CN106783728A - A kind of tungsten CMP technique - Google Patents
A kind of tungsten CMP technique Download PDFInfo
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- CN106783728A CN106783728A CN201611137437.5A CN201611137437A CN106783728A CN 106783728 A CN106783728 A CN 106783728A CN 201611137437 A CN201611137437 A CN 201611137437A CN 106783728 A CN106783728 A CN 106783728A
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- slurry
- tungsten
- grinding
- disk
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to a kind of tungsten CMP technique, belong to technical field of integrated circuits.It is by once grinding, secondary grinding and the disk after being ground for three times, wherein first time, secondary slurry slurry are aluminum oxide, it is for the third time water.The present invention is effectively improved slurry residue problems, significantly saves technique processing cost, and operability is very strong.
Description
Technical field
It is specifically a kind of for tungsten CMP in deep-submicron Bulk CMOS technique the present invention relates to a kind of tungsten CMP technique
The new method of (cmp) processing step, belongs to technical field of integrated circuits.
Background technology
Tungsten is widely used to form embolism to connect different metal layer.Because CVD W films have good clearance filling capability,
The tungsten simultaneously only retained in contact hole is removed by by substantial amounts of tungsten, it becomes possible to form tungsten plug.For still using interconnection between aluminum and copper
IC techniques, most common metallochemistry mechanical lapping is chemical mechanical polishing of tungsten in semiconductor production.Comprising tungsten CMP technique skill
Art has a FA DRAM nanoscale memories, and from 0.13 μm to 0.8 μm technology node CMOS logic device.
Slurry slurry residuals are often had after the completion of conventional tungsten CMP, these residuals can fall the contraposition in photoetching
In mark, and it is very difficult to remove, can so causes technique level litho machine below to align exception, it is specific as shown in figure 1, Fig. 1
In some A points be contraposition abnormity point.
The content of the invention
It is an object of the present invention to overcome the above deficiencies, there is provided one kind improves conventional tungsten CMP, and it can improve
The problem that follow-up photoetching process caused by slurry residuals cannot be aligned.
According to the technical scheme that the present invention is provided, a kind of tungsten CMP technique, step is：
(1) once grind：Tungsten disk is ground, the slurry slurry for using is aluminum oxide, milling time is 25-
35s；
(2) secondary grinding：Secondary grinding is carried out to step (1) gained disk, medium titanium dioxide is voluntarily judged by equipment
The terminal time of silicon, and after terminal time is found in grinding, then add mill 10-15s, the slurry slurry for using to be oxidation
Aluminium, total milling time is 55-65s；
(3) three grindings：Three grindings are carried out to gained disk in step (2), the slurry slurry for using is water, is ground
It is 20-25s to consume time.
Beneficial effects of the present invention：The present invention changes the partial mill slurry in tungsten CMP technique into water, and milling time is done
Certain adjustment.The present invention can be effectively improved slurry residue problems, significantly save technique processing cost, and operability is very
By force.
Brief description of the drawings
Fig. 1 is the abnormal schematic diagram of traditional handicraft level litho machine contraposition.
Fig. 2 is first step grinding schematic diagram.
Fig. 3 is second step grinding schematic diagram.
Fig. 4 is the 3rd step grinding schematic diagram.
Fig. 5 is photoetching alignment mark schematic diagram of the present invention.
Description of reference numerals：A, contraposition abnormity point；1st, tungsten；2nd, titanium oxide/titanium；3rd, medium；B, alignment mark.
Specific embodiment
As in Figure 2-4：A kind of tungsten CMP technique, step is：
(1) once grind：Tungsten disk is ground, specifically as shown in Fig. 2 the slurry for using is aluminum oxide, grinding
Set time is 30s；
(2) secondary grinding：Secondary grinding is carried out to step (1) gained disk；Specifically as shown in figure 3, the slurry for using
It is aluminum oxide, is ground by the terminal time for finding medium silica, and after terminal time is found in grinding, then add
Mill 10-15s, it is ensured that tungsten and titanium nitride/titanium have been ground, total milling time is 65s or so；
(3) three grindings：Three grindings are carried out to gained disk in step (2), it is specific as shown in figure 4, without slurry only
There is water, milling time is 25s；
The disk completed using present invention process, is remained without slurry substantially, and photoetching alignment mark B is clear, specific such as Fig. 5
It is shown, there is no contraposition abnormity point as shown in Figure 1.
The present invention substitutes the CMP lapping liquids during Fig. 4 with water, and lapping liquid originally is for overground a part of two
Silica, but can make a tungsten slightly protruding part, after aluminium lid is covered to it, not enough put down at covering using original technique
It is whole.
But after lapping liquid is changed to water, the CMP of this step can still rely on the effect of physics slightly to grind off some dioxies
SiClx, but amount of grinding is few, while can also be cleaned to it；Using after present invention grinding, both no slurry was remained, tungsten plug
Will not be raised, coverage rate relatively flat.
Testing electrical property hole resistance is being eventually passed through completely just using disk (wafer) after common process condition and new process conditions
Often.
Claims (1)
1. a kind of tungsten CMP technique, it is characterized in that, comprise the following steps：
(1) once grind：Tungsten disk is ground, the slurry for using is aluminum oxide, milling time is 25-35s；
(2) secondary grinding：Secondary grinding is carried out to step (1) gained disk, medium silica is voluntarily judged by equipment
Terminal time, and after terminal time is found in grinding, then adding mill 10-15s, the slurry for using is aluminum oxide, when always grinding
Between be 55-65s；
(3) three grindings：Three grindings are carried out to gained disk in step (2), the slurry for using is water, and milling time is
20-25s。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611137437.5A CN106783728A (en) | 2016-12-10 | 2016-12-10 | A kind of tungsten CMP technique |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611137437.5A CN106783728A (en) | 2016-12-10 | 2016-12-10 | A kind of tungsten CMP technique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106783728A true CN106783728A (en) | 2017-05-31 |
Family
ID=58875452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611137437.5A Pending CN106783728A (en) | 2016-12-10 | 2016-12-10 | A kind of tungsten CMP technique |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106783728A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080003796A1 (en) * | 2006-06-30 | 2008-01-03 | Hynix Semiconductor Inc. | Method of forming bit line of semiconductor device |
| CN101459124A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method and wafer cleaning method |
| CN102110641A (en) * | 2009-12-29 | 2011-06-29 | 中芯国际集成电路制造(上海)有限公司 | Method for overcoming tungsten plug sagging shortcoming during chemical-mechanical polishing process |
| CN102126181A (en) * | 2010-01-14 | 2011-07-20 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN104637863A (en) * | 2013-11-14 | 2015-05-20 | 盛美半导体设备（上海）有限公司 | Tungsten plug formation method |
-
2016
- 2016-12-10 CN CN201611137437.5A patent/CN106783728A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080003796A1 (en) * | 2006-06-30 | 2008-01-03 | Hynix Semiconductor Inc. | Method of forming bit line of semiconductor device |
| CN101459124A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical grinding method and wafer cleaning method |
| CN102110641A (en) * | 2009-12-29 | 2011-06-29 | 中芯国际集成电路制造(上海)有限公司 | Method for overcoming tungsten plug sagging shortcoming during chemical-mechanical polishing process |
| CN102126181A (en) * | 2010-01-14 | 2011-07-20 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method |
| CN104637863A (en) * | 2013-11-14 | 2015-05-20 | 盛美半导体设备（上海）有限公司 | Tungsten plug formation method |
Non-Patent Citations (1)
| Title |
|---|
| 李薇薇 等: "IC制备中钨插塞CMP技术的研究", 《半导体技术》 * |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170531 |
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| RJ01 | Rejection of invention patent application after publication |