CN106784277A - The thermoelectric pile sensing structure of integration capacitance - Google Patents
The thermoelectric pile sensing structure of integration capacitance Download PDFInfo
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- CN106784277A CN106784277A CN201510811200.XA CN201510811200A CN106784277A CN 106784277 A CN106784277 A CN 106784277A CN 201510811200 A CN201510811200 A CN 201510811200A CN 106784277 A CN106784277 A CN 106784277A
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- 230000010354 integration Effects 0.000 title claims abstract description 46
- 230000006698 induction Effects 0.000 claims abstract description 85
- 238000000926 separation method Methods 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 32
- 229920005591 polysilicon Polymers 0.000 claims description 32
- 239000004065 semiconductor Substances 0.000 claims description 31
- 239000003990 capacitor Substances 0.000 claims description 21
- 239000000126 substance Substances 0.000 claims description 18
- 239000011230 binding agent Substances 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000005192 partition Methods 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- -1 polyethylene Polymers 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000004743 Polypropylene Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 208000002925 dental caries Diseases 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 230000036413 temperature sense Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 230000005678 Seebeck effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N10/80—Constructional details
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples
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Abstract
The present invention proposes a kind of thermoelectric pile sensing structure of integration capacitance.The thermoelectric pile sensing structure of integration capacitance is included：Substrate, infrared induction unit and separation (partition) structure.Infrared induction unit is located on substrate, and infrared induction unit has the first induction structure and the second induction structure, wherein the first induction structure and the second induction structure one end near one another are hot junction (Hot junction).Separation structure is a cold end (Cold junction) around infrared induction unit, wherein separation structure and the first induction structure one end near one another, and separation structure is another cold end with second induction structure one end near one another.Wherein, the temperature difference between hot junction and cold end produces voltage difference signal, and wherein, a part for separation structure constitutes an at least electric capacity.
Description
Technical field
The present invention relates to a kind of thermoelectric pile sensing structure of integration capacitance, particularly relate to one kind be integrated with MIM capacitor and/or
PIP capacitor, with save chip area and reduce noise integration capacitance thermoelectric pile sensing structure.
Background technology
Refer to Fig. 1 and compares figure 2.The thermoelectric pile sensing structure of Fig. 1 display prior arts is applied to temperature sensing module
Functional block diagram.The profile of the thermoelectric pile sensing structure of Fig. 2 display prior arts.The temperature sensing module of prior art
100 comprising an existing thermoelectric pile sensing structure 10, a noise filter 81, a noise filter 82, a difference amplifier Amp,
One analog-digital converter ADC and a temperature sensor 80.Thermoelectric pile sensing structure 10 produces an electricity by the change of temperature difference
Pressure difference signal VDS, in this way temperature sensor.After voltage difference signal output produced by thermoelectric pile sensing structure 10, by making an uproar
The treatment of acoustical filter 81 and noise filter 82 and be input into difference amplifier Amp.After difference amplifier Amp processes signal
It is input into analog-digital converter ADC.Analog-digital converter ADC also receives the temperature signal that temperature sensor 80 is exported
TS.Noise filter 81 and noise filter 82 have electric capacity C1 and electric capacity C2 respectively.Additionally, temperature sensing module 100 is still wrapped
Containing an electric capacity C3.Herein in the prior art, electric capacity C1, electric capacity C2, thermoelectric pile sensing structure 10 are separate, each self-styled three independences
The part of dress.
Refer to Fig. 2.Existing thermoelectric pile sensing structure 10 is included：One substrate 11；One infrared induction unit 16, positioned at base
On plate 11；Infrared induction unit 16 has one first induction structure 161 and one second induction structure 162, wherein the first sensing
The induction structure 162 of structure 161 and second one end near one another is a hot junction (Hot junction) H；And one separate
(partition) structure 15, around infrared induction unit 16, wherein separation structure 15 and the first induction structure 161 phase each other
Near one end is a cold end (Cold junction) C, and the one end near one another with the second induction structure 162 of separation structure 15 is
Another cold end C, wherein, the temperature difference between hot junction H and cold end C produces a voltage difference signal VDS.To make infrared induction unit 16
More accurately sensor signal, this prior art also sets up a filter layer 14, and thermoelectric pile sensing is connected to by a binder course 13
The body of structure 10.
When this existing thermoelectric pile sensing structure 10 is made with CMOS technology, separation structure 15 generally comprises polysilicon layer
Poly1, multilayer metal level M1-M4 (citing is shown as four layers, but unlimited number in for four) and multilayer channel layer V.The
One induction structure 161 and the second induction structure 162 are made up of metal level M1 with polysilicon layer poly1.Between each electrical structure with
Dielectric substance layer 12 insulate.The transmission of voltage difference signal VDS is then reached by transistor circuit 17.
Herein in the prior art, as it was previously stated, can be set on the path of thermoelectric pile sensing structure 10 to circuit electric capacity C1,
C2 to cross noise filtering, and electric capacity C1, electric capacity C2, the three of thermoelectric pile sensing structure 10 to be three independences separate, each encapsulation zero
Part.The shortcoming of this prior art is that integrated circuit relatively consumes area and relatively costly.
In view of this, the present invention is directed to above-mentioned the deficiencies in the prior art, proposes that one kind is integrated with MIM capacitor and/or PIP
Electric capacity, with save chip area and reduce noise integration capacitance thermoelectric pile sensing structure.
The content of the invention
It is an object of the invention to overcome the deficiencies in the prior art and defect, a kind of thermoelectric pile sensing of integration capacitance is proposed
Structure, can integrate MIM capacitor and/or PIP capacitor, to save chip area and reduce noise.
It is the just wherein viewpoint speech up to above-mentioned purpose, the invention provides a kind of thermoelectric pile sensing structure of integration capacitance,
Comprising：One substrate；One infrared induction unit, on the substrate, it is regarded from the profile of the cutting perpendicularly substrate, and this is red
Outside line sensing unit has one first induction structure and one second induction structure, wherein first induction structure and second sensing
Structure one end near one another is a hot junction (Hot junction)；And one separate (partition) structure, it is infrared around this
Line sensing unit, the wherein separation structure are a cold end (Cold with first induction structure one end near one another
Junction), the separation structure and second induction structure one end near one another are another cold end, between the hot junction and the cold end
Temperature difference produce a voltage difference signal, and the separation structure a part constitute an at least electric capacity.
In a kind of preferably implementation kenel, the electric capacity is a metal-insulator-metal type (Metal-Insulator-
Metal, MIM) electric capacity or polycrystalline silicon-on-insulator-polysilicon (Polysilicon-Insulator-Polysilicon, PIP)
Electric capacity.
In above-mentioned preferably implementation kenel, the separation structure includes stacked multiple metal levels and multiple channel layers, and
The MIM capacitor includes the upper bottom crown being made up of metal level.
Preferably implement kenel above-mentioned, the separation structure includes stacked multiple metal levels, multiple channel layers and many
Individual polysilicon layer, and the PIP capacitor includes the upper bottom crown being made up of polysilicon layer.
In a kind of preferably implementation kenel, the thermoelectric pile sensing structure of integration capacitance is also included：One dielectric substance layer, is located at
On the substrate, wherein the infrared induction unit is formed among the dielectric substance layer with the separation structure.
In above-mentioned preferably implementation kenel, the thermoelectric pile sensing structure of integration capacitance is also included：One binder course, positioned at this
On dielectric substance layer；And a filter layer, be used to filter signal in addition to infra red, the filter layer by the binder course with should
Dielectric substance layer is connected.
Preferably implement kenel a kind of, the temperature difference between the hot junction and the cold end process via a transistor circuit and
The voltage difference signal is produced, the transistor circuit is formed on the substrate.
It is up to above-mentioned purpose, with regard to another viewpoint speech, the invention provides a kind of thermoelectric pile sensing structure of integration capacitance, bag
Contain：One substrate, with a cavity；One infrared induction unit, on the substrate, the infrared induction unit has one first
One end that semiconductor stack stack structure, wherein the first semiconductor stack stack structure are located at the cavity is a hot junction；And one separate
Structure, positioned at the infrared induction unit periphery, the wherein separation structure is near one another with the first semiconductor stack stack structure
One end is a cold end, and the temperature difference between the hot junction and the cold end produces a voltage difference signal, the part composition of the separation structure
An at least electric capacity.
Preferably implement kenel a kind of, at least one of film layer of the separation structure and first semiconductor stack
The film layer of structure is identical film layer.
In a kind of preferably implementation kenel, an at least electric capacity is a metal-insulator-metal type (Metal-
Insulator-Metal, MIM) electric capacity or polycrystalline silicon-on-insulator-polysilicon (Polysilicon-Insulator-
Polysilicon, PIP) electric capacity.
In a kind of preferably implementation kenel, the first semiconductor stack stack structure includes the heat transfer material that two-layer is interconnected
Material, wherein, the Seebeck coefficients of one layer of heat conducting material therein are different from another layer of heat conducting material therein
Seebeck coefficients.
In a kind of preferably implementation kenel, the thermoelectric pile sensing structure of integration capacitance is also included：One second semiconductor stack
Stack structure, wherein the first semiconductor stack stack structure and the second semiconductor stack stack structure one end near one another are the hot junction,
The separation structure and the first semiconductor stack stack structure one end near one another are the cold end, and the separation structure the second half is led with this
Body stacked structure one end near one another is another cold end.
Preferably implement kenel a kind of, at least one of film layer of the separation structure and second semiconductor stack
The film layer of structure is identical film layer.
Below by way of specific embodiment elaborate, when be easier to understand the purpose of the present invention, technology contents, feature and its
The effect reached.
Brief description of the drawings
The thermoelectric pile sensing structure of Fig. 1 display prior arts is applied to the functional block diagram of temperature sensing module；
The profile of the thermoelectric pile sensing structure of Fig. 2 display prior arts；
Fig. 3 shows that thermoelectric pile sensing structure of the invention is applied to the functional block diagram of temperature sensing module；
Fig. 4 shows the profile of the first embodiment of the thermoelectric pile sensing structure of integration capacitance of the invention；
Fig. 5 shows the profile of the second embodiment of the thermoelectric pile sensing structure of integration capacitance of the invention；
Fig. 6 shows the profile of the 3rd embodiment of the thermoelectric pile sensing structure of integration capacitance of the invention.
Symbol description in figure
(prior art)
100 temperature sensing modules
10 thermoelectric pile sensing structures
11 substrates
11A cavitys
12 dielectric substance layers
13 binder courses
14 filter layers
15 separation structures
16 infrared induction units
161 first induction structures
162 second induction structures
17 transistor circuits
C cold ends
M1~M4 metal levels
Poly1 polysilicon layers
H hot junctions
V channel layers
80 temperature sensors
81 noise filters
82 noise filters
C1~C3 electric capacity
Amp difference amplifiers
ADC analog-digital converters
TS temperature signals
VDS voltage difference signals
(present invention)
200 temperature sensing modules
20th, the thermoelectric pile sensing structure of 30,40 integration capacitances
11 substrates
11A cavitys
12 dielectric substance layers
13 binder courses
14 filter layers
25 separation structures
25A MIM capacitors
26 separation structures
26B PIP capacitors
27 separation structures
16 infrared induction units
161 first induction structures
162 second induction structures
17 transistor circuits
C cold ends
M1~M4 metal levels
M3A metal levels
Poly1 polysilicon layers
Poly2 polysilicon layers
H hot junctions
V channel layers
71 noise filters
72 noise filters
80 temperature sensors
C1~C3 electric capacity
Amp difference amplifiers
ADC analog-digital converters
TS temperature signals
VDS voltage difference signals
Specific embodiment
For the present invention foregoing and other technology contents, feature and effect, in following cooperation reference schema are preferable
In the detailed description of embodiment, can clearly present.Schema in the present invention belongs to signal, be mostly intended to represent each device with
And the function relation between each element, then and not according to ratio drawn as shape, thickness and width.
Refer to Fig. 3 and compares figure 4.Fig. 3 shows that thermoelectric pile sensing structure of the invention is applied to temperature sensing module
Functional block diagram.Fig. 4 shows the profile of the first embodiment of the thermoelectric pile sensing structure of integration capacitance of the invention.This implementation
Thermoelectric pile sensing structure 20 of the temperature sensing module 200 of example comprising an integration capacitance, a difference amplifier Amp, a simulation number
Word converter ADC and a temperature sensor 80.From unlike the temperature sensing module 100 of prior art：The temperature of prior art
Degree sensing module 100 sets noise filter 13 and noise filter 14 (i.e. in addition outside existing thermoelectric pile sensing structure 10
Thermoelectric pile sensing structure 10, electric capacity C1, electric capacity C2 are three separately manufactured, individual packages elements).However, the present embodiment
Noise filter 13 and noise filter 14 are incorporated into thermoelectric pile sensing structure 20 by the thermoelectric pile sensing structure 20 of integration capacitance
It is central.Wherein, noise filter 13 and noise filter 14 have electric capacity C1 and electric capacity C2 respectively.This means, the heat of the present embodiment
Pile sensing structure 20 incorporates how electric capacity C1 and electric capacity C2 (are integrated within single encapsulation on electric capacity C1 and electric capacity C2
In the semiconductor structure feature and details of thermoelectric pile sensing structure 20, it is detailed later).
The design principle of thermoelectric pile sensing structure 20 is using Seebeck effects.If its principle is conductive material, inside is deposited
In different temperature differences, then can produce different thermo-electromotive forcves, if therefore give material two ends (hot junction H i.e. as shown in Figure 4 with
Cold end C) different temperature, there will be voltage difference to produce, and temperature sense is carried out by using different conductive materials, can be with
Amplify this voltage difference signal.In short, the thermoelectric pile sensing structure 20 of the integration capacitance of the present embodiment is by hot junction H and cold end C
The change of the temperature difference between (as shown in Figure 4) produces voltage difference signal VDS (as shown in Figure 3), in this way temperature sensor.
Noise filter 13 and make an uproar that voltage difference signal VDS produced by thermoelectric pile sensing structure 20 is integrated via inside
After the treatment of acoustical filter 14, exported.The voltage difference signal VDS of output is input to difference amplifier Amp.Difference amplifier
Amp is input into analog-digital converter ADC after signal is processed.To make signal stabilization, in two inputs of difference amplifier Amp
Between can be set an electric capacity C3.In addition to be such as, but not limited to separately to receive the institute of temperature sensor 80 defeated for analog-digital converter ADC
The temperature signal TS for going out is used as reference.The circuit function mode of temperature sensing module is prior art, is not described in detail herein.
Refer to Fig. 4.The thermoelectric pile sensing structure 20 of the integration capacitance of the present embodiment is included：One substrate 11, an infrared ray
Sensing unit 16, one separates (partition) structure 25, a binder course 13 and a filter layer 14.Substrate 11 for example but is not limited
In being silicon substrate.Substrate 11 has a cavity 11A.Infrared induction unit 16 is located on substrate 11, may be used to sense infrared ray.
In one embodiment, infrared induction unit 16 is used to sense far infrared.
In one embodiment, it is regarded from the profile (such as Fig. 4) of the cutting perpendicularly substrate, infrared induction unit 16
There can be at least one one the first induction structures 162 of induction structure 161 and 1 second.As shown in figure 4, the first induction structure 161
Can be such as but not limited to one first semiconductor stack stack structure, in one embodiment, it has at least two-layer heat conducting material, and
The Seebeck coefficients of this two-layer heat conducting material are different from each other.In one embodiment, the first induction structure 161 is included, by up to
Under, such as but not limited to, an a metal level M1 and polysilicon layer Poly1.As shown in figure 4, the second induction structure 162 is for example but not
It is limited to be one second semiconductor stack stack structure, in one embodiment, it has at least two-layer heat conducting material, and this two-layer is hot
The Seebeck coefficients of conductive material are different from each other.In one embodiment, the first induction structure 161 is included, from top to bottom, for example
But it is not limited to, an a metal level M1 and polysilicon layer Poly1.The material of metal level M1 and polysilicon layer Poly1 is all heat transfer
Material, it will be appreciated, however, that the Seebeck coefficients of metal level M1 are different from the Seebeck coefficients of polysilicon layer Poly1.
In this embodiment, the first induction structure 161 and the second induction structure 162 are each other to be symmetrical arranged.In such setting, first
The induction structure 162 of induction structure 161 and second one end near one another (one end at cavity 11A) is a hot junction (Hot
junction)H.Separation structure 15 is located at the periphery of infrared induction unit 16 and around infrared induction unit 16, wherein dividing
Every the induction structure 161 of structure 25 and first one end near one another be a cold end (Cold junction) C, separation structure 25 with
Second induction structure 162 one end near one another is another cold end C.As described above, the thermoelectric pile of the integration capacitance of the present embodiment
Sensing structure 20 produces a voltage difference signal VDS by the temperature difference between hot junction H and cold end C, in this way temperature sensor.
It is worth noting that, infrared induction unit 16 must necessarily have two symmetrically arranged induction structures
(i.e. 161 and 162).In another embodiment, infrared induction unit 16 can only have an induction structure (for example but not limit
In can be the first above-mentioned semiconductor stack stack structure, i.e. the first induction structure 161).In such setting, the first induction structure
161 one end for being located at cavity 11A are hot junction (Hot junction) H.Separation structure 15 is near one another with the first induction structure 161
One end be cold end (Cold junction) C.Similarly, in such setting, as described above, the integration electricity of the present embodiment
The thermoelectric pile sensing structure 20 of appearance produces a voltage difference signal VDS by the temperature difference between hot junction H and cold end C, feels in this way
Answer temperature.In more detail, wherein in a kind of embodiment, it is regarded from profile, infrared induction unit 16 can only have one
Individual induction structure and be asymmetrical shape.Or, in another embodiment, it is seen from top view, induction structure is by foregoing
Semiconductor stack stack structure, with hot junction H extended spots as the center of circle, with cold end C as circumference around a sector or circle, this
In the case of, it is regarded from profile (such as Fig. 4), infrared induction unit 16 has two symmetrical induction structures, but two sense
Structure is answered to actually belong to the diverse location of same semiconductor stack stack structure.The above all belongs to the scope of the present invention.Additionally,
The present embodiment has dielectric substance layer 12, and it is located on substrate 11.In one embodiment, dielectric substance layer 12 such as but not limited to two
Silica (SiO2), it is in the present embodiment with as a kind of material for absorbing infra-red signal.The infrared ray of the present embodiment
Sensing unit 16 is formed among dielectric substance layer 12 with separation structure 25.
Binder course 13 is located on dielectric substance layer 12.Filter layer 14 is connected by binder course 13 with dielectric substance layer 12.Filter layer
14 can help the thermoelectric pile sensing structure 20 of integration capacitance to filter signal in addition to infra red.
Filter layer 14 allows that the ultrared temperature signal come from a certain determinand (not shown) is passed through.In an embodiment
In, the thickness of filter layer 14 such as but not limited to can be 5~15 μm.In one embodiment, the material of filter layer 14 for example but
It is not limited to be polyethylene (Polyethylene, abbreviation PE), polypropylene (Polypropylene/Polypropene, abbreviation
) or polyethylene terephthalate (Polyethylene Terephthalate, abbreviation PET) PP.The effect of filter layer 14
In addition to optical filtering, still prevent among dirty entrance thermoelectric pile sensing structure 20.
Voltage difference produced by infrared induction unit 16 can be processed via an external circuit and produce aforesaid voltage poor
Signal VDS；This outside circuit example is such as, but not limited to, a transistor circuit 17 (as shown in Figure 4), and it is formed among substrate 11.
In a better embodiment, the thermoelectric pile sensing structure 20 of the present embodiment can utilize the CMOS standards of semiconductor
Technique makes.Wherein, polysilicon, metal, the deposition of silica and etching etc. can be utilized on silicon substrate 11, crystal is constituted
Pipe circuit 17, infrared induction unit 16, separation structure 15 and dielectric substance layer 12, in rear technique, using for example but not limiting
Silicon substrate 11 is etched in back side silicon build etching technique, to form the shape of substrate 11 as shown in Figure 4, then with wafer bond
Technology binds binder course 13 and filter layer 14.
The characteristics of the present embodiment is：A part for separation structure 25 constitutes an at least electric capacity.As shown in figure 4, real one
Apply in example, separation structure can include four stacked metal levels (for example：Aluminium) M1~M4 and multiple channel layer V are (for example：Tungsten), this
Polysilicon layer outer and that one or more layers can be included (the present embodiment is shown as Poly1).But the invention is not restricted to this embodiment
Shown layer number, material, order and layout patterns, can be different numbers and material metal level and channel layer it is folded
Layer, but the tandem of lamination and layout type can have different changes (such as the top can be channel layer V).As shown in figure 4,
In one embodiment, the metal level M1 of separation structure 25 and the first induction structure 161 (the first above-mentioned semiconductor stack stack structure)
Metal level M1 be identical film layer, and the polysilicon layer Poly1 of separation structure 25 and the first induction structure 161 polysilicon layer
Poly1 is identical film layer.In one embodiment, the metal level M1 of separation structure 25 and (above-mentioned second of the second induction structure 162
Semiconductor stack stack structure) metal level M1 be identical film layer, and separation structure 25 polysilicon layer Poly1 and the second induction structure
162 polysilicon layer Poly1 is identical film layer.
Above-mentioned metal level M1~M4 and channel layer V is described using the concept of general CMOS technology, corresponding to microelectronics
In the semiconductor structure of circuit, the metal layer order in interior online (interconnection).It will be appreciated, however, that this reality
Apply in example between metal level M3 and M4, additionally comprise a metal level M3A.Metal level M4, insulating barrier (i.e. of dielectric substance layer 12
Point) and metal level M3A one metal-insulator-metal type (Metal-Insulator-Metal, MIM) electric capacity 25A of composition, by
Metal level M4 constitutes top crown and constitutes bottom crown by metal level M3A.This MIM capacitor 25A can be used as foregoing electric capacity C1 or
C2, therefore, can be incorporated within thermoelectric pile sensing structure 20 for electric capacity C1 and/or C2 by the present invention, and bulk temperature sense is greatly decreased
Survey the area and manufacturing cost of module.
Fig. 5 is refer to, the profile of the second embodiment of the thermoelectric pile sensing structure of its display integration capacitance of the invention.
The thermoelectric pile sensing structure 30 of the integration capacitance of the present embodiment senses knot similar to the thermoelectric pile of the integration capacitance of first embodiment
Structure 20, its difference is：In the thermoelectric pile sensing structure 30 of the integration capacitance of the present embodiment, as shown in figure 5, separation structure is removed
Comprising four stacked metal levels (for example：Aluminium) M1~M4, multiple channel layer V are (for example：Tungsten) outward, comprising two polysilicon layers
Poly1 and Poly2.It is complete that above-mentioned metal level M1~M4, channel layer V and polysilicon layer Poly1 and Poly2 can adopt general CMOS technology
Into, it is similar to previous embodiment, the invention is not restricted to the layer number shown in this embodiment, material, order and layout patterns.
In the embodiment shown in fig. 5, two polysilicon layer Poly1 and Poly2 constitutes a polycrystalline silicon-on-insulator-polysilicon
(Polysilicon-Insulator-Polysilicon, PIP) electric capacity 26B, be made up of polysilicon layer Poly2 top crown and by
Polysilicon layer Poly1 constitutes bottom crown.This PIP capacitor 26B can be used as foregoing electric capacity C1 or C2, therefore, the present invention can be by
Electric capacity C1 and/or C2 are incorporated within thermoelectric pile sensing structure 30, and area and the manufacture of bulk temperature sensing module is greatly decreased
Cost.
Fig. 6 is refer to, the profile of the 3rd embodiment of the thermoelectric pile sensing structure of its display integration capacitance of the invention.
The thermoelectric pile sensing structure 40 of the integration capacitance of the present embodiment senses knot similar to the thermoelectric pile of the integration capacitance of previous embodiment
Structure 20 and 30, its difference is：The separation structure 27 of thermoelectric pile sensing structure 40 includes MIM capacitor 25A and PIP capacitor 26B.
This means, the thermoelectric pile sensing structure 40 of the present embodiment had both had MIM capacitor 25A or had had PIP capacitor 26B.The knot of the present embodiment
Structure can make larger electric capacity under compared with small area.
Compared to prior art, the thermoelectric pile sensing structure 20,30,40 of the integration capacitance of the present embodiment can exempt external
The demand of electric capacity, and effectively reduce module area；Additionally, by electric capacity by it is external be changed to it is built-in, also have reduce transmitted noise effect
Really, therefore better than prior art.
Below the present invention is illustrated for preferred embodiment, the above, only it is easy to those skilled in the art
Solution present disclosure, not for limiting interest field of the invention.Under same spirit of the invention, people in the art
Member can think and various equivalence changes.For example, the number of metal level of the invention and channel layer is not limited to shown in embodiment, can be
Other numbers.All this kind, of the invention can all teach and analogize and obtain, therefore, the scope of the present invention should cover to be addressed
Other all equivalence changes.Additionally, any implementation kenel of the invention necessarily reaches all of purpose or advantage, therefore, power
Profit requires that any one also should not be as limit.
Claims (13)
1. the thermoelectric pile sensing structure of a kind of integration capacitance, it is characterised in that include：
One substrate；
One infrared induction unit, on the substrate, the infrared induction unit has one first induction structure and one second
Induction structure, wherein first induction structure and second induction structure one end near one another are a hot junction；And
One separation structure, around the infrared induction unit, the wherein separation structure is near one another with first induction structure
One end is a cold end, and the separation structure is another cold end with second induction structure one end near one another, and the hot junction is cold with this
Temperature difference between end produces a part for a voltage difference signal, the separation structure to constitute an at least electric capacity.
2. the thermoelectric pile sensing structure of integration capacitance as claimed in claim 1, wherein, the electric capacity is a metal-insulator-gold
Category MIM capacitor or polycrystalline silicon-on-insulator-polysilicon PIP capacitor.
3. the thermoelectric pile sensing structure of integration capacitance as claimed in claim 2, wherein, the separation structure includes stacked multiple
Metal level and multiple channel layers, and the MIM capacitor includes the upper bottom crown being made up of metal level.
4. the thermoelectric pile sensing structure of integration capacitance as claimed in claim 2, wherein, the separation structure includes stacked multiple
Metal level, multiple channel layers and multiple polysilicon layers, and the PIP capacitor includes the upper bottom crown being made up of polysilicon layer.
5. the thermoelectric pile sensing structure of integration capacitance as claimed in claim 1, wherein, also include：
One dielectric substance layer, on the substrate, wherein the infrared induction unit is formed at the dielectric substance layer with the separation structure
Among.
6. the thermoelectric pile sensing structure of integration capacitance as claimed in claim 5, wherein, also include：
One binder course, on the dielectric substance layer；And
One filter layer, is used to filter signal in addition to infra red, and the filter layer passes through the binder course and the dielectric substance layer phase
Even.
7. the thermoelectric pile sensing structure of integration capacitance as claimed in claim 1, wherein, the temperature difference between the hot junction and the cold end
Processed via a transistor circuit and produce the voltage difference signal, the transistor circuit is formed on the substrate.
8. the thermoelectric pile sensing structure of a kind of integration capacitance, it is characterised in that include：
One substrate, with a cavity；
One infrared induction unit, on the substrate, the infrared induction unit has one first semiconductor stack stack structure, its
In the first semiconductor stack stack structure be located at the cavity at one end be a hot junction；And
One separation structure, positioned at the infrared induction unit periphery, the wherein separation structure and the first semiconductor stack stack structure
One end near one another is a cold end, and the temperature difference between the hot junction and the cold end produces a voltage difference signal, the separation structure
A part constitutes an at least electric capacity.
9. the thermoelectric pile sensing structure of integration capacitance as claimed in claim 8, wherein, the separation structure it is at least one of
Film layer is identical film layer with the film layer of the first semiconductor stack stack structure.
10. the thermoelectric pile sensing structure of integration capacitance as claimed in claim 8, wherein, an at least electric capacity is a metal-absolutely
Edge body-metal MIM capacitor or polycrystalline silicon-on-insulator-polysilicon PIP capacitor.
The thermoelectric pile sensing structure of 11. integration capacitances as claimed in claim 8, wherein, the first semiconductor stack stack structure bag
The heat conducting material of two-layer interconnection is included, wherein, the Seebeck coefficients of one layer of heat conducting material therein are different from this its
In another layer of heat conducting material Seebeck coefficients.
The thermoelectric pile sensing structure of 12. integration capacitances as claimed in claim 8, wherein, also include：
One second semiconductor stack stack structure, wherein the first semiconductor stack stack structure and the second semiconductor stack stack structure phase each other
Near one end is the hot junction, and the separation structure is the cold end, this point with the first semiconductor stack stack structure one end near one another
Every structure and the second semiconductor stack stack structure one end near one another be another cold end.
The thermoelectric pile sensing structure of 13. integration capacitances as claimed in claim 12, wherein, at least a portion of the separation structure
The film layer of film layer and the second semiconductor stack stack structure be identical film layer.
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| CN111044157A (en) * | 2018-10-15 | 2020-04-21 | 众智光电科技股份有限公司 | Infrared sensor and thermopile sensing chip used for same |
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| TW201248128A (en) * | 2011-05-24 | 2012-12-01 | Univ Nat Kaohsiung Applied Sci | Thermopile sensing element |
| US20140015089A1 (en) * | 2011-03-25 | 2014-01-16 | St-Ericsson Sa | Differential temperature sensor and its capacitors in cmos/bicmos technology |
| CN104322053A (en) * | 2012-05-25 | 2015-01-28 | 索尼公司 | Image sensor, drive method, and electronic device |
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| US20140015089A1 (en) * | 2011-03-25 | 2014-01-16 | St-Ericsson Sa | Differential temperature sensor and its capacitors in cmos/bicmos technology |
| TW201248128A (en) * | 2011-05-24 | 2012-12-01 | Univ Nat Kaohsiung Applied Sci | Thermopile sensing element |
| CN104322053A (en) * | 2012-05-25 | 2015-01-28 | 索尼公司 | Image sensor, drive method, and electronic device |
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| CN111044157A (en) * | 2018-10-15 | 2020-04-21 | 众智光电科技股份有限公司 | Infrared sensor and thermopile sensing chip used for same |
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