CN106783546A - A kind of low temperature deposition method of DARC films - Google Patents
A kind of low temperature deposition method of DARC films Download PDFInfo
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- CN106783546A CN106783546A CN201611219771.5A CN201611219771A CN106783546A CN 106783546 A CN106783546 A CN 106783546A CN 201611219771 A CN201611219771 A CN 201611219771A CN 106783546 A CN106783546 A CN 106783546A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
Abstract
The present invention provides a kind of low temperature deposition method of DARC films, it is adaptable to form darc layer on the BARC layer of wafer surface the top；One pecvd reactor is provided, reaction pedestal is provided with pecvd reactor, method includes：To the reactant being input into pecvd reactor for generating darc layer；Wafer carries out pre-deposition operation on reaction pedestal according to the first parameter preset；Wafer surface after pre-deposition operation is completed carries out main deposition operation according to the second parameter preset；Deposition operation is to form darc layer after the wafer surface for completing main deposition operation is carried out according to the 3rd parameter preset.Beneficial effects of the present invention：At low temperature in forming darc layer on the BARC layer of wafer surface, and the flatness of the darc layer film forming on fexible film BARC layer can be improved, significantly reduce the surface defect of darc layer film, be conducive to the later stage that PR layers is generated on the darc layer of wafer.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of low temperature deposition method of DARC films.
Background technology
Resist, because its refractive index and base material refractive index are mismatched, is produced in exposure process in substrate surface
Reflected light and incident light Xiang Hu Gan Wataru and form standing wave.The standing wave distribution of light intensity makes the light-sensitive compound (Photo inside resist
Active Compound, PAC) concentration be also distributed in standing wave so that resist edge contour has certain rising after development
Volt.
The method for suppressing standing wave effect has a lot, using ARC (Anti Reflective Coating, ARC)
It is that, at present using wide technique, Fig. 1 is the typical photolithographic structures for being used to eliminate standing wave effect in the prior art, using bottom
ARC 9 (Bottom Anti Reflective Coating, BARC) (Dielectric of+dielectric antireflective coatings 10
Anti Reflective Coating, DARC) combination regulation substrate optical parametric, reduce influence of the standing wave effect to photoetching, tool
Body, by plasma enhanced chemical vapor deposition method (Plasma Enhanced Chemical Vapor
Deposition, PECVD) generate darc layer, photoresist layer 11 in the upper surface of the BARC layer positioned at the wafer the superiors
(Photoresist, PR) is located at the upper surface of darc layer, the PR layers of selectable generation top anti-reflection coating 12 in 11 upper surfaces
(Top Anti Reflective Coating, TARC).
ARC using plasma enhancing chemical vapour deposition technique (Plasma Enhanced often are formed in wafer
Chemical Vapor Deposition, PECVD), its principle is：It is to make to constitute former containing film by microwave or radio frequency etc.
The gas of son, being partially formed plasma, and plasma chemistry activity is very strong, it is easy to reacts, is sunk on substrate
Product goes out desired film.A PECVD reactors 5 are generally used, at least four is set in PECVD reactors 5 and is reacted pedestal
6, it is respectively equipped with attemperating unit on each reaction pedestal 6, wafer 1 is placed on reaction pedestal 6, up and down the two of wafer 1
Side is respectively provided with Top electrode and bottom electrode, and the Top electrode and the bottom electrode connect high frequency power source and low frequency power source respectively
To form plasma in the PECVD reactors 5, using plasma discharge promote the decomposition of gas molecule, chemical combination, promote it is anti-
Active gene (secondary molecule) is answered to generate, while the secondary offer energy to diffuse to substrate surface, makes them be served as a contrast without high
Further film is diffuseed to form under the temperature conditionss of bottom along substrate surface.
Fig. 2 is the exemplary device for being used to eliminate standing wave effect in the prior art, the purpose is to the BARC in wafer the top
The upper surface of layer forms darc layer, and using annular streamline work pattern, wafer 1 is sent to by manipulator 2 from the first wait position 3
At import 4, enter in PECVD reactors 5 from the second input port 4, centrosymmetric four are provided with PECVD reactors 5 instead
Answer pedestal 6, the positions that wafer 1 sequentially passes through four reaction pedestals 6 are completed after the whole growth courses of film (darc layer) from the
It is sent at two delivery outlets 7, reaction time of the wafer 1 on each reaction pedestal 6 is the complete growth cycle of darc layer
A quarter, so as to effectively improve production efficiency, last wafer 1 is sent to the second wait position 8 by mechanical 2 hand.
But, BARC layer is flexible material, and deposition film easily forms distortion on flexible substrates, and mould is grown using flowing water type
Formula, during wafer is transmitted in the cavity of PECVD reactors, it is contemplated that the characteristic of BARC layer is, it is necessary to using relatively low
Temperature deposition darc layer defect is produced with the darc layer film for avoiding generation, prior art cannot solve the above problems.
The content of the invention
For problems of the prior art, film quality lower at low temperature can be improved the invention provides a kind of
The low temperature deposition method of DARC films.
A kind of low temperature deposition method of DARC films, it is adaptable to form darc layer on the BARC layer of wafer surface；There is provided
One pecvd reactor, is provided with reaction in the pecvd reactor
Pedestal, methods described includes：
Step S1, to being input into for generating the darc layer in the pecvd reactor
Reactant；
Step S2, the wafer carry out pre-deposition operation on the reaction pedestal according to the first parameter preset；
Step S3, the wafer surface after the pre-deposition operation is completed carry out main deposition according to the second parameter preset
Operation；
Step S4, carry out self-inspection deposition according to the 3rd parameter preset in the wafer surface for completing the main deposition operation
Grasp to form the darc layer.
Preferably, the reactant includes SiH4 gases, N2O gases and N2 gases.
Preferably, first parameter preset includes：
Temperature in the pecvd reactor is 210 DEG C；
Pressure in the pecvd reactor is 1.7Torr；
The time of the pre-deposition operation is 1S；
The performance number of high frequency power source is 594W；
The flow velocity of reactant SiH4 gases is 720sccm；
The flow velocity of reactant N2O gases is 400sccm；
The flow velocity of reactant N2 gases is 8800sccm.
Preferably, second parameter preset includes：
Temperature in the pecvd reactor is 210 DEG C；
Pressure in the pecvd reactor is 1.7Torr；
The time of the main deposition operation is 2.91S；
The performance number of high frequency power source is 594W；
The flow velocity of reactant SiH4 gases is 720sccm；
The flow velocity of reactant N2O gases is 400sccm；
The flow velocity of reactant N2 gases is 8800sccm.
Preferably, the 3rd parameter preset includes：
Temperature in the pecvd reactor is 210 DEG C；
Pressure in the pecvd reactor is 1Torr；
The time of the rear deposition operation is 3.5S；
The performance number of high frequency power source is 594W；
The flow velocity of reactant SiH4 gases is 720sccm；
The flow velocity of reactant N2O gases is 400sccm；
The flow velocity of reactant N2 gases is 8800sccm.
Preferably, the pecvd reactor is provided with the first input port and the first output
Mouthful, first input port is used to be input into the reactant, and first delivery outlet is used to exporting in DARC Film Growths
The accessory substance of generation.
Preferably, the pecvd reactor is provided with the second input port and the second output
Mouthful, second input port is used to be input into the wafer, and second delivery outlet is used to export the wafer.
A kind of low temperature deposition method of DARC films, it is adaptable to form darc layer on the BARC layer of wafer surface；Using
The low temperature deposition method of DARC films described above a, there is provided pecvd reactor, the grade from
A plurality of reaction pedestals are provided with daughter enhancing CVD reactor, methods described includes：
Step A1, by the wafer sequentially-fed to each described react pedestal and each it is described reaction pedestal on point
Above-mentioned deposition process is not carried out to form darc layer described in.
Preferably, the quantity of the reaction pedestal in the pecvd reactor is four
It is individual, and it is described four reaction pedestal be uniformly laid in around the center of the pecvd reactor,
And two-by-two it is described reaction pedestal between the center on the pecvd reactor be centrosymmetric
Distribution.
Preferably, sedimentation time of the wafer on each described reaction pedestal is identical.
The beneficial effects of the invention are as follows：The present invention sets suitable high frequency power source and ensures that chemical reaction is suitable under cryogenic
Profit is carried out, and to be eliminated and deposit the warping defects being also easy to produce in flexible substrate；Rational pre-deposition behaviour is set before and after main deposition operation
Make and rear deposition operation, pre-deposition operation improves film nucleation density, rear deposition operation reduces the influence of cavity residual gas, so that
Wafer is solved in transmitting procedure because reacting insufficient, the problem of excessive surface defect is produced, at low temperature in wafer surface
High-flatness, the darc layer of low-defect-density are formed on BARC layer, is conducive to the later stage that PR layers is generated on the darc layer of wafer.
Brief description of the drawings
Fig. 1 is the typical photolithographic structures schematic diagram for eliminating standing wave effect in the prior art；
Fig. 2 is the exemplary device schematic diagram for eliminating standing wave effect in the prior art；
Fig. 3 be a preferred embodiment of the present invention in, the typical photolithographic structures schematic diagram for eliminating standing wave effect；
Fig. 4 be a preferred embodiment of the present invention in, the exemplary device schematic diagram for eliminating standing wave effect；
Fig. 5 be a preferred embodiment of the present invention in, the flow chart of the low temperature deposition method of DARC films.
Specific embodiment
It should be noted that in the case where not conflicting, following technical proposals can be mutually combined between technical characteristic.
Specific embodiment of the invention is further described below in conjunction with the accompanying drawings：
As in Figure 3-5, a kind of low temperature deposition method of DARC films, it is adaptable in the BARC of the surface the top of wafer 1
Darc layer 10 is formed on layer 9, other film layers are may also set up between the surface of wafer 1 and BARC layer 9；One plasma enhancing is provided
Reaction pedestal 6, above-mentioned side are provided with CVD reactor 5, above-mentioned pecvd reactor 5
Method includes：
Step S1, to being input into for generating above-mentioned darc layer in above-mentioned pecvd reactor 5
10 reactant；
Step S2, above-mentioned wafer 1 carry out pre-deposition operation on above-mentioned reaction pedestal 6 according to the first parameter preset；
Step S3, that the surface of above-mentioned wafer 1 after the operation of above-mentioned pre-deposition is completed according to the second parameter preset lead is heavy
Product operation；
Step S4, the surface of above-mentioned wafer 1 after the above-mentioned main deposition operation of completion sink after being carried out according to the 3rd parameter preset
Product operation, to form above-mentioned darc layer 10；
By above-mentioned pre-deposition operation, above-mentioned main deposition operation and it is above-mentioned after deposition operation after the surface of above-mentioned wafer 1
BARC layer 9 on formed an above-mentioned darc layer 10.
In the present embodiment, rational pre-deposition operation and rear deposition operation, pre-deposition behaviour are set before and after main deposition operation
Make to improve film nucleation density, the reduction cavity residual gas influence of rear deposition operation, thus solve wafer 1 in transmitting procedure because
Reaction is insufficient, produces the problem of excessive surface defect, the upper surface of the BARC layer 9 of the top of wafer 1 formed high-flatness,
The darc layer 10 of low-defect-density.
Further, the influence that darc layer 10 can be separately as ARC reduction standing waves to be subsequently formed PR layers 11；Darc layer
10 can combine the influence for reducing standing wave to be subsequently formed PR layers 11 with BARC layer 9；The technique framework of technical solution of the present invention can
Migrate to the growth of low temperature oxide (low temperature oxidation, LTO).
In preferred embodiments of the present invention, above-mentioned reactant includes SiH4 gases, N2O gases and N2 gases.
In the present embodiment, the reaction of SiH4 gases, N2O gases and N2 gases in PECVD reactors is such as following public affairs
Formula：
SiH4+N2O+N2→SiXOYNZ+ byproducts (accessory substance)； (1)
To SiH4 gases, N2O gases and N2 gases is input into pecvd reactor 5, pass through
The upper surface of the BARC layer 9 after pecvd process in the top of wafer 1 generates DARC films, and the composition of above-mentioned DARC films is
Si in formulaXOYNZ, the accessory substance that generates during the course of the reaction needed from pecvd reactor 5
Middle discharge.
In preferred embodiments of the present invention, above-mentioned first parameter preset includes：Above-mentioned PECVD sinks
Temperature in product reactor 5 is 210 DEG C；Pressure in above-mentioned pecvd reactor 5 is
1.7Torr；The time of above-mentioned pre-deposition operation is 1S；The performance number of high frequency power source is 594W；The flow velocity of above-mentioned SiH4 gases
It is 720sccm；The flow velocity of above-mentioned N2O gases is 400sccm；The flow velocity of above-mentioned N2 gases is 8800sccm.
In in this implementation, suitable high frequency power source is set and ensures that chemical reaction is smoothed out under cryogenic, eliminate
The warping defects being also easy to produce are deposited in flexible substrate.
In preferred embodiments of the present invention, above-mentioned second parameter preset includes：Above-mentioned PECVD sinks
Temperature in product reactor 5 is 210 DEG C；Pressure in above-mentioned pecvd reactor 5 is
1.7Torr；The time of above-mentioned pre-deposition operation is .91S；The performance number of high frequency power source is 594W；The stream of above-mentioned SiH4 gases
Speed is 720sccm；The flow velocity of above-mentioned N2O gases is 400sccm；The flow velocity of above-mentioned N2 gases is 8800sccm.
In in this implementation, suitable high frequency power source is set and ensures that chemical reaction is smoothed out under cryogenic, eliminate
The warping defects being also easy to produce are deposited in flexible substrate.
In preferred embodiments of the present invention, above-mentioned 3rd parameter preset includes：Above-mentioned PECVD sinks
Temperature in product reactor 5 is 210 DEG C；Pressure in above-mentioned pecvd reactor 5 is 1Torr；
The time of above-mentioned pre-deposition operation is 3.5S；The performance number of high frequency power source is 594W；The flow velocity of above-mentioned SiH4 gases is
720sccm；The flow velocity of above-mentioned N2O gases is 400sccm；The flow velocity of above-mentioned N2 gases is 8800sccm.
The middle suitable high frequency power source of setting ensures that chemical reaction is smoothed out under cryogenic in this implementation, eliminates soft
The warping defects being also easy to produce are deposited on property substrate.
In preferred embodiments of the present invention, it is defeated that above-mentioned pecvd reactor 5 is provided with first
Entrance (not shown) and the first delivery outlet (not shown), above-mentioned first input port are used to be input into above-mentioned reactant, on
The first delivery outlet is stated for exporting the accessory substance produced in DARC Film Growths.
In preferred embodiments of the present invention, it is defeated that above-mentioned pecvd reactor 5 is provided with second
The delivery outlet 7 of entrance 4 and second, above-mentioned second input port 4 is used to be input into above-mentioned wafer 1, and above-mentioned second delivery outlet 7 is used to export
State wafer 1.
A kind of low temperature deposition method of DARC films, it is adaptable to darc layer 10 is formed on the BARC layer 9 on the surface of wafer 1；
Using the low temperature deposition method of the above-mentioned DARC films of such as claim 1, there is provided a plasma enhanced chemical vapor deposition is anti-
Answer in device 5, above-mentioned pecvd reactor 5 and be provided with a plurality of above-mentioned reaction pedestals 6, above method bag
Include：
Step A1, to being input into for generating above-mentioned darc layer in above-mentioned pecvd reactor 5
10 reactant；
Step A2, by the sequentially-fed of above-mentioned wafer 1 to each above-mentioned reaction pedestal 6 and in each above-mentioned reaction pedestal 6
It is upper to carry out deposition operation respectively, to form an above-mentioned darc layer 10；
Above-mentioned deposition operation includes：
The above-mentioned pre-deposition carried out according to above-mentioned first parameter preset is operated；
According to the above-mentioned main deposition operation that above-mentioned second parameter preset is carried out；
According to the above-mentioned rear deposition operation that above-mentioned 3rd parameter preset is carried out.
In preferred embodiments of the present invention, the above-mentioned reaction in above-mentioned pecvd reactor 5
The quantity of pedestal 6 is four, and aforementioned four reaction pedestal 6 to be uniformly laid in above-mentioned plasma enhanced chemical vapor deposition anti-
Answer around the center of device 5, and two-by-two between above-mentioned reaction pedestal 6 on above-mentioned pecvd reactor
5 center is centrosymmetric distribution.
In the present embodiment, after the feeding of wafer 1 pecvd reactor 5 by mechanical arm 2 by crystalline substance
Unit is sent at the first wait position 3, and it is nearest to be delivered to distance the second input port 4 through the second input port 4 by the first wait position 3
Deposition operation is carried out on reaction pedestal 6, after the completion of the deposition operation of first time, wafer 1 is sequentially sent to next reaction
Pedestal 6 proceeds above-mentioned deposition operation and a film generation is completed after sequentially passing through all reaction pedestals 6, passes through afterwards
Second delivery outlet 7 is exported to second and waited at position 8, then wafer is sent out into plasma enhanced chemical vapor deposition by mechanical arm 2
Reactor 5.
Further, the time of above-mentioned deposition operation of the wafer on each reaction pedestal 6 is identical.
Reactant feeding pecvd reactor 5 is completed in the growth cycle of whole film
Interior, the secondary molecule of reactant generation and accessory substance, the diffusion of secondary molecule, secondary Molecular Adsorption are on substrate, secondary molecule is in lining
Basal surface diffusion, secondary molecule and substrate surface reactions, secondary molecule substrate surface generate continuous film, accessory substance be desorbed,
The operation that accessory substance is removed.
For a person skilled in the art, after reading described above, various changes and modifications undoubtedly will be evident that.
Therefore, appending claims should regard the whole variations and modifications for covering true intention of the invention and scope as.In power
Any and all scope and content of equal value, are all considered as still belonging to the intent and scope of the invention in the range of sharp claim.
Claims (10)
1. a kind of low temperature deposition method of DARC films, it is adaptable to form darc layer on the BARC layer of wafer surface the top；
It is characterized in that, there is provided first-class gas ions strengthen CVD reactor, the plasma enhanced chemical vapor deposition
Reaction pedestal is provided with reactor, the reaction pedestal is used to carry the wafer, and methods described includes：
Step S1, to the reaction being input into the pecvd reactor for generating the darc layer
Thing；
Step S2, the wafer carry out pre-deposition operation on the reaction pedestal according to the first parameter preset；
Step S3, the wafer surface after the pre-deposition operation is completed carry out main deposition behaviour according to the second parameter preset
Make；
Step S4, after the wafer surface for completing the main deposition operation is carried out according to the 3rd parameter preset deposition operation with
Form the darc layer.
2. low temperature deposition method according to claim 1, it is characterised in that the reactant includes SiH4 gases, N2O gas
Body and N2 gases.
3. low temperature deposition method according to claim 1, it is characterised in that first parameter preset includes：
Temperature in the pecvd reactor is 210 DEG C；
Pressure in the pecvd reactor is 1.7Torr；
The time of the pre-deposition operation is 1S；
The performance number of high frequency power source is 594W；
The flow velocity of reactant SiH4 gases is 720sccm；
The flow velocity of reactant N2O gases is 400sccm；
The flow velocity of reactant N2 gases is 8800sccm.
4. low temperature deposition method according to claim 1, it is characterised in that second parameter preset includes：
Temperature in the pecvd reactor is 210 DEG C；
Pressure in the pecvd reactor is 1.7Torr；
The time of the main deposition operation is 2.91S；
The performance number of high frequency power source is 594W；
The flow velocity of reactant SiH4 gases is 720sccm；
The flow velocity of reactant N2O gases is 400sccm；
The flow velocity of reactant N2 gases is 8800sccm.
5. low temperature deposition method according to claim 1, it is characterised in that the 3rd parameter preset includes：
Temperature in the pecvd reactor is 210 DEG C；
Pressure in the pecvd reactor is 1Torr；
The time of the rear deposition operation is 3.5S；
The performance number of high frequency power source is 594W；
The flow velocity of reactant SiH4 gases is 720sccm；
The flow velocity of reactant N2O gases is 400sccm；
The flow velocity of reactant N2 gases is 8800sccm.
6. low temperature deposition method according to claim 1, it is characterised in that the plasma enhanced chemical vapor deposition
Reactor is provided with the first input port and the first delivery outlet, and first input port is used to be input into the reactant, described first
Delivery outlet is used to export the accessory substance produced in DARC Film Growths.
7. low temperature deposition method according to claim 1, it is characterised in that the plasma enhanced chemical vapor deposition
Reactor is provided with the second input port and the second delivery outlet, and second input port is used to be input into the wafer, and described second is defeated
Export for exporting the wafer.
8. a kind of low temperature deposition method of DARC films, it is adaptable to form darc layer on the BARC layer of wafer surface；Its feature
It is, there is provided a pecvd reactor, the pecvd reactor
A plurality of reaction pedestals are inside provided with, methods described includes：
Step A1, by the wafer sequentially-fed to each described react pedestal and each it is described reaction pedestal on enter respectively
Deposition process described in the row claim 1-7 is forming the darc layer.
9. low temperature deposition method according to claim 8, it is characterised in that the plasma enhanced chemical vapor deposition
The quantity of the reaction pedestal in reactor is four, and four reactions pedestal is uniformly laid in the plasma and increases
Around the center of extensive chemical gas-phase deposition reactor, and two-by-two between the reaction pedestal on the plasma enhanced chemical
The center of gas-phase deposition reactor is centrosymmetric distribution.
10. low temperature deposition method according to claim 9, it is characterised in that the wafer is in each reaction pedestal
On sedimentation time it is identical.
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| CN201611219771.5A CN106783546A (en) | 2016-12-26 | 2016-12-26 | A kind of low temperature deposition method of DARC films |
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|---|---|---|---|---|
| CN1240841A (en) * | 1998-06-15 | 2000-01-12 | 西门子公司 | High density plasma CVD process for making dielectric anti-reflective coatings |
| CN101671817A (en) * | 2008-09-09 | 2010-03-17 | 中芯国际集成电路制造(北京)有限公司 | Plasma enhanced chemical vapor deposition treatment method |
| CN102201365A (en) * | 2010-03-22 | 2011-09-28 | 中芯国际集成电路制造(上海)有限公司 | Method for producing semiconductor device |
| CN102820219A (en) * | 2012-07-03 | 2012-12-12 | 上海华力微电子有限公司 | Forming method of low-temperature silica film |
-
2016
- 2016-12-26 CN CN201611219771.5A patent/CN106783546A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1240841A (en) * | 1998-06-15 | 2000-01-12 | 西门子公司 | High density plasma CVD process for making dielectric anti-reflective coatings |
| CN101671817A (en) * | 2008-09-09 | 2010-03-17 | 中芯国际集成电路制造(北京)有限公司 | Plasma enhanced chemical vapor deposition treatment method |
| CN102201365A (en) * | 2010-03-22 | 2011-09-28 | 中芯国际集成电路制造(上海)有限公司 | Method for producing semiconductor device |
| CN102820219A (en) * | 2012-07-03 | 2012-12-12 | 上海华力微电子有限公司 | Forming method of low-temperature silica film |
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Application publication date: 20170531 |