CN106784022A - SBD device and preparation method thereof - Google Patents
SBD device and preparation method thereof Download PDFInfo
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- CN106784022A CN106784022A CN201611184730.7A CN201611184730A CN106784022A CN 106784022 A CN106784022 A CN 106784022A CN 201611184730 A CN201611184730 A CN 201611184730A CN 106784022 A CN106784022 A CN 106784022A
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- gan layers
- metal level
- cushion
- sbd device
- heavy doping
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 39
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 229910002601 GaN Inorganic materials 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 18
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 230000000873 masking effect Effects 0.000 claims description 5
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 229910001020 Au alloy Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910001069 Ti alloy Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000013517 stratification Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a kind of SBD device and preparation method thereof, the SBD device, including：Metal level；It is arranged on the cushion on the metal level；It is arranged on the heavy doping n GaN layers on the cushion；It is arranged on the trace doped n GaN layers in the heavy doping n GaN layers；It is arranged on the Schottky barrier metal level in trace doped n GaN layers.Above-mentioned SBD device designs vertical atomic structre, the thermal runaway phenomenon that can prevent transversal device from occurring in constructing.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of SBD device and preparation method thereof.
Background technology
Based on the power device of silicon, past 20 years, Si power device was improved every 10 years in conventional electric semiconductor market
5-6 times of power density, but theoretical limit has been reached, it is difficult to expect the improvement of ensuing aspect of performance.
Compared to silicon or GaAs (GaAs), gallium nitride (GaN) semiconductor has energy gap (Eg=3.4eV) wide, steady in high temperature
The advantages of determining.In addition, with respect to silicon electric semiconductor, GaN electric semiconductors have low temperature resistant characteristic, this has with electric power half
Conductor and the conversion loss that produces is minimized and the advantages of minimized system cost electric power.GaN semiconductor devices passes through miniaturization,
High voltage, two-forty is changed to realize low loss, is efficient electrical device of new generation, mainly in industry net, power network, letter
Breath is continuously increased with the domain requirement such as mechanics of communication (ICT).
Existing Schottky-barrier diode (Schottky barrier diode are below SBD), to utilize silicon or GaAs
SBD based on, in recent years develop GaN SBD based on.For using the SBD of GaN, mainly with aluminium gallium nitride alloy (AlGaN) and
Using GaN interfaces occur two dimensional electron gas (2-dimensional electron gas, 2DEG) horizontal SBD based on.
With respect to PN junction diode, forward voltage (VF) characteristic of general SBD is low, the fast advantage of transfer characteristic.But leakage
Electric current (IR) is big, wrong to thermal design, it may occur that the shortcomings of thermal runaway.Using the SBD of GaN, with using occurring in AlGaN and
Based on the transversal device of the 2DEG at GaN interfaces, it is difficult effectively to carry out heat emission in this kind of structure, also has shortcoming to thermal runaway.
The content of the invention
Based on this, it is an object of the invention to provide a kind of SBD device of vertical configuration.
Specific technical scheme is as follows：
A kind of SBD device, including：
Metal level (metal layer)；
It is arranged on the cushion (buffer layer) on the metal level；
It is arranged on heavy doping n-GaN layers (heavily doped n-GaN layer) on the cushion；
It is arranged on trace doped n-GaN layers of (lightly doped n-GaN on the heavy doping n-GaN layers
layer)；
It is arranged on the Schottky barrier metal level (barrier metal layer) on the trace doped n-GaN layers.
Wherein in some embodiments, the metal level is conformed with region and non-protruding region, the metal level and weight
Doped n-gan layer is contacted.
Wherein in some embodiments, substrate layer is provided between the non-elevated regions and the cushion.
Wherein in some embodiments, the material of the substrate layer is silicon.
Wherein in some embodiments, the trace doped n-GaN layers doping is 1 × 1018/cm3-1×1019/
cm3, thickness is 0.1 μm -0.5 μm.
Wherein in some embodiments, described heavy doping n-GaN layers of doping is 5 × 1018/cm3-5×1019/cm3,
Thickness is 0.1 μm -0.5 μm.
Wherein in some embodiments, the described heavy doping n-GaN layers strain controlling layer comprising multilayer is sheltered with multilayer
Layer, the number of plies >=0 of the strain controlling layer；The number of plies >=0 of the masking layer.
Wherein in some embodiments, the material of the cushion is gallium nitride, aluminium nitride or aluminum gallium nitride.
Wherein in some embodiments, the material of the Schottky barrier metal level is W, Ti/W, TiN, Ni or Au；It is described
The material of metal level is Ni/Au, Ti/Al, Ti/Al/Ni/Au or Ti/Al/Pt/Au.
It is a further object of the present invention to provide the preparation method of above-mentioned SBD device.
Specific technical scheme is as follows：
A kind of preparation method of SBD device, comprises the following steps：
Substrate layer is provided；
Cushion (buffer layer) is formed on the substrate layer；
N-GaN layers of heavy doping (heavily doped n-GaN layer) is formed on the cushion；
Formed on described heavy doping n-GaN layers trace doped n-GaN layers (lightly doped n-GaN layer)；
Schottky barrier metal level (barrier metal layer) is formed on the trace doped n-GaN layers；
Remove the substrate layer and form metal level, or metal level is formed by the through hole on the substrate layer.
Above-mentioned SBD device designs vertical atomic structre, can prevent 2DEG from (III-Nitride is utilized, using in schottky
Barrier diode's) (2-dimensional electron gas) transversal device construction in occur thermal runaway phenomenon.
In general, SBD (Schottky barrier diode) is lower than general PN diodes clockwise direction voltage characteristic, turns
Throw-over degree is soon its advantage, but it is larger comparatively to leak electricity.
Clockwise direction has larger electric current meeting generating device to generate heat simultaneously, and the leakage current characteristic of heater element can increase, device
Temperature and environment temperature can also rise therewith.If anti-thermal design does not catch up with can not reach thermal equilibrium state, temperature can continue to rise,
Electric leakage simultaneously can also continue to rise the destruction for ultimately resulting in element.
Therefore anti-thermal design is extremely important in SBD, the preferable metal unit of back thermal conductivity difficult to use of transversal device
Part.The distance that electric current is flowed in element during using vertical stratification is shorter and then less heating, possesses the knot for being conducive to anti-thermal design
Structure can prevent heat dissipation phenomenon.
Brief description of the drawings
Fig. 1 is the SBD device of the lateral device structure of prior art；
Fig. 2 is the SBD device of the vertical device structure of an embodiment；
Fig. 3 is the SBD device of the vertical device structure of an embodiment.
Specific embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In accompanying drawing
Give presently preferred embodiments of the present invention.But, the present invention can be realized in many different forms, however it is not limited to this paper institutes
The embodiment of description.On the contrary, the purpose for providing these embodiments is to make the understanding to the disclosure more thorough
Comprehensively.
Unless otherwise defined, all of technologies and scientific terms used here by the article with belong to technical field of the invention
The implication that technical staff is generally understood that is identical.The term for being used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases
The arbitrary and all of combination of the Listed Items of pass.
A kind of SBD device of the present embodiment (as shown in Figure 2), including：
Metal level；
It is arranged on the cushion on the metal level；
It is arranged on heavy doping n-GaN layers on the cushion；
It is arranged on trace doped n-GaN layers on the heavy doping n-GaN layers；
It is arranged on the Schottky barrier metal level on the trace doped n-GaN layers.
It should be understood that the metal level is additionally provided with raised areas and non-protruding region (as shown in Figure 3), the projection area
The top edge in domain is contacted with described heavy doping n-GaN layers, and being provided with substrate layer between the non-elevated regions and the cushion (can
With what is understood, the material of substrate layer may be selected to be silicon).
Described heavy doping n-GaN layers of doping is 1 × 1018/cm3-1×1019/cm3, thickness is 0.1 μm -0.5 μm.
The masking layer of the described heavy doping n-GaN layers strain controlling layer comprising multilayer and multilayer, the strain controlling layer
The number of plies >=0；The number of plies >=0 of the masking layer.
Described trace doped n-GaN layers of doping is 5 × 1018/cm3-5×1019/cm3, thickness is 0.1 μm -0.5 μm.
It should be understood that the material of the cushion may be selected to be gallium nitride, aluminium nitride or aluminum gallium nitride.
It should be understood that the material of the metal level may be selected to be W, Ti/W alloy, TiN, Ni or Au；The barrier metal
The material of layer is Ni/Au alloys, Ti/Al alloys, Ti/Al/Ni/Au alloys or Ti/Al/Pt/Au alloys.
The preparation method of above-mentioned SBD device, comprises the following steps：
Substrate layer is provided；
Cushion (buffer layer) is formed on the substrate layer；
N-GaN layers of heavy doping (heavily doped n-GaN layer) is formed on the cushion；
Formed on described heavy doping n-GaN layers trace doped n-GaN layers (lightly doped n-GaN layer)；
Schottky barrier metal level (barrier metal layer) is formed on the trace doped n-GaN layers；
Remove the substrate layer and form metal level, or metal level is formed by the through hole on the substrate layer.
Above-mentioned SBD device designs vertical atomic structre, can prevent 2DEG from (III-Nitride is utilized, using in schottky
Barrier diode's) the middle heat for occurring of (2-dimensional electron gas) transversal device construction (as shown in Figure 1)
Escape phenomenon.
The vertical stratification of above-mentioned SBD device deletes AlGaN layer so that device action is apart from short, and device bottom is applicable
Contacting metal and then it is easy to hot discharge.Improved structure (metal level is additionally provided with raised areas and non-protruding region) shown in Fig. 3, its
Raised areas are directly contacted with EPI layers, more conducively hot discharge.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses several embodiments of the invention, and its description is more specific and detailed, but simultaneously
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that coming for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of SBD device, it is characterised in that including：
Metal level；
It is arranged on the cushion on the metal level；
It is arranged on heavy doping n-GaN layers on the cushion；
It is arranged on trace doped n-GaN layers on the heavy doping n-GaN layers；
It is arranged on the Schottky barrier metal level on the trace doped n-GaN layers.
2. SBD device according to claim 1, it is characterised in that the metal level is conformed with region and non-protruding area
Domain, the metal level is contacted with heavy doping n-GaN layers.
3. SBD device according to claim 2, it is characterised in that set between the non-elevated regions and the cushion
There is substrate layer.
4. SBD device according to claim 3, it is characterised in that the material of the substrate layer is silicon.
5. the SBD device according to claim any one of 1-4, it is characterised in that the trace doped n-GaN layers doping
Measure is 1 × 1018/cm3-1×1019/cm3, thickness is 0.1 μm -0.5 μm.
6. the SBD device according to claim any one of 1-4, it is characterised in that described heavy doping n-GaN layers of doping
It is 5 × 1018/cm3-5×1019/cm3, thickness is 0.1 μm -0.5 μm.
7. SBD device according to claim 6, it is characterised in that the described heavy doping n-GaN layers strain control comprising multilayer
The masking layer of preparative layer and multilayer, the number of plies >=0 of the strain controlling layer；The number of plies >=0 of the masking layer.
8. the SBD device according to claim any one of 1-4, it is characterised in that the material of the cushion be gallium nitride,
Aluminium nitride or aluminum gallium nitride.
9. the SBD device according to claim any one of 1-4, it is characterised in that the material of the Schottky barrier metal level
Expect to be W, Ti/W, TiN, Ni or Au；The material of the metal level is Ni/Au, Ti/Al, Ti/Al/Ni/Au or Ti/Al/Pt/Au.
10. a kind of preparation method of SBD device, it is characterised in that comprise the following steps：
Substrate layer is provided；
Cushion is formed on the substrate layer；
N-GaN layers of heavy doping is formed on the cushion；
Form trace doped n-GaN layers on described heavy doping n-GaN layers；
Schottky barrier metal level is formed on the trace doped n-GaN layers；
Remove the substrate layer and form metal level, or metal level is formed by the through hole on the substrate layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611184730.7A CN106784022A (en) | 2016-12-20 | 2016-12-20 | SBD device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611184730.7A CN106784022A (en) | 2016-12-20 | 2016-12-20 | SBD device and preparation method thereof |
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| Publication Number | Publication Date |
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| CN106784022A true CN106784022A (en) | 2017-05-31 |
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| CN201611184730.7A Pending CN106784022A (en) | 2016-12-20 | 2016-12-20 | SBD device and preparation method thereof |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003060212A (en) * | 2001-08-20 | 2003-02-28 | Sanken Electric Co Ltd | Schottky barrier diode and manufacturing method therefor |
| CN1555581A (en) * | 2001-07-23 | 2004-12-15 | ���̿����ɷ�����˾ | Gallium nitride based diodes with low forward voltage and low reverse current operation |
| JP2009054659A (en) * | 2007-08-24 | 2009-03-12 | Fuji Electric Device Technology Co Ltd | Manufacturing method of gallium nitride semiconductor device |
| CN104821341A (en) * | 2014-02-05 | 2015-08-05 | 意法半导体(图尔)公司 | Vertical gallium nitride schottky diode |
| CN104851921A (en) * | 2015-05-21 | 2015-08-19 | 中国电子科技集团公司第十三研究所 | GaN-based Schottky diode of vertical structure, and manufacture method thereof |
| CN206532785U (en) * | 2016-12-20 | 2017-09-29 | 英诺赛科（珠海）科技有限公司 | Sbd device |
-
2016
- 2016-12-20 CN CN201611184730.7A patent/CN106784022A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1555581A (en) * | 2001-07-23 | 2004-12-15 | ���̿����ɷ�����˾ | Gallium nitride based diodes with low forward voltage and low reverse current operation |
| JP2003060212A (en) * | 2001-08-20 | 2003-02-28 | Sanken Electric Co Ltd | Schottky barrier diode and manufacturing method therefor |
| JP2009054659A (en) * | 2007-08-24 | 2009-03-12 | Fuji Electric Device Technology Co Ltd | Manufacturing method of gallium nitride semiconductor device |
| CN104821341A (en) * | 2014-02-05 | 2015-08-05 | 意法半导体(图尔)公司 | Vertical gallium nitride schottky diode |
| CN104851921A (en) * | 2015-05-21 | 2015-08-19 | 中国电子科技集团公司第十三研究所 | GaN-based Schottky diode of vertical structure, and manufacture method thereof |
| CN206532785U (en) * | 2016-12-20 | 2017-09-29 | 英诺赛科（珠海）科技有限公司 | Sbd device |
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