CN106688099A - Variable resolution pixel - Google Patents
Variable resolution pixel Download PDFInfo
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- CN106688099A CN106688099A CN201580048344.2A CN201580048344A CN106688099A CN 106688099 A CN106688099 A CN 106688099A CN 201580048344 A CN201580048344 A CN 201580048344A CN 106688099 A CN106688099 A CN 106688099A
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- storage region
- photoelectric sensor
- time
- pixel
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Classifications
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
- H04N13/20—Image signal generators
- H04N13/204—Image signal generators using stereoscopic image cameras
- H04N13/207—Image signal generators using stereoscopic image cameras using a single 2D image sensor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/06—Systems determining position data of a target
- G01S17/08—Systems determining position data of a target for measuring distance only
- G01S17/32—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated
- G01S17/36—Systems determining position data of a target for measuring distance only using transmission of continuous waves, whether amplitude-, frequency-, or phase-modulated, or unmodulated with phase comparison between the received signal and the contemporaneously transmitted signal
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
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- G01S17/894—3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
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- G01S3/00—Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received
- G01S3/78—Direction-finders for determining the direction from which infrasonic, sonic, ultrasonic, or electromagnetic waves, or particle emission, not having a directional significance, are being received using electromagnetic waves other than radio waves
- G01S3/781—Details
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- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4816—Constructional features, e.g. arrangements of optical elements of receivers alone
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
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- G01S7/4912—Receivers
- G01S7/4913—Circuits for detection, sampling, integration or read-out
- G01S7/4914—Circuits for detection, sampling, integration or read-out of detector arrays, e.g. charge-transfer gates
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- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
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- G01S7/4915—Time delay measurement, e.g. operational details for pixel components; Phase measurement
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14607—Geometry of the photosensitive area
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14643—Photodiode arrays; MOS imagers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14806—Structural or functional details thereof
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- H04N23/60—Control of cameras or camera modules
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- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
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- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Remote Sensing (AREA)
- Radar, Positioning & Navigation (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Computer Networks & Wireless Communication (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Optical Radar Systems And Details Thereof (AREA)
Abstract
A photosensor having a plurality of light sensitive pixels each of which comprises a light sensitive region and a plurality of storage regions for accumulating photocharge generated in the light sensitive region, a transfer gate for each storage region that is selectively electrifiable to transfer photocharge from the light sensitive region to the storage region, and an array of microlenses that for each storage region directs a different portion of light incident on the pixel to a region of the light sensitive region closer to the storage region than to other storage regions.
Description
Background technology
Camera generally includes photoelectric sensor, and (CMOS is partly led for such as CCD (charge-coupled image sensor) or CMOS
Body) photoelectric sensor, thereon, come free camera imaging scene light during the exposure cycle of camera by the optics of camera
Device focuses on to obtain the image of the scene.Photoelectric sensor generally includes the array of the row and column of light sensitive pixel, photaesthesia
Pixel record is focused on light on the photosensor by camera optics.The amount of the light that pixel is recorded is determined and is used for
The image of scene is provided.
A pixel in photoelectric sensor is imaged on the region of the scene in pixel by accumulation from optics
The positive or negative electric charge that electron-hole that incident light is generated within the pixel is occasionally provided is recording the incident light.Electron-hole
The electric charge that electronics or hole in idol is provided is commonly known as " optical charge ".The light that electron-hole occasionally can include within the pixel
Generate in the depletion region of electric diode, and electronics or hole are transferred to the memory block for adjoining photodiode of pixel.Will
Voltage (being alternatively referred to as " transmission voltage ") is applied to conduction " transmission " grid that is covered on memory block by electronics or hole
Memory block is transferred to from photodiode.The optical charge accumulated in the memory block of the pixel in photoelectric sensor is converted into electricity
Pressure, and the one group of voltage provided by pixel can be used for the image of generation scene.This group of voltage that photoelectric sensor is provided
It is referred to alternatively as " frame " of photoelectric sensor.The doped structure of included semi-conducting material determines photoelectric transfer in photoelectric sensor
Electronics or hole that pixel accumulation in sensor is generated by incident light.Generally pixel accumulation comes from the electricity of electron-hole coupling
Son (conventionally be also referred to as photoelectron) is recording incident light.
The time for exposure of camera is typically controllable so that given image-forming condition (such as phase residing when being imaged for scene
Available light in the focal length and scene of machine optics), the pixel record in the photoelectric sensor of camera be enough to provide scene
The light of the amount of gratifying image.For example, for the enough light of the pixel record in photoelectric sensor providing faint illumination
The gratifying image of scene, camera can advantageously be controlled to be captured from scene during the relatively long time for exposure
Light.In order to bright illumination scene imaging, the relatively short time for exposure is probably enough.
Some specific purposes cameras can work under the special constraint for the time for exposure.For example, the flight time (TOF) three
Dimension (3D) scope camera captures the range image of the scene of its imaging.Range image provides the distance to the feature in scene.Phase
How long machine so comes and goes cost come in the scene for determining imaging by determining that light returns camera from camera to feature
Feature distance.Two-way time can by launch light pulse come illuminate scene and determine by feature reflected it is light emitted
Light in pulse travels to feature and returns camera how long to spend to determine from camera.Camera can be in multiple different exposures
Between in each during record in light emitted pulse from scene return to the light of camera to capture for determining round when
Between data.Time for exposure can be required that satisfaction is directed to the relatively harsh constraint of the duration of each of which and they are each
From the timing of the launch time relative to light pulse.
The duration of camera exposure time is generally dependent on the pixel in the photoelectric sensor of camera to the quick of incident light
Sensitivity.It is next less than the photoelectric sensor using the pixel with relatively low lightsensitivity is conducive to for the intensity of the light from scene
Luminous intensity to scene imaging, is typically used for capturing this including the photoelectric sensor of the pixel with higher lightsensitivity
The gratifying image of scape.For the pixel sensitivity of incident light is typically with the size increase of the photodiode in pixel
Increase.For the given time for exposure, the pixel with larger photodiode is compared with the pixel with less photodiode
Gather more optical charges.Can be therefore, it is possible to than including there is less photoelectricity including the photoelectric sensor of bigger photodiode
The gratifying image of scene is provided under the lower luminous intensity of the camera of the pixel of diode.However, with the photoelectricity of camera
The size of the photodiode in sensor increases, and the spatial resolution of photoelectric sensor and its image for producing reduce.
The content of the invention
The one side of embodiments of the invention is related to provide a kind of photoelectric sensor, hereinafter also referred to as " multi-mode photoelectricity
Sensor ", it includes thering is the spatial resolution controlled by the voltage for being applied to pixel.In one embodiment, each
" multi-mode pixel " includes photo sensitive area (the such as photoelectricity manufactured using suitable technology (such as CMOS or CCD technologies)
Diode or photogate).Each photo sensitive area is associated to accumulate in the light sensitive area with multiple optical charge storage regions
The optical charge generated in domain.Each optical charge storage region is related to the transmission grid of its own and at least one lenticule
Connection.At least one lenticule being associated with given storage region is directed to the light being incident on lenticule in photo sensitive area
Compared with other storage regions to pixel closer to the region of given storage region, in this region photo sensitive area is by light
It is converted into electron-hole idol.Hereinafter, in the description, the photo sensitive area of pixel be conveniently assumed to be photoelectricity two to explain
Pole pipe.
When essentially identical suitable transmission voltage is simultaneously applied to the transmission grid of all pixels, transmission voltage exists
The electric field generated in photodiode is used for the photoelectricity that will in the photodiode be generated by the light being incident on given lenticule
Lotus is only transferred to the storage region being associated with the lenticule substantially.Each storage region is associated in response to being incident on its
The amount of the light on lenticule and with incident other lenticules within the pixel on light amount substantially independently gathering photoelectricity
Lotus.It is multiple less pixels that therefore pixel works, and alternatively, the quantity of less pixel is equal to lenticular quantity.It is less
Pixel there is the size for reducing compared with the primary size of pixel, while with bringing improved spatial resolution, spatial discrimination
Rate is determined by lenslet dimension and the transmission voltage for applying substantially.When applying identical is worked in voltage is transmitted to the institute of pixel
When having transmission grid, pixel is referred to alternatively as being operated under high spatial resolution pattern.
When transmission voltage is applied to only one transmission grid, associated storage region is received from photodiode
Nearly all region optical charge, therefore pixel operation is single, not segmented pixel, and it has basic by its primary chi
The spatial resolution of very little determination.When the only one transmission grid applied in transmission voltage to pixel is worked in, pixel can be claimed
Under to be operated in low spatial resolution pattern.According to an embodiment of the invention pixel operation is applied to incessantly in transmission voltage
One its transmission grid but less than its all transmission grid when, pixel is referred to alternatively as being operated under intermediate space resolution model.
In an embodiment of the present invention, photodiode and lenticule are configured to present with regard to generally within the pole of photoelectricity two
The center of pipe and rotationally symmetrical perpendicular to the axle of photoelectric sensor.In one embodiment, it is rotationally symmetrical with more than or
Exponent number equal to 2.Alternatively, rotational symmetric exponent number is more than or equal to 4.In an embodiment of the present invention, multi-mode pixel bag
Include two or more storage regions.In one embodiment, multi-mode pixel includes four storage regions.
The one side of embodiments of the invention is related to provide a kind of camera, and the camera includes photoelectric sensor and control
Device, the voltage of the transmission grid of the pixel that controller control is applied in photoelectric sensor is controlling photoelectric sensor and thus
Camera spatial resolution.In an embodiment of the present invention, controller comes in response to available light in the scene of camera imaging
Control voltage.Alternatively, controller controls photoelectric sensor and transmission voltage to determine the intensity of the light for arriving at each pixel
And the contrast image (hereinafter also referred to as picture) of capturing scenes.In one embodiment, camera is TOF-3D cameras, and
And controller control photoelectric sensor and transmission voltage for the range image suitable for capturing scenes (and alternatively, catching
Obtain the picture of scene) time for exposure camera is switched on an off.
Under discussion, unless otherwise specified, the condition or relation of one or more features of embodiments of the invention are changed
Characteristic such as " substantially " and the adverbial word of " about " should be understood that the condition or characteristic are defined as the embodiment institute
What is be intended to applies within the acceptable range of tolerable variance of operation of the embodiment.Unless otherwise instructed, this specification and/or right
Word "or" in claim is considered as inclusive "or" rather than exclusiveness or, and indicating in its projects for combining
At least one or its combination.
This general introduction is provided to introduce following some concepts further described in detailed description in simplified form.This
General introduction is not intended as identifying the key feature or essential feature of claimed subject, is intended to be used to limit claimed
The scope of theme.
Description of the drawings
The non-limit of embodiments of the invention is described below with reference to the accompanying drawing listed after this paragraph appended by here
Property example processed.The identical feature occurred in more than a width accompanying drawing is generally in its all accompanying drawing for occurring all with identical number
Word is marking.Mark represents the mark that the icon of a given feature of the embodiments of the invention in accompanying drawing or other figures are indicated
Note can be used for reference to the given feature.The size of the component shown in accompanying drawing and be characterized in that for convenience and clearly appear from and
Select, and show not necessarily to scale.
Figure 1A is schematically shown according to an embodiment of the invention including the multi-mode light electric transducer of multi-mode pixel；
Figure 1B is schematically shown according to an embodiment of the invention when all transmission grids transmission voltage in pixel
The equipotential field wire in multi-mode pixel during charging shown in Figure 1A；
Fig. 1 C-1F are schematically shown according to an embodiment of the invention when different in the transmission grid in pixel
The equipotential field wire in multi-mode pixel when transmission grid is charged with transmission voltage shown in Figure 1A；
Fig. 2A schematically shows to be included according to an embodiment of the invention to scene imaging with the areal map of capturing scenes
The TOF-3D cameras of the multi-mode light electric transducer of picture；
TOF-3D phases during the imaging that Fig. 2 B-2E illustrate the scene for illustrating in fig. 2 according to an embodiment of the invention
The operation of the time for exposure of the multi-mode light electric transducer in machine and timing relationship；
Fig. 2 F illustrate the range image of the scene for being used to provide for being illustrated in Fig. 2A according to an embodiment of the invention
The figure of the data that TOF-3D cameras are captured；And
Fig. 3 is schematically shown according to an embodiment of the invention including the smart phone of multi-mode light electric transducer.
Specific embodiment
Figure 1A schematically shows the pixel 30 for including being formed in suitable substrate 31 according to an embodiment of the invention
The top view of the simplification of a part for the multi-mode light electric transducer 20 of (also referred to as multi-mode pixel 30).Multi-mode photoelectric sensing
Device 20 can be CCD or CMOS photoelectric sensors, and can as an example be assumed to be CMOS photoelectric sensors, its accumulation from
The even photoelectron of electron-hole that the light being incident in the photodiode (see below) that pixel 30 includes is generated with
Record is incident on the amount of the light in pixel.The feature of the pixel 30 illustrated in Figure 1A and subsequent accompanying drawing is not necessarily in pixel
At same depth.Accompanying drawing shows that schematic projection of the feature on the upper surface of multi-mode light electric transducer 20 (is assumed to be
In the page of accompanying drawing), it indicates the opposed lateral positions of each feature.
Each multi-mode pixel 30 alternatively includes photodiode 32 and four photoelectricity sub-storage areas 41,42,43
With 44.Transmission grid 50 covers each storage region 41,42,43 and 44, and alternatively the one of covering photodiode 32
Individual zonule.Each component of pixel 30 is optionally formed on the (not shown) of silicon substrate 31 of severe n doping, in the silicon substrate 31
The upper p doped layer (not shown) for forming extension.Photodiode 32 may include the n doped regions formed in p doped epitaxial layers
Junction at generate depletion region.Storage region 41,42,43 and 44 can be each several part of the n doped channels buried.Covering is deposited
The transmission grid 50 in storage area domain 41,42,43 and 44 using any one in various suitable conductive materials (such as metal) or
Polysilicon is forming.Each pixel 30 may include reading circuit 34, and reading circuit 34 is configured to provide for each is deposited
The measurement of the amount of the optical charge gathered in storage area domain 41,42,43 and 44, the amount is independently of product in other storage regions of pixel 30
The amount of poly- optical charge.Although photodiode 32 is indicated as rectangle, according to an embodiment of the invention multi-mode
Photodiode in pixel can have shape in addition to a rectangle.As an example, photodiode can have than rectangular
There are polygonal shape, or circular or irregular shape.
The array of lenticule 60 covers each several part of photodiode 32.Alternatively, microlens array is included for each
The lenticule 60 of individual given storage region 41,42,43 and 44, the lenticule 60 guides the light being incident on lenticule to photoelectricity
Diode 32 with to the region compared with other storage regions closer to given storage region.In figure ia, in lenticule 60
Star icon 62 represents the focal zone of the lenticule 60 that lenticule light be directed to.In an embodiment of the present invention, such as Figure 1A
Shown in, the array of lenticule 60 is advantageously configured to so that array covers most photodiode 32 and can be attached
Plus ground covers the region outside photodiode 32.Alternatively, all of lenticule 60 is circular, with identical diameter,
And it is aligned to the rotationally symmetrical configuration of quadravalence.
In an embodiment of the present invention, (not shown in figure ia) control of controller is applied to substrate 31 and transmission grid 50
Voltage so that multi-mode light electric transducer 20 switched into ON (opening) and OFF (pass), and by pixel 30 in response to incident photoproduction
Into photoelectron guide to the selected storage region 41 of pixel ..., 44.In an embodiment of the present invention, controller applies
Voltage VONSo that multi-mode light electric transducer 20 to be switched to out, and applied voltage VOFFTo substrate 31 with by multi-mode light fax
Sensor 20 switches to pass.
VOFFIt is to be applied to the transmission voltage of transmission grid 50 on the occasion of bigger voltage than controller, and is being applied to
During substrate 31, the photoelectron in multi-mode pixel 30 is leaked to substrate 31, be not accumulated in storage region 41 ..., appointing in 44
What in one, and it is dropped.VONIt is the transmission voltage " V that transmission grid 50 is applied to than controllerG+" on the occasion of little voltage,
It is alternatively a public ground voltage.When controller applies VONTo substrate 31 and apply transmit voltage VG+Give pixel 30
Given storage region 41 ..., 44 associated transmission grid 50 when, the photoelectron generated in photodiode 32 is not leaked to base
Plate 31.Transmission voltage VG+Electric field is generated in photodiode 32, the electric field, should to the photoelectron applying power in photodiode
Power causes photoelectron towards the storage region drift being associated with transmission grid and is being accumulated in wherein.By by substrate 31
It is maintained at voltage VONAnd optionally apply transmission voltage VG+To grid 50, the operable multi-mode light electric transducer of controller
20 including the camera of multi-mode light electric transducer with to provide the time for exposure of different order and type, and provides use for camera
In the different spatial resolution of the image of capturing scenes.
As an example, Figure 1B schematically shows the multi-mode pixel 30 being operated under high spatial resolution pattern, in height
In spatial resolution pattern, controller identical VG+Simultaneously to charging including all transmission grids 50 within the pixel.Transmission
The shade of grid 50 indicates that transmission grid 50 is transmitted voltage VG+Charge.The transmission voltage that each transmission grid 50 charges is existed
Electric field is generated in photodiode 32, photoelectron is attracted to and is deposited by the electric field from the part for adjoining memory block of photodiode 32
Storage area.When being charged to the transmission grid 50 of storage region with transmission voltage, storage region 41,42,43,44 gathers photoelectricity from it
A part for the photodiode 32 of son is referred to alternatively as " collecting zone " of photodiode.Storage region 41,42,43,44
Outline line 70 in collecting zone represents the equipotential face of generated electric field, and hereinafter also referred to as " equipotential surface " or " etc.
Gesture line ".Equipotential surface 70 of the direction of an electric field at a certain position in photodiode 32 at the position, and electric-field strength
Spend and be inversely proportional to the distance between each equipotentiality at the position." field " arrow 71 in Figure 1B schematically indicates the transmission being electrically charged
The direction of the electric field generated at each position of grid 50 in photodiode 32.
For the storage region 41 illustrated in Figure 1B ..., 44, transmission grid 50 and with identical transmit voltage VG+
Charge while grid 50 such configuration to transmitting, the corresponding collecting zone of storage region 41,42,43,44 is with basic
Identical shapes and sizes, and the electric field in the collecting zone for adjoining is substantially mutual mirror image.Given storage region 41,
42nd, 43,44 collecting zone includes being located at the photodiode 32 of the lower section of lenticule 60 being associated with the given storage region
Part.In addition, the collecting zone of given storage region may include not covered by associated lenticule for photodiode 32
Lid is but closer to the associated lenticular part compared with the lenticule to other storage regions.The bag of photodiode 32
Include the associated lenticule closer to the given storage region in the collecting zone of given storage region 41,42,43,44
60 region is referred to alternatively as the outer peripheral areas of collecting zone.
The photoelectron that each storage region 41,42,43,44 is gathered from its associated collecting zone is by covering
The lenticule 60 of collecting zone is guided to the light and the photogenerated being incident in the outer peripheral areas of collecting zone of collecting zone.So
And, as mentioned above, and indicated by the configuration of the lenticule 60 by shown in Figure 1A and 1B, lenticule 60 covers pixel
The region being located in 30 beyond photodiode 32.The lenticule 60 being associated with given storage region 41,42,43,44 can be from
Collect light and light be directed to the collecting zone in the region of the collecting zone for being significantly greater than storage region of pixel 30.Each storage
Region 41,42,43,44 and its associated lenticule 60 being included in pixel 30 can therefore as less than pixel 30 and have
There is the independent pixel of the basic size by associated lenticular size to determine.
Fig. 1 C schematically show the pixel 30 being operated under low spatial resolution pattern, in low spatial resolution pattern
In, controller applied voltage VONTo substrate 31 and apply transmit voltage VG+Only arrive the transmission grid being associated with storage region 41
Pole 50.The transmission grid 50 being associated with storage region 42,43,44 can be unfixed or be charged to VON.It is applied in
Give the transmission voltage V of the associated transmission grid 50 of storage region 41G+Electric field is generated, the electric field is used for will be in photodiode
The photoelectron that the electron-hole that almost any place in 32 is generated occasionally is provided is moved to storage region 41.Equipotential lines 70 is indicated
The configuration of the electric field for being generated, and field arrow 71 schematically indicates the electric field at each position in photodiode 32
Direction.Under low-resolution mode, multi-mode pixel 30 has the basic spatial resolution determined by the primary size of pixel,
And the intensity of the light being incident in the pixel may be in response to in storage region 41 gather alternatively by reading circuit 34
The measurement of the photoelectronic amount for being provided is determining.
It is noted that when under the low spatial resolution pattern that work schematically shows in fig. 1 c, multi-mode pixel 30
The spatial discrimination of about 4 times of the spatial resolution difference provided relative to the pixel being operated under high spatial resolution pattern is provided
Rate.However, for identical incident intensity and identical time for exposure, the pixel 30 being operated under low spatial resolution pattern
The photoelectronic storage region generated in for storing photodiode 32 compared with pixel operation is under high resolution model
41st, about 4 times of photoelectron is gathered in 42,43 or 44.Therefore, if gather in storage region 41,42,43 or 44 it is specific most
The photoelectron of smallest number has the feature of the favourable amplitude of shot noise, then pixel 30 provides ratio and is operated under high resolution model
Pixel provide minimum of a value little about four times of intensity incident intensity minimum number.As a result, work as being used in low illumination
Under the conditions of to scene imaging when, multi-mode light electric transducer 20 can be advantageously operated under low spatial resolution pattern.
Fig. 1 D, 1E and 1F schematically show pixel 30 and are operated in similar to the low spatial resolution pattern illustrated in Fig. 1 C
Low spatial resolution pattern under, but wherein transmit voltage VG+ and be applied to and be associated with storage region 42,43 and 44 respectively
Transmission grid 50.
Used as numerical example, multi-mode light electric transducer 20 may include by the spacing table less than or equal to about 15 μm (micron)
The multi-mode pixel 30 levied.Each multi-mode pixel 30 may include the photoelectricity two with the maximum transverse size for being equal to about 8 μm
Pole pipe 32.For the pixel 30 with about 10 μm or about 7 μm of spacing, photodiode 32 can respectively have about 6 μm or 4.5 μm
Maximum transverse size.Embodiments in accordance with the present invention, the fill factor, curve factor of multi-mode pixel can be equal to or greater than about 70%.
Fig. 2A schematically show include according to an embodiment of the invention range image for capturing scenes 130 with
The TOF-3D cameras 120 of the multi-mode light electric transducer 20 that the multi-mode light electric transducer 20 illustrated in Figure 1A -1F is similar to.
Scape 130 is shown schematically with object 131 and 132.
The TOF-3D cameras 120 for highly diagrammatically being represented include lens combination, and lens combination is by multi-mode photoelectricity
The lens 121 of the imaging of scene 130 are represented on sensor 20.Alternatively, TOF-3D cameras include light source 126, such as
The array of laser or LED or laser and/or LED, its available alternatively IR (infrared) light pulse controls to carry out scene 130
Illumination.The impulse ejection and multi-mode light electric transducer 20 of the control light source 126 of controller 124 is anti-by the feature institute in scene
The light of the light pulse launched from light source 126 penetrated carrys out the imaging to scene 130.Alternatively applied voltage VON of controller 124
Respectively multi-mode light electric transducer switched on an off with VOFF.Controller optionally apply transmit voltage VG+ to
From different optical charge storage regions 41,42,43 and 4 be associated transmission grid 50 with during the different time for exposure many
Scene 130 is imaged on pattern photoelectric sensor 20.The different time for exposure is launched light pulse with to field relative to light source 126
The time of the illumination of scape 130 carrys out timing, to capture data and capturing scenes for determining to the distance of the feature in scene 130
Range image.
In an embodiment of the present invention, in order to capture data and thus capture the distance of feature in scene 130, control
Device processed 124 open multi-mode light electric transducer 20 and control light source 126 with Fig. 2A with the rectangular pulse 141 of a row 140 come
The row light pulse for schematically showing to scene 130 illuminating.Feature in scene 130 is by from the light pulse row launched
140 light is reflected back TOF-3D cameras 120 in the form of reflection light pulse row.As an example, Fig. 2A schematically shows reflection
Light pulse row 145 and 147 include respectively the light pulse 146 and 148 reflected by feature A and B of object 132 and 131 respectively.Instead
Each the reflection light pulse (reflection light pulse 146 or light pulse in such as reflection light pulse row 145 penetrated in light pulse row
Reflection light pulse 148 in row 147) with the pulse shape and width essentially identical with the light pulse 141 of transmitting.Same reflection
The repetition of the light pulse 141 of the transmitting in the repetition period of the reflected impulse in light pulse row and the light pulse row 140 launched
Cycle is essentially identical.Light pulse 141,146 and 148 can have pulsewidth " τ " alternatively between about 10 to 30ns (nanosecond).
After predetermined delay after each light pulse launched 141 is launched, controller 124 applies a voltage and matches somebody with somebody
Multi-mode light electric transducer 20 is put to determine the time for exposure of multi-mode light electric transducer 20, it is many during the time for exposure
Pattern photoelectric sensor 20 records the light by the feature in scene 130 from the light pulse of the light pulse reflection of transmitting.At one
In embodiment, controller 124 to the transmission grid 50 being associated with least one storage region 41,42,43 or 44 applies transmission
Voltage VG+, and to substrate 31 (Figure 1A) applied voltage V of multi-mode light electric transducer 20ONAnd VOFFTo determine the time for exposure
Timing and duration.During the time for exposure, by the photogenerated being incident in the pixel 30 of multi-mode light electric transducer 20
Photoelectron floats to (the transmission grid 50 of the storage region transmission electricity of at least one storage region 41,42,43 or 44 of pixel
Pressure charges) and gathered wherein.
Spy in the scene 130 for freely to be imaged in the given pixel that given pixel 30 is recorded during the time for exposure
Levy reflection light pulse from the reflection of light pulse 141 of transmitting light amount substantially with the convolution of time for exposure and reflection light pulse into
Ratio.The convolution be transmitting light pulse 141 launch time and the time for exposure between predetermined delay, away from the feature of imaging
The distance of TOF-3D cameras 120 and the function of the shape of reflection light pulse and time for exposure.
In an embodiment of the present invention, controller 124 controls multi-mode light electric transducer 20 to record three kinds of different types
Time for exposure during light in the reflection light pulse that reflected by the feature of scene 130.Figure in Fig. 2 B, Fig. 2 C and Fig. 2 D
181st, 182 and 183 schematically showing for the time for exposure of light pulse that light source 126 launched and pixel 30 is shown respectively.This
A little figures illustrate the time for exposure of three types and the sequential relationship between the light pulse 141 of time for exposure and transmitting.
The Figure 181 illustrated in Fig. 2 B shows the time for exposure of the first type, and the time for exposure alternatively includes two
The continuous composition time for exposure, and be referred to as " double-exposure time ".This schematically shows and (be labeled as along figure line 191
" illumination ") time T0Place transmitting transmitting light pulse 141, along figure line 192 by controller 124 be applied to storage region 41,
42nd, the voltage of 43 or 44 transmission grid 50, and it is applied to multi-mode photoelectric sensing along figure line 193 (being labeled as " substrate ")
The voltage of the substrate 31 of device 20.In order to gather photoelectron during the compound time for exposure, controller 124 alternatively will be along figure line
Transmission voltage V shown in 192G+It is applied only to the transmission grid 50 being associated with the storage region 41 of pixel 30.Transmission voltage VG+
Can be applied in before the transmitting of light pulse 141.Illustration 195 in Fig. 2 B schematically shows pixel 30 and deposits with pixel
The associated transmission grid 50 in storage area domain 41, distinguishes graphically to indicate to transmit voltage V by shadeG+It only is applied to photoelectricity
The transmission grid 50 of lotus storage region 41.Figure line 192 is also marked with 41-VG+With the transmission grid for indicating there was only storage region 41
50 by with transmission voltage VG+Charge.Forward direction substrate 31 applied voltage V of the controller 124 in the transmitting of light pulse 141OFF.As long as
VOFFIt is kept on the substrate 31, incident light institute on the photodiode 32 of the pixel 30 in multi-mode light electric transducer 20
Any photoelectron for producing all drains to substrate 31 and photoelectron is not by any memory block of the pixel in multi-mode photoelectric sensing
Gather in domain.
In time delay T1Afterwards, controller 124 is by voltage VON(figure line 193) is applied to multi-mode light electric transducer 20
Substrate 31 with record the double-exposure time the first composition time for exposure during light, subsequently in time delay T4Place records again double
Light during the second composition time for exposure of time for exposure.Alternatively, the composition time for exposure is with the light pulse 141 for being equal to transmitting
Duration duration, for example, T4- T16ns can be equal to or greater than about and less than or equal to about 30ns.In controller
124 apply VONTo substrate 31 each composition time for exposure during, reflect spontaneous emission light pulse 141 light pulse in light
The photoelectron that any place in the photodiode 32 of pixel 30 is generated floats to the storage region 41 of pixel and accumulates wherein
It is poly-.The field for freely to be imaged in the given pixel 30 that the storage region 41 of given pixel 30 is gathered during the double-exposure time
Feature in scape 130 from transmitting light pulse 131 reflection light pulse light amount substantially with double-exposure time and reflected light arteries and veins
The convolution of punching is proportional.In an embodiment of the present invention, controller 124 controls multi-mode light electric transducer 20 with double-exposure
Between during for each the accumulation photoelectron in the multiple light pulses 141 in spike train 140.
Figure 182 in Fig. 2 C schematically illustrates second in three kinds of time for exposure according to an embodiment of the invention
The time for exposure of type.For the time for exposure of second type, controller 124 apply transmission voltage to alternatively only with storage
The associated transmission grid 50 in region 42.In fig. 2 c, the figure line 192 in Figure 182 is marked with 42-VG+, and illustration 195 shows
Go out storage region 42 transmission grid 50 be shade with indicate only storage region 42 transmission grid 50 by with transmission voltage VG+
Charge.Applied voltage V of controller 124ONAnd VOFFSubstrate 31 (figure line 193) to multi-mode light electric transducer 20 is with light pulse
The 141 time T for being launched into light scene 1300Time T afterwards2Place starts the time for exposure of Second Type.Alternatively, T2Than
T1Late time delay Δ T12, and compare T4It is early.For example, Δ T122ns can be equal to or greater than about and less than or equal to about 10ns.
During the time for exposure of Second Type, the incident light (figure line 191) in the light pulse of the light pulse 141 for reflecting spontaneous emission is given birth to
Into photoelectron be accumulated in storage region 42.In an embodiment of the present invention, the control of controller 124 multi-mode photoelectric sensing
Device 20 as each in the multiple light pulses 141 in spike train 140 during the time for exposure of Second Type to gather photoelectricity
Son.
Figure 183 in Fig. 2 D schematically illustrates the third in three kinds of time for exposure according to an embodiment of the invention
The time for exposure of type.The time for exposure of the 3rd type starts from time T alternatively similar to the exposure of Second Type3,
T3Can be earlier than T4And than T2Late time period Δ T23.For example, Δ T23Can be equal to or greater than about 2ns and less than or equal to about
10ns.For the time for exposure of the third type, controller 124 applies transmission voltage and alternatively only arrives related to storage region 43
The transmission grid 50 of connection.In figure 2d, the figure line 192 in Figure 183 is marked with 43-VG+, and illustration 195 illustrates storage region
43 transmission grid 50 be shade with indicate only storage region 43 transmission grid 50 by with transmission voltage VG+Charge.The 3rd
During the time for exposure of type, the photoelectron that the incident light in the light pulse of the light pulse 141 for reflecting spontaneous emission is generated is accumulated
Gather in storage region 43.In an embodiment of the present invention, controller 124 controls multi-mode light electric transducer 20 with the 3rd class
It is each the accumulation photoelectron in the multiple light pulses 141 in spike train 140 during the time for exposure of type.
In an embodiment of the present invention, controller 124 controls multi-mode light electric transducer 20 with right during the time for exposure
Scene 130 is imaged, and in the time for exposure, scene does not illuminate to determine the bias light for arriving at TOF-3D cameras 120 by light pulse
Amount.Alternatively, multi-mode light electric transducer 20 is operated as schematically explaining in the controller 124 such as Figure 184 in Fig. 2 E,
And will transmission voltage VG+The transmission grid 50 of optical charge storage region 44 is applied only to by voltage VONIt is determined that exposure when
Between during gather photoelectron in storage region 44.
Gather in storage region 41,42,43 and 44 after photoelectron, the capture multi-mode light electric transducer of controller 124
20 frame provides the photoelectronic amount gathered in storage region 41,42,43 and 44 to each multi-mode pixel 30 to capture
Measurement voltage.Due to due to bias light, light of the controller 124 in response to accumulation in the storage region 44 of the pixel for measuring
The amount of electronics is come the photoelectronic amount of accumulation in the storage region 41,42,43 and 44 for correcting each measured pixel 30.Picture
The corrected measurement of the storage region 41,42,43 and 44 of element 30 respectively with double-exposure time and second and the 3rd type
Convolution of the feature in the scene 130 in pixel from the light pulse of the reflection of light pulse 141 of transmitting is imaged on during time for exposure
It is proportional.Controller 124 is using the measurement to convolution determining distance of this feature away from TOF-3D cameras 120.
For example, the Jing of the storage region 41,42,43 and 44 of feature A (Fig. 2) imaging of object 132 pixel 30 thereon
The measurement of correction provides double-exposure time, Second Type time for exposure and the exposure of the 3rd type for being directed to reflection light pulse 146
The measurement of the convolution of time.Controller 124 can determine distance of feature A away from TOF-3D cameras 120 using the measurement.
For example, optical charge storage region 41,42 and 43 of the order for the given pixel 30 to the characteristic imaging in scene 130
Determined by convolution be denoted respectively as C41, C42 and C43.The value of C41, C42 and C43 is illustrated in Figure 185 in fig. 2f
As the abscissa along figure show with a centimetre function for the distance of the feature of (cm) as unit.The ordinate of figure is with arbitrary unit
Gradual change.The distance of the feature being imaged in given pixel can be according to the value of C41, C42 and the C43 determined for the given pixel come really
It is fixed.Figure 185 illustrates the value that the Jing represented by C41*, C42* and C43* determines.From which it will be seen that Jing determine value with
The value of the distance of the imaged feature equal to about 125cm most matches.
In an embodiment of the present invention, the photoelectric sensor similar with multi-mode light electric transducer 20 can be included in camera
In, embodiments in accordance with the present invention, the photoelectric sensor is used for the picture of capturing scenes.For example, Fig. 3 schematically shows basis
The smart phone 200 for including the camera 202 with multi-mode light electric transducer 20 of embodiments of the invention.Fig. 3 is schematically
Illustrate that smart phone camera 202 just be used to be imaged scene 300.
In an embodiment of the present invention, the controller (not shown) control multi-mode light electric transducer in smart phone 200
20 in response to the measurement of the intensity of the light collected from scene 300 to smart phone camera 202 and intensity threshold carrying out work
Under high spatial resolution pattern or under low spatial resolution pattern.The intensity of the light of collection can be included by smart phone 200
Any suitable photometer and/or determine using (not shown).If the intensity of light is more than intensity threshold, controller can
Control multi-mode light electric transducer 20 is operated under high spatial resolution pattern to be imaged scene 300.If the light collected
Intensity is less than intensity threshold, then the controllable multi-mode light electric transducer 20 of controller is operated under low spatial resolution pattern with right
Scene 300 is imaged.
Thus according to embodiments of the invention, there is provided a kind of with many of the multiple light sensitive pixels being formed on substrate
Pattern photoelectric sensor, each pixel includes：Photo sensitive area, in the photo sensitive area, incident photogenerated optical charge
Carrier；Multiple storage regions, for accumulating in the photo sensitive area in generate photoelectricity charge carrier；Deposit with the plurality of
The transmission grid that each storage region in storage area domain is associated, the transmission grid is charged to cause the light sensitive area
Optical charge in domain floats to the storage region；And microlens array, the microlens array includes for the plurality of
At least one lenticule of each storage region in storage region, it is micro- that the lenticule will be incident on described at least one
Light on mirror be directed to the photo sensitive area compared with to other storage regions in the plurality of storage region closer to
The region of the storage region.Alternatively, the microlens array includes the single lenticule for each storage region.Substitute
Ground or additionally, the microlens array can present rotationally symmetrical.Alternatively, it is described it is rotationally symmetrical with the plurality of storage
The equal exponent number of the quantity in region.In an embodiment of the present invention, the quantity of the plurality of storage region is equal to 2.In the present invention
Embodiment in, the quantity of the plurality of storage region is equal to or more than 4.
In an embodiment of the present invention, multi-mode light electric transducer includes controller, the controller pair and storage region
Associated transmission gate charges to cause the photo sensitive area in generate optical charge float to the storage region.It is optional
Ground, the controller transmits voltage to the transmission gate charges of only one storage region to cause in the photo sensitive area
Basic any position generate optical charge float to this storage region.Alternatively or additionally, the controller phase
Same transmits voltage while pair transmission gate charges being associated with each storage region are to cause in the photo sensitive area
In the position near a storage region at generate optical charge float to the storage region.
In an embodiment of the present invention, controller the substrate is charged so that the photoelectric sensor to be switched to out and
Close.
In an embodiment of the present invention, the photo sensitive area includes photodiode.In one embodiment, the light
Sensitizing range includes photogate.
Embodiments in accordance with the present invention, additionally provide a kind of three-dimensional (3D) camera of flight time (TOF), and the camera is to field
Scape be imaged to determine the scene in feature distance, the TOF-3D cameras include：Light source, the source emissioning light arteries and veins
Punching arranges to illuminate the scene；Multi-mode light electric transducer according to an embodiment of the invention, the photoelectric sensor receive by
Light of the feature from the light pulse reflection launched；And controller, after each light pulse, the controller is by institute
State photoelectric sensor switch on an off with during accumulating in the time for exposure selected from multiple different exposure times by from
The photoelectricity generated in the photodiode of pixel of the light in the light pulse that the feature is reflected in the photoelectric sensor
Lotus；When wherein described controller exposes to the transmission gate charges of different storage zone so that accumulation is different in different storage zone
Between during the optical charge that generated, determine the optical charge of the same frame from photoelectric sensor gathered in different storage zone
Amount, and the distance of feature in the scene is determined using the amount.
Alternatively, the different exposure time include starting from time that the light pulse in light pulse row is launched it
The time for exposure of different time afterwards.Additionally or alternatively, the different exposure time may include there is different durations
Time for exposure.The different exposure time may include with the time for exposure of different shapes.
In an embodiment of the present invention, the quantity of the plurality of different exposure time is equal to or more than 2.Alternatively, it is described
The quantity of multiple storage regions is equal to or more than the quantity of the plurality of different exposure time.
Embodiments in accordance with the present invention, additionally provide it is a kind of to scene imaging with the camera of the picture of capturing scenes, it is described
Camera includes：Multi-mode light electric transducer according to an embodiment of the invention, for receiving the light from the scene；Luminosity
Meter, for determining the intensity of the light that the camera is arrived at from the scene；And controller, for measuring in response to the luminosity
Light intensity come control to transmit grid charging.Alternatively, the controller controls right in response to threshold value luminous intensity
The charging of the transmission grid.If the intensity for measuring is less than threshold value, the controller available transmission voltage is stored to only one
The transmission gate charges in region.If the intensity for measuring be more than threshold value, the controller can with identical transmission voltage pair with it is every
One associated transmission grid of storage region charges simultaneously.
In the description and claims of this application, in verb " including ", "comprising" and " having " and combinations thereof
Each is used to refer to show that one or more objects of the verb are not necessarily the component of one or more subjects of the verb, unit
Element or partial complete list.
Provide the description to various embodiments of the present invention as an example in this application, and be not intended to limit the present invention's
Scope.Described embodiment includes different features, not all feature for all embodiments of the present invention
All it is required.Some embodiments are only using the possibility combination of Partial Feature or feature.Those skilled in the art will recognize that institute
The modification and various embodiments of the present invention of the various embodiments of the present invention of description is included in described each embodiment and indicates
Feature various combination.
Claims (15)
1. a kind of photoelectric sensor with the multiple light sensitive pixels being formed on substrate, each pixel includes：
Photo sensitive area, in the photo sensitive area, incident photogenerated optical charge carrier；
Multiple storage regions, for accumulating in the photo sensitive area in generate photoelectricity charge carrier；
The transmission grid being associated with each storage region in the plurality of storage region, the transmission grid is charged to
The optical charge in the photo sensitive area is caused to float to the storage region；And
Microlens array, the microlens array is included for each storage region in the plurality of storage region at least
The light being incident at least one lenticule is directed to the photaesthesia by one lenticule, at least one lenticule
Region compared with to other storage regions in the plurality of storage region closer to the region of the storage region.
2. photoelectric sensor as claimed in claim 1, it is characterised in that the microlens array is included for each storage
The single lenticule in region.
3. the photoelectric sensor as described in claim 1 or claim 2, it is characterised in that the microlens array is presented rotation
Turn symmetrical.
4. photoelectric sensor as claimed in claim 3, it is characterised in that it is described it is rotationally symmetrical with the plurality of memory block
The equal exponent number of the quantity in domain.
5. the photoelectric sensor as described in any one in aforementioned claim, it is characterised in that the plurality of storage region
Quantity be equal to or more than 2.
6. the photoelectric sensor as described in any one in aforementioned claim, it is characterised in that including controller, the control
The transmission gate charges that device pair processed is associated with storage region to cause the photo sensitive area in generate optical charge float to
The storage region.
7. photoelectric sensor as claimed in claim 6, it is characterised in that the controller is stored with transmission voltage to only one
The transmission gate charges in region are floated to the optical charge for causing the basic any position in the photo sensitive area to generate
This storage region.
8. the photoelectric sensor as described in claim 6 or claim 7, it is characterised in that the controller is passed with identical
Transmission of electricity is pressed while pair transmission gate charges being associated with each storage region are to cause in the photo sensitive area most
The optical charge generated at the position of a storage region floats to the storage region.
9. the photoelectric sensor as described in any one in aforementioned claim, it is characterised in that the controller is to described
Substrate charges with for the photoelectric sensor switching on an off.
10. a kind of flight time (TOF) three-dimensional (3D) camera, the camera to scene imaging to determine the scene in spy
The distance levied, the TOF-3D cameras include：
Light source, the source emissioning light spike train is illuminating the scene；
Photoelectric sensor as described in any one in claim 1-6, the photoelectric sensor is received by the feature from institute
The light of the light pulse reflection of transmitting；And
Controller, after each light pulse, the photoelectric sensor is switched on an off to accumulate in by the controller
By the light in the light pulse reflected from the feature in institute during the time for exposure selected from multiple different exposure times
State the optical charge generated in the photodiode of the pixel in photoelectric sensor；
Wherein described controller is exposed to the transmission gate charges of different storage zone with gathering difference in different storage zone
The optical charge generated during time, determines the light of the same frame from the photoelectric sensor gathered in different storage zone
The amount of electric charge, and the distance of feature in the scene is determined using the amount.
11. TOF-3D cameras as claimed in claim 10, it is characterised in that the different exposure time includes starting from described
The time for exposure of the different time after the time that the light pulse in light pulse row is launched.
The 12. TOF-3D cameras as described in claim 10 or claim 11, it is characterised in that the different exposure time bag
Include the time for exposure with different durations.
The 13. TOF-3D cameras as described in any one in claim 10-12, it is characterised in that the plurality of different exposures
The quantity of light time is equal to or more than 2, and the quantity of the plurality of storage region is equal to or more than the plurality of different exposures
The quantity of time.
14. it is a kind of to scene imaging to capture the camera of the picture of the scene, the camera includes：
Photoelectric sensor as claimed in claim 8, the photoelectric sensor receives the light from the scene；
Photometer, the photometer determines the intensity of the light that the camera is arrived at from the scene；And
Controller, the intensity of the light that the controller is measured in response to the photometer is controlling the charging to transmitting grid.
15. cameras as claimed in claim 14, it is characterised in that the controller is controlled to institute in response to threshold value luminous intensity
State the charging of transmission grid.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/479,381 | 2014-09-08 | ||
| US14/479,381 US9826214B2 (en) | 2014-09-08 | 2014-09-08 | Variable resolution pixel |
| PCT/US2015/048775 WO2016040219A1 (en) | 2014-09-08 | 2015-09-08 | Variable resolution pixel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106688099A true CN106688099A (en) | 2017-05-17 |
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| EP3192100B1 (en) | 2018-06-27 |
| CA2959702C (en) | 2023-06-27 |
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| AU2015315416A1 (en) | 2017-03-09 |
| JP6661617B2 (en) | 2020-03-11 |
| US20160073088A1 (en) | 2016-03-10 |
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