CN106783574A - A kind of method for solving the problems, such as stripping metal processing procedure threshold voltage shift - Google Patents
A kind of method for solving the problems, such as stripping metal processing procedure threshold voltage shift Download PDFInfo
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- CN106783574A CN106783574A CN201710079380.6A CN201710079380A CN106783574A CN 106783574 A CN106783574 A CN 106783574A CN 201710079380 A CN201710079380 A CN 201710079380A CN 106783574 A CN106783574 A CN 106783574A
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- processing procedure
- threshold voltage
- metal processing
- stripping metal
- solving
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- 238000000034 method Methods 0.000 title claims abstract description 139
- 239000002184 metal Substances 0.000 title claims abstract description 81
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 81
- 238000012545 processing Methods 0.000 title claims abstract description 70
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000010931 gold Substances 0.000 claims abstract description 19
- 229910052737 gold Inorganic materials 0.000 claims abstract description 19
- 238000012360 testing method Methods 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims abstract description 11
- 230000005855 radiation Effects 0.000 claims abstract description 11
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 238000001704 evaporation Methods 0.000 claims abstract description 9
- 230000008020 evaporation Effects 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 230000008569 process Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 238000002845 discoloration Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
The invention provides a kind of method for solving the problems, such as stripping metal processing procedure threshold voltage shift, including：In the technical process of manufacture product, the stripping metal processing procedure of back of the body gold is performed using Low emissivity equipment；Yield test is carried out to product after product is made.For example, the Low emissivity equipment is sputtering equipment.Evaporation equipment is not used during the stripping metal processing procedure of back of the body gold is performed, evaporation technology is not used during the stripping metal processing procedure of back of the body gold is performed.In the method for solving the problems, such as stripping metal processing procedure threshold voltage shift of the invention, back of the body gold is using radiation than relatively low equipment, such as sputtering equipment, to reduce positive charge capture, so as to recover threshold voltage, stripping metal processing procedure threshold voltage shift is solved the problems, such as, so that yield test percent of pass is greatly improved.Thus, the present invention effectively provides a kind of method that stripping metal processing procedure threshold voltage shift can be solved the problems, such as in the case where Ni cavities and metal discoloration is avoided result in.
Description
Technical field
The present invention relates to field of semiconductor manufacture, and in particular to the stripping metal processing procedure in semiconductor technology；More specifically
Say, the present invention relates to a kind of method for solving the problems, such as stripping metal processing procedure threshold voltage shift.
Background technology
For power MOS (Metal Oxide Semiconductor, metal-oxide semiconductor (MOS)) field-effect transistor point
It is junction transistor and insulated gate transistor, but generally refers mainly to the MOS type in insulated-gate type, abbreviation power MOSFET
(Power MOSFET).The characteristics of power MOSFET is that drain current is controlled with grid voltage, drive circuit it is simple, it is necessary to
Driving power is small, and switching speed is fast, and working frequency is high, good heat stability, but its current capacity is small, resistance to force down.
And, since 1976 develop power MOSFET, due to the development of semiconductor process technique, power
The performance of MOSFET is improved constantly.High-voltage power MOSFET its operating voltage is up to 1000V；The resistance of low on-resistance MOSFET
Only lOm Ω；Operating frequency range reaches several megahertzs from direct current；Safeguard measure is more and more perfect；And develop various SMD work(
Rate MOSFET.In addition, price is also constantly reduced, make using more and more extensively, many places replace bipolar transistors.
Yield test is a kind of test link generally to be carried out in semiconductor product manufacturing process.
Can there is low threshold voltage (Vt) in yield test phase in some power MOS field effect transistor products,
These problems are likely due to stripping metal processing procedure and cause.In some cases, the threshold voltage of power MOS transistor
Even it is reduced to the degree of 2.0V.
Specifically, low threshold voltage problem is caused by evaporation technology electric charge.In order to solve this problem,
Under drying condition, such as dried 30 minutes under 450 degrees Celsius, threshold voltage can recover, but the side effect for thus bringing is
Ni cavities and metal can be caused to change colour.
Accordingly, it is desirable to be able to provide one kind can solve to peel off gold in the case where Ni cavities and metal discoloration is avoided result in
The method for belonging to processing procedure threshold voltage shift problem.
The content of the invention
The technical problems to be solved by the invention are directed to and there is drawbacks described above in the prior art, there is provided one kind can keep away
The method for exempting to cause Ni cavities and metal to solve the problems, such as stripping metal processing procedure threshold voltage shift in the case of changing colour.
In order to realize above-mentioned technical purpose, according to the present invention, there is provided it is inclined that one kind solves stripping metal processing procedure threshold voltage
The method of shifting problem, including：In the technical process of manufacture product, the stripping metal system of back of the body gold is performed using Low emissivity equipment
Journey.
Preferably, the described method for solving the problems, such as stripping metal processing procedure threshold voltage shift is further included：Second step
Suddenly：Yield test is carried out to product after product is made.
Preferably, in the described method for solving the problems, such as stripping metal processing procedure threshold voltage shift, the Low emissivity sets
Standby is sputtering equipment.
Preferably, in the described method for solving the problems, such as stripping metal processing procedure threshold voltage shift, back of the body gold is being performed
Evaporation equipment is not used during stripping metal processing procedure.
Preferably, in the described method for solving the problems, such as stripping metal processing procedure threshold voltage shift, back of the body gold is being performed
Evaporation technology is not used during stripping metal processing procedure.
Preferably, in the described method for solving the problems, such as stripping metal processing procedure threshold voltage shift, sputtering equipment is used
Material be TiNiAg alloys.
Preferably, in the described method for solving the problems, such as stripping metal processing procedure threshold voltage shift, the Low emissivity sets
Standby radiation is less than threshold value radiation value.
Preferably, it is described to solve to peel off in the described method for solving the problems, such as stripping metal processing procedure threshold voltage shift
The method of metal procedure threshold voltage shift problem is used for the stripping metal processing procedure of power MOS transistor.
Preferably, it is described to solve to peel off in the described method for solving the problems, such as stripping metal processing procedure threshold voltage shift
The method of metal procedure threshold voltage shift problem is used to solve the problems, such as low threshold voltage.
Preferably, it is described to solve to peel off in the described method for solving the problems, such as stripping metal processing procedure threshold voltage shift
The method of metal procedure threshold voltage shift problem is used to solve the Low threshold that power MOS transistor is caused in stripping metal processing procedure
Voltage problem.
In the method for solving the problems, such as stripping metal processing procedure threshold voltage shift of the invention, back of the body gold is using radiation than relatively low
Equipment (such as, sputter) reduce positive charge capture, so as to recover threshold voltage, solve stripping metal processing procedure threshold voltage
Offset problem, so that yield test percent of pass is greatly improved.
Thus, the present invention effectively provides one kind and can be solved in the case where Ni cavities and metal discoloration is avoided result in
The method of stripping metal processing procedure threshold voltage shift problem.
And, proved through experimental test, by using solution stripping metal processing procedure threshold according to the preferred embodiment of the invention
The method of threshold voltage offset problem, can cause that the threshold voltage of power MOS transistor recovers to 3.0V's to 3.5V from 2.0V
Scope.
The technique effect of design of the invention, concrete structure and generation is described further below with reference to accompanying drawing, with
It is fully understood from the purpose of the present invention, feature and effect.
Brief description of the drawings
With reference to accompanying drawing, and by reference to following detailed description, it will more easily have more complete understanding to the present invention
And its adjoint advantages and features is more easily understood, wherein：
Fig. 1 schematically shows the principle diagram of stripping metal processing procedure.
Fig. 2 schematically shows solution stripping metal processing procedure threshold voltage shift according to the preferred embodiment of the invention and asks
The flow chart of the method for topic.
It should be noted that accompanying drawing is used to illustrate the present invention, it is not intended to limit the present invention.Note, represent that the accompanying drawing of structure can
Can be not necessarily drawn to scale.Also, in accompanying drawing, same or similar element indicates same or similar label.
Specific embodiment
In order that present disclosure is more clear and understandable, with reference to specific embodiments and the drawings to of the invention interior
Appearance is described in detail.
First, the inefficacy mechanism of stripping metal processing procedure threshold voltage shift problem, i.e. oxide trap electric charge mould are first described
Type.Fig. 1 schematically shows the principle diagram of stripping metal processing procedure.As shown in figure 1, when electron beam clashes into source, electronics leaves
At the same time silver atoms, the electronics with highest energy in subsequent outmost track, will produce by innermost track
Photon.X-ray enters oxide and generation electron hole pair, and electron hole pair can be oxidized thing impurity or defect capture,
Then defect is charged.As shown in figure 1, this will cause threshold voltage to be decayed.Hole is by the quilt due to the annealing under nitrogen atmosphere
Retract silica trap.
Therefore, the present invention proposes a kind of method for solving the problems, such as stripping metal processing procedure threshold voltage shift.In the present invention
The method for solving the problems, such as stripping metal processing procedure threshold voltage shift in, the back of the body gold using radiation (such as, is splashed than relatively low equipment
Penetrate) come reduce positive charge capture, so as to recover threshold voltage.
Particularly preferred embodiment of the invention is described below.
Fig. 2 has schematically gone out according to the preferred embodiment of the invention to solve the problems, such as stripping metal processing procedure threshold voltage shift
Method flow chart.
As shown in Fig. 2 the side for solving the problems, such as stripping metal processing procedure threshold voltage shift according to the preferred embodiment of the invention
Method includes：
First step S1：In the technical process of manufacture product, the stripping metal of back of the body gold is performed using Low emissivity equipment
Processing procedure；For example, in the technical process of manufacture power MOS transistor product, the stripping of back of the body gold is performed using Low emissivity equipment
Metal procedure；
Wherein, for example, the Low emissivity equipment is sputtering equipment.Thus, for example, in first step S1, manufacturing work(
In the technical process of rate MOS transistor product, the stripping metal processing procedure of back of the body gold is performed using sputtering equipment.
Thus, in the case where the Low emissivity equipment is sputtering equipment, in the mistake of the stripping metal processing procedure for performing back of the body gold
Evaporation equipment is not used in journey.In other words, in the case where the Low emissivity equipment is sputtering equipment, the stripping of back of the body gold is being performed
Evaporation technology is not used during metal procedure.For example, in the case where the Low emissivity equipment is sputtering equipment, sputtering sets
The standby material for using can be TiNiAg alloys.
Or, for example, the radiation of the Low emissivity equipment is less than threshold value radiation value.Wherein, for the threshold value radiation value,
Can specifically be set according to the overall conditions of concrete technology,
As shown in Fig. 2 second step S2 can be performed after being subsequently made product：Product is carried out after product is made
Yield is tested.If high power MOS transistor product during the product, to height after power MOS transistor product is made
Power MOS transistor product carries out yield test.
In the method for solving the problems, such as stripping metal processing procedure threshold voltage shift of the invention, back of the body gold is using radiation than relatively low
Equipment (such as, sputter) reduce positive charge capture, so as to recover threshold voltage, solve stripping metal processing procedure threshold voltage
Offset problem, thus second step yield test percent of pass greatly improve.
Thus, the present invention effectively provides one kind and can be solved in the case where Ni cavities and metal discoloration is avoided result in
The method of stripping metal processing procedure threshold voltage shift problem.
And, proved through experimental test, by using solution stripping metal processing procedure threshold according to the preferred embodiment of the invention
The method of threshold voltage offset problem, can cause that the threshold voltage of power MOS transistor recovers to 3.0V's to 3.5V from 2.0V
Scope.
In some applications, the stripping metal processing procedure threshold voltage shift of solving the problems, such as according to the preferred embodiment of the invention
Method is advantageously used for the stripping metal processing procedure of power MOS transistor.And, in some applications, according to of the invention preferred
The method for solving the problems, such as stripping metal processing procedure threshold voltage shift of embodiment is advantageously used for solving the problems, such as low threshold voltage.
More specifically, in some concrete applications, solution stripping metal processing procedure threshold voltage shift according to the preferred embodiment of the invention
The method of problem is advantageously used for solving the problems, such as the low threshold voltage that power MOS transistor is caused in stripping metal processing procedure.
Furthermore, it is necessary to explanation, unless stated otherwise or points out, term " first " otherwise in specification, " the
Two ", description such as " 3rd " is used only for distinguishing each component, element, step in specification etc., without being intended to indicate that each
Logical relation or ordinal relation between component, element, step etc..
Although it is understood that the present invention is disclosed as above with preferred embodiment, but above-described embodiment and being not used to
Limit the present invention.For any those of ordinary skill in the art, in the case where technical solution of the present invention ambit is not departed from,
Many possible variations and modification are all made to technical solution of the present invention using the technology contents of the disclosure above, or is revised as
With the Equivalent embodiments of change.Therefore, every content without departing from technical solution of the present invention, according to technical spirit pair of the invention
Any simple modification, equivalent variation and modification made for any of the above embodiments, still fall within the scope of technical solution of the present invention protection
It is interior.
And should also be understood that the present invention is not limited thereto place description specific method, compound, material, system
Technology, usage and application are made, they can change.It should also be understood that term described herein is used merely to describe specific
Embodiment, rather than for limiting the scope of the present invention.Must be noted that herein and being used in appended claims
Singulative " one ", " one kind " and " being somebody's turn to do " include complex reference, unless context explicitly indicates that contrary.Therefore, example
Such as, the citation to one or more elements is meaned to the citation of " element ", and including known to those skilled in the art
Its equivalent.Similarly, as another example, the citation of " step " or " device " is meaned to one or
The citation of multiple steps or device, and potentially include secondary step and second unit.Should be managed with broadest implication
All conjunctions that solution is used.Therefore, word "or" should be understood that the definition with logical "or", rather than logical exclusive-OR
Definition, unless context explicitly indicates that contrary.Structure described herein will be understood as also quoting from the function of the structure
Equivalent.Can be interpreted that approximate language should be understood like that, unless context explicitly indicates that contrary.Compare herein
Terminology used in the present invention " include/include " and term " have/possessing " are used to specify feature, integer, the step of statement
Or the presence of component, but it is not excluded that one or more of the other feature, integer, step, component or its combination presence or add
Plus.
And, unless otherwise prescribed, belonging to the meaning and the present invention of all technologies used herein and/or scientific and technical terminology
The general significance that the those of ordinary skill in field is understood is identical.Although similar with method described herein and material or equivalent
Method and material can be used in application of the invention and test, but the method and/or material of example is described below.Going out
In the case of now conflicting, it is defined by the patent specification comprising definition.Additionally, what material, method and example were merely exemplary,
Without necessarily for limitation.The realization of the method and/or system of 4 embodiment of the present invention may include manual, automatically or in combination
Perform selected task.And, the real instrument and equipment of the embodiment of the method according to the invention and/or system, using behaviour
Make system and several selected tasks are realized by hardware, software or its combination.
Claims (10)
1. a kind of method for solving the problems, such as stripping metal processing procedure threshold voltage shift, it is characterised in that including：In manufacture product
In technical process, the stripping metal processing procedure of back of the body gold is performed using Low emissivity equipment.
2. the method for solving the problems, such as stripping metal processing procedure threshold voltage shift according to claim 1, it is characterised in that enter
One step includes：Yield test is carried out to product after product is made.
3. the method for solving the problems, such as stripping metal processing procedure threshold voltage shift according to claim 1 and 2, its feature exists
In the Low emissivity equipment is sputtering equipment.
4. the method for solving the problems, such as stripping metal processing procedure threshold voltage shift according to claim 3, it is characterised in that
Evaporation equipment is not used during the stripping metal processing procedure for performing back of the body gold.
5. the method for solving the problems, such as stripping metal processing procedure threshold voltage shift according to claim 3, it is characterised in that
Evaporation technology is not used during the stripping metal processing procedure for performing back of the body gold.
6. the method for solving the problems, such as stripping metal processing procedure threshold voltage shift according to claim 3, it is characterised in that splash
The material that jet device is used is TiNiAg alloys.
7. the method for solving the problems, such as stripping metal processing procedure threshold voltage shift according to claim 1 and 2, its feature exists
In the radiation of the Low emissivity equipment is less than threshold value radiation value.
8. the method for solving the problems, such as stripping metal processing procedure threshold voltage shift according to claim 1 and 2, its feature exists
In the method for solving the problems, such as stripping metal processing procedure threshold voltage shift is used for the stripping metal processing procedure of power MOS transistor.
9. the method for solving the problems, such as stripping metal processing procedure threshold voltage shift according to claim 1 and 2, its feature exists
In the method for solving the problems, such as stripping metal processing procedure threshold voltage shift is used to solve the problems, such as low threshold voltage.
10. the method for solving the problems, such as stripping metal processing procedure threshold voltage shift according to claim 1 and 2, its feature exists
In the method for solving the problems, such as stripping metal processing procedure threshold voltage shift is used to solve power MOS transistor in stripping metal
The low threshold voltage problem that processing procedure is caused.
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|---|---|---|---|---|
| US20090325380A1 (en) * | 2008-06-27 | 2009-12-31 | Disco Corporation | Method for forming electrode on semiconductor wafer |
| CN101853884A (en) * | 2009-03-27 | 2010-10-06 | 株式会社半导体能源研究所 | Semiconductor device |
| CN201927608U (en) * | 2010-11-23 | 2011-08-10 | 深圳市科瑞半导体有限公司 | High-frequency transistor |
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| CN106024761A (en) * | 2016-05-26 | 2016-10-12 | 中山港科半导体科技有限公司 | Back metal structure of power semiconductor chip and preparation method thereof |
-
2017
- 2017-02-14 CN CN201710079380.6A patent/CN106783574A/en active Pending
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| CN101853884A (en) * | 2009-03-27 | 2010-10-06 | 株式会社半导体能源研究所 | Semiconductor device |
| CN201927608U (en) * | 2010-11-23 | 2011-08-10 | 深圳市科瑞半导体有限公司 | High-frequency transistor |
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