CN106756865A - A kind of magnetron sputtering reaction atmosphere self feed back control system and its application method - Google Patents
A kind of magnetron sputtering reaction atmosphere self feed back control system and its application method Download PDFInfo
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- CN106756865A CN106756865A CN201611149231.4A CN201611149231A CN106756865A CN 106756865 A CN106756865 A CN 106756865A CN 201611149231 A CN201611149231 A CN 201611149231A CN 106756865 A CN106756865 A CN 106756865A
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- light
- feed back
- control system
- spectrometer
- controller
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
- C23C14/547—Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of magnetron sputtering reaction atmosphere self feed back control system and its application method, it is made up of magnetic control sputtering device and feed back control system, magnetic control sputtering device includes reacting gas storage device and vacuum chamber, reacting gas storage device passes through wireway and vacuum chamber, magnetron is provided with vacuum chamber, magnetron is provided with discharge plasma；Feed back control system is by light probe, spectrometer, controller and solenoid valve block into light probe is located in the vacuum chamber, and spectrometer is connected by optical fiber with light probe, and controller and spectrometer are electrically connected, and controller and magnetic valve are electrically connected.The control that the present invention passes through reacted constituent in plasma area, can control the parameters such as composition, thickness and the uniformity of prepared film, improve coated product quality.The technique of reactive sputtering compound film can be made to maintain on a metastable operating point, technology stability is substantially improved, and sedimentation rate is also improved.
Description
Technical field
The present invention relates to reaction magnetocontrol sputtering plated film field, more particularly to a kind of magnetron sputtering reaction atmosphere self feed back control
System processed and its application method.
Background technology
With the development of modern industrial technology, the application field of compound film is more and more extensive, the quality requirement of film
Also it is further harsh.Relative to chemical vapour deposition technique (CVD) prepare compound thin-film technique, reactive magnetron sputtering method can because possessing
The advantages of handling good, coating temperature is low, coating quality is reliable and stable, has been widely used in all kinds of plated film fields.And react
The hesitation occurred in magnetron sputtering (improves reaction gas flow, sputter rate declines to a great extent, and reason is because target surface is formed
Compound layer, i.e. target poison ing) be the technical matters fluctuation of service principal phenomena.So, it is in how target surface close
The sputtering state of metal mode, so as to keep sputtering raste high, and is obtained in that the change of required stoicheiometry on substrate
Compound film simultaneously has the key issue that higher deposition rate is the needs solution of reaction magnetocontrol sputtering technology.Due to reactive sputtering process
The hysteresis region of hysteresis effect is very narrow, and easily changes with the change of target and the surface state of vacuum drying oven cavity wall, therefore, it is real
The determination of the optimum response magnetron sputtering membrane process on border and the still non-easy thing of stabilization.Researcher has done greatly in this respect for many years
Quantity research and trial, more practicable solution mainly has following four at present：1) obstruction reacting gas reaches target surface；
2) ram charging of reacting gas；3) change powering mode and suppress target poison ing；4) closed-loop control of reactive sputtering process.To go forward
Three kinds of methods have certain limitation, and use the closed-loop control of reactive sputtering process relatively more reliable and practicality, because working as
The working condition of target has many technological parameters that obvious change will all occur when metal mode is changed into reaction pattern, therefore, it is former
Then going up many parameters of technique process can be used as feedback signal, such as target voltage, target current, reacting gas partial pressure, sputtering gas
Plasma emission spectroscopy of body gross pressure, sedimentation rate, the characteristic of deposition film and discharge space etc., because these parameters exist
The flex point of retardant curve can all be changed significantly.But not actually above-mentioned all parameters may serve to implementation process
Precise control, current is more widely the mass spectrography of target voltage feedback control method and detection reacting gas partial pressure, is used
The strong and weak method for changing to be controlled reacting gas of the specific plasma emission spectroscopy of discharge space, i.e. light monitoring of emission
Related basic research did in method (optical emission monitor, OEM), domestic only indivedual research institutions, did not possessed far
Production application condition.
The content of the invention
It is an object of the present invention to provide a kind of magnetron sputtering reaction atmosphere self feed back control system, by article on plasma
The control of reacted constituent in body area, can control the parameters such as composition, thickness and the uniformity of prepared film, so as to improve plating
Film product quality.
In order to solve the above technical problems, the present invention is adopted the following technical scheme that：
A kind of magnetron sputtering reaction atmosphere self feed back control system, is made up of magnetic control sputtering device and feed back control system,
Magnetic control sputtering device includes reacting gas storage device and vacuum chamber, and reacting gas storage device is connected by wireway and vacuum chamber
It is logical, magnetron is provided with vacuum chamber, magnetron is provided with discharge plasma；Feed back control system is by light probe, spectrometer, control
Device processed and solenoid valve block are located in the vacuum chamber into, light probe, and spectrometer is connected by optical fiber with light probe, controller and light
Spectrometer is electrically connected, and controller and magnetic valve are electrically connected.
In a kind of foregoing magnetron sputtering reaction atmosphere self feed back control system, spectrometer includes monochromator and photomultiplier transit
Device, light probe is connected with monochromator by optical fiber, and monochromator is connected with photoelectric multiplier by optical fiber, photoelectric multiplier and described
Controller is electrically connected.Specifically, the model of the magnetic valve：ZCK.
Used as one of which preferably implementation method, the chromatograph has display screen, and described adopting is shown by display screen
The light intensity signal setting value of the light for collecting, actual value, photoelectric multiplier High voltage output magnitude of voltage and setting value and actual value
Deviation, operating personnel can more intuitively observe relevant parameter, the data of light for collecting.
In a kind of foregoing magnetron sputtering reaction atmosphere self feed back control system, possesses serial ports RS232/ on the controller
485 communication interface, in order to be connected with computer, is programmed to controller by computer, controlled.
The invention also discloses a kind of foregoing application method of magnetron sputtering reaction atmosphere self feed back control system, for controlling
The injection rate of reacting gas during reactive magnetron sputtering method plated film processed, including following methods：Gathered in vacuum chamber by light probe
The light sent in sputter procedure, the light that light probe will be collected is oriented to monochromator, the light filtering that monochromator will be collected
Monochromatizing light；Monochromatic light is changed by photoelectric multiplier is enlarged into electric signal, the electric signal is then sent to controller；
Controller is opened according to the electric signal control magnetic valve for receiving, closed, increasing aperture or reduce aperture.
In a kind of application method of foregoing magnetron sputtering reaction atmosphere self feed back control system, by the display of spectrometer
The light intensity signal setting value of light that is collected described in screen display, actual value, photoelectric multiplier High voltage output magnitude of voltage and set
The deviation of definite value and actual value.
Compared with prior art, the control that the present invention passes through reacted constituent in plasma area, can control prepared
The parameters such as the composition of film, thickness and uniformity, improve coated product quality.The work of reactive sputtering compound film can be made
Skill is maintained on a metastable operating point, and technology stability is substantially improved, and sedimentation rate is also improved.
Brief description of the drawings
Fig. 1 is a kind of structural representation of embodiment of the invention；
Fig. 2 is the front panel schematic diagram of controller；
Fig. 3 is the rear board schematic diagram of controller；
Fig. 4 is the schematic diagram of display screen.
Reference：1- reacting gas storage devices, 2- magnetic valves, 3- discharge plasmas, 4- vacuum chambers, 5- optical fiber,
6- monochromators, 7- photoelectric multipliers, 8- magnetrons, 9- controllers, 10- spectrometers, 11- light probes.
The present invention is further illustrated with reference to the accompanying drawings and detailed description.
Specific embodiment
Embodiments of the invention 1：As shown in figure 1, a kind of magnetron sputtering reaction atmosphere self feed back control system, is splashed by magnetic control
Injection device and feed back control system are constituted, and magnetic control sputtering device includes reacting gas storage device 1 and vacuum chamber 4, reacting gas
Storage device 1 is connected by wireway with vacuum chamber 4, and magnetron 8 is provided with vacuum chamber 4, and magnetron 8 is provided with plasma discharging
Body 3；Feed back control system is made up of light probe 11, spectrometer 10, controller 9 and magnetic valve 2, and light probe 11 is located at the vacuum
In room 4, spectrometer 10 is connected by optical fiber 5 with light probe 11, and controller 9 and spectrometer 10 are electrically connected, controller 9 and magnetic valve
2 electrical connections.
Spectrometer 10 includes monochromator 6 and photoelectric multiplier 7, and light probe 11 is connected with monochromator 6 by optical fiber 5, monochromatic
Instrument 6 is connected with photoelectric multiplier 7 by optical fiber 5, and photoelectric multiplier 7 and the controller 9 are electrically connected.
The injection rate of reacting gas wants seeking time first to accurate during control reactive magnetron sputtering method plated film, if time delay
It is long then be not up to expected effect, in the present embodiment, the model of the magnetic valve 2：ZCK.The magnetic valve of model ZCK is anti-
It is enough fast between seasonable, so the effect for producing is also relatively preferable.
As shown in figure 4, the spectrometer 10 has display screen, the light intensity of the light for collecting is shown by display screen
Signal setting value, actual value, the deviation of photoelectric multiplier High voltage output magnitude of voltage and setting value and actual value, operating personnel can
More intuitively to observe relevant parameter, the data of the light for collecting.
The display panel of display screen：SP is goal-setting light intensity value；AP is actual measurement light intensity value；High pressure HV can be by HV knobs
Regulation PMT gains；PV is magnitude of voltage of the OEM outputs to piezo electric valve；RM represents computer long-distance control；AUTO represents control model
To automatically control；The numeral expression of the lower right corner " 86 " position of the Gain values of OEM devices, the Reset values lower right corner " 133 " position
Numeral sign, different OEM devices Gain with Reset values possibility it is different.Figure below liquid crystal panel can show light intensity reality
The bias direction of actual value and setting value.
Possesses the communication interface of serial ports RS232/485 on the controller 9, in order to be connected with computer, by calculating
Machine is programmed to controller, controls.Power knobs as shown in Figure 2：For the OEM controller power sources are switched.Auto knobs：
It is control model selecting switch, normal work under Auto patterns, into closed loop regulation.Local/Remote knobs：For local/remote
Journey mode switch, for selecting local control or computer long-distance control manually, both can only select wherein, another after selection
Plant control mode failure.SP knobs：Under local mode, for setting light intensity value manually.HV knobs：For adjusting photomultiplier
PMT gains cause PMT output valves, for initial setting；Gain knobs：Proportion adjustment knob, the system for adjusting OEM devices
Deviation, after typically setting, can not arbitrarily be adjusted using process.Reset knobs：Integral adjustment knob, for improving OEM devices
Response time, after typically setting, can not arbitrarily be adjusted using process.PIEZO buttons：Piezo electric valve occur it is viscous and can not be just
When normally open, pulse signal can be produced by the button, help viscous piezo electric valve smoothly to open.
As shown in figure 3, AC220V is the power outlet with fuse；RS232/485 is DB9 telecommunication sockets, is used for
Communicated with serial ports of computers, changed for OEM internal processes and upgraded；EP200 is DB9 spectrometer sockets, for connecting
Spectrometer；PIZEO is TNC sockets, for connecting piezo electric valve；Remote is DB9 sockets, real for being connected with PLC control interfaces
Existing computer long-distance control.
It is, using reactive sputtering as the ring in negative feedback control loop, to detect certain energy to design basic ideas of the invention
The physical quantity Y of enough reflection sputtering states, compared with the amount for being set as operating point, the differential signal for obtaining is through PID processing of circuit
After be input into control unit, control unit regulation can influence the physical quantity of sputtering state, play the function of control sputtering state.
It is anti-for controlling the invention also discloses a kind of application method of magnetron sputtering reaction atmosphere self feed back control system
The injection rate of reacting gas when answering magnetron sputtering method plated film, including following methods：Gathered by light probe 11 and splashed in vacuum chamber 4
The light sent during penetrating, the light that light probe 11 will be collected is oriented to monochromator 6, the light mistake that monochromator 6 will be collected
Filter monochromatizing light；Monochromatic light is changed by photoelectric multiplier 7 is enlarged into electric signal, the electric signal is then sent to control
Device 9；Controller 9 is opened according to the electric signal control magnetic valve 2 for receiving, closed, increasing aperture or reduce aperture.By spectrometer
10 display screen shows light intensity signal setting value, actual value, the High voltage output voltage of photoelectric multiplier 7 of the light for collecting
The deviation of value and setting value and actual value.
Claims (7)
1. a kind of magnetron sputtering reaction atmosphere self feed back control system, it is characterised in that by magnetic control sputtering device and feedback control
Device is constituted, and magnetic control sputtering device includes reacting gas storage device (1) and vacuum chamber (4), and reacting gas storage device (1) leads to
Cross wireway to be connected with vacuum chamber (4), magnetron (8) is provided with vacuum chamber (4), magnetron (8) is provided with discharge plasma
(3)；Feed back control system is made up of light probe (11), spectrometer (10), controller (9) and magnetic valve (2), light probe (11) position
In the vacuum chamber (4), spectrometer (10) is connected by optical fiber (5) with light probe (11), controller (9) and spectrometer (10)
Electrical connection, controller (9) and magnetic valve (2) are electrically connected.
2. a kind of magnetron sputtering reaction atmosphere self feed back control system according to claim 1, it is characterised in that spectrometer
(10) including monochromator (6) and photoelectric multiplier (7), light probe (11) is connected with monochromator (6) by optical fiber (5), monochromator
(6) it is connected by optical fiber (5) with photoelectric multiplier (7), photoelectric multiplier (7) and the controller (9) are electrically connected.
3. a kind of magnetron sputtering reaction atmosphere self feed back control system according to claim 2, it is characterised in that the electricity
The model of magnet valve (2)：ZCK.
4. a kind of magnetron sputtering reaction atmosphere self feed back control system according to claim 3, it is characterised in that the light
Spectrometer (10) is with display screen.
5. a kind of magnetron sputtering reaction atmosphere self feed back control system according to claim 3, it is characterised in that the control
Possesses the communication interface of serial ports RS232/485 on device (9) processed.
6. the application method of a kind of magnetron sputtering reaction atmosphere self feed back control system described in any one of claim 2 to 5, its
It is characterised by, the injection rate for controlling reacting gas during reactive magnetron sputtering method plated film, including following methods：Visited by light
The light sent in head (11) collection vacuum chamber (4) interior sputter procedure, the light that light probe (11) will be collected is oriented to monochromator
(6) light that, monochromator (6) will be collected is filtered into monochromatic light；Monochromatic light is changed by photoelectric multiplier (7) is enlarged into electricity
Signal, is then sent to controller (9) by the electric signal；Controller (9) controls magnetic valve (2) to open according to the electric signal for receiving
Open, close, increasing aperture or reduce aperture.
7. a kind of application method of magnetron sputtering reaction atmosphere self feed back control system according to claim 6, its feature
It is that light intensity signal setting value, actual value, the photoelectricity times of the light for collecting are shown by the display screen of spectrometer (10)
Increase the deviation of device (7) High voltage output magnitude of voltage and setting value and actual value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611149231.4A CN106756865A (en) | 2016-12-14 | 2016-12-14 | A kind of magnetron sputtering reaction atmosphere self feed back control system and its application method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611149231.4A CN106756865A (en) | 2016-12-14 | 2016-12-14 | A kind of magnetron sputtering reaction atmosphere self feed back control system and its application method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109207948A (en) * | 2018-09-30 | 2019-01-15 | 大连理工大学 | A method of for reaction magnetocontrol sputtering Detection of Stability and control |
| CN110967303A (en) * | 2020-01-02 | 2020-04-07 | 彭忠祥 | Online continuous detection system for quality of online coating film of float glass |
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| CN110967303B (en) * | 2020-01-02 | 2022-11-01 | 彭忠祥 | Online continuous detection system for quality of online coating film of float glass |
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Application publication date: 20170531 |