CN106711078B - A kind of production method of flexible device - Google Patents
A kind of production method of flexible device Download PDFInfo
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- CN106711078B CN106711078B CN201611245004.1A CN201611245004A CN106711078B CN 106711078 B CN106711078 B CN 106711078B CN 201611245004 A CN201611245004 A CN 201611245004A CN 106711078 B CN106711078 B CN 106711078B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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Abstract
This application involves a kind of production methods of flexible device, comprising: (1) makes first electrode layer on bottom plate, channel is arranged in first electrode layer；(2) the first electrostrictive material film is made in first electrode layer, and the first electrostrictive material film extends through channel and is connected with bottom plate；(3) the second electrode lay is formed in the upper surface of the first electrostrictive material film；(4) flexible base board is made in the upper surface of the second electrode lay, makes function element on flexible substrates；(5) apply first voltage between first electrode layer and the second electrode lay, and make phase transformation threshold voltage of the first voltage greater than the first electrostrictive material film, so that deformation occurs at least partly be detached from bottom plate for the first electrostrictive material film being connected with bottom plate；(6) first electrode layer and the first electrostrictive material film are removed from bottom plate.This method it is simple and easy, it can be achieved that large area flexible strippable substrate and be conducive to improve flexible device production yield.
Description
Technical field
This application involves flexible display technologies fields, and in particular to a kind of production method of flexible device.
Background technique
Rollable flexible base board that flexible device uses is, it can be achieved that prepared by roll-to-roll (roll to roll), but mesh
Preceding technically to there are some problems, existing flexible device production method is that flexible base board is fixed on bottom plate mostly, device
After part completes, then flexible base board is removed from bottom plate, obtain flexible device.
There are many method that flexible base board is fixed to bottom plate at present, in addition to using adhesive that flexible base board is attached to bottom plate
On method except, relatively conventional be directly by the raw material of flexible base board for example PI (polyimides) be coated on bottom plate plus
Heat baking is made into flexible base board, electronics or optical device is made on the flexible base board, then by way of laser irradiation
It is removed, i.e., imposes high intensity laser beam in macromolecule flexible base board and backplane interface, one layer of polymer electrolyte thin layer at interface is burnt
Erosion, to realize removing.
This removing mode is not only limited by laser scanning size, but also device can be damaged in laser irradiation process
Part reduces product yield.
In consideration of it, special propose the application.
Summary of the invention
A kind of production method for being designed to provide flexible device of the application, electroluminescent using electrostrictive material stretch
The deformation behavior of contracting is, it can be achieved that large area flexible strippable substrate and be conducive to improve the production yield of flexible device.
The application's the specific technical proposal is:
A kind of production method of flexible device provided by the present application, comprising the following steps:
(1) first electrode layer is made on bottom plate, and channel is set in the first electrode layer；
(2) one layer of first electrostrictive material film, and first electrostriction are made in the first electrode layer
Property material membrane extends through the channel and is connected with the bottom plate；
(3) the second electrode lay is formed in the upper surface of the first electrostrictive material film；
(4) flexible base board is made in the upper surface of the second electrode lay, makes function element on the flexible base board；
(5) apply voltage between the first electrode layer and the second electrode lay, and it is described to be greater than the voltage
The phase transformation threshold voltage of first electrostrictive material film, so that the first electrostrictive material being connected with the bottom plate
Deformation occurs for material film at least partly be detached from the bottom plate；
(6) first electrode layer and the first electrostrictive material film are removed from the bottom plate.
Preferably, the bottom plate is flexible glass substrate.
Preferably, the bottom plate is rigid glass substrate.
Preferably, before making first electrode layer on bottom plate, dielectric layer first is made on the bottom plate.
Preferably, before the dielectric layer being made on the bottom plate, third electrode layer is made on the bottom plate, in institute
It states and makes the second electrostrictive material film on third electrode layer, etch shape on the surface layer of the second electrostrictive material film
At multiple electrodes groove, the 4th electrode is filled in the multiple electrode trenches, then in second electrostrictive material
The surface of film and the 4th electrode production dielectric layer.
Preferably, on the dielectric layer realize as weigh 1 as described in step (1), (2), (3), (4)；In step (5),
Apply first voltage between the first electrode layer and the second electrode lay, and the first voltage is made to be greater than described first
The phase transformation threshold voltage of electrostrictive material film；And apply the second electricity between the third electrode layer and the 4th electrode
Pressure, and make phase transformation threshold voltage of the second voltage greater than the second electrostrictive material film；So that with the medium
Deformation occurs for layer the first electrostrictive material film, the second electrostrictive material film that are connected at least portion
Divide and is detached from the dielectric layer；
Step (6) removes the first electrode layer and the first electrostrictive material film from the dielectric layer.
Preferably, the material of the dielectric layer is selected from SiO2、SiNxAnd Al2O3；The thickness of the dielectric layer is preferably
100nm-500nm。
Preferably, the first electrostrictive material film and the second electrostrictive material film be each independently selected to
Column phase physics of liquid crystals gel and ferroelectric liquid crystals elastomer.
Preferably, the thickness of the first electrode layer, the second electrode lay, third electrode and the 4th electrode is each independently
100nm-1000nm；The first electrostrictive material film more than the first electrode layer with a thickness of 100nm-
5000nm；The second electrostrictive material film more than the third electrode layer with a thickness of 100nm-5000nm.
Preferably, the first electrode layer includes multiple strip shaped electric poles that spacing side by side is arranged on the bottom plate；It is adjacent
It is preferably spaced 100nm-2000nm between two strip shaped electric poles, the cross-sectional width of the strip shaped electric poles is preferably
100nm-5000nm, the thickness of the strip shaped electric poles are preferably 100nm-1000nm.
Technical solution provided by the present application can achieve it is following the utility model has the advantages that
The application between flexible base board and bottom plate by being arranged electrostrictive material, by giving electrostrictive material
Apply voltage, when voltage is more than the phase transformation threshold voltage of electrostrictive material, electrostrictive material deforms, thus real
The removing of existing flexible base board and bottom plate；This method is simple and easy, it can be achieved that large area flexible strippable substrate and being conducive to improve
The production yield of flexible device.
Detailed description of the invention
Fig. 1 is the access diagram according to the embodiment of the present application 1；
Fig. 2 be according to before the energization of the embodiment of the present application 1 or 2 flexible base board and bottom plate combined structure；
Fig. 3 be according to after the energization of the embodiment of the present application 1 or 2 flexible base board and bottom plate combined structure；
Fig. 4 be according to before the energization of the embodiment of the present application 3 flexible base board and bottom plate combined structure；
Fig. 5 be according to after the energization of the embodiment of the present application 3 flexible base board and bottom plate combined structure
Fig. 6 is the flexible base board and bottom plate combined structure before being powered according to the embodiment of the present application 4 or 5；
Fig. 7 is the flexible base board and bottom plate combined structure after being powered according to the embodiment of the present application 4 or 5；
Appended drawing reference,
1- bottom plate (rigid glass substrate or flexible glass substrate)；
2-A electrode；
3-A electrostrictive material film；
4-B electrode；
5- flexible base board；
6-C electrode；
7-B electrostrictive material film；
8-D electrode；
9- dielectric layer；
10-E electrode；
11-C electrostrictive material film；
12-F electrode；
13- dielectric layer；
The channel 14-.
Specific embodiment
To keep the purposes, technical schemes and advantages of the application clearer, below in conjunction with the embodiment of the present application and attached drawing,
The technical solution of the application is clearly and completely described, it is clear that described embodiment is that the application a part is implemented
Example, instead of all the embodiments.Based on technical solution provided by the present application and given embodiment, those skilled in the art
Every other embodiment obtained without making creative work, shall fall in the protection scope of this application.
"upper", "lower" are using the placement status of the composite construction in attached drawing as reference in text.
The production method of flexible device provided by the present application, generally comprises following steps:
(1) first electrode layer is made on bottom plate, and channel is set in the first electrode layer；
(2) one layer of first electrostrictive material film, and first electrostriction are made in the first electrode layer
Property material membrane extends through the channel and is connected with the bottom plate；
(3) the second electrode lay is formed in the upper surface of the first electrostrictive material film；
(4) flexible base board is made in the upper surface of the second electrode lay, makes function element on the flexible base board；
(5) apply first voltage between the first electrode layer and the second electrode lay, and make the first voltage
Greater than the phase transformation threshold voltage of the first electrostrictive material film, so that described first to be connected with the bottom plate is electroluminescent
Deformation occurs for loft material film at least partly be detached from the bottom plate；
(6) first electrode layer and the first electrostrictive material film are removed from the bottom plate.
The above method between flexible base board and bottom plate by setting electrostrictive material film (i.e. the first electrostrictive material
Expect film), and pass through the setting of noncontinuity electrode, when the voltage of application is more than the phase transformation threshold voltage of electrostrictive material film
When, electrostrictive material film is along having the first electrode layer in channel to bottom plate deformation occurs protrusion, to make electrostrictive
In non-fully attachment state between material membrane and bottom plate, so that subsequent removing becomes easily to be easy；This method is simple and easy,
Large area flexible strippable substrate can be achieved and be conducive to improve the production yield of flexible device.And remove after, still with flexible base
The connected first electrode of plate and second electrode may act as the protective layer at the flexible device back side.
As a kind of improvement of the application, the application electrostrictive material film, which is selected from, has inverse piezoelectricity material, such as
Nematic liquid crystal physical gel, ferroelectric liquid crystals elastomer.
Preferably, be located at first electrode layer more than the first electrostrictive material film with a thickness of 100nm-5000nm.
As a kind of improvement of the application, the bottom plate of the application can be selected from following any:
(a) flexible glass substrate (that is, ultra-thin glass)；
(b) rigid glass substrate；
As a kind of improvement of the application, first electrode layer be selected from the metals such as Al, Mo, Ti, Ag, Cu, Al, Mo, Ti, Ag,
The oxide semiconductor materials such as a variety of metal alloy compositions and ITO, ZnAlO in the metals such as Cu.
As a kind of improvement of the application, the second electrode lay be selected from the metals such as Al, Mo, Ti, Ag, Cu, Al, Mo, Ti, Ag,
The oxide semiconductor materials such as a variety of metal alloy compositions and ITO, ZnAlO in the metals such as Cu.
As a kind of improvement of the application, first electrode layer with a thickness of 100-1000nm；The second electrode lay with a thickness of
100nm-1000nm。
As a kind of structure of the application first electrode layer, the application first electrode layer includes that setting is spaced on bottom plate
Multiple strip shaped electric poles of (or spacing side by side setting), the interval between adjacent strip shaped electric poles, which is formed, allows electrostrictive material
The channel that film is extended through to be connected with bottom plate.
Preferably, the cross-sectional width of strip shaped electric poles is 100nm-5000nm, between two neighboring strip shaped electric poles between be divided into
100nm-2000nm；Strip shaped electric poles with a thickness of 100nm-1000nm.
As another embodiment, the bottom plate includes the dielectric layer made on the bottom plate, can in bottom plate and
Other electrode layers and electrostrictive material film layer are in addition made again between dielectric layer, specifically:
Before making dielectric layer on bottom plate, third electrode layer is made on bottom plate, makes second on third electrode layer
Electrostrictive material film etches to form multiple electrodes groove, in multiple electrodes on the surface layer of the second electrostrictive material film
The 4th electrode, the medium then made on the surface of the second electrostrictive material film and the 4th electrode are filled in groove
Layer；
On the dielectric layer realize as weigh 1 as described in step (1), (2), (3), (4)；
In step (5), apply first voltage between first electrode layer and the second electrode lay, and be greater than first voltage
The phase transformation threshold voltage of first electrostrictive material film；And apply the second electricity between third electrode layer and the 4th electrode
Pressure, and make phase transformation threshold voltage of the second voltage greater than the second electrostrictive material film；So as to be connected with the dielectric layer
The first electrostrictive material film, the second electrostrictive material film deformation occurs at least partly be detached from institute
State dielectric layer；
Step (6) removes the first electrode layer and the first electrostrictive material film from the dielectric layer.
It is above-mentioned compared to the structure only containing first electrode layer, the second electrode lay and the first electrostrictive material film
It is set above and below using dielectric layer containing dielectric layer and third electrode layer, the 4th electrode and the second electrostrictive material film
The electrostrictive material set is respectively facing dielectric layer and raised deformation occurs, and makes to be formed between dielectric layer and electrostrictive material
Plural via hole, can be more easily peelable, and does not have to destroy device in stripping process, also relatively higher on yield；Removing is flexible
Remaining material can also be reused after substrate, save the cost.
As a kind of specific embodiment of the application, above-mentioned steps are further comprising the steps of: electroluminescent stretching described second
The surface layer of contracting material membrane etches to be formed after multiple electrodes groove, and one layer the 4th is made on the second electrostrictive material film
Electrode material, and it is filled in the extension of the 4th electrode material in electrode trenches, then etch away the second electrostrictive material film
With the 4th more than electrode trenches electrode materials, formation is only filled with the 4th electrode in electrode trenches.Compared to directly in electricity
The method that the 4th electrode is filled in the groove of pole, because of the planarization after filling to guarantee surface, it is also necessary to subsequent planarizing process,
And by being initially formed one layer of the 4th electrode material, then etching away the mode of entire one layer of the 4th electrode material of groove or more can be direct
Obtain even curface.
As a kind of improvement of the application, the first electrostrictive material film and the second electrostrictive material film can be respective
Independently selected from nematic liquid crystal physical gel and ferroelectric liquid crystals elastomer.
Preferably, be located at the first electrostrictive material film of first electrode layer or more with a thickness of 100nm-5000nm,
Positioned at the 4th electrode the second electrostrictive material film below with a thickness of 100nm-5000nm, preferably 100nm-
2000nm。
As a kind of improvement of the application, the material of dielectric layer is selected from SiO2、SiNx、Al2O3Equal oxides or nitride.
Preferably, dielectric layer with a thickness of 100nm-500nm.
As a kind of improvement of the application, the first electrode layer, the second electrode lay, third electrode layer and the 4th electrode are each
From independently selected from a variety of metal alloy compositions in the metals such as the metals such as Al, Mo, Ti, Ag, Cu, Al, Mo, Ti, Ag, Cu with
And the oxide semiconductor materials such as ITO, ZnAlO, and each electrode can be used simultaneously same material.
Preferably, the first electrode layer, the second electrode lay, third electrode and the 4th electrode thickness be each independently
100nm-1000nm。
As a kind of preferable embodiment of the application, electrode trenches are strip groove, and multiple electrodes groove is in the first electricity
Cause spacing side by side setting in the surface layer of loft material film.
Preferably, the spacing distance between two neighboring strip groove is 100nm-2000nm；The width of strip groove is
100nm-5000nm, the depth of strip groove are 100nm-1000nm.
It is further illustrated below by way of technical solution of the specific embodiment to the application:
Embodiment 1: single layer electrostrictive material film production flexible device is used
Step 100: by coating processes method, spacing side by side setting is more on the rigid glass substrate 1 with a thickness of 0.5cm
A material is the strip A electrode 2 of aluminium, the wide 500nm in section, high 200nm, the two neighboring strip A electrode 2 of single strip A electrode 2
It is spaced 100nm, the interval between adjacent strip A electrode 2 forms channel 14, and part rigid glass substrate 1 is exposed in channel 14
In (as shown in Figure 1), and pin is set on strip A electrode 2；
Step 101: making a layer thickness more than the upper surface of A electrode 2 by coating processes method is 300nm, material
For the first electrostrictive material film 3 (phase transformation threshold voltage is 2.6V) of nematic phase gel, and A electrostrictive material film 3
Channel 14 is extended downwardly through to be covered on the exposed part of rigid glass substrate 1；
Step 102: forming a layer thickness in the upper surface of A electrostrictive material film 3 by coating processes method is
200nm, material are the B electrode 4 of ITO, and are electrically connected A electrode 2 and B electrode 4 by pin；
Step 103: the flexible base board that a layer thickness is 12 μm is made in the upper surface of B electrode 4 by coating processes method
5, display device is made on flexible base board 5；The composite construction shape that the step is formed is as shown in Figure 2；
Step 104: apply > the voltage of 3.0V between A electrode 2 and B electrode 4, is powered after a period of time, A electrostriction
Property material membrane 3 along A electrode 2 raised deformation occurs towards rigid glass substrate 1, to make A electrostrictive material film 3 and rigidity
In non-fully attachment state between glass substrate 1, as shown in Figure 3；
Step 105: A electrode 2 and A electrostrictive material film 3 being removed from rigid glass substrate 1, due to A after being powered
Raised deformation largely occurs for bottom surface that electrostrictive material film 3 is connected with rigid glass substrate 1, thus stripping process compared with
It is easy.
Embodiment 2: single layer electrostrictive material film production flexible device is used
Step 100: by coating processes method, the item that multiple materials are aluminium is arranged in spacing side by side on flexible glass substrate 1
Shape A electrode 2, the wide 500nm in section, high 200nm, the two neighboring strip A electrode 2 of single strip A electrode 2 are spaced 100nm, exposed
Partially flexible glass substrate 1 out, and pin is set on strip A electrode 2；
Step 101: making a layer thickness more than the upper surface of A electrode 2 by coating processes method is 300nm, material
For the first electrostrictive material film 3 (phase transformation threshold voltage is 2.6V) of nematic phase gel, and A electrostrictive material film 3
It extends downwardly and is covered on the exposed part of flexible glass substrate 1；
Step 102: forming a layer thickness in the upper surface of A electrostrictive material film 3 by coating processes method is
200nm, material are the B electrode 4 of ITO, and are electrically connected A electrode 2 and B electrode 4 by pin；
Step 103: the flexible base board that a layer thickness is 12 μm is made in the upper surface of B electrode 4 by coating processes method
5, display device is made on flexible base board 5；The composite construction shape that the step is formed is as shown in Figure 2；
Step 104: apply > the voltage of 3.0V between A electrode 2 and B electrode 4, is powered after a period of time, A electrostriction
Property material membrane 3 along A electrode 2 raised deformation occurs towards flexible glass substrate 1, to make A electrostrictive material film 3 and flexible
In non-fully attachment state between glass substrate 1, as shown in Figure 3；
Step 105: A electrode 2 and A electrostrictive material film 3 are removed from flexible glass substrate 1.
Embodiment 3: single layer electrostrictive material film production flexible device is used
Step 100: through sputtering technology method on the rigid glass substrate or flexible glass substrate 1 with a thickness of 0.7cm
Make a layer thickness be 300nm, material Al2O3Dielectric layer 13, then multiple materials are arranged in spacing side by side on dielectric layer 13
For the strip A electrode 2 of albronze, the wide 3000nm in section, high 1000nm, the two neighboring strip A electricity of single strip A electrode 2
Pole 2 is spaced 1000nm, exposes certain media layer 13, and pin is arranged on strip A electrode 2；
Step 101: making that a layer thickness is 4500nm, material is more than 2 upper surface of A electrode by coating processes method
First electrostrictive material film 3 of ferroelectric liquid crystals elastomer, and A electrostrictive material film 3 extends downwardly and is covered on medium
On the exposed part of layer 13；
Step 102: forming a layer thickness in the upper surface of A electrostrictive material film 3 by sputtering technology method is
1000nm, material are the B electrode 4 of Ti, and are electrically connected A electrode 2 and B electrode 4 by pin；
Step 103: making a layer thickness in the upper surface of B electrode 4 by coating processes method is 15 μm of flexible base boards 5,
Display device is made on flexible base board 5；The composite construction shape that the step is formed is as shown in Figure 4；
Step 104: the electricity of the phase transformation threshold voltage of ferroelectric liquid crystals elastomer is applied more than between A electrode 2 and B electrode 4
Pressure was powered after a period of time, and towards dielectric layer 13 raised deformation occurs for A electrostrictive material film 3 along A electrode 2, to make A
In non-fully attachment state between electrostrictive material film 3 and dielectric layer 13, as shown in Figure 5；
Step 105: A electrode 2 and A electrostrictive material film 3 are removed from dielectric layer 13；
As a result prove: due to this example dielectric layer be directly arranged between bottom plate and electrostrictive material film make it is described
Bottom plate electrostrictive material film compared with the binding force between electrostrictive material film directly acts on the binding force of bottom plate
Much smaller, therefore, after towards dielectric layer 13 raised deformation occurs for A electrostrictive material film 3 along A electrode 2, A is electroluminescent to be stretched
Plural via hole is formed between contracting material membrane 3 and dielectric layer, can compare Examples 1 and 2, stripping process is more easy, and soft
Property element manufacturing yield also increases.
Embodiment 4: the double-deck electrostrictive material film production flexible device is used
Step 200: making a layer thickness on the bottom plate 1 with a thickness of 0.4cm by sputtering technology method is 200nm, material
Material is the C electrode 6 of ZnAlO, and one layer of overall thickness of production is 1000nm on C electrode 6, material isThe B of nematic phase gelIt is electroluminescent to stretch
Contracting material membrane 7；
Step 201: it etches to form multiple strip shaped electric poles grooves on the surface layer of B electrostrictive material film 7, electrode trenches
Width is 500nm, the spacing distance of depth 500nm, two neighboring electrode trenches is 200nm；By sputtering technology method in B
Layer of material is made on electrostrictive material film 7 and is the electrode material of Ag, and electrode material extension is made to be filled in electrode ditch
In slot, the electrode material of B electrostrictive material film and electrode trenches or more is then etched away, is only retained in electrode trenches
Electrode material is as D electrode 8；It is electrically connected D electrode 8 and C electrode 6 by pin；
Step 202: one layer is made on the surface of B electrostrictive material film 7 and D electrode 8 by CVD process
With a thickness of 200nm, material SiO2Dielectric layer 9；
Step 203: by coating or sputtering technology method, spacing side by side makes multiple strip E electrodes 10 on dielectric layer 9,
10 cross-sectional width of strip E electrode is 500nm, is highly 500nm；It is divided into 200nm between two neighboring strip E electrode 10, is exposed
Certain media layer 9, and pin is set on E electrode 10；
Step 204: made more than the upper surface of E electrode 10 by coating method a layer thickness be 500nm, material be to
The C electrostrictive material film 11 of column phase gel, and C electrostrictive material film 11 extends downwardly and is covered on the naked of dielectric layer 9
Reveal on part；
Step 205: making a layer thickness in the upper surface of C electrostrictive material film 11 by coating processes method is
200nm, material are the F electrode 12 of ZnAlO, and are electrically connected shown F electrode 12 by pin with E electrode 10；
Step 206: the flexible base board 5 with a thickness of 13 μm, material for PI is made on F electrode 12 by coating method,
Display device is made on flexible base board 5, the lamination layer structure that this step is formed is as shown in Figure 6；
Step 207: be applied more than respectively between C electrode 6 and D electrode 8 and between E electrode 10 and F electrode 12 to
The voltage of the phase transformation threshold voltage of column phase gel was powered after a period of time, and B electrostrictive material film 7 is along D electrode towards medium
Raised deformation occurs for layer 9, and towards dielectric layer 9 raised deformation occurs for C electrostrictive material film 11 along E electrode 10, such as Fig. 7 institute
Show；
Step 208: the E electrode 10 of 9 or more dielectric layer and C electrostrictive material film 11 are removed from dielectric layer 9.
Embodiment 5: the double-deck electrostrictive material film production flexible device is used
Step 200: making a layer thickness on the bottom plate 1 with a thickness of 0.7cm by sputtering technology method is 500nm, material
Material is the C electrode 6 of Ti, and one layer of overall thickness of production is 1500nm on C electrode 6, material isFerroelectric liquid crystals elastomerB is electroluminescent to be stretched
Contracting material membrane 7；
Step 201: it etches to form multiple strip shaped electric poles grooves on the surface layer of B electrostrictive material film, electrode trenches
Width is 2000nm, the spacing distance of depth 1000nm, two neighboring electrode trenches is 500nm；Pass through sputtering technology method
Layer of material is made on B electrostrictive material film 7 and is the electrode material of ITO, and electrode material extension is made to be filled in electricity
In the groove of pole, the electrode material of B electrostrictive material film and electrode trenches or more is then etched away, electrode trenches are only retained
Interior electrode material is as D electrode 8；It is electrically connected D electrode 8 and C electrode 6 by pin；
Step 202: one layer is made on the surface of B electrostrictive material film 7 and D electrode by coating processes method
With a thickness of 200nm, material Al2O3Dielectric layer 9；
Step 203: by sputtering technology method, spacing side by side makes multiple strip E electrodes 10, strip E on dielectric layer 9
10 cross-sectional width of electrode is 2000nm, is highly 1000nm；It is divided into 500nm between two neighboring strip E electrode 10, exposes part
Dielectric layer 9, and pin is set on E electrode 10；
Step 204: making that a layer thickness is 3000nm, material is ferroelectricity more than 10 surface of E electrode by coating method
The C electrostrictive material film 11 of liquid crystal elastic body, and C electrostrictive material film 11 extends downwardly and is covered on dielectric layer 9
On exposed part；
Step 205: making a layer thickness in the upper surface of C electrostrictive material film 11 by coating processes method is
500nm, material are the F electrode 12 of Ti, and are electrically connected shown F electrode 12 by pin with E electrode 10；
Step 206: the flexible base board 5 with a thickness of 15 μm, material for PI is made on F electrode 12 by coating method,
Display device is made on flexible base board 5, the lamination layer structure that this step is formed is as shown in Figure 6；
Step 207: being applied more than ferroelectric liquid crystals between C electrode and D electrode and between E electrode 10 and F electrode 12
The voltage of the phase transformation threshold voltage of elastomer was powered after a period of time, and B electrostrictive material film 7 is along D electrode towards dielectric layer
9 occur raised deformation, and towards dielectric layer 9 raised deformation occurs for C electrostrictive material film 11 along E electrode 10, as shown in Figure 7；
Step 208: the E electrode 10 of 9 or more dielectric layer and C electrostrictive material film 11 are removed from dielectric layer 9.
As a result it proves: comparing embodiment 3, embodiment 4 and 5 between dielectric layer and bottom plate due to also having made other electricity
Pole layer and electrostrictive material film, after a period of time that is powered, B electrostrictive material film 7 is along D electrode towards dielectric layer
9 occur raised deformation, and towards dielectric layer 9 raised deformation occurs for C electrostrictive material film 11 along E electrode 10, by described first
Electrode layer and the first electrostrictive material film are removed from the dielectric layer 9.Utilize the upper and lower set electricity of dielectric layer
It causes loft material to be respectively facing dielectric layer and raised deformation occurs, make to form plural mistake between dielectric layer and electrostrictive material
Hole, can be more easily peelable, and does not have to destroy device in stripping process, also relatively higher on yield；After removing flexible base board
Remaining material can also be reused, save the cost.
It is not for limiting claim, any this field skill although the application is disclosed as above with preferred embodiment
Art personnel without departing from the concept of this application, can make several possible variations and modification, therefore the application
Protection scope should be subject to the range that the claim of this application is defined.
Claims (11)
1. a kind of production method of flexible device, which comprises the following steps:
(1) first electrode layer is made on bottom plate, and channel is set in the first electrode layer；
(2) one layer of first electrostrictive material film, and the first electrostrictive material are made in the first electrode layer
Material film extends through the channel and is covered on the exposed part of the bottom plate；
(3) the second electrode lay is formed in the upper surface of the first electrostrictive material film；
(4) flexible base board is made in the upper surface of the second electrode lay, makes function element on the flexible base board；
(5) apply first voltage between the first electrode layer and the second electrode lay, and be greater than the first voltage
The phase transformation threshold voltage of the first electrostrictive material film, so that first electrostriction being connected with the bottom plate
Property material membrane deformation occurs to being at least partly detached from the bottom plate；
(6) first electrode layer and the first electrostrictive material film are removed from the bottom plate；
Wherein, the first electrode layer includes multiple strip shaped electric poles that spacing side by side is arranged on the bottom plate, and adjacent is described
Interval between strip shaped electric poles forms the channel.
2. the production method of flexible device according to claim 1, which is characterized in that the bottom plate is flexible glass base
Plate.
3. the production method of flexible device according to claim 1, which is characterized in that the bottom plate is nonbreakable glass base
Plate.
4. a kind of production method of flexible device, which comprises the following steps:
(1) dielectric layer is made on bottom plate, makes first electrode layer on the dielectric layer, is arranged in the first electrode layer
Channel；Wherein, the bottom plate is flexible glass substrate or rigid glass substrate；
(2) one layer of first electrostrictive material film, and the first electrostrictive material are made in the first electrode layer
Material film extends through the channel and is covered on the exposed part of the dielectric layer；
(3) the second electrode lay is formed in the upper surface of the first electrostrictive material film；
(4) flexible base board is made in the upper surface of the second electrode lay, makes function element on the flexible base board；
(5) apply first voltage between the first electrode layer and the second electrode lay, and be greater than the first voltage
The phase transformation threshold voltage of the first electrostrictive material film, so that be connected with the dielectric layer described first electroluminescent stretches
Deformation occurs for contracting material membrane at least partly be detached from the dielectric layer；
(6) first electrode layer and the first electrostrictive material film are removed from the dielectric layer.
5. the production method of flexible device according to claim 4, which is characterized in that
Before making the dielectric layer on the bottom plate, third electrode layer is made on the bottom plate, in the third electrode
The second electrostrictive material film is made on layer, etches to form multiple electrodes on the surface layer of the second electrostrictive material film
Groove fills the 4th electrode in the multiple electrode trenches, then in the second electrostrictive material film and described
The surface production of the 4th electrode dielectric layer.
6. the production method of flexible device according to claim 5, which is characterized in that as claimed in claim 4 realizing
The step of (1), (2), (3), (4)；
In step (5), apply the first voltage between the first electrode layer and the second electrode lay, and makes described
First voltage is greater than the phase transformation threshold voltage of the first electrostrictive material film；And in the third electrode layer and the 4th
Apply second voltage between electrode, and the phase transformation threshold value for making the second voltage be greater than the second electrostrictive material film is electric
Pressure；So that the first electrostrictive material film, the second electrostrictive material film that are connected with the dielectric layer
Deformation occurs at least partly be detached from the dielectric layer；
Step (6) removes the first electrode layer and the first electrostrictive material film from the dielectric layer.
7. the production method of flexible device according to claim 6, which is characterized in that the material of the dielectric layer is selected from
SiO2, SiNx and Al2O3.
8. the production method of flexible device according to claim 6, which is characterized in that the dielectric layer with a thickness of
100nm-500nm。
9. the production method of flexible device according to claim 5, which is characterized in that first electrostrictive material
Film and the second electrostrictive material film are each independently selected from nematic liquid crystal physical gel and ferroelectric liquid crystals elastomer.
10. the production method of flexible device according to claim 5, which is characterized in that the first electrode layer, the second electricity
The thickness of pole layer, third electrode and the 4th electrode is each independently 100nm-1000nm；More than the first electrode layer
The first electrostrictive material film with a thickness of 100nm-5000nm；Positioned at the 4th electrode below described second
Electrostrictive material film with a thickness of 100nm-5000nm.
11. the production method of flexible device according to claim 1, which is characterized in that the two neighboring strip shaped electric poles
Between between be divided into 100nm-2000nm, the cross-sectional width of the strip shaped electric poles is 100nm-5000nm, the strip shaped electric poles
With a thickness of 100nm-1000nm.
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| CN104698631A (en) * | 2015-03-30 | 2015-06-10 | 京东方科技集团股份有限公司 | Display device and ultra-thin glass joint structure and stripping method thereof |
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| CN107564856B (en) * | 2016-07-01 | 2020-02-21 | 上海和辉光电有限公司 | Stripping method of flexible substrate |
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| EP1081745A2 (en) * | 1999-09-06 | 2001-03-07 | LINTEC Corporation | Method of detaching article and apparatus |
| WO2014100186A2 (en) * | 2012-12-21 | 2014-06-26 | Invensas Corporation | Method and structure for carrier-less thin wafer handling |
| CN104465475A (en) * | 2013-09-22 | 2015-03-25 | 昆山工研院新型平板显示技术中心有限公司 | Method for manufacturing flexible display device and flexible display device |
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