CN106707619A - White area light source and liquid crystal display device thereof - Google Patents
White area light source and liquid crystal display device thereof Download PDFInfo
- Publication number
- CN106707619A CN106707619A CN201710028331.XA CN201710028331A CN106707619A CN 106707619 A CN106707619 A CN 106707619A CN 201710028331 A CN201710028331 A CN 201710028331A CN 106707619 A CN106707619 A CN 106707619A
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- Prior art keywords
- layer
- oxide semiconductor
- liquid crystal
- white area
- transparency carrier
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133621—Illuminating devices providing coloured light
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133602—Direct backlight
- G02F1/133609—Direct backlight including means for improving the color mixing, e.g. white
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
The invention discloses a white area light source and a liquid crystal display device thereof, and relates to the technical field of area light sources and liquid crystal display devices, solving the technical problems of white area light sources, made by OLEDs (organic light-emitting diodes) in the prior art, in light emission efficiency, material stability and service life. The white area light source comprises a transparent substrate. The white area light source is characterized in that an oxide semiconductor composite layer for electrifying and radiating ultraviolet-blue light band electromagnetic waves is arranged on the reverse side of the transparent substrate; a quantum-dot membrane for forming uniform white area light sources when being excited by the electromagnetic waves radiated by the oxide semiconductor composite layer is arranged on the front side of the transparent substrate. Oxide semiconductor materials have low manufacture costs, simple structures, stable performance and high light efficiency, and are easy to produce massively and capable of bending flexibly. The liquid crystal display device derived from the white area light source has the advantages of low weight, thinness and high efficiency.
Description
Technical field
The present invention relates to area source and LCD Technology field.
Background technology
White area source has important meaning for illumination and flat-panel monitor.It is frivolous, efficient, can in terms of illumination
The white area source of flexural deformation is always the perfect light source that people pursue, Organic Light Emitting Diode(OLED)It is that one kind is hopeful
Developing direction, but luminous efficiency and life-span, cost, stability of material aspect face many obstacles.
In terms of FPD, especially liquid crystal display is, it is necessary to use white area source as backlight.Traditional way
Indirect area source is, i.e., obtains uniform white by light guide plate and other optical brightening membranes using spot light or line source
Color area source, its shortcoming is complex structure, and optical efficiency is not high, and production and assembly flow is excessively complicated, and is realizing flexibility
Flexible liquid crystal display aspect turns into short slab.
Quantum dot is fine particle of the particle size in nanoscale.When being powered or being irradiated by the light of certain wavelength,
The light of another wavelength will be given off.The wavelength of the light for being radiated is relevant with the size of quantum dot.Select the particle of particular dimensions
And irradiation bomb, can obtain constituting the base colors such as the required red, green, blue of colored display.
The content of the invention
In sum, it is an object of the invention to solve white area source that existing use OLED makes luminous efficiency,
There is technical barrier in stability of material and life-span aspect;There is complex structure using indirect area source, optical efficiency is not high, it is raw
Produce assembling flow path excessively complicated, be unsuitable for the technical deficiency of flexible liquid crystal display, and propose a kind of white area source and its liquid
Crystal display.
Be the technical problem for solving proposition of the invention, the technical scheme for using for:A kind of white area source, includes
Bright substrate, it is characterised in that:The back side of described transparency carrier is provided with the oxide of the radiation UV-blue wave band electromagnetic wave that is powered
Semiconductor composite layer;The front of described transparency carrier is provided with the electromagnetic wave radiated by described oxide semiconductor composite bed
Excite the quantum dot film to form flat-white area source.
Described oxide semiconductor composite bed includes the first electrode layer on the transparency carrier, positioned at first
P-type oxide semiconductor layer on electrode layer, the N-type oxide semiconductor layer on p-type oxide semiconductor layer, Yi Jishe
The second electrode lay on N-type oxide semiconductor layer;Described first electrode layer is transparency electrode, described the second electrode lay
It is non-transparent electrode.
Or, described oxide semiconductor composite bed includes the first electrode layer on the transparency carrier, position
In the N-type oxide semiconductor layer in first electrode layer, the p-type oxide semiconductor layer on N-type oxide semiconductor layer,
And the second electrode lay on p-type oxide semiconductor layer;Described first electrode layer is transparency electrode, described second
Electrode layer is non-transparent electrode.
The oxide that described p-type oxide semiconductor layer and N-type oxide semiconductor layer is used is wide bandgap semiconductor
Oxide, operating voltage needed for applying between p-type oxide semiconductor layer and N-type oxide semiconductor layer, can radiate purple
Outward -- the light wave in blue wave band.
Described wide bandgap semiconductor oxide includes:Zinc oxide, titanium oxide, tin-oxide, cobalt/cobalt oxide, chromium oxygen
Compound, nickel oxide, niobium oxide, tantalum pentoxide and barium oxide.Typical material includes zinc oxide, titanium dioxide, titanium dioxide
Tin, cobalt sesquioxide, chrome green, nickel oxide, tantalum pentoxide, vanadic anhydride, niobium pentaoxide.Except these binary oxygen
Outside compound, part ternary oxide semiconductor, its stimulated radiation electromagnetic wavelength is located in the range of UV-blue, falls within power
Within profit is advocated.
Described transparency carrier is hard transparent substrate or flexible transparent substrate.
Described quantum dot film is comprising equally distributed radiation-curable blue with yellow, green with purplish red or red with the double-colored light of ultramarine
Quantum dot film, or the quantum dot of radiation-curable bluish-green red trichromatism light film(Referred to as red quantum dot, amount of blue
Sub- point, green quantum dot etc.).
Liquid crystal display comprising described white area source, it is characterised in that:The front of described white area source sets
There is liquid crystal display panel.
Described liquid crystal display panel include stack gradually the first layer of polarizer, interior transparency carrier, pixel driver layer,
Layer of liquid crystal molecule, ITO electrode layer, redgreenblue ink layer, outer transparency carrier and the second layer of polarizer;Described interior transparent base
Plate and outer transparency carrier are hard transparent substrate or flexible transparent substrate.
Or, described liquid crystal display panel includes the first layer of polarizer, interior transparency carrier, the pixel drive for stacking gradually
Dynamic layer, layer of liquid crystal molecule, ITO electrode layer, outer transparency carrier and the second layer of polarizer;Include on described quantum dot film and institute
The sub-pixel area alternating of the pixel driver floor stated and one by one regular corresponding red quantum dot area, green quantum dot region and amount of blue
Zi Dian areas;Also include face corresponding with the alternatively non-transparent district of the pixel cell of described pixel driver layer on described quantum dot film
Color isolated area;Described interior transparency carrier and outer transparency carrier is hard transparent substrate or flexible transparent substrate.
Beneficial effects of the present invention are:The present invention utilizes broad stopband oxide semiconductor electroluminescence characters and quantum dot
Efficient luminescence generated by light feature, obtain white area source.Oxide semiconductor material cost of manufacture is cheap, simple structure, property
Can be stable, light efficiency is high, it is easy to large area, can flexible bending.Have using the liquid crystal display derived from white area source light
It is thin, the advantages of efficient.Quantum dot film is further patterned into optimization as needed, the colour in conventional liquid crystal can be saved
Optical filter, further lifts light utilization efficiency.
Brief description of the drawings
Fig. 1 be white area source of the invention use red, green, blue three primary colours quantum dot when structural representation;
Structural representation when Fig. 2 is blue white area source use of the invention, yellow dual base color quantum dot;
Fig. 3 be liquid crystal display of the invention comprising redgreenblue ink layer when structural representation;
Fig. 4 be liquid crystal display of the invention without redgreenblue ink layer when structural representation.
Specific embodiment
Structure of the invention is further described below in conjunction with accompanying drawing and currently preferred specific embodiment.
Shown in referring to Figures 1 and 2, present invention white area source includes transparency carrier 1, and transparency carrier 1 can be hard
Matter transparency carrier or flexible transparent substrate;The material of transparency carrier 1 can be the materials such as glass or PET;The back side of transparency carrier 1 sets
There is the oxide semiconductor composite bed 2 of the radiation UV-blue wave band electromagnetic wave that is powered;The front of described transparency carrier 1 is provided with
The electromagnetic wave radiated by described oxide semiconductor composite bed 2 excites the quantum dot film 3 to form flat-white area source.
The structure of oxide semiconductor composite bed 2 can use the following two kinds structure:
1st kind of structure:Shown in reference picture 1, oxide semiconductor composite bed 2 includes first on the transparency carrier 1
Electrode layer 21, the p-type oxide semiconductor layer 22 in first electrode layer 21, the N on p-type oxide semiconductor layer 22
Type oxide semiconductor layer 23, and the second electrode lay 24 on N-type oxide semiconductor layer 23;Described first electrode
Layer 21 is transparency electrode, and described the second electrode lay 24 is non-transparent electrode.When between first electrode layer 21 and the second electrode lay 24
When applying certain voltage, p-type oxide semiconductor layer 22 radiates ultraviolet-blue with the PN junction that N-type oxide semiconductor layer 23 is constituted
Optical band electromagnetic wave, the frequency of electromagnetic wave is determined by the energy gap and internal level structure of oxide semiconductor.
The oxide that p-type oxide semiconductor layer 22 and N-type oxide semiconductor layer 23 are used is wide bandgap semiconductor oxygen
Compound.Wide bandgap semiconductor oxide is included but is not limited to:Zinc oxide, titanium oxide, tin-oxide, cobalt/cobalt oxide, chromium oxygen
Compound, nickel oxide, niobium oxide, tantalum pentoxide and barium oxide.
The making step of oxide semiconductor composite bed 2 is:First electrode layer 21, P is sequentially depositing in the top of transparency carrier 1
Type oxide semiconductor layer 22, N-type oxide semiconductor layer 23 and the second electrode lay 24.Deposition process includes magnetron sputtering, changes
Learn vapour deposition and coating etc..
2nd kind of structure:Relative to the 1st kind of structure, only p-type oxide semiconductor layer 22 and N-type oxide semiconductor layer 23
Position is exchanged, and structural principle is similar, and explanation is not repeated herein.
Quantum dot film 3 is to be formed uniformly quantum dot layer of the diameter in nanoscale by the method such as spraying or printing, is measured
Son is put:Cadmium selenide, indium phosphide etc.;The size of quantum dot is controlled, under the exciting of UV-blue wave band electromagnetic wave, amount
Son point can send red, blue, the light of the color such as green, yellow.
As shown in fig. 1, quantum dot film 3 is the film of bluish-green red trichromatism quantum dot, namely by red, blue, green three
The quantum dot for planting color is distributed in space fine-scale, is limited by eye space resolution capability, and visually observation is uniform by acquisition
White area source.
As shown in Figure 2, quantum dot film 3 is the film comprising the yellow double-colored quantum dot of equally distributed indigo plant,;In specific implementation
During, quantum dot film 3 can also be the film of the quantum dot combination of other different colours, for example:It is green with purplish red, it is red with ultramarine
Etc..
Outer illumination aspect has wide practical use white area source of the invention indoors.Using flexible transparent substrate,
The shape of this area source can be diversified, is illuminated for curved surfaces such as automobiles highly beneficial.
Shown in reference picture 3 and Fig. 4, white area source of the invention can be as backlight, with existing LCD
The superposition of plate 4 constitutes liquid crystal display, that is to say the liquid crystal display of white area source of the invention, by above-mentioned white area source and
Constituted located at its positive liquid crystal display panel.
Shown in reference picture 3, liquid crystal display panel 4 include stack gradually the first layer of polarizer, interior transparency carrier 41,
Pixel driver layer 42, layer of liquid crystal molecule 43, ITO electrode layer 44, redgreenblue ink layer 45, outer transparency carrier 46 and second are inclined
Light lamella 47;Pixel driver layer 42 includes passive array and the active array-type containing TFT drive circuits.Described interior transparent base
Connection is pressed by epoxy glue frame 48 between plate 41 and outer transparency carrier 46;The technique of this liquid crystal display panel very into
It is ripe, it is not described in detail here.As needed, described interior transparency carrier 41 and outer transparency carrier 46 can be hard transparent substrate
Or flexible transparent substrate.The liquid crystal display that traditional area source indirectly does backlight is compared, the structure of this liquid crystal display is significantly
Simplify, eliminate light guide plate, reflector plate, diffusion sheet and bright enhancement film etc., production and assembly flow is greatly simplified.Meanwhile, multilayer film
The light losses such as caused scattering, absorption are also reduced.Because liquid crystal display panel 4 includes redgreenblue in the present embodiment
Ink layer 45, to the quantum dot colors combination of the quantum dot film 3 of white area source without particular/special requirement, as long as can uniformly go out white
Coloured light.
Shown in reference picture 4, when liquid crystal display panel 4 is free of redgreenblue ink layer, namely liquid crystal display panel 4
Comprise only the first layer of polarizer, interior transparency carrier 41, the pixel driver layer 42, layer of liquid crystal molecule 43, ITO electrode for stacking gradually
The layer 44, layer of polarizer 47 of outer transparency carrier 46 and second is constituted.Because pixel driver layer 42 includes some aobvious of matrix distribution
Show pixel cell, each display pixel cells includes red transparent area 421, green transparent area 422 and blue transparent area 423;
Red transparent area 421, green transparent area 422 and blue transparent area 423 are referred to as sub-pixel area, are provided between adjacent transparent area
Alternatively non-transparent district 424;In embodiment shown in Fig. 4, the pixel cell with described pixel driver layer 42 is included on quantum dot film 3
Red transparent area 421, green transparent area 422 and the blue one-to-one red quantum dot area 31 of transparent area 423, green quantum dot
Area 32 and blue quantum dot region 33, that is to say the sub-pixel area included on described quantum dot film with described pixel driver layer
Alternating and one by one regular corresponding red quantum dot area, green quantum dot region and blue quantum dot region;Also included on quantum dot film 3
There is color isolated area 34 corresponding with the alternatively non-transparent district 424 of the pixel cell of described pixel driver layer 42.The present embodiment is used
Redgreenblue quantum dot area source and the matching structure of liquid crystal panel, can also save on traditional liquid crystal display panel by red green
The chromatic filter layer that blue three color inks are formed.Usually, optical energy loss 2/3rds can be to lead by this ink color filter layer
The major reason for causing liquid crystal display luminous energy utilization rate low.The present embodiment is by the distributed areas of redgreenblue quantum dot and shows
Effective light transmission area on panel is accurate and rule correspondence, it is possible to achieve luminous energy " conversion immediately, utilize immediately ", without again by coloured silk
The region color separation of color filtering optical layer, the efficiency of light energy utilization can be substantially improved.
Claims (10)
1. a kind of white area source, includes transparency carrier, it is characterised in that:The back side of described transparency carrier is provided with energization spoke
Penetrate the oxide semiconductor composite bed of UV-blue wave band electromagnetic wave;The front of described transparency carrier is provided with by described oxygen
The electromagnetic wave that compound semiconductor composite layer is radiated excites the quantum dot film to form flat-white area source.
2. a kind of white area source according to claim 1, it is characterised in that:Described oxide semiconductor composite bed bag
The first electrode layer on the transparency carrier is included, the p-type oxide semiconductor layer in first electrode layer, positioned at P
N-type oxide semiconductor layer on type oxide semiconductor layer, and the second electrode on N-type oxide semiconductor layer
Layer;Described first electrode layer is transparency electrode, and described the second electrode lay is non-transparent electrode.
3. a kind of white area source according to claim 1, it is characterised in that:Described oxide semiconductor composite bed bag
The first electrode layer on the transparency carrier is included, the N-type oxide semiconductor layer in first electrode layer, positioned at N
P-type oxide semiconductor layer on type oxide semiconductor layer, and the second electrode on p-type oxide semiconductor layer
Layer;Described first electrode layer is transparency electrode, and described the second electrode lay is non-transparent electrode.
4. a kind of white area source according to Claims 2 or 3, it is characterised in that:Described p-type oxide semiconductor layer
The oxide used with N-type oxide semiconductor layer is wide bandgap semiconductor oxide, in p-type oxide semiconductor layer and N-type
Operating voltage needed for applying between oxide semiconductor layer, can radiate ultraviolet -- the light wave in blue wave band.
5. a kind of white area source according to claim 4, it is characterised in that:Described wide bandgap semiconductor oxide bag
Include:Zinc oxide, titanium oxide, tin-oxide, cobalt/cobalt oxide, chromated oxide, nickel oxide, niobium oxide, tantalum pentoxide and
Barium oxide.
6. a kind of white area source according to claim 1, it is characterised in that:Described transparency carrier is hard transparent base
Plate or flexible transparent substrate.
7. a kind of white area source according to claim 1, it is characterised in that:Described quantum dot film is comprising uniform point
It is the Lan Peihuang of cloth, green with the purplish red or red film with the double-colored quantum dot of ultramarine, or bluish-green red trichromatism quantum dot film.
8. comprising the liquid crystal display of the white area source described in any one of claim 1 to 7, it is characterised in that:Described is white
The front of color area source is provided with liquid crystal display panel.
9. liquid crystal display according to claim 8, it is characterised in that:Described liquid crystal display panel includes layer successively
Folded the first layer of polarizer, interior transparency carrier, pixel driver layer, layer of liquid crystal molecule, ITO electrode layer, redgreenblue ink layer,
Outer transparency carrier and the second layer of polarizer;Described interior transparency carrier and outer transparency carrier is hard transparent substrate or flexible saturating
Bright substrate.
10. liquid crystal display according to claim 8, it is characterised in that:Described liquid crystal display panel is included successively
First layer of polarizer of stacking, interior transparency carrier, pixel driver layer, layer of liquid crystal molecule, ITO electrode layer, outer transparency carrier and the
Two layer of polarizer;Include on described quantum dot film and replace and regular right one by one with the sub-pixel area of described pixel driver layer
Red quantum dot area, green quantum dot region and the blue quantum dot region answered;Also include on described quantum dot film with it is described
The corresponding color isolated area of alternatively non-transparent district of the pixel cell of pixel driver layer;Described interior transparency carrier and outer transparency carrier is equal
It is hard transparent substrate or flexible transparent substrate.
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CN109031778A (en) * | 2018-07-18 | 2018-12-18 | 惠科股份有限公司 | Light emitting component, method of manufacturing the same, and display device |
CN109445174A (en) * | 2019-01-02 | 2019-03-08 | 京东方科技集团股份有限公司 | A kind of display panel and preparation method thereof, display device |
WO2020073573A1 (en) * | 2018-10-11 | 2020-04-16 | Boe Technology Group Co., Ltd. | Display substrate, preparation method thereof, and display apparatus |
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Application publication date: 20170524 |