CN106774616B - 一种高阶温度补偿的低温漂基准源电路 - Google Patents
一种高阶温度补偿的低温漂基准源电路 Download PDFInfo
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- CN106774616B CN106774616B CN201611196589.2A CN201611196589A CN106774616B CN 106774616 B CN106774616 B CN 106774616B CN 201611196589 A CN201611196589 A CN 201611196589A CN 106774616 B CN106774616 B CN 106774616B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/267—Current mirrors using both bipolar and field-effect technology
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CN201611196589.2A CN106774616B (zh) | 2016-12-22 | 2016-12-22 | 一种高阶温度补偿的低温漂基准源电路 |
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CN106774616A CN106774616A (zh) | 2017-05-31 |
CN106774616B true CN106774616B (zh) | 2017-11-24 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107562116A (zh) * | 2017-09-01 | 2018-01-09 | 福建省福芯电子科技有限公司 | 一种电源电压产生电路 |
CN107861557B (zh) * | 2017-11-01 | 2019-11-12 | 重庆邮电大学 | 一种mos管实现二极管的高阶温度补偿带隙基准电路 |
CN108052151B (zh) * | 2017-12-14 | 2020-10-27 | 上海艾为电子技术股份有限公司 | 一种无嵌位运放的带隙基准电压源 |
CN108762366A (zh) * | 2018-06-02 | 2018-11-06 | 丹阳恒芯电子有限公司 | 一种带隙基准电路 |
CN108536210B (zh) * | 2018-07-10 | 2023-04-28 | 成都信息工程大学 | 一种平滑温度补偿带隙基准源电路 |
CN111414034B (zh) * | 2020-05-29 | 2021-10-08 | 苏州大学 | 适用于宽温度范围的低温度系数带隙基准源 |
CN111930169B (zh) * | 2020-07-27 | 2022-02-11 | 重庆邮电大学 | 一种负反馈分段曲率补偿带隙基准电路 |
CN115951751B (zh) * | 2023-03-10 | 2023-06-16 | 核芯互联科技(青岛)有限公司 | 一种采用分段温漂曲率补偿的低噪声基准源 |
Citations (6)
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CN101030085A (zh) * | 2007-01-16 | 2007-09-05 | 西安交通大学 | 一种参考电压模块及其温度补偿方法 |
CN101101492A (zh) * | 2007-07-30 | 2008-01-09 | 电子科技大学 | 一种分段线性补偿的cmos带隙基准电压源 |
CN102012715A (zh) * | 2010-11-24 | 2011-04-13 | 天津泛海科技有限公司 | 高阶曲率补偿的带隙基准电压源 |
JP2014048764A (ja) * | 2012-08-30 | 2014-03-17 | Hitachi Ltd | 電流源回路 |
CN103869868A (zh) * | 2014-03-24 | 2014-06-18 | 重庆邮电大学 | 一种带温度补偿的带隙基准参考电路 |
CN205405321U (zh) * | 2016-03-02 | 2016-07-27 | 湘潭大学 | 曲率补偿低温漂带隙基准电压源 |
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- 2016-12-22 CN CN201611196589.2A patent/CN106774616B/zh active Active
Patent Citations (6)
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CN101030085A (zh) * | 2007-01-16 | 2007-09-05 | 西安交通大学 | 一种参考电压模块及其温度补偿方法 |
CN101101492A (zh) * | 2007-07-30 | 2008-01-09 | 电子科技大学 | 一种分段线性补偿的cmos带隙基准电压源 |
CN102012715A (zh) * | 2010-11-24 | 2011-04-13 | 天津泛海科技有限公司 | 高阶曲率补偿的带隙基准电压源 |
JP2014048764A (ja) * | 2012-08-30 | 2014-03-17 | Hitachi Ltd | 電流源回路 |
CN103869868A (zh) * | 2014-03-24 | 2014-06-18 | 重庆邮电大学 | 一种带温度补偿的带隙基准参考电路 |
CN205405321U (zh) * | 2016-03-02 | 2016-07-27 | 湘潭大学 | 曲率补偿低温漂带隙基准电压源 |
Non-Patent Citations (2)
Title |
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一种高精度电压基准源设计方法;程亮;《山西电子技术》;20141231(第2期);第13-14,31页 * |
线性补偿型带隙基准电压源设计;曾健平 等;《宇航计测技术》;20050831;第25卷(第4期);第49-53页 * |
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Address after: 610000 Sichuan city of Chengdu province high tech Zone (West) Tianchen Road No. 88 4 unit three building 4 layer Applicant after: ZHISENSOR TECHNOLOGIES Inc. Address before: 610000 Sichuan city of Chengdu province high tech Zone Xinya Street No. 4 of No. 2 layer 3 Applicant before: SICHUAN NAJIE MICROELECTRONIC TECHNOLOGY CO.,LTD. |
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Effective date of registration: 20221028 Address after: Room A1186, Building 3, No. 1150 Lanfeng Road, Fengxian District, Shanghai, 200000 Patentee after: Shanghai Qualcomm Sense Microelectronics Co.,Ltd. Address before: Floor 4, unit 3, building 4, No.88, Tianchen Road, high tech Zone (West District), Chengdu, Sichuan 610000 Patentee before: ZHISENSOR TECHNOLOGIES Inc. |
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Effective date of registration: 20221223 Address after: Floor 4, unit 3, building 4, No.88, Tianchen Road, high tech Zone (West District), Chengdu, Sichuan 610000 Patentee after: ZHISENSOR TECHNOLOGIES Inc. Address before: Room A1186, Building 3, No. 1150 Lanfeng Road, Fengxian District, Shanghai, 200000 Patentee before: Shanghai Qualcomm Sense Microelectronics Co.,Ltd. |