CN106784229B - A kind of duplex energy-saving LED semiconductor chip and the method for reducing power consumption - Google Patents
A kind of duplex energy-saving LED semiconductor chip and the method for reducing power consumption Download PDFInfo
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- CN106784229B CN106784229B CN201710022209.1A CN201710022209A CN106784229B CN 106784229 B CN106784229 B CN 106784229B CN 201710022209 A CN201710022209 A CN 201710022209A CN 106784229 B CN106784229 B CN 106784229B
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 20
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 239000010949 copper Substances 0.000 claims abstract description 8
- 238000005215 recombination Methods 0.000 claims abstract description 6
- 230000005684 electric field Effects 0.000 claims abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- 238000007599 discharging Methods 0.000 claims description 2
- 230000008676 import Effects 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 230000000087 stabilizing effect Effects 0.000 claims 1
- 238000000904 thermoluminescence Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 2
- 230000003760 hair shine Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 241000784732 Lycaena phlaeas Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
Abstract
The present invention relates to a kind of duplex energy-saving LED semiconductor chips, it is made of ten parts, are DC power supply, conducting wire, positive copper electrode, P GaN films, GaN film, N GaN films, N GaN substrates, HfO2 films, P ZnO films, cathode copper electrode respectively.Electronics is imported by cathode copper electrode, respectively in the luminescent layer GaN film in the luminescent layer HfO2 films on right side and left side with hole-recombination and emit photon.According to thermoluminescence principle, the photon energy of HfO2 films transmitting is done work more than electric field, this portion of energy having more derives from the heat of left side luminescent layer GaN film release.The present invention proposes a kind of duplex LED semiconductor chips reducing power consumption with the method that thermoluminescence is combined using electroluminescent, to promote LED technology to the development in energy-saving direction.
Description
Technical field
The present invention relates to a kind of duplex energy-saving LED semiconductor chip and the methods for reducing power consumption, belong to electroluminescent and heat
Photoluminescence field.
Background technology
LED light is mainly combined into luminous hetero-junctions using P-type semiconductor and N-type semiconductor, utilizes answering for electronics and hole
The principle realization for closing release photon shines.Compared with incandescent lamp, there is low-power consumption, high brightness, small size, simple to install, reliable
Spend high feature.However, under low-voltage, powerful operating mode, the heat flow density of LED luminescence chips is up to 30W/cm2More than,
So that heat dissipation problem becomes bottleneck urgently to be resolved hurrily.Especially for high-power LED plane cluster package module, forced heat-exchanging
Cooling method can consume a large amount of electric energy, raise use cost.Thermoluminescence is combined with electroluminescent technology can both make up
The heat dissipation problem of LED, and the luminous power of LED can be improved.
Invention content
The present invention designs a kind of duplex energy-saving LED semiconductor chip, it is made of ten parts, is DC power supply respectively, leads
Line, positive copper electrode, P-GaN films, GaN film, N-GaN films, N-GaN substrates, HfO2Film, P-ZnO films, cathode copper
Electrode.Electronics is imported by cathode copper electrode, respectively in the luminescent layer HfO on right side2In the luminescent layer GaN film in film and left side with
Hole-recombination simultaneously emits photon.According to thermoluminescence principle, HfO2The photon energy of film transmitting is done work more than electric field, is had more
This portion of energy derives from the heat of left side luminescent layer GaN film release.
The present invention, which is proposed, to be reduced LED power consumptions with the method that thermoluminescence is combined using electroluminescent and improves the effect that shines
The method of rate, to promote LED technology to the development in energy-saving direction.
Description of the drawings
Be more fully described by referring to accompanying drawing the present invention exemplary implementation, the above and other aspect of the invention and
Advantage will become more easily clear, in the accompanying drawings：
Fig. 1 is the schematic front view of the present invention, and two kinds of luminous hetero-junctions are integrated in same LED semiconductor die on pieces,
The left side is the luminous PN junction that P-GaN/GaN/N-GaN is constituted.The right is N-GaN/HfO2The luminous PN junction that/P-ZnO is constituted.Both sides
PN junction be connected with each other by N-GaN substrates.The luminous PN junction on the left side belongs to conventional electroluminescent PN junction, electronics and hole-recombination
When will also discharge a large amount of thermal energy other than discharging photon.Thermal energy passes to the right N-GaN/HfO by substrate N-GaN2/P-
The PN junction that ZnO is constituted, due to N-GaN/HfO2/ P-ZnO has stepped electronics Well structure so that electronics and hole-recombination
When, so that photon is obtained the energy to do work more than electric field, which derives from the thermal energy obtained from the external world, therefore, Fig. 1 institutes
The duplex LED structure shown can either reduce left side LED heat burden and can provide part driving luminous thermal energy for the right LED.
Fig. 2 is the schematic top plan view of the present invention, and six PN junction chips, three, the left side are integrated on rectangle N-GaN substrates
For the PN junction that N-GaN/GaN/P-GaN is constituted, three, the right is P-ZnO/HfO2The PN junction that/N-GaN is constituted.
Specific implementation mode
Hereinafter, the present invention is more fully described with reference to the accompanying drawings, and a kind of embodiment is shown in the accompanying drawings.However,
The present invention can be implemented in many different forms, and should not be construed as limited to embodiment set forth herein.On the contrary, carrying
So that the disclosure will be thorough and complete for the embodiment, and fully conveys the scope of the present invention to people in the art
Member.
Hereinafter, exemplary embodiment of the present invention is more fully described with reference to the accompanying drawings.
Refer to the attached drawing 1~2, the realization of technical scheme of the present invention：A kind of duplex energy-saving LED semiconductor chip, it is by ten
Part forms, and is DC power supply, conducting wire, positive copper electrode, P-GaN films, GaN film, N-GaN films, N-GaN bases respectively
Plate, HfO2Film, P-ZnO films, cathode copper electrode.
DC power supply：Power supply of the present invention is constant voltage dc source (5~10V), and electric current imports LED half by positive copper electrode
Conductor chip passes back into power supply by cathode copper electrode, drives electronics directed movement.
Conducting wire：Common copper or aluminum conducting wire (0.1~0.25mm of diameter) can be used.
N-GaN substrates:It is prepared using chemical vapor deposition method, Si elements, doping is adulterated in GaN crystal growth course
Concentration is controlled in 1016~1020/cm3。
N-GaN films：It is prepared using chemical vapor deposition method, Si elements, doping is adulterated in GaN crystal growth course
Concentration is controlled in 1016~1020/cm3。
GaN film：It is prepared using chemical vapor deposition method.
P-GaN films：It is prepared using chemical vapor deposition method, Mg elements, doping is adulterated in GaN crystal growth course
Concentration is controlled in 1016~1020/cm3。
HfO2Film:It is prepared using chemical vapor deposition method, passes through metal Hf target as sputter and O2It is heavy that oxidation reaction occurs
Product is on N-GaN films.
P-ZnO films：It is prepared using chemical vapor deposition method, Mg elements, doping is adulterated in ZnO crystal growth course
Concentration is controlled in 1019~1020/cm3。
Positive copper electrode：It is obtained using physical gas-phase deposite method, thickness of electrode 0.1mm~0.3mm.
Cathode copper electrode：It is obtained using physical gas-phase deposite method, thickness of electrode 0.1mm~0.3mm.
The energy-efficient LED semiconductor chips work implementation process of duplex：Electronics is injected by cathode, and hole is injected by anode.It is right
It is tied in P-GaN/GaN/N-GaN LED Ps N, the electronics in N-GaN films will be thin in GaN with the hole in P-GaN films
Compound, generation photon and heat occur in film layer.Heat diffuses to N-GaN substrates by GaN film, and then is transferred to N-GaN/
HfO2The N-GaN films of/P-ZnO LED Ps N knots.For N-GaN/HfO2/ P-ZnO light emitting diodes, due to P-ZnO with
The bandgap of N-GaN, by luminescent layer HfO2The photon energy of film release is done work more than electric field, it is therefore necessary to be absorbed from the external world
Heat could complete the compound of electronics and hole.So the heat of N-GaN/GaN/P-GaN releases can be by HfO2Film is inhaled
It receives, and then supplements photon energy.Therefore luminous efficiency can be improved using duplex LED semiconductor chips, reduce refrigeration burden, reached
To energy-efficient purpose.
Example the above is only the implementation of the present invention is not intended to restrict the invention.The present invention can have various conjunctions
Suitable change and variation.Any modification, equivalent replacement, improvement and so on all within the spirits and principles of the present invention, should all
It is included within protection scope of the present invention.
Claims (2)
1. a kind of duplex energy-saving LED semiconductor chip, it is characterised in that：The LED semiconductor chips are made of ten parts, point
It is not DC power supply, conducting wire, positive copper electrode, P-GaN films, GaN film, N-GaN films, N-GaN substrates, HfO2Film,
P-ZnO films, cathode copper electrode, DC power supply are connect with positive copper electrode, cathode copper electrode respectively by conducting wire, and electric current passes through
Positive copper electrode imports LED semiconductor chips, passes back into power supply by cathode copper electrode, electronics directed movement is driven, in rectangle N-
Six PN junction chips are integrated in GaN substrate, three, the left side PN junction constituted for N-GaN/GaN/P-GaN, three, the right is P-
ZnO/HfO2The PN junction that/N-GaN is constituted, N-GaN substrates are prepared using chemical vapor deposition method, and left side N-GaN films use
Chemical vapor deposition method is prepared and is deposited on N-GaN substrates, and GaN film is prepared and deposited using chemical vapor deposition method
On the N-GaN films of the left side, left side P-GaN films are prepared using chemical vapor deposition method and are deposited in GaN film, anode
Copper electrode is obtained using physical gas-phase deposite method and is deposited on P-GaN films, and the right P-ZnO films use chemical vapor deposition
Product technique is prepared and is deposited on N-GaN substrates, the right HfO2Film is prepared using chemical vapor deposition method and is deposited on P-
On ZnO film, the right N-GaN films are prepared using chemical vapor deposition method and are deposited on HfO2On film, cathode copper electrode
It is obtained and is deposited on N-GaN films using physical gas-phase deposite method, the luminous PN junction on the left side belongs to electroluminescent PN junction, electricity
A large amount of thermal energy will be also discharged when son is with hole-recombination other than discharging photon, thermal energy passes to the right N- by substrate N-GaN
GaN/HfO2The PN junction that/P-ZnO is constituted, due to N-GaN/HfO2/ P-ZnO has stepped electronics Well structure so that electronics
When with hole-recombination, photon is made to obtain the energy to do work more than electric field, which derives from the thermal energy obtained from the external world,
Therefore left side LED heat burden can either be reduced and can provide part driving luminous thermal energy for the right LED.
2. a kind of duplex energy-saving LED semiconductor chip as described in claim 1, it is characterised in that：The DC power supply is straight
Voltage stabilizing driving power is flowed, voltage is 5~10V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710022209.1A CN106784229B (en) | 2017-01-13 | 2017-01-13 | A kind of duplex energy-saving LED semiconductor chip and the method for reducing power consumption |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710022209.1A CN106784229B (en) | 2017-01-13 | 2017-01-13 | A kind of duplex energy-saving LED semiconductor chip and the method for reducing power consumption |
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| Publication Number | Publication Date |
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| CN106784229A CN106784229A (en) | 2017-05-31 |
| CN106784229B true CN106784229B (en) | 2018-10-19 |
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| CN201710022209.1A Expired - Fee Related CN106784229B (en) | 2017-01-13 | 2017-01-13 | A kind of duplex energy-saving LED semiconductor chip and the method for reducing power consumption |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109233809B (en) * | 2018-10-17 | 2021-06-22 | 广东远合工程科技有限公司 | Preparation of composite bifunctional perovskite material combining thermoluminescence and photoluminescence performance |
| CN116171754A (en) * | 2023-03-03 | 2023-05-30 | 中国农业科学院都市农业研究所 | Application method of thermoluminescent material |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103633204A (en) * | 2013-12-04 | 2014-03-12 | 武汉大学 | Ta2O5/ZnO/HfO2 asymmetric double-heterojunction light emitting diode and manufacturing method thereof |
| CN103956416A (en) * | 2014-05-15 | 2014-07-30 | 深圳大学 | ZnO-based white light LED and preparing method thereof |
| CN105977357A (en) * | 2016-05-17 | 2016-09-28 | 西安交通大学 | Insulation dielectric film solid-state light-emitting device light emission enhancing method |
-
2017
- 2017-01-13 CN CN201710022209.1A patent/CN106784229B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103633204A (en) * | 2013-12-04 | 2014-03-12 | 武汉大学 | Ta2O5/ZnO/HfO2 asymmetric double-heterojunction light emitting diode and manufacturing method thereof |
| CN103956416A (en) * | 2014-05-15 | 2014-07-30 | 深圳大学 | ZnO-based white light LED and preparing method thereof |
| CN105977357A (en) * | 2016-05-17 | 2016-09-28 | 西安交通大学 | Insulation dielectric film solid-state light-emitting device light emission enhancing method |
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