CN106768437A - Temperature detection system and method - Google Patents
Temperature detection system and method Download PDFInfo
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- CN106768437A CN106768437A CN201510831285.8A CN201510831285A CN106768437A CN 106768437 A CN106768437 A CN 106768437A CN 201510831285 A CN201510831285 A CN 201510831285A CN 106768437 A CN106768437 A CN 106768437A
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- G—PHYSICS
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- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
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Abstract
The invention relates to the field of temperature detection, in particular to a temperature detection system and a method, wherein the system comprises: a transistor circuit, a counter, and a conversion circuit; the transistor of the transistor circuit works in a subthreshold region and is used for generating a signal with the frequency changing along with the temperature and transmitting the signal with the frequency changing along with the temperature to the counter; the counter is connected between the transistor circuit and the conversion circuit, counts the signals of which the frequency changes along with the temperature, and transmits the obtained count value to the conversion circuit; the conversion circuit is connected with the counter and is used for converting the counting value into a digital signal representing temperature. The invention can make the temperature detection system achieve the purposes of low power consumption, small area and high measurement precision.
Description
Technical field
The present invention relates to temperature detection field, and in particular to a kind of transistor is operated in the temperature of subthreshold region
Degree detecting system and method.
Background technology
The circuit of traditional detection temperature according to device, (such as imitate by diode, Metal-oxide-semicondutor
Answer transistor MOSFET, bipolar transistor BJT etc.) characteristic variation with temperature and drift about
This mechanism using device normal work area (for MOSFET, its gate source voltage be more than its threshold
Threshold voltage) temperature detection is carried out, its main composition is such：First with device property with temperature
The temperature inversion that will perceive of change be curtage, then will be continuous using a/D converter circuit
Curtage analog quantity is converted to discrete digital quantity, the electricity for then varying with temperature this sign
The digital quantity of stream or voltage is further linearly converted or is decoded as characterizing the digital quantity of sense temperature, such as
Shown in Fig. 1.
The shortcoming of the circuit of this traditional detection temperature：Device is operated in normal work area, its voltage
Higher, electric current is larger, therefore circuit power consumption is larger；Detection temperature will be characterized using a/D converter circuit
Current/voltage analog signal be converted to the current/voltage data signal for characterizing detection temperature, therefore mould-
Number change-over circuit area is larger, also results in integrated circuit power consumption larger；Using linear transform circuit (line
Property decoder) by characterize detection temperature current/voltage data signal linearly be converted to sign detection temperature
The data signal of degree, the current/voltage analog signal variation with temperature for characterizing detection temperature is approximately
Linear relationship, and have ignored the non-thread between the current/voltage analog signal and temperature that characterize detection temperature
Sexual intercourse, this can cause larger error in some temperature ranges, reduce temperature detecting precision；
Under normal working voltage, the current/voltage variation with temperature of detection temperature is not obvious, limits detection
The raising of the precision of temperature.
The content of the invention
The invention provides a kind of system for detecting temperature, so that system for detecting temperature reaches low in energy consumption, face
The small, certainty of measurement of product purpose high.
To achieve the above object, the invention provides following technical scheme：
A kind of system for detecting temperature, it is characterised in that including：Transistor circuit, counter, conversion
Circuit；
The transistor of the transistor circuit is operated in subthreshold region, for generating what frequency was varied with temperature
Signal, and send the signal that the frequency is varied with temperature to the counter；
The counter is connected between the transistor circuit and the change-over circuit, to the frequency
The signal for varying with temperature is counted, and the count value that will be obtained sends the change-over circuit to；
The change-over circuit is connected with the counter, for the count value to be converted into sign temperature
Data signal.
Preferably, the change-over circuit is linear transform circuit or non-linear conversion circuit.
Preferably, the transistor circuit is the MOSFET circuits for being operated in subthreshold region.
Preferably, the MOSFET circuits for being operated in subthreshold region are to be operated in subthreshold region
MOSFET ring oscillator circuits.
Preferably, the MOSFET ring oscillator circuits for being operated in subthreshold region are anti-phase by odd number
Device is constituted, and the output end per one-level phase inverter connects the input of next stage phase inverter, and afterbody is anti-
The output end of phase device is connected to the input of first order phase inverter.
Preferably, the supply voltage vdd of each phase inverter meets：More than 2 times of thermal voltage Vr and it is less than
Threshold voltage Vy；The threshold voltage Vy is p-type MOSFET threshold voltages in each phase inverter
Vthp absolute values, or the threshold voltage Vy is N-type MOSFET threshold values electricity in each phase inverter
Pressure Vthn absolute values, or the threshold voltage Vy is p-type MOSFET threshold values in each phase inverter
Voltage Vthp absolute values and N-type MOSFET threshold voltage vt hn minimizations of the sum of absolute value.
Preferably, the supply voltage vdd of each phase inverter meets：More than 3 times of thermal voltage Vr and it is less than
Threshold voltage Vy；The threshold voltage Vy is p-type MOSFET threshold voltages in each phase inverter
Vthp absolute values, or the threshold voltage Vy is N-type MOSFET threshold values electricity in each phase inverter
Pressure Vthn absolute values, or the threshold voltage Vy is p-type MOSFET threshold values in each phase inverter
Voltage Vthn absolute values and N-type MOSFET threshold voltage vt hn minimizations of the sum of absolute value.
Preferably, the change-over circuit includes multiple linear transform circuits, for realizing non-linear conversion.
Preferably, the system also includes：Frequency dividing circuit；The frequency dividing circuit is connected to the crystal
Between pipe circuit and the counter, for being divided to the signal that the frequency is varied with temperature.
A kind of temperature checking method, it is characterised in that methods described includes：
Changed using the transistor circuit sense temperature for being operated in subthreshold region；
Obtain the signal that the frequency of the transistor circuit output is varied with temperature；
The signal that the frequency is varied with temperature is counted, the first count value is obtained；
First count value is converted to the data signal for characterizing temperature.
A kind of temperature checking method, it is characterised in that methods described includes：
Changed using the transistor circuit sense temperature for being operated in subthreshold region；
Obtain the signal that the frequency of the transistor circuit output is varied with temperature；
The signal that the frequency is varied with temperature is divided, fractional frequency signal is obtained；
The fractional frequency signal is counted, the first count value is obtained；
First count value is converted to the data signal for characterizing temperature.
Preferably, the transistor circuit is：MOSFET ring oscillator circuits.
The beneficial effects of the present invention are：
System for detecting temperature and method that the present invention is provided, the transistor circuit for being operated in subthreshold region are perceived
Temperature change, to generate the signal that frequency is varied with temperature；Counter is varied with temperature to the frequency
Signal count to get count value, the count value is converted into change-over circuit the number for characterizing temperature
Word signal.Low in energy consumption, area is small, certainty of measurement is high to reach system for detecting temperature using the present invention
Purpose.
Brief description of the drawings
Fig. 1 is the structural representation of temperature sensing circuit in the prior art.
Fig. 2 is a kind of structural representation of embodiment of the present invention system for detecting temperature.
Fig. 3 is the structural representation of the MOSFET ring oscillator circuits that the present invention is operated in subthreshold region
Figure.
Fig. 4 is another structural representation of embodiment of the present invention system for detecting temperature.
Fig. 5 is the third structural representation of embodiment of the present invention system for detecting temperature.
Fig. 6 is a kind of structural representation of embodiment of the present invention count value and temperature value transformational relation.
Fig. 7 is another structural representation of embodiment of the present invention count value and temperature value transformational relation
Figure.
Fig. 8 is the 4th kind of structural representation of embodiment of the present invention system for detecting temperature.
Fig. 9 is the 5th kind of structural representation of embodiment of the present invention system for detecting temperature
Figure 10 is a kind of flow chart of embodiment of the present invention temperature checking method.
Figure 11 is another flow chart of embodiment of the present invention temperature checking method.
Specific embodiment
In order that those skilled in the art can be further understood that feature of the invention and technology contents, under
Face elaborates with reference to drawings and embodiments to the embodiment of the present invention.
For the shortcoming of the circuit of above-mentioned traditional detection temperature, the embodiment of the present invention provides a kind of temperature
Detecting system, to reach the purpose for improving accuracy of detection, reducing power consumption, save circuit board.
Fig. 2 is a kind of structural representation of embodiment of the present invention system for detecting temperature, and the system includes：
Transistor circuit, counter, change-over circuit；The transistor of the transistor circuit is operated in subthreshold region,
For generating the frequency signal for varying with temperature, and the signal that the frequency is varied with temperature is sent to
The counter；The counter is connected between the transistor circuit and the change-over circuit, right
The signal that the frequency is varied with temperature is counted, and the count value that will be obtained sends the conversion to
Circuit；The change-over circuit is connected with the counter, for the count value to be converted into sign temperature
The data signal of degree.
In practical application, transistor circuit output characterizes the signal that the frequency of detection temperature is varied with temperature,
The periodicity of the signal that counter is varied with temperature to the frequency for characterizing detection temperature count to get
Numerical value, and count value is exported to change-over circuit, the count value that change-over circuit will characterize detection temperature turns
Be changed to the data signal for characterizing detection temperature, so as to realize low-power consumption and that area is small is digital
Temperature sensing circuit.
It should be noted that the most important parameter for characterizing characteristics of sub-threshold is the threshold voltage of transistor,
The threshold voltage variation with temperature of transistor and drift about.
In the embodiment of the present invention, the transistor for being operated in subthreshold region in transistor circuit can be bipolar
Transistor, metal-semiconductor field effect transistor (MESFET), carbon nanotube field-effect transistor
The device that all characteristics such as (NanoTube FET), MOSFET element are varied with temperature, wherein,
The difference exponentially change of MOSFET element subthreshold region drain-source current and gate source voltage and threshold voltage is closed
System, the drift of MOSFET threshold voltages can cause the current-voltage relation of subthreshold region significantly to drift about, because
This by the use of be operated in the MOSFET circuits of subthreshold region as the transistor circuit of the embodiment of the present invention be this
Inventive embodiments are preferably selected.
Further, due to being operated in the MOSFET circuits of subthreshold region its electric currents compared with normal work
The small multiple orders of magnitude of electric current of MOSFET circuits, the MOSFET circuits to subthreshold region work directly enter
Row current/voltage detection difficult, its detection circuit cost is also very high, therefore to subthreshold region work
The detection direct detection of MOSFET circuits its frequency signal for varying with temperature.
Further, it is operated in the discharge and recharge electricity of its every one-level of the MOSFET ring oscillators of subthreshold region
Stream is varied with temperature, therefore characterizes the oscillation frequency of the charge/discharge rates of the MOSFET ring oscillators
Rate is also to vary with temperature, it is possible thereby to the temperature for perceiving is characterized using the frequency of oscillation of ring oscillator,
I.e. using being operated in the MOSFET ring oscillator circuits of subthreshold region as being operated in subthreshold region
MOSFET circuits.
Further, to being operated in the frequency of oscillation of the MOSFET ring oscillator circuits of subthreshold region
Sign can be characterized using the counting of the cycle of oscillation number in certain period of time, specifically, in order to
Vibration is easily formed, as shown in figure 3, being operated in the MOSFET ring oscillators of subthreshold region by odd number
Individual phase inverter composition, whole circuit output is Vout, and it is in be input into, wherein, per one-level phase inverter
Output end connects the input of next stage phase inverter, and the output end of afterbody phase inverter is connected to first
The input of level phase inverter, first input of phase inverter is in figure 3, is output as out, power supply
Voltage is vdd, and the supply voltage of each phase inverter is identical in MOSFET ring oscillators is vdd,
And vdd meets：More than 3 times of thermal voltage Vr and less than threshold voltage Vy, the threshold voltage Vy
It is p-type MOSFET threshold voltage vt hp absolute values in each phase inverter, or the threshold voltage
Vy is electric for N-type MOSFET threshold voltage vt hn absolute values in each phase inverter, or the threshold value
Pressure Vy is p-type MOSFET threshold voltage vt hp absolute values and N-type MOSFET in each phase inverter
Threshold voltage vt hn minimizations of the sum of absolute value.Certainly, for constituting subthreshold region by odd number phase inverter
MOSFET ring oscillator circuits, the supply voltage vdd of phase inverter is if greater than 2 times in circuit
Thermal voltage Vr simultaneously can also meet requirement less than threshold voltage Vy.
In the present embodiment, change-over circuit can be linear transform circuit or non-linear conversion circuit, turn
Change circuit and can also be multiple linear transform circuits for realizing non-linear conversion.It is real as shown in Figure 4
Apply example and represent change-over circuit for linear transform circuit, embodiment illustrated in fig. 5 represents that change-over circuit is non-thread
Property change-over circuit, wherein, linear transform circuit can be realized by linear decoder, non-linear conversion electricity
Road can be realized by non-linear decoder.
Further, the basis of linear transform circuit is that count value in the unit interval by counter is seen
Make the linear function of temperature, as shown in the near linear in Fig. 6, and actually the unit of counter when
Interior count value is the nonlinear function of temperature, as shown in the actual curve in Fig. 6.Linearly turning
Change under circuit, the count value N1 in the unit interval is converted to corresponding temperature T1 ', and actual corresponding temperature
It is T1, its error is T1 '-T1；Count value N2 in unit interval is converted to corresponding temperature T2 ',
And actual corresponding temperature is T2, its error is T2 '-T2；Count value N3 in unit interval is converted to
Corresponding temperature T3 ', and actual corresponding temperature is T3, its error is T3 '-T3.
Further, the basis of non-linear conversion circuit is the count value in the unit interval by counter
Regard the nonlinear function of temperature as, as shown in the actual curve in Fig. 7.Under non-linear conversion circuit,
Count value N1 in unit interval is converted to corresponding temperature T1, and actual corresponding temperature is T1, its mistake
Difference is 0；Count value N2 in unit interval is converted to corresponding temperature T2, and actual corresponding temperature is
T2, its error is 0；Count value N3 in unit interval is converted to corresponding temperature T3, and actual right
Temperature is answered for T3, its error is 0.Therefore non-linear conversion circuit has higher compared with linear transform circuit
Conversion accuracy.
Further, complete non-linear conversion is said in circuit or software from the angle for realizing cost is
It is impossible, Complete heart block is approached with multistage linear conversion and is changed, as shown in fig. 7, in multistage linear
Under conversion, the count value N1 in the unit interval is converted to corresponding temperature T1, and actual corresponding temperature is
T1, its error is 0；Count value N2 in unit interval is converted to corresponding temperature T2, and actual right
Temperature is answered for T2, its error is 0；Count value N3 in unit interval is converted to corresponding temperature T3,
And actual corresponding temperature is T3, its error is 0.Therefore non-linear turn for being realized with multistage linear conversion
Change circuit has conversion accuracy higher compared with linear transform circuit.
In order to improve the accuracy of detection of the MOSFET ring oscillator circuits to being operated in subthreshold region, also
Frequency dividing circuit can be increased, by frequency dividing circuit to the frequency dividing of system for detecting temperature signal, obtain high-precision
The temperature digital signal of degree.
If Fig. 8 is the 4th kind of structural representation of embodiment of the present invention system for detecting temperature, with Fig. 4 not
With, frequency dividing circuit is increased in structural representation shown in Fig. 4, wherein, frequency dividing circuit is connected to
Between transistor circuit and counter, for being divided to the frequency signal.
In this embodiment, the MOSFET ring oscillator circuits output for being operated in subthreshold region characterizes temperature
The signal that the frequency of degree is varied with temperature；Frequency dividing circuit is carried out to the signal that the frequency is varied with temperature
Frequency dividing, obtains fractional frequency signal；Counter is counted to the fractional frequency signal, obtains count value；Turn
Change circuit and the count value is converted to the data signal for characterizing temperature, so as to realize low-power consumption, face
The small and accuracy of detection of product digital temperature sensing circuit high.
In order to improve data conversion precision, such as Fig. 9 is the 5 of embodiment of the present invention system for detecting temperature
Structural representation is planted, from unlike Fig. 8, change-over circuit is realized using nonlinear converter, so that
System for detecting temperature has conversion accuracy higher.
Correspondingly, the embodiment of the present invention additionally provides a kind of temperature checking method, as shown in Figure 10, is
A kind of flow chart of embodiment of the present invention temperature checking method, comprises the following steps：
Step 101：Changed using the transistor circuit sense temperature for being operated in subthreshold region.
It should be noted that the transistor circuit can be MOSFET ring oscillator circuits.
Further, can be operated in subthreshold region by odd number anti-phase for MOSFET ring oscillator circuits
Device is constituted.
Step 102：Obtain the signal that the frequency of the transistor circuit output is varied with temperature.
Step 103：The signal that the frequency is varied with temperature is counted, the first count value is obtained.
Step 104：First count value is converted to the data signal for characterizing temperature.
The present embodiment temperature checking method, obtains characterizing temperature by the transistor circuit for being operated in subthreshold region
The frequency signal of degree, then by the counting to the frequency signal and the numeral for being converted to sign temperature
Signal, the temperature checking method high so as to realize accuracy of detection.
In order to improve the accuracy of detection of the MOSFET ring oscillator circuits to being operated in subthreshold region, also
The frequency dividing to ring oscillator circuit can be increased, the temperature digital for obtaining higher precision by frequency dividing is believed
Number.
If Figure 11 is another flow chart of embodiment of the present invention temperature checking method, and shown in Figure 10
Unlike method, the transistor circuit frequency dividing to subthreshold region is increased, method as shown in figure 11 includes
Following steps：
Step 201：Changed using the transistor circuit sense temperature for being operated in subthreshold region.
It should be noted that the transistor circuit can be MOSFET ring oscillator circuits.
Further, can be operated in subthreshold region by odd number anti-phase for MOSFET ring oscillator circuits
Device is constituted.
Step 202：Obtain the signal that the frequency of the transistor circuit output is varied with temperature.
Step 203：The signal that the frequency is varied with temperature is divided, fractional frequency signal is obtained.
Step 204：The fractional frequency signal is counted, the first count value is obtained.
Step 205：First count value is converted to the data signal for characterizing temperature.
Temperature checking method provided in an embodiment of the present invention, using the transistor circuit for being operated in subthreshold region
Output characterizes the signal that the frequency of temperature is varied with temperature, and the signal that the frequency is varied with temperature is entered
After row frequency dividing, fractional frequency signal is obtained；Again by the counting to the fractional frequency signal be converted to sign
The data signal of temperature, the temperature checking method higher so as to realize accuracy of detection.
In sum, system for detecting temperature provided in an embodiment of the present invention and method, using being operated in Asia
The MOSFET ring oscillator circuits output in threshold area characterizes the signal that the frequency of temperature is varied with temperature；
The signal that the frequency is varied with temperature is divided using frequency dividing circuit, obtains fractional frequency signal；Meter
Number device is counted to the fractional frequency signal, obtains count value；Change-over circuit changes the count value
Be characterize temperature data signal, so as to realize low-power consumption, area is small and accuracy of detection is high
Digital system for detecting temperature.
The embodiment of the present invention is described in detail above, specific embodiment pair used herein
The present invention is set forth, the explanation of above example be only intended to help understand system of the invention and
Method；Simultaneously for those of ordinary skill in the art, according to thought of the invention, specific real
Apply and be will change in mode and range of application, in sum, this specification content should not be understood
It is limitation of the present invention.
Claims (12)
1. a kind of system for detecting temperature, it is characterised in that including：Transistor circuit, counter, turn
Change circuit；
The transistor of the transistor circuit is operated in subthreshold region, for generating what frequency was varied with temperature
Signal, and send the signal that the frequency is varied with temperature to the counter；
The counter is connected between the transistor circuit and the change-over circuit, to the frequency
The signal for varying with temperature is counted, and the count value that will be obtained sends the change-over circuit to；
The change-over circuit is connected with the counter, for the count value to be converted into sign temperature
Data signal.
2. system for detecting temperature according to claim 1, it is characterised in that the change-over circuit
It is linear transform circuit or non-linear conversion circuit.
3. system for detecting temperature according to claim 2, it is characterised in that the transistor electricity
Road is the MOSFET circuits for being operated in subthreshold region.
4. system for detecting temperature according to claim 3, it is characterised in that described to be operated in Asia
The MOSFET circuits in threshold area are the MOSFET ring oscillator circuits for being operated in subthreshold region.
5. system for detecting temperature according to claim 4, it is characterised in that described to be operated in Asia
The MOSFET ring oscillator circuits in threshold area are made up of odd number phase inverter, per the defeated of one-level phase inverter
Go out the input of end connection next stage phase inverter, the output end of afterbody phase inverter is connected to the first order
The input of phase inverter.
6. system for detecting temperature according to claim 5, it is characterised in that each phase inverter
Supply voltage vdd meets：More than 2 times of thermal voltage Vr and less than threshold voltage Vy；The threshold voltage
Vy is electric for p-type MOSFET threshold voltage vt hp absolute values in each phase inverter, or the threshold value
Pressure Vy is N-type MOSFET threshold voltage vt hn absolute values in each phase inverter, or the threshold value
Voltage Vy is p-type MOSFET threshold voltage vt hp absolute values and N-type in each phase inverter
MOSFET threshold voltage vt hn minimizations of the sum of absolute value.
7. system for detecting temperature according to claim 5, it is characterised in that each phase inverter
Supply voltage vdd meets：More than 3 times of thermal voltage Vr and less than threshold voltage Vy；The threshold voltage
Vy is electric for p-type MOSFET threshold voltage vt hp absolute values in each phase inverter, or the threshold value
Pressure Vy is N-type MOSFET threshold voltage vt hn absolute values in each phase inverter, or the threshold value
Voltage Vy is p-type MOSFET threshold voltage vt hn absolute values and N-type in each phase inverter
MOSFET threshold voltage vt hn minimizations of the sum of absolute value.
8. system for detecting temperature according to claim 2, it is characterised in that the change-over circuit
Including multiple linear transform circuits, for realizing non-linear conversion.
9. the system for detecting temperature according to any one of claim 1 to 8, it is characterised in that institute
Stating system also includes：Frequency dividing circuit；The frequency dividing circuit is connected to the transistor circuit with the meter
Between number device, for being divided to the signal that the frequency is varied with temperature.
10. a kind of temperature checking method, it is characterised in that methods described includes：
Changed using the transistor circuit sense temperature for being operated in subthreshold region；
Obtain the signal that the frequency of the transistor circuit output is varied with temperature；
The signal that the frequency is varied with temperature is counted, the first count value is obtained；
First count value is converted to the data signal for characterizing temperature.
11. a kind of temperature checking methods, it is characterised in that methods described includes：
Changed using the transistor circuit sense temperature for being operated in subthreshold region；
Obtain the signal that the frequency of the transistor circuit output is varied with temperature；
The signal that the frequency is varied with temperature is divided, fractional frequency signal is obtained；
The fractional frequency signal is counted, the first count value is obtained；
First count value is converted to the data signal for characterizing temperature.
12. temperature checking method according to claim 10 or 11, it is characterised in that described
Transistor circuit is：
MOSFET ring oscillator circuits.
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Cited By (6)
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| CN107505058A (en) * | 2017-07-12 | 2017-12-22 | 电子科技大学 | Digital temperature sensor under time domain |
| CN108711735A (en) * | 2018-08-20 | 2018-10-26 | 江苏科大亨芯半导体技术有限公司 | Temperature-compensation circuit for directly adjusting laser driver |
| WO2018228389A1 (en) * | 2017-06-13 | 2018-12-20 | 京东方科技集团股份有限公司 | Temperature sensor, display panel and display apparatus |
| CN109450411A (en) * | 2019-01-04 | 2019-03-08 | 京东方科技集团股份有限公司 | Latch and its driving method and chip |
| CN109883561A (en) * | 2018-12-20 | 2019-06-14 | 佛山臻智微芯科技有限公司 | A kind of digital temperature sensor circuit structure of low-power consumption being easily integrated |
| KR20220057224A (en) * | 2020-10-29 | 2022-05-09 | 경희대학교 산학협력단 | Temperature sensor circuitry of measuring temperature in pixel of display and display apparatus including the same |
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| CN109883561A (en) * | 2018-12-20 | 2019-06-14 | 佛山臻智微芯科技有限公司 | A kind of digital temperature sensor circuit structure of low-power consumption being easily integrated |
| CN109450411A (en) * | 2019-01-04 | 2019-03-08 | 京东方科技集团股份有限公司 | Latch and its driving method and chip |
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| KR20220057224A (en) * | 2020-10-29 | 2022-05-09 | 경희대학교 산학협력단 | Temperature sensor circuitry of measuring temperature in pixel of display and display apparatus including the same |
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