CN106751915A - 一种纳米级电子芯片封装材料及制备方法 - Google Patents

一种纳米级电子芯片封装材料及制备方法 Download PDF

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CN106751915A
CN106751915A CN201611223143.4A CN201611223143A CN106751915A CN 106751915 A CN106751915 A CN 106751915A CN 201611223143 A CN201611223143 A CN 201611223143A CN 106751915 A CN106751915 A CN 106751915A
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王行柱
肖军
吴卫平
肖启振
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Suzhou Creates A New Mstar Technology Ltd
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Abstract

本发明公开了一种纳米级电子芯片封装材料及制备方法，包括环氧预聚物 15‑65％；环氧改性有机硅预聚物纳米粒子 30‑70％；固化剂5‑25％；促进剂 0‑1％；其他助剂 0‑1％。其中固化剂为纳米结构的端氨基和羟基 POSS。通过选取含氢硅烷和端乙烯基聚氧化乙烯，在 Pt 催化剂作用下及与二官能团硅烷和单官能团封头剂反应，在氨催化剂的作用下进行共水解，再加入固化剂，搅拌均匀得到封装材料。采用此种技术的产品避免了其他产品在制备是存在的相容性差的问题，同时又提高了产品的耐高温性。

Description

一种纳米级电子芯片封装材料及制备方法
技术领域
本发明涉及一种纳米级电子芯片封装材料及制备方法。
背景技术
随着航空、航天、电子等高新技术的发展，高性能的封装材料需求量越来越大。尤其是在特殊应用环境下，人们对封装材料可操作性、机械加工性、耐高低温性能等都提出了更高的要求。目前市场上的耐高温高性能封装材料品种、质量都远远不能满足高技术领域发展的需要，制备过程中也存在相容性差等问题。
发明内容
本发明的目的在于提供一种纳米级电子芯片封装材料及制备方法，利用纳米级的环氧改性有机硅预聚物粒子与不同分子量的环氧预聚物，制备新型的封装材料，具有很好的兼容性的特点，制备新型的封装材料用于元器件封装的环氧树脂封装胶，具有抗光衰能力好，固化时间短，抗老化性能好，可操作时间长的特点。
为实现上述目的，本发明的技术方案是提供一种纳米级电子芯片封装材料及制备方法，具体步骤如下：
（1）、选取六甲基二硅氧烷和端乙烯基聚氧化乙烯，在氧化锰催化剂作用下通过硅氢化加成反应得到聚醚改性硅烷；
（2）、选取六甲基二硅氧烷和环氧己基乙烯，在氧化锰催化剂作用下反应得到环氧硅基烷；
（3）、将上述的合成聚醚改性硅烷和环氧硅基烷，加入二官能团硅烷和单官能团封头剂，在氨催化剂的作用下进行共水解，得到环氧改性有机硅预聚物纳米粒子；
（4）、选取丁烯二酸酐与二乙烯三胺按照4:3的比例混合，得到固化剂；
（5）、将上述得到的环氧改性有机硅预聚物纳米粒子、环氧预聚物、固化剂和促进剂按照8:3:1：1的比例混合，在70℃下均匀搅拌3小时即得到封装材料。
优选的，促进剂由环烷酸钴、四甲基硫脲按照5:2比例混合得到。
优选的，包括环氧预聚物、环氧改性有机硅预聚物纳米粒子、固化剂、促进剂 、其他助剂 ；各成分占比为15-65％：30-70％：5-25％：0-1％：0-1％。
本项目采用丁烯二酸酐与二乙烯三胺混合固化剂替代一般的多胺化合物固化剂，使环氧树脂和有机硅材料形成化学键连接在一起，形成网状结构，采用此种技术的产品避免了其他产品在制备是存在的相容性差的问题，同时又提高了产品的耐高温性。
具体实施方式
下面结合实施例，对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案，而不能以此来限制本发明的保护范围。
本发明具体实施的技术方案是：
实施例1：
选取六甲基二硅氧烷和端乙烯基聚氧化乙烯，在氧化锰催化剂作用下通过硅氢化加成反应得到聚醚改性硅烷；选取六甲基二硅氧烷和环氧己基乙烯，在氧化锰催化剂作用下反应得到环氧硅基烷；将上述的合成聚醚改性硅烷和环氧硅基烷，加入二官能团硅烷和单官能团封头剂，在氨催化剂的作用下进行共水解，得到环氧改性有机硅预聚物纳米粒子；选取丁烯二酸酐与二乙烯三胺按照4:3的比例混合，得到固化剂；将上述得到的环氧改性有机硅预聚物纳米粒子、环氧预聚物、固化剂和促进剂按照8:3:1：1的比例混合，在70℃下均匀搅拌3小时即得到封装材料。
实施例2：
选取六甲基二硅氧烷和端乙烯基聚氧化乙烯，在氧化锰催化剂作用下通过硅氢化加成反应得到聚醚改性硅烷；选取六甲基二硅氧烷和环氧己基乙烯，在氧化锰催化剂作用下反应得到环氧硅基烷；将上述的合成聚醚改性硅烷和环氧硅基烷，加入二官能团硅烷和单官能团封头剂，在氨催化剂的作用下进行共水解，得到环氧改性有机硅预聚物纳米粒子；选取丁烯二酸酐与二乙烯三胺按照5:2的比例混合，得到固化剂；将上述得到的环氧改性有机硅预聚物纳米粒子、环氧预聚物、固化剂和促进剂按照9:2:1：1的比例混合，在70℃下均匀搅拌3小时即得到封装材料。
实施例3：
选取六甲基二硅氧烷和端乙烯基聚氧化乙烯，在氧化锰催化剂作用下通过硅氢化加成反应得到聚醚改性硅烷；选取六甲基二硅氧烷和环氧己基乙烯，在氧化锰催化剂作用下反应得到环氧硅基烷；将上述的合成聚醚改性硅烷和环氧硅基烷，加入二官能团硅烷和单官能团封头剂，在氨催化剂的作用下进行共水解，得到环氧改性有机硅预聚物纳米粒子；选取丁烯二酸酐与二乙烯三胺按照6:5的比例混合，得到固化剂；将上述得到的环氧改性有机硅预聚物纳米粒子、环氧预聚物、固化剂和促进剂按照10:3:2：0.5的比例混合，在70℃下均匀搅拌3小时即得到封装材料。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (3)

1.一种纳米级电子芯片封装材料及制备方法，其特征在于，包括环氧预聚物、环氧改性有机硅预聚物纳米粒子、固化剂、促进剂 、其他助剂 ；各成分占比为15-65％：30-70％：5-25％：0-1％：0-1％。
2.根据权利要求1所述的纳米级电子芯片封装材料及制备方法，其特征在于，步骤为：
（1）、选取六甲基二硅氧烷和端乙烯基聚氧化乙烯，在氧化锰催化剂作用下通过硅氢化加成反应得到聚醚改性硅烷；
（2）、选取六甲基二硅氧烷和环氧己基乙烯，在氧化锰催化剂作用下反应得到环氧硅基烷；
（3）、将上述的合成聚醚改性硅烷和环氧硅基烷，加入二官能团硅烷和单官能团封头剂，在氨催化剂的作用下进行共水解，得到环氧改性有机硅预聚物纳米粒子；
（4）、选取丁烯二酸酐与二乙烯三胺按照4:3的比例混合，得到固化剂；
（5）、将上述得到的环氧改性有机硅预聚物纳米粒子、环氧预聚物、固化剂和促进剂按照8:3:1：1的比例混合，在70℃下均匀搅拌3小时即得到封装材料。
3.根据权利要求1所述的纳米级电子芯片封装材料及制备方法，其特征在于，所述促进剂由环烷酸钴、四甲基硫脲按照5:2比例混合得到。
CN201611223143.4A 2016-12-27 2016-12-27 一种纳米级电子芯片封装材料及制备方法 Pending CN106751915A (zh)

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