CN106684655A - Fabrication method of graphene convergence bar - Google Patents
Fabrication method of graphene convergence bar Download PDFInfo
- Publication number
- CN106684655A CN106684655A CN201710029101.5A CN201710029101A CN106684655A CN 106684655 A CN106684655 A CN 106684655A CN 201710029101 A CN201710029101 A CN 201710029101A CN 106684655 A CN106684655 A CN 106684655A
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- CN
- China
- Prior art keywords
- graphene
- metallic substrates
- preparation
- busbar
- graphene oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R25/00—Coupling parts adapted for simultaneous co-operation with two or more identical counterparts, e.g. for distributing energy to two or more circuits
- H01R25/16—Rails or bus-bars provided with a plurality of discrete connecting locations for counterparts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
- H01R13/02—Contact members
- H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/58—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation characterised by the form or material of the contacting members
Abstract
The invention provides a fabrication method of a graphene convergence bar. The fabrication method comprises the steps of firstly, attaching graphene oxide onto a bottom surface of a metal substrate; and secondly, reducing the graphene oxide to graphene, thereby obtaining the metal substrate and a graphene layer attached onto a surface layer of the metal substrate, namely the graphene convergence bar. The whole fabrication process is simple and rapid, and the graphene reduction is high-energy ray irradiation reduction; since a chemical medicine is not used during the process, the fabrication method is environmental-friendly and has no pollution; and the graphene convergence bar fabricated by the method is long in service lifetime and high in conductivity.
Description
【Technical field】
The invention belongs to material with carbon element technical field, is specifically related to a kind of preparation method of Graphene busbar.
【Background technology】
Graphene is the Two Dimensional Free state atomic crystal of the unique presence having now been found that, is to construct zero dimension fullerene, one-dimensional carbon to receive
The basic structural unit of mitron, three-dimensional graphite.It has the peculiar physics such as high conductance, highly thermally conductive, high rigidity and high intensity, changes
Property is learned, is had broad application prospects in electronics, information, the energy, material and biomedicine field.
Graphene becomes generation semiconductor industry basic material as following possible substituted for silicon, and it has different excellent
Good performance.Graphene has the carrier mobility high more than silicon, and Graphene has the electron mobility 200 of high speed under room temperature
000 cm2/Vs, quantum hall effect, the high m2/g of theoretical specific surface area 2600, also have the W/ of high heat conductance 3000
MK and outstanding mechanical property (high-moduluss 1060GPa, high intensity 130GPa), are considered as in single-molecule detection device, integrated
The aspects such as the quantum devices such as circuit, field-effect transistor, functional composite material, energy storage material, catalyst carrier have widely
Application prospect.
The Main Function of busbar is to collect in the electric current in power supply, then these electric currents are progressively directed to into external circuit
In, its requirement has good conductivity, and its conducting base typically selects the excellent metal of conductivity, such as fine copper, copper and aluminium alloy,
At present, Graphene is being walked out to after mass production success from laboratory, is just become using Graphene as busbar
May.
【The content of the invention】
For above-mentioned technical problem of the prior art, the invention provides a kind of preparation method of Graphene busbar, simple,
Fast, environmental protection.
In order to solve above-mentioned technical problem, the present invention adopts following technical proposals:
A kind of preparation method of Graphene busbar, includes following steps:
S1:Metallic substrates are provided;
S2:The surface of metallic substrates is carried out into sided corona treatment;
S3:Graphene oxide water solution is uniformly coated on the surface of metallic substrates;
S4:Metallic substrates are dried into process so that graphene oxide layer in the surface attachment of metallic substrates;
S5:The metallic substrates for being attached with graphene oxide layer are placed under high-energy ray irradiation unit and are irradiated, stone will be aoxidized
Black alkene is reduced into Graphene, obtains graphene layer;
S6:Metallic substrates are cleaned, remaining graphene oxide layer is washed;
S7:Metallic substrates are dried, Graphene busbar is obtained.
In further improvement project, described high-energy ray irradiation unit is laser irradiation device, and its wavelength is
150-850nm。
In further improvement project, described metallic substrates are Copper Foil.
In further improvement project, the coating operation is spraying, prints or spin coating.
In further improvement project, the cleaning operation is referred to and cleaned with polar solvent or organic solvent.
Compared with prior art, the invention has the beneficial effects as follows:The present invention is aoxidized first in metal substrate surface attachment
Graphene, is then reduced into Graphene by graphene oxide, has thus obtained the Graphene of metallic substrates and its top layer attachment
The high-energy ray irradiation that is reduced to of layer, as Graphene busbar, whole preparation process simple and fast, and its Graphene is reduced,
It is environmentally friendly, pollution-free in the process due to not adopting chemical drugss, its Graphene busbar long service life for preparing, conduction
Speed is high.
With reference to specific embodiment, the present invention is described in further detail:
【Specific embodiment】
A kind of preparation method of Graphene busbar, includes following steps:
S1:Copper Foil is provided;
S2:Copper Foil is carried out into sided corona treatment;
S3:In the surface even application graphene oxide water solution of Copper Foil;
S4:Copper Foil is dried into process so that graphene oxide layer in the surface attachment of Copper Foil;
S5:The Copper Foil for being attached with graphene oxide layer is placed under high-energy ray irradiation unit and is irradiated, by graphene oxide
Graphene is reduced into, graphene layer is obtained so that copper foil surface is attached with graphene oxide layer and graphene layer;
S6:Copper Foil is cleaned, remaining graphene oxide layer is washed;
S7:Copper Foil is dried, such copper foil surface is just only attached with graphene layer, and in this case, we obtain
Copper Foil and its graphene layer on top layer, as Graphene busbar.
In the present embodiment, described high-energy ray irradiation unit is laser irradiation device, and its wavelength is 850nm, certainly
High-energy ray irradiation unit can also be X-ray irradiator, particle beam irradiation device etc.;Cleaning operation in step s 6 refers to
The remaining graphene oxide layer not being reduced is cleaned using polar solvent so that copper foil surface only adheres to graphite
Alkene layer.
Although the present invention is described in detail with reference to above example, by the disclosure for those skilled in the art are aobvious
And be clear to, and in the case of the principle of the invention and scope limited without departing from described claim, can be right
The present invention makes a variety of changes or changes.Therefore, the detailed description of the embodiment of the present disclosure is only used for explaining, rather than for limiting
The present invention, but it is defined by the subject-matter of the claims the scope of protection.
Claims (5)
1. a kind of preparation method of Graphene busbar, it is characterised in that include following steps:
S1:Metallic substrates are provided;
S2:The surface of metallic substrates is carried out into sided corona treatment;
S3:Graphene oxide water solution is uniformly coated on the surface of metallic substrates;
S4:Metallic substrates are dried into process so that graphene oxide layer in the surface attachment of metallic substrates;
S5:The metallic substrates for being attached with graphene oxide layer are placed under high-energy ray irradiation unit and are irradiated, stone will be aoxidized
Black alkene is reduced into Graphene, obtains graphene layer;
S6:Metallic substrates are cleaned, remaining graphene oxide layer is washed;
S7:Metallic substrates are dried, Graphene busbar is obtained.
2. a kind of preparation method of Graphene busbar according to claim 1, it is characterised in that described high-energy ray
Irradiation unit is laser irradiation device, and its wavelength is 150-850nm.
3. a kind of preparation method of Graphene busbar according to claim 1, it is characterised in that described metallic substrates
For Copper Foil.
4. the preparation method of Graphene ultracapacitor according to claim 1, it is characterised in that the coating operation is
Spraying, printing or spin coating.
5. the preparation method of Graphene ultracapacitor according to claim 1, it is characterised in that the cleaning operation is
Finger is cleaned with polar solvent or organic solvent.
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CN201710029101.5A CN106684655A (en) | 2017-01-16 | 2017-01-16 | Fabrication method of graphene convergence bar |
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CN201710029101.5A CN106684655A (en) | 2017-01-16 | 2017-01-16 | Fabrication method of graphene convergence bar |
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CN106684655A true CN106684655A (en) | 2017-05-17 |
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CN201710029101.5A Pending CN106684655A (en) | 2017-01-16 | 2017-01-16 | Fabrication method of graphene convergence bar |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111342769A (en) * | 2018-12-18 | 2020-06-26 | 苏州阿特斯阳光电力科技有限公司 | Photovoltaic outgoing line, and preparation method and application thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101777429A (en) * | 2010-02-10 | 2010-07-14 | 中国科学院上海硅酸盐研究所 | Graphene-based dye-sensitized solar cell complex light anode and preparation method |
CN103077766A (en) * | 2013-02-06 | 2013-05-01 | 青岛中科昊泰新材料科技有限公司 | Graphene conducting film and application of graphene conducting film to electrochemical capacitor |
CN103508447A (en) * | 2012-06-26 | 2014-01-15 | 海洋王照明科技股份有限公司 | Preparation method of graphene |
CN104393057A (en) * | 2014-12-09 | 2015-03-04 | 无锡同春新能源科技有限公司 | Crystalline silicon solar cell using graphene bus lines and bus bars for improving power transmission capacity |
-
2017
- 2017-01-16 CN CN201710029101.5A patent/CN106684655A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101777429A (en) * | 2010-02-10 | 2010-07-14 | 中国科学院上海硅酸盐研究所 | Graphene-based dye-sensitized solar cell complex light anode and preparation method |
CN103508447A (en) * | 2012-06-26 | 2014-01-15 | 海洋王照明科技股份有限公司 | Preparation method of graphene |
CN103077766A (en) * | 2013-02-06 | 2013-05-01 | 青岛中科昊泰新材料科技有限公司 | Graphene conducting film and application of graphene conducting film to electrochemical capacitor |
CN104393057A (en) * | 2014-12-09 | 2015-03-04 | 无锡同春新能源科技有限公司 | Crystalline silicon solar cell using graphene bus lines and bus bars for improving power transmission capacity |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111342769A (en) * | 2018-12-18 | 2020-06-26 | 苏州阿特斯阳光电力科技有限公司 | Photovoltaic outgoing line, and preparation method and application thereof |
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