma enhancing chemical vapor deposition method deposition SiO2Layer, forms SiO2- Si is served as a contrast
Bottom, SiO2Thickness degree is 400nm；
(7) electron beam evaporation metal is used, in SiO2Layer surface depositing Al metal level, sedimentation rate<3nm/min, metal
The total thickness of layer is 28nm, surface roughness<0.1nm；
(8) using plasma enhancing chemical vapor deposition method or atomic layer deposition method grow Al in layer on surface of metal2O3It is super
Thin oxide layer, growth rate<1nm/min, thickness is 12nm, surface roughness<0.1nm；
(9) nano column array that step (5) is obtained is placed in ethylene glycol, carries out mechanically decoupled using ultrasonic vibration and divide
Dissipate and obtain InGaN/GaN SQW nano-pillar suspensions, then suspension is added dropwise on the substrate prepared by step (8), most
The solvent on substrate is evaporated by baking afterwards, makes that nano-pillar is scattered to be distributed on substrate, InGaN/GaN SQWs nanometer
Pillar height degree is 2.8 μm.
(10) geometrical relationship of MUTOS structures is observed, when major axis and the ultrathin oxide layer/metal stratum boundary of oval nano-pillar
When face is parallel, MUTOS structures are excited using optical pumping, lasing phenomenon is observed at room temperature, realize that the nanometer of single-mode laser transmitting swashs
Light device.
Embodiment 3
The preparation method of the composite construction nano laser of this GaN base metal-ultrathin oxide-semiconductor, its step bag
Include：
(1) one layer of SiC insulating barrier is grown on InGaN/GaN SQW epitaxial wafers, by PMMA glue and uv-curable glue according to
Secondary to be spin-coated on surface of insulating layer, PMMA glue thickness is 400nm, and uv-curable glue thickness is 150nm, outside InGaN/GaN SQWs
In prolonging piece, x=0.20, mqw active layer emission wavelength is in 480nm, the periodicity of SQW 12, p-type AlGaN barrier layers
It is 400nm with the gross thickness of p-type GaN layer；
(2) ultraviolet soft nanometer embossing is used, the orderly of large area is formed on ultra-violet curing glue-line using soft template
Nanometer cylindroid array, the cylindroid major diameter of nanometer is 240nm, and minor axis diameter is 160nm, and the cycle is 550nm, by six sides
Symmetric arrays；
(3) reactive ion beam etching technique is used, CHF is passed through3And O2Mixed gas etch ultra-violet curing glue-line remnants
Part, then with uv-curable glue as mask, using RIE technologies, is passed through O2PMMA layers is performed etching, by nano column array knot
Structure is transferred to PMMA layers, exposes insulating barrier；
(4) Cr metal films are deposited with InGaN/GaN SQW epitaxial wafers surface using electron beam evaporation platform, thickness is
30nm, is placed in the epitaxial wafer of metal-plated membrane acetone soln immersion or additional ultrasound is peeled off, and PMMA layers of stripping obtains marking in p
The large-area ordered metal nano post array on type GaN layer surface；
(5) inductively coupled plasma etching technology is used, Cl is passed through2With the mixed gas of Ar, anisotropic etching p-type
GaN layer, p-type AlGaN barrier layers, InGaN/GaN mqw active layers, n-type GaN layer, form and run through p-type GaN layer, p-type AlGaN
Barrier layer, InGaN/GaN mqw active layers, are deep to the nano column array of n-type GaN layer, and sample is placed on into inorganic alkali solution
Middle water-bath removes etching injury, then removes the insulating barrier of remnants；
(6) on silicon chip, using plasma enhancing chemical vapor deposition method deposition SiO2Layer, forms SiO2- Si is served as a contrast
Bottom, SiO2Thickness degree is 300nm；
(7) electron beam evaporation metal is used, in SiO2Layer surface deposits Au metal levels, sedimentation rate<3nm/min, metal
The total thickness of layer is 25nm, surface roughness<0.1nm；
(8) using plasma enhancing chemical vapor deposition method or atomic layer deposition method grow Al in layer on surface of metal2O3It is super
Thin oxide layer, growth rate<1nm/min, thickness is 9nm, surface roughness<0.1nm；
(9) nano column array that step (5) is obtained is placed in ethylene glycol, carries out mechanically decoupled using ultrasonic vibration and divide
Dissipate and obtain InGaN/GaN SQW nano-pillar suspensions, then suspension is added dropwise on the substrate prepared by step (8), most
The solvent on substrate is evaporated by baking afterwards, makes that nano-pillar is scattered to be distributed on substrate, InGaN/GaN SQWs nanometer
Pillar height degree is 2.6 μm.
(10) geometrical relationship of MUTOS structures is observed, when short axle and the ultrathin oxide layer/metal stratum boundary of oval nano-pillar
When face is parallel, MUTOS structures are excited using optical pumping, lasing phenomenon is observed at room temperature, realize that the nanometer of multi-mode laser transmitting swashs
Light device.
Embodiment 4
The preparation method of the composite construction nano laser of this GaN base metal-ultrathin oxide-semiconductor, its step bag
Include：
(1) one layer of SiC insulating barrier is grown on InGaN/GaN SQW epitaxial wafers, by PMMA glue and uv-curable glue according to
Secondary to be spin-coated on surface of insulating layer, PMMA glue thickness is 400nm, and uv-curable glue thickness is 150nm, outside InGaN/GaN SQWs
In prolonging piece, x=0.20, mqw active layer emission wavelength is in 480nm, the periodicity of SQW 12, p-type AlGaN barrier layers
It is 400nm with the gross thickness of p-type GaN layer；
(2) ultraviolet soft nanometer embossing is used, the orderly of large area is formed on ultra-violet curing glue-line using soft template
Nanometer cylindroid array, the cylindroid major diameter of nanometer is 400nm, and minor axis diameter is 300nm, and the cycle is 550nm, by six sides
Symmetric arrays；
(3) reactive ion beam etching technique is used, CHF is passed through3And O2Mixed gas etch ultra-violet curing glue-line remnants
Part, then with uv-curable glue as mask, using RIE technologies, is passed through O2PMMA layers is performed etching, by nano column array knot
Structure is transferred to PMMA layers, exposes insulating barrier；
(4) Cr metal films are deposited with InGaN/GaN SQW epitaxial wafers surface using electron beam evaporation platform, thickness is
30nm, is placed in the epitaxial wafer of metal-plated membrane acetone soln immersion or additional ultrasound is peeled off, and PMMA layers of stripping obtains marking in p
The large-area ordered metal nano post array on type GaN layer surface；
(5) inductively coupled plasma etching technology is used, Cl is passed through2With the mixed gas of Ar, anisotropic etching p-type
GaN layer, p-type AlGaN barrier layers, InGaN/GaN mqw active layers, n-type GaN layer, form and run through p-type GaN layer, p-type AlGaN
Barrier layer, InGaN/GaN mqw active layers, are deep to the nano column array of n-type GaN layer, and sample is placed on into inorganic alkali solution
Middle water-bath removes etching injury, then removes the insulating barrier of remnants；
(6) on silicon chip, using plasma enhancing chemical vapor deposition method deposition SiO2Layer, forms SiO2- Si is served as a contrast
Bottom, SiO2Thickness degree is 300nm；
(7) electron beam evaporation metal is used, in SiO2Layer surface deposits Au metal levels, sedimentation rate<3nm/min, metal
The total thickness of layer is 25nm, surface roughness<0.1nm；
(8) using plasma enhancing chemical vapor deposition method or atomic layer deposition method grow Al in layer on surface of metal2O3It is super
Thin oxide layer, growth rate<1nm/min, thickness is 9nm, surface roughness<0.1nm；
(9) nano column array that step (5) is obtained is placed in ethylene glycol, carries out mechanically decoupled using ultrasonic vibration and divide
Dissipate and obtain InGaN/GaN SQW nano-pillar suspensions, then suspension is added dropwise on the substrate prepared by step (8), most
The solvent on substrate is evaporated by baking afterwards, makes that nano-pillar is scattered to be distributed on substrate, InGaN/GaN SQWs nanometer
Pillar height degree is 2.6 μm.
(10) geometrical relationship of MUTOS structures is observed, when short axle and the ultrathin oxide layer/metal stratum boundary of oval nano-pillar
When face is parallel, MUTOS structures are excited using optical pumping, lasing phenomenon is observed at room temperature, realize that the nanometer of multi-mode laser transmitting swashs
Light device.
Embodiment 5
The preparation method of the composite construction nano laser of this GaN base metal-ultrathin oxide-semiconductor, its step bag
Include：
(1) one layer of SiC insulating barrier is grown on InGaN/GaN SQW epitaxial wafers, by PMMA glue and uv-curable glue according to
Secondary to be spin-coated on surface of insulating layer, PMMA glue thickness is 400nm, and uv-curable glue thickness is 150nm, outside InGaN/GaN SQWs
In prolonging piece, x=0.12, mqw active layer emission wavelength is in 430nm, the periodicity of SQW 12, p-type AlGaN barrier layers
It is 400nm with the gross thickness of p-type GaN layer.
(2) ultraviolet soft nanometer embossing is used, the orderly of large area is formed on ultra-violet curing glue-line using soft template
Nano-hexagonal post array, the circumscribed circle diameter of nano-hexagonal post is 100nm, and the cycle is 550nm, by six side's symmetric arrays；
(3) reactive ion beam etching technique is used, CHF is passed through3And O2Mixed gas etch ultra-violet curing glue-line remnants
Part, then with uv-curable glue as mask, using RIE technologies, is passed through O2PMMA layers is performed etching, by nano column array knot
Structure is transferred to PMMA layers, exposes insulating barrier；
(4) Cr metal films are deposited with InGaN/GaN SQW epitaxial wafers surface using electron beam evaporation platform, thickness is
30nm, is placed in the epitaxial wafer of metal-plated membrane acetone soln immersion or additional ultrasound is peeled off, and PMMA layers of stripping obtains marking in p
The large-area ordered metal nano post array on type GaN layer surface；
(5) inductively coupled plasma etching technology is used, Cl is passed through2With the mixed gas of Ar, anisotropic etching p-type
GaN layer, p-type AlGaN barrier layers, InGaN/GaN mqw active layers, n-type GaN layer, form and run through p-type GaN layer, p-type AlGaN
Barrier layer, InGaN/GaN mqw active layers, are deep to the nano column array of n-type GaN layer, and sample is placed on into inorganic alkali solution
Middle water-bath removes etching injury, then removes the insulating barrier of remnants；
(6) on silicon chip, using plasma enhancing chemical vapor deposition method deposition SiO2Layer, forms SiO2- Si is served as a contrast
Bottom, SiO2Thickness degree is 300nm；
(7) electron beam evaporation metal is used, in SiO2Layer surface deposits Au metal levels, sedimentation rate<3nm/min, metal
The total thickness of layer is 25nm, surface roughness<0.1nm；
(8) using plasma enhancing chemical vapor deposition method or atomic layer deposition method grow Al in layer on surface of metal2O3It is super
Thin oxide layer, growth rate<1nm/min, thickness is 9nm, surface roughness<0.1nm；
(9) nano column array that step (5) is obtained is placed in ethanol, mechanically decoupled and dispersion is carried out using ultrasonic vibration
InGaN/GaN SQW nano-pillar suspensions are obtained, then suspension is added dropwise on the substrate prepared by step (8), finally
Solvent on substrate is evaporated by baking, makes that nano-pillar is scattered to be distributed on substrate, InGaN/GaN SQW nano-pillars
Highly it is 2.4 μm.
(10) MUTOS structures are excited using optical pumping, lasing phenomenon is observed at room temperature, coupled using surface phasmon and increased
It is potent to answer, can cause to produce laser threshold density to be greatly reduced, optical mode co-volume greatly compresses diminution, realizes multi-mode laser
The nano laser of transmitting.
Claims (9)
1. a kind of composite construction nano laser of GaN base metal-ultrathin oxide-semiconductor, is measured by substrate and InGaN/GaN
Sub- trap nano-pillar composition, substrate structure includes successively from bottom to top：
One SiO2- Si substrates；
One evaporation is in SiO2Metal level on-Si substrates；
One growth ultrathin oxide layer on the metal layer；
The InGaN/GaN SQWs nano-pillar is positioned over ultrathin oxide layer surface, and its structure includes successively：
One Sapphire Substrate layer；
One is grown in the n-type GaN layer on substrate layer；
One is grown in the In in n-type GaN layerxGa1-xN/GaN mqw active layers；
One is grown in InxGa1-xP-type AlGaN barrier layers and p-type GaN layer on N/GaN mqw active layers.
2. the composite construction nano laser of GaN base metal-ultrathin oxide-semiconductor according to claim 1, it is special
Levy and be：The x scopes：0.12≤x≤0.35, mqw active layer emission wavelength is in 430nm to 530nm, the week of SQW
The gross thickness of issue 10~15, p-type AlGaN barrier layers and p-type GaN layer is 300~500nm.
3. the composite construction nano laser of GaN base metal-ultrathin oxide-semiconductor according to claim 1 and 2,
It is characterized in that：The InGaN/GaN SQWs nano-pillar is cylinder, cylindroid or square column, and maximum gauge is 100~400nm,
Highly it is 2.2~2.8 μm.
4. the composite construction nano laser of GaN base metal-ultrathin oxide-semiconductor according to claim 3, it is special
Levy and be：The ultrathin oxide is SiO2、Al2O3Or HfO2, ultrathin oxide thickness degree is 6~12nm, surface roughness
<0.1nm。
5. the composite construction nano laser of GaN base metal-ultrathin oxide-semiconductor according to claim 4, it is special
Levy and be：The metal of the metal level is selected from Ag, Au or Al, and thickness is 23~28nm, surface roughness<0.1nm.
6. the composite construction nano laser of GaN base metal-ultrathin oxide-semiconductor according to claim 5, it is special
Levy and be：The SiO2- Si substrates are by silicon chip and SiO2Layer composition, the SiO2Thickness degree is 200~400nm.
7. a kind of preparation method of the composite construction nano laser of GaN base metal-ultrathin oxide-semiconductor, its step bag
Include：
(1) layer insulating is grown on InGaN/GaN SQW epitaxial wafers, PMMA glue and uv-curable glue is spin-coated on successively
Surface of insulating layer；
(2) ultraviolet soft nanometer embossing is used, the ordered nano of large area is formed on ultra-violet curing glue-line using soft template
Post array；
(3) reactive ion beam etching technique is used, CHF is passed through3And O2Mixed gas etch ultra-violet curing glue-line remaining portion
Point, then with uv-curable glue as mask, using RIE technologies, it is passed through O2PMMA layers is performed etching, by nano-pillar array structure
PMMA layers is transferred to, exposes insulating barrier；
(4) using electron beam evaporation platform in InGaN/GaN SQW epitaxial wafers surface deposited metal film, by the outer of metal-plated membrane
Prolong piece and be placed in acetone soln immersion, additional ultrasound is peeled off, and peeling off the large area for obtaining marking on p-type GaN layer surface for PMMA layers has
Sequence metal nano post array；
(5) inductively coupled plasma etching technology is used, Cl is passed through2With the mixed gas of Ar, anisotropic etching p-type GaN
Layer, p-type AlGaN barrier layers, InGaN/GaN mqw active layers, n-type GaN layer, form and are hindered through p-type GaN layer, p-type AlGaN
Barrier, InGaN/GaN mqw active layers, are deep to the nano column array of n-type GaN layer, and sample is placed on into inorganic acid or inorganic
Water-bath removal etching injury, then removes the insulating barrier of remnants in aqueous slkali；
(6) on silicon chip, using plasma enhancing chemical vapor deposition method deposition SiO2Layer, forms SiO2- Si substrates；
(7) electron beam evaporation metal is used, in SiO2Layer surface deposited metal layer, sedimentation rate<3nm/min；
(8) using plasma enhancing chemical vapor deposition method or atomic layer deposition method grow ultrathin oxide in layer on surface of metal
Layer, growth rate<1nm/min；
(9) nano column array that step (5) is obtained is placed in organic solution, mechanically decoupled and dispersion is carried out using ultrasonic vibration
InGaN/GaN SQW nano-pillar suspensions are obtained, then suspension is added dropwise on the substrate prepared by step (8), finally
Solvent on substrate is evaporated by baking, makes that nano-pillar is scattered to be distributed on substrate.
8. the system of the composite construction nano laser of GaN base metal-ultrathin oxide-semiconductor according to claim 7
Preparation Method, it is characterised in that：The insulating barrier is SiO2Layer or SiC layer.
9. the system of the composite construction nano laser of GaN base metal-ultrathin oxide-semiconductor according to claim 8
Preparation Method, it is characterised in that：The organic solution is ethanol or ethylene glycol.
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