CN106711164A - Indirect heating type microwave signal detector for clamped beam - Google Patents
Indirect heating type microwave signal detector for clamped beam Download PDFInfo
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- CN106711164A CN106711164A CN201710052698.5A CN201710052698A CN106711164A CN 106711164 A CN106711164 A CN 106711164A CN 201710052698 A CN201710052698 A CN 201710052698A CN 106711164 A CN106711164 A CN 106711164A
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Abstract
The invention relates to an indirect heating type microwave signal detector for a clamped beam. The detector comprises a six-port clamped beam coupler, a channel selection switch, a microwave frequency detector and a microwave phase detector, wherein the six-port clamped beam coupler is composed of a coplanar waveguide, a dielectric layer, an air layer and the clamped beam; the power coupling degrees from a first port to a third port and a fourth port of the six-port clamped beam coupler are identical to each other, and the power coupling degrees from the first port to a fifth port and a sixth port are identical to each other; a to-be-detected signal is input from the first port, is output to an indirect heating type microwave power detector from the second port, is output to an indirect heating type microwave phase detector from the fourth port and the sixth port and is output to the channel selection switch from the third port and the fifth port; a seventh port and an eighth port of the channel selection switch are connected with the indirect heating type microwave power detector; a ninth port and a tenth port of the channel selection switch are connected with the microwave frequency detector; and finally, three microwave parameters, including power, phase and frequency, of the microwave signal can be simultaneously detected by one chip.
Description
Technical field
The present invention proposes clamped beam indirect heating type microwave signal detector, belongs to the technology neck of microelectromechanical systems
Domain.
Background technology
The parameters such as amplitude, power, the frequency of microwave signal are traditional measurement parameters.Microwave signal phase measurement not only with
Power measurement is related, and itself also occupies highly important status in microwave measurement.With the increase of frequency, signal
Wavelength is progressively approached with various component sizes in circuit, and voltage, electric current exist all in the form of ripple in circuit, the phase of signal
Postpone to cause that not only the voltage of various location, electric current are different in synchronization amplitude in circuit, and at same position
Voltage, electric current also not different in the same time.Therefore grasped in microwave frequency band and the phase of control signal is necessary
, the phase of microwave signal is also just into an important measurement parameter.The present invention is single based on Si technological design one kind
Chip realizes detection microwave power, phase, the clamped beam indirect heating type microwave signal detector of frequency simultaneously.
The content of the invention
Technical problem：It is an object of the invention to provide a kind of clamped beam indirect heating type microwave signal detector, using six
Port clamped beam Coupler ports are come the detection functional module that is of coupled connections different, it is achieved thereby that a chip is simultaneously to microwave
The power of signal, phase, three kinds of detections of microwave parameter of frequency, the benefit with low-power consumption, low cost.
Technical scheme：Clamped beam indirect heating type microwave signal detector of the invention by six port clamped beam couplers,
Channel selector switch, microwave frequency detector, microwave phase detector device composition；
The first port of six port clamped beam couplers is to the 3rd port, the 4th port and first port to the 5th end
Mouth, the power degree of coupling of the 6th port distinguish identical, and measured signal is input into through first port, by second port output to first
Heated microwave power detector is connect, the first of microwave phase detector device is respectively outputted to by the 4th port and the 6th port
Wilkinson power combiners and the 2nd Wilkinson power combiners, and by a Wilkinson power combiners and
Two Wilkinson power combiners connect the second indirect heating type microwave power detector and the inspection of the 3rd indirect heating type microwave power
Survey device；Connect to the 7th port of channel selector switch channel selector switch and the 8th port by the 3rd port and fifth port output
Second indirect heating type microwave power detector and the 3rd indirect heating type microwave power detector, the 9th of channel selector switch the
Port and the tenth port connect the 3rd Wilkinson power combiners of microwave frequency detector, are closed by the 3rd Wilkinson power
Grow up to be a useful person and connect the 5th indirect heating type microwave power detector, it is achieved thereby that to microwave signal power, phase, frequency detection.
Wherein, six port clamped beam couplers are by co-planar waveguide, dielectric layer, air layer and across clamped beam structure above it
Into；Co-planar waveguide is produced on SiO2On layer, anchor area is produced on co-planar waveguide, the lower section metallization medium layer of clamped beam, and with sky
Gas-bearing formation, clamped beam collectively form coupled capacitor structure, and the co-planar waveguide length between two clamped beams is λ/4；
Beneficial effect：
1) clamped beam indirect heating type microwave signal detector of the invention is by the power of microwave signal, phase, frequency three
Plant survey module to be integrated together, input signal to different detection work(is coupled using the clamped beam of six port clamped beam couplers
Can module, realize a chip simultaneously to the power of microwave signal, phase, three kinds of detections of microwave parameter of frequency, with low
The benefit of power consumption, low cost；
2) clamped beam indirect heating type microwave signal detector application indirect heating type microwave power detector of the invention
The power of microwave signal is detected, with preferable microwave property and without DC power；
3) the two Wilkinson power combiners of microwave phase detector module application in the present invention, a Wilkinson
Power divider and two indirect heating type microwave power detectors realize 0-360 ° of phase-detection.
Brief description of the drawings
Fig. 1 is the theory diagram of clamped beam indirect heating type microwave signal detector of the present invention,
Fig. 2 is the top view of six port clamped beam couplers,
Fig. 3 is AA ' the directional profile figures of the port clamped beam couplers of Fig. 2 six,
Fig. 4 is the top view of channel selector switch,
Fig. 5 is AA ' the directional profile figures of Fig. 4 channel selector switch,
Fig. 6 is the top view of Wilkinson power divider/synthesizers,
Fig. 7 is the top view of indirect heating type microwave power detector,
Fig. 8 is AA ' the directional profile figures of Fig. 7 indirect heating type microwave power detectors.
Figure includes：Six port clamped beam couplers 1, channel selector switch 2, microwave frequency detector, 3, microwave phase
Detector 4, the first indirect heating type microwave power detector 5-1, the second indirect heating type microwave power detector 5-2, the 3rd
Indirect heating type microwave power detector 5-3, the 4th indirect heating type microwave power detector 5-4, the 5th indirectly heat declines
Wave power sensor 5-5, the 6th indirect heating type microwave power detector 5-6, a Wilkinson power combiner 6-1, the
Two Wilkinson power combiners 6-2, the 3rd Wilkinson power combiner 6-3, Wilkinson power divider 7, Si linings
Bottom 8, SiO2Layer 9, co-planar waveguide 10, anchor area 11, dielectric layer 12, clamped beam 13, cantilever beam 14, air layer 15, air bridges 16 are non-
Symmetrical coplanar striplines 17, isolation resistance 18, terminal resistance 19, P-type semiconductor arm 20, N-type semiconductor arm 21, output electrode 22,
Hot junction 23, cold end 24, substrate film structure 25, pull-down electrode 26, first port 1-1, second port 1-2, the 3rd port 1-3,
4th port 1-4, fifth port 1-5, the 6th port 1-6, the 7th port 2-1, the 8th port 2-2, the 9th port 2-3, the tenth
Port 2-4, the tenth Single port 6-1, the tenth Two-port netwerk 6-2, the 13rd port 6-3.
Specific embodiment
Clamped beam indirect heating type microwave signal detector of the present invention by six port clamped beam couplers 1, open by channel selecting
2 are closed, microwave frequency detector 3, the cascade of microwave phase detector device 4 is constituted；Six port clamped beam couplers 1 by co-planar waveguide 10,
Dielectric layer 12, air layer 15 and clamped beam 13 are constituted；Co-planar waveguide 10 is produced on SiO2On layer 9, the anchor area 11 of clamped beam 13 makes
Make on co-planar waveguide 10, the lower section deposition of clamped beam 13 has dielectric layer 12, and collectively forms coupling with air layer 15, clamped beam 13
Capacitance structure is closed, the length of co-planar waveguide 10 between two clamped beams 13 is λ/4；Channel selector switch 2 is by co-planar waveguide 10, anchor
Area 11, dielectric layer 12, cantilever beam 14, pull-down electrode 26 is constituted；The anchor area 11 of cantilever beam 14 is produced on co-planar waveguide 10, cantilever
The lower section of beam 14 makes pull-down electrode 26, and collectively forms construction of switch with the upper dielectric layer 12 of pull-down electrode 26；Microwave frequency is examined
Device 3 is surveyed to be made up of the 3rd Wilkinson power combiners 6-3 and the 6th indirect heating type microwave power detector 5-6 cascades；It is micro-
Wave phase detector 4 is by the 4th indirect heating type microwave power detector 5-4, the 5th indirect heating type microwave power detector 5-
5, a Wilkinson power combiner 6-1, the 2nd Wilkinson power combiner 6-2, Wilkinson power divider 7
Constitute；Wilkinson power combiners, the topological structure of Wilkinson power dividers is identical, by co-planar waveguide 10, non-right
Coplanar striplines 17 and air bridges 15, isolation resistance 18 is claimed to constitute, it is Wilkinson power that signal is input into from the tenth Single port 6-1
Distributor, from the tenth Two-port netwerk 6-2, it is Wilkinson power combiners that the 13rd port 6-3 is input into signal；
The port 1-3 of first port 1-1 to the 3rd, the 4th port 1-4 and first port of six port clamped beam couplers 1
1-1 to fifth port 1-5, the power degree of coupling of the 6th port 1-6 distinguish identical；Measured signal is through six port clamped beam couplers
1 first port 1-1 inputs, by second port 1-2 outputs to the first indirect heating type microwave power detector 5-1, by the 4th
Port 1-4 and the 6th port 1-6 outputs to microwave phase detector device 4, by the 3rd port 1-3 and fifth port 1-5 outputs to leading to
Road selecting switch 2；7th port 2-1 of channel selector switch 2 and the 8th port 2-2 connect the second indirectly heat type micro-wave work(respectively
Rate sensor 5-2, the 3rd indirect heating type microwave power detector 5-3, the 9th port 2-3 of channel selector switch 2 and the tenth
Port 2-4 connects microwave frequency detector 3, realizes a chip simultaneously to power, phase, three kinds of microwaves of frequency of microwave signal
The detection of parameter, the benefit with low-power consumption, low cost.Its microwave power, phase, the Cleaning Principle of frequency can be explained such as
Under：
Power detection：Microwave power as shown in Figure 7 is input into from input port, and terminal resistance is input to by co-planar waveguide 10
19 are converted to heat；P-type semiconductor arm 20 and N-type semiconductor arm 21 constitute thermocouple, and thermocouple is near the area of terminal resistance 19
Used as hot junction 23, thermocouple is near the region of output electrode 22 as cold end 24 in domain；According to Seebeck effects, exported by measuring
The thermoelectrical potential of electrode 22 understands input microwave power size；Substrate thinning is constituted substrate film knot by the back of hot junction 23 of thermocouple
Structure 25 is improving detection sensitivity.
Frequency detecting：Threeth port 1-3 and fiveth end of the microwave signal as shown in Figure 1 through six port clamped beam couplers 1
Channel selector switch 2 is arrived in mouth 1-5 outputs；7th port 2-1 of channel selector switch 2 and the 8th port 2-2 connect between second respectively
Meet heated microwave power sensor 5-2, the 3rd indirect heating type microwave power detector 5-3, the 9th of channel selector switch 2 the
Port 2-3 and the tenth port 2-4 connect microwave frequency detector 3；The cantilever beam 14 of channel selector switch 2 is grounded, pull-down electrode 26
Driving voltage is connect, when driving voltage is more than or equal to cut-in voltage, cantilever beam 14 is pulled down into, and passage is strobed；Work as channel selecting
The 7th port 2-1 and the 8th port 2-2 of switch 2 be when being strobed, and can test out the output coupling of six port clamped beam couplers 1
Close power P3And P5.The length of co-planar waveguide 10 between two clamped beams 13 of six port clamped beam couplers 1 is λ/4, now the
The phase difference of three port 1-3 and fifth port 1-5 is 90 °, and the phase difference as shown in formula (1) is the linear function of frequency.
λ is the wavelength for being input into microwave signal, and c is the light velocity, εerFor effective dielectric constant is only relevant with structure.Work as channel selecting
When the 9th port 2-3 and the tenth port 2-4 of switch 2 are strobed, two way microwave signals are by the 3rd Wilkinson power combings
Device 6-3 carries out power combing, and the 6th indirect heating type microwave power detector 5-6 of application detects composite signal power PsGreatly
It is small, the frequency of input microwave signal can be drawn according to formula (2).
P3, P5It is the power that the 3rd port 1-3 is coupled with fifth port 1-5, can be passed by the second indirect heating type microwave power
Sensor 5-2 and the 3rd indirect heating type microwave power detector 5-3 detections are obtained.
Phase detectors：Microwave signal as shown in Figure 1 through six port clamped beam couplers 1 the 4th port 1-4 and the 6th
Port 1-6 is input to microwave phase detector device 4 and carries out phase-detection；Two clamped beams 13 of six port clamped beam couplers 1 it
Between the length of co-planar waveguide 10 be λ/4, now by the two way microwave signals phase difference of the 4th port 1-4 and the 6th port 1-6
It is 90 °；Input power Pr, the reference signal of f (microwave frequency detector 3 is measured) identical with measured signal frequency, reference signal
It is divided into two-way power and phase identical signal through Wilkinson power dividers 7, with the 4th port 1-4 and the 6th port 1-6
Two-way measured signal carry out work(through a Wilkinson power combiners 6-1 and the 2nd Wilkinson power combiners 6-2
Rate synthesizes；4th indirect heating type microwave power detector 5-4 and the 5th indirect heating type microwave power detector 5-5 is to left and right
Power P after two-way synthesiscs1, Pcs2Detected, and the phase difference and reference signal between to be measured is drawn by formula (3)
P4, P6It is the power that the 4th port 1-4 is coupled with the 6th port 1-6, and P4=P3, P6=P5。
The preparation method of clamped beam indirect heating type microwave signal detector includes following steps：
1) 4 inches of high resistant Si substrates 8 are prepared, resistivity is 4000 Ω cm, and thickness is 400mm；
2) thermally grown a layer thickness is the SiO of 1.2mm2Layer 9；
3) chemical vapor deposition (CVD) grows one layer of polysilicon, and thickness is 0.4mm；
4) one layer of photoresist and photoetching are coated, in addition to polysilicon resistance region, other regions are photo-etched glue protection, and note
Enter phosphorus (P) ion, doping concentration is 1015cm-2, form isolation resistance 18 and terminal resistance 19；
5) one layer of photoresist is coated, P is used+Photolithography plate carries out photoetching, in addition to the region of P-type semiconductor arm 20, other regions
Glue protection is photo-etched, boron (B) ion is then poured into, doping concentration is 1016cm-2, form the P-type semiconductor arm 20 of thermocouple；
6) one layer of photoresist is coated, N is used+Photolithography plate carries out photoetching, in addition to the region of N-type semiconductor arm 21, other regions
Glue protection is photo-etched, phosphorus (P) ion is then poured into, doping concentration is 1016cm-2, form the N-type semiconductor arm 21 of thermocouple；
7) one layer of photoresist, photoetching thermoelectric pile and polysilicon resistance figure are coated, then thermocouple is formed by dry etching
Arm and polysilicon resistance；
8) one layer of photoresist, photoetching removal co-planar waveguide 10, asymmetrical coplanar stripline 17, metal interconnecting wires output electricity are coated
Photoresist at pole 22 and pull-down electrode 26；
9) electron beam evaporation (EBE) forms ground floor gold (Au), and thickness is 0.3mm, on removal photoresist and photoresist
Au, stripping forms ground floor Au, output electrode 22, the thermoelectric pile metal interconnecting wires of co-planar waveguide 10 and asymmetric coplanar strip 17
And pull-down electrode 26；
10) (LPCVD) one layer of Si is deposited3N4, thickness is 0.1mm；
11) one layer of photoresist is coated, photoetching simultaneously retains the photoresist below clamped beam 13 and cantilever beam 14, dry etching
Si3N4, form dielectric layer 12；
12) one layer of air of uniform coating layer 15 and litho pattern, thickness is 2mm, is retained under clamped beam 13 and cantilever beam 14
The polyimides of side is used as sacrifice layer；
13) photoresist is coated, it is photoetching removal clamped beam 13, cantilever beam 14, anchor area 11, co-planar waveguide 10, asymmetric coplanar
Photoresist with line 17 and the position of output electrode 22；
14) Seed Layer of 500/1500/300A ° of Ti/Au/Ti, the thickness of re-plating one after Ti layers at the top of removal are evaporated
Spend is Au layers of 2mm；
15) Au on photoresist and photoresist is removed, clamped beam 13, cantilever beam 14, anchor area 11, co-planar waveguide is formed
10th, asymmetrical coplanar stripline 17 and output electrode 22；
16) deep reaction ion etching (DRIE) the backing material back side, makes membrane structure 25；
17) polyimide sacrificial layer is discharged：Developer solution soaks, the polyimide sacrificial layer under removal clamped beam, deionization
Water soaks slightly, absolute ethyl alcohol dehydration, is volatilized under normal temperature, dries.
Difference with the prior art of the present invention is：
Present invention employs six novel port clamped beam coupled structures, this clamped beam coupled structure is from co-planar waveguide
A part is coupled out in the microwave signal of transmission, and power, frequency and the phase of microwave signal are detected using the signal being coupled out
Position size application indirect heating type microwave power detector detects the power of microwave signal, with preferable microwave property and nothing
DC power；Clamped beam indirect heating type microwave signal detector of the invention realizes a chip simultaneously to microwave signal
Power, phase, three kinds of detections of microwave parameter of frequency, the benefit with low-power consumption, low cost
The structure for meeting conditions above is considered as clamped beam indirect heating type microwave signal detector of the invention.
Claims (3)
1. a kind of clamped beam indirect heating type microwave signal detector, it is characterised in that the phase detectors are by six port clamped beams
Coupler (1), channel selector switch (2), microwave frequency detector (3) and microwave phase detector device (4) cascade are constituted；Six ports
The first port of clamped beam coupler (1) is to the 3rd port, the 4th port and first port to fifth port, the 6th port
Power degree of coupling difference is identical, and measured signal is input into through first port (1-1), exports indirect to first by second port (1-2)
Heated microwave power detector (5-1), is respectively outputted to microwave phase and examines by the 4th port (1-4) and the 6th port (1-6)
A Wilkinson power combiners (6-1) and the 2nd Wilkinson power combiners (6-2) of device (4) are surveyed, and by first
Wilkinson power combiners (6-1) and the 2nd Wilkinson power combiners (6-2) connect the second indirectly heat type micro-wave work(
Rate detector (5-2) and the 3rd indirect heating type microwave power detector (5-3)；By the 3rd port (1-3) and fifth port (1-
5) output is connect between second to the 7th port (2-1) of channel selector switch (2) channel selector switch (2) and the 8th port (2-2)
Connect heated microwave power sensor (5-2) and the 3rd indirect heating type microwave power detector (5-3), channel selector switch
(2) the 9th port (2-3) and the tenth port (2-4) connects the 3rd Wilkinson power combiners of microwave frequency detector (3)
(6-3), the 5th indirect heating type microwave power detector (5-5) is connect by the 3rd Wilkinson power combiners (6-3), so that
Realize to microwave signal power, phase, frequency detection；
Wherein, six ports clamped beam coupler (1) are by co-planar waveguide (10), dielectric layer (12), air layer (15) and across at it
Top clamped beam (13) is constituted；Co-planar waveguide (10) is produced on SiO2On layer (9), anchor area (11) are produced on co-planar waveguide (10)
On, the lower section metallization medium layer (12) of clamped beam (13), and collectively form coupled capacitor knot with air layer (15), clamped beam (13)
Structure, co-planar waveguide (10) length between two clamped beams (13) is λ/4.
2. clamped beam indirect heating type microwave signal detector as described in claim 1, it is characterised in that channel selecting is opened
(2) are closed by co-planar waveguide (10), anchor area (11), dielectric layer (12), cantilever beam (14), pull-down electrode (26) is constituted；Cantilever beam
(14) anchor area (11) is produced on co-planar waveguide (10), and the lower section of cantilever beam (14) makes pull-down electrode (26), and with it is drop-down
Electrode (26) upper dielectric layer (12) collectively form construction of switch；Cantilever beam (14) ground connection of channel selector switch (2), drop-down electricity
Pole (26) connects driving voltage；When driving voltage is more than or equal to cut-in voltage, cantilever beam (14) is pulled down into, and passage is strobed.
3. the clamped beam indirect heating type microwave signal detector as described in claim 1,2, it is characterised in that indirectly heat
Type micro-wave work(sensor is by Si substrates (8), SiO2Layer (9), co-planar waveguide (10), terminal resistance (19), P-type semiconductor arm
(20), N-type semiconductor arm (21), output electrode (22) is constituted；Microwave power is input to terminal resistance by co-planar waveguide (10)
(19) it is converted to heat；P-type semiconductor arm (20) and N-type semiconductor arm (21) constitute thermocouple；According to Seebeck effects,
Input microwave power size is understood by the thermoelectrical potential for measuring output electrode (22).
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008039684A (en) * | 2006-08-09 | 2008-02-21 | Toshiba Corp | Solid-state image sensing element and manufacturing method therefor and imaging device |
| CN102360039A (en) * | 2011-08-11 | 2012-02-22 | 东南大学 | Five-port micromachine cantilever-based capacitance type microwave power sensor and manufacturing method thereof |
| CN102375090A (en) * | 2011-09-22 | 2012-03-14 | 东南大学 | Micromechanical cantilever beam switch online microwave power detector and manufacturing method thereof |
| CN103344831A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
-
2017
- 2017-01-24 CN CN201710052698.5A patent/CN106711164B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008039684A (en) * | 2006-08-09 | 2008-02-21 | Toshiba Corp | Solid-state image sensing element and manufacturing method therefor and imaging device |
| CN102360039A (en) * | 2011-08-11 | 2012-02-22 | 东南大学 | Five-port micromachine cantilever-based capacitance type microwave power sensor and manufacturing method thereof |
| CN102375090A (en) * | 2011-09-22 | 2012-03-14 | 东南大学 | Micromechanical cantilever beam switch online microwave power detector and manufacturing method thereof |
| CN103344831A (en) * | 2013-06-19 | 2013-10-09 | 东南大学 | Phase detector based on micromechanical direct thermoelectric power sensors and preparation method thereof |
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