CN106706958A - Micromechanical silicon resonant beam accelerometer - Google Patents
Micromechanical silicon resonant beam accelerometer Download PDFInfo
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- CN106706958A CN106706958A CN201510775441.3A CN201510775441A CN106706958A CN 106706958 A CN106706958 A CN 106706958A CN 201510775441 A CN201510775441 A CN 201510775441A CN 106706958 A CN106706958 A CN 106706958A
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Abstract
The invention discloses a micromechanical silicon resonant beam accelerometer, which is processed and formed based on a micro electro mechanical system (MEMS), and is composed of a Pyrex7740# glass substrate, a silicon mass block, two resonant beams, four supporting beams, anchor points and electrode leads. The silicon structure is completely symmetrical vertically and horizontally, the inertial force applied to the mass block under effects of the acceleration is transferred to the resonant beams through a force-stress conversion structure, the axial mechanical stress of the beam is changed, due to the structural arrangement of the two beams, stresses in opposite directions can be ensured to be sensed, the resonant frequency of one beam is increased, and the resonant frequency of the other beam is decreased, and through detecting the resonant frequency difference between the two beams, acceleration measurement is realized. By adopting the unique force-stress conversion structure and the two-beam symmetrical structure, the manufacturing is simple, and the detection sensitivity and the anti-interference ability of the accelerometer can be improved effectively.
Description
Technical field
A kind of micro-mechanical silicon resonance beam accelerometer of the present invention, is related to the change of the mechanical resonant frequency by detecting beam to measure the resonance type accelerometer of acceleration.
Background technology
Silicon micro resonant sensor, it is that the base growth based on micro-electronic mechanical skill (MEMS) technique is got up, it is lightweight with small volume, it is low in energy consumption, certainty of measurement is high, good stability, easily batch production, directly export quasi- digital quantity, easily and the advantages of computer communication, it has also become an important development direction of microsensor.The core of resonant transducer is resonator (mechanical structure such as including beam, film, ring), and resonator is vibrated under the positive feedback closed-loop system control being made up of exciting and pick-up unit with the natural resonance frequency of its own.Measured physical quantity (power, pressure, acceleration etc.) can be changed the mechanism by certain and change the resonant frequency of resonator, and the change of detection resonant frequency is capable of achieving the measurement of measured physical quantity.One resonant frequency of Mechanics of Machinery structure is related to its mechanical stiffness, quality and damping, and in resonant microsensor, most common method is the rigidity for changing resonance structure, for micro-mechanical beam, exactly changes its axial stress.Resonance beam accelerometer is exactly that the inertia force formed using acceleration changes into the axial stress of the beam that shakes, so as to change the method for its resonant frequency to detect acceleration magnitude.Therefore, the transformation efficiency of inertia force-axial stress determines the sensitivity of accelerometer.Conventional minor resistant genes acceleration is in respect of two kinds of beam type and double-tone V shape.Beam type, makes simple, and using bending stress amplification principle, inertia force-axial stress transformation efficiency is high, but symmetry is poor, there is cross jamming, and is difficult to realize the error that differential output structure is caused with extraneous factors such as suppression common mode signal and temperature.Double-tone V shape, uses for reference from quartz vibration beam accelerometer, using differential output structure, but amplifies axial stress by lever principle, and inertia force-axial stress transformation efficiency is low, and sensitivity is not high.
The content of the invention
Shifted to new management mechanisms it is an object of the invention to provide a kind of axial stress of acceleration one, both Simplified flowsheet, reduce technology difficulty, acceleration detection sensitivity and antijamming capability higher is can guarantee that again.
To realize the purpose of the present invention, technical solution of the invention is to propose a kind of micro-mechanical silicon resonance beam accelerometer, it is to be processed based on micro-electronic mechanical skill, by siliceous gauge block, support beam, anchor point, glass substrate, contact conductor and resonance beam are constituted, its silicon structure is symmetrical up and down, the two ends of upper and lower two resonance beams are directly connected by the symmetrical support beam in left and right two, when the inertia force that mass is subject under acceleration effect, when being delivered in resonance beam by power-stress transmission structure, the resonance beam earth's axis is changed to mechanical stress, double resonance girder construction, double resonance beam is set each to experience rightabout stress, one resonant frequency of beam increases and the resonant frequency of another beam declines, it is poor by the resonant frequency for detecting double resonance beam, realize to acceleration analysis.
Described silicon resonance beam accelerometer, wherein, on a glass substrate, four support beam anchor points are divided into two groups：One group of support beam anchor point and another group of support beam anchor point, are defined by horizontal X line and vertical Y line, are symmetrical arranged up and down；
Four electrode anchor points and six contact conductors are also divided into two groups：One group of electrode anchor point and another group of electrode anchor point, one group of contact conductor and another group of contact conductor, are each defined by horizontal X line and vertical Y line, are symmetrical arranged up and down；
One group of contact conductor and another group of contact conductor, are positioned horizontally in the side up and down of glass substrate respectively；Second electrode lead, four electrode anchor points and the 5th contact conductor, from top to bottom on Y lines；
First electrode lead is electrically connected with the first support beam anchor point, second electrode lead is electrically connected with first electrode anchor point, 3rd contact conductor is electrically connected with second electrode anchor point, 4th contact conductor is electrically connected with the 4th support beam anchor point, 5th contact conductor is electrically connected with the 4th electrode anchor point, and the 6th contact conductor is electrically connected with the 3rd electrode anchor point；
Siliceous gauge block is in the central part of glass substrate, suspends, and its corner is respectively and fixedly connected with four support beam anchor points by four support beams；Between first, second support beam and first, second support beam anchor point connection end, also level is connected with the first resonance beam；And between the three, the 4th support beams and the three, the 4th support beam anchor point connection ends, also level is connected with the second resonance beam；
First, second electrode anchor point is placed in the upper and lower both sides of the first resonance beam, and the three, the 4th electrode anchor points are placed in the upper and lower both sides of the second resonance beam.
Described silicon resonance beam accelerometer, the support beam described in it is non-uniform beam, and parallel to resonance beam, positioned at the inner side of resonance beam, width is more than two times of resonance beam width to its smallest cross-sectional beam, and the support beam anchor point of left and right support beam is separated by an electrode anchor point.
Described silicon resonance beam accelerometer, its described one group of electrode anchor point is placed in the upper and lower both sides of double resonance beam, makes to form flat board or comb electric capacity between double resonance beam and its electrode anchor point setting up and down, realizes static excitation and capacitance detecting.
Described silicon resonance beam accelerometer, its described siliceous gauge block, resonance beam, support beam, anchor point are made using bulk silicon technological, and material is monocrystalline silicon or polysilicon；Contact conductor, is, in being formed in glass substrate, to be electrically connected by silica glass anode linkage and electrode anchor point by sputtering or evaporated metal.
Described silicon resonance beam accelerometer, its described glass substrate is Pyrex7740# glass substrates.
Micro-mechanical silicon resonance beam accelerometer of the present invention, using unique power-stress transmission structure, makes simple, and FEM Simulation and experimental result confirm to greatly improve acceleration detection sensitivity using this accelerometer.
Brief description of the drawings
Fig. 1 is micro-mechanical silicon resonance beam accelerometer structural representation of the present invention.
In figure：The siliceous gauge blocks 2,2a of 1-, 2b, 2c- support beam 3,3a, 3b, 3c- support beam anchor point 4- glass substrates 5,5a, 5b, 5c- electrode anchor point 6,6a, 6b, 6c, 6d, 6e- contact conductor 7,7a- resonance beam 8-X line 9-Y lines.
Specific embodiment
As shown in figure 1, micro-mechanical silicon resonance beam accelerometer of the present invention, is made up of siliceous gauge block 1, support beam 2, anchor point 3, Pyrex7740# glass substrates 4, contact conductor 6 and resonance beam 7.Wherein, in Pyrex7740# glass substrates 4, four support beam anchor points 3,3a, 3b, 3c are divided to for two groups：One group of support beam anchor point 3,3a, another group of support beam anchor point 3b, 3c, is defined by horizontal X line 8 and vertical Y line 9, is symmetrical arranged up and down.Four electrode anchor points 5,5a, 5b, 5c and six contact conductors 6,6a, 6b, 6c, 6d, 6e are also classified into two groups：One group of electrode anchor point 5,5a, another group of electrode anchor point 5b, 5c, one group of contact conductor 6,6a, 6b, another group of contact conductor 6c, 6d, 6e are each defined by horizontal X line 8 and vertical Y line 9, are symmetrical arranged up and down；One group of contact conductor 6,6a, 6b and another group of contact conductor 6c, 6d, 6e, are positioned horizontally in the side up and down of glass substrate 4 respectively；Contact conductor 6a, electrode anchor point 5,5a, 5b, 5c and contact conductor 6d, from top to bottom on Y lines 9.Contact conductor 6 is electrically connected with support beam anchor point 3, contact conductor 6a is electrically connected with electrode anchor point 5, and contact conductor 6b is electrically connected with electrode anchor point 5a, and contact conductor 6c is electrically connected with support beam anchor point 3c, contact conductor 6d is electrically connected with electrode anchor point 5c, and contact conductor 6e is electrically connected with electrode anchor point 5b.
Siliceous gauge block 1 is in the central part of glass substrate 4, suspends, and its corner is respectively and fixedly connected with support beam anchor point 3,3a, 3b, 3c by four support beams 2,2a, 2b, 2c.Between support beam 2,2a and support beam anchor point 3,3a connection ends, also level is connected with resonance beam 7；And between support beam 2b, 2c and support beam anchor point 3b, 3c connection ends, also level is connected with double resonance beam 7a.Electrode anchor point 5,5a is placed in, and about 7 both sides for resonance beam, and electrode anchor point 5b, 5c are placed in the upper and lower both sides of resonance beam 7a.
Four support beams 2,2a, 2b, 2c are non-uniform beams, its smallest cross-sectional beam is parallel to resonance beam 7,7a, and positioned at the inner side of resonance beam 7,7a, the width of non-uniform beam be resonance beam 7, more than 2 times of 7a width, left and right support beam anchor point 3,3a or left and right support beam anchor point 3b, 3c, are separated by an electrode anchor point 5a or electrode anchor point 5b.
Siliceous gauge block 1, support beam 2,2a, 2b, 2c, anchor point 3,3a, 3b, 3c, 5,5a, 5b, 5c, resonance beam 7,7a is made using bulk silicon technological, and material is monocrystalline silicon or polysilicon；Contact conductor 6,6a, 6b, 6c, 6d, 6e, is, in being formed in glass substrate 4, to be electrically connected by silica glass anode linkage and electrode anchor point 5,5a, 5b, 5c, support beam anchor point 3,3c by sputtering or evaporated metal.
Micro-mechanical silicon resonance beam accelerometer of the present invention, when in use, the inertia force that siliceous gauge block 1 is subject under acceleration effect, resonance beam 7 is delivered to by power-stress transmission structure, on 7a, change resonance beam 7, the axial mechanical stress of 7a, resonance beam 7 is set with resonance beam 7a symmetrical structures, can ensure when sensitive direction receives acceleration effect, resonance beam 7 and resonance beam 7a each experience rightabout stress, a resonant frequency for beam is set to increase and the decline of the resonant frequency of another beam, and when acceleration effect is received in non-sensitive direction, double resonance beam 7 and 7a each experience identical stress, the resonant frequency of resonance beam increases or reduces simultaneously simultaneously, acceleration analysis is realized by the resonant frequency difference for detecting double resonance beam 7 and 7a, and effectively inhibit cross jamming and other common-mode errors.
Claims (6)
1. a kind of micro-mechanical silicon resonance beam accelerometer, it is to be processed based on micro-electronic mechanical skill, by siliceous gauge block, support beam, anchor point, glass substrate, contact conductor and resonance beam are constituted, it is characterized in that, silicon structure is symmetrical up and down, two groups of two ends of double resonance beam are directly connected by the symmetrical support beam in left and right two, when the inertia force that mass is subject under acceleration effect, when being delivered on double resonance beam by the stress transmission structure of power one, change the axial mechanical stress of resonance beam, double resonance girder construction, double resonance beam is set each to experience rightabout stress, one resonant frequency of beam increases and the resonant frequency of another beam declines, it is poor by the resonant frequency for detecting double resonance beam, realize to acceleration analysis.
2. silicon resonance beam accelerometer as claimed in claim 1, it is characterised in that wherein, on a glass substrate, four support beam anchor points are divided into two groups：One group of support beam anchor point and another group of support beam anchor point, are defined by horizontal X line and vertical Y line, are symmetrical arranged up and down；
Four electrode anchor points and six contact conductors are also divided into two groups：One group of electrode anchor point and another group of electrode anchor point, one group of contact conductor and another group of contact conductor, are each defined by horizontal X line and vertical Y line, are symmetrical arranged up and down；
One group of contact conductor and another group of contact conductor, are positioned horizontally in the side up and down of glass substrate respectively；Second electrode lead, four electrode anchor points and the 5th contact conductor, from top to bottom on Y lines；
First electrode lead is electrically connected with the first support beam anchor point, second electrode lead is electrically connected with first electrode anchor point, 3rd contact conductor is electrically connected with second electrode anchor point, 4th contact conductor is electrically connected with the 4th support beam anchor point, 5th contact conductor is electrically connected with the 4th electrode anchor point, and the 6th contact conductor is electrically connected with the 3rd electrode anchor point；
Siliceous gauge block is in the central part of glass substrate, suspends, and its corner is respectively and fixedly connected with four support beam anchor points by four support beams；Between first, second support beam and first, second support beam anchor point connection end, also level is connected with first resonance beam；And between the three, the 4th support beams and the three, the 4th support beam anchor point connection ends, also level is connected with second resonance beam；
First, second electrode anchor point is placed in the upper and lower both sides of the first resonance beam, and the three, the 4th electrode anchor points are placed in the upper and lower both sides of the second resonance beam.
3. silicon resonance beam accelerometer as claimed in claim 1 or 2, it is characterized in that, described support beam is non-uniform beam, its smallest cross-sectional beam is parallel to resonance beam, positioned at the inner side of resonance beam, width is more than two times of resonance beam width, and the support beam anchor point of left and right support beam is separated by an electrode anchor point.
4. silicon resonance beam accelerometer as claimed in claim 2, it is characterised in that one group of electrode anchor point
The upper and lower both sides of the resonance beam that is placed in, make to form flat board or comb electric capacity between resonance beam and its electrode anchor point setting up and down, realize static excitation and capacitance detecting.
5. silicon resonance beam accelerometer as claimed in claim 2, it is characterised in that the siliceous gauge block, resonance beam, support beam, anchor point are made using bulk silicon technological, and material is monocrystalline silicon or polysilicon；Contact conductor, is, in being formed in glass substrate, to be electrically connected by silica glass anode linkage and electrode anchor point by sputtering or evaporated metal.
6. silicon resonance beam accelerometer as claimed in claim 1 or 2, it is characterised in that the glass substrate, is Pyrex7740# glass substrates.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510775441.3A CN106706958A (en) | 2015-11-15 | 2015-11-15 | Micromechanical silicon resonant beam accelerometer |
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| CN201510775441.3A CN106706958A (en) | 2015-11-15 | 2015-11-15 | Micromechanical silicon resonant beam accelerometer |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108508234A (en) * | 2018-03-05 | 2018-09-07 | 清华大学 | Orthogonal Electrostatically suspended accelerometer sensitive structure |
| CN108519498A (en) * | 2018-03-08 | 2018-09-11 | 北京航天控制仪器研究所 | A kind of self-adapting closed loop measuring system of Micromachined Accelerometer Based on Resonant Principle |
| CN109883602A (en) * | 2019-03-13 | 2019-06-14 | 中国电子科技集团公司第四十九研究所 | A kind of self compensation silicon micro-resonance type presser sensor chip based on SOI |
| CN109883603A (en) * | 2019-03-13 | 2019-06-14 | 中国电子科技集团公司第四十九研究所 | A kind of silicon micro-resonance type presser sensor chip resonator based on SOI |
| CN110940866A (en) * | 2019-11-29 | 2020-03-31 | 中国科学院电子学研究所 | Sensitivity adjustable resonance miniature electric field sensor |
| CN111960374A (en) * | 2020-06-05 | 2020-11-20 | 东南大学 | PT symmetrical vertical movement micro-electro-mechanical system |
| CN113063529A (en) * | 2021-03-19 | 2021-07-02 | 中国计量大学 | Micromechanical resonant pressure sensor and manufacturing method thereof |
| CN116754107A (en) * | 2023-08-23 | 2023-09-15 | 清华四川能源互联网研究院 | High-sensitivity resonant pressure sensor with amplifying structure and signal conditioning method |
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2015
- 2015-11-15 CN CN201510775441.3A patent/CN106706958A/en not_active Withdrawn
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108508234A (en) * | 2018-03-05 | 2018-09-07 | 清华大学 | Orthogonal Electrostatically suspended accelerometer sensitive structure |
| CN108508234B (en) * | 2018-03-05 | 2019-09-17 | 清华大学 | Orthogonal Electrostatically suspended accelerometer sensitive structure |
| CN108519498A (en) * | 2018-03-08 | 2018-09-11 | 北京航天控制仪器研究所 | A kind of self-adapting closed loop measuring system of Micromachined Accelerometer Based on Resonant Principle |
| CN108519498B (en) * | 2018-03-08 | 2020-09-18 | 北京航天控制仪器研究所 | Self-adaptive closed-loop measurement system of resonant accelerometer |
| CN109883602A (en) * | 2019-03-13 | 2019-06-14 | 中国电子科技集团公司第四十九研究所 | A kind of self compensation silicon micro-resonance type presser sensor chip based on SOI |
| CN109883603A (en) * | 2019-03-13 | 2019-06-14 | 中国电子科技集团公司第四十九研究所 | A kind of silicon micro-resonance type presser sensor chip resonator based on SOI |
| CN110940866A (en) * | 2019-11-29 | 2020-03-31 | 中国科学院电子学研究所 | Sensitivity adjustable resonance miniature electric field sensor |
| CN111960374A (en) * | 2020-06-05 | 2020-11-20 | 东南大学 | PT symmetrical vertical movement micro-electro-mechanical system |
| CN111960374B (en) * | 2020-06-05 | 2023-10-03 | 东南大学 | PT symmetrical vertical micro electro mechanical system |
| CN113063529A (en) * | 2021-03-19 | 2021-07-02 | 中国计量大学 | Micromechanical resonant pressure sensor and manufacturing method thereof |
| CN116754107A (en) * | 2023-08-23 | 2023-09-15 | 清华四川能源互联网研究院 | High-sensitivity resonant pressure sensor with amplifying structure and signal conditioning method |
| CN116754107B (en) * | 2023-08-23 | 2023-10-20 | 清华四川能源互联网研究院 | High-sensitivity resonant pressure sensor with amplifying structure and signal conditioning method |
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