CN106744727B - The preparation method of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet - Google Patents

The preparation method of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet Download PDF

Info

Publication number
CN106744727B
CN106744727B CN201611062238.2A CN201611062238A CN106744727B CN 106744727 B CN106744727 B CN 106744727B CN 201611062238 A CN201611062238 A CN 201611062238A CN 106744727 B CN106744727 B CN 106744727B
Authority
CN
China
Prior art keywords
nanometer sheet
stannic selenide
selenide nanometer
spiral type
screw dislocation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201611062238.2A
Other languages
Chinese (zh)
Other versions
CN106744727A (en
Inventor
刘金养
黄青青
徐杨阳
钱永强
林丽梅
黄志高
赖***
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujian Normal University
Original Assignee
Fujian Normal University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujian Normal University filed Critical Fujian Normal University
Priority to CN201611062238.2A priority Critical patent/CN106744727B/en
Publication of CN106744727A publication Critical patent/CN106744727A/en
Application granted granted Critical
Publication of CN106744727B publication Critical patent/CN106744727B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
    • C01B19/007Tellurides or selenides of metals
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/80Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/80Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/80Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/01Particle morphology depicted by an image
    • C01P2004/03Particle morphology depicted by an image obtained by SEM
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/01Particle morphology depicted by an image
    • C01P2004/04Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/20Particle morphology extending in two dimensions, e.g. plate-like
    • C01P2004/22Particle morphology extending in two dimensions, e.g. plate-like with a polygonal circumferential shape

Abstract

The invention discloses a kind of preparation methods of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet, screw type stratiform stannic selenide nanometer sheet is prepared using the technology path of solvent method, stannic selenide nanometer sheet is controlled by controlling the concentration of precursor liquid and is driven with screw dislocation grows, this method is easy to operate, at low cost, and obtained screw type stratiform stannic selenide nanometer sheet has the helical periodicity of atomic-level thickness.

Description

The preparation method of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet
Technical field
The present invention relates to stannic selenide nanometer sheet preparation field, especially a kind of screw dislocation drives growth spiral type stratiform selenium Change the preparation method of tin nanometer sheet.
Background technique
The two-dimensional material of atomic-level thickness include graphene, boron nitride and transient metal sulfide etc. all show with The different new features of its block materials, make its electronic device, in terms of there are good application prospects.So And the controllable two-dimensional material such as exact growth thickness, size, structure, symmetry and ingredient still has important choose at present War.The p-type semiconductor material for the narrow band gap that stannic selenide is abundant as a kind of storage, toxicity is low, chemical stability is good, in solar energy There is good application prospect in battery, photodetector and near infrared light electric equipment.So far, by chemical method by selenizing A series of stannic selenide nanostructures such as tin nanoflower, nanometer sheet and nano wire have all been synthesized;However, some unique The screw type stratiform stannic selenide nanometer sheet of nanostructure such as atomic-level thickness is but seldom studied.
Summary of the invention
In order to solve the deficiencies in the prior art, the present invention for two-dimensional material thickness, size, structure, symmetry and at Divide the status for being difficult to regulate and control, a kind of reliable effective, simple screw dislocation driving growth spiral type stratiform stannic selenide of regulation is provided The preparation method of nanometer sheet.
In order to realize above-mentioned technical purpose, the technical solution of the present invention is as follows:
The preparation method of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet comprising following steps:
1) stannous chloride that at room temperature, configuration concentration is 0.4~1.0mmol/L, concentration are 0.4~1.0mmol/ The selenium dioxide and concentration of L is the benzyl alcohol solution of the polyvinylpyrrolidone of 160~400g/L, and is uniformly mixed;
2) solution after mixing is transferred in three neck round bottom and is sealed and stirs, and be slowly introducing protection Gas;
3) in protective gas atmosphere, solution is heated to 190~210 DEG C, and constant temperature keeps 12~18h;
4) by after solution cooled to room temperature, 8~12min of centrifugation, gained are carried out under the revolving speed of 900~1100rpm It is centrifuged product and carries out washing filtering with dehydrated alcohol, and be stored in ethanol solution, obtain screw dislocation driving growth Screw type stratiform stannic selenide nanometer sheet.
Further, the concentration of stannous chloride is 0.8mmol/L in the step 1), and the concentration of selenium dioxide is 0.8mmol/ L, the concentration of polyvinylpyrrolidone are 320g/L.
Further, stannous chloride, selenium dioxide and polyvinylpyrrolidone press 1mmol/L:1 in the step 1) The ratio of mmol/L:400g/L is uniformly mixed.
Further, the protective gas of the step 2 and step 3) is nitrogen, helium or argon gas.
Further, for the step 3) in protective gas atmosphere, solution is heated to 200 DEG C.
Further, the driving of screw dislocation made from step 4) growth spiral type stratiform stannic selenide nanometer sheet has atom The helical periodicity of grade thickness.
Further, the conveyor screw of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet is by more than one Rectangle stannic selenide nanometer sheet composition interconnected, the rectangle stannic selenide nanometer sheet area interconnected sequentially successively decrease.
By using above-mentioned technical solution, the invention has the benefit that being prepared using the technology path of solvent method Screw type stratiform stannic selenide nanometer sheet controls stannic selenide nanometer sheet by controlling the concentration of precursor liquid with screw dislocation and drives life Long, this method is easy to operate, at low cost, and obtained screw type stratiform stannic selenide nanometer sheet has the spiral week of atomic-level thickness Phase property.
Detailed description of the invention
The present invention is further elaborated with reference to the accompanying drawings and detailed description:
Fig. 1 is the low power scanning electron microscope (SEM) photograph of screw type stratiform stannic selenide nanometer sheet of the present invention;
Fig. 2 is scanning electron microscope (SEM) photograph of the place (b) after magnification at high multiple in Fig. 1;
Fig. 3 is the atomic force microscope shape appearance figure of the place (b) screw type stratiform stannic selenide nanometer sheet in Fig. 1;
Fig. 4 is the cross sectional view in Fig. 3 at dotted line, and internal small figure is the structural representation of screw type stratiform stannic selenide nanometer sheet Figure;
Fig. 5 is the X-ray diffractogram of screw type stratiform stannic selenide nanometer sheet of the present invention;
Fig. 6 is the transmission electron microscope picture of screw type stratiform stannic selenide nanometer sheet of the present invention;
Fig. 7 is tin element image corresponding in Fig. 6;
Fig. 8 is selenium element image corresponding in Fig. 6;
Fig. 9 is the electronic capability dispersion map of screw type stratiform stannic selenide nanometer sheet;
Figure 10 is the high resolution transmission electron microscope figure of screw type stratiform stannic selenide nanometer sheet;
Figure 11 is the electron diffraction diagram of screw type stratiform stannic selenide nanometer sheet;
Figure 12 is the transmission electron microscope picture at screw type stratiform stannic selenide nanometer sheet center in Fig. 6;
Figure 13 is the abosrption spectrogram of screw type stratiform stannic selenide nanometer sheet;
Figure 14 is the Raman spectrogram of screw type stratiform stannic selenide nanometer sheet.
Specific embodiment
The preparation method of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet comprising following steps:
1) stannous chloride that at room temperature, configuration concentration is 0.4~1.0mmol/L, concentration are 0.4~1.0mmol/ The selenium dioxide and concentration of L is the benzyl alcohol solution of the polyvinylpyrrolidone of 160~400g/L, and is uniformly mixed;
2) solution after mixing is transferred in three neck round bottom and is sealed and stirs, and be slowly introducing protection Gas;
3) in protective gas atmosphere, solution is heated to 190~210 DEG C, and constant temperature keeps 12~18h;
4) by after solution cooled to room temperature, 12~18min of centrifugation, gained are carried out under the revolving speed of 900~1100rpm It is centrifuged product and carries out washing filtering with dehydrated alcohol, and be stored in ethanol solution, obtain screw dislocation driving growth Screw type stratiform stannic selenide nanometer sheet.
Further, the concentration of stannous chloride is 0.8mmol/L in the step 1), and the concentration of selenium dioxide is 0.8mmol/ L, the concentration of polyvinylpyrrolidone are 320g/L.
Further, stannous chloride, selenium dioxide and polyvinylpyrrolidone press 1mmol/L:1 in the step 1) The ratio of mmol/L:400g/L is uniformly mixed.
Further, the protective gas of the step 2 and step 3) is nitrogen, helium or argon gas.
Further, for the step 3) in protective gas atmosphere, solution is heated to 200 DEG C.
Further, the driving of screw dislocation made from step 4) growth spiral type stratiform stannic selenide nanometer sheet has atom The helical periodicity of grade thickness.
Further, the conveyor screw of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet is by more than one Rectangle stannic selenide nanometer sheet composition interconnected, the rectangle stannic selenide nanometer sheet area interconnected sequentially successively decrease.
Embodiment 1
A kind of preparation method of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet comprising following steps:
1) titanium dioxide that stannous chloride that at room temperature, configuration concentration is 0.8mmol/L, concentration are 0.8mmol/L Selenium, the polyvinylpyrrolidone that concentration is 320g/L, ratio are the benzyl alcohol solution of 1mmol/L:1 mmol/L:400g/L, and It is uniformly mixed;
2) solution after mixing is transferred in three neck round bottom and is sealed and stirs, and be slowly introducing nitrogen Gas;
3) in nitrogen atmosphere, solution is heated to 200 DEG C, and constant temperature keeps 12h;
4) centrifugation 10min after solution cooled to room temperature, will be carried out under the revolving speed of 1000rpm, gained is centrifuged product Washing filtering is carried out with dehydrated alcohol, and is stored in ethanol solution, the spiralization cycle with atomic-level thickness is obtained Property screw dislocation drive growth spiral type stratiform stannic selenide nanometer sheet, the screw type of the described screw dislocation growth driving growth The conveyor screw of stratiform stannic selenide nanometer sheet is made of more than one rectangle stannic selenide nanometer sheet interconnected, wherein being connected with each other The area of rectangle stannic selenide nanometer sheet sequentially successively decrease.
Embodiment 2
A kind of preparation method of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet comprising following steps:
1) titanium dioxide that stannous chloride that at room temperature, configuration concentration is 0.4mmol/L, concentration are 0.4mmol/L Selenium, the polyvinylpyrrolidone that concentration is 160g/L, ratio are the benzyl alcohol solution of 1mmol/L:1 mmol/L:400g/L, and It is uniformly mixed;
2) solution after mixing is transferred in three neck round bottom and is sealed and stirs, and be slowly introducing argon Gas;
3) in argon atmosphere, solution is heated to 210 DEG C, and constant temperature keeps 18h;
4) centrifugation 12min after solution cooled to room temperature, will be carried out under the revolving speed of 900rpm, gained is centrifuged product and uses Dehydrated alcohol carries out washing filtering, and is stored in ethanol solution, obtains the helical periodicity with atomic-level thickness Screw dislocation drive growth spiral type stratiform stannic selenide nanometer sheet, the screw type layer of the described screw dislocation growth driving growth The conveyor screw of shape stannic selenide nanometer sheet is made of more than one rectangle stannic selenide nanometer sheet interconnected, wherein interconnected The area of rectangle stannic selenide nanometer sheet sequentially successively decreases.
Embodiment 3
A kind of preparation method of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet comprising following steps:
1) titanium dioxide that stannous chloride that at room temperature, configuration concentration is 1.0mmol/L, concentration are 1.0mmol/L Selenium, the polyvinylpyrrolidone that concentration is 400g/L, ratio are the benzyl alcohol solution of 1mmol/L:1 mmol/L:400g/L, and It is uniformly mixed;
2) solution after mixing is transferred in three neck round bottom and is sealed and stirs, and be slowly introducing helium Gas;
3) in helium atmosphere, solution is heated to 190 DEG C, and constant temperature keeps 16h;
4) centrifugation 8min after solution cooled to room temperature, will be carried out under the revolving speed of 1100rpm, gained is centrifuged product and uses Dehydrated alcohol carries out washing filtering, and is stored in ethanol solution, obtains the helical periodicity with atomic-level thickness Screw dislocation drive growth spiral type stratiform stannic selenide nanometer sheet, the screw type layer of the described screw dislocation growth driving growth The conveyor screw of shape stannic selenide nanometer sheet is made of more than one rectangle stannic selenide nanometer sheet interconnected, wherein interconnected The area of rectangle stannic selenide nanometer sheet sequentially successively decreases.
The above is the embodiment of the present invention, for the ordinary skill in the art, religion according to the present invention Lead, without departing from the principles and spirit of the present invention all equivalent changes done according to scope of the present invention patent, repair Change, replacement and variant, is all covered by the present invention.

Claims (6)

1. a kind of preparation method of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet, it is characterised in that: it includes Following steps:
1) stannous chloride that at room temperature, configuration concentration is 0.4~1.0mmol/L, concentration are 0.4~1.0mmol/L's The benzyl alcohol solution for the polyvinylpyrrolidone that selenium dioxide and concentration are 160~400g/L, and be uniformly mixed;
2) solution after mixing is transferred in three neck round bottom and is sealed and stirs, and be slowly introducing protection gas Body;
3) in protective gas atmosphere, solution is heated to 190~210 DEG C, and constant temperature keeps 12~18h;
4) 8~12min of centrifugation, gained centrifugation after solution cooled to room temperature, will be carried out under the revolving speed of 900~1100rpm Product carries out washing filtering with dehydrated alcohol, and is stored in ethanol solution, obtains screw dislocation driving growth spiral Type stratiform stannic selenide nanometer sheet, the conveyor screw of the screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet is by one The above rectangle stannic selenide nanometer sheet composition interconnected, the rectangle stannic selenide nanometer sheet area interconnected are sequentially passed Subtract.
2. a kind of preparation side of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet according to claim 1 Method, it is characterised in that: the concentration of stannous chloride is 0.8mmol/L in the step 1), and the concentration of selenium dioxide is 0.8mmol/ L, the concentration of polyvinylpyrrolidone are 320g/L.
3. a kind of preparation side of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet according to claim 1 Method, it is characterised in that: stannous chloride, selenium dioxide and polyvinylpyrrolidone are by concentration ratio in the step 1) The ratio of 1mmol/L:1 mmol/L:400g/L is uniformly mixed with benzyl alcohol solution.
4. a kind of preparation side of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet according to claim 1 Method, it is characterised in that: the protective gas of the step 2 and step 3) is nitrogen, helium or argon gas.
5. a kind of preparation side of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet according to claim 1 Method, it is characterised in that: for the step 3) in protective gas atmosphere, solution is heated to 200 DEG C.
6. a kind of preparation side of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet according to claim 1 Method, it is characterised in that: screw dislocation made from the step 4) drives growth spiral type stratiform stannic selenide nanometer sheet to have atom The helical periodicity of grade thickness.
CN201611062238.2A 2016-11-28 2016-11-28 The preparation method of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet Active CN106744727B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201611062238.2A CN106744727B (en) 2016-11-28 2016-11-28 The preparation method of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201611062238.2A CN106744727B (en) 2016-11-28 2016-11-28 The preparation method of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet

Publications (2)

Publication Number Publication Date
CN106744727A CN106744727A (en) 2017-05-31
CN106744727B true CN106744727B (en) 2019-02-01

Family

ID=58913347

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201611062238.2A Active CN106744727B (en) 2016-11-28 2016-11-28 The preparation method of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet

Country Status (1)

Country Link
CN (1) CN106744727B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110240126B (en) * 2019-06-14 2021-01-19 西安交通大学 Tin diselenide with nanoflower structure and preparation method thereof
CN115970758B (en) * 2022-10-19 2023-12-15 江苏大学 Preparation method and application of nano piezoelectric catalytic material coated by metal organic framework

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101214932A (en) * 2008-01-08 2008-07-09 上海大学 Method for preparing nanometer tin selenide
CN101412505B (en) * 2008-09-05 2010-06-02 山东建筑大学 Preparation of high-purity tin diselenide nano-plate
CN102603202A (en) * 2012-03-12 2012-07-25 山东建筑大学 Method for preparing tin selenide photoelectric thin film
CN102897724B (en) * 2012-09-06 2014-08-20 江苏大学 Tin selenide nano-flowers and preparation method thereof
CN104692343B (en) * 2015-03-17 2017-01-25 福州大学 Tin selenide nano material, preparation method and application thereof
CN104831362A (en) * 2015-06-08 2015-08-12 广东工业大学 Method for preparing tin selenide single-crystal nano-belt
CN105565284B (en) * 2016-03-04 2018-01-16 山东科技大学 A kind of orientationization sheet SnSe raw powder's production technologies

Also Published As

Publication number Publication date
CN106744727A (en) 2017-05-31

Similar Documents

Publication Publication Date Title
Kamble et al. Synthesis of Cu2NiSnS4 nanoparticles by hot injection method for photovoltaic applications
Cheng et al. A controlled anion exchange strategy to synthesize Bi 2 S 3 nanocrystals/BiOCl hybrid architectures with efficient visible light photoactivity
Bonabi Naghadeh et al. Photophysical properties and improved stability of organic–inorganic perovskite by surface passivation
Etgar et al. High efficiency quantum dot heterojunction solar cell using anatase (001) TiO2 nanosheets
Wang et al. Flower-like Cu2NiSnS4 nanoparticles synthesized by a facile solvothermal method
Liu et al. Facile synthesis of ultrafine Cu2ZnSnS4 nanocrystals by hydrothermal method for use in solar cells
Tavakoli et al. Green synthesis of flower-like CuI microstructures composed of trigonal nanostructures using pomegranate juice
Chen et al. Highly luminescent CsPbX3 (X= Cl, Br, I) perovskite nanocrystals with tunable photoluminescence properties
Peng et al. Synthesis of AgInS 2 nanocrystal ink and its photoelectrical application
Zheng et al. PEG induced tunable morphology and band gap of ZnO
Hai et al. Synthesis of SnS2 nanocrystals via a solvothermal process
Mousavi-Kamazani et al. Facile hydrothermal synthesis, formation mechanism and solar cell application of CuInS2 nanoparticles using novel starting reagents
Yang et al. Building bridges between halide perovskite nanocrystals and thin-film solar cells
Carter et al. Cu2ZnSn (S, Se) 4 solar cells from inks of heterogeneous Cu–Zn–Sn–S nanocrystals
Du et al. Solvothermal synthesis and characterization of quaternary Cu2ZnSnSe4 particles
CN106744727B (en) The preparation method of screw dislocation driving growth spiral type stratiform stannic selenide nanometer sheet
Yao et al. Improved stability of depletion heterojunction solar cells employing cation-exchange PbS quantum dots
Wang et al. Rapid synthesis of hollow CTS nanoparticles using microwave irradiation
CN106753357B (en) Preparation method of PbS quantum dots
Zhong et al. Hybrid bulk heterojunction solar cells based on poly (3-hexylthiophene) and Z907-modified ZnO nanorods
Turnley et al. Solution deposition for chalcogenide perovskites: a low-temperature route to BaMS3 materials (M= Ti, Zr, Hf)
Wang et al. Effects of sulfur sources on properties of Cu 2 ZnSnS 4 nanoparticles
Wang et al. Incorporation of Rb cations into Cu2FeSnS4 thin films improves structure and morphology
Qi et al. Growth of flower-like SnO2 crystal and performance as photoanode in dye-sensitized solar cells
Ozel et al. Electrospinning of Cu2ZnSnSe4-xSx nanofibers by using PAN as template

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant