CN106768463A - A kind of luminous diode temperature alarm based on phase-change material - Google Patents
A kind of luminous diode temperature alarm based on phase-change material Download PDFInfo
- Publication number
- CN106768463A CN106768463A CN201611191931.XA CN201611191931A CN106768463A CN 106768463 A CN106768463 A CN 106768463A CN 201611191931 A CN201611191931 A CN 201611191931A CN 106768463 A CN106768463 A CN 106768463A
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- China
- Prior art keywords
- temperature
- phase
- chip
- led
- alarm
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K11/00—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00
- G01K11/06—Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 using melting, freezing, or softening
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/02—Means for indicating or recording specially adapted for thermometers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
Abstract
The present invention relates to a kind of luminous diode temperature alarm based on phase-change material.In the encapsulation process of conventional light emitting diodes, phase-change material is added as a part for encapsulation, from epoxy resin or silica gel as sealant, obtain the encapsulating structure of phase-change material and LED chip directly contact, the heating of LED chip or the temperature of external environment condition are raised, so that partial phase change material reaches fusing point and undergoes phase transition, the thermal stress of generation is drastically expanded during phase transformation, chip is caused LED open circuits with the connection line skew of encapsulating structure, reached the electric current in uniform temperature and disconnected and the luminous warning effect for stopping.The decline or the decline of ambient temperature of chip temperature after LED open circuits so that chip is contacted with chip Top electrode again with the connecting line of encapsulating structure, LED conductings, so that alarm is eliminated automatically.Such alarm is with low cost, simple structure, is capable of achieving the accurate alarm to LED chip or a certain temperature spot or temperature section of external environment condition.
Description
Technical field
The present invention relates to the technical field of light emitting diode and alarm, and in particular to a kind of based on phase-change material luminous two
Pole pipe temperature alarm.
Background technology
At present, the application of LED is more and more extensive, and the LED lamp for daily indoor and outdoor lighting is also just more and more general
And.Current LED illumination increasingly develops towards high-power direction, and the high heat that great power LED brings is puzzlement LED popularizations
One key factor.If LED works at high temperature for a long time, its life-span can greatly shorten, and produce dead lamp phenomenon, cause light fixture
Scrap.If can automatically send alarm signal in overtemperature, maintenance personal is reminded to take corresponding maintenance operation or energy in time
Power-off prevents overheat, can extend the service life of LED modules.
Phase-change material phase-change material PCMs (Phase Change Materials) refers in certain narrow clear and definite temperature
Scope, i.e., can change physical state in usually said phase transformation range, such as be changed into solid for liquid or from liquid from Solid State Transformation
The material [1] of state.In phase transition process, Volume Changes very little, heat content is high, therefore absorbs or release from surrounding environment in latent heat form
Amplification quantity heat, the uptake or burst size of heat is more much greater than general heating and cooling procedure (sensible heat form), and now
The temperature of PCMs keeps constant or constant.
Report is yet there are no using application of the performance of phase-change material in the overtemperature protection and temperature alarm of light emitting diode
Road.
The content of the invention
In view of the shortcomings of the prior art, the present invention proposes a kind of luminous diode temperature report based on phase-change material
Alert device.In the encapsulation process of conventional light emitting diodes, a part of the phase-change material as encapsulation is added, when phase-change material reaches
Undergone phase transition to fusing point so that in uniform temperature, electric current disconnects and the luminous warning effect for stopping.The alarm is with low cost,
Simple structure, is capable of achieving the accurate alarm to LED chip or a certain temperature spot or temperature section of external environment condition.
A kind of luminous diode temperature alarm based on phase-change material of the present invention, specially:In Conventional luminescent
In the encapsulation process of diode, a part of the phase-change material as encapsulation is added, and from epoxy resin or silica gel as close
Envelope agent, obtains the encapsulating structure of phase-change material and LED chip directly contact, the heating of LED chip or the temperature liter of external environment condition
It is high so that partial phase change material reaches fusing point and undergoes phase transition, and the thermal stress of generation is drastically expanded during phase transformation, make chip with encapsulation
The connection line skew of structure causes LED open circuits, has reached the electric current in uniform temperature and has disconnected and the luminous warning effect for stopping.
The decline or the decline of ambient temperature of chip temperature after LED open circuits so that the connecting line of chip and encapsulating structure again with
Chip Top electrode is contacted, LED conductings, so that alarm is eliminated automatically.
The phase-change material is electric insulation, and, at 30~200 DEG C, thermal expansion system is big during phase transformation for solid-liquid phase change fusing point,
Transparent material is almost under liquid.
Alarm temperature can be adjusted by selecting the phase-change material of different melting points, and such as phase-change material fusing point is T0, observes and predicts police
Temperature is general between T0-10 DEG C to T0+5 DEG C.
Alarm signal can be the mutation of current signal, and after such as reaching alarm temperature, electric current is changed into 0;Alarm signal also may be used
To be the mutation of optical signal, after such as reaching alarm temperature, the luminous stopping of LED;Alarm signal can also connect LED, to LED
Electricity and optical signal sensing external devices signal.
Chip and the conductor material that the connecting line of encapsulating structure can be the LED encapsulation such as gold thread, aluminum steel, copper cash.
The positive and negative electrode of LED chip and connecting wire can be welded together, or and core after ball bonding or pressure welding
Electrode on piece is simply contacted, as long as partial phase change material undergoes phase transition, the stress of thermal expansion make enough connecting wire with
The electrode offset of LED chip.
LED chip open circuit after chip temperature decline, or ambient temperature decline so that temperature become material shrinkage and combination
Gravity factor, chip can decline in 1~10 DEG C again with the connecting line of encapsulating structure in LED chip temperature or ambient temperature
Connection, recovers the energization of LED chip.
Alarm of the present invention is with low cost, simple structure, is capable of achieving to LED chip or a certain temperature of external environment condition
The accurate alarm of degree point or temperature section.
Brief description of the drawings
Fig. 1-3 is gold ball bonding termination process.
Fig. 1:A wherein electrode first is welded on support pin, is cut after pulling out certain length gold thread, and another electrode is normal
Welding
Fig. 2:Ball is burnt to gold thread sparking
Fig. 3:Gold goal moves on to chip electrode
Fig. 4 is to cover LED chip with atoleine
Fig. 5 is the LED samples that solid paraffin is covered on LED chip
Fig. 6 is the LED samples injected after epoxy resin cure
Fig. 7 is interior change when phase-change material undergoes phase transition
Fig. 8 is the junction temperature-time graph of sample under 300mA electric currents.
Specific embodiment
Embodiments of the present invention are illustrated below in conjunction with accompanying drawing.
1. as Figure 1-3, during gold ball bonding, wherein an electrode first is welded on support pin, certain distance is pulled
Gold thread is simultaneously cut, and end is cut to gold thread and strikes sparks burning ball manually once, and the gold goal that will be fired into is moved on the solder joint of chip, another
Pole normal weld.
2. use paraffin as phase-change material, such as Fig. 4-6, fixed movable gold thread using stationary fixture, heating paraffin into
Chip is instilled with slower speed by with punch die after liquid, a hemispherical solid is eventually formed.Load onto mould bar and instill ring
Oxygen tree fat, the demoulding after standing two hours, then stand 24 hours.
3. in LED normal works, chip temperature is raised, and is increased to before and after 49 degree of melting point of paraffin wax, and paraffin undergoes phase transition,
The stress that thermal expansion is produced makes the electrode that gold thread departs from LED, as shown in fig. 7, then LED starts open circuit, when chip temperature drops to
To a certain degree, gold thread is reconnected with LED electrode, forms conducting, and LED chip temperature rises again, reaches alarm temperature, gold thread
Depart from again, LED open circuits;Said process may be repeated, and realize the automatic alarm to certain temperature section and recovery.
4. realize that effect is as shown in Figure 8.Fig. 8 is the interface that voltage signal is converted into LED chip using forward voltage method
Temperature, it can be seen that the junction temperature of LED chip reaches 41 degree or so, LED chip by auto-cutout, when junction temperature decline, LED chip
To automatically turn on, and realize recovering.In this case, the temperature for realizing alarm is 41 degree, and it is low 8 degree to become material paraffin melting point than temperature.
Specific embodiment of the invention is described above.It is to be appreciated that the invention is not limited in above-mentioned
Particular implementation, those skilled in the art can within the scope of the claims make various deformations or amendments, this not shadow
Sound substance of the invention.
Claims (7)
1. a kind of luminous diode temperature alarm based on phase-change material, it is characterised in that:In the envelope of conventional light emitting diodes
During dress, a part of the phase-change material as encapsulation is added, and phase is obtained as sealant from epoxy resin or silica gel
Become the encapsulating structure of material and LED chip directly contact, the heating of LED chip or the temperature of external environment condition are raised so that part
Phase-change material reaches fusing point and undergoes phase transition, and the thermal stress of generation is drastically expanded during phase transformation, makes the connection of chip and encapsulating structure
Line skew causes LED open circuits, has reached the electric current in uniform temperature and has disconnected and the luminous warning effect for stopping, core after LED open circuits
The decline of piece temperature or the decline of ambient temperature so that chip connects with chip Top electrode again with the connecting line of encapsulating structure
Touch, LED conductings, so that alarm is eliminated automatically.
2. temperature alarm according to claim 1, it is characterised in that:The phase-change material is electric insulation, solid-liquid
, at 30~200 DEG C, thermal expansion system is big during phase transformation, in the liquid state almost transparent material for phase transformation fusing point.
3. temperature alarm according to claim 1, it is characterised in that:Alarm temperature can be by selecting the phase of different melting points
Become material to adjust, such as phase-change material fusing point is T0, survey alarm temperature general in T0- 10 DEG C are arrived T0Between+5 DEG C.
4. temperature alarm according to claim 1, it is characterised in that:Alarm signal can be the mutation of current signal,
After such as reaching alarm temperature, electric current is changed into 0;Alarm signal can also be the mutation of optical signal, after such as reaching alarm temperature, LED
Luminous stopping;Alarm signal can also connect LED, to the signal of the external devices of electricity and the optical signal sensing of LED.
5. temperature alarm according to claim 1, it is characterised in that:Chip can be gold with the connecting line of encapsulating structure
The conductor material of the LED encapsulation such as line, aluminum steel, copper cash.
6. temperature alarm according to claim 1, it is characterised in that:The positive and negative electrode of LED chip can with connecting wire
Being welded together, or simply being contacted with the electrode on chip after ball bonding or pressure welding, as long as partial phase change material
When undergoing phase transition, the stress of thermal expansion makes the electrode offset of connecting wire and LED chip enough.
7. temperature alarm according to claim 1, it is characterised in that:Chip temperature declines after LED chip open circuit, or outward
The decline of portion's environment temperature so that temperature becomes material shrinkage and combines gravity factor, and chip can be in LED with the connecting line of encapsulating structure
Chip temperature or ambient temperature decline reconnect in 1~10 DEG C, recover the energization of LED chip.
Priority Applications (1)
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CN201611191931.XA CN106768463B (en) | 2016-12-21 | 2016-12-21 | A kind of luminous diode temperature alarm based on phase-change material |
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CN201611191931.XA CN106768463B (en) | 2016-12-21 | 2016-12-21 | A kind of luminous diode temperature alarm based on phase-change material |
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CN106768463A true CN106768463A (en) | 2017-05-31 |
CN106768463B CN106768463B (en) | 2019-08-09 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108151891A (en) * | 2017-12-22 | 2018-06-12 | 谢涛 | Trigger system in a kind of equipment alarm internet |
CN109979146A (en) * | 2019-04-17 | 2019-07-05 | 宋天诣 | A kind of high temperature safe prior-warning device using solid conductive material fusing point fixed characteristic |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100032702A1 (en) * | 2008-08-11 | 2010-02-11 | E. I. Du Pont De Nemours And Company | Light-Emitting Diode Housing Comprising Fluoropolymer |
CN202719457U (en) * | 2012-09-10 | 2013-02-06 | 惠州市西顿工业发展有限公司 | Light emitting diode (LED) bulb lamp |
CN102968876A (en) * | 2012-11-30 | 2013-03-13 | 大连隆星新材料有限公司 | Paraffin fire alarm device |
CN103762296A (en) * | 2014-01-08 | 2014-04-30 | 广东工业大学 | Light emitting diode encapsulating structure |
CN104235800A (en) * | 2014-09-15 | 2014-12-24 | 西安交通大学 | Phase change temperature control device for intermittent high-power LED (light-emitting diode) |
CN104235801A (en) * | 2014-09-15 | 2014-12-24 | 西安交通大学 | High-power LED (Light Emitting Diode) phase-change temperature control device with heat pipes |
CN105864044A (en) * | 2016-05-17 | 2016-08-17 | 邢绍校 | Temperature control device for air compressor |
-
2016
- 2016-12-21 CN CN201611191931.XA patent/CN106768463B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100032702A1 (en) * | 2008-08-11 | 2010-02-11 | E. I. Du Pont De Nemours And Company | Light-Emitting Diode Housing Comprising Fluoropolymer |
CN202719457U (en) * | 2012-09-10 | 2013-02-06 | 惠州市西顿工业发展有限公司 | Light emitting diode (LED) bulb lamp |
CN102968876A (en) * | 2012-11-30 | 2013-03-13 | 大连隆星新材料有限公司 | Paraffin fire alarm device |
CN103762296A (en) * | 2014-01-08 | 2014-04-30 | 广东工业大学 | Light emitting diode encapsulating structure |
CN104235800A (en) * | 2014-09-15 | 2014-12-24 | 西安交通大学 | Phase change temperature control device for intermittent high-power LED (light-emitting diode) |
CN104235801A (en) * | 2014-09-15 | 2014-12-24 | 西安交通大学 | High-power LED (Light Emitting Diode) phase-change temperature control device with heat pipes |
CN105864044A (en) * | 2016-05-17 | 2016-08-17 | 邢绍校 | Temperature control device for air compressor |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108151891A (en) * | 2017-12-22 | 2018-06-12 | 谢涛 | Trigger system in a kind of equipment alarm internet |
CN109979146A (en) * | 2019-04-17 | 2019-07-05 | 宋天诣 | A kind of high temperature safe prior-warning device using solid conductive material fusing point fixed characteristic |
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