CN106770539B - The manufacturing method of gas sensor based on carbon nano tube growth technology - Google Patents
The manufacturing method of gas sensor based on carbon nano tube growth technology Download PDFInfo
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- CN106770539B CN106770539B CN201611018959.3A CN201611018959A CN106770539B CN 106770539 B CN106770539 B CN 106770539B CN 201611018959 A CN201611018959 A CN 201611018959A CN 106770539 B CN106770539 B CN 106770539B
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- microelectrode array
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
- G01N27/308—Electrodes, e.g. test electrodes; Half-cells at least partially made of carbon
Abstract
The invention discloses a kind of manufacturing method of gas sensor based on carbon nano tube growth technology, the gas sensor includes insulating body, insulating layer, yin-yang microelectrode array, anodic-cathodic welding section and several carbon nanotubes；Insulating layer is arranged on insulating body, and on the insulating layer, yin-yang microelectrode array is conductively connected with anodic-cathodic welding section respectively, is arranged vertically several carbon nanotubes on yin-yang microelectrode array for yin-yang microelectrode array and the setting of anodic-cathodic welding section；The yin-yang microelectrode array of the sensor and anodic-cathodic welding section are formed by microlithography DOPOS doped polycrystalline silicon, and will be used to grow the metal jet of carbon nanotube to exposed yin-yang microelectrode array using cathode vacuum spray technique, the carbon nanotube that then growth of vertical arranges on yin-yang microelectrode array using chemical vapors deposition technique；The spacing and shape that can be very good control microelectrode array, make its regular arrangement, improve the precision of gas sensor.
Description
Technical field
The present invention relates to the manufacturing methods of a kind of gas sensor more particularly to a kind of based on carbon nano tube growth technology
The manufacturing method of gas sensor.
Background technique
Gas sensor is believed for monitoring ingredient and behavioral characteristics of gas etc., and by the ingredient of gas and behavioral characteristics etc.
Breath is converted into electric signal.Gas sensor generally comprises matrix, insulating layer and microelectrode array.Gas to be monitored is not contacted
When, the electric field strength of gas sensor is less than the breakdown strength of air, when the charged particle in gas to be monitored is transported by air-flow
The modes such as dynamic and diffusion motion reach in microelectrode array response range, and positively charged and negative electrical charge particle is respectively by negative electrode
It is captured with the electric field of positive electrode adjacent domain, and to drift electrode, forms current signal output.
With the development of nanotechnology, nano material is successfully applied in gas sensor, and layer of nanomaterial is coating
It is placed on microelectrode array surface, since the electric-field enhancing of layer of nanomaterial acts on, so that under identical voltage, microelectrode array
The electric field strength of adjacent domain greatly enhances, therefore charging particle movement speed is accelerated, and current density increases, so as to improve
Signal output intensity.On the other hand, the drift of charged particle can also generate the processes such as ionization by collision in the electric field, to form snow
Gain is collapsed, further increases signal output intensity, and the intensity of gain, therefore nanometer material can be improved in the enhancing of electric field strength
The use of material is conducive to improve signal strength.
A kind of mini-sensor for human breathing is described in CN 100493452C, as shown in Figure 1, including insulating body, exhausted
Edge layer and microelectrode array, monodimension nanometer material layer is covered on microelectrode array, which is multi-wall carbon nano-tube
Pipe.Test result shows that the current signal detected is remarkably reinforced than being not covered with the microelectrode array of monodimension nanometer material layer.
Ashish Modi etc. is delivered on Nature Journal (Nature/Vol 424/10July 2003, the 171-174 pages)
Article " Miniaturized gas ionization sensors using carbon nanotubes " in describe one
Miniaturization gas ionization sensor of the kind based on carbon nanotube technology.As shown in Fig. 2, including insulating body, insulating layer, glass
The carbon nanotube and metal plate of piece separating layer, the vertical arrangement grown using chemical vapors deposition technique, wherein carbon nanotube
It is anode, metal plate is cathode.Experiments have shown that reducing the distance between anodic-cathodic, electric field strength needed for gas breakdown is big
Amplitude reduction.
Current existing technology cannot solve to control the spacing of microelectrode array and shape simultaneously and control carbon nanotube
The problem of growth is directed toward, to reach the effect for improving detection accuracy and reducing power consumption simultaneously.
Summary of the invention
Goal of the invention: in view of the above problems, the present invention proposes that a kind of detection accuracy is higher, power consumption is lower based on carbon nanometer
The manufacturing method of the gas sensor of pipe growing technology.
Technical solution: to achieve the purpose of the present invention, the technical scheme adopted by the invention is that:
Manufacture the gas sensor based on carbon nano tube growth technology, comprising the following steps:
(1) prepare an insulating body, the depositing insulating layer on insulating body；
(2) depositing doped polysilicon on the insulating layer, DOPOS doped polycrystalline silicon described in microlithography, forms yin-yang microelectrode array
With anodic-cathodic welding section, negative microelectrode array and negative electrode welding section are conductively connected, and positive microelectrode array and positive electrode weld
Area is conductively connected；
(3) depositing insulating layer, microlithography insulating layer on the doped poly silicon again, make yin-yang microelectrode array and yin-yang electricity
Pole welding section is completely exposed；
(4) it will be used to grow the metal jet of carbon nanotube to exposed yin-yang microelectrode using cathode vacuum spray technique
On array；
(5) carbon nanotube that direct growth of vertical arranges on yin-yang microelectrode array using chemical vapors deposition technique,
The direction of micro-nano technology technical controlling carbon nanotube is utilized simultaneously.
The utility model has the advantages that being somebody's turn to do the gas sensor based on carbon nano tube growth technology, directly growth carbon is received on the doped poly silicon
Mitron reduces the distance between anodic-cathodic, reduces power consumption；Carbon nanotube is grown using chemical vapors deposition technique, together
The direction of Shi Liyong micro-nano technology technical controlling carbon nano tube growth can be very good the spacing and shape of control microelectrode array
Shape makes its regular arrangement, improves the precision of gas sensor.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of mini-sensor for human breathing；
Fig. 2 is the structural schematic diagram of the miniaturization gas ionization sensor based on carbon nanotube technology；
Fig. 3 is structural schematic diagram of the invention.
Specific embodiment
Further description of the technical solution of the present invention with reference to the accompanying drawings and examples.
Gas sensor of the present invention based on carbon nano tube growth technology, as shown in figure 3, include insulating body 1,
Insulating body 1 can be silicon wafer, can be glass, be also possible to other insulating materials.Insulating layer 2 is set on insulating body 1, absolutely
Edge layer material can be silica, silicon nitride or other insulating materials.On insulating layer 2 be arranged yin, yang microelectrode array and yin,
Positive electrode welding section, negative electrode array 6 and negative electrode welding section 4 are conductively connected, and positive electrode array 5 and positive electrode welding section 3 are led
Electrical connection.Several carbon nanotubes 7 are arranged vertically on each microelectrode array, if the dry carbon nanometer on each microelectrode array
It is spaced apart from each other between pipe and by air insulated.
When manufacturing the gas sensor, first prepare insulating body 1, depositing insulating layer on insulating body 1 sinks on insulating layer
Product DOPOS doped polycrystalline silicon, impurity can be phosphorus, and DOPOS doped polycrystalline silicon has better electric conductivity.Microlithography DOPOS doped polycrystalline silicon
Yin-yang microelectrode array and anodic-cathodic welding section are formed, negative electrode array 6 and negative electrode welding section 4 are conductively connected, positive electrode
Array 5 and positive electrode welding section 3 are conductively connected.Depositing insulating layer, microlithography insulating layer make yin again on the doped poly silicon
Positive microelectrode array and yin-yang welding section expose outside completely to be come.Carbon nanotube will be used to grow using cathode vacuum spray technique
It is then raw on yin-yang microelectrode array using chemical vapors deposition technique on metal jet to exposed yin-yang microelectrode array
The carbon nanotube 7 of long vertical arrangement, while being directed toward using the growth that micro-nano technology technology accurately controls carbon nanotube 7, it can be very
The spacing and shape of good control microelectrode array, so that by the regular arrangement of microelectrode that carbon nanotube is formed, and then make
It obtains and relevant design requirement is met by the microelectrode that carbon nanotube is formed, improve the precision of gas sensor.
Claims (2)
1. a kind of manufacturing method of the gas sensor based on carbon nano tube growth technology, it is characterised in that: the following steps are included:
(1) prepare an insulating body, the depositing insulating layer on insulating body；
(2) depositing doped polysilicon on the insulating layer, DOPOS doped polycrystalline silicon described in microlithography, formed yin, yang microelectrode array and
Yin, yang electrode welding zone, yin, yang microelectrode array are conductively connected with yin, yang electrode welding zone respectively；
(3) depositing insulating layer, microlithography insulating layer make yin, yang microelectrode array and yin, yang electrode on the doped poly silicon again
Welding section is completely exposed；
(4) it will be used to grow the metal jet of carbon nanotube to exposed yin, yang microelectrode array；
(5) carbon nanotube that growth of vertical arranges on yin, yang microelectrode array using chemical vapors deposition technique, utilizes simultaneously
The spacing and shape of carbon nanotube on micro-nano technology technical controlling yin, yang microelectrode array.
2. the manufacturing method of the gas sensor according to claim 1 based on carbon nano tube growth technology, feature exist
In: be in the step (4) will be used to grow using cathode vacuum spray technique the metal jet of carbon nanotube to exposed yin,
On positive microelectrode array.
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| CN108128750B (en) * | 2017-12-14 | 2020-12-11 | 上海交通大学 | Manufacturing method of ionization type sensor |
| CN113533454B (en) * | 2020-07-21 | 2024-03-19 | 艾感科技(广东)有限公司 | Three-dimensional nanotube-based gas sensor, manufacturing method and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63195557A (en) * | 1987-02-09 | 1988-08-12 | Nippon Koden Corp | Field effect transistor for ion sensor |
| CN1792326A (en) * | 2005-12-29 | 2006-06-28 | 上海交通大学 | Mini-sensor for human breathing |
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2016
- 2016-11-18 CN CN201611018959.3A patent/CN106770539B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63195557A (en) * | 1987-02-09 | 1988-08-12 | Nippon Koden Corp | Field effect transistor for ion sensor |
| CN1792326A (en) * | 2005-12-29 | 2006-06-28 | 上海交通大学 | Mini-sensor for human breathing |
Non-Patent Citations (1)
| Title |
|---|
| Miniaturized gas ionization sensors using carbon nanotubes;Ashish Modi et al.;《Nature》;20030710;第424卷;第171页及图1 |
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