CN106684699A - Two-dimensional material flexible substrate structure, semiconductor light emitting device and manufacturing method thereof - Google Patents
Two-dimensional material flexible substrate structure, semiconductor light emitting device and manufacturing method thereof Download PDFInfo
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- CN106684699A CN106684699A CN201611111159.6A CN201611111159A CN106684699A CN 106684699 A CN106684699 A CN 106684699A CN 201611111159 A CN201611111159 A CN 201611111159A CN 106684699 A CN106684699 A CN 106684699A
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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Abstract
The invention provides a two-dimensional material flexible substrate structure, and a semiconductor light emitting device and a manufacturing method thereof. The two-dimensional material flexible substrate structure comprises a support substrate, a two-dimensional material layer positioned on the surface of the support substrate, and a flexible substrate positioned on the surface of the two-dimensional material layer. According to the two-dimensional material flexible substrate structure provided by the invention, the flexible substrate is combined with the two-dimensional material layer, attraction between upper and lower atoms is greatly weakened by Van der Waals bonding at an interface between the flexible substrate and the two-dimensional material, strength of a Van der Waals force formed at the interface is far less than bond energy of a covalent bond, the flexible substrate can completely self-control strain absorption and release stress, and has extremely high absolute flexibility; the semiconductor light emitting device based on the two-dimensional material flexible substrate structure provided by the invention has the advantages of expanding wavelength, reducing cost, promoting heat dissipation, improving service life of the device and increasing integrated functions of the device.
Description
Technical field
The invention belongs to technical field of semiconductors, is related to a kind of two-dimensional material flexible substrate structure, light emitting semiconductor device
And preparation method thereof.
Background technology
Light emitting semiconductor device includes that light emitting diode (Light Emitting Diode, LED) and classes of semiconductors swash
Light device (Laser Diode, LD), the advantages of because of its small volume, high low in energy consumption, conversion quantum efficiency, life-span length, is widely used in photograph
Many fields in bright, communication, industrial processes, medical science and daily life, its wave-length coverage cover ultraviolet, visible ray, shortwave, in
Ripple and LONG WAVE INFRARED, finally to terahertz wave band.Commercial semiconductors luminescent device is limited because being limited by substrate, can only be in silicon, indigo plant
Device architecture is designed on the limited kinds substrate such as gem, GaAs, indium phosphide and gallium antimonide and makees epitaxial growth, greatly limited
Facility and the optimization of device design that semiconductor heterostructure can be provided with cutting engineering.For example, optical-fibre communications institute
Commercialization 1.3 and 1.55 microns of InGaAsP quantum-well lasers can only epitaxial growth on InP substrate, characteristic temperature
It is low, it is necessary to stablizing for Output of laser wavelength is realized using external refrigeration, if realizing communication laser instrument in gallium arsenide substrate,
Characteristic temperature can be improved, non-brake method laser instrument is realized, is substantially reduced on device power consumption and cost, but current gallium arsenide substrate only
Having could realize communication band laser using InAs quantum dots or GaInNAs SQWs, and both gain material stability
Not as InGaAs SQWs, the latter is the gain material of commercial near infrared laser, but excitation wavelength is below 1.2 microns.
Have been reported that, using In0.22Ga0.781.23 microns of InGaAs quantum-well lasers of As substrate growths have best carrier limit
System, highest characteristic temperature reaches 140K, and can also realize lasing at 210 DEG C, and this commercialization substrate is not present so far, to open up
Exhibition wavelength to 1.3 microns, needs the InGaAs substrates for using In concentration higher.And for example medium-wave infrared laser instrument is in detection of gas
There is extensively important application, and at present InP-base I type quantum-well laser can only realize less than 2.4 microns lasings, GaSb base I types
Quantum-well laser can reach 3.7 microns of lasings.In theory more than 3 microns lasings, but device can be realized using InAs SQWs
Part structure needs long in InGaAs virtual substrate of the indium content higher than 80%.If equally can realize that InGaSb is virtually served as a contrast
Bottom, then InGaSb I type SQWs excitation wavelengths can be more than 4 microns.So the realization of high-quality virtual substrate can be significantly
The motility of improving laser device design and device performance, while reducing device cost.
Conventional realizes that virtual substrate method mainly has (1) mutation substrate；(2) flexible substrate.The former adopts continuous alloy
Or step alloy is transitioned into the virtual substrate for presetting lattice paprmeter from a kind of business substrate, this mutation substrate can be
Realize in large-sized substrate, but dislocation density is still 106cm-2More than, and rough surface, device performance is uneven, yield rate
It is low.Flexible substrate concept proposed and was verified in many devices that its cardinal principle was by Y.H.Lo in 1991 earliest
First one layer of very thin epitaxial crystalline film is transferred to into one flexible substrate of formation in another support substrate by bonding,
The epitaxial layer of lattice mismatch is grown in flexible substrate, because flexible substrate has certain degree of flexibility, the stress that lattice mismatch is produced
Discharged jointly by flexible substrate and upper membrane.If flexible substrate thickness is less than the critical thickness for growing lattice mismatch thin film
Degree, then dislocation is never produced；If flexible substrate thickness is slightly larger than the critical thickness for growing lattice mismatch thin film, that
The dislocation for producing can downward sliding terminate in the interface of flexible substrate and support substrate.Flexible substrate is bonded in support substrate
On, its interface remnants covalent bonds can hinder the stress in flexible substrate to receive and release, be unfavorable for realizing full flexible, in addition chi
Very little excessive flexible substrate needs very big absolute degree of flexibility (absolute compliance) to realize that stress is released completely
Put, can otherwise produce surface ruffle or other lattice defects, and combine can stronger covalent bond be difficult to meet absolute degree of flexibility.By
In these reasons, the demonstration although flexible substrate succeeds in multiple material system and device, business is not implemented so far
With change.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of two-dimensional material flexible liner bear building-up
Structure, light emitting semiconductor device and preparation method thereof, cannot fully absorb and discharge for solving flexible substrate of the prior art
The problem of stress.
For achieving the above object and other related purposes, the present invention provides a kind of two-dimensional material flexible substrate structure, described
Two-dimensional material flexible substrate structure includes：Support substrate；Two-dimensional material layer, positioned at the support substrate surface；Flexible substrate, position
In the two-dimensional material layer surface.
Used as a kind of preferred version of the two-dimensional material flexible substrate structure of the present invention, the support substrate is quasiconductor lining
Bottom, semi-insulator substrate, insulator substrates or Heat Conduction Material substrate.
Used as a kind of preferred version of the two-dimensional material flexible substrate structure of the present invention, the two-dimensional material layer is Graphene
Layer, silene layer, germanium alkene layer, BN layers, MoS2Layer or WS2Layer.
Used as a kind of preferred version of the two-dimensional material flexible substrate structure of the present invention, the thickness of the flexible substrate is less than
50nm。
The present invention also provides a kind of manufacture method of two-dimensional material flexible substrate structure, the two-dimensional material flexible liner bear building-up
The manufacture method of structure is comprised the following steps：
1) a kind of support substrate is provided；
2) two-dimensional material layer is formed on the surface of the support substrate；
3) flexible substrate is formed in the two-dimensional material layer surface.
As a kind of preferred version of the manufacture method of the two-dimensional material flexible substrate structure of the present invention, in step 1) in,
The support substrate is Semiconductor substrate, semi-insulator substrate, insulator substrates or Heat Conduction Material substrate.
As a kind of preferred version of the manufacture method of the two-dimensional material flexible substrate structure of the present invention, in step 2) in,
The two-dimensional material layer is graphene layer, silene layer, germanium alkene layer, BN layers, MoS2Layer or WS2Layer.
As a kind of preferred version of the manufacture method of the two-dimensional material flexible substrate structure of the present invention, in step 3) in,
Flexible substrate is formed in the two-dimensional material layer surface to comprise the following steps：
A kind of growth substrates 3-1) are provided；
3-2) form cushion in the growth substrates；
3-3) form sacrifice layer on the cushion；
Flexible substrate material layer 3-4) is formed on the sacrifice layer；
3-5) by step 3-4) structure that obtains is bonded to the surface of the two-dimensional material layer, the flexible substrate material layer
Surface be bonding face；
3-6) the flexible substrate material layer and the sacrifice layer are separated, the flexible substrate material layer is transferred to
The surface of the two-dimensional material layer, to form the flexible substrate.
As a kind of preferred version of the manufacture method of the two-dimensional material flexible substrate structure of the present invention, in step 3-4) with
Step 3-5) between, also include the step of process is passivated to the surface of the flexible substrate material layer.
As the present invention two-dimensional material flexible substrate structure manufacture method a kind of preferred version, formation it is described soft
Property substrate thickness be less than 50nm.
The present invention also provides a kind of light emitting semiconductor device, and the light emitting semiconductor device includes：In any of the above-described scheme
Described two-dimensional material flexible substrate structure；Luminescent device material layer, positioned at the surface of the flexible substrate.
Used as a kind of preferred version of the light emitting semiconductor device of the present invention, the luminescent device material layer includes：Lower electricity
Pole, positioned at the surface of the flexible substrate；Lower waveguide layer, positioned at the surface of the bottom electrode；Quantum well layer, positioned at the lower ripple
The surface of conducting shell；Upper ducting layer, positioned at the surface of the quantum well layer；Top electrode, positioned at the surface of the upper ducting layer.
Used as a kind of preferred version of the light emitting semiconductor device of the present invention, the luminescent device material layer includes：Lower ripple
Conducting shell, positioned at the surface of the flexible substrate；Quantum well layer, positioned at the surface of the lower waveguide layer；Bottom electrode, positioned at the amount
The surface of the lower waveguide layer of sub- well layer side；Upper ducting layer, positioned at the surface of the quantum well layer；Top electrode, positioned at institute
State the surface of ducting layer.
The present invention also provides a kind of manufacture method of light emitting semiconductor device, the manufacture method of the light emitting semiconductor device
Comprise the following steps：
1) make described using the manufacture method of two-dimensional material flexible substrate structure as described above described in any one scheme
Two-dimensional material flexible substrate structure；
2) luminescent device material layer is formed on the flexible substrate surface.
As a kind of preferred version of the manufacture method of the light emitting semiconductor device of the present invention, in step 2) in, described
Flexible substrate surface forms luminescent device material layer and comprises the following steps：
2-1) form bottom electrode on the flexible substrate surface；
2-2) form lower waveguide layer in the lower electrode surface；
2-3) form quantum well layer on the lower waveguide layer surface；
2-4) form ducting layer on the quantum well layer surface；
2-5) ducting layer surface forms Top electrode on described.
As a kind of preferred version of the manufacture method of the light emitting semiconductor device of the present invention, in step 2) in, described
Flexible substrate surface forms luminescent device material layer and comprises the following steps：
2-1) form lower waveguide layer on the flexible substrate surface；
2-2) form quantum well layer on the lower waveguide layer surface；
2-3) form ducting layer on the quantum well layer surface；
2-4) ducting layer surface forms Top electrode on described；
2-5) etching removes the part Top electrode, the part upper ducting layer and the part quantum well layer to be formed out
Mouthful, the opening exposes the lower waveguide layer；
2-6) the lower waveguide layer surface in the opening forms bottom electrode.
As described above, two-dimensional material flexible substrate structure, light emitting semiconductor device of the present invention and preparation method thereof, have
Following beneficial effect：The present invention two-dimensional material flexible substrate structure by flexible substrate in combination with two-dimensional material layer, flexible liner
The van der waals bond of bottom and two-dimensional material bed boundary largely reducing the captivation between upper and lower atom, the model that interface is formed
The intensity of moral wals force is far smaller than bond energy of covalent bond, and flexible substrate self regulation strain can be received and discharge and answer completely
Power, with very big absolute degree of flexibility；The light emitting semiconductor device of the present invention is based on the two-dimensional material flexible substrate structure, tool
Have the advantages that to expand wavelength, reduces cost, increase radiating, improve device lifetime and increase device integrated functionality.
Description of the drawings
Fig. 1 is shown as the structural representation of the two-dimensional material flexible substrate structure provided in the embodiment of the present invention one.
Fig. 2 is shown as the flow process of the manufacture method of the two-dimensional material flexible substrate structure provided in the embodiment of the present invention two
Figure.
Fig. 3 to Figure 10 is shown as the manufacture method of the two-dimensional material flexible substrate structure provided in the embodiment of the present invention two and exists
Structural representation in each step.
Figure 11 to Figure 12 is shown as the structural representation of the light emitting semiconductor device provided in the embodiment of the present invention three.
Figure 13 is shown as the flow process of the manufacture method of the two-dimensional material flexible substrate structure provided in the embodiment of the present invention four
Figure.
The manufacture method that Figure 14 to Figure 24 is shown as the two-dimensional material flexible substrate structure provided in the embodiment of the present invention four
Structural representation in each step.
Component label instructions
10 support substrates
11 two-dimensional material layers
12 flexible substrates
13 flexible substrate material layers
14 growth substrates
15 cushions
16 sacrifice layers
17 luminescent device material layers
171 bottom electrodes
172 lower waveguide layers
173 quantum well layers
1731 first quantum well layers
1732 second quantum well layers
1733 the 3rd quantum well layers
Ducting layer on 174
175 Top electrodes
18 openings
Specific embodiment
Embodiments of the present invention are illustrated below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands easily other advantages and effect of the present invention.The present invention can also pass through concrete realities different in addition
The mode of applying is carried out or applies, the every details in this specification can also based on different viewpoints with application, without departing from
Various modifications and changes are carried out under the spirit of the present invention.
Refer to Fig. 1 to Figure 24.It should be noted that the diagram provided in the present embodiment only illustrates in a schematic way this
The basic conception of invention, though only show in diagram with relevant component in the present invention rather than according to package count during actual enforcement
Mesh, shape and size are drawn, and the kenel of each component, quantity and ratio can be a kind of random change during its actual enforcement, and its
Assembly layout kenel is likely to increasingly complex.
Embodiment one
Fig. 1 is referred to, the present invention provides a kind of two-dimensional material flexible substrate structure, the two-dimensional material flexible substrate structure
Including：Support substrate 10；Two-dimensional material layer 11, the two-dimensional material layer 11 is located at the surface of the support substrate 10；Flexible liner
Bottom 12, the flexible substrate 12 is located at the surface of the two-dimensional material layer 11.
As an example, the support substrate 10 can be Semiconductor substrate, semi-insulator substrate, insulator substrates or heat conduction
Material substrate.Preferably, in the present embodiment, the support substrate 10 is Si substrates.
As an example, the two-dimensional material layer 11 can be graphene layer, silene layer, germanium alkene layer, BN layers, MoS2Layer or WS2
Layer.Preferably, in the present embodiment, the two-dimensional material layer 11 is graphene layer.
As an example, the lattice paprmeter of the flexible substrate 12 and the light emitting semiconductor device material that be formed at its surface
The lattice paprmeter of layer matches or is adapted to；In this example, the flexible substrate 12 can be but to be not limited only to N-shaped InGaAs flexible
Substrate, more specifically, the flexible substrate 12 can be N-shaped In0.27Ga0.73As flexible substrates or N-shaped In0.73Ga0.27As is soft
Property substrate.
As an example, the thickness of the flexible substrate 12 can be selected according to actual needs, it is preferable that the present embodiment
In, the thickness of the flexible substrate 12 is less than 50nm.
The two-dimensional material flexible substrate structure by the flexible substrate 12 in combination with the two-dimensional material layer 11, it is described
The van der waals bond at flexible substrate 12 and the interface of two-dimensional material layer 11 largely reducing the captivation between upper and lower atom,
The intensity of the Van der Waals for that interface is formed is far smaller than bond energy of covalent bond, and the flexible substrate 12 self can be adjusted completely
Stress is received and discharges in section strain, with very big absolute degree of flexibility.
Embodiment two
Fig. 2 is referred to, the present invention also provides a kind of manufacture method of two-dimensional material flexible substrate structure, the two-dimensional material
The manufacture method of flexible substrate structure is comprised the following steps：
1) a kind of support substrate is provided；
2) two-dimensional material layer is formed on the surface of the support substrate；
3) flexible substrate is formed in the two-dimensional material layer surface.
Execution step 1), refer to S1 steps and the Fig. 3 in Fig. 2, there is provided a kind of support substrate 10.
As an example, the support substrate 10 can be Semiconductor substrate, semi-insulator substrate, insulator substrates or heat conduction
Material substrate.Preferably, in the present embodiment, the support substrate 10 is Si substrates.
Execution step 2), S2 steps and the Fig. 4 in Fig. 2 is referred to, form two-dimentional material on the surface of the support substrate 10
The bed of material 11.
As an example, the two-dimensional material layer 11 can be graphene layer, silene layer, germanium alkene layer, BN layers, MoS2Layer or WS2
Layer.Preferably, in the present embodiment, the two-dimensional material layer 11 is graphene layer.
Execution step 3), S3 steps and the Fig. 5 to Figure 10 in Fig. 2 is referred to, formed on the surface of two-dimensional material layer 11
Flexible substrate 12.
As an example, form flexible substrate 12 on the surface of two-dimensional material layer 11 to comprise the following steps：
A kind of growth substrates 14 3-1) are provided, as shown in Figure 5；
3-2) in the Epitaxial growth cushion 15 of the growth substrates 14, as shown in Figure 6；
3-3) in the Epitaxial growth sacrifice layer 16 of the cushion 15, as shown in Figure 7；The material of the sacrifice layer 16 is can
With the material being easily removed by selective corrosion or oxidation；
The flexible substrate material layer 13 3-4) is formed on the sacrifice layer 16, as shown in Figure 8；
3-5) by step 3-4) structure that obtains is bonded to the surface of the two-dimensional material layer 11, the flexible substrate material
The surface of layer 13 is bonding face, as shown in Figure 9；
3-6) the flexible substrate material layer 13 and the sacrifice layer 16 are separated by wet corrosion technique, will be described
Flexible substrate material layer 13 is transferred to the surface of the two-dimensional material layer 11, to form the flexible substrate 12, as shown in Figure 10.
As an example, in step 3-4) and step 3-5) between, also include the surface to the flexible substrate material layer 13
The step of being passivated process.
As an example, the lattice paprmeter of the flexible substrate 12 and the light emitting semiconductor device material that be formed at its surface
The lattice paprmeter of layer matches or is adapted to.
As an example, the thickness of the flexible substrate 12 can be selected according to actual needs, it is preferable that the present embodiment
In, the thickness of the flexible substrate 12 is less than 50nm.
In this example, the growth substrates 14 can be N-shaped GaAs substrates；The cushion 15 can be buffered for GaAs
Layer, the thickness of the cushion 15 can be 200nm；The sacrifice layer 16 can be AlAs sacrifice layers, the sacrifice layer 16
Thickness can be 100nm；The flexible substrate material layer 13 can be N-shaped In0.27Ga0.73As。
In another example, the growth substrates 14 can be N-shaped InP substrate；The cushion 15 can be
In0.53Ga0.47As cushions, the thickness of the cushion 15 can be 200nm；The sacrifice layer 16 can be InP sacrificial layer,
The thickness of the sacrifice layer 16 can be 100nm；The flexible substrate material layer 13 can be N-shaped In0.73Ga0.27As。
Embodiment three
Figure 11 and Figure 12 is referred to, the present invention also provides a kind of light emitting semiconductor device, the light emitting semiconductor device bag
Include：Two-dimensional material flexible substrate structure and luminescent device material layer 17 described in embodiment one, the luminescent device material layer
17 surfaces for being located at the flexible substrate.The concrete structure of the two-dimensional material flexible substrate structure refers to embodiment one, this
It is secondary to be not repeated.
Figure 11 is referred to, in one example, the luminescent device material layer includes：Bottom electrode 171, the bottom electrode 171
Positioned at the surface of the flexible substrate 12；Lower waveguide layer 172, the lower waveguide layer 172 is located at the surface of the bottom electrode 171；
Quantum well layer 173, the quantum well layer 173 is located at the surface of the lower waveguide layer 172, and the quantum well layer 173 includes first
Quantum well layer 1731, the second quantum well layer 1732 and the 3rd quantum well layer 1733, first quantum well layer 1731 is located at described
The surface of lower waveguide layer 172, second quantum well layer 1732 be located at first quantum well layer 1731 surface, the described 3rd
Quantum well layer 1733 is located at the surface of second quantum well layer 1732；Upper ducting layer 174, the upper ducting layer 174 is located at institute
State the surface of the 3rd quantum well layer 1733；Top electrode 175, the Top electrode 175 is located at the surface of the upper ducting layer 174.
Figure 12 is referred to, in another example, the luminescent device material layer includes：Lower waveguide layer 172, the lower waveguide
Layer 172 is located at the surface of the flexible substrate 12；Quantum well layer 173, the quantum well layer 173 is located at the lower waveguide layer 172
Surface, the quantum well layer 173 include the first quantum well layer 1731, the second quantum well layer 1732 and the 3rd quantum well layer
1733, first quantum well layer 1731 is located at the surface of the lower waveguide layer 172, and second quantum well layer 1732 is located at institute
The surface of the first quantum well layer 1731 is stated, the 3rd quantum well layer 1733 is located at the surface of second quantum well layer 1732；
Bottom electrode 171, the bottom electrode 171 is located at the surface of the lower waveguide layer 172 of the side of the quantum well layer 173；Upper waveguide
Layer 174, the upper ducting layer 174 is located at the surface of the 3rd quantum well layer 1733；Top electrode 175, the Top electrode 175
In the surface of the upper ducting layer 174.
As an example, the flexible substrate 12 can be N-shaped In0.27Ga0.73As flexible substrates, the flexible substrate 12
Thickness can be 5nm；The bottom electrode 171 can be N-shaped In0.27Ga0.73As bottom electrodes, the thickness of the bottom electrode 171 can be with
For 500nm；The lower waveguide layer 172 can be InGaP lower waveguide layers, and the thickness of the lower waveguide layer 172 can be 1500nm；
First quantum well layer 1731 can be InAlGaAs layers, and the thickness of first quantum well layer 1731 can be 50nm；Institute
It is alternate laminated structure to state the second quantum well layer 1732, including the In being alternately superimposed on0.47Ga0.53As layers and InAlGaAs layers, it is described
In0.47Ga0.53The thickness of As layers can be 7nm, and the thickness of the InAlGaAs layers can be 10nm；3rd quantum well layer
1733 can be InAlGaAs layers, and the thickness of the 3rd quantum well layer 1733 can be 50nm；The upper ducting layer 174 can be with
For ducting layer on InGaP, the thickness of the upper ducting layer 174 can be 1500nm；The Top electrode 175 can be p-type
In0.27Ga0.73As Top electrodes, the thickness of the Top electrode 175 can be 200nm.
As an example, the flexible substrate 12 can be N-shaped In0.73Ga0.27As flexible substrates, the flexible substrate 12
Thickness can be 5nm；The bottom electrode 171 can be N-shaped In0.8Ga0.2As bottom electrodes, the thickness of the bottom electrode 171 can be with
For 500nm；The lower waveguide layer 172 can be In0.8Al0.2As lower waveguide layers, the thickness of the lower waveguide layer 172 can be
2000nm；First quantum well layer 1731 can be In0.8Ga0.2As layers, the thickness of first quantum well layer 1731 can be with
For 50nm；Second quantum well layer 1732 is alternate laminated structure, including the InAs layers and In that are alternately superimposed on0.8Ga0.2As layers,
The thickness of the InAs layers can be 10nm, the In0.8Ga0.2The thickness of As layers can be 15nm；3rd quantum well layer
1733 can be In0.8Ga0.2As layers, the thickness of the 3rd quantum well layer 1733 can be 50nm；The upper ducting layer 174 can
Think In0.8Al0.2The upper ducting layers of As, the thickness of the upper ducting layer 174 can be 2000nm；The Top electrode 175 can be p
Type In0.8Ga0.2As Top electrodes, the thickness of the Top electrode 175 can be 200nm.
Example IV
Figure 13 is referred to, the present invention also provides a kind of manufacture method of light emitting semiconductor device, the photogenerator
The manufacture method of part is comprised the following steps：
1) two-dimensional material is made using the manufacture method of the two-dimensional material flexible substrate structure described in embodiment two
Flexible substrate structure；
2) luminescent device material layer is formed on the flexible substrate surface.
Execution step 1), the S1 steps in Figure 13 are referred to, using the two-dimensional material flexible substrate described in embodiment two
The manufacture method of structure makes the two-dimensional material flexible substrate structure.
As an example, the concrete grammar for making the two-dimensional material flexible substrate structure refers to embodiment two, this time not
Tire out again and state.
Execution step 2), S2 steps and the Figure 14 to Figure 24 in Figure 13 is referred to, in the surface shape of the flexible substrate 14
Into luminescent device material layer 17.
In one example, form luminescent device material layer 17 on the surface of the flexible substrate 12 to comprise the following steps：
2-1) bottom electrode 171 is formed on the surface of the flexible substrate 12, as shown in figure 14；
2-2) lower waveguide layer 172 is formed on the surface of the bottom electrode 171, as shown in figure 15；
2-3) quantum well layer 173 is formed on the surface of the lower waveguide layer 172, the quantum well layer 173 includes the first amount
Sub- well layer 1731, the second quantum well layer 1732 and the 3rd quantum well layer 1733, first quantum well layer 1731 be located at it is described under
The surface of ducting layer 172, second quantum well layer 1732 is located at the surface of first quantum well layer 1731, the 3rd amount
Sub- well layer 1733 is located at the surface of second quantum well layer 1732, i.e., on the surface of the lower waveguide layer 172 form described successively
First quantum well layer 1731, second quantum well layer 1732 and the 3rd quantum well layer 1733, as shown in figure 16；
2-4) ducting layer 174 is formed on the surface of the 3rd quantum well layer 1733, as shown in figure 17；
2-5) surface of ducting layer 174 forms Top electrode 175 on described, as shown in figure 18.
In another example, form luminescent device material layer 17 on the surface of the flexible substrate 12 to comprise the following steps：
2-1) lower waveguide layer 172 is formed on the surface of the flexible substrate 12, as shown in figure 19；
2-2) quantum well layer 173 is formed on the surface of the lower waveguide layer 172, the quantum well layer 173 includes the first amount
Sub- well layer 1731, the second quantum well layer 1732 and the 3rd quantum well layer 1733, first quantum well layer 1731 be located at it is described under
The surface of ducting layer 172, second quantum well layer 1732 is located at the surface of first quantum well layer 1731, the 3rd amount
Sub- well layer 1733 is located at the surface of second quantum well layer 1732, i.e., on the surface of the lower waveguide layer 172 form described successively
First quantum well layer 1731, second quantum well layer 1732 and the 3rd quantum well layer 1733, as shown in figure 20；
2-3) ducting layer 174 is formed on the surface of the quantum well layer 173, as shown in figure 21；
2-4) surface of ducting layer 174 forms Top electrode 175 on described, as shown in figure 22；
2-5) etching removes the part Top electrode 175, the part upper ducting layer 174 and the part quantum well layer
173 to form opening 18, and the opening 18 exposes the lower waveguide layer 172, as shown in figure 23；
2-6) surface of the lower waveguide layer 172 in the opening 18 forms bottom electrode 171, as shown in figure 24.
As an example, the flexible substrate 12 can be N-shaped In0.27Ga0.73As flexible substrates, the flexible substrate 12
Thickness can be 5nm；The bottom electrode 171 can be N-shaped In0.27Ga0.73As bottom electrodes, the thickness of the bottom electrode 171 can be with
For 500nm；The lower waveguide layer 172 can be InGaP lower waveguide layers, and the thickness of the lower waveguide layer 172 can be 1500nm；
First quantum well layer 1731 can be InAlGaAs layers, and the thickness of first quantum well layer 1731 can be 50nm；Institute
It is alternate laminated structure to state the second quantum well layer 1732, including the In being alternately superimposed on0.47Ga0.53As layers and InAlGaAs layers, it is described
In0.47Ga0.53The thickness of As layers can be 7nm, and the thickness of the InAlGaAs layers can be 10nm；3rd quantum well layer
1733 can be InAlGaAs layers, and the thickness of the 3rd quantum well layer 1733 can be 50nm；The upper ducting layer 174 can be with
For ducting layer on InGaP, the thickness of the upper ducting layer 174 can be 1500nm；The Top electrode 175 can be p-type
In0.27Ga0.73As Top electrodes, the thickness of the Top electrode 175 can be 200nm.
As an example, the flexible substrate 12 can be N-shaped In0.73Ga0.27As flexible substrates, the flexible substrate 12
Thickness can be 5nm；The bottom electrode 171 can be N-shaped In0.8Ga0.2As bottom electrodes, the thickness of the bottom electrode 171 can be with
For 500nm；The lower waveguide layer 172 can be In0.8Al0.2As lower waveguide layers, the thickness of the lower waveguide layer 172 can be
2000nm；First quantum well layer 1731 can be In0.8Ga0.2As layers, the thickness of first quantum well layer 1731 can be with
For 50nm；Second quantum well layer 1732 is alternate laminated structure, including the InAs layers and In that are alternately superimposed on0.8Ga0.2As layers,
The thickness of the InAs layers can be 10nm, the In0.8Ga0.2The thickness of As layers can be 15nm；3rd quantum well layer
1733 can be In0.8Ga0.2As layers, the thickness of the 3rd quantum well layer 1733 can be 50nm；The upper ducting layer 174 can
Think In0.8Al0.2The upper ducting layers of As, the thickness of the upper ducting layer 174 can be 2000nm；The Top electrode 175 can be p
Type In0.8Ga0.2As Top electrodes, the thickness of the Top electrode 175 can be 200nm.
In sum, the present invention provides a kind of two-dimensional material flexible substrate structure, light emitting semiconductor device and its making side
Method, the two-dimensional material flexible substrate structure includes：Support substrate；Two-dimensional material layer, positioned at the support substrate surface；It is flexible
Substrate, positioned at the two-dimensional material layer surface.The two-dimensional material flexible substrate structure of the present invention is by flexible substrate and two-dimensional material
Layer combines, and the van der waals bond of flexible substrate and two-dimensional material bed boundary largely reducing the attraction between upper and lower atom
Power, the intensity of the Van der Waals for that interface is formed is far smaller than bond energy of covalent bond, and flexible substrate can self regulation completely
Stress is received and discharges in strain, with very big absolute degree of flexibility；The light emitting semiconductor device of the present invention is based on the two-dimentional material
Material flexible substrate structure, with expansion wavelength, reduces cost, increases radiating, improves device lifetime and increases device integrated functionality
The advantages of.
The principle and its effect of above-described embodiment only illustrative present invention, it is of the invention not for limiting.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and the scope without prejudice to the present invention to above-described embodiment.Cause
This, such as those of ordinary skill in the art is complete with institute under technological thought without departing from disclosed spirit
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (16)
1. a kind of two-dimensional material flexible substrate structure, it is characterised in that include：
Support substrate；
Two-dimensional material layer, positioned at the support substrate surface；
Flexible substrate, positioned at the two-dimensional material layer surface.
2. two-dimensional material flexible substrate structure according to claim 1, it is characterised in that：The support substrate is quasiconductor
Substrate, semi-insulator substrate, insulator substrates or Heat Conduction Material substrate.
3. two-dimensional material flexible substrate structure according to claim 1, it is characterised in that：The two-dimensional material layer is graphite
Alkene layer, silene layer, germanium alkene layer, BN layers, MoS2Layer or WS2Layer.
4. two-dimensional material flexible substrate structure according to claim 1, it is characterised in that：The thickness of the flexible substrate is little
In 50nm.
5. a kind of manufacture method of two-dimensional material flexible substrate structure, it is characterised in that：Comprise the following steps：
1) a kind of support substrate is provided；
2) two-dimensional material layer is formed on the surface of the support substrate；
3) flexible substrate is formed in the two-dimensional material layer surface.
6. the manufacture method of two-dimensional material flexible substrate structure according to claim 5, it is characterised in that：In step 1)
In, the support substrate is Semiconductor substrate, semi-insulator substrate, insulator substrates or Heat Conduction Material substrate.
7. the manufacture method of two-dimensional material flexible substrate structure according to claim 5, it is characterised in that：In step 2)
In, the two-dimensional material layer is graphene layer, silene layer, germanium alkene layer, BN layers, MoS2Layer or WS2Layer.
8. the manufacture method of two-dimensional material flexible substrate structure according to claim 5, it is characterised in that：In step 3)
In, form flexible substrate in the two-dimensional material layer surface and comprise the following steps：
A kind of growth substrates 3-1) are provided；
3-2) form cushion in the growth substrates；
3-3) form sacrifice layer on the cushion；
Flexible substrate material layer 3-4) is formed on the sacrifice layer；
3-5) by step 3-4) structure that obtains is bonded to the surface of the two-dimensional material layer, the table of the flexible substrate material layer
Face is bonding face；
3-6) the flexible substrate material layer and the sacrifice layer are separated, the flexible substrate material layer are transferred to described
The surface of two-dimensional material layer, to form the flexible substrate.
9. the manufacture method of two-dimensional material flexible substrate structure according to claim 8, it is characterised in that：In step 3-4)
With step 3-5) between, also include the step of process is passivated to the surface of the flexible substrate material layer.
10. the manufacture method of the two-dimensional material flexible substrate structure according to claim 5 or 8, it is characterised in that：Formed
The thickness of the flexible substrate is less than 50nm.
11. a kind of light emitting semiconductor devices, it is characterised in that include：
Two-dimensional material flexible substrate structure as any one of Claims 1-4；
Luminescent device material layer, positioned at the surface of the flexible substrate.
12. light emitting semiconductor devices according to claim 11, it is characterised in that：The luminescent device material layer includes：
Bottom electrode, positioned at the surface of the flexible substrate；
Lower waveguide layer, positioned at the surface of the bottom electrode；
Quantum well layer, positioned at the surface of the lower waveguide layer；
Upper ducting layer, positioned at the surface of the quantum well layer；
Top electrode, positioned at the surface of the upper ducting layer.
13. light emitting semiconductor devices according to claim 11, it is characterised in that：The luminescent device material layer includes：
Lower waveguide layer, positioned at the surface of the flexible substrate；
Quantum well layer, positioned at the surface of the lower waveguide layer；
Bottom electrode, positioned at the surface of the lower waveguide layer of the quantum well layer side；
Upper ducting layer, positioned at the surface of the quantum well layer；
Top electrode, positioned at the surface of the upper ducting layer.
A kind of 14. manufacture methods of light emitting semiconductor device, it is characterised in that：Comprise the following steps：
1) as described in the manufacture method of two-dimensional material flexible substrate structure of the employing any one of claim 5 to 10 makes
Two-dimensional material flexible substrate structure；
2) luminescent device material layer is formed on the flexible substrate surface.
The manufacture method of 15. light emitting semiconductor devices according to claim 14, it is characterised in that：In step 2) in,
The flexible substrate surface forms luminescent device material layer and comprises the following steps：
2-1) form bottom electrode on the flexible substrate surface；
2-2) form lower waveguide layer in the lower electrode surface；
2-3) form quantum well layer on the lower waveguide layer surface；
2-4) form ducting layer on the quantum well layer surface；
2-5) ducting layer surface forms Top electrode on described.
The manufacture method of 16. light emitting semiconductor devices according to claim 14, it is characterised in that：In step 2) in,
The flexible substrate surface forms luminescent device material layer and comprises the following steps：
2-1) form lower waveguide layer on the flexible substrate surface；
2-2) form quantum well layer on the lower waveguide layer surface；
2-3) form ducting layer on the quantum well layer surface；
2-4) ducting layer surface forms Top electrode on described；
2-5) etching removes the part Top electrode, the part upper ducting layer and the part quantum well layer to form opening,
The opening exposes the lower waveguide layer；
2-6) the lower waveguide layer surface in the opening forms bottom electrode.
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| CN109378709A (en) * | 2018-12-13 | 2019-02-22 | 中国科学院半导体研究所 | Flexible VCSEL array device and preparation method thereof |
| CN109860264A (en) * | 2019-03-01 | 2019-06-07 | 武汉华星光电半导体显示技术有限公司 | Organic LED display panel and its manufacturing method |
| CN110323668A (en) * | 2019-07-05 | 2019-10-11 | 清华大学 | A kind of infrared narrowband emitter |
| CN110544670A (en) * | 2018-05-28 | 2019-12-06 | Asm知识产权私人控股有限公司 | Substrate processing method and device manufactured using the same |
| CN110768104A (en) * | 2019-12-02 | 2020-02-07 | 中山德华芯片技术有限公司 | Long wavelength GaInNAs/InGaAs composite quantum dot vertical cavity surface emitting laser |
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