CN106783726A - Compound substrate and preparation method thereof, semiconductor devices - Google Patents
Compound substrate and preparation method thereof, semiconductor devices Download PDFInfo
- Publication number
- CN106783726A CN106783726A CN201611260201.0A CN201611260201A CN106783726A CN 106783726 A CN106783726 A CN 106783726A CN 201611260201 A CN201611260201 A CN 201611260201A CN 106783726 A CN106783726 A CN 106783726A
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- China
- Prior art keywords
- gallium nitride
- layer
- compound substrate
- nitride layer
- sapphire
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- 239000000758 substrate Substances 0.000 title claims abstract description 70
- 150000001875 compounds Chemical class 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 57
- 239000010980 sapphire Substances 0.000 claims abstract description 57
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 238000005498 polishing Methods 0.000 claims description 4
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 238000000034 method Methods 0.000 description 9
- 239000012071 phase Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000005411 Van der Waals force Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- -1 gallium nitride (GaN) compound Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a kind of preparation method of compound substrate, comprise the following steps：In silicon wafer growth gallium nitride layer；The gallium nitride layer is bonded with sapphire sheet, bonding body is formed；The silicon wafer is peeled off from the gallium nitride layer.Above-mentioned compound substrate is by the layer of growing gallium nitride on silicon.And gallium nitride layer is mutually bonded with sapphire sheet, and silicon wafer is peeled off from gallium nitride layer, it is short to be so compared to the traditional direct growing gallium nitride in sapphire sheet layer time, improves the production efficiency of compound substrate.
Description
Technical field
The present invention relates to electrical device technical field, more particularly to compound substrate and preparation method thereof, semiconductor devices.
Background technology
At present, the substrate of some semiconductor devices, by sapphire (Al2O3) mocvd method growing gallium nitride is used on piece
(GaN) layer is obtained.
And it is above-mentioned in sapphire (Al2O3) growth of growing gallium nitride (GaN) layer is slower on piece, and then make in actual production
During produce gallium nitride (GaN) compound substrate it is less efficient.
The content of the invention
Based on this, it is necessary to gallium nitride layer growth is produced in sapphire sheet relatively slowly for above-mentioned, causes to produce gallium nitride
(GaN) the less efficient problem of compound substrate, there is provided a kind of high efficiency production compound substrate and preparation method thereof, semiconductor device
Part.
A kind of preparation method of compound substrate, comprises the following steps：
In silicon wafer growth gallium nitride layer；
The gallium nitride layer is bonded with sapphire sheet, bonding body is formed；
The silicon wafer is peeled off from the gallium nitride layer.
Above-mentioned compound substrate is by the layer of growing gallium nitride on silicon.And gallium nitride layer is mutually bonded with sapphire sheet, most
After silicon wafer is peeled off from gallium nitride layer, be so compared to the traditional direct growing gallium nitride in sapphire sheet layer time
It is short, improve the production efficiency of compound substrate.
An implementation method, described to be grown to hydride gas phase epitaxial growth wherein.
An implementation method wherein, the thickness of the gallium nitride layer is 10 μm -50 μm.
An implementation method wherein, it is described the gallium nitride layer is bonded with sapphire sheet the step of after, it is described
The preparation method of compound substrate also includes：
The sapphire sheet in bonding body is thinning.
An implementation method, described thinning for grinding and polishing is thinning wherein.
A kind of compound substrate, including：
Sapphire Substrate layer；
It is bonded to the gallium nitride layer on the Sapphire Substrate layer.
Above-mentioned compound substrate by Sapphire Substrate layer with gallium nitride layer Direct Bonding and obtain, be so compared to traditional
Directly the growing gallium nitride layer time is short in sapphire sheet, improves the production efficiency of compound substrate.
An implementation method wherein, the thickness of the gallium nitride layer is 10 μm -50 μm.
An implementation method wherein, the thickness of the Sapphire Substrate layer is 430-750um.
An implementation method wherein, the Sapphire Substrate layer is rounded, and the circular sapphire substrate layer is straight
Footpath size is more than or equal to 2 inches.
A kind of semiconductor devices, above-described compound substrate.
The compound substrate of above-mentioned semiconductor device by Sapphire Substrate layer with gallium nitride layer Direct Bonding and obtain, such phase
It is short to be compared to the traditional direct growing gallium nitride in sapphire sheet layer time, improves the production efficiency of compound substrate.
Brief description of the drawings
Fig. 1 is the flow chart of the preparation method of the compound substrate of the first preferred embodiment of the invention；
Fig. 2 be the first preferred embodiment of the invention compound substrate manufacturing process in first structure schematic diagram；
Fig. 3 be the first preferred embodiment of the invention compound substrate manufacturing process in the second structural representation；
Fig. 4 be the first preferred embodiment of the invention compound substrate manufacturing process in the 3rd structural representation.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
It should be noted that when element is referred to as " being arranged at " another element, it can directly on another element
Or can also there is element placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or may be simultaneously present centering elements.Term as used herein " vertical ", " level ", " left side ",
For illustrative purposes only, it is unique implementation method to be not offered as " right side " and similar statement.
Unless otherwise defined, all of technologies and scientific terms used here by the article with belong to technical field of the invention
The implication that technical staff is generally understood that is identical.The term for being used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein " and/or " include one or more phases
The arbitrary and all of combination of the Listed Items of pass.
As shown in figure 1, the first preferred embodiment of the invention discloses a kind of preparation method of compound substrate, the composite lining
The preparation method at bottom is comprised the following steps：
S1：In silicon wafer growth gallium nitride layer；
Silicon wafer 110 in present embodiment can also be commercially available, can also be obtained by cutting silicon crystal bar plus subsequent treatment.
This is not limited by the present invention.
In the present embodiment, the thickness of silicon wafer 110 is 1300 μm.It is, of course, understood that the thickness of silicon wafer
675 μm are can also be, also or 725 μm.The present invention does not do specifically limited to the thickness of silicon wafer 110, can use this area
Various conventional thickness.
As shown in Fig. 2 on above-mentioned silicon wafer 110 growing gallium nitride (GaN) layer 120, it is preferable that growth herein can be with
Using the growth of hydride gas-phase epitaxy (Hydride Vapor Phase Epitaxy, HVPE), using the hydrite vapor phase outside
The growth prolonged, the speed of growth is very fast, and the crystal for obtaining gallium nitride is preferable.
Usually, 10 μm -50 μm or so of the thickness of the growth of above-mentioned gallium nitride layer 120, and the gallium nitride layer 120 grows into this
Thickness is generally required 0.15-1 hours or so.
S2：The gallium nitride layer is bonded with sapphire sheet, bonding body is formed；
As shown in figure 3, then, in this step, by the sapphire sheet of gallium nitride layer 120 and resulting in previous step
130 bondings.
Sapphire sheet 130 in this step can be obtained with after commercially available, or it is commercially available after obtained as reduction processing, it is also possible to pass through
Wire cutting sapphire ingot adds subsequent treatment to obtain, and this is not limited by the present invention.
Above-mentioned bonding (bonding) refers to：By two panels surface cleaning, the homogeneity of atomically flating or dissimilar materials certain
Under the conditions of directly in conjunction with, by Van der Waals force, molecular force even atomic force be integrally formed bonding chip.
Due to gallium nitride layer of the invention 120 with sapphire sheet 130 by bonding together to form, therefore sapphire sheet 130 and nitrogen
The adhesion changed between gallium layer 120 is very strong, and its bond strength may be up to 12MPa.
Preferably, sapphire sheet 130 with diameter greater than equal to 6 inches.Sapphire sheet 130 for example from 6 inches, or
8 inches of sapphire sheet 130.
After bonding, reduction processing can be made to above-mentioned sapphire sheet, to form Sapphire Substrate layer.Usually, it is thinning
Mode is that grinding and polishing is thinning.
In the present embodiment, the thickness of sapphire sheet 130 can use the various conventional thickness in this area, no longer go to live in the household of one's in-laws on getting married herein
State.
S3：The silicon wafer is peeled off from the gallium nitride layer.
Such as Fig. 4 after the above step, by above-mentioned silicon wafer 110 from 120 layers of upper stripping of above-mentioned gallium nitride.Stripping herein
Mode can use stripping mode commonly used in the art, the present invention repeating this.
Compound substrate 100 in present embodiment is by the growing gallium nitride layer 120 on silicon wafer 110.And make gallium nitride layer
120 are mutually bonded with sapphire sheet 130, silicon wafer 110 is peeled off from gallium nitride layer 120, are so compared to traditional
Directly the growing gallium nitride layer time is short in sapphire sheet, improves the production efficiency of compound substrate.
Second preferred embodiment of the invention discloses a kind of compound substrate, the compound substrate include Sapphire Substrate layer with
And it is bonded to the gallium nitride layer on the Sapphire Substrate layer.
Usually, the thickness of the gallium nitride layer is 8 μm -10 μm, and the thickness of Sapphire Substrate layer is 430-750um.
Sapphire Substrate layer is rounded, and the diameter of the circular sapphire substrate layer 130 is more than or equal to 2 English
It is very little.
Above-mentioned bonding (bonding) refers to：By two panels surface cleaning, the homogeneity of atomically flating or dissimilar materials certain
Under the conditions of directly in conjunction with, by Van der Waals force, molecular force even atomic force be integrally formed bonding chip.
Due to gallium nitride layer of the invention with Sapphire Substrate layer by bonding together to form, therefore Sapphire Substrate layer and nitridation
Adhesion between gallium layer is very strong, and its bond strength may be up to 12MPa.
Preferably, Sapphire Substrate layer with diameter greater than equal to 6 inches.Sapphire sheet for example from 6 inches, or 8
The sapphire sheet of inch.
After bonding, reduction processing can be made to above-mentioned sapphire sheet, to form Sapphire Substrate layer.Usually, it is thinning
Mode is that grinding and polishing is thinning.
In the present embodiment, the thickness of Sapphire Substrate can use the various conventional thickness in this area, no longer go to live in the household of one's in-laws on getting married herein
State.
Compound substrate in present embodiment is obtained by Sapphire Substrate layer and gallium nitride layer Direct Bonding, is so compared
It is short compared with the traditional direct growing gallium nitride in sapphire sheet layer time, improve the production efficiency of compound substrate.
3rd preferred embodiment of the invention discloses a kind of semiconductor devices, and the semiconductor devices includes above-described
Compound substrate 100.
The compound substrate 100 of the semiconductor devices in present embodiment is by Sapphire Substrate layer and gallium nitride layer Direct Bonding
And obtain, it is short to be so compared to the traditional direct growing gallium nitride in sapphire sheet layer time, improves compound substrate
Production efficiency.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses several embodiments of the invention, and its description is more specific and detailed, but simultaneously
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that coming for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of preparation method of compound substrate, it is characterised in that comprise the following steps：
In silicon wafer growth gallium nitride layer；
The gallium nitride layer is bonded with sapphire sheet, bonding body is formed；
The silicon wafer is peeled off from the gallium nitride layer.
2. the preparation method of compound substrate according to claim 1, it is characterised in that described to be grown to outside hydrite vapor phase
Epitaxial growth.
3. the preparation method for meeting substrate according to claim 1, it is characterised in that the thickness of the gallium nitride layer is 10
μm-50μm。
4. the preparation method of compound substrate according to claim 1, it is characterised in that it is described by the gallium nitride layer with
After the step of sapphire sheet is bonded, the preparation method of the compound substrate also includes：
The sapphire sheet in bonding body is thinning.
5. the preparation method of compound substrate according to claim 4, it is characterised in that described thinning for grinding and polishing subtracts
It is thin.
6. a kind of compound substrate, it is characterised in that including：
Sapphire Substrate layer；
It is bonded to the gallium nitride layer on the Sapphire Substrate layer.
7. compound substrate according to claim 6, it is characterised in that the thickness of the gallium nitride layer is 10 μm -50 μm.
8. compound substrate according to claim 6, it is characterised in that the thickness of the Sapphire Substrate layer is 430-
750um。
9. the compound substrate according to claim 6 or 7, it is characterised in that the Sapphire Substrate layer is rounded and described
The diameter of circular sapphire substrate layer is more than or equal to 2 inches.
10. a kind of semiconductor devices, it is characterised in that including the compound substrate described in claim any one of 6-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611260201.0A CN106783726A (en) | 2016-12-30 | 2016-12-30 | Compound substrate and preparation method thereof, semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611260201.0A CN106783726A (en) | 2016-12-30 | 2016-12-30 | Compound substrate and preparation method thereof, semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106783726A true CN106783726A (en) | 2017-05-31 |
Family
ID=58953846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611260201.0A Pending CN106783726A (en) | 2016-12-30 | 2016-12-30 | Compound substrate and preparation method thereof, semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106783726A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6335263B1 (en) * | 2000-03-22 | 2002-01-01 | The Regents Of The University Of California | Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials |
| CN101814537A (en) * | 2009-02-19 | 2010-08-25 | 中国科学院半导体研究所 | Gallium nitride based avalanche detector and preparation method thereof |
| JP2010245349A (en) * | 2009-04-07 | 2010-10-28 | Toshiba Corp | Semiconductor device, and method of manufacturing the same |
| CN102263119A (en) * | 2010-05-24 | 2011-11-30 | Lg伊诺特有限公司 | Light emitting device array, method for fabricating light emitting device array and light emitting device package |
| CN103985664A (en) * | 2014-04-10 | 2014-08-13 | 中国电子科技集团公司第五十五研究所 | Method for exfoliating and transferring silicon-based gallium nitride epitaxial layer |
| US20150102498A1 (en) * | 2013-10-14 | 2015-04-16 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
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| CN104576714A (en) * | 2015-01-23 | 2015-04-29 | 北京大学 | High-migration-rate GaN-base heterostructure on silicon substrate and preparing method thereof |
-
2016
- 2016-12-30 CN CN201611260201.0A patent/CN106783726A/en active Pending
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| US6335263B1 (en) * | 2000-03-22 | 2002-01-01 | The Regents Of The University Of California | Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials |
| CN101814537A (en) * | 2009-02-19 | 2010-08-25 | 中国科学院半导体研究所 | Gallium nitride based avalanche detector and preparation method thereof |
| JP2010245349A (en) * | 2009-04-07 | 2010-10-28 | Toshiba Corp | Semiconductor device, and method of manufacturing the same |
| CN102263119A (en) * | 2010-05-24 | 2011-11-30 | Lg伊诺特有限公司 | Light emitting device array, method for fabricating light emitting device array and light emitting device package |
| CN104584214A (en) * | 2012-09-05 | 2015-04-29 | 皇家飞利浦有限公司 | Laser de-bond of carrier wafer from device wafer |
| US20150102498A1 (en) * | 2013-10-14 | 2015-04-16 | Corning Incorporated | Carrier-bonding methods and articles for semiconductor and interposer processing |
| CN103985664A (en) * | 2014-04-10 | 2014-08-13 | 中国电子科技集团公司第五十五研究所 | Method for exfoliating and transferring silicon-based gallium nitride epitaxial layer |
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Application publication date: 20170531 |