CN106784058A - A kind of black silicon solar cell structure and its manufacture craft - Google Patents
A kind of black silicon solar cell structure and its manufacture craft Download PDFInfo
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- CN106784058A CN106784058A CN201611032107.XA CN201611032107A CN106784058A CN 106784058 A CN106784058 A CN 106784058A CN 201611032107 A CN201611032107 A CN 201611032107A CN 106784058 A CN106784058 A CN 106784058A
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- 229910021418 black silicon Inorganic materials 0.000 title claims abstract description 83
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 87
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 87
- 239000010703 silicon Substances 0.000 claims abstract description 87
- 238000009792 diffusion process Methods 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 238000002161 passivation Methods 0.000 claims abstract description 51
- 239000002210 silicon-based material Substances 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 230000004888 barrier function Effects 0.000 claims abstract description 23
- 238000010521 absorption reaction Methods 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 16
- 210000002268 wool Anatomy 0.000 claims abstract description 13
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 47
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims description 33
- 239000000377 silicon dioxide Substances 0.000 claims description 24
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 17
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 238000005516 engineering process Methods 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 13
- 239000000839 emulsion Substances 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 150000001638 boron Chemical class 0.000 claims description 12
- -1 ethoxylated bisphenol A dimethylacrylates Chemical class 0.000 claims description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 11
- 230000004224 protection Effects 0.000 claims description 11
- 229910000077 silane Inorganic materials 0.000 claims description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- DTOSIQBPPRVQHS-PDBXOOCHSA-N alpha-linolenic acid Chemical compound CC\C=C/C\C=C/C\C=C/CCCCCCCC(O)=O DTOSIQBPPRVQHS-PDBXOOCHSA-N 0.000 claims description 10
- 239000002002 slurry Substances 0.000 claims description 10
- 235000008216 herbs Nutrition 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000002310 reflectometry Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910003978 SiClx Inorganic materials 0.000 claims description 6
- 238000003854 Surface Print Methods 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000002159 nanocrystal Substances 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 claims description 5
- 239000004342 Benzoyl peroxide Substances 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 5
- 235000020661 alpha-linolenic acid Nutrition 0.000 claims description 5
- 235000019400 benzoyl peroxide Nutrition 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 239000006184 cosolvent Substances 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229960004488 linolenic acid Drugs 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 229920000570 polyether Polymers 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 claims description 4
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 4
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 claims description 4
- 239000002318 adhesion promoter Substances 0.000 claims description 4
- HDERJYVLTPVNRI-UHFFFAOYSA-N ethene;ethenyl acetate Chemical compound C=C.CC(=O)OC=C HDERJYVLTPVNRI-UHFFFAOYSA-N 0.000 claims description 4
- 230000004907 flux Effects 0.000 claims description 4
- 239000003921 oil Substances 0.000 claims description 4
- 238000007639 printing Methods 0.000 claims description 4
- 150000003376 silicon Chemical class 0.000 claims description 4
- 150000003673 urethanes Chemical class 0.000 claims description 4
- 241000790917 Dioxys <bee> Species 0.000 claims description 3
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 2
- 210000000481 breast Anatomy 0.000 claims 1
- 229920002545 silicone oil Polymers 0.000 claims 1
- 239000004408 titanium dioxide Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 4
- 150000001642 boronic acid derivatives Chemical group 0.000 abstract 1
- 230000009102 absorption Effects 0.000 description 15
- 238000001020 plasma etching Methods 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 238000011160 research Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 230000002528 anti-freeze Effects 0.000 description 1
- 230000001857 anti-mycotic effect Effects 0.000 description 1
- 230000002421 anti-septic effect Effects 0.000 description 1
- 239000002543 antimycotic Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical class OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- WBJINCZRORDGAQ-UHFFFAOYSA-N formic acid ethyl ester Natural products CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- DCKVNWZUADLDEH-UHFFFAOYSA-N sec-butyl acetate Chemical compound CCC(C)OC(C)=O DCKVNWZUADLDEH-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of black silicon solar cell structure, including N-type silicon substrate, the surface field of N-type silicon substrate is equipped with Type B diffusion layer and insulating barrier successively from bottom to top, wherein, the material of Type B diffusion layer is borate, the material of insulating barrier is SiNx layer film, and the upper surface of insulating barrier is provided with p-type metal electrode；The back surface field of N-type silicon substrate is disposed with broad absorption black silicon material layer and passivation layer from top to bottom, and passivation layer lower surface is provided with N-shaped metal electrode；The present invention have also been devised a kind of manufacture craft of black silicon solar cell structure, the present invention is simple to operate, reaction is complicated simply, yield is high, can significantly put forward effect more than 0.5%, silicon wafer wool making back reflection rate is greatly reduced, lifting conversion efficiency 0.4% 0.8%, silicon wafer wool making back reflection rate is down to 5 or so from existing 20.
Description
Technical field
The present invention relates to the production technical field of black silicon solar cell, particularly a kind of black silicon solar cell structure and
Its manufacture craft.
Background technology
Crystalline silicon due to being easily purified, easily doping, high temperature resistant the advantages of there is application widely in semicon industry,
But many defects are equally there is also, such as reflection of the surface of crystalline silicon to visible ray to infrared light is very high, and because energy gap
Greatly, crystalline silicon is unable to light wave of the absorbing wavelength more than 1100nm, and when the wavelength of incident light is more than 1100nm, silicon detector is to light
Absorptivity and responsiveness will substantially reduce；The other materials such as germanium, GaAs must be used when these wave bands are detected；Due to this
A little the expensive of material, thermodynamic property and product weight are poor and can not be compatible with existing ripe silicon technology etc. lack
Put and limit its application in terms of silicon-based devices；Therefore, reflection, extension silicon substrate and the silicon compatibility light of surface of crystalline silicon are reduced
The detecting band of electric explorer is still research most popular at present.
In order to reduce the reflection of surface of crystalline silicon, people employ many experimental techniques and technology, such as photoetching technique, reaction
Ion beam etching, electrochemical corrosion etc.；These technologies can to a certain extent change surface of crystalline silicon and near surface pattern, reach
To the purpose for reducing silicon face reflection；In visible light wave range, reducing reflection can increase the efficiency for absorbing raising devices；But
When wavelength is more than 1100nm, if introducing absorption level in silicon forbidden band；Reflection reduction only results in transmission to be increased, because silicon
Energy gap ultimately limit its absorption to long wavelength light；Therefore, the sensitive band of silicon substrate and silicon compatible device is extended, just
The photonic absorption increased in forbidden band while must being reflected silicon face is reduced.
Late 1990s, Harvard University professor EricMazur is waited in research femtosecond laser and matter interaction
During obtain a kind of new material-black silicon；EricMazur etc. is surprised to find this when the photoelectric property of black silicon is studied
The silicon materials that surface micro-structuring is crossed have peculiar photoelectric property, and its light almost all near ultraviolet near infrared band is inhaled
Receive, with good visible and near-infrared luminous characteristic and good field emission characteristicses etc.；This is found in semiconductor circle
Terrifying waves are started, major magazines fall over each other report to this.
NewScientist magazines in 2001 etc. all deliver column, comment the discovery and its potential application of black silicon
Property think it the fields such as remote sensing, optical communication and microelectronics all have important potential using value；At present, foreign countries is a lot
Scientist includes that domestic scholar has carried out the research work of many black silicon, and achieves preliminary achievement in research.
Therefore, black silicon technology be applied in solar cell will be following high-efficiency battery development trend；This project development
Purpose be that black silicon solar cell technology is studied, to expect to obtain the black silicon solar electricity of inexpensive high conversion efficiency
Pond simultaneously reaches mass production；By the research to black silicon solar cell key technology, breakthrough will be in the following areas obtained,
Reach domestically leading or advanced level；Exploration possesses the key technology of the black silicon solar cell of independent intellectual property right, including product
Structure and its manufacturing process flow；Obtain the Basic Research Results in forward position.
The content of the invention
The technical problems to be solved by the invention are the shortcomings for overcoming prior art, there is provided a kind of black silicon solar cell
Structure and its manufacture craft.
In order to solve the above technical problems, the present invention provides a kind of black silicon solar cell structure, including N-type silicon substrate, N
The surface field of type silicon substrate is equipped with Type B diffusion layer and insulating barrier successively from bottom to top, wherein, the material of Type B diffusion layer is boron
Hydrochlorate, the material of insulating barrier is SiNx layer film, and the upper surface of insulating barrier is provided with p-type metal electrode；
The back surface field of N-type silicon substrate is disposed with broad absorption black silicon material layer and passivation layer, passivation from top to bottom
Layer lower surface is provided with N-shaped metal electrode.
The technical scheme that further limits of the invention is：
Further, foregoing black silicon solar cell structure, broad absorption black silicon material layer uses black silicon material, and this is black
Silicon materials have at intervals of 20nm to 20 μm, and breadth wise dimension is 20nm to 20 μm, depth for 20nm to 20 μm silicon cone, silicon grain or
Silicon hole, this material has the absorptivity of ＞ 85% to the sunshine in 0.25 μm to 2.5 μ m wavelength ranges.
Foregoing black silicon solar cell structure, leaves distance, N-shaped between p-type metal electrode and the edge of N-type silicon substrate
Distance is left between metal electrode and the edge of N-type silicon substrate.
Foregoing black silicon solar cell structure, SiNx layer film is the stack membrane that silicon nitride and silica are constituted.
Foregoing black silicon solar cell structure, silica tunic is located at the lower section of silicon nitride tunic, silicon dioxide layer
The thickness of film is 41-43nm, and the thickness of silicon nitride tunic is 80-83nm.
The present invention have also been devised a kind of manufacture craft of black silicon solar cell structure, from N-type silicon substrate as substrate,
Comprise the following specific steps that：
1. boron salt acid solution is coated in the surface field of N-type silicon substrate, and N-type silicon substrate is put into tube furnace is expanded
Dissipate, be passed through N2Gas is used as protection, N2The flow of gas is 11slm, and diffusion temperature is 910-930 DEG C, and diffusion time is 11-
13min, forms Type B diffusion layer；
Boron salt acid solution is prepared as：By B2O5It is dissolved into the solution of formation 13-16wt% in watery hydrochloric acid；
2. making herbs into wool is carried out to black silicon material using the black silicon technologies of RIE, matte size is in 200-700nm, depth 180-
220nm；
PCLO3 method of diffusion is used in the back surface field of N-type silicon substrate, the flow 900sccm of diffusion, diffusion time is controlled
It is 4-6min, 880-900 DEG C of diffusion temperature, the overall sheet resistance 100-120 of control controls junction depth 2.7un, and 6.0E+20 is done on surface,
Even property is less than 7%, forms p-doped gradient layer；Above-mentioned black silicon material is utilized on the back surface field p-doped gradient layer of N-type silicon substrate
Make broad absorption black silicon material layer；
3. it is the silica tunic of 41-43nm to use nitric acid oxidation to make thickness in the upper surface of Type B diffusion layer, two
It is the silicon nitride tunic of 80-83nm that PECV D deposit thickness is used on silica tunic, and silica tunic is used as passivation layer, nitrogen
SiClx layer is less than 8% as antireflection layer, control reflectivity, and passivation layer is with antireflection layer collectively as insulating barrier；
4. broad absorption black silicon material layer lower surface make passivation layer, using silane carry out two-layer passivation plated film and
Into, increase silane flow rate 150 during ground floor passivation plated film, silane flow rate 50, control passivation are reduced when plated film is passivated in second step
The thickness of layer is 84-87um；
5. printing Ag/Al is starched on the insulating layer, makes p-type metal electrode, in the lower surface printing Al slurries of passivation layer, is made
N-shaped metal electrode.
The manufacture craft of foregoing black silicon solar cell structure, it is from N-type silicon substrate as substrate including following specific
Step：
1. boron salt acid solution is coated in the surface field of N-type silicon substrate, and N-type silicon substrate is put into tube furnace is expanded
Dissipate, be passed through N2Gas is used as protection, N2The flow of gas is 11slm, and diffusion temperature is 920 DEG C, and diffusion time is 12min, shape
Into Type B diffusion layer；
Boron salt acid solution is prepared as：By B2O5It is dissolved into the solution of formation 15wt% in watery hydrochloric acid；
2. making herbs into wool is carried out to black silicon material using the black silicon technologies of RIE, matte size is in 200-700nm, depth 180-
220nm；
PCLO3 method of diffusion is used in the back surface field of N-type silicon substrate, the flow 900sccm of diffusion, diffusion time is controlled
It is 5min, 890 DEG C of diffusion temperature, the overall sheet resistance 100-120 of control controls junction depth 2.7un, and 6.0E+20 is done on surface, and uniformity is small
In 7%, p-doped gradient layer is formed；Make wide using above-mentioned black silicon material on the back surface field p-doped gradient layer of N-type silicon substrate
Spectrum absorbs black silicon material layer；
3. it is the silica tunic of 42nm to use nitric acid oxidation to make thickness in the upper surface of Type B diffusion layer, in dioxy
It is the silicon nitride tunic of 81nm that PECVD deposit thickness is used on SiClx tunic, and silica tunic is used as passivation layer, silicon nitride layer
Used as antireflection layer, control reflectivity is less than 8%, and passivation layer is with antireflection layer collectively as insulating barrier；
4. the lower surface in broad absorption black silicon material layer makes passivation layer, and the thickness of passivation layer is 84-87um；
5. printing Ag/Al is starched on the insulating layer, makes p-type metal electrode, in the lower surface printing Al slurries of passivation layer, is made
N-shaped metal electrode (7).
The manufacture craft of foregoing black silicon solar cell structure, coats on the side surface of N-type silicon substrate (4) and prevents anti-covering
Ice adheres to emulsion, and the mass percent component of anti-anti-ice cover attachment emulsion is：4- isocyanatomethyls：7-9%, amino
Ethyl formate：11-13%, alpha-linolenic acid：3.3-3.5%, ethoxylated bisphenol A dimethylacrylates：1.3-1.5%, three hydroxyls
Trimethacrylate：4.5-4.7%, benzoyl peroxide：3.2-3.4%, butyl acrylate：2.3-2.5%,
2- hydroxyl -1,2- diphenylethans：2.7-2.9%, antimony doped stannum oxide nano-crystal：2.8-3%, nano titanium oxide：4.3-
4.5%, nanometer silicon carbide：2.5-2.7%, ethene-vinyl acetate：2.5-2.7%, polyoxyethylene aliphatic alcohol ether：3.7-
3.9%, dimethyl silicone polymer：1.4-1.6%, polyether modified silicon oil：1.1-1.3%, cosolvent：5.4-5.6%, adhesive force
Accelerator：9.3-9.5%, organic fluorine waterproof agent：Surplus.
The manufacture craft of foregoing black silicon solar cell structure, anti-anti-ice cover adheres to the mass percent component of emulsion
For：4- isocyanatomethyls：8%, urethanes：12%, alpha-linolenic acid：3.3%, ethoxylated bisphenol A diformazans
Base acrylate：1.3%, trimethylol-propane trimethacrylate：4.6%, benzoyl peroxide：3.3%, acrylic acid fourth
Ester：2.4%, 2- hydroxyl -1,2- diphenylethans：2.8%, antimony doped stannum oxide nano-crystal：2.9%, nano titanium oxide：
4.4%, nanometer silicon carbide：2.6%, ethene-vinyl acetate：2.7%, polyoxyethylene aliphatic alcohol ether：3.8%, poly dimethyl silicon
Oxygen alkane：1.5%, polyether modified silicon oil：1.2%, cosolvent：5.5%, adhesion promoter：9.4%, organic fluorine waterproof agent：It is remaining
Amount.
The beneficial effects of the invention are as follows：
N-type silicon substrate is put into tube furnace in the present invention is diffused, be passed through N2Gas is used as protection, N2The stream of gas
It is 11slm to measure, and diffusion temperature is 920 DEG C, and diffusion time is 12min, and the uniformity is less than 10% in control pipe, uniform in control sheet
Degree is less than 7%, and as shown in table 1, the average sheet resistance for obtaining is 70.2 Ω/sq, deviation≤3 Ω/sq；With the diffusion of solid-state boron and liquid
Boron diffusion has that diffusion temperature is low, the time is short, process is simple and advantages of environment protection, therefore, this diffusion technique is preparing N
The emitter stage aspect of type solar cell has broad application prospects.Additionally, this diffusion technique is also applied to prepare P
The back surface field of type battery.
Table 1
| First warm area | Second warm area | Three-temperature-zone | Four-temperature region | 5th warm area | |
| 67.5 | 71.2 | 69 | 70.5 | 70.1 | |
| 70.2 | 73.5 | 68.7 | 70.6 | 68.9 | |
| 69.3 | 69.5 | 68.9 | 70.9 | 69 | |
| 70.1 | 70 | 70.3 | 69 | 69.3 | |
| 68.2 | 70.1 | 71 | 68.5 | 70.2 | |
| Average value | 69.06 | 70.86 | 69.58 | 69.9 | 69.5 |
The beneficial effects of the invention are as follows：Compared with prior art, the invention has the advantages that：920 DEG C under N2 protections,
The average sheet resistance that 12min diffusions are obtained is 70.2 Ω/sq, deviation≤3 Ω/sq；Have with the diffusion of solid-state boron and the diffusion of liquid boron
Diffusion temperature is low, the time is short, process is simple and advantages of environment protection, therefore, this diffusion technique is preparing N-type solar-electricity
The emitter stage aspect in pond has broad application prospects.Additionally, this diffusion technique is also applied to prepare the back of the body of p-type battery
.
The black silicon technologies of RIE (reactive ion etching method) are used in the present invention, it is simple to operate, reaction is complicated simply, yield is high,
Effect more than 0.5% can be significantly put forward, and treatment is convenient；The present invention makes full use of the sour making herbs into wool matte light trapping structure in itself to carry out instead
Should, matte becomes big, and corrosion depth is deepened, and between 200-700nm, depth is greatly reduced silicon chip to matte size in 200nm or so
Making herbs into wool back reflection rate, lifts conversion efficiency 0.4%-0.8%, and silicon wafer wool making back reflection rate is down to 5 or so, Buddha's warrior attendant from existing 20
Wire cutting silicon wafer wool making back reflection rate is down to 7 or so, solves the problems, such as that existing silicon wafer cut by diamond wire reflectivity is high, substitution master
The mortar cutting of stream, silicon chip cost declines 10%-20%；
Because making herbs into wool matte becomes big in the present invention, corrosion depth increases, and phosphorous source diffusion reduction 100sccm, the propulsion time increases
Plus 5min, in 100-120, junction depth is controlled in 2.7um, and surface concentration exists in 6.0E+20, uniformity controlling for overall sheet resistance control
Within 7%；
Meanwhile, RIE processes can cause the surface recombination to increase, and when making passivation layer, increase first step plated film silane flow rate
150, reduction second step plated film silane flow rate 50 increases passivation effect, and film thickness monitoring is controlled in 2.06- in 85-86um, refractive index
2.12。
The formula that anti-anti-ice cover attachment emulsion of the invention passes through its science, attachment is sprayed in the side surface of N-type silicon substrate
After emulsion, in the presence of outdoor ultraviolet light, wherein polymer secondary copolymerization and cross-linking reaction to attachment emulsion can occur, generation
The diaphragm of network structure, is greatly improved adhesion strength, the strong peel strength of attachment emulsion and the side surface of N-type silicon substrate
And tearing strength, so as to solve the technical problem that anti-anti-ice cover attachment emulsion and the side surface of N-type silicon substrate are difficult to combine, make
The side surface of N-type silicon substrate has excellent water repellency, waterproof antifreeze and anti-anti-ice cover performance, it is used for rainy day cold environment
When still keep premium properties；
According to experiment, the solar cell of spin coating borate diffusion layer of the invention is placed in heavy rain, water repellency is
3-5 times of conventional solar cells；The solar cell of spin coating borate diffusion layer of the invention is placed on subzero 1-15 DEG C
Environment in, solar cell outer surface is not-easy-to-freeze after rainwater；
In addition, in present invention attachment emulsion, antimony doped stannum oxide nano-crystal, nano titanium oxide, nanometer silicon carbide energy etc.
The addition of composition makes the side surface of N-type silicon substrate have good antistatic behaviour and absorbs thermal insulation, and with antimycotic antiseptic and
Soil resistance, moreover it is possible to improve its wear resistance, obtains unexpected technique effect.
Brief description of the drawings
Fig. 1 is the structural representation of the black silicon solar cell structure designed by the present invention；
Wherein, 1-P types metal electrode, 2- insulating barriers, 3-B type diffusion layers, 4-N type silicon substrates, the black silicon material of 5- broad absorptions
The bed of material, 6- passivation layers, 7-n type metal electrodes.
Specific embodiment
Embodiment 1
As shown in figure 1, a kind of black silicon solar cell structure that the present embodiment is provided, including N-type silicon substrate 4, N-type silicon lining
The surface field at bottom 4 is equipped with Type B diffusion layer 3 and insulating barrier 2 successively from bottom to top, wherein, the material of Type B diffusion layer 3 is boric acid
Salt, the material of insulating barrier 2 is SiNx layer film, and the upper surface of insulating barrier 2 is provided with p-type metal electrode 1；
The back surface field of N-type silicon substrate 4 is disposed with broad absorption black silicon material layer 5 and passivation layer 6 from top to bottom, blunt
Change the lower surface of layer 6 and be provided with n types metal electrode 7；
Broad absorption black silicon material layer 5 uses black silicon material, and the black silicon material has at intervals of 20nm to 20 μm, horizontal chi
It is 20nm to 20 μm to spend, and depth is 20nm to 20 μm of silicon cone, silicon grain or silicon hole, and this material is to 0.25 μm to 2.5 mum wavelengths
In the range of sunshine there is the absorptivity of ＞ 85%；
Distance, N-shaped metal electrode 7 and N-type silicon substrate 4 are left between the edge of p-type metal electrode 1 and N-type silicon substrate 4
Distance is left between edge；SiNx layer film is the stack membrane that silicon nitride and silica are constituted；Silica tunic is located at nitridation
The lower section of silicon membrane layer, the thickness of silica tunic is 41-43nm, and the thickness of silicon nitride tunic is 80-83nm.
Embodiment 2
A kind of manufacture craft of black silicon solar cell structure is present embodiments provided, from N-type silicon substrate 4 as base
Bottom, comprises the following specific steps that：
1. boron salt acid solution is coated in the surface field of N-type silicon substrate 4, and N-type silicon substrate 4 is put into tube furnace is carried out
Diffusion, is passed through N2Gas is used as protection, N2The flow of gas is 11slm, and diffusion temperature is 910-930 DEG C, and diffusion time is 11-
13min, forms Type B diffusion layer 3；
Boron salt acid solution is prepared as：By B2O5It is dissolved into the solution of formation 13-16wt% in watery hydrochloric acid；
2. making herbs into wool is carried out to black silicon material using the black silicon technologies of RIE, matte size is in 200-700nm, depth 180-
220nm；
PCLO3 method of diffusion is used in the back surface field of N-type silicon substrate 4, the flow 900sccm of diffusion is controlled, during diffusion
Between be 4-6min, 880-900 DEG C of diffusion temperature, the overall sheet resistance 100-120 of control controls junction depth 2.7un, and 6.0E+20 is done on surface,
Uniformity is less than 7%, forms p-doped gradient layer；Above-mentioned black silicon material is utilized on the back surface field p-doped gradient layer of N-type silicon substrate 4
Material makes broad absorption black silicon material layer 5；
3. it is the silica tunic of 41-43nm to use nitric acid oxidation to make thickness in the upper surface of Type B diffusion layer 3,
It is the silicon nitride tunic of 80-83nm that PECVD deposit thickness is used on silica tunic, silica tunic as passivation layer,
Silicon nitride layer is less than 8% as antireflection layer, control reflectivity, and passivation layer is with antireflection layer collectively as insulating barrier 2；
4. broad absorption black silicon material layer 5 lower surface make passivation layer 6, using silane carry out two-layer passivation plated film and
Into what increase silane flow rate 150 flux unit here is during ground floor passivation plated film, and passivation speed is how many, second step
What reduction silane flow rate 50 flux unit here is during middle passivation plated film, and passivation speed is how many, controls the thickness of passivation layer 6
It is 84-87um to spend；
5. Ag/Al slurries are printed on insulating barrier 2, p-type metal electrode 1 is made, in the lower surface printing Al slurries of passivation layer 6,
Make N-shaped metal electrode 7.
Embodiment 3
A kind of manufacture craft of black silicon solar cell structure is present embodiments provided, from N-type silicon substrate 4 as base
Bottom, comprises the following specific steps that：
1. boron salt acid solution is coated in the surface field of N-type silicon substrate 4, and N-type silicon substrate 4 is put into tube furnace is carried out
Diffusion, is passed through N2Gas is used as protection, N2The flow of gas is 11slm, and diffusion temperature is 920 DEG C, and diffusion time is 12min,
Form Type B diffusion layer 3；
Boron salt acid solution is prepared as：By B2O5It is dissolved into the solution of formation 15wt% in watery hydrochloric acid；
2. making herbs into wool is carried out to black silicon material using the black silicon technologies of RIE, matte size is in 200-700nm, depth 180-
220nm；
PCLO3 method of diffusion is used in the back surface field of N-type silicon substrate 4, the flow 900sccm of diffusion is controlled, during diffusion
Between be 5min, 890 DEG C of diffusion temperature, the overall sheet resistance 100-120 of control controls junction depth 2.7un, and 6.0E+20, uniformity are done in surface
Less than 7%, p-doped gradient layer is formed；Made using above-mentioned black silicon material on the back surface field p-doped gradient layer of N-type silicon substrate 4
Broad absorption black silicon material layer 5；
3. it is the silica tunic of 42nm to use nitric acid oxidation to make thickness in the upper surface of Type B diffusion layer 3, in dioxy
It is the silicon nitride tunic of 81nm that PECVD deposit thickness is used on SiClx tunic, and silica tunic is used as passivation layer, silicon nitride layer
Used as antireflection layer, control reflectivity is less than 8%, and passivation layer is with antireflection layer collectively as insulating barrier 2；
4. the lower surface in broad absorption black silicon material layer 5 makes passivation layer 6, and the thickness of passivation layer 6 is 84-87um；
5. Ag/Al slurries are printed on insulating barrier 2, p-type metal electrode 1 is made, in the lower surface printing Al slurries of passivation layer 6,
Make N-shaped metal electrode 7；
Anti- anti-ice cover attachment emulsion is coated on the side surface of N-type silicon substrate 4, anti-anti-ice cover adheres to the quality percentage of emulsion
It is than component：4- isocyanatomethyls：8%, urethanes：12%, alpha-linolenic acid：3.3%, ethoxylated bisphenol
A dimethylacrylates：1.3%, trimethylol-propane trimethacrylate：4.6%, benzoyl peroxide：3.3%, third
Olefin(e) acid butyl ester：2.4%, 2- hydroxyl -1,2- diphenylethans：2.8%, antimony doped stannum oxide nano-crystal：2.9%, nano-silica
Change titanium：4.4%, nanometer silicon carbide：2.6%, ethene-vinyl acetate：2.7%, polyoxyethylene aliphatic alcohol ether：3.8%, poly- diformazan
Radical siloxane：1.5%, polyether modified silicon oil：1.2%, cosolvent：5.5%, adhesion promoter：9.4%, organic fluorine waterproof
Agent：Surplus.
Above example is only explanation technological thought of the invention, it is impossible to limit protection scope of the present invention with this, every
According to technological thought proposed by the present invention, any change done on the basis of technical scheme each falls within the scope of the present invention
Within.
Claims (9)
1. a kind of black silicon solar cell structure, it is characterised in that including N-type silicon substrate（4）, the N-type silicon substrate（4）Table
Face is equipped with Type B diffusion layer successively from bottom to top（3）And insulating barrier（2）, wherein, the Type B diffusion layer（3）Material be boron
Hydrochlorate, the insulating barrier（2）Material be SiNx layer film, the insulating barrier（2）Upper surface be provided with p-type metal electrode（1）；
The N-type silicon substrate（4）Back surface field be disposed with from top to bottom broad absorption black silicon material layer（5）And passivation layer
（6）, the passivation layer（6）Lower surface is provided with N-shaped metal electrode（7）.
2. black silicon solar cell structure according to claim 1, it is characterised in that the broad absorption black silicon material layer
（5）Using black silicon material, the black silicon material has at intervals of 20nm to 20 μm, and breadth wise dimension is 20nm to 20 μm, and depth is
20nm to 20 μm of silicon cone, silicon grain or silicon hole, this material has ＞ to the sunshine in 0.25 μm to 2.5 μ m wavelength ranges
85% absorptivity.
3. black silicon solar cell structure according to claim 2, it is characterised in that the p-type metal electrode（1）With N
Type silicon substrate（4）Edge between leave distance, the N-shaped metal electrode（7）With N-type silicon substrate（4）Edge between leave
Distance.
4. black silicon solar cell structure according to claim 3, it is characterised in that the SiNx layer film be silicon nitride and
The stack membrane that silica is constituted.
5. black silicon solar cell structure according to claim 4, it is characterised in that the silica tunic is located at nitrogen
The lower section of SiClx tunic, the thickness of the silica tunic is 41-43nm, and the thickness of the silicon nitride tunic is 80-83nm.
6. the manufacture craft of black silicon solar cell structure according to claim 5, it is characterised in that from N-type silicon lining
Bottom（4）As substrate, comprise the following specific steps that：
Boron salt acid solution is coated in N-type silicon substrate（4）Surface field, and by N-type silicon substrate（4）Being put into tube furnace is carried out
Diffusion, is passed through N2Gas is used as protection, N2The flow of gas is 11slm, and diffusion temperature is 910-930 DEG C, and diffusion time is 11-
13min, forms Type B diffusion layer（3）；
The boron salt acid solution is prepared as：By B2O5It is dissolved into the solution of formation 13-16wt% in watery hydrochloric acid；
Making herbs into wool is carried out to black silicon material using the black silicon technologies of RIE, matte size is in 200-700nm, depth 180-220nm；
In N-type silicon substrate（4）Back surface field use PCLO3 method of diffusion, control diffusion flow 900sccm, diffusion time
It is 4-6min, 880-900 DEG C of diffusion temperature, the overall sheet resistance 100-120 of control controls junction depth 2.7un, and 6.0E+20 is done on surface,
Even property is less than 7%, forms p-doped gradient layer；In N-type silicon substrate（4）Back surface field p-doped gradient layer on utilize above-mentioned black silicon material
Material makes broad absorption black silicon material layer（5）；
In Type B diffusion layer（3）Upper surface use nitric acid oxidation make thickness be the silica tunic of 41-43nm, in dioxy
It is the silicon nitride tunic of 80-83nm that PECVD deposit thickness is used on SiClx tunic, the silica tunic as passivation layer,
The silicon nitride layer is less than 8% as antireflection layer, control reflectivity, and passivation layer is with antireflection layer collectively as insulating barrier（2）；
In broad absorption black silicon material layer（5）Lower surface make passivation layer（6）, using silane carry out two-layer passivation plated film and
Into increase silane flow rate 150 during ground floor passivation plated film（Here what flux unit is, passivation speed is how many）, second
Reduce silane flow rate 50 when plated film is passivated in step（Here what flux unit is, passivation speed is how many）, control passivation layer
（6）Thickness be 84-87um；
In insulating barrier（2）Upper printing Ag/Al slurries, make p-type metal electrode（1）, in passivation layer（6）Lower surface printing Al slurry,
Make N-shaped metal electrode（7）.
7. the manufacture craft of black silicon solar cell structure according to claim 6, it is characterised in that from N-type silicon lining
Bottom（4）As substrate, comprise the following specific steps that：
Boron salt acid solution is coated in N-type silicon substrate（4）Surface field, and by N-type silicon substrate（4）Being put into tube furnace is carried out
Diffusion, is passed through N2Gas is used as protection, N2The flow of gas is 11slm, and diffusion temperature is 920 DEG C, and diffusion time is 12min, shape
Into Type B diffusion layer（3）；
The boron salt acid solution is prepared as：By B2O5It is dissolved into the solution of formation 15wt% in watery hydrochloric acid；
Making herbs into wool is carried out to black silicon material using the black silicon technologies of RIE, matte size is in 200-700nm, depth 180-220nm；
In N-type silicon substrate（4）Back surface field use PCLO3 method of diffusion, control diffusion flow 900sccm, diffusion time
It is 5min, 890 DEG C of diffusion temperature, the overall sheet resistance 100-120 of control controls junction depth 2.7un, and 6.0E+20 is done on surface, and uniformity is small
In 7%, p-doped gradient layer is formed；In N-type silicon substrate（4）Back surface field p-doped gradient layer on using above-mentioned black silicon material make
Broad absorption black silicon material layer（5）；
In Type B diffusion layer（3）Upper surface use nitric acid oxidation make thickness be the silica tunic of 42nm, in titanium dioxide
It is the silicon nitride tunic of 81nm that PECVD deposit thickness is used on silicon membrane layer, the silica tunic as passivation layer, the nitrogen
SiClx layer is less than 8% as antireflection layer, control reflectivity, and passivation layer is with antireflection layer collectively as insulating barrier（2）；
In broad absorption black silicon material layer（5）Lower surface make passivation layer（6）, passivation layer（6）Thickness be 84-87um；
In insulating barrier（2）Upper printing Ag/Al slurries, make p-type metal electrode（1）, in passivation layer（6）Lower surface printing Al slurry,
Make N-shaped metal electrode（7）.
8. the manufacture craft of the black silicon solar cell structure according to any one claim in claim 6-7, its
It is characterised by, in the N-type silicon substrate（4）Side surface on coat anti-anti-ice cover attachment emulsion, the anti-anti-ice cover attachment breast
The mass percent component of liquid is：4- isocyanatomethyls：7-9%, urethanes：11-13%, alpha-linolenic acid：
3.3-3.5%, ethoxylated bisphenol A dimethylacrylates：1.3-1.5%, trimethylol-propane trimethacrylate：4.5-
4.7%, benzoyl peroxide：3.2-3.4%, butyl acrylate：2.3-2.5%, 2- hydroxyl -1,2- diphenylethans：2.7-
2.9%, antimony doped stannum oxide nano-crystal：2.8-3%, nano titanium oxide：4.3-4.5%, nanometer silicon carbide：2.5-2.7%, second
Alkene-vinyl acetate：2.5-2.7%, polyoxyethylene aliphatic alcohol ether：3.7-3.9%, dimethyl silicone polymer：1.4-1.6%, polyethers changes
Property silicone oil：1.1-1.3%, cosolvent：5.4-5.6%, adhesion promoter：9.3-9.5%, organic fluorine waterproof agent：Surplus.
9. the manufacture craft of black silicon solar cell structure according to claim 8, it is characterised in that the anti-anti-ice cover
Adhere to emulsion mass percent component be：4- isocyanatomethyls：8%, urethanes：12%, alpha-linolenic acid：
3.3%, ethoxylated bisphenol A dimethylacrylates：1.3%, trimethylol-propane trimethacrylate：4.6%, benzoyl peroxide
Formyl：3.3%, butyl acrylate：2.4%, 2- hydroxyl -1,2- diphenylethans：2.8%, antimony doped stannum oxide nano-crystal：2.9%,
Nano titanium oxide：4.4%, nanometer silicon carbide：2.6%, ethene-vinyl acetate：2.7%, polyoxyethylene aliphatic alcohol ether：3.8%, gather
Dimethyl siloxane：1.5%, polyether modified silicon oil：1.2%, cosolvent：5.5%, adhesion promoter：9.4%, organic fluorine waterproof
Agent：Surplus.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107436458A (en) * | 2017-08-04 | 2017-12-05 | 昆山龙腾光电有限公司 | Colored optical filtering substrates and its manufacture method |
| CN110061098A (en) * | 2019-04-28 | 2019-07-26 | 江苏格林保尔光伏有限公司 | A kind of preparation method of the black silion cell of dry method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101789462A (en) * | 2010-02-24 | 2010-07-28 | 中国科学院半导体研究所 | Broad-spectrum absorption black silicon solar cell structure and preparation method thereof |
| CN101882636A (en) * | 2010-05-12 | 2010-11-10 | 中国科学院半导体研究所 | Silicon-based solar cell structure taking broad-spectrum absorption layer as backlight surface and production method thereof |
| CN101916787A (en) * | 2010-05-25 | 2010-12-15 | 中国科学院微电子研究所 | Black silicon solar cell and preparation method thereof |
| CN103247715A (en) * | 2012-02-10 | 2013-08-14 | 信越化学工业株式会社 | Solar cell and method of manufacturing the same |
| CN105609571A (en) * | 2016-02-25 | 2016-05-25 | 上海大族新能源科技有限公司 | IBC solar cell and manufacturing method thereof |
| CN105602412A (en) * | 2016-01-13 | 2016-05-25 | 中国石油大学(华东) | Preparation method of wear-resistant super-hydrophobic nanometer titania coating |
| CN106087155A (en) * | 2016-08-15 | 2016-11-09 | 苏州惠锋化纤机械有限公司 | A kind of short fine production line press-down type crimping machine |
-
2016
- 2016-11-22 CN CN201611032107.XA patent/CN106784058A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101789462A (en) * | 2010-02-24 | 2010-07-28 | 中国科学院半导体研究所 | Broad-spectrum absorption black silicon solar cell structure and preparation method thereof |
| CN101882636A (en) * | 2010-05-12 | 2010-11-10 | 中国科学院半导体研究所 | Silicon-based solar cell structure taking broad-spectrum absorption layer as backlight surface and production method thereof |
| CN101916787A (en) * | 2010-05-25 | 2010-12-15 | 中国科学院微电子研究所 | Black silicon solar cell and preparation method thereof |
| CN103247715A (en) * | 2012-02-10 | 2013-08-14 | 信越化学工业株式会社 | Solar cell and method of manufacturing the same |
| CN105602412A (en) * | 2016-01-13 | 2016-05-25 | 中国石油大学(华东) | Preparation method of wear-resistant super-hydrophobic nanometer titania coating |
| CN105609571A (en) * | 2016-02-25 | 2016-05-25 | 上海大族新能源科技有限公司 | IBC solar cell and manufacturing method thereof |
| CN106087155A (en) * | 2016-08-15 | 2016-11-09 | 苏州惠锋化纤机械有限公司 | A kind of short fine production line press-down type crimping machine |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107436458A (en) * | 2017-08-04 | 2017-12-05 | 昆山龙腾光电有限公司 | Colored optical filtering substrates and its manufacture method |
| CN110061098A (en) * | 2019-04-28 | 2019-07-26 | 江苏格林保尔光伏有限公司 | A kind of preparation method of the black silion cell of dry method |
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Application publication date: 20170531 |